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Littérature scientifique sur le sujet « Zinc oxide films »

Auteur : Grafiati

Publié le 4 juin 2021

Mis à jour le 9 février 2022

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Articles de revues sur le sujet "Zinc oxide films"

Huang, Jin Hua, Rui Qin Tan, Jia Li, Yu Long Zhang, Ye Yang et Wei Jie Song. « Thermal Stability of Aluminum Doped Zinc Oxide Thin Films ». Materials Science Forum 685 (juin 2011) : 147–51. http://dx.doi.org/10.4028/www.scientific.net/msf.685.147.

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Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

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Li, Z. W., W. Gao et Roger J. Reeves. « Zinc oxide films by thermal oxidation of zinc thin films ». Surface and Coatings Technology 198, n^o 1-3 (août 2005) : 319–23. http://dx.doi.org/10.1016/j.surfcoat.2004.10.111.

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Verghese, P. M., et D. R. Clarke. « Surface textured zinc oxide films ». Journal of Materials Research 14, n^o 3 (mars 1999) : 1039–45. http://dx.doi.org/10.1557/jmr.1999.0138.

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Both epitaxial and crystallographically fiber-textured ZnO films can exhibit a surface texturing (“cratered”) morphology when grown by pulsed laser deposition at temperatures in the range of 350–750 °C in a background pressure of oxygen. The surface texturing is a consequence of the nucleation of oriented c axis grains that grow geometrically and impinge laterally. It is concluded that the surface texturing is due to nonequilibrium growth, being the result of a competition between the arriving flux, diffusive flux along the surface, and, possibly, concurrent ion etching from the laser-ablated plasma plume. At higher temperatures, no surface texturing occurs, presumably because of concurrent grain growth and more rapid surface smoothing by diffusion.

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Choi, Hak-Soon, Il-Kyo Jeong, Mun-Soo Shin, Heon-Oh Kim et Yong-Soo Kim. « Properties of Indium Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition ». Journal of the Korean Institute of Electrical and Electronic Material Engineers 24, n^o 7 (1 juillet 2011) : 537–42. http://dx.doi.org/10.4313/jkem.2011.24.7.537.

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Beedri, Niyamat, Yusuf Inamdar, Suhail Anjum Sayyed, Arif Shaikh, Sandesh Jadkar et Habib Pathan. « Growth of Zinc Oxide Porous Films via Electrochemical Anodization Using Glycerol Based Electrolyte ». Chemistry & ; Chemical Technology 8, n^o 3 (1 septembre 2014) : 283–86. http://dx.doi.org/10.23939/chcht08.03.283.

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Klochko, N. P. « Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications ». Semiconductor Physics Quantum Electronics and Optoelectronics 17, n^o 4 (10 novembre 2014) : 358–67. http://dx.doi.org/10.15407/spqeo17.04.358.

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WANG, YANG, CHENGBIAO WANG, ZHIJIAN PENG, QI WANG et XIULI FU. « MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING ». Surface Review and Letters 24, Supp01 (31 octobre 2017) : 1850006. http://dx.doi.org/10.1142/s0218625x18500063.

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Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.

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Michaelis, Esther, Kazuteru Nonomura, Derck Schlettwein, Tsukasa Yoshida, Hideki Minoura et Dieter Wöhrle. « Hybrid thin films of ZnO with porphyrins and phthalocyanines prepared by one-step electrodeposition ». Journal of Porphyrins and Phthalocyanines 08, n^o 12 (décembre 2004) : 1366–75. http://dx.doi.org/10.1142/s1088424604000726.

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Hybrid thin films of crystalline zinc oxide and the zinc complex of 5,10,15,20-tetrakis-(4-sulfonatophenyl)porphyrin (ZnTPPS) have been prepared by cathodic electrodeposition from different aqueous zinc salt solutions. Films from a solution containing zinc nitrate and the porphyrin derivate show a rough surface and porosity, whereas films prepared from an oxygen-saturated zinc chloride solution were very smooth. The presence of the porphyrin derivative in the deposition solution has a clear influence on the morphology of the hybrid films compared with pure zinc oxide films. In aqueous zinc nitrate solution the addition of the porphyrin derivative hinders the growth of zinc oxide. In contrast, the addition of the dye to the oxygen-saturated zinc chloride solution leads to an increase of the growth rate of ZnO /porphyrin hybrid films. An increased spectral absorbance was reached when two dyes (zinc complex of tetrasulfonated phthalocyanine and porphyrin) were added to the zinc nitrate solution since the electrodeposited hybrid thin films contained both dyes. UV-vis spectra revealed the presence of both macrocyclic metal complexes in the ZnO films.

