Littérature scientifique sur le sujet « Thick Copper level »
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Articles de revues sur le sujet "Thick Copper level":
Li, Yi Nan, Z. L. Peng et J. C. Yan. « GTA Welding of Copper Thick Plates by Using ERCuTi Welding Materials ». Materials Science Forum 697-698 (septembre 2011) : 409–13. http://dx.doi.org/10.4028/www.scientific.net/msf.697-698.409.
Hosseini, Vahid A., Kristina Lindgren, Mattias Thuvander, Daniel Gonzalez, James Oliver et Leif Karlsson. « Nanoscale phase separations in as-fabricated thick super duplex stainless steels ». Journal of Materials Science 56, no 21 (19 avril 2021) : 12475–85. http://dx.doi.org/10.1007/s10853-021-06056-0.
Loquet, Yannick, Cedric Perrot, Pierre Bouillon et Blaise Iteprat. « Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology ». ECS Transactions 3, no 41 (21 décembre 2019) : 1–8. http://dx.doi.org/10.1149/1.2819476.
Richard, Claire Therese, M. M. Frank, Pascal Besson, E. Serret, N. Hotellier, Alessio Beverina, L. Dumas, Lucile Broussous, F. Kovacs et Thierry Billon. « Barrier and Copper Seedlayer Wet Etching ». Solid State Phenomena 103-104 (avril 2005) : 361–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.103-104.361.
Lee, Suhyun, Chien Wern et Sung Yi. « Novel Fabrication of Silver-Coated Copper Nanowires with Organic Compound Solution ». Materials 15, no 3 (1 février 2022) : 1135. http://dx.doi.org/10.3390/ma15031135.
Aoh, Jong Ning, Chih Wei Huang et Wei Ju Cheng. « Fabrication of Al6061-AMC by Adding Copper-Coated SiC Reinforcement by Friction Stir Processing (FSP) ». Materials Science Forum 783-786 (mai 2014) : 1721–28. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1721.
Gorbatyuk, S. M., A. A. Gerasimova et N. N. Belkina. « Applying Thermal Coatings to Narrow Walls of the Continuous-Casting Molds ». Materials Science Forum 870 (septembre 2016) : 564–67. http://dx.doi.org/10.4028/www.scientific.net/msf.870.564.
Mantatova, N. V., Chuluunbatyn Oyuuntsetseg et S. Ye Sanzhiyeva. « TRACE ELEMENT CONTENT IN BLOOD OF CATTLE WITH ALIMENTARY ANEMIA AND HYPOCUPROSIS, AND IN SOIL SAMPLES OF THE TÖV AIMAG OF MONGOLIAAND THE KYAKHTINSKY DISTRICT OF THE REPUBLIC OF BURYATIA ». Vestnik Altajskogo gosudarstvennogo agrarnogo universiteta, no 8 (2021) : 61–66. http://dx.doi.org/10.53083/1996-4277-2021-202-08-61-66.
Prem Kumar, T., V. Muthupriya, A. Antony Christian Rajaa, R. Sasirekab et R. Sumanc. « World Best Level Efficiency from An Engineered Novel SLG/Mo/p-Cu2ZnSn(Al)Se4/n-CdS/i-ZnO/Al:ZnO/Al Compound Semiconductor Hetero-Junction Thin Film Solar Cells ». Shanlax International Journal of Arts, Science and Humanities 9, S1-May (14 mai 2022) : 41–46. http://dx.doi.org/10.34293/sijash.v9is1-may.5942.
Schmidt, Ralf, Jens Palm et Jan M. Knaup. « The Pivotal Role of Uniformity of Electrolytic Deposition Processes to Improve the Reliability of Advanced Packaging ». International Symposium on Microelectronics 2021, no 1 (1 octobre 2021) : 000142–48. http://dx.doi.org/10.4071/1085-8024-2021.1.000142.
