Letteratura scientifica selezionata sul tema "Hafnium oxide layers"
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Articoli di riviste sul tema "Hafnium oxide layers"
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Neuber, Markus, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky e Konrad Seidel. "Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD". Crystals 12, n. 8 (9 agosto 2022): 1115. http://dx.doi.org/10.3390/cryst12081115.
Testo completoAbstract (sommario):
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concentration range, Si:HfO2 layers based on thermal atomic layer deposition often exhibited a crossflow pattern across 300 mm wafer. Here, plasma enhanced atomic layer deposition is explored as an alternative method for producing Si-doped HfO2 layers, and their ferroelectric and pyroelectric properties are compared.
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Borowicz, P., A. Taube, W. Rzodkiewicz, M. Latek e S. Gierałtowska. "Raman Spectra of High-κDielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide". Scientific World Journal 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/208081.
Testo completoAbstract (sommario):
Three samples with dielectric layers from high-κdielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κdielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded foras-depositedhafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide.
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Lederer, Maximilian, Tobias Vogel, Thomas Kämpfe, Nico Kaiser, Eszter Piros, Ricardo Olivo, Tarek Ali et al. "Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia". Journal of Applied Physics 132, n. 6 (14 agosto 2022): 064102. http://dx.doi.org/10.1063/5.0098953.
Testo completoAbstract (sommario):
The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory.
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Kappa, Mathias, Markus Ratzke e Jürgen Reif. "Pulsed Laser Deposition of Hafnium Oxide on Silicon". Solid State Phenomena 108-109 (dicembre 2005): 723–28. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.723.
Testo completoAbstract (sommario):
Hafnium oxide films were prepared by Pulsed Laser Deposition (PLD). The influence of laser wavelength (fundamental, second and third harmonic of a Nd:YAG laser), used for evaporation, and substrate temperature on the film morphology, chemical structure and interfacial quality were investigated yielding the following results: While the laser wavelength exhibits minor influence on layer structure, the substrate temperature plays a critical role regarding morphological and chemical structure of the produced hafnium oxide / silicon stacks. Atomic Force Microscopy (AFM) images show a clear transition from smooth layers consisting of small area crystallites to very rough surfaces characterized by large craters and regular, plane features when the growth temperature was increased. These facts suggest a chemical instability which is confirmed by X-ray Photoelectron Spectroscopy (XPS). Investigations of the hafnium and silicon core level spectra indicate the occurrence of silicon dioxide and hafnium silicide in the case the samples were produced at elevated temperatures.
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Lederer, Maximilian, Konstantin Mertens, Ricardo Olivo, Kati Kühnel, David Lehninger, Tarek Ali, Thomas Kämpfe, Konrad Seidel e Lukas M. Eng. "Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide". Journal of Materials Research 36, n. 21 (2 novembre 2021): 4370–78. http://dx.doi.org/10.1557/s43578-021-00415-y.
Testo completoAbstract (sommario):
Abstract Non-volatile memories based on ferroelectric hafnium oxide, especially the ferroelectric field-effect transistor (FeFET), have outstanding properties, e.g. for the application in neuromorphic circuits. However, material development has focused so far mainly on metal–ferroelectric–metal (MFM) capacitors, while FeFETs are based on metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Here, the influence of the interface properties, annealing temperature and Si-doping content are investigated. Antiferroelectric-like behavior is strongly suppressed with a thicker interface layer and high annealing temperature. In addition, high-k interface dielectrics allow for thicker interface layers without retention penalty. Moreover, the process window for ferroelectric behavior is much larger in MFIS capacitors compared to MFM-based films. This does not only highlight the substrate dependence of ferroelectric hafnium oxide films, but also gives evidence that the phase diagram of ferroelectric hafnium oxide is defined by the mechanical stress. Graphic Abstract
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Kahro, Tauno, Kristina Raudonen, Joonas Merisalu, Aivar Tarre, Peeter Ritslaid, Aarne Kasikov, Taivo Jõgiaas et al. "Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media". Nanomaterials 13, n. 8 (9 aprile 2023): 1323. http://dx.doi.org/10.3390/nano13081323.
Testo completoAbstract (sommario):
SiO2 films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO2 films. On the top of the graphene layer, either continuous HfO2 or SiO2 films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively. Micro-Raman spectroscopy confirmed the integrity of the graphene after the deposition processes of both the HfO2 and SiO2. Stacked nanostructures with graphene layers intermediating the SiO2 and either the SiO2 or HfO2 insulator layers were devised as the resistive switching media between the top Ti and bottom TiN electrodes. The behavior of the devices was studied comparatively with and without graphene interlayers. The switching processes were attained in the devices supplied with graphene interlayers, whereas in the media consisting of the SiO2-HfO2 double layers only, the switching effect was not observed. In addition, the endurance characteristics were improved after the insertion of graphene between the wide band gap dielectric layers. Pre-annealing the Si/TiN/SiO2 substrates before transferring the graphene further improved the performance.
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Pan, Yaru, Xihui Liang, Zhihao Liang, Rihui Yao, Honglong Ning, Jinyao Zhong, Nanhong Chen, Tian Qiu, Xiaoqin Wei e Junbiao Peng. "Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films". Membranes 12, n. 7 (22 giugno 2022): 641. http://dx.doi.org/10.3390/membranes12070641.
Testo completoAbstract (sommario):
Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration. Generally speaking, the films prepared with a single metal oxide dielectric often achieve a breakthrough in one aspect of performance, but dielectric layers are required to be improved to get better performance in leakage current, capacitance density, and transmittance simultaneously in modern electronic devices. Therefore, we optimized the performance of the dielectric layers by using multiple metal oxides. We combined zirconia, yttria, magnesium oxide, alumina, and hafnium oxide with the solution method to find the best combination of these five metal oxides. The physical properties of the multi-component films were measured by atomic force microscopy (AFM), ultraviolet-visible spectrophotometer, and other instruments. The results show that the films prepared by multi-component metal oxides have good transmittance and low roughness. The thicknesses of all films in our experiment are less than 100 nm. Then, metal–insulator–metal (MIM) devices were fabricated. In addition, we characterized the electrical properties of MIM devices. We find that multi-component oxide films can achieve good performances in several aspects. The aluminum-magnesium-yttrium-zirconium-oxide (AMYZOx) group of 0.6 M has the lowest leakage current density, which is 5.03 × 10−8 A/cm2 @ 1.0 MV/cm. The hafnium-magnesium-yttrium-zirconium-oxide (HMYZOx) group of 0.8 M has a maximum capacitance density of 208 nF/cm2. The films with a small thickness and a high capacitance density are very conducive to high integration. Therefore, we believe that multi-component films have potential in the process of dielectric layers and great application prospects in highly integrated electronic devices.
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Ihlefeld, Jon F., Samantha T. Jaszewski e Shelby S. Fields. "A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance". Applied Physics Letters 121, n. 24 (12 dicembre 2022): 240502. http://dx.doi.org/10.1063/5.0129546.
Testo completoAbstract (sommario):
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic applications owing to their superior thickness scaling of ferroelectric stability and compatibility with mainstream semiconductors and fabrication processes. For broad-scale impact, long-term performance and reliability of devices using hafnia will require knowledge of the phases present and how they vary with time and use. In this Perspective article, the importance of phases present on device performance is discussed, including the extent to which specific classes of devices can tolerate phase impurities. Following, the factors and mechanisms that are known to influence phase stability, including substituents, crystallite size, oxygen point defects, electrode chemistry, biaxial stress, and electrode capping layers, are highlighted. Discussions will focus on the importance of considering both neutral and charged oxygen vacancies as stabilizing agents, the limited biaxial strain imparted to a hafnia layer by adjacent electrodes, and the strong correlation of biaxial stress with resulting polarization response. Areas needing additional research, such as the necessity for a more quantitative means to distinguish the metastable tetragonal and orthorhombic phases, quantification of oxygen vacancies, and calculation of band structures, including defect energy levels for pure hafnia and stabilized with substituents, are emphasized.
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Kim, Dae-Cheol, e Young-Geun Ha. "Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors". Journal of Nanoscience and Nanotechnology 21, n. 3 (1 marzo 2021): 1761–65. http://dx.doi.org/10.1166/jnn.2021.19083.
Testo completoAbstract (sommario):
We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties as low-level leakage current densities of <1.45×10−6 A/cm2, large capacitances (up to 800 nF/cm2), thermal stability (up to 300 °C), and featureless morphology (root-mean-square roughness ˜0.3 nm). As a result, self-assembled gate dielectrics can be incorporated into thin-film transistors with p-type organic semiconductors functioning at ultralow voltages (<-2 V) to achieve enhanced performance (hole mobility: 0.88 cm2/V·s, and Ion/Ioff: > 105, threshold voltage: 0.5 V).
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Dementev, P. A., e E. V. Dementeva. "Kelvin-probe microscopy as a technique of estimation of the charge traps saturation time". Journal of Physics: Conference Series 2103, n. 1 (1 novembre 2021): 012067. http://dx.doi.org/10.1088/1742-6596/2103/1/012067.
Testo completoAbstract (sommario):
Abstract In this work, a method for estimating the saturation time of traps in dielectric layers based on the KPM is proposed. Using hafnium oxide layers as an example, it is shown that when charging with a series of points with different durations, a different dependence of the residual potential on time is observed. It is assumed that this technique makes it possible to evaluate the performance of devices based on dielectric layers.
Tesi sul tema "Hafnium oxide layers"
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Alrifai, Liliane. "Elaboration et caractérisation des couches minces d’oxyde d’hafnium ferroélectrique pour des applications de mémoires non-volatiles intégrées sur silicium". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT110.
Testo completoAbstract (sommario):
Cette thèse explore les propriétés ferroélectriques des films minces à base de HfO₂, en vue de leurs utilisations dans les mémoires à accès aléatoire ferroélectrique (FeRAM). Cette thèse met en avant l'intérêt croissant pour l'oxyde d'hafnium (HfO₂) en raison de sa compatibilité avec la technologie CMOS et de son potentiel pour des dispositifs ferroélectriques à échelle ultra-réduite. La recherche conduite a permis l’étude des films minces de HfO₂ dopés au Gd ou non dopés, déposés par dépôt de couches atomiques assisté par plasma (PEALD) dans une structure métal-isolant-métal (MIM) (TiN/HfO₂/TiN). Plus précisément, il s’est agi d’étudier les propriétés structurales, électriques et d'endurance.Plus précisément, ce travail a permis l’étude des films de HfO₂ dopés au Gd de moins de 10 nm, déposés par PEALD avec un pourcentage de dopage de 1,8 % et recuits à 650 °C dans une atmosphère de N₂. Ces films ont démontré de fortes propriétés ferroélectriques même à des dimensions ultra-fines, confirmées par des mesures de diffraction des rayons X et des mesures électriques, révélant un comportement ferroélectrique. La phase orthorhombique, cruciale pour la ferroélectricité, a été stabilisée à ce niveau de dopage, tandis que la phase monoclinique, non ferroélectrique, a été supprimée. À mesure que l'épaisseur des films augmentait de 4,4 nm à 8,8 nm, la phase orthorhombique se développait et les valeurs de polarisation augmentaient en conséquence. Le champ coercitif est resté autour de 2 MV/cm². Cependant, les films de moins de 4 nm se sont révélés non ferroélectriques, ce qui a été attribué à la présence d'une phase non ferroélectrique proche de la couche interfaciale. Par ailleurs, les films de HfO₂ dopés au Gd ont montré une excellente endurance, de l’ordre de 10¹⁰ cycles de commutation sans fatigue.Pour mieux comprendre l’origine de la stabilization de la phase orthorhombique (ferroélectrique) du HfO2, une comparaison entre des films de HfO2 dopé et de HfO2 non-dopé a été réalisée. Bien que le HfO₂ non dopé ait présenté un comportement ferroélectrique dans des films de moins de 14 nm, avec des niveaux de polarisation comparables à ceux du HfO₂ dopés au Gd pour une épaisseur inférieure à 7 nm, le dopage au Gd a montré de meilleures performances dans les films de plus de 7 nm. Le dopage au Gd a non seulement amélioré la polarisation, mais a également introduit un effet de "réveil" prononcé lors des cycles. Dans le HfO₂ non dopé, nous avons montré que le stress mécanique provenant des électrodes TiN était suffisant pour induire la ferroélectricité, tandis que le dopage au Gd stabilisait la phase ferroélectrique orthorhombique même en l'absence d'électrodes. Bien que le HfO₂ non dopé soit plus adapté aux couches ultra-fines en raison de son procédé de fabrication plus simple, le HfO₂ dopé au Gd offre de meilleures performances dans des films plus épais et des applications nécessitant une plus grande endurance.Une analyse supplémentaire a exploré les effets des températures de recuit et de l'épaisseur de HfO₂ sur les propriétés ferroélectriques, afin d'assurer la compatibilité de ces dispositifs avec les systèmes CMOS. L’étude a montré que le dopage au Gd permet d’abaisser la température de cristallisation de la phase orthorhombique, entraînant la formation de la ferroélectricité à des températures aussi basses que 450 °C, par rapport aux films non dopés qui nécessitaient des températures supérieures à 550 °C. Parallèlement, l'augmentation de l'épaisseur de HfO₂ a également favorisé la cristallisation ferroélectrique à des températures plus basses dans les deux casThis thesis explores the ferroelectric properties of HfO₂-based thin films in view to their potential applications in ferroelectric random access memory (FeRAM). It highlights the growing interest in hafnium oxide (HfO₂) due to its compatibility with CMOS technology and potential for ultra-scaled ferroelectric devices. The research investigates both Gd-doped and undoped HfO₂ thin films deposited by plasma-enhanced atomic layer deposition (PEALD) in a metal-insulator-metal (MIM) structure (TiN/HfO2/TiN), evaluating their structural, electrical, and endurance properties. This work investigates the properties of sub-10 nm Gd-doped HfO₂ films deposited via PEALD with 1.8% doping and annealed at 650°C in an N₂ atmosphere. The films demonstrated strong ferroelectric properties even at ultra-thin dimensions, confirmed by X-ray diffraction and electrical measurements, revealing a clear polarization hysteresis behavior. The orthorhombic phase, crucial for ferroelectricity, was stabilized at this doping level, while the non-ferroelectric monoclinic phase was suppressed. As film thickness increased from 4.4 nm to 8.8 nm, the orthorhombic phase grew, and polarization values increased accordingly. The coercive field remained constant around 2 MV/cm². However, films thinner than 4 nm were found to be non-ferroelectric, which was attributed to the presence of a non-ferroelectric phase close to the interfacial layer. Despite this, Gd-doped HfO₂ films showed excellent endurance, withstanding 10¹⁰ switching cycles without fatigue and switching polarization at low voltages (as low as 0.9 V).To gain deeper insights into the origin of orthorhombic (ferroelectric) phase stabilization Gd-doping in stabilizing the ferroelectric phase, a comparison between Gd-doped HfO2 and undoped HfO₂, processed under the same conditions, was conducted. While undoped HfO₂ exhibited ferroelectric behavior in films under 14 nm, with polarization levels comparable to Gd-doped HfO₂ below a 7 nm thickness, Gd-doping showed superior performance in films thicker than 7 nm. Gd-doping not only enhanced polarization but also introduced a pronounced wake-up effect with cycling. In undoped HfO₂, mechanical stress from TiN electrodes was sufficient to induce ferroelectricity, whereas Gd-doping stabilized the orthorhombic ferroelectric phase even in the absence of electrodes. Although undoped HfO₂ is more suitable for ultra-thin layers due to its simpler fabrication process, Gd-doped HfO₂ offers better performance in thicker films and applications requiring greater polarization.Further analysis explored the effects of annealing temperatures and HfO₂ thickness on the ferroelectric properties, to study the compatibility of these devices with CMOS systems. Gd-doping significantly lowered the crystallization temperature for the orthorhombic phase, enabling ferroelectricity to form at temperatures as low as 450°C, compared to undoped films requiring temperatures above 550°C. In parallel, increasing the HfO₂ thickness further promoted ferroelectric crystallization at lower temperatures in both cases
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King, Peter. "Hafnium oxide-based dielectrics by atomic layer deposition". Thesis, University of Liverpool, 2013. http://livrepository.liverpool.ac.uk/9253/.
Testo completoAbstract (sommario):
In 2007 there was an important change in the architecture of nanotransistors - the building blocks of modern logic and memory devices. This change was from utilising thermally grown silicon dioxide as a dielectric to so-called high-κ hafnium oxide dielectrics grown by atomic layer deposition. The first production logic devices of this era used a hafnium oxide dielectric layer deposited by thermal atomic layer deposition; using HfCl₄ and H₂O as the precursors. Present day fabrication makes use of hafnium oxide-based atomic-layer-deposited dielectric films. The latest nanotransistor devices utilise a third generation hafnium oxide-based dielectric material. This thesis examines hafnium oxide-based thin film dielectric materials prepared by thermal atomic layer deposition on silicon substrates. Specifically the enhancement of the dielectric response of hafnium oxide by the addition of other elements is examined. Two ternary materials systems were deposited by thermal atomic layer deposition and analysed: titanium-hafnium oxide and cerium-hafnium oxide. Hafnium oxide films were deposited to be used as measurement benchmarks. Cerium oxide films were also deposited and analysed in their own right as potential dielectric layers. The hafnium oxide and both ternary deposition experiments used (MeCp)₂Hf(OMe)(Me) as the hafnium precursor. The titanium-hafnium oxide growth used Ti(iOPr)₄ as a titanium source and the cerium oxide and cerium-hafnium oxide work utilised Ce(mmp)₄ as a cerium source. Post-deposition specimen sets consisted of an as-deposited sample, a sample spike-annealed in N₂ at 850°C and a sample annealed for 30 minutes at 500°C. These annealing regimes were performed to mimic typical gate-first and gate-last transistor processing steps. The compositions and thicknesses of the films were measured using medium energy ion scattering. The structure of the films was analysed by X-ray diffraction and Raman spectroscopy. Capacitance-voltage and current density-field measurements were taken from fabricated MOS capacitor specimens to assess the dielectric response of the films. X-ray diffraction and Raman measurements showed that un-doped HfO₂ had monoclinic crystallinity as-deposited and after the two annealing regimes. The dielectric constant and leakage current density, 17 and 1.7x10⁻⁷ A/cm² at -1 MV/cm respectively, are consistent with values reported in the literature for HfO₂ films. The addition of titanium suppressed the crystallinity of the material resulting in amorphous films in compositions with Ti₀.₃Hf₀.₇O₂ titanium and above. The optimum electrical results were recorded for the titanium-hafnium oxide material in the composition Ti₀.₅Hf₀.₅O₂ which had a dielectric constant of 35 as-deposited and a leakage current density of 1.0x10⁻⁷ A/cm² at -1 MV/cm. This composition of film demonstrated similar values after the 500°C/30 min anneal but both dielectric constant and leakage current density suffered after the 850°C/spike anneal; 22 and 1.8x10⁻⁶ A/cm² at -1 MV/cm respectively. Films with compositions of Ti₀.₁Hf₀.₉O₂ demonstrated much lower dielectric constant and higher leakage current density, especially after heat treatment. The addition of cerium in a Ce₀.₁₁Hf⁰.₈₉O₂ composition was found to suppress crystallinity as-deposited and then provoke a lattice-substitutional phase change to the metastable tetragonal/cubic phase after both types of heat treatment. This ceriumactivated phase change resulted in a molar volume modulation compared to un-doped HfO₂. An increased dielectric constant compared to un-doped HfO₂ of 31 was recorded for the 500 °C/30 min anneal with the 850°C/spike anneal resulting in a lower value of 21. Leakage current density was 1.3x10⁻⁷ A/cm² and 3.2x10⁻⁷ A/cm² at -1 MV/cm respectively for the same anneals. Deposition with Ce(mmp)₄ and water was found to result in cubic crystalline films across a growth temperature range 150-350 °C. The frequency dependency of the dielectric properties was found to be influenced by the crystallite size which was governed by the deposition temperature. The highest dielectric constant, 42, was measured for the 150 °C growth temperature with C-V measurements performed at 1 MHz. The two doped HfO₂-based materials systems studied have demonstrated potential as dielectric materials for use in future nanoelectronic devices.
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Pham, Nam Hung. "Liquid-injection atomic layer deposition of cerium-doped hafnium oxide dielectric films". Thesis, University of Liverpool, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.539745.
Testo completo
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DeCerbo, Jennifer N. "Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics". University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783.
Testo completo
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Daniel, Monisha Gnanachandra. "Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments". Thesis, Virginia Tech, 2017. http://hdl.handle.net/10919/78280.
Testo completoAbstract (sommario):
The unprecedented ability of plasmonic metal nano-structures to concentrate light into deep-subwavelength volumes has propelled their use in a vast array of nanophotonics technologies and research endeavors. They are used in sensing, super-resolution imaging, SPP lithography, SPP assisted absorption, SPP-based antennas, light manipulation, etc. To take full advantage of the attractive capabilities of CMOS compatible low-cost plasmonic structures based on Al and Cu, nanolaminate coatings are investigated to improve their long-term stability in corrosive physiological environments. The structures are fabricated using phase-shifting PDMS masks, e-beam deposition, RIE, Atomic Layer Deposition and Rapid Thermal Annealing. An alternate approach using Nanosphere Lithography (NSL) was also investigated. Films were examined using ellipsometry, atomic force microscopy and transmission measurements. Accelerated in-situ tests of Hafnium Oxide/Aluminum Oxide nanolaminate shells in a mildly pH environment with temperatures akin to physiological environments emulated using PBS show greatly enhanced endurance, with stable structures that last for more than one year.Master of Science
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Jeloaica, Léonard. "Etude ab initio des mécanismes réactionnels dans la phase initiale du dépôt par par couches atomiques des oxydes à moyenne et forte permittivité sur silicium". Toulouse 3, 2006. http://www.theses.fr/2006TOU30077.
Testo completoAbstract (sommario):
L'objectif de ce travail est d'apporter un éclairage nouveau à la compréhension des mécanismes physico-chimiques qui contrôlent la croissance des trois oxydes d'Aluminium, de Zirconium, de Hafnium. Ces matériaux sont considérés comme les meilleurs candidats pour remplacer la silice en tant qu'oxyde de grille dans le futur composant MOS. La précision et la fiabilité de la méthode DFT associé à la fonctionnelle B3LYP, ont été testées à l'aide des résultats expérimentaux et des méthodes ab initio les plus précis telles que CCSD(T) et CISD(T), en utilisant différents ensembles des fonctions de bases. Nos résultats montrent que et la méthode hybride DFT peut prédire de façon précise les propriétés statistiques et dynamiques de la famille d'organométalliques (AlxCyHzOt) et des systèmes moléculaires à base de métaux de transition (Zr/HfxClyOzHt). Les premières études systématiques des surfaces d'énergie potentielle de TMA ont été présentes et les caractéristiques des rotors constitués des groups méthyles ont été rapportées avec une grande précision. Les mécanismes réactionnels, à plusieurs étapes, entre les molécules précurseurs de trois oxydes et les molécules d'eau résiduelle phase gazeuse ont été étudies en détail. Les mouvements internes fortement anharmoniques, des espèces moléculaires présentes touts au long du processus d'hydrolyse ont été déterminés. Les effets qualitatifs sur les cinétiques des réactions ont été discutés. La forte exothermicité de la réaction TMA/H2O a été démontrée, alors que la réaction avec les tétrachlorures de Zirconium et Hafnium ont montré un caractère plutôt endothermique. Nous avons aussi étudié les mécanismes réactionnels de la vapeur d'eau avec d'espèces moléculaires chimisorbés en surface. Les réactions interviennent dans les cycles initiales d'ALD sur en substrat de Si(001)-2x1 légèrement oxydé. Les mécanismes que nous proposons sont qualitativement proches des mécanismes d'hydrolyse discutés dans la phase gaz euse : confirmation de la forte réactivité exothermique avec les hydroxyméthyliques d'Aluminium, endothermicité des réactions avec hydroxychlorures de Zirconium et Hafnium. Les composés avec le Zirconium et le Hafnium ont des comportements similaires. Enfin, les effets de coopérativité, à la fois au niveau des molécules de vapeur d'eau, qu'au niveau des complexes en surface, sur les réactions ont été mis en évidence et discutés. Ils montrent des comportements tout à fait intéressants dans le cas des hydroxychlorures des Zirconium et Hafnium. Par contre, ces effets sont de moindre importance dans les cas de l'oxyde d'aluminium, qui est actuellement considéré comme le matériau le plus compatible avec la croissance par ALDThis work attempts to bring a new light on the understanding of some critical aspects of the physicochemical processes that control Alumina, Zirconia and Hafnia ALD growth, yet not sufficiently understood. These materials are addressed as potentially best candidates to replace gate dielectric SiO2 in the near future electronic applications. Most accurate ab initio correlated methods, like couple-cluster CCSD(T) and CISD(T), with different basis sets functions, as well as the available experimental data have been used for testing by a systematic study the accuracy and the reliability of DFT B3LYP functional. Our results have claimed this hybrid-DFT method to be chosen in predicting of high accurate static and dynamic properties throughout the family of organometallic-like (AlxCyHzOt) and transition metal-based (Zr/HfxClyOzHt) molecular systems. First systematic study of torsional potential surfaces of TMA has been performed and the related features of the hindered rotors of the methyl groups revealed with high accuracy. Laying on these accurate results we have also proposed least-squared fit methods to determine frequency scaling factors subject to different thermodynamic properties and/or thermal conditions. Many-step reaction mechanisms of ALD gas phase precursors of each of the three oxides with residual water, or regime of low pressure H2OÓALD pulses, have been studied in detail. Strong anharmonic internal movements of molecular species throughout the hydrolysis reactions have been observed and qualitatively discussed in relation with their possible effects on the reactions' kinetics. TMA/H2O reactions have been validated as strongly exothermic, while Hafnium and Zirconium tetrachlorides have founded to react endothermically with single H2O molecule. We have also studied in detail reaction mechanisms of the related on-surface ALD-complexes with water vapors. Our theoretical investigations address to the initial stage of ALD growth, more s pecifically on SiO2/Si(001)-2x1 like surfaces. The proposed many-step mechanisms, similar to those discussed for the gas phase, confirmed again the strong reactivity of H2O molecule with on-surface Aluminum hydroxymethylides, and responds strong endothemically as for the hydroxylation of Zirconium and Hafnium on-surface hydroxychlorides. The last two proved a very similar surface chemistry. Finally the cooperative effects of H2O molecules have been considered in our models of reactions, and have revealed dramatic influences on the reactivity Zirconium- and Hafnium hydroxychlorides surfaces. Our results proved the importance of both cooperative interactions of on-surface complexes and H2O molecules in the case of the Zirconia and HafniaÓALD growth, while for Aluminum oxide, presently considered ideal for ALD growth, these effects seem of secondary importance
7
Garcia, Ramirez Emmanuel Armando. "Etude et optimisation de matériaux diélectriques et électrodes déposés par ALD pour structures nano-poreuses". Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMC226.
Testo completoAbstract (sommario):
Cette thèse examine les films minces d’oxyde de hafnium (HfO2) pour leur potentiel dans lesnanocondensateurs, répondant aux besoins en miniaturisation et haute performance del’électronique moderne. Le HfO2 est compatible avec la Déposition par Couches Atomiques(ALD), ce qui permet des dépôts minces précis et homogènes, essentiels pour garantir la fiabilitédes dispositifs électroniques. Les films minces sont soumis à différentes techniques de fabricationet de caractérisation pour analyser leur morphologie et leurs propriétés électriques, notamment laconstante diélectrique, la tension de claquage et la capacité de stockage d’énergie. Cette approchepermet de déterminer comment optimiser ces matériaux, à la fois en configurations amorphes eten structures cristallines, pour des performances maximales.Pour les diélectriques amorphes linéaires, HfO2 est combiné avec d’autres oxydes, tels quel’alumine et la silice, dans des structures de nanolaminés et de solutions solides. Ces combinaisonssont conçues pour stabiliser la constante diélectrique et offrir une résistance au claquage,améliorant l'efficacité du stockage d’énergie. La linéarité et la stabilité de ces matériaux amorphesles rendent particulièrement adaptés aux applications nécessitant une capacitance stable.L’étude approfondit aussi les propriétés des diélectriques cristallins non linéaires, dopés avec dusilicium ou de la zircone. Différentes températures de déposition et de recuit révèlent descomportements ferroélectriques et antiferroélectriques, augmentant la densité d’énergie et lastabilité. Cependant, les matériaux ferroélectriques, bien que prometteurs pour des applications àhaute densité, sont sensibles aux variations de tension, ce qui limite leur usage dans les applicationsnécessitant une capacitance constante. Les matériaux antiferroélectriques, en revanche, présententune stabilité accrue face aux variations de tension, mais ils font encore face à des défis d’efficacitéénergétique et de gestion thermique. La recherche souligne la variabilité de la constantediélectrique comme un défi majeur pour l'utilisation de ces matériaux dans des applicationsnécessitant une capacitance stable, comme le filtrage de signaux. Les matériaux nanolaminés etles solutions solides sont privilégiés pour obtenir une capacitance linéaire, mais leur efficacité restelimitée en termes de permittivité. L’exploration des phases non linéaires, cependant, ouvre la voieà des performances accrues dans certaines applications avancées.En conclusion, cette étude apporte un éclairage précieux sur les films minces d’oxyde de hafniumet leur rôle dans les nanocondensateurs, en explorant des solutions d’optimisation pour améliorerles performances diélectriques, notamment par les techniques de fabrication et les compositionsde matériaux. Les matériaux linéaires et non linéaires présentent chacun des avantages distincts,mais des recherches supplémentaires sont nécessaires pour surmonter les défis liés à la durabilité,l’efficacité électrique et la gestion thermique, afin de développer des condensateurs plusperformants pour les technologies électroniques modernesThis research investigates the use of hafnium oxide (HfO2)-based thin films in nanocapacitors, focusing on both their linear and non-linear electrical properties to meet the growing demands of high-performance and miniaturized electronic devices. Starting with the fundamental physics of energy storage capacitors, the investigation highlights the essential characteristics of effective dielectric materials, such as a high dielectric constant and a substantial band gap. Hafnium-based materials are particularly promising due to their compatibility with Atomic Layer Deposition (ALD), which allows for precise and uniform thin-film deposition—crucial for ensuring reliable performance in electronic devices.To understand the potential of these materials, various fabrication and characterization techniques were employed. This includes specific deposition processes to create the thin films and morphological tests to study the physical structure of the capacitors. Electrical testing plays a key role in evaluating critical parameters like dielectric constant, breakdown voltage, and overall energy storage capacity. By analyzing these factors, a comprehensive view of how both linear and non-linear hafnium-based dielectrics perform is provided.When exploring linear, amorphous hafnium-based dielectrics, HfO2 is combined with aluminum oxide and silicon dioxide to enhance dielectric properties. Different configurations, such as nanolaminates and solid solutions, are tested to find the optimal balance. The goal is to achieve materials that maintain a high dielectric constant and resist voltage breakdown, thereby improving their ability to store energy efficiently. On the other hand, a detailed look into non-linear, crystalline dielectrics examines the effects of doping hafnium oxide with elements like zirconia and silicon. Different deposition and annealing temperatures are assessed for their impact on crystalline structure and polarization behavior, revealing complex ferroelectric and antiferroelectric behaviors that could offer high energy density and stability.The findings suggest that while ferroelectric materials might not be suitable for applications requiring linear capacitance due to their sensitivity to voltage variations, antiferroelectric materials show promise. However, they still face challenges related to electrical efficiency and thermal management. Finding materials that can effectively stabilize voltage variations is crucial, as capacitors are increasingly used to manage these fluctuations in modern electronics.A significant challenge identified is the variability in the dielectric constant, which can limit the use of these materials in applications demanding stable capacitance, such as signal filtering. To address this issue, solid solutions and laminated materials, which provide consistent linear capacitance, are prioritized. Although these materials are effective up to a certain permittivity threshold, exploring non-linear phases opens the door to potentially higher performance under specific conditions.In summary, understanding of HfO2-based thin films and their role in nanocapacitors is advanced by this research. By examining both linear and non-linear dielectric materials, insights into how to optimize fabrication techniques and material compositions to improve dielectric properties are provided. Ongoing research into issues like material endurance, electrical efficiency, and thermal management is essential for developing reliable and high-performing capacitors that meet the evolving demands of modern electronic technologies
8
Vieluf, Maik. "Hochauflösende Rutherford-Streuspektrometrie zur Untersuchung von ZrO2-Schichtwachstum im Anfangsstadium". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-38113.
Testo completoAbstract (sommario):
Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion naheThis thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion
9
Chang, Chih-Hsin, e 張志信. "Hafnium Germanium Oxide as Trapping Layer for Nonvolatile Memory Application". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/04732139717939429570.
Testo completoAbstract (sommario):
碩士長庚大學
電子工程學研究所
96
In this thesis, we proposed the fabrication of flash memory device with high-k dielectrics, the HfGeOx, as trapping layer is formed by co-sputtering with Hf and Ge. The thermal stability and charge storage can be improved by GeOx embedding in HfOx. In this thesis, we also compared the electrical characteristic of HfGeOx trapping layer with different tunnel dielectrics: SiO2 and HfTaOx. After different rapid thermal annealing temperature, the hysteresis window does not be increased with arising temperature. It is attributed to crystallize phenomenon in HfGeOx layer with high annealing temperature on SiO2 tunnel dielectrics. On the other hand, we must consider thermal stability of HfTaOx tunnel dielectrics. We use HfTaOx tunnel dielectric due to high thermal stability. The program speed and retention time are improved obviously with RTA temperature less than 900℃.
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Wang, Tuo 1983. "Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities". Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-12-2059.
Testo completoAbstract (sommario):
The continuous scaling of microelectronic devices requires high permittivity (high-k) dielectrics to replace SiO₂ as the gate material. HfO₂ is one of the most promising candidates but the crystallization temperature of amorphous HfO₂ is too low to withstand the fabrication process. To enhance the film thermal stability, HfO₂ is deposited using atomic layer deposition (ALD), and incorporated with various amorphizers, such as La₂O₃, Al₂O₃, and Ta₂O₅. The incorporation is achieved by growing multiple ALD layers of HfO₂ and one ALD layer of MO[subscript x] (M = La, Al, and Ta) alternately (denoted as [xHf + 1M]), and the incorporation concentration can be effectively controlled by the HfO₂-to-MO[subscript x] ALD cycle ratio (the x value). The crystallization temperature of 10 nm HfO₂ increases from 500 °C to 900 °C for 10 nm [xHf + 1M] film, where x = 3, 3, and 1 for M = La, Al, and Ta, respectively. The incorporation of La₂O₃, and Ta₂O₅ will not compromise the dielectric constant of the film because of the high-k nature of La₂O₃, and Ta₂O₅. Angle resolved X-ray photoelectron spectroscopy (AR-XPS) reveals that when the HfO₂-to-MO[scubscript x] ALD cycle ratio is large enough (x > 3 and 4 for La and Al, respectively), periodic structures exist in films grown by this method, which are comprised of repeated M-free HfO₂ ultrathin layers sandwiched between HfM[subscript x]O[scubscript y] layers. Generally, the film thermal stability increases with thinner overall thickness, higher incorporation concentration, and stronger amorphizing capability of the incorporated elements. When the x value is low, the films are more like homogeneous films, with thermal stabilities determined by the film thickness and the amorphizer. When the x value is large enough, the periodically-repeated structure may add an extra factor to stabilize the amorphous phase. For the same incorporation concentration, films with an appropriately high periodicity may have an increased thermal stability. The manner by which the periodic structure and incorporated element affect thermal stability is explored and resolved using nanolaminates comprised of alternating layers of [scubscript y]HfO₂ and [xHf + 1M] × n, where y varied from 2 to 20, x varied from 1 to 2, and n varied from 4 to 22.text
Capitoli di libri sul tema "Hafnium oxide layers"
1
Park, Min Hyuk, Tony Schenk e Uwe Schroeder. "Dopants in Atomic Layer Deposited HfO2 Thin Films". In Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, 49–74. Elsevier, 2019. http://dx.doi.org/10.1016/b978-0-08-102430-0.00005-x.
Testo completo
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Park, Min Hyuk, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun e Cheol Seong Hwang. "Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films". In Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, 75–101. Elsevier, 2019. http://dx.doi.org/10.1016/b978-0-08-102430-0.00007-3.
Testo completo
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Lee, Michael, Abdoullatif Baraket, Nadia Zine, Miguel Zabala, Francesca Campabadal, Nicole Jaffrezic-Renault e Abdelhamid Errachid. "The pH sensing electrochemical characteristics of a thin-layer hafnium oxide field-effect transistor formed by atomic layer deposition". In Instrumentation et Interdisciplinarité, 351–58. EDP Sciences, 2020. http://dx.doi.org/10.1051/978-2-7598-1206-6-044.
Testo completo
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Lee, Michael, Abdoullatif Baraket, Nadia Zine, Miguel Zabala, Francesca Campabadal, Nicole Jaffrezic-Renault e Abdelhamid Errachid. "The pH sensing electrochemical characteristics of a thin-layer hafnium oxide field-effect transistor formed by atomic layer deposition". In Instrumentation et Interdisciplinarité, 351–58. EDP Sciences, 2020. http://dx.doi.org/10.1051/978-2-7598-1206-6.c044.
Testo completo
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Lee, Michael, Abdoullatif Baraket, Nadia Zine, Miguel Zabala, Francesca Campabadal, Nicole Jaffrezic-Renault e Abdelhamid Errachid. "The pH sensing electrochemical characteristics of a thin-layer hafnium oxide field-effect transistor formed by atomic layer deposition". In Instrumentation et Interdisciplinarité, 351–58. EDP Sciences, 2020. https://doi.org/10.1051/978-2-7598-1116-8.c044.
Testo completoAtti di convegni sul tema "Hafnium oxide layers"
1
Forouzmehr, Matin, Amit Tewari, Kimmo Lahtonen, Donald Lupo e Paul R. Berger. "Optimizing Hafnium Oxide Thin-Film Dielectrics: Developing a Novel Atomic Layer Deposition Recipe". In 2024 IEEE International Flexible Electronics Technology Conference (IFETC), 1–4. IEEE, 2024. https://doi.org/10.1109/ifetc61155.2024.10771901.
Testo completo
2
Zyuzin, S., A. Rezvanov, Ya Zasseev, V. Gvozdev, E. Ganykina e E. Gornev. "NUMERIC MODELING OF A DEPOSITION OF HAFNIUM OXIDE LAYERS USING RP-ALD METHOD". In Mathematical modeling in materials science of electronic component. LCC MAKS Press, 2022. http://dx.doi.org/10.29003/m3078.mmmsec-2022/92-94.
Testo completoAbstract (sommario):
In this work, model of remote plasma atomic layer deposition (RP-ALD) of hafnium oxide layers was considered. This model is based on Monte-Carlo method and takes into account the chemical kinetics of a process
3
Starke, A., H. Schink, J. Ebert, J. Kolbe e H. Welling. "Hafnium oxide and aluminum oxide coatings for UV applications". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mdd8.
Testo completoAbstract (sommario):
Single layers of hafnia, alumina, and silica on quartz substrates were deposited by reactive ion plating and ion beam sputtering. Refractive indices and extinction coefficients were determined by spectrophotometric analysis and related to the process parameters. Water adsorption was examined with the aid of optical transmission in the range from 2 to 4 µm. Laser-induced damage testing was performed by a KrF excimer laser at 248 nm. The tested samples were quarterwave stacks of Al2O3/SiO2 and HfO2/SiO2 on silica substrates. All the results are compared and related to the properties of conventional evaported coatings.
4
Kamarauskas, A., L. Staisiunas, D. Seliuta, G. Slekas e Z. Kancleris. "Surface conductivity control with graphene sheets stacked between hafnium oxide layers". In 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2022. http://dx.doi.org/10.1109/irmmw-thz50927.2022.9895813.
Testo completo
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Lin, C. T., J. C. Wang, C. H. Chen, P. W. Huang e C. S. Lai. "Novel Gadolinium Oxide Nanocrystals with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al2O3/SiO2 Dual Tunneling Layers". In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.p-1-20l.
Testo completo
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Pons-Flores, C. A., I. Hernandez, M. Estrada, I. Garduno, A. Cerdeira, J. Tinoco, I. Mejia e R. Picos. "Hafnium-Indium-Zinc oxide thin film transistors using HfO2 as gate dielectric, with both layers deposited by RF sputtering". In 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2016. http://dx.doi.org/10.1109/sbmicro.2016.7731318.
Testo completo
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Murdzek, Jessica A., e Steven M. George. "Thermal Atomic Layer Etching of Amorphous and Crystalline Hafnium Oxide, Zirconium Oxide, and Hafnium Zirconium Oxide". In 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2019. http://dx.doi.org/10.1109/vlsi-tsa.2019.8804645.
Testo completo
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Maslar, J. E., W. S. Hurst, D. R. Burgess, W. A. Kimes, N. V. Nguyen, E. F. Moore, David G. Seiler et al. "In Situ Monitoring of Hafnium Oxide Atomic Layer Deposition". In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. AIP, 2007. http://dx.doi.org/10.1063/1.2799355.
Testo completo
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Xiaoxiao Zhu, Qiliang Li, Dimitris E. Ioannou, William A. Kimes, John S. Suehle, James E. Maslar, Hao D. Xiong, Shuo Yang e Curt A. Richter. "Silicon nanowire memory application using hafnium oxide charge storage layer". In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422492.
Testo completo
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Hsu, Tzu-Yao, Bo-Ting Lin, Jay Shieh e Miin-Jang Chen. "The Ferroelectricity and Crystallinity of Zirconia, Hafnia and Hafnium Zirconium Oxide (HZO) Ultrathin Films Prepared by Atomic Layer Deposition With and Without Post-Annealing". In ASME 2018 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/smasis2018-7946.
Testo completoAbstract (sommario):
Large stable ferroelectricity in hafnium zirconium oxide (HZO) solid solution ultrathin films (including pure zirconia (ZrO2) and hafnia (HfO2)) and ZrO2/HfO2 bilayer ultrathin films of thickness ranging from 5–12 nm, prepared by thermal atomic layer deposition or remote plasma atomic layer deposition (RP-ALD) has been demonstrated. Ferroelectric crystallization of the ZrO2 ultrathin film with high-pressure orthorhombic (o) space group Pbc21 could be achieved without post-annealing due to the plasma-induced thermal stresses experienced by the film during the RP-ALD process. In contrast, for the ZrO2/HfO2 bilayer ultrathin film, due to the high crystallization temperature of HfO2, post-annealing was needed to achieve sufficient confinement of the sandwiched HfO2 layer by the ZrO2 top layer and Si bottom substrate to promote the high-pressure ferroelectric o-phase in HfO2. The ferroelectric properties of the HZO ultrathin films prepared by RP-ALD were highly dependent on the Hf-to-Zr ratio — an increasing amount of HfO2 has been found to be detrimental to the ferroelectricity, mainly due to the high crystallization temperature of HfO2. Without post-annealing, the ferroelectricity of the HZO ultrathin films was governed by the relative amounts of the amorphous phase and the ferroelectric o-phase induced by the plasma treatment. While with post-annealing, the ferroelectricity was governed by the relative amounts of the ferroelectric o-phase and the non-ferroelectric monoclinic (m) phase.