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Xia, Zhi Lin, Qi Xu et Li Xin Zhao. « The Microstructure of Zinc Oxide Films Prepared by Hydrothermal Method ». Advanced Materials Research 306-307 (août 2011) : 1238–41. http://dx.doi.org/10.4028/www.scientific.net/amr.306-307.1238.

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In the solutions which are prepared by mixing zinc nitrate hexahydrate, strong ammonia and methenamine in water bath at 90 Centigrade, lamellate and granular zinc oxide films have grown on different substrates such as B270 glass, glass based PAA films, pure aluminum foil and aluminum based PAA films. Films microstructures were characterized by scanning electron microscope (SEM). The influences of substrate and pH on the films microstructure were analyzed. Results reflect that: Ammonia plays an important role in the growing competition of grainy crystal; the more concentration of ammonia, the more zinc oxide crystals grow into granular. Because of the high specific area and adsorption capacity, lacunaris zinc oxide films have great application perspective in gas sensor, catalyzed sorption and biochemistry.

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Sohn, Hong Yong, et Arun Murali. « Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films ». Molecules 26, n^o 5 (7 mars 2021) : 1456. http://dx.doi.org/10.3390/molecules26051456.

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This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

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Thèses sur le sujet "Zinc oxide films"

Yang, Zheng. « Doping in zinc oxide thin films ». Diss., [Riverside, Calif.] : University of California, Riverside, 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3359913.

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Thesis (Ph. D.)--University of California, Riverside, 2009.
Includes abstract. Available via ProQuest Digital Dissertations. Title from first page of PDF file (viewed March 12, 2010). Includes bibliographical references. Also issued in print.

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Illy, Benoit. « Electrodeposition of zinc oxide nanostructured films ». Thesis, Imperial College London, 2009. http://hdl.handle.net/10044/1/5506.

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ZnO nanostructures have great promise in a wide range of applications such as sensors, optoelectronics, piezoelectronics, healthcare. Preparation of oxide films by electrodeposition from aqueous solution presents several advantages over other techniques such as controlling the rate and morphology through several well-defined parameters (electrode potential, current, temperature, pH, etc.), the fact that electrolytic processing is a well-established technology and readily scalable for production, and the non-equilibrium nature of the electrochemical interface often gives rise to morphologies and compositions not attainable through other, usually high-temperature, routes. Despite a large amount of research in this area the detailed mechanism of nucleation and growth is still controversial. Only a good understanding of it will allow the expected industrial applications to be achieved. One of the main difficulties to overcome is that tiny amounts of material are involved and the required in-situ measurements are thus very delicate. The ability of synchrotron radiation to probe material structure during deposition makes it the ideal tool for the study of nucleation and growth of these materials as a function of the processing parameters. Here we will present two synchrotron-based approaches involving both X-ray absorption and scattering. The first method, together with ex-situ characterisation, provides detailed information about how the kinetics of the growth and/or dissolution is influenced by the electrochemical parameters. The effect of time, potential, zinc ions concentration, oxygen precursor, temperature and electrolyte composition have been studied. Following this understanding of the influence of the parameters, films of desired structure can be synthesised and new structures have been made. Beside the electrochemical parameters, the growth of the film is influenced by the interaction with substrate in the early stage of nucleation. The second synchrotron technique allows the direct observation of the development of the crystal orientation of the films during the deposition. It gives promising results to study how the substrate influences the growth and thus the properties of the films.

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Oleti, Kalki Rajan Madhavi. « Characterization of P-type zinc oxide films ». [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000448.

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Depaz, Michael. « Processing and characterization of zinc oxide thin films ». [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0002235.

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Brett, Michael Julian. « Stoichiometry control mechanisms of bias sputtered zinc oxide films ». Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/25579.

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This thesis reports the first detailed study of the stoichiometry control mechanisms and physical properties of ZnO films deposited by dc planar magnetron sputtering of a Zn target in a reactive Ar/0₂ atmosphere. Control of film stoichiometry was achieved using a subsidiary rf discharge at the substrate and a reactive gas baffle surrounding the target. The reactive gas baffle was shown to enhance film oxidation by decreasing the metal flux to the substrate and increasing the oxygen partial pressure near the substrate. Rutherford backscattering analysis of film stoichiometry demonstrated that the effect of the rf discharge was to increase the O/Zn composition ratio. This oxidation was shown to occur through preferential resputtering and preferential evaporation of excess Zn and by activation and ion plating of oxygen species. Resputtering and evaporation rates were found to be enhanced above that expected for bulk Zn, due to the weak bonding of surface adatoms during film growth. Conducting ZnO films produced at various values of the rf-induced substrate bias voltage were characterized for electrical, optical and structural properties using Hall probe,. X-ray diffraction, electron microscope, and visible and infrared spectroscopy techniques. Films deposited at low substrate bias (0 to -50V) were found to have a large Zn excess (15%) resulting in low electron mobilities (1 cm²/Vs), high resistivities (10⁻² Ωcm) and were strongly absorbing in the visible. Films deposited at high substrate bias were nearly stoichiometric, optically transparent and had high electron mobilities (15 cm²/Vs) resulting in low resistivity (10⁻³ Ωcm). The optical properties of transparent conducting films for wavelengths 0.4 to 20 /im were modelled by the Drude theory of free electrons using measured electrical transport properties. The original goal of this work, to develop a heat mirror coating suitable for manufacture, was achieved by bias sputter deposition of ZnO onto uncooled polyester sheet at deposition rates approaching 75 nm/min. The best heat mirror films had a transmission to solar energy of 75% and an 85% reflection of 300 K blackbody radiation.
Science, Faculty of
Physics and Astronomy, Department of
Graduate

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Miller, Paul. « Zinc Oxide : A spectroscopic investigation of bulk crystals and thin films ». Thesis, University of Canterbury. Physics and Astronomy, 2008. http://hdl.handle.net/10092/3618.

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The optical properties of zinc oxide crystals and thin films prepared by different methods are investigated. Single crystal zinc oxide samples prepared by melt and hydrothermal growth techniques were obtained. The influence of polarity and growth method on the optical properties were studied and correlated with their electronic properties. Thin films prepared by molecular beam epitaxy (MBE) and sputtering were studied and the influence of growth conditions and post growth treatment on the optical properties of the films was investigated. The photo-luminescence (PL) of bulk zinc oxide was examined at high resolution. Line widths of less than 0.1 meV were observed. More than a dozen different transitions in the near band edge region (NBE 360-380 nm) were noted, several of which displayed a separation of <0.5 meV which goes some way to illustrating the complexity of the system. Attempts were made, with some success, to reconcile the two main competing identification systems of the NBE transitions and explanations for some of the discrepancies are provided. The controversial deep level transitions in the visible part of the spectrum are fit with 3 Gaussians and their identities discussed with relation to the available literature. The presence of copper impurities was detected in annealed films and a model to explain their behaviour under annealing conditions is hypothesised. Films grown by MBE here at the University of Canterbury are shown to have PL line widths of as little as 2.2 meV, the ratio of active oxygen species in the growth chamber during deposition is shown to effect the optical quality of the films. It is shown that annealing can improve the optical quality of the films and various other methods of influencing the films properties are discussed. Reactive, magnetron, direct current sputtering is shown to be the optimal method of growth for maximising both optical and piezo-electric properties. Optimum annealing temperatures were found at 900 and 1100 ℃ with a local minimum at 1000 ℃. X-ray diffraction, atomic force and scanning electron microscopy measurements in addition to optical PL measurements show the influence of annealing on the polycrystalline sputtered ZnO films. Films grown on glass, silicon, sapphire and quartz were shown to display similar behaviour under annealing conditions. It was found that zinc oxide based devices were liable to be chemically unstable at temperatures above 1100 ℃. The piezo electric properties of the films were examined and attempts were made to prepare a zinc oxide film optimised for both optical quality and piezoelectric properties for possible future applications of a hybrid opto-mechanical coupled devices.

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Yang, Hung-Pao 1980. « A study of P-type zinc oxide thin films / ». Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=99550.

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In the past decade, p-type ZnO material has been investigated extensively. Its properties offer the potential for broad applications including the development of ultraviolet light emitting devices. Although n-type ZnO material is well known and studied for decades, the fabrication method and properties of p-type ZnO material are still to date not clearly understood.
In this report, reproducible p-type ZnO thin films sputtered on glass substrates are reported. On the same substrate, p-type ZnO film is local and surrounded by n-type ZnO regions. The thickness of the films is typically three microns after several hours of deposition by radio-frequency magnetron sputtering technique. Both p-type ZnO and n-type thin films are characterized by optical and electrical measurements at room temperature.
The crystal structure of p-type ZnO is examined by X-ray diffraction patterns. The X-ray diffraction patterns show that the material is polycrystalline and has (100) and (101) preferred orientation. Photoluminescence spectra of ZnO help to identify the energy levels in the material and spectra analysis reveals the presence of defects and dopants in the material. For p-type ZnO, the resistivity, the hole concentration and hole mobility are found to be 148.8 O-cm, 4.34 x 1018/cm3 and 1.72 x 10-2 cm2/V-sec respectively.