Thèses sur le sujet "Thick Copper level":
Pastore, Carine. « Evaluation de back-end of line optimisés pour les inductances intégrées en technologies CMOS et BiCMOS avancées visant les applications radiofréquences ». Phd thesis, Grenoble 1, 2009. http://www.theses.fr/2009GRE10081.
Integrated in BEOL metallizations of CMOS or BiCMOS technologies, inductors have to meet requirements in terms of high electrical performances, low area and/or high current capability. However, this challenge is tricky to address. Actually, BEOL evolution and silicon substrate losses in Advanced CMOS technologies greatly decrease inductors' performances. Thus, the evaluation of optimized BEOL dedicated to the integration of inductors is essential if we want to target RF applications' specifications. The main objective of this thesis is to provide optimized technological solutions for inductors integrated in silicon technologies, and targeting RF applications in the 1 - 5 GHz frequency range. A dummy fill strategy has been evaluated at the scale of the device (without impacting its electrical performances) in order to fulfil metal density required in advanced technologies (down to the 32 nm node). Then, we have focused our attention on the evaluation of an optimized BEOL using a Double Thick Copper module in a 65 nm CMOS bulk technology. Actually, the wish to integrate the module dedicated to the power amplifier in CMOS technology has raised high current issues (up to 1 A @ 125°C), which is impossible to target with a standard BEOL. In the same trend, this optimized BEOL has been evaluated in SOI technology. Actually, this technology is starting to come up for the complete integration of the RF Front End module in CMOS technology thanks to its compatibility with HR silicon substrates which enables to integrate even more functions (antennas, diplexer, balun). Thus, inductor's optimization using a Double Thick Copper module has been performed in a 130 nm HR SOI CMOS technology
Chapitres de livres sur le sujet "Thick Copper level":
DeNapoli, Antoinette. « In Search of the Sadhu’s Stone : Metals and Gems as Theraputic Technologies of Transformation in Vernacular Aesceticism in North India ». Dans Soulless Matter, Seats of Energy : Metals, Gems and Minerals in South Asian Traditions, 143–73. Equinox Publishing, 2016. http://dx.doi.org/10.1558/equinox.29656.
Delponte, Ilaria, et Valentina Costa. « Metropolitan MaaS and DRT Schemes : Are They Paving the Way Towards a More Inclusive and Resilient Urban Environment ? » Dans Studies in Health Technology and Informatics. IOS Press, 2022. http://dx.doi.org/10.3233/shti220853.
« Some of these could also be operated in the energy range above lOMeV for experiments designed to determine at which energy level radioactivity can be induced in the irradiated medium. A linac with a maximum energy of 25 MeV was commissioned for the U.S. Army Natick Research and Development Labora tories in 1963. Its beam power was 6.5 kW at an electron energy of 10 MeV, 18 kW at 24 MeV. Assuming 100% efficiency, a 1-kW beam can irradiate 360 kg of product with a dose of 10 kGy/h. The efficiency of electron accelerators is higher than that of gamma sources because the electron beam can be directed at the product, whereas the gamma sources emit radiation in all directions. An efficiency of 50% is a realistic assumption for accelerator facilities. With that and 6.5 kW beam power an accelerator of the type built for the Natick laboratories can process about 1.2t/h at 10 kGy. In Odessa in the former Soviet Union, now in the Ukraine, two 20-kW accelerators with an energy of 1.4 MeV installed next to a grain elevator went into operation in 1983. Each accelerator has the capacity to irradiate 200 t of wheat per hour with a dose of 200 Gy for insect disinfestation. This corresponds to a beam utilization of 56% (9). In France, a facility for electron irradiation of frozen deboned chicken meat commenced operation at Berric near Vannes (Brittany) in late 1986. The purpose of irradiation is to improve the hygienic quality of the meat by destroying salmonella and other