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Articles de revues sur le sujet "Thick Copper level":

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Li, Yi Nan, Z. L. Peng et J. C. Yan. « GTA Welding of Copper Thick Plates by Using ERCuTi Welding Materials ». Materials Science Forum 697-698 (septembre 2011) : 409–13. http://dx.doi.org/10.4028/www.scientific.net/msf.697-698.409.

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The new welding material – ERCuTi alloys filler metals were developed specially for gas tungsten arc welding (GTAW) of copper. The hot cracking in welding copper is inhibited completely as the addition of de-oxidant element Ti in copper welding material. The degree of addition of Ti (2-4wt%) is critical when the susceptibility of cracking is to be suppressed. If the level is allowed to exceed 4wt%, more low-melting point eutectics (β-TiCu4and TiCu2) will be formed in the welds, and cracking susceptibility will be increased again. Results of mechanical properties tests show that although adding Ti increases the hardness and strength of the weld compared to the base metal, the impact ductility and the plastic properties are not decreased significantly.
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Hosseini, Vahid A., Kristina Lindgren, Mattias Thuvander, Daniel Gonzalez, James Oliver et Leif Karlsson. « Nanoscale phase separations in as-fabricated thick super duplex stainless steels ». Journal of Materials Science 56, no 21 (19 avril 2021) : 12475–85. http://dx.doi.org/10.1007/s10853-021-06056-0.

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AbstractNanoscale phase separations, and effects of these, were studied for thick super duplex stainless steel products by atom probe tomography and mechanical testing. Although nanoscale phase separations typically occur during long-time service at intermediate temperatures (300–500° C, our results show that slowly cooled products start to develop Fe and Cr separation and/or precipitation of Cu-rich particles already during fabrication. Copper significantly slowed down the kinetics at the expense of Cu-rich particle precipitation, where the high-copper material subjected to hot isostatic pressing (HIP), with Δt500–400 of 160 s and the low-copper hot-rolled plate with Δt500–400 of 2 s had the same level of Fe and Cr separation. The phase separations resulted in lower toughness and higher hardness of the HIP material than for hot-rolled plate. Therefore, both local cooling rate dependent and alloy composition governed variations of phase separations can be expected in as-fabricated condition.
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Loquet, Yannick, Cedric Perrot, Pierre Bouillon et Blaise Iteprat. « Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology ». ECS Transactions 3, no 41 (21 décembre 2019) : 1–8. http://dx.doi.org/10.1149/1.2819476.

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Richard, Claire Therese, M. M. Frank, Pascal Besson, E. Serret, N. Hotellier, Alessio Beverina, L. Dumas, Lucile Broussous, F. Kovacs et Thierry Billon. « Barrier and Copper Seedlayer Wet Etching ». Solid State Phenomena 103-104 (avril 2005) : 361–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.103-104.361.

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This paper summarizes the process development of TiN barrier etching in presence of copper, for a thick copper level in BICMOS technology. In an industrial context, we have chosen to use a SC1 chemistry in a spin etch single wafer tool. The SC1 composition and therefore the pH level allows - the barrier to be etched with no metallic residues, ( if not clear this can be a source for shorts) - control of the selectivity between copper and TiN - control of lateral etching under copper lines, the possible source of open chains by W attack during TiN etch. The electrical results show a robust process according to current specifications, in terms of leakage and via resistance with a fresh chemistry approach. In fact, the recirculation of SC1 is not possible due to substantial concentration changes during processing, high evaporation rate of Ammonia and high decomposition rate of Peroxide in the presence of copper on surface wafer.
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Lee, Suhyun, Chien Wern et Sung Yi. « Novel Fabrication of Silver-Coated Copper Nanowires with Organic Compound Solution ». Materials 15, no 3 (1 février 2022) : 1135. http://dx.doi.org/10.3390/ma15031135.