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Potter, D. « Zinc-based thin films for transparent conducting oxide applications ». Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10041886/.

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This thesis describes the synthesis of zinc-based transparent conducting oxide (TCO) thin films, as sustainable alternatives to commercial TCOs. There are two main aims to this work. The first is the discovery of suitable TCO materials, which involves finding the optimum optoelectronic properties for applications in photovoltaic devices. The second aim is investigating the scale up of aerosol assisted chemical vapour deposition (AACVD), which is the technique used to deposit the majority of the films in this work. The films deposited in this work were characterised by X-ray diffraction (XRD) to find the crystal structures, X-ray photoelectron spectroscopy (XPS) to find the elemental compositions, scanning electron microscopy (SEM) to analyse the surface morphologies, UV/vis spectroscopy to find the optical properties, and by Hall effect measurements to find the electrical properties. Aluminium, gallium, indium, silicon, and fluorine have been examined as dopants for ZnO, in various combinations, and at different concentrations. The films were generally found to have high transparency, and electrical properties that approached those of industrial TCO materials. The merits of the films are particularly promising, when considering the relative ease through which the films were synthesised. Additionally, the effect of varying the solvent used to make up the precursor solution is investigated. The deposition of ZnSb2O6 thin films via spin coating is also discussed. This thesis also details an investigation into the scale-up of AACVD. An aerosol transport study was performed, whereby the aerosol was transported prior to deposition. It was found that a considerable amount of aerosol was condensing within the tubing, prior to reaching the reactor. Additionally, increasing the film growth rates was investigated by depositing FTO films using high concentrations in the precursor solution. Growth rates of approximately 2 μm min-1 were achieved, making the use of AACVD for commercial applications significantly more feasible.

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Min, Yongki 1965. « Properties and sensor performance of zinc oxide thin films ». Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/17032.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
Includes bibliographical references (p. 144-152).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and sensor performance of ZnO films were investigated. Using AFM, SEM, XRD and WDS, the 02/Ar ratios during sputtering and Al dopant were found to control the property of ZnO films. Subsequent annealing at 700 C improved the sensor response of the films considerably although it had only minor effects on the microstructure. DC resistance, I-V curves and AC impedance were utilized to investigate the gas response of ZnO sensors. ZnO films prepared with high O2/Ar ratios showed better sensitivity to various gases, a feature believed to be related to their lower carrier density. Al doped ZnO showed measurable sensitivity even with lower resistance attributable to their porous microstructure. AC impedance identified two major components of the total resistance including Schottky barriers at the Pt-ZnO interfaces and a DC bias induced constriction resistance within the ZnO films. Time dependent drift in resistance of ZnO films has been observed. Without applied bias, the ZnO films showed a fast and a slow resistance change response when exposed to gases with varying oxygen partial pressure with both response components dependent on operating temperature. Even at the relatively low operating temperatures of these thin film sensors, bulk diffusion cannot be discounted. The oxygen partial pressure dependence of the sensor resistance and its corresponding activation energy were related to defect process controlling the reduction/oxidation behavior of the ZnO.
(cont.) In this study, time dependent DC bias effects on resistance drift were first discovered and characterized. The DC bias creates particularly high electric fields in these micro devices given that the spacing of the interdigited electrodes falls in the range of microns. The high electric field is believed to initiate ion migration and/or modulate grain boundary barrier heights, inducing resistance drift with time. Such DC bias resistance induced drift is expected to contribute to the instability of thin film micro array sensors designed for practical applications. Suggestions for stabilizing sensor response are provided.
by Yongki Min.
Ph.D.

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Choppali, Uma. « Low Temperature Polymeric Precursor Derived Zinc Oxide Thin Films ». Thesis, University of North Texas, 2006. https://digital.library.unt.edu/ark:/67531/metadc5504/.

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Zinc oxide (ZnO) is a versatile environmentally benign II-VI direct wide band gap semiconductor with several technologically plausible applications such as transparent conducting oxide in flat panel and flexible displays. Hence, ZnO thin films have to be processed below the glass transition temperatures of polymeric substrates used in flexible displays. ZnO thin films were synthesized via aqueous polymeric precursor process by different metallic salt routes using ethylene glycol, glycerol, citric acid, and ethylene diamine tetraacetic acid (EDTA) as chelating agents. ZnO thin films, derived from ethylene glycol based polymeric precursor, exhibit flower-like morphology whereas thin films derived of other precursors illustrate crack free nanocrystalline films. ZnO thin films on sapphire substrates show an increase in preferential orientation along the (002) plane with increase in annealing temperature. The polymeric precursors have also been used in fabricating maskless patterned ZnO thin films in a single step using the commercial Maskless Mesoscale Materials Deposition system.

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Livres sur le sujet "Zinc oxide films"

M, Durbin Steven, Wenckstern Holger von, Allen Martin W et Materials Research Society, dir. Zinc oxide and related materials--2009 : Symposium held November 30-December 3, 2009, Boston, Massachusetts, USA. Warrendale, Pa : Materials Research Society, 2010.

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Ziaja, Jan. Cienkowarstwowe struktury metaliczne i tlenkowe : Właściwości, technologia, zastosowanie w elektrotechnice = Thin layer metallic and oxide structures : properties, technology, electrotechnics applications. Wrocław : Oficyna Wydawnicza Politechniki Wrocławskiej, 2012.

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Martino, M. ZnO nanostructures deposited by laser ablation. Hauppauge, N.Y : Nova Science Publishers, 2010.

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Martino, M. ZnO nanostructures deposited by laser ablation. Hauppauge, N.Y : Nova Science Publishers, 2010.

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Hüpkes, Jürgen. Untersuchung des reaktiven Sputterprozesses zur Herstellung von aluminiumdotierten Zinkoxide-Schichten für Silizium-Dünnschicht-solarzellen. Jülich : Forschungszentrum Jülich, Zentralbibliothek, 2006.

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ZnO bao mo zhi bei ji qi guang, dian xing neng yan jiu. Shanghai Shi : Shanghai da xue chu ban she, 2010.

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Durbin, Steven M., Martin W. Allen et Holger von Wenckstern. Zinc Oxide and Related Materials - 2009. University of Cambridge ESOL Examinations, 2014.

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Zinc Oxide Bulk, Thin Films and Nanostructures. Elsevier, 2006. http://dx.doi.org/10.1016/b978-0-08-044722-3.x5000-3.

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(Editor), Chennupati Jagadish, et Stephen J. Pearton (Editor), dir. Zinc Oxide Bulk, Thin Films and Nanostructures : Processing, Properties, and Applications. Elsevier Science, 2006.

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Zinc Oxide Bulk, Thin Films and Nanostructures : Processing, Properties, and Applications. Elsevier Science, 2006.

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Chapitres de livres sur le sujet "Zinc oxide films"

Szyszka, B. « Magnetron Sputtering of ZnO Films ». Dans Transparent Conductive Zinc Oxide, 187–233. Berlin, Heidelberg : Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_5.

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Klein, A., et F. Säuberlich. « Surfaces and Interfaces of Sputter-Deposited ZnO Films ». Dans Transparent Conductive Zinc Oxide, 125–85. Berlin, Heidelberg : Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_4.

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Lorenz, M. « Pulsed Laser Deposition of ZnO-Based Thin Films ». Dans Transparent Conductive Zinc Oxide, 303–57. Berlin, Heidelberg : Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_7.

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Mamat, Mohamad Hafiz, et Mohamad Rusop. « Zinc Oxide Nanostructured Thin Films : Preparation and Characterization ». Dans Advanced Structured Materials, 355–73. Berlin, Heidelberg : Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/8611_2010_23.

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Kasar, Chetan, Ulhas Sonawane, Prasantha Mudimela, Jean-Francois Colomer et D. S. Patil. « Single Crystalline Films of Zinc Oxide for Nanorod Applications ». Dans Physics of Semiconductor Devices, 775–77. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_199.

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Mar, G. L., P. Y. Timbrell et R. N. Lamb. « Formation of Zinc Oxide Thin Films by the Thermal Decomposition of Zinc Acetate ». Dans Springer Proceedings in Physics, 177–92. Berlin, Heidelberg : Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84933-6_15.