disease-causing (pathogenic) microorganisms. The electron beam accelerator is a 7 MeV/10 kW Cassitron built by CGR-MeV (10). An irradiation facility of this type is shown in Figure . Because of their relatively low depth of penetration electron beams cannot be used for the irradiation of animal carcasses, large packages, or other thick materials. However, this difficulty can be overcome by converting the electrons to x-rays. As indicated in Figure 9, this can be done by fitting a water-cooled metal plate to the scanner. Whereas in conventional x-ray tubes the conversion of electron energy to x-ray energy occurs only with an efficiency of about %, much higher efficiencies can be achieved in electron accelerators. The conversion efficiency depends on the material of the converter plate (target) and on the electron energy. Copper converts 5-MeV electrons with about 7% efficiency, 10-MeV electrons with 12% efficiency. A tungsten target can convert 5-MeV electrons with about 20%, 10-MeV electrons with 30% efficiency. (Exact values depend on target thickness.) In contrast to the distinct gamma radiation energy emitted from radionuclides and to the monoenergetic electrons produced by accelerators, the energy spectrum of x-rays is continuous from the value equivalent to the energy of the bombarding electrons to zero. The intensity of this spectrum peaks at about one-tenth of the maximum energy value. The exact location of the intensity peak depends on the thickness of the converter plate and on some other factors. As indicated in Figure ». Dans Safety of Irradiated Foods, 40. CRC Press, 1995. http://dx.doi.org/10.1201/9781482273168-31.
Actes de conférences sur le sujet "Thick Copper level":
Andrews, Richard E. « Canister Sealing for High Level Waste Encapsulation ». Dans ASME 2001 8th International Conference on Radioactive Waste Management and Environmental Remediation. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/icem2001-1319.
Verdy, C., G. Montavon et C. Coddet. « On the Behavior of Thick and Porous Copper Deposits Under Compressive Stress ». Dans ITSC 1998, sous la direction de Christian Coddet. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.itsc1998p0647.
Schober, Jakob, Johannes Berger, Constanze Eulenkamp, Karl Nicolaus et Gregor Feiertag. « Thick Film Photoresist Process for Copper Pillar Bumps on Surface Acoustic Wave - Wafer Level Packages ». Dans 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC). IEEE, 2020. http://dx.doi.org/10.1109/estc48849.2020.9229720.
Nguyen, Dat, Bob Davis et Corey Lewis. « Copper Bond Over Active Circuit (BOAC) and Copper Over Anything (COA) Failure Analysis ». Dans ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0076.
Hlina, Jiri, Karel Hromadka, Jan Reboun, Martin Hirman et Ales Hamacek. « Adhesion improvement of Thick Printed Copper film on alumina substrates by controlling of oxygen level in furnace ». Dans 2016 39th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2016. http://dx.doi.org/10.1109/isse.2016.7563154.
Kang, Tae Goo, et Young-Ho Cho. « Near-Field Electromagnetic Shielding Effect of On-Chip Electroplated Copper Layers ». Dans ASME 1999 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1999. http://dx.doi.org/10.1115/imece1999-0318.
Motta, Lorenzo, Paolo Veneto, Mark Antolik et Donato Di Donato. « Focused Ion Beam Circuit Edit on Copper Redistribution Layer ». Dans ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0440.
Kuo Frank, Kuei Hsiao, Ting-en Lin, Joey Lin, Yu Sheng Lin, Stan Chen et Feng Lung Chien. « The Comparative Study of High and Low Temperature Cure Polyimide For Wafer Level Package With Ultra-Thick Re-distribution Copper Layer ». Dans 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00158.
Thadesar, Paragkumar A., et Muhannad S. Bakir. « Silicon Interposer Featuring Novel Electrical and Optical TSVs ». Dans ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-89742.
Bostanci, Huseyin, et Nihal E. Joshua. « Nucleate Boiling of Dielectric Liquids on Hydrophobic and Hydrophilic Surfaces ». Dans ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-53604.