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Articoli di riviste sul tema "High dI/dt"

Autore: Grafiati

Pubblicato: 7 dicembre 2024

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1

Przybysz, J. X., D. L. Miller, S. G. Leslie, and Y. C. Kao. "High dI/dT light-triggered thyristors." IEEE Transactions on Electron Devices 34, no. 10 (1987): 2192–99. http://dx.doi.org/10.1109/t-ed.1987.23216.

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2

Hudgins, Jerry L., and William M. Portnoy. "High di/dt Pulse Switching of Thyristors." IEEE Transactions on Power Electronics PE-2, no. 2 (1987): 143–48. http://dx.doi.org/10.1109/tpel.1987.4766348.

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3

Gerster, Christian, and Patrick Hofer. "Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters." EPE Journal 5, no. 3-4 (1996): 11–16. http://dx.doi.org/10.1080/09398368.1996.11463368.

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4

Li, Zhiqiang, Lin Zhang, Lianghui Li, et al. "A SiC gate turn-off thyristor with high di/dt for fast switching-on applications." Semiconductor Science and Technology 36, no. 12 (2021): 12LT02. http://dx.doi.org/10.1088/1361-6641/ac31e1.

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Abstract High di/dt 4H-silicon carbide (SiC) gate turn-off thyristors (GTOs) are investigated and developed for fast switching-on application. This work has focused on accelerating the turn-on process to improve the di/dt characteristic, and the n-base dopant concentration is carefully designed to increase the injection efficiency of top P+N junction. With reducing n-base dopant concentration from 2.3 × 1017cm−3 to 6.8 × 1016cm−3, the injection efficiency is increased about 18%, and consequently the current rise-up process and subsequent lateral propagation of the anode current are obviously a

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5

TANRIVERDİ, OSMAN, and DENİZ YILDIRIM. "Independent closed loop control of di/dt and dv/dt for high power IGBTs." Turkish Journal of Electrical Engineering and Computer Sciences 30, no. 3 (2022): 487–501. http://dx.doi.org/10.55730/1300-0632.3793.

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Tang, Sheng-Yi. "Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers." Electronics 9, no. 10 (2020): 1573. http://dx.doi.org/10.3390/electronics9101573.

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An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and ga

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Liu, Bo, Ren Ren, Zheyu Zhang, Ben Guo, Fei (Fred) Wang, and Daniel Costinett. "Impacts of High Frequency, High di/dt, dv/dt Environment on Sensing Quality of GaN Based Converters and Their Mitigation." CPSS Transactions on Power Electronics and Applications 3, no. 4 (2018): 301–12. http://dx.doi.org/10.24295/cpsstpea.2018.00030.

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8

Huang, Jun, Haimeng Huang, Xinjiang Lyu, and Xing Bi Chen. "Simulation Study of a Low Switching Loss FD-IGBT With High $dI/dt$ and $dV/dt$ Controllability." IEEE Transactions on Electron Devices 65, no. 12 (2018): 5545–48. http://dx.doi.org/10.1109/ted.2018.2873598.

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9

Haiyang Wang, Xiaoping He, Weiqing Chen, Binjie Xue, and Aici Qiu. "A High-Current High-$di/dt$ Pulse Generator Based on Reverse Switching Dynistors." IEEE Transactions on Plasma Science 37, no. 2 (2009): 356–58. http://dx.doi.org/10.1109/tps.2009.2012553.

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10

Robson, A. E. "Evolution of a z-pinch with constant dI/dt." Nuclear Fusion 28, no. 12 (1988): 2171–78. http://dx.doi.org/10.1088/0029-5515/28/12/006.

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11

Palawa’ae, Elang Rahma, Rintis Hadiani, and Adi Yusuf Muttaqien. "STRATEGI MITIGASI BANJIR BERDASARKAN KAPASITAS SALURAN DRAINASE DI KELURAHAN JAGALAN." Jurnal Riset Rekayasa Sipil 7, no. 2 (2024): 94. http://dx.doi.org/10.20961/jrrs.v7i2.85901.

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<p><em>Flood mitigation is an important step in maintaining the sustainability and safety of urban environments. One key factor that affects the capacity of drainage channels is the flow rate of water through the channels. Therefore, this research aims to assess flood mitigation strategies based on the flow rate in drainage channels using the HSS SCS method. The study was conducted in Jagalan Sub-District, which frequently experiences flooding due to inadequate drainage channel capacity. The HSS SCS method was used to estimate the maximum flow rate that can be accommodated by the d

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12

Takao, Kazuto, Tsutomu Yatsuo, and Kazuo Arai. "High di/dt Switching Characteristics of a SiC Schottky Barrier Diode." IEEJ Transactions on Industry Applications 124, no. 9 (2004): 917–23. http://dx.doi.org/10.1541/ieejias.124.917.

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13

Liu, Qing, Hongbin Pu, Xi Wang, and Jiaqi Li. "A high di/dt 4H-SiC thyristor with ‘-shaped’ n-base." Semiconductor Science and Technology 34, no. 4 (2019): 045005. http://dx.doi.org/10.1088/1361-6641/ab0235.

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14

Wilkening, E. D., and M. Glinkowski. "Spatial and time characteristics of short gap, high di/dt discharges." IEEE Transactions on Plasma Science 21, no. 5 (1993): 489–93. http://dx.doi.org/10.1109/27.249632.

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15

Hua, Qing, Zehong Li, Xi Qu, Bo Zhang, and Yuxiang Feng. "High voltage driver IC with improved immunity to di/dt induced substrate noise." IEICE Electronics Express 12, no. 7 (2015): 20150189. http://dx.doi.org/10.1587/elex.12.20150189.

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16

Chen, Wanjun, Chao Liu, Yijun Shi, et al. "Design and Characterization of High $di/dt$ CS-MCT for Pulse Power Applications." IEEE Transactions on Electron Devices 64, no. 10 (2017): 4206–12. http://dx.doi.org/10.1109/ted.2017.2736529.

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17

Rybalka, S. B., E. A. Kulchenkov, A. A. Demidov, et al. "Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages." Journal of Physics: Conference Series 1679 (November 2020): 022045. http://dx.doi.org/10.1088/1742-6596/1679/2/022045.

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Zhang, Shao Rong, Zhi Li, and Ai Jun Zhu. "FPGA-Based High Precision and Low EMI Switching Power Supply Design." Applied Mechanics and Materials 496-500 (January 2014): 1442–47. http://dx.doi.org/10.4028/www.scientific.net/amm.496-500.1442.

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We analyze the reasons why DC-DC switching power supply generates the electromagnetic interference (EMI), and through the FPGA control the digital-to-analog converter (DAC) to output the pulse width modulation (PWM) signal with high precision and slew rate controlled, the slew rates of the voltage and current of external N-channel MOSFET are controlled. So, dv/dt and di/dt can be decreased in the circuit; and the ripple noise and EMI of switching power supply are reduced vastly in this way. Experimental results show that the ripple noise of switching power supply could be reduced by 80% and EM

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19

O'Brien, Heather, William Shaheen, Aderinto Ogunniyi, et al. "High dI/dt Pulse Switching of 1.0 cm² SiC GTOs." Materials Science Forum 717-720 (May 2012): 1155–58. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1155.

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The Army Research Laboratory has collaborated with Cree, Inc. and Silicon Power Corp. to develop 9 kV-blocking, 1.0 cm2Super-GTOs. In this study, several 1.0 cm2GTOs were individually switched up to 6.0 kA in a low-inductance, highdI/dt(2.1 kA/µs) circuit to evaluate turn-on delay and optimize the gate control. Turn-on delay was evaluated relative to gate drive current, and the delay was reduced by 1.1 µs when gate amplitude was increased from 1 A to 8 A. Increasing gate current delivered to each GTO also successfully reduced variation in turn-on delay from device to device by at least 50%, an

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20

Zeng, Xiang-jun, Xu Yang, and Zhao-an Wang Xi'an. "Analysis of Capacitive and Inductive Coupling inside Hybrid Integrated Power Electronic Module." Journal of Microelectronics and Electronic Packaging 1, no. 3 (2004): 169–75. http://dx.doi.org/10.4071/1551-4897-1.3.169.

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Electromagnetic compatibility has to be given enough attention in the design of hybrid Integrated Power Electronic Module (IPEM) due to the sharply decreased distances between power devices and the control/driving circuits as compared to such distances for conventional power electronic equipment built with discrete devices. The high dν/dt, di/dt and high frequency parasitic ringing emanating from the switching circuit can cause serious EMI within the control/driving circuit due to cross-coupling. This paper analyzes the capacitive and inductive cross-coupling problems inside an IPEM. Finite El

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21

Liu, Liming, Zhao Yuan, Lixue Chen, and Shan Liu. "Experimental investigation on the velocity of cathode spots in a vacuum arc with high di/dt." Journal of Physics D: Applied Physics 55, no. 19 (2022): 195202. http://dx.doi.org/10.1088/1361-6463/ac507e.

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Abstract With the development of DC transmission and aerospace technology, the demands on the breaking capacity of vacuum circuit breakers (VCBs) under high d i d t condition are getting higher and higher. The breaking capacity of VCBs is determined by cathode spots, which provide electrons and metal vapor to maintain the arc. In this paper, the experiments of cathode spot observation were carried out based on the detachable vacuum interrupter and the cup-shaped axial magnetic field contacts. The images of cathode spot distribution were obtained by an ultra high-speed camera. In the initial ex

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22

Letellier, Adrien, Maxime R. Dubois, Joao Pedro F. Trovao, and Hassan Maher. "Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications." IEEE Transactions on Power Electronics 34, no. 1 (2019): 612–23. http://dx.doi.org/10.1109/tpel.2018.2826920.

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23

Putri, Fianita Eka, Monica Feby Zelvia, Nadya Rosma Anggi Cinta Kumala, and Khusaini Khusaini. "Metode Design Thinking pada Perancangan Media Pembelajaran Ular Tangga IPA (ULTAPA) sebagai Peluang Peningkatan Literasi dan Numerasi Siswa SMP." Journal of Innovation and Teacher Professionalism 2, no. 1 (2024): 55–64. http://dx.doi.org/10.17977/um084v2i12024p55-64.

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Rendahnya minat belajar dan kemampuan intelegensi yang kurang berkembang pada peserta didik mencerminkan indikasi lemahnya literasi dan numerasi pada peserta didik. Guru hendaknya mencari tahu kebutuhan belajar siswa yang dapat digunakan untuk menguatkan literasi dan numerasi peserta didik melalui metode Design thinking (DT). DT adalah suatu metodologi desain untuk mengatasi masalah dengan cara memahami kebutuhan manusia yang terlibat dari segi perancangan tatap muka, terdapat lima tahap Design Thinking yaitu, Empathize, Define, Ideate, Prototype, dan Test. penerapan Design Thinking (DT) yang

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24

Zotin, Vitaliy, Alexander Drakin, Sergei Rybalka, Andrey Demidov, and Evgeniy Kulchenkov. "Measuring complex for determining the characteristics of high-voltage silicon carbide Schottky diodes in impulse modes." Applied Physics, no. 6 (December 28, 2021): 67–73. http://dx.doi.org/10.51368/1996-0948-2021-6-67-73.

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This paper describes a developed automated research measuring complex that allows one to determine the parameters of currents, voltages and power of silicon carbide Schottky diodes when applied reverse voltage impulses with amplitudes from 400 to 1000 V. The research  measuring complex was tested on DDSH411A91 («GRUPPA KREMNY EL») and C3D1P7060Q (Cree/Wolfspeed) silicon carbide Schottky diodes and allows to determine their  maximum values of the rate of rise of reverse voltage dV/dt (877 V/ns and 683 V/ns). Also, the maximum values of the current rise rate dI/dt were determined for

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25

Huo, Tianchen, Wenrong Yang, Yiwei Qiao, Haojie Zhang, and Guohang Chen. "Study on EMI suppression of a high–low voltage DC/DC converter in electric vehicle by periodic frequency modulation." International Journal of Applied Electromagnetics and Mechanics 70, no. 4 (2022): 479–90. http://dx.doi.org/10.3233/jae-210240.

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The high–low voltage DC/DC converter of electric vehicle produces high du∕dt and di∕dt due to the high operating frequency of the power devices, which introduce nonnegligible electromagnetic interference. In this paper, the power devices control signals of the high–low voltage DC/DC converter were modulated by periodic signals, the influence of the modulation frequency, the maximum frequency deviation and the modulation waveform on the conducted electromagnetic interference were analyzed. Combined with the published data of the phase-shifted full-bridge circuit of the high–low voltage DC/DC co

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26

Tamrakar, Naresh Kazi, and Dharmendra Khakurel. "Lithologic and morphometric characteristics of the Chure River Basin, Central Nepal." Bulletin of the Department of Geology 15 (January 21, 2013): 35–48. http://dx.doi.org/10.3126/bdg.v15i0.7416.

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The Chure River Basin (CRB) is a small basin (width 5.75 km, length 9.74 km, perimeter 32.35 km and area 35.23 km2) with three sub-watersheds, and is crossed by the Tribhuvan Highway that may be threatened by riverine and allied processes. The geology and morphometry of the basin were studied to search for status of the basin development andriver dynamism. The Chure River is a sixth order river fed by rainstorm, and has length ratio of 2.79, indicating nearly three times the average length of its fifth order segment, showing notable competency. The mean bifurcation ratio of the Chure River is

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27

Ogunniyi, Aderinto, James Schrock, Miguel Hinojosa, et al. "Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs." Materials Science Forum 897 (May 2017): 575–78. http://dx.doi.org/10.4028/www.scientific.net/msf.897.575.

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The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determine by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

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28

Dastugue, Nicole, Stefan Suciu, Geneviève Plat, et al. "In Childhood B-Lineage Acute Lymphoblastic Leukemia (B-ALL) with Hyperdiploidy >50 Chromosomes, Patients with 58 to 66 Chromosomes Have 99% EFS At 6-Year Follow-up: Results of the EORTC CLG 58951 Trial." Blood 118, no. 21 (2011): 565. http://dx.doi.org/10.1182/blood.v118.21.565.565.

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Abstract Abstract 565FN2 Hyperdiploidy >50 chromosomes (HD>50) has long been recognized as favorable group in childhood B-ALL but there is still debate on the factors contributing to heterogeneity of prognosis observed within this entity. Better outcome has been reported for patients (pts) presenting DNA index (DI) >1.16 (Blood 1985;10:213), ≥56 chromosomes (Leukemia 1996;10:213), triple trisomies (TT) +4,+10,+17, double trisomies +4,+10 (Leukemia 2005;19:734) and trisomy 18 (Blood 2003;102:2756) but there is no consensus between the reports and these factors are differently applied i

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Et. al., Mr A. Clement Raj,. "Performance Evaluation of Symmetrical Current Source Multilevel Inverter." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 10 (2021): 5598–607. http://dx.doi.org/10.17762/turcomat.v12i10.5370.

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In this paper proposes a Current Source Multilevel Inverter (CSMLI) with a single rating inductor topology. The multilevel inverters are generally acquainted with power converter's applications because of decreased dv/dt, di/dt stress, and extremely efficient for minimising harmonic distortion in the both output voltage and current. The proposed nine-level current source inverter has analyses under symmetrical operation, and their operation are compared using PI and Fuzzy PI controllers with multicarrier PWM topology. PV utilized as a DC source, photovoltaic energy is an environmentally friend

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Tong, Xin, Siyang Liu, Weifeng Sun, et al. "SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery." Solid-State Electronics 148 (October 2018): 70–74. http://dx.doi.org/10.1016/j.sse.2018.07.007.

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Kurnia, Rahmat, Siska Febriyanti S, and Siska Erianti. "MANAJEMEN RISIKO BERBASIS ISO 31000:2018 PADA USAHA PEMBIBITAN DT. MARUHUN." Jurnal Manajemen dan Profesional 4, no. 2 (2023): 146–60. http://dx.doi.org/10.32815/jpro.v4i2.1681.

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Tujuan penelitian ini untuk mengetahui manajemen risiko yang diterapkan pada usaha pembibitan Dt. Maruhun di Nagari Tabek Patah Kecamatan Salimpaung. Jenis penelitian ini adalah penelitan adalah penelitian lapangan (field research) dengan metode penelitian pendekatan kualitatif. Teknik pengumpulan data yang dilakukan dengan cara observasi, wawancara dan dokumentasi. Sedangkan teknis analisis data adalah dengan menggunakan metode penilaian risiko atau risk asessment ISO 31000: 2018. Hasil penelitian menunjukkan bahwa terdapat 2 kejadian risiko dengan Kriteria Crisis Risk yaitu penjualan tidak s

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Nathanson, David A., Amanda L. Armijo, Michelle Tom, et al. "Co-targeting of convergent nucleotide biosynthetic pathways for leukemia eradication." Journal of Experimental Medicine 211, no. 3 (2014): 473–86. http://dx.doi.org/10.1084/jem.20131738.

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Pharmacological targeting of metabolic processes in cancer must overcome redundancy in biosynthetic pathways. Deoxycytidine (dC) triphosphate (dCTP) can be produced both by the de novo pathway (DNP) and by the nucleoside salvage pathway (NSP). However, the role of the NSP in dCTP production and DNA synthesis in cancer cells is currently not well understood. We show that acute lymphoblastic leukemia (ALL) cells avoid lethal replication stress after thymidine (dT)-induced inhibition of DNP dCTP synthesis by switching to NSP-mediated dCTP production. The metabolic switch in dCTP production trigge

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Lee, Gi-Young, Min-Shin Cho, and Rae-Young Kim. "Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors." Electronics 10, no. 14 (2021): 1722. http://dx.doi.org/10.3390/electronics10141722.

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With the development of wide-bandgap (WBG) power semiconductor technology, such as silicon carbide (SiC) and gallium nitride (GaN), the technology of power converters with high efficiency and high-power density is rapidly developing. However, due to the high rate-of-rise of voltage (dv/dt) and of current (di/dt), compared to conventional Si-based power semiconductor devices, the reliability of the device is greatly affected by the parasitic inductance component in the switching loop. In this paper, we propose a power loop analysis method based on lumped parameter modeling of a power circuit bo

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Delardi, Ahmad Fikri, Siddhi Saputro, Warsito Atmodjo, Heriyoso Setyono, Rikha Widiaratih, and Aris Ismanto. "Studi Sebaran Material Padatan Tersuspensi Di Muara Sungai Sambong, Kabupaten Batang." Indonesian Journal of Oceanography 1, no. 1 (2019): 70–79. http://dx.doi.org/10.14710/ijoce.v1i1.6265.

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Muara Sungai Sambong berpotensi mengalami pendangkalan akibat pengendapan sedimen tersuspensi. Kali Sambong terus mengalami pendangkalan karena sedimentasi dan sampah sekaligus alur menuju muara pantai yg mengalami penyempitan. Tujuan dari penelitian ini adalah untuk mengetahui pengaruh arus dalam persebaran MPT di Muara Sungai Sambong, Kabupaten Batang, Jawa Tengah. Penelitian dimulai dari tahap pengambilan data di lapangan pada tanggal 7-9 Maret 2017 di Perairan Muara Sungai Sambong, Batang dan tahap pengolahan serta analisis data hasil pengukuran lapangan. Materi yang digunakan meliputi dat

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Luo, Haoze, Wuhua Li, and Xiangning He. "Online High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method With Maximum Recovery Current di/dt." IEEE Transactions on Power Electronics 30, no. 5 (2015): 2395–404. http://dx.doi.org/10.1109/tpel.2014.2342377.

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Liu, Chao, Wanjun Chen, Yijun Shi, et al. "A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics." IEEE Transactions on Electron Devices 66, no. 2 (2019): 1018–25. http://dx.doi.org/10.1109/ted.2018.2887137.

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Beye, Mamadou Lamine, Thilini Wickramasinghe, Jean François Mogniotte, et al. "Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off." Electronics 10, no. 2 (2021): 106. http://dx.doi.org/10.3390/electronics10020106.

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The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic di

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Beye, Mamadou Lamine, Thilini Wickramasinghe, Jean François Mogniotte, et al. "Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off." Electronics 10, no. 2 (2021): 106. http://dx.doi.org/10.3390/electronics10020106.

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The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic di

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Liu, Xinzhi, Suhaidi Shafie, Mohd Amran Mohd Radzi, and Norhafiz Azis. "SPICE Simulation Assisted-Dynamic Rds(on) Characterization in 200V Commercial Schottky p-GaN HEMTs Under Unstable Phases." Journal of Physics: Conference Series 2841, no. 1 (2024): 012001. http://dx.doi.org/10.1088/1742-6596/2841/1/012001.

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Abstract This paper presents a comprehensive analysis of dynamic and static RDS(ON) in Schottky p-GaN High Electron Mobility Transistors (HEMTs), highlighting the impact of off-state and hot electron trapping on device performance. The authors observed significant hysteresis in the transfer characteristics of a 200V commercial Schottky p-GaN, attributing this to charge trapping effects. A novel experimental setup, employing a multi-pulse test synchronous buck converter circuit with additional gate control and a clamping circuit, enabled precise characterization of dynamic RDS(ON) under varying

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Malhan, Rajesh Kumar, S. J. Rashid, Mitsuhiro Kataoka, et al. "Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET." Materials Science Forum 600-603 (September 2008): 1067–70. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1067.

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Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losse

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Shabari, Anugrah Riskel, Alfi Satriadi Satriadi, and Warsito Atmodjo. "Padatan Tersuspensi yang Dipengaruh oleh Proses Pasang Surut di Perairan Kaliboyo, Kabupaten Pekalongan." Journal of Marine Research 8, no. 4 (2019): 393–401. http://dx.doi.org/10.14710/jmr.v8i4.24775.

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ABSTRAK: Perairan Kaliboyo merupakan daerah yang berpotensi mengalami pendangkalan akibat pengendapan sedimen tersuspensi. Potensi dari pengdangkalan tersebut dapat diketahui dengan mengetahui nilai konsentrasi dan sebaran Material Padatan Tersuspensi (MPT). Konsentrasi MPT yang tinggi di laut dipengaruhi oleh arus yang dibangkitkan oleh pasang surut. Tujuan dilakukannya penelitian ini adalah untuk mengetahui pengaruh arus laut terhadap konsentrasi dan sebaran MPT di Perairan Kaliboyo Kabupaten Batang, Jawa Tengah. Materi yang digunakan meliputi utama berupa data sampel air dan arus laut sedan

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Vivek, Kema. "A High Power Density Converter with a Continuous Input Current Waveform for Satellite Power Applications." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (2021): 4523–27. http://dx.doi.org/10.22214/ijraset.2021.35978.

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Conventional Active Clamp-Forward topology is studied for a satellite converter owing to its comparitively simple structure, minimum number of components and fine clamping capability concerning its switch voltage stress. However, it has a high switch voltage stress,a high di/dt level and has pulsating input current shape. These are disadvantageous with respect to the EMI filter size and high input voltage converter applications.To get the better of these drawbacks, a new ACF topology with a continuous input current waveform is proposed . By this proposed waveform ,the voltage stresses on the m

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43

Astuti, Lismining Pujiyani, and Indriatmoko Indriatmoko. "Kemampuan Beberapa Tumbuhan Air dalam Menurunkan Pencemaran Bahan Organik dan Fosfat untuk Memperbaiki Kualitas Air." Jurnal Teknologi Lingkungan 19, no. 2 (2018): 183. http://dx.doi.org/10.29122/jtl.v19i2.2063.

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ABSTRACTAquatic plants are important part of aquatic ecosystem that can be used as an phytoremidiation agent, trapping organic matter in eutrophic waters as well as cleaning and controlling heavy metal pollution, pesticides and oil. The aim of research to assess the ability of some aquatic plants to organic matter and phosphate reduction for improve water quality. Research conducted at the Greenhouse of Institution Research for Fishes Resources Rehabilitation in May 2016. The study using factorial completely randomized and all treatment were conducted in triplicate. Aquatic plants are used Azo

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Yu, Shengbao, Nan Chen, Lihui Gao, Haigen Zhou, and Yong Huang. "Suppressing Conducted DM EMI in an Active Power Filter via Periodic Carrier Frequency Modulation." Energies 12, no. 10 (2019): 1903. http://dx.doi.org/10.3390/en12101903.

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Active power filters (APF) aim at solving the harmonic problem originated by the nonlinear load in power systems. However, the high dv/dt and di/dt outputs from power electronic devices in a voltage source converter on APF introduced unwanted conducted electromagnetic interference (EMI) when compensating for the low-frequency harmonic components. Hence, this paper develops a spectrum analysis approach to investigate and quantify the source differential-mode (DM) voltage of a single-phase shunt APF to suppress the DM EMI via periodic carrier frequency modulation (PCFM). In this scheme, the anal

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Asllani, Besar, Pascal Bevilacqua, Hervé Morel, et al. "Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons." Materials Science Forum 1004 (July 2020): 923–32. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.923.

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This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double

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46

Moradpour, Milad, Paolo Pirino, Michele Losito, Wulf-Toke Franke, Amit Kumar, and Gianluca Gatto. "Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles." Energies 13, no. 14 (2020): 3720. http://dx.doi.org/10.3390/en13143720.

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DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide (SiC) provide higher frequency and lower power loss, however, their high di/dt and dv/dt transients result in higher electromagnetic interference (EMI). On the other hand, some gate driver parameters such as gate resistor ( R G ) have a contradictory effect on efficiency ( η ) and EMI. The idea of this paper is to investigate the values of these p

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47

Adikadarsih, Sri, Siska Permata, Taryono, Suyadi, and Panjisakti Basunanda. "Hubungan Antara Hasil dan Komponen Hasil Wijen (Sesamum indicum L.) pada Generasi F1 dan F2 Persilangan Sbr2, Sbr3, dan Dt36." Buletin Tanaman Tembakau, Serat & Minyak Industri 7, no. 1 (2016): 45. http://dx.doi.org/10.21082/bultas.v7n1.2015.45-51.

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<p>Dalam program pemuliaan tanaman wijen, informasi keragaman genetik dan hubungan antarsifat sangat penting untuk menentukan keberhasilan seleksi. Penelitian yang bertujuan untuk mempelajari keragaman genetik dan hubungan antara komponen hasil dan hasil wijen pada generasi F1 dan F2 persilangan Sbr 2, Sbr 3, dan Dt 36 telah dilaksanakan dari bulan November 2012 sampai dengan Februari 2013 di Padangan, Sitimulyo, Piyungan, Bantul, Yogyakarta. Penelitian menggunakan rancangan acak lengkap (RAL) dengan tiga ulangan. Bahan tanam yang digunakan adalah benih tetua, F1, dan F2 hasil persilanga

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Masing, Musa. "Konseling Agama Pada Siswa Pecandu Narkoba." PEADA' : Jurnal Pendidikan Kristen 1, no. 1 (2020): 20–30. http://dx.doi.org/10.34307/peada.v1i1.9.

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The purpose of giving counseling for drug addicts students is to correct mistakes that are the new direction and purpose of life in God. Direction of life to God who will be equipped to a better future. In this study using qualitative research with case study techniques. The subjects in this study consisted of 2 students, junior high school students in Samarinda City who were addicted to drugs but were undergoing rehabilitation at the Tanah Merah Samarinda Rehabilitation Center and one person as a mental mentor of religion. This research focuses on Religious Counseling on addicted students. Th

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Koehler, Andrew, Geoffrey Foster, Jacob Leach, et al. "(Invited) GaN Photoconductive Semiconductor Switches for Efficient High-Voltage Power Conversion Applications." ECS Meeting Abstracts MA2023-02, no. 32 (2023): 1577. http://dx.doi.org/10.1149/ma2023-02321577mtgabs.

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Gallium nitride (GaN) photoconductive switch (PCSS) technology can revolutionize high-voltage, efficient power-switching capabilities. PCSSs are optically driven, which advantageously isolates sensitive control circuitry from electromagnetic interference (EMI) resulting from rapidly switching high voltages and currents (high dI/dt or dV/dt). Fast switching times and extremely low on-resistances are achievable in PCSSs. The conductive channel region during on-state (under illumination) also serves as the voltage hold-off region in the off-state (dark) and does not require an additional drift la

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Purnama, Jajang Jaya, Hendri Mahmud Nawawi, Susy Rosyida, Ridwansyah Ridwansyah, and Risnandar Risnandar. "Klasifikasi Mahasiswa HER Berbasis Algoritma SVM dan Decision Tree." Jurnal Teknologi Informasi dan Ilmu Komputer 7, no. 6 (2020): 1253. http://dx.doi.org/10.25126/jtiik.0813080.

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<p>Mahasiswa di setiap perguruan tinggi dituntut untuk memperoleh pengetahuan dan keterampilan yang memenuhi syarat dengan prestasi akademik. Hasil dari pembelajaran mahasiswa didapat dari ujian teori dan praktek, setiap mahasiswa wajib menuntaskan nilai sesuai kriteria kelulusan minimum dari masing-masing dosen pengajar, jika dibawah batas minimum maka mahasiswa mengikuti her. Her adalah salah satu cara untuk menuntaskan kriteria kelulusan minimum. Mahasiswa yang mengikuti her setiap semesternya hampir mencapai angka yang relatif tinggi dari jumlah seluruh mahasiswa. Untuk mengurangi ju

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