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Yahiro, Junko, et Hiroaki Imai. « Morphological Design of Zinc Oxide Films Grown in Aqueous Solutions ». Dans Electroceramics in Japan IX, 155–58. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-411-1.155.

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Boussard, P., P. E. M. Siegbahn et U. Wahlgren. « Cluster Models of Zinc Oxide Including Ionic and Covalent Effects ». Dans Adsorption on Ordered Surfaces of Ionic Solids and Thin Films, 192–205. Berlin, Heidelberg : Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78632-7_18.

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Kushwaha, Ajay, et M. Aslam. « Zinc Oxide Nanowire Films : Solution Growth, Defect States and Electrical Conductivity ». Dans Advanced Materials for Agriculture, Food, and Environmental Safety, 453–91. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118773857.ch16.

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Nandi, S. K. « Studies of Optical Properties of RF Magnetron Sputtered Deposited Zinc Oxide Films ». Dans Advances in Intelligent Systems and Computing, 3–7. Cham : Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-74808-5_1.

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Actes de conférences sur le sujet "Zinc oxide films"

Mamat, M. H., Z. Khusaimi et M. Rusop. « Photoluminescence properties of zinc oxide nanostructures grown on zinc oxide thin films seeded catalyst ». Dans 2010 International Conference on Electronic Devices, Systems and Applications (ICEDSA). IEEE, 2010. http://dx.doi.org/10.1109/icedsa.2010.5503035.

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Chetna, Shani Kumar, A. Garg, A. Chowdhuri, V. Dhingra, S. Chaudhary et A. Kapoor. « Zinc oxide doped graphene oxide films for gas sensing applications ». Dans INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015) : Proceeding of International Conference on Condensed Matter and Applied Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4946630.

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Ghimpu, L., O. Lupan, S. Popescu, V. Ursaki, I. Tiginyanu, L. Chow, G. Chai, S. Park et A. Schulte. « Nanofibrous zinc oxide films synthesized by magnetron sputtering ». Dans 2011 International Semiconductor Conference (CAS 2011). IEEE, 2011. http://dx.doi.org/10.1109/smicnd.2011.6095776.

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Salah, Mohamed, Samir Azizi, Abdelwaheb Boukhachem, Chokri Khaldi et Jilani Lamloumi. « Doped zinc oxide thin films for photodetectors devices ». Dans 2017 International Conference on Information and Digital Technologies (IDT). IEEE, 2017. http://dx.doi.org/10.1109/dt.2017.8012135.

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Salah, Mohamed, Samir Azizi, Abdelwaheb Boukhachem, Chokri Khaldi et Jilani Lamloumi. « Doped zinc oxide thin films for photodetectors devices ». Dans 2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT). IEEE, 2016. http://dx.doi.org/10.1109/setit.2016.7939901.

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Valentini, Antonio, Fabio Quaranta et Lorenzo Vasanelli. « Dielectric Zinc Oxide Films Characterization For Optical Waveguide ». Dans 1989 Intl Congress on Optical Science and Engineering, sous la direction de Theo T. Tschudi. SPIE, 1990. http://dx.doi.org/10.1117/12.961352.

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Trinca, L. M., A. C. Galca, V. Stancu, C. Chirila et L. Pintilie. « Structural characterization of impurified zinc oxide thin films ». Dans ELECTROCERAMICS XIV CONFERENCE. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4901669.

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Polla, D. L., et R. S. Muller. « ZINC-OXIDE THIN FILMS FOR INTERGRATED-SENSOR APPLICATIONS ». Dans 1986 Solid-State, Actuators, and Microsystems Workshop. San Diego, CA USA : Transducer Research Foundation, Inc., 1986. http://dx.doi.org/10.31438/trf.hh1986.38.

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Zhang, Jiesheng, Koji Iwamaru et Kazuhiro Nakamura. « Synthesis of high-transmittance zinc oxide by oxidation of evaporated zinc films ». Dans 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2013. http://dx.doi.org/10.1109/imfedk.2013.6602255.

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Li Chen et Li Min. « Preparation and Property Analysis of Hydrophobic Zinc Oxide Films ». Dans 2011 International Conference on Measuring Technology and Mechatronics Automation (ICMTMA). IEEE, 2011. http://dx.doi.org/10.1109/icmtma.2011.510.

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Rapports d'organisations sur le sujet "Zinc oxide films"

Li, Sonny Xiao-zhe. Nitrogen doped zinc oxide thin film. Office of Scientific and Technical Information (OSTI), janvier 2003. http://dx.doi.org/10.2172/821916.

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