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Copper nanowires and Cu-Ag nanowires have various potential applications, such as transparent conductive film, flexible electronics, and conductive filler. In this study, we developed a new green fabrication method for silver-coated copper nanowires using methylsulfonylmethane (DMSO2), which is an environmentally friendly chemical at the food-grade level, to replace toxic chemicals, including ammonia, in the silver coating process. Copper nanowires were synthesized under various reaction temperatures and concentrations of hydrazine (N2H4), ethylenediamine (EDA), sodium hydroxide (NaOH), and copper precursor. The reaction temperature higher than 70 °C caused the oxidation of copper products and evaporation of the sample solution. The optimal conditions to synthesize copper nanowires more than 18 µm in length and 25–45 nm in diameter were determined: 9 M of NaOH, 50 µL of EDA, 17 mM of CuCl2, 5.7 mM of N2H4, and 70 °C reaction temperature. Cu-Ag nanowires, which have about a 12 nm thick silver shell, were successfully fabricated at room temperature under 1 mM of silver nitrate (AgNO3) and 1 wt % of DMSO2. Synthesis conditions for copper and silver-coated copper nanowires have been optimized.
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Aoh, Jong Ning, Chih Wei Huang et Wei Ju Cheng. « Fabrication of Al6061-AMC by Adding Copper-Coated SiC Reinforcement by Friction Stir Processing (FSP) ». Materials Science Forum 783-786 (mai 2014) : 1721–28. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1721.

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Friction stir processing (FSP) has successfully evolved as a technique in fabricating surface composite. An alternative technique on fabrication of a SiC-reinforced Al6061 aluminum matrix composite (AMC) by stirring copper-coated SiC particles into matrix to form a reinforced zone was developed. Copper film was deposited onto the SiC particles by electroless plating and by photodeposition processes. The copper coating serves as an adhesion and diffusion layer to enhance the cohesion between the particles and the matrix. It is to expect that the strength of the AMC could be improved. The uniformity of particle distribution in the stir zone (SZ) was improved by adjusting the location of particle insert and by a double-pass stir. T5 post weld heat treatment (PWHT) was conducted to retrieve the hardness and the strength of the SZ to the strength level of the matrix. While the submicron-thick Cu-coating was partially separated from SiC particles after FSP, photodeposition Cu-coating less than 100 nm thick exhibited a better adhesion to the SiC particles. The EPMA analysis across the interface shows evidence of interdiffusion between copper and aluminum which implies an enhanced cohesion between the particles and matrix. After PWHT, while the SZ containing photodeposition Cu-coated SiC exhibited the highest hardness among different SZs, the SZ containing electroless Cu-coated SiC exhibited the highest strength. The possible mechanisms for the improvement of the hardness and strength were discussed. In summary, the purpose of fabricating a locally particulate-reinforced Al6061 AMC by stirring Cu-coated SiC particles into Al6061 matrix was achieved. Keywords:Friction stir processing (FSP), particulate reinforced AMC, electroless plating, photodeposition, copper-coated SiC particles
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Gorbatyuk, S. M., A. A. Gerasimova et N. N. Belkina. « Applying Thermal Coatings to Narrow Walls of the Continuous-Casting Molds ». Materials Science Forum 870 (septembre 2016) : 564–67. http://dx.doi.org/10.4028/www.scientific.net/msf.870.564.

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Studies on enhancing the service life of continuous casting moulds at their narrow walls of copper M1 before the last repair by means of a heat spraying wear-resistant layer of the chrome-nickel coating have been carried out. Preliminary, the coating`s structure, phase composition, skin hardness and microhardness of chromium-nickel coating were studied. It is established that to obtain the required cleanliness level of the wall surface by making use of their mechanical operation, it is necessary to conduct thickness of the chromium-nickel coating operations. 0.5 – 0.6 mm chrome-nickel thermal coating was applied to the surface of the wall of a thick-walled narrow pair crystallizer. The results indicate the high-quality coating acceptable for application to the working surface of narrow walls of thick-walled moulds.
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Mantatova, N. V., Chuluunbatyn Oyuuntsetseg et S. Ye Sanzhiyeva. « TRACE ELEMENT CONTENT IN BLOOD OF CATTLE WITH ALIMENTARY ANEMIA AND HYPOCUPROSIS, AND IN SOIL SAMPLES OF THE TÖV AIMAG OF MONGOLIAAND THE KYAKHTINSKY DISTRICT OF THE REPUBLIC OF BURYATIA ». Vestnik Altajskogo gosudarstvennogo agrarnogo universiteta, no 8 (2021) : 61–66. http://dx.doi.org/10.53083/1996-4277-2021-202-08-61-66.

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This paper discusses the results of laboratory tests of biochemical indices of blood serum (copper, iron, protein, albumin, urea, glucose, and alkaline reserve) of cattle of Mongolian and Kalmyk breeds with alimentary anemia and hypocuprosis; the paper also discusses the findings of the comparative study of trace element composition (copper, zinc, cobalt, nickel, molybdenum, strontium, iron, and man-ganese) of the soils of the Töv Aimag of Mongolia and the Kyakhtinsky District of the Republic of Buryatia. The disor-ders of mineral metabolism in animals of Mongolian and Kalmyk breeds with clinical signs of alimentary anemia and hypocuprosis was accompanied by the signs of hypocu-premia and hyposideremia, i.e., insufficient content of cop-per and iron in the blood. When studying the causes of trace element deficiency in cattle, the natural geographic features of the deficiency concern areas were considered. It has been found that the endemic foci are common in light-chestnut soils and thin chestnut soils around lakes and stock watering sites in Mongolia and the Kyakhtinsky District of the Republic of Buryatia. As compared to medi-um-thick chestnut soil, light chestnut soil of the Töv Aimag of Mongolia is poor in copper by 21.9%; cobalt -by 32.4%; strontium -by 11.7%; iron –by 19.7%; manganese -by 9.9%; richer in zinc by 32.9%; molybdenum -by 7.7%. The content level differences in the medium-thick chestnut soil as compared to light chestnut soil of the Kyakhtinsky Dis-trict of the Republic of Buryatia are as following: copper -more by 25.0%; cobalt -by 40.3%; nickel -by 11.8%; mo-lybdenum -by 38.7%; strontium -by 16.3%; iron -by 53.8%.
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Prem Kumar, T., V. Muthupriya, A. Antony Christian Rajaa, R. Sasirekab et R. Sumanc. « World Best Level Efficiency from An Engineered Novel SLG/Mo/p-Cu2ZnSn(Al)Se4/n-CdS/i-ZnO/Al:ZnO/Al Compound Semiconductor Hetero-Junction Thin Film Solar Cells ». Shanlax International Journal of Arts, Science and Humanities 9, S1-May (14 mai 2022) : 41–46. http://dx.doi.org/10.34293/sijash.v9is1-may.5942.

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Molybdenum (Mo) metal seed layer deposited on soda lime glass (SLG) substrate and then Mo thick metal layer deposited on Mo seed layer. Then the Copper zinc tin aluminum selenide p-Cu2ZnSn(Al)Se4 (CZTAS) thin film was fabricated on molybdenum (Mo) thin film layer. For making p-n junction a n-CdS thin films fabricated on p-CZTAS layer using chemical bath deposition method. The surface morphology of total device structure was investigated by Scanning electron microscopy (SEM). The observed world best level efficiency and its note worthy results are presented and discussed in this research work.
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Schmidt, Ralf, Jens Palm et Jan M. Knaup. « The Pivotal Role of Uniformity of Electrolytic Deposition Processes to Improve the Reliability of Advanced Packaging ». International Symposium on Microelectronics 2021, no 1 (1 octobre 2021) : 000142–48. http://dx.doi.org/10.4071/1085-8024-2021.1.000142.

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Abstract Heterogeneous integration is considered as the key technology to create large, complex System in Package (SiP) assemblies of separately manufactured, smaller components. Proper control of the uniformity of each process step constitutes one of the main challenges during integration of the different components into a higher-level assembly. In this context, processes that create thick layers by electrochemical deposition are especially susceptible to variations across the substrate. Such processes include copper pillar and bump as well as tin-silver applications. Insufficient coplanarity of electrolytic copper would result in significant reliability issues or evolution of stress in the package. Upcoming hybrid bump designs with features of different dimensions pose additional challenges to the electrolytic copper and tin-silver processes. Purposeful adjustment of differences between the heights of pillars of different diameters may be required after the copper process step in order to obtain the best uniformity for the complete stack with tin-silver on top. In addition to coplanarity, the electrolytic process should allow modification shape of the individual pillar or bump. In this context, a versatile copper electrodeposition process will be discussed that allows adjustment to a broad variety of uniformity parameters and combinations thereof. In combination with suitable tin-silver deposition processes, this process is expected to significantly improve the reliability of copper pillars and bumps for advanced packaging applications.

Thèses sur le sujet "Thick Copper level":

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Pastore, Carine. « Evaluation de back-end of line optimisés pour les inductances intégrées en technologies CMOS et BiCMOS avancées visant les applications radiofréquences ». Phd thesis, Grenoble 1, 2009. http://www.theses.fr/2009GRE10081.

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Intégrées aux niveaux des interconnexions en technologies CMOS et BiCMOS, les inductances doivent répondre aux critères de fortes performances électriques, faible surface et/ou forts courants. Mais le défi n'est pas simple à relever. En effet, l'évolution du Back-End Of Line (BEOL) des technologies CMOS avancées et l'utilisation d'un substrat silicium à pertes tendent à dégrader fortement leurs performances. Ainsi, le développement de BEOL optimisés pour les inductances intégrées apparaît comme indispensable si on veut pouvoir répondre aux spécifications des circuits RF visés. Le principal objectif de cette thèse est de fournir des choix technologiques pour l'optimisation des inductances intégrées sur silicium, visant les applications dans la bande de fréquences de 1 à 5 GHz. Tout d'abord, une stratégie de gestion des inserts métalliques à l'échelle de l'inductance a été évaluée, afin de satisfaire les règles de densité imposées dans les technologies avancées (jusqu'au nœud technologique 32 nm). La volonté actuelle d'intégrer le module dédié à l'amplificateur de puissance en technologie CMOS a soulevé récemment la problématique de la gestion de forts courants (jusqu'à 1 A à 125°C) qui ne peut être adressée avec un BEOL standard. Un BEOL innovant utilisant deux niveaux de cuivre épais a été étudié en technologie CMOS 65 nm. Ce même BEOL a été évalué en technologie SOI. Cette dernière commence à émerger pour l'intégration du module d'émission complet en technologie CMOS de part sa compatibilité avec des substrats silicium Hautement Résistifs. L'optimisation d'inductances utilisant ce module double cuivre épais a été menée en technologie CMOS HR SOI 130 nm
Integrated in BEOL metallizations of CMOS or BiCMOS technologies, inductors have to meet requirements in terms of high electrical performances, low area and/or high current capability. However, this challenge is tricky to address. Actually, BEOL evolution and silicon substrate losses in Advanced CMOS technologies greatly decrease inductors' performances. Thus, the evaluation of optimized BEOL dedicated to the integration of inductors is essential if we want to target RF applications' specifications. The main objective of this thesis is to provide optimized technological solutions for inductors integrated in silicon technologies, and targeting RF applications in the 1 - 5 GHz frequency range. A dummy fill strategy has been evaluated at the scale of the device (without impacting its electrical performances) in order to fulfil metal density required in advanced technologies (down to the 32 nm node). Then, we have focused our attention on the evaluation of an optimized BEOL using a Double Thick Copper module in a 65 nm CMOS bulk technology. Actually, the wish to integrate the module dedicated to the power amplifier in CMOS technology has raised high current issues (up to 1 A @ 125°C), which is impossible to target with a standard BEOL. In the same trend, this optimized BEOL has been evaluated in SOI technology. Actually, this technology is starting to come up for the complete integration of the RF Front End module in CMOS technology thanks to its compatibility with HR silicon substrates which enables to integrate even more functions (antennas, diplexer, balun). Thus, inductor's optimization using a Double Thick Copper module has been performed in a 130 nm HR SOI CMOS technology

Chapitres de livres sur le sujet "Thick Copper level":

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DeNapoli, Antoinette. « In Search of the Sadhu’s Stone : Metals and Gems as Theraputic Technologies of Transformation in Vernacular Aesceticism in North India ». Dans Soulless Matter, Seats of Energy : Metals, Gems and Minerals in South Asian Traditions, 143–73. Equinox Publishing, 2016. http://dx.doi.org/10.1558/equinox.29656.

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“In the middle of these mountains is our immortality,” said Shabari Bai, a female Hindu renouncer (sadhu) from a Bhil (tribal) community in North India. Located in Chirva village (Udaipur district), Rajasthan, Shabari Bai’s ashram is nestled in the Aravalli Mountains, one of the oldest mountain chains in South Asia. She continued, “The earth [bhumi] is the most precious life [jiv] on the planet. She is alive just as we are alive. She bears the pain of the world and has all the knowledge [jnan] that will heal our suffering and keep us from destroying ourselves.” Shabari Bai’s incisive statement calls attention to the earth and, more specifically, to landforms such as mountains, as the seat of energy, power, and salvific knowledge. More significantly, Shabari Bai suggests that mountains possess a form of consciousness (jiv) and, thus, represent a “precious” natural resource—or life—precisely because they contain invaluable substances such as metals, minerals, and gems that promote the health and healing of all life on the planet, including the planet itself. Like Shabari Bai, sadhus in the North Indian state of Rajasthan, in which I conducted extensive field research with Hindu sadhus from the Shaiva (Dashanami and Nath) and Vaishnava (Ramananda/Tyagi) renouncer traditions, associate naturally occurring substances like metals, minerals, and gems with power and immortality and use them in their everyday ritual/healing practices. In my experience, preferring naturopathic—or, in Indian terms, Ayurvedic—methods over allopathic methods, sadhus, men and women, commonly wear stones, gems, and metals on their bodies as an efficacious means to heal, cure, and prevent ailments from poor digestion to anaemia. To take an example, according to many of the sadhus I knew, wearing copper on the big toe aids digestion. In another context, following an almost fatal dog attack and only after allopathic methods failed, Kailash Das, a Ramanandi (Tyagi) sadhu, started to wear thick silver rings on each of her toes. “It keeps the veins open and causes the blood to move in my feet. Since I’ve been wearing these [rings], I suffer no pain in my feet at all.” Based on over a decade of ethnographic fieldwork in Rajasthan, this essay describes and analyzes sadhus’ knowledge and use of metals, minerals, and gems in order to shed light on a level of vernacular practice and experience that has been underrepresented in the scholarship on sannyas in South Asia. Special attention is paid to the sadhus’ gendered representations of metals, minerals, and gems and the ways that their practices shape and reconfigure the more standard definitional parameters for what sannyas is all about in contemporary India. The essay is divided into two parts. Part 1 analyzes what I have characterized as the sadhus’ “rhetoric of renunciation,” the stories (kahani) and songs (bhajan) that they perform about the earth, its properties, and humans’ responsibility to the planet. In addition, this section explores sadhus’ ideas about ecological sustainability in a consumer-based economy through means of their performances. Part 2 examines the sadhus’ use and classification of metals, minerals, and gems, the deities associated with these substances, the problems they are thought to cure and/or prevent, and the sadhus’ personal experiences of illness that catalyzed their knowledge and use of metals, minerals, and gems. In sum, this essay contributes new research to academic studies of sannyas in South Asia and shows that sadhus draw on indigenous knowledge about minerals, metals, and gems in their practices both to address and redress the deleterious effects that Rajasthan’s mining industry is wreaking on the earth in a rapidly changing, postindustrial India.
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Delponte, Ilaria, et Valentina Costa. « Metropolitan MaaS and DRT Schemes : Are They Paving the Way Towards a More Inclusive and Resilient Urban Environment ? » Dans Studies in Health Technology and Informatics. IOS Press, 2022. http://dx.doi.org/10.3233/shti220853.

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Mobility-as-a-Service and Demand-Responsive-Transport schemes are promoting progressively a user-centered approach, made of modularity, flexibility and tailor-made travel experience, and pandemic emergency has furthermore enhanced this new way of thinking, thus representing an unprecedented occasion to develop a new paradigm for a more sustainable and resilient transport system, thus ensuring a greater level of social and territorial inclusion beyond traditional urban borders and outdated distinctions of targeted services for particular users’ categories. This paper discusses the main features of MaaS and DRT schemes in order to assess if they could be able to cope with Universal Design principles and to improve metropolitan accessibility accordingly to the urgent request for social and territorial inclusion as sustainable development pre-requisites, made by different stakeholders in the international and European debate (see UNO SDGs or EU Cork Declaration 2.0), and re-launched by many national initiatives (SNAI for Italy, Espana Vacìa for Spain…). To re-think metropolitan mobility as a service that can be shaped accordingly to user’s needs and to redefine transport supply as a complex puzzle made by different and complementary services could represent a unique opportunity to overcome one of traditional public transport dramatic problems: low mobility demand, whether it be due to sparsely populated areas or connected with specific demands of targeted population categories. Hence this paper recalls some of the recent DRT experiences already active in Genova Metropolitan Area -the so-called DRINBUS above all- along with the on-demand mobility strategy for Ligurian internal areas in order to discuss how this new user-centered approach is acting on the marginalization of remote territories and fragile user categories. The choice to develop a MaaS scheme could re-shape metropolitan mobility as a comprehensive and global mosaic made by multiple pieces, thus making more resilient the entire system thanks to its modularity and redundancy. This allows to make more sustainable “niche” services as well, according to the systemic nature of this mobility platform, thus opposing the present unsuccessful approach of creating ad-hoc options, focusing indeed on the user’s request to travel from point A to point B, without the need to define him as urban resident, commuter, disabled or not, towards a greater social inclusion and territorial cohesion.
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« Some of these could also be operated in the energy range above lOMeV for experiments designed to determine at which energy level radioactivity can be induced in the irradiated medium. A linac with a maximum energy of 25 MeV was commissioned for the U.S. Army Natick Research and Development Labora­ tories in 1963. Its beam power was 6.5 kW at an electron energy of 10 MeV, 18 kW at 24 MeV. Assuming 100% efficiency, a 1-kW beam can irradiate 360 kg of product with a dose of 10 kGy/h. The efficiency of electron accelerators is higher than that of gamma sources because the electron beam can be directed at the product, whereas the gamma sources emit radiation in all directions. An efficiency of 50% is a realistic assumption for accelerator facilities. With that and 6.5 kW beam power an accelerator of the type built for the Natick laboratories can process about 1.2t/h at 10 kGy. In Odessa in the former Soviet Union, now in the Ukraine, two 20-kW accelerators with an energy of 1.4 MeV installed next to a grain elevator went into operation in 1983. Each accelerator has the capacity to irradiate 200 t of wheat per hour with a dose of 200 Gy for insect disinfestation. This corresponds to a beam utilization of 56% (9). In France, a facility for electron irradiation of frozen deboned chicken meat commenced operation at Berric near Vannes (Brittany) in late 1986. The purpose of irradiation is to improve the hygienic quality of the meat by destroying salmonella and other disease-causing (pathogenic) microorganisms. The electron beam accelerator is a 7 MeV/10 kW Cassitron built by CGR-MeV (10). An irradiation facility of this type is shown in Figure . Because of their relatively low depth of penetration electron beams cannot be used for the irradiation of animal carcasses, large packages, or other thick materials. However, this difficulty can be overcome by converting the electrons to x-rays. As indicated in Figure 9, this can be done by fitting a water-cooled metal plate to the scanner. Whereas in conventional x-ray tubes the conversion of electron energy to x-ray energy occurs only with an efficiency of about %, much higher efficiencies can be achieved in electron accelerators. The conversion efficiency depends on the material of the converter plate (target) and on the electron energy. Copper converts 5-MeV electrons with about 7% efficiency, 10-MeV electrons with 12% efficiency. A tungsten target can convert 5-MeV electrons with about 20%, 10-MeV electrons with 30% efficiency. (Exact values depend on target thickness.) In contrast to the distinct gamma radiation energy emitted from radionuclides and to the monoenergetic electrons produced by accelerators, the energy spectrum of x-rays is continuous from the value equivalent to the energy of the bombarding electrons to zero. The intensity of this spectrum peaks at about one-tenth of the maximum energy value. The exact location of the intensity peak depends on the thickness of the converter plate and on some other factors. As indicated in Figure ». Dans Safety of Irradiated Foods, 40. CRC Press, 1995. http://dx.doi.org/10.1201/9781482273168-31.

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Actes de conférences sur le sujet "Thick Copper level":

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Andrews, Richard E. « Canister Sealing for High Level Waste Encapsulation ». Dans ASME 2001 8th International Conference on Radioactive Waste Management and Environmental Remediation. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/icem2001-1319.

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Abstract Sweden has chosen to manage spent fuel rods by direct encapsulation and storage in a deep level repository. Two welding processes are being investigated for the sealing of copper vessels that form the outer barrier of the disposal canisters. TWI Ltd in the UK has developed Reduced Pressure Electron Beam Welding and Friction Stir Welding for 50mm thick copper. This paper describes some of the investigations and compares the techniques. Over the past 3 years a full-size canister welding machine has been designed and built. Specialised tools have been developed for the welding of thick sections in copper with very encouraging results.
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Verdy, C., G. Montavon et C. Coddet. « On the Behavior of Thick and Porous Copper Deposits Under Compressive Stress ». Dans ITSC 1998, sous la direction de Christian Coddet. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.itsc1998p0647.

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Abstract Pure copper thick deposits were vacuum plasma sprayed in such a way that several porosity levels were obtained. Mechanical compressive tests permitted to assess the mechanical behavior of these materials and to study the associated pore microstructural changes. A linear porosity level decrease was observed during the first stages of the compressive squeezing, until the stress reached a specific value corresponding to a transition between pore contraction and copper splats deformation. Stereological measurements showed that the pore squeezing was isotropic.
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Schober, Jakob, Johannes Berger, Constanze Eulenkamp, Karl Nicolaus et Gregor Feiertag. « Thick Film Photoresist Process for Copper Pillar Bumps on Surface Acoustic Wave - Wafer Level Packages ». Dans 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC). IEEE, 2020. http://dx.doi.org/10.1109/estc48849.2020.9229720.

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Nguyen, Dat, Bob Davis et Corey Lewis. « Copper Bond Over Active Circuit (BOAC) and Copper Over Anything (COA) Failure Analysis ». Dans ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0076.

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Abstract In today's electronic industry of shrinking circuit boards and shrinking semiconductor integrated circuits (IC), semiconductor companies have to be creative in providing devices with more circuitry on less silicon. Copper Bond over Active Circuit (BOAC)/Copper over Anything (COA) processes allow routing and bonding to thick top level metallization on the LinBiCMOS technology node. This paper discusses failure analysis (FA) techniques and approaches on un-passivated BOAC, and explains a generic BOAC/COA process. The approach to FA of BOAC involves package inspection-non intrusive analysis, decapsulation, die inspection, and defect identification/root cause analysis. Case studies are presented to explain the specific FA steps. Fault isolation involving BOAC requires the strategic removal of copper traces and selective analysis of the failed circuitry. Liquid crystal and micro-probing have been used effectively in failure isolation.
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Hlina, Jiri, Karel Hromadka, Jan Reboun, Martin Hirman et Ales Hamacek. « Adhesion improvement of Thick Printed Copper film on alumina substrates by controlling of oxygen level in furnace ». Dans 2016 39th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2016. http://dx.doi.org/10.1109/isse.2016.7563154.

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Kang, Tae Goo, et Young-Ho Cho. « Near-Field Electromagnetic Shielding Effect of On-Chip Electroplated Copper Layers ». Dans ASME 1999 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1999. http://dx.doi.org/10.1115/imece1999-0318.

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Abstract An experimental investigation on the near field electromagnetic loss of thin copper layers has been presented for applications to multi-chip microsystems with on-chip electromagnetic protection. Copper layers in the thickness range of 0.2 μm∼200μm have been electroplated on the silicon substrates. A pair of microwave transceivers has been fabricated using the 3.5mm × 3.5mm nickel microloop antennas, electroformed on the silicon substrates. Electromagnetic radiation loss has been measured for the copper layers placed between the microloop transceivers, resulting in the electromagnetic shield effectiveness of 10dB∼40dB for the wave frequency range of 100MHz ∼ 1GHz. The 0.2μm-thick copper layer provides a shield loss of 20dB at the frequencies higher than 300MHz, whereas showing a predominant decrease of shield loss to 10dB level at lower frequencies. No substantial increase of the shield effectiveness has been found for the copper shield layers thicker than 2μm.
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Motta, Lorenzo, Paolo Veneto, Mark Antolik et Donato Di Donato. « Focused Ion Beam Circuit Edit on Copper Redistribution Layer ». Dans ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0440.

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Abstract Focused ion beam (FIB) circuit edit (CE) is an integral part of IC debug, fault-isolation, and low yield analysis. Regarding FIB microsurgery, complexity is growing with the shrinking of dimensions of lower level metallization while the redistribution layer (RDL) structures can increase in all three dimensions. This requires continuous development of CE processes to address these opposite dimension trends and material variations. There are two venues to address CE, accessing from the front side (FS) or from the back side (BS) of an IC. This paper describes the FS techniques and methodologies developed to edit the RDL technology. The goal of this work is to demonstrate on a Cu GND/power plane the performance of the halogen-based contamination process. Results shows that the benefit of reduced time to remove thick Cu metallization is surely advantageous for CE throughput as well as for improving edit success rates.
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Kuo Frank, Kuei Hsiao, Ting-en Lin, Joey Lin, Yu Sheng Lin, Stan Chen et Feng Lung Chien. « The Comparative Study of High and Low Temperature Cure Polyimide For Wafer Level Package With Ultra-Thick Re-distribution Copper Layer ». Dans 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00158.

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Thadesar, Paragkumar A., et Muhannad S. Bakir. « Silicon Interposer Featuring Novel Electrical and Optical TSVs ». Dans ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-89742.

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Three-dimensional (3D) integrated circuits (ICs) yield system level performance improvements by providing high-bandwidth communication as well as opportunity for heterogeneous integration. It is envisioned that an area array of 3D stacked ICs can be interconnected using dense fine-pitch electrical and photonic interconnects on a silicon interposer. This paper presents a mechanically robust “thick” silicon interposer with novel electrical through-silicon vias (TSVs) and optical TSVs. The novel electrical TSVs described include polymer-clad TSVs and polymer-embedded vias. An advantage of using thick silicon interposer is that microchannels can be integrated in the thick silicon interposer to transfer a coolant to the 3D ICs with interlayer microfluidic heat sink or for the direct integration of a microfluidic heat-sink in the silicon interposer. However, as the thickness of silicon interposer increases, TSV electrical parasitics increase. Moreover, the coefficient of thermal expansion (CTE) mismatch between the copper TSV and silicon causes reliability issues. To reduce TSV capacitance as well as to reduce TSV stresses, polymer-clad electrical TSVs were fabricated. Using the same photodefinable polymer used for the cladding of electrical TSVs, optical TSVs were fabricated and characterized.
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Bostanci, Huseyin, et Nihal E. Joshua. « Nucleate Boiling of Dielectric Liquids on Hydrophobic and Hydrophilic Surfaces ». Dans ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-53604.

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An experimental study was conducted to investigate the effect of hydrophobic, hydrophilic and mixed hydrophobic/hydrophilic surfaces in nucleate boiling heat transfer. A dielectric liquid, HFE-7100, was used as the working fluid in the saturated boiling tests. A total of 12 test samples were used in this study, featuring four types of boiling surfaces with a common copper substrate; (1) plain, smooth copper surface (as reference), (2) hydrophobic patterned or fully-covered surface, (3) hydrophilic patterned or fully-covered surface, and (4) mixed hydrophobic/ hydrophilic patterned surface. All test samples were prepared on 10 mm × 10 mm × 2 mm copper substrates with matching size thick film resistors attached onto the opposite side, to generate heat and simulate high heat flux electronic devices. The fabrication of hydrophobic surfaces involved common photolithography techniques to apply 100 μm thick Teflon layer. Hydrophilic surfaces were prepared by depositing a TiO2 layer through a two-step process involving layer by layer self-assembly (L-B-L) and liquid phase deposition (L-P-D) techniques. Test samples with the mixed hydrophobic/hydrophilic surfaces were obtained by first applying Teflon hydrophobic patterns, and then by covering the remaining substrate area with hydrophilic coating. The effect of pattern and pitch size was investigated by varying the circular pattern dimensions between 40, 100 and 250 μm and corresponding pitch dimensions between 80, 200 and 500 μm. The results indicated that hydrophobic and hydrophilic surfaces have distinct benefits, and mixed hydrophobic/hydrophilic surfaces offer an optimum performance enhancement, providing: (a) early transition to boiling regime with no temperature overshoot at boiling incipience, (b) up to 10.6 kW/m2°C HTC (representing 82% increase), and (c) up to 28 W/cm2 CHF level (representing 47% increase). The studied enhanced surfaces therefore demonstrated a practical surface modification method for heat transfer enhancement in immersion cooling applications.

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