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Articoli di riviste sul tema "Ion bombardment"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 25 luglio 2025

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1

Lu, Rui, Guangliang Hu, Wanli Zhao, et al. "Effects of He-ion bombardment on the ferroelectric and dielectric properties of BaHf_0.17Ti_0.83O₃ films." Applied Physics Letters 121, no. 7 (2022): 072901. http://dx.doi.org/10.1063/5.0107438.

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Focused helium ion bombardment provides an effective means to modify the properties of ferroelectric materials. This work systematically investigates the effect of helium ion bombardment on the structural, ferroelectric, and dielectric properties of relaxor BaHf0.17Ti0.83O3 thin films at different bombardment doses in the range of 1 × 1012 to 7 × 1015 ions/cm2. The films show more defects and slightly expanded out-of-plane lattice parameters with an increase in dose. Despite helium ion bombardment introducing more defects and structural disorder in the system, the bombardment-induced dipole po

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2

Choi, Seung Kyu, Jae Min Jang, and Woo Gwang Jung. "Influence of Ion Bombardment of Sapphire on Electrical Property of GaN Layer." Solid State Phenomena 124-126 (June 2007): 615–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.615.

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Ion beam bombardment of proton, He+, Ar+, Xe+ ions were made on single crystal substrate by cyclotron. The GaN epi-layer material was grown by MOCVD on ion beam bombarded substrate. After deposition of GaN epi-layer heat treatment was made in flow of N2. The RMS roughness of the substrate was increased by ion bombardment. The GaN crystal quality for substrates of ion bombardment was better than that for bare substrates. Raman spectrum analysis indicated the induced stress in the GaN epi-layer during the heat treatment. The electrical property of GaN was improved after heat treatment. It is est

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3

Wang, Airu, Osamu Ohashi, and N. Yamaguchi. "Effect of Argon Ion Bombardment on Diffusion Bonded Joint of Various Metals." Materials Science Forum 449-452 (March 2004): 901–4. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.901.

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Specimens of aluminum (Al), austenitic stainless steel (SUS304L), pure iron (Fe) and Oxygen-free high conductivity copper (Cu) were treated by argon ion bombardment, and then were bonded by diffusion bonding method. The effects of argon ion bombardment on diffusion-bonded joints of four kinds of metallic materials were compared from the tensile strength at real bonded area and the fractographs. The results showed that bonding temperature was lowered by argon ion bombardment treatment for four kinds of materials. The effect of argon ion bombardment on diffusion-bonded joint depended strongly on

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4

Gholami, Nasim, Babak Jaleh, Reza Golbedaghi, et al. "Modification of Chitosan Membranes via Methane Ion Beam." Molecules 25, no. 10 (2020): 2292. http://dx.doi.org/10.3390/molecules25102292.

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Chitosan has been used for biomedical applications in recent years, primarily because of its biocompatibility. A chitosan membrane with a 30 μm thickness was prepared and investigated for its surface modification using methane ions. Methane ions were implanted into the chitosan membrane using a Kaufman ion source; bombardment was accomplished using three accelerating voltages of ion beams—30, 55, and 80 kV. The influence of the ion bombardment on morphology, crystallinity, and hydrophilicity was investigated. Attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy analy

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5

Yamashita, Mutsuo. "Metal ion production by ion bombardment." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, no. 5 (1996): 2795–801. http://dx.doi.org/10.1116/1.580202.

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6

Window, B., and F. Sharples. "Effect of ion bombardment during the low-mobility growth of metallic superlattices." Journal of Materials Research 3, no. 5 (1988): 856–61. http://dx.doi.org/10.1557/jmr.1988.0856.

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The structure of sputtered Mo/Fe superlattices of periodicities 9 to 30 Å grown at a substrate temperature of 300 K at various pressures and levels of low-energy ion bombardment have been studied using x-ray diffraction. The samples show the growth of an amorphous phase below 17 Å periodicity and a crystalline phase above 21 Å, with mixed phases in between. Limited ion bombardment reduces the coherency in the growth direction in the crystalline phase, while heavy bombardment sufficient to promote significant mixing acts to improve the coherency, but not to the level observed in films with no b

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7

Kim, Sang-Pil, Huck Beng Chew, Eric Chason, Vivek B. Shenoy, and Kyung-Suk Kim. "Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 468, no. 2145 (2012): 2550–73. http://dx.doi.org/10.1098/rspa.2012.0042.

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Here, we uncover three new nanoplasticity mechanisms, operating in highly stressed interstitial-rich regions in face-centred-cubic (FCC) metals, which are particularly important in understanding evolution of surface stress and morphology of a FCC metal under low-energy noble-gas ion bombardments. The first mechanism is the configurational motion of self-interstitials in subsonic scattering during ion bombardments. We have derived a stability criterion of self-interstitial scattering during ion embedding, which consistently predicts the possibility of vacancy- and interstitial-rich double-layer

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8

Fujiwara, Yukio, and Naoaki Saito. "Negative ion beam bombardment of a protic ionic liquid: Alleviating surface charging and damage and analyzing the surface of organic insulating materials." Journal of Vacuum Science & Technology A 40, no. 5 (2022): 053203. http://dx.doi.org/10.1116/6.0001999.

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Positive ion beams are widely used in surface processing and analysis; however, serious surface charging can occur in the case of insulating materials. To address this issue, we investigate bombardment effects of ionic liquid negative ions emitted from the tip of a sharp needle wetted with the protic ionic liquid, diethylmethylammonium trifluoromethanesulfonate. Experimental results show that the potential of an electrically floating metal target bombarded with the ionic liquid negative ions is slightly higher (about 1 V) than that of a front electrode, indicating that the target potential can

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9

Ai, Yong Ping, Ying Ying Zeng, Li Jun Liu, Xiao Ming Huang, and Tai Ping Zhou. "Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering." Key Engineering Materials 474-476 (April 2011): 448–53. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.448.

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This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increas

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10

Hirano, Motohisa, and Shojiro Miyake. "Tribological Improvement of Ag Films by Ion Beam Enhanced Deposition." Journal of Tribology 110, no. 1 (1988): 64–68. http://dx.doi.org/10.1115/1.3261576.

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This paper investigates the tribological properties of Ag film fabricated by ion enhanced deposition at atmospheric room temperature, whereby 150 keV Ar ion bombardment and Ag ion plating are performed simultaneously. In the absence of a lubricant, friction test apparatus employing ball-plate geometry is used. Also, properties such as film crystallinity, morphology and concentration profile are examined to study the high energy ion bombardment effect related to the film’s tribological properties. The activation of the mutual diffusion process which results from simultaneous ion bombardment dur

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11

Hobday, Steven, Roger Smith, Ursula Gibson, and Asta Richter. "Ion bombardment of C60films." Radiation Effects and Defects in Solids 142, no. 1-4 (1997): 301–18. http://dx.doi.org/10.1080/10420159708211615.

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12

Wehner, G. K. "SPUTTERING BY ION BOMBARDMENT." Annals of the New York Academy of Sciences 101, no. 3 (2006): 803–4. http://dx.doi.org/10.1111/j.1749-6632.1963.tb54935.x.

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13

Beardmore, Keith, and Roger Smith. "Ion bombardment of polyethylene." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 102, no. 1-4 (1995): 223–27. http://dx.doi.org/10.1016/0168-583x(95)80145-c.

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14

Howe, L. M., D. P. McCooeye, M. H. Rainville, J. D. Bonnett, and D. Phillips. "Ion bombardment of Zr3Fe." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 59-60 (July 1991): 884–88. http://dx.doi.org/10.1016/0168-583x(91)95725-s.

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15

Selyukov R. V., Izyumov M. O., Naumov V. V., and Mazaletskiy L. A. "Formation of (100) texture in thin Ti films under low-energy ion bombardment." Technical Physics Letters 48, no. 15 (2022): 25. http://dx.doi.org/10.21883/tpl.2022.15.53816.18890.

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10-40 nm Ti films with mixed crystalline texture (100)+(001) are exposed to ion bombardment in inductively coupled Ar plasma by applying the bias -30 V to the films. It is found that such a treatment leads to the formation of (100) texture in films. This result is explained by the generation of the compressive stress in films as a result of ion bombardment. The thinner the film the less time is required to form the (100) texture. Keywords: crystalline texture, ion bombardment, titanium, thin films.

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16

Goto, Tetsuya, Yoshinobu Shiba, Akinobu Teramoto, Yukio Kishi, and Shigetoshi Sugawa. "Effect of charge-up of surfaces of sintered Y₂O₃ and yttrium oxyfluoride on their erosion rates due to ion bombardment." Journal of Vacuum Science & Technology B 40, no. 6 (2022): 062205. http://dx.doi.org/10.1116/6.0002162.

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The erosion rate of sintered Y2O3 and yttrium oxyfluoride (Y-O-F) due to Ar ion bombardment was investigated for use in the plasma process chamber. The Ar ion bombardment was performed by irradiations of Ar plasma and Ar ion beam. In addition, charge-up behavior of these ceramics was investigated by two methods. One was the measurement of the surface voltage during the plasma irradiation (the so-called self-bias voltage), and the other was the measurement of the surface voltage generated due to the accumulation of static electricity in the clean room air. It was found that the negative self-bi

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17

Kupferer, Astrid, Michael Mensing, Jan Lehnert, Stephan Mändl, and Stefan Mayr. "Carbon and Neon Ion Bombardment Induced Smoothing and Surface Relaxation of Titania Nanotubes." Nanomaterials 11, no. 9 (2021): 2458. http://dx.doi.org/10.3390/nano11092458.

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Titania nanotube arrays with their enormous surface area are the subject of much attention in diverse fields of research. In the present work, we show that not only 60 keV and 150 keV ion bombardment of amorphous titania nanotube arrays yields defect creation within the tube walls, but it also changes the surface morphology: the surface relaxes and smoothens in accordance with a curvature-driven surface material’s transport mechanism, which is mediated by radiation-induced viscous flow or radiation-enhanced surface diffusion, while the nanotubes act as additional sinks for the particle surface

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18

YONEKURA, DAISUKE, and RI-ICHI MURAKAMI. "INFLUENCE OF ION BOMBARDMENT ON CRITICAL LOAD OF CrN FILM DEPOSITED ONTO ALUMINUM ALLOY BY ARC ION PLATING METHOD." International Journal of Modern Physics B 20, no. 25n27 (2006): 3842–47. http://dx.doi.org/10.1142/s0217979206040465.

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To improve the adhesive strength between the film and substrate, ion bombardment is frequently performed before the deposition of thin film coatings. In this study scratch tests were carried out on aluminum alloy protected with CrN film coated by arc ion plating method. In order to investigate the influence of ion bombardment conditions on the adhesive strength between the aluminum alloy substrate and the CrN coating, the ion bombardment process was performed before CrN coating under several different bias voltages. The properties near the interface were analyzed using SIMS. As a result, the i

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19

Iwaki, Masaya. "Ion Beam Modification of Carbon Materials." Solid State Phenomena 107 (October 2005): 107–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.107.

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A study has been made of surface properties of carbon materials modified by ion beams. Substrates used were natural diamonds, glass-like carbon plates and polymer sheets. Ion species were chemically-active elements such as C, N and O, inert gas elements such as He, Ne and Ar, and metallic elements such as Cr and Ti. It was found that diamond becomes electrically conductive in ion implanted layers, which are amorphous or graphite-like structures. Electrical conductivity depends on implanted species, doses and target temperatures. It was found that glass-like carbon consisting of graphite and di

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20

Rossnagel, S. M., and J. J. Cuomo. "Ion-Beam-Assisted Deposition and Synthesis." MRS Bulletin 12, no. 2 (1987): 40–51. http://dx.doi.org/10.1557/s0883769400068391.

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Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of t

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21

Yonekura, Daisuke, Tomoyuki Ishikawa, and Riichi Murakami. "Influence of Ion Bombardment Process on Adhesion between CrN Coatings and Aluminum Alloy." Key Engineering Materials 353-358 (September 2007): 1887–90. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1887.

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Scratch tests were carried out to examine the influence of gas pressure during ion bombarding on adhesion between CrN coatings and aluminum alloy using nitrogen and argon gas. The critical load clearly increased with increasing the nitrogen gas pressure. However, argon gas pressure hardly affected the critical load. The result of SIMS showed that ion bombardment in nitrogen gas generated high Cr content layer at the aluminum substrate surface and the Cr content increased with increasing the pressure. The ion bombardment in argon gas generated low Cr content surface layer and the pressure hardl

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22

Tay, B. K., X. Shi, S. P. Lau, et al. "X-RAY REFLECTIVITY STUDY OF TETRAHEDRAL AