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Bibliografie tematiche / Epitaxy. Thin films. Silicon crystals

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Letteratura scientifica selezionata sul tema "Epitaxy. Thin films. Silicon crystals"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 10 febbraio 2022

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Articoli di riviste sul tema "Epitaxy. Thin films. Silicon crystals"

1

Bai, G. R., H. L. M. Chang, C. M. Foster, Z. Shen e D. J. Lam. "The relationship between the MOCVD parameters and the crystallinity, epitaxy, and domain structure of PbTiO3 films". Journal of Materials Research 9, n. 1 (gennaio 1994): 156–63. http://dx.doi.org/10.1557/jmr.1994.0156.

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Lead- and titanium-based oxide thin films were prepared by the metal-organic chemical vapor deposition technique (MOCVD) and the relationship between the film structures and the processing parameters, such as the ratio of Pb/Ti precursors in the gas phase, substrate materials, substrate surface orientation, and growth temperature, was systematically studied. It was found that whether a single-phase stoichiometric PbTiO3 film could be obtained depended on both the Pb/Ti precursor ratio in the gas phase and the deposition temperature. Under appropriate conditions, stoichiometric PbTiO3, films could be obtained on all the substrates including silicon, MgO, α-Al2O3, SrTiO3, and LaAlO3. The PbTiO3 films grown on silicon substrates were always polycrystalline, whereas epitaxial PbTiO3 films were obtainable on all the other substrates. For epitaxial PbTiO3 films, the epitaxial relationship, crystallinity, and domain structures were found to be a function of both the substrate materials and surface orientation as well as the deposition temperature. X-ray rocking curves (ω scan) of the (100) and (001) planes of PbTiO3 epitaxial film and PbTiO3 single crystal revealed the inherent nature of the domain structures in PbTiO3.

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Berti, M., G. Mazzi, L. Calcagnile, A. V. Drigo, P. G. Merli e A. Migliori. "Composition and structure of Si–Ge layers produced by ion implantation and laser melting". Journal of Materials Research 6, n. 10 (ottobre 1991): 2120–26. http://dx.doi.org/10.1557/jmr.1991.2120.

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Si samples (001) oriented have been implanted with 101774Ge/cm2 (17.7 at. % maximum Ge concentration) and then pulse annealed with either ruby or excimer (XeCl) lasers in the energy density range from 0.1 to 1.5 J/cm2. Compositional and structural characterization has been performed showing that for both laser wavelengths the final product of the annealing process is a single crystal characterized by a surface layer about 150 nm thick whose composition is Si0.9Ge0.1. While after ruby laser irradiations defects are present even in the fully recrystallized samples, after XeCl irradiations good strained layers in epitaxy to the underlying silicon crystals and free from misfit dislocations are produced. Structural characterization of the regrown films indicates that the governing factor for the recovery of the crystalline quality and for the “building up of strain” is the state of the implantation “end-of-range defect” layer. When this defected layer is not melted, textured columnar grains are formed. Upon melting of the end-of-range defect layer, a single crystal epitaxial layer under compressive strain is formed.

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3

Kim, Hyun Jung, Yeonjoon Park, Hyung Bin Bae e Sang H. Choi. "High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets". Advances in Condensed Matter Physics 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/785415.

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High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016per cm3doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe onc-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the[111]direction of cubic SiGe on top of the[0001]direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe onc-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3doping concentration.

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La Via, F., G. Litrico, R. Anzalone, A. Severino, M. Salanitri e S. Coffa. "High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy". MRS Advances 1, n. 54 (2016): 3643–47. http://dx.doi.org/10.1557/adv.2016.338.

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Abstract 3C-SiC devices are hampered by a high crystal defect density due to the hetero-epitaxial growth of these films, which results in the presence of stacking faults (SF). In this paper high growth rate CVD processes have been used to try to reduce the SF density in 3C-SiC films. In a first step a high growth rate (30 μm/h) has been used to grow 50 μm thick 3C-SiC layer on (100) Si. Then the silicon substrate was removed via etching and a further 3C-SiC growth was performed with a higher growth rate (90 μm/h) at a higher temperature (1600 °C) to obtain a final thickness of 150 μm. The SF presence and density were evaluated by TEM analysis performed on as-grown samples and SEM analysis on KOH etched samples with various thicknesses. A decrease of SF density was observed with an increase of 3C-SiC film thickness, with the best results (500/cm) obtained for the thickest sample. The 3C-SiC film quality and orientation was evaluated by XRD are correlated with film thickness and SF density.

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Chen, Qianwang, Yitai Qian, Zuyao Chen, Wenbin Wu, Zhiwen Chen, Guien Zhou e Yuheng Zhang. "Hydrothermal epitaxy of highly oriented TiO2 thin films on silicon". Applied Physics Letters 66, n. 13 (27 marzo 1995): 1608–10. http://dx.doi.org/10.1063/1.113867.

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Yu, Z., J. Ramdani, J. A. Curless, J. M. Finder, C. D. Overgaard, R. Droopad, K. W. Eisenbeiser et al. "Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, n. 3 (2000): 1653. http://dx.doi.org/10.1116/1.591445.

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Giussani, Alessandro, Karthick Perumal, Michael Hanke, Peter Rodenbach, Henning Riechert e Raffaella Calarco. "On the epitaxy of germanium telluride thin films on silicon substrates". physica status solidi (b) 249, n. 10 (13 settembre 2012): 1939–44. http://dx.doi.org/10.1002/pssb.201200367.

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Veuillen, J. ‐Y, C. d’Anterroches e T. A. Nguyen Tan. "Growth of silicon thin films on erbium silicide by solid phase epitaxy". Journal of Applied Physics 75, n. 1 (gennaio 1994): 223–26. http://dx.doi.org/10.1063/1.355887.

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Vlaskina, S. I., S. P. Kruchinin, E. Ya Kuznetsova, V. E. Rodionov, G. N. Mishinova e G. S. Svechnikov. "Nanostructures in silicon carbide crystals and films". International Journal of Modern Physics B 30, n. 13 (19 maggio 2016): 1642019. http://dx.doi.org/10.1142/s0217979216420194.

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Phase transformations of SiC crystals with grown original defects and thin films have been presented. The SiC crystals were grown by the Tairov method and the films were obtained by the “sandwich” and Chemical Vapor Deposition (CVD) methods.The analysis of absorption spectra, excitation spectra and low-temperature photoluminescence spectra testifies to the formation of a new microphase during the growth. The complex spectrum can be decomposed into similar structure-constituting spectra shifted on the energy scale relative to the former. Such spectra are indicators of the formation of new nanophases.The joint consideration of photoluminescence spectra, excitement photoluminescence spectra and absorption spectra testifies to the uniformity of different spectra and the autonomy of each of them. Structurally, the total complexity spectra correlate with the degree of disorder (imperfection) of the crystal and are related to the peculiarities of a defective performance such as a one-dimensional disorder. Three different types of spectra have three different principles of construction and behavior.

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Pezoldt, Jörg, Rolf Grieseler, Thorsten Schupp, Donat J. As e Peter Schaaf. "Mechanical Properties of Cubic SiC, GaN and AlN Thin Films". Materials Science Forum 717-720 (maggio 2012): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.513.

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Cubic polytypes of SiC, GaN and AlN were grown on silicon by molecular beam epitaxy. The mechanical properties of the epitaxial layers were investigated by nanoindentation. For 3C-SiC grown on Si(111) and Si(100) a dependence of the mechanical properties on the surface preparation with germanium prior to the carbonization was obtained.

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Tesi sul tema "Epitaxy. Thin films. Silicon crystals"

1

Grasby, Timothy John. "Growth techniques and characterisation of Siâ†1â†-â†xGeâ†x heterostructures for pMOS applications". Thesis, University of Warwick, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365234.

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Agan, Sedat. "Thermoelectric properties of Si-based two dimensional structures". Thesis, University of Warwick, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340085.

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Mokhtari, Hossein. "Transmission electron microscopy of defects and internal fields in GaN structures". Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368206.

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Champory, Romain. "Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEC057/document.

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Les cellules photovoltaïques en couches minces de silicium cristallin sont des candidates prometteuses pour les développements futurs de l’industrie photovoltaïque, au travers des réductions de coûts attendues et des applications dans les modules souples. Pour devenir compétitive, la filière des couches minces de silicium monocristallin doit se différencier des filières classiques. Elle est donc généralement basée sur l’épitaxie de couches de haute qualité puis sur le transfert de ces couches vers un support mécanique pour terminer la fabrication de la cellule et réutiliser le premier substrat de croissance. Le but de cette thèse est de trouver les associations technologiques qui permettent de réaliser des cellules photovoltaïques en couches minces et ultra-minces de silicium monocristallin à haut-rendement. Les travaux présentés s’articulent selon deux axes principaux : le développement et la maîtrise de procédés technologiques pour la fabrication de cellules solaires en couches minces et l’optimisation des architectures de cellules minces haut-rendement.Dans ce cadre de travail, les développements des techniques de fabrication ont d’abord concerné la mise au point de procédés de transfert de couches minces : une technologie basse température de soudage laser et un soudage par recuit rapide haute température. Afin d’augmenter le rendement de conversion, nous avons développé des structurations de surface utilisant les concepts de la nano-photonique pour améliorer le pouvoir absorbant des couches minces. Avec une lithographie interférentielle à 266 nm et des gravures sèches par RIE et humides par TMAH (Tetramethylammonium Hydroxide), nous pouvons réaliser des cristaux photoniques performants sur des couches épitaxiées de silicium. Finalement, nous avons pu concevoir des architectures optimisées de cellules solaires minces à homo-jonction de silicium et à hétéro-jonction silicium amorphe / silicium cristallin plus performantes électriquement, grâce aux outils de simulation électro-optique. Notre approche théorique nous a aussi conduits à expliciter les phénomènes électriques propres aux couches minces, et à démontrer tout le potentiel des cellules photovoltaïques minces en silicium monocristallin
Thin-film crystalline silicon solar cells are promising candidates for future developments in the photovoltaic industry, through expected costs reductions and applications in flexible modules. To be competitive, thin-film monocrystalline silicon solar cell technology must differentiate itself from conventional ones. It is generally based on the epitaxy of high-quality layers and then on the transfer of these layers onto a mechanical support to complete the manufacture of the cell and reuse the growth substrate. The aim of this thesis is to find the technological associations that make it possible to realize high-efficiency photovoltaic cells from thin and ultra-thin layers of monocrystalline silicon. The work presented focuses on two main axes: the development and control of technological processes for the fabrication of thin-film solar cells and the optimization of high-performance thin-cell architectures.In this framework, the development of manufacturing techniques began with the development of thin-film transfer processes: low temperature laser welding technology and high temperature fast annealing welding technology. In order to increase conversion efficiency, we have developed surface patterns using the nano-photonics concepts to improve the absorbency of thin films. With an interferential lithography at 266 nm and dry etching by RIE and wet etching by TMAH (Tetramethylammonium Hydroxide), we can produce high-performance photonic crystals on epitaxial layers of silicon. Finally, we were able to design optimized architectures of thin solar cells with homo-junction of silicon and hetero-junction amorphous silicon / crystalline silicon more efficient electrically, thanks to electro-optical simulation tools. Our theoretical approach has also led us to explain the electrical phenomena specific to thin films, and to demonstrate the full potential of thin photovoltaic cells made of monocrystalline silicon

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Filonenko, Olga. "Structural Investigations of Thin Chromium Disilicide Films on Silicon". Doctoral thesis, Universitätsbibliothek Chemnitz, 2005. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200500426.

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In der vorliegenden Arbeit wurden Röntgentechniken benutzt um die Struktur von dünnen (etwa 40 nm) CrSi2-Schichten, die unter UHV-Bedingungen mittels reaktive Koabscheidung und template-Verfahren auf Si(001) hergestellt wurden, zu charakterisieren. Die Ergebnisse wurden mit TEM-, SEM- und RBS-Untersuchungen korreliert und ergänzt. Die XRD-Analysen zeigen, dass die beiden Abscheideverfahren immer zur Bildung der CrSi2-Phase führen, wobei die Kristallite mit einer bevorzugten Orientierungsbeziehung CrSi2(001)[100] || Si(001)[110] wachsen. Im ersten Teil der Arbeit wurde die Cr-Si-Koabscheidung benutzt um die Prozessparameter zu bestimmen, die zum Wachstum epitaktischer Schichten führen können. Die Strukturuntersuchungen zeigen, dass nur bei einer Substrattemperatur von 700°C nahezu geschlossene Schichten mit Kristalliten, welche lateral eine Größe bis zu 300 nm haben und neben der bevorzugten noch andere Orientierungen zum Substrat aufweisen, entstehen. Als zweite Herstellungsmethode wurde das template-Verfahren verwendet, wo die Cr-Si-Koabscheidung auf ein vorher in-situ präpariertes ultradünnes CrSi2-template erfolgt. Die Morphologie und die Stärke der bevorzugten Orientierung der CrSi2-Schichten sind stark von der template-Dicke abhängig. Die Abscheidung auf CrSi2-templates, welche aus einer Cr-Schicht mit nominaler Dicker von 0,35 nm bis 0,52 nm entstehen, führt zum Wachstum weitgehend geschlossener, homogener und epitaktischer CrSi2-Schichten. Ein Modell, das den Einfluss der template-Dicke auf die Qualität der CrSi2-Schichten erklären kann, wird vorgeschlagen.

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Ziemer, Katherine S. "Studies of the initial stage of silicon carbide growth on silicon". Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=1815.

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Thesis (Ph. D.)--West Virginia University, 2001.
Title from document title page. Document formatted into pages; contains xvi, 217, 2 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references (p. 198-207).

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Fu, Engang. "Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers". Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B3637488X.

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Fu, Engang, e 付恩剛. "Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B3637488X.

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Schmidt, Diedrich A. "Titanium dioxide thin films : understanding nanoscale oxide heteroepitaxy for silicon-based applications /". Thesis, Connect to this title online; UW restricted, 2005. http://hdl.handle.net/1773/9756.

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Shapiro, Arye. "Growth, structure, and electronic properties of molybdenum/silicon thin films by Molecular beam epitaxy (MBE)". Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184846.

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Mo-Si thin films have proven applications in semiconductor devices and x-ray optics. Since their performance in these applications is extremely sensitive to interface roughness, it is important to understand the nucleation and growth mechanisms which affect the microscopic interface structure. Investigations of the initial stages of interface formation in the Mo-Si system were carried out by depositing fractional-monolayer Mo films onto Si(100)-(2x1) and Si(111)-(7x7) surfaces using Molecular Beam Epitaxy (MBE) with feedbackcontrolled electron-beam evaporation, and by characterizing these ultra-thin Mo films using in situ Reflection High-Energy Electron Diffraction (RHEED), LowEnergy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), and xray Photoelectron Spectroscopy (XPS). Continuous growth of multiple Mo coverages on a single Si wafer was accomplished with a technique developed for these experiments, involving a moveable substrate shutter. The coverages were corrected for the deposition profile (due to growth chamber geometry) with ex situ Rutherford Backscattering Spectroscopy (RBS) data and computer modelling. The growth mode was determined using Auger intensity measurements. In order to correct for the time dependence of the Auger intensities due to trace surface contamination and instrumental drift, a technique was developed which used Auger measurements on bulk Si and Mo to further normalize the intensity data for the fractional-monolayer coverages of Mo. The AES results in this dissertation show that for relatively slow Mo deposition (i.e. rates of approximately 0.05 Angstroms per second) onto either (100) or (111) Si substrates maintained at low temperatures (i.e. 100 °C), the first atomic monolayer of Mo is deposited in a non-layer-by-layer fashion, implying interdiffusion and/or agglomeration of the Mo overlayer. The LEED and RHEED results on similar samples show that the Mo layer is non-crystalline, i.e. there is no long-range periodicity. In addition, the deposition of Mo destroys the periodicity of the underlying Si atoms. For these deposition conditions, both the growth mode and the lack of crystallinity are independent of Si surface crystal structure.

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Libri sul tema "Epitaxy. Thin films. Silicon crystals"

1

Mahan, John E. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip : final report. [Washington, DC: National Aeronautics and Space Administration, 1990.

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Meeting, Materials Research Society, a cura di. Amorphous and polycrystalline thin-film silicon science and technology - 2011: Symposium held April 25-29, 2011, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2012.

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1957-, Nathan Arokia, a cura di. Amorphous and polycrystalline thin-film silicon science and technology--2008: Symposium held March 25-28, 2008, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2008.

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Meeting, Materials Research Society, e Symposium A, "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (2009 : San Francisco, Calif.)., a cura di. Amorphous and polycrystalline thin-film silicon science and technology--2009: Symposium held April 14-17, 2009, San Francisco, California, U.S.A. / editors, A. Flewitt ... [et al.]. Warrendale, Pa: Materials Research Society, 2009.

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Meeting, Materials Research Society, e Symposium A, "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology" (2010 : San Francisco, Calif.)., a cura di. Amorphous and polycrystalline thin-film silicon science and technology--2010: Symposium held April 5-9, 2009, San Francisco, California / editors, Qi Wang ... [et al.]. Warrendale, Pa: Materials Research Society, 2010.

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Kasper, Erich, e International Symposium on Silicon Molecular Beam Epitaxy 1989 strasb. Silicon Molecular Beam Epitaxy Reproduced from Thin Solid Films: Proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium ... Strasbourg, France, 30 (Vols 183 & 184). Elsevier Science Ltd, 1990.

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Wagner, Sigurd, Isamu Shimizu, Howard M. Branz, Ruud Schropp e Michael Hack. Amorphous and Microcrystalline Silicon Technology - 1998. University of Cambridge ESOL Examinations, 2014.

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Collins, Robert W., Hiroaki Okamoto, Howard M. Branz, Martin Stutzmann e Subhendu Guha. Amorphous and Heterogeneous Silicon Thin Films - 2000. University of Cambridge ESOL Examinations, 2014.

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Brendel, Rolf. Thin-Film Crystalline Silicon Solar Cells: Physics and Technology. Wiley & Sons, Limited, John, 2005.

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Thin-Film Crystalline Silicon Solar Cells: Physics and Technology. Wiley-VCH, 2003.

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Capitoli di libri sul tema "Epitaxy. Thin films. Silicon crystals"

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Bessolov, V. N., S. G. Konnikov, S. A. Kukushkin, M. V. Lebedev, E. B. Novikov, K. Yu Pogrebitskii e B. V. Tsarenkov. "Relaxational Liquid Epitaxy with Reverse Mass Transport and Its Potential for Preparing Thin Films of A3B5 Semiconductors". In Growth of Crystals, 85–93. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2379-6_8.

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Cao, Yu, Oleg Laboutin, Wayne Johnson, Satyaki Ganguly, Grace (Huili) Xing e Debdeep Jena. "Epitaxy of GaN on Silicon". In Thin Films on Silicon, 79–109. WORLD SCIENTIFIC, 2016. http://dx.doi.org/10.1142/9789814740487_0003.

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Hartmann, J. M. "Si, SiGe, and Si1 −yCy on Si: Epitaxy of Group-IV Semiconductors for Nanoelectronics". In Thin Films on Silicon, 3–46. WORLD SCIENTIFIC, 2016. http://dx.doi.org/10.1142/9789814740487_0001.

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McGinn, J. T., D. M. Hoffman, J. H. Thomas e F. J. Tams. "Induced Pd2Si epitaxy on (100) silicon by the predeposition of monolayer thin reactive metal films". In Microscopy of Semiconducting Materials, 1987, 535–40. CRC Press, 2020. http://dx.doi.org/10.1201/9781003069621-86.

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Bulatov, Vasily, e Wei Cai. "Kinetic Monte Carlo Method". In Computer Simulations of Dislocations. Oxford University Press, 2006. http://dx.doi.org/10.1093/oso/9780198526148.003.0014.

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The PN model discussed in the preceding chapter is a continuum approach that requires some atomistic input to account for non-linear interactions in the dislocation core. In this chapter, we introduce yet another continuum model that uses atomistic input for a different purpose. The kinetic Monte Carlo (kMC) model does not consider any details of the core structure but instead focuses on dislocation motion on length and time scales far greater than those of the atomistic simulations. The model is especially effective for diamond-cubic semiconductors and other materials in which dislocation motion is too slow to be observed on the time scale of molecular dynamics simulations. The key idea of the kMC approach is to treat dislocation motion as a stochastic sequence of discrete rare events whose mechanisms and rates are computed within the framework of the transition state theory. Built around its unit mechanisms, the kMC model simulates dislocation motion and predicts dislocation velocity as a function of stress and temperature. This data then can be used to construct accurate mobility functions for dislocation dynamics simulations on still larger scales (Chapter 10). In this sense, kMC serves as a link between atomistic models and coarse-grained continuum models of dislocations. The kMC approach is most useful in situations where the system evolves through a stochastic sequence of events with only a few possible event types. The method has been used in a wide variety of applications other than dislocations. For example, the growth of solid thin films from vapor or in solution is known to proceed through attachment and diffusion of adatoms deposited on the surface. Based on a finite set of unit mechanisms of the motion of adatoms, kMC models accurately describe the kinetics of growth and the resulting morphology evolution of the epitaxial films [95, 96, 97]. Similar kMC models have been applied to dislocation motion in crystals with high lattice resistance, such as silicon. In these materials, dislocations consist of long straight segments interspersed with atomic-sized kinks, depicted schematically in Fig. 9.1(a) as short vertical segments. As was explained in Section 1.3, dislocation motion proceeds through nucleation and migration of kink pairs and can be described well by a kMC model.

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Atti di convegni sul tema "Epitaxy. Thin films. Silicon crystals"

1

Macodiyo, Dan O., Hitoshi Soyama e Kazuo Hayashi. "Characterization of Defects for Effective Gettering in Silicon Wafer and Polysilicon Thin Films". In ASME 8th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2006. http://dx.doi.org/10.1115/esda2006-95340.

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The scaling down of commercial products has fueled the rapid development of micro- and nano-electromechanical systems (MEMS/NEMS). The enabling technologies of surface micromachining for silicon has made it compatible with industry strategies towards integrated circuits used in actuation and controls of systems. During the silicon processing, microdefects do occur. If properly controlled, they act as gettering sites for metallic species and hence remove unwanted impurities in the active device regions of semiconductor devices. On the other hand, microdefects can be responsible for plastic deformation of silicon wafer. The occurrence of dislocations in the active device regions causes current leakage and even failure of devices. Determination of the optimum point at which bulk microdefects can be considered to have beneficial gettering effect in silicon wafer and the exact mechanisms by which mobile dislocations are generated in the bulk of an initially dislocation free silicon wafer are not well understood. The purpose of this study is to analyze types of dislocation misfits and the corresponding defect size that is responsible for effective gettering due to cavitation impacts. The authors have already studied electrical characteristics of backside damage gettering by cavitation impact [1–3]. Polysilicon has been grown on thin silicon suboxide layer by a gas-source molecular beam epitaxy (MBE). MBE was done by placing the silicon substrate in an ultra-high vacuum chamber and heating it to 800 °C for 10 min and then at 700 °C for 3 hours at a flow rate of 2.5 sccm. The atomic force microscopy (AFM), micro Raman spectroscopy and transmission electron microscopy (TEM) were used to characterize the Czochralski silicon (CZ–Si) in the plane (100) and poly-Si/SiO2 in the atomic scale before and after gettering the specimen. AFM results showed that the surface roughness and threshold deformation were 2.3 nm and 4.4 nm, respectively. Plan-view TEM analysis of silicon showed the coexistence of single dislocation and narrow dipoles. It can be concluded that cavitation impacts causes dislocation dipoles on CZ-Si(100) which are associated with dislocation loops. The initiation point takes the form of a micro Frank-Read dislocation source, less than 50 nm, that cause dislocation dipoles which are associated with dislocation loops. Plan view TEM observations reveal that the size of the dislocation misfits was approximately 100 nm. The polysilicon surface had a higher residual stresses when it was subjected to cavitation impacts. The cross-sectional TEM observation on poly-Si revealed random crystals on the noncavitated specimens while a mixer of columnar-textured grains on the specimen treated by cavitation. The textured grains have rough edges and the intra-grain size is about 40 nm. Deformation twins and set of streaks from an array of dislocations were observed in the cavitated poly-Si/SiO2 specimens. The spacing between the large grains was 8 nm.

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2

Kacyuba, Aleksey, Anatoly Dvurechenskii, Gennady Kamaev, Vladimir Volodin e Viktor Kirienko. "RADIATION-INDUCED GROWTH EPITAXIAL CASI2 FILM". In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1587.silicon-2020/161-163.

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In this work investigated crystal structure of films formed by molecular beam epitaxy (MBE) of CaSi2 on Si (111), under electron irradiation by the method of Raman light scattering (RS), it was found that a CaSi2 film is formed at the interface between the silicon substrate and the epitaxially growing CaF2 film under the influence of an electron beam.

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3

Pi, Xiaodong, Zachary Holman e Uwe Kortshagen. "Silicon and Germanium Nanocrystal Inks for Low-Cost Solar Cells". In ASME 2010 4th International Conference on Energy Sustainability. ASMEDC, 2010. http://dx.doi.org/10.1115/es2010-90445.

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Abstract (sommario):

Silicon is the most widely used material in the microelectronics and photovoltaics industry. Currently it is used in one of two forms: as wafers of single- or polycrystalline material or as CVD deposited thin film material. While crystalline silicon solar cells achieve high efficiencies, the silicon wafer contributes significantly to the module cost. Thin film silicon solar cells can be produced at much lower cost, but they also feature lower efficiencies. In this presentation, we discuss an alternate route to forming silicon (Si) or germanium (Ge) thin films from solution on flexible substrates. Silicon (germanium) nanocrystals are formed in a nonthermal plasma. In the plasma environment a Si/Ge precursor is broken down by electron impact, leading to the nucleation and growth of Si or Ge crystals. By adding dopant precursors, p- and n-doped as well as intrinsic crystals can be formed. Organic ligands can be attached in the plasma such that nanocrystals become soluble in organic solvents. These “nanocrystal inks” can be used to form Si or Ge films with ultra-low-cost printing or coating techniques. Film properties of Si/Ge-ink processed films will be discussed. Proof-of-concept demonstrations of solar cells produced from silicon inks will be presented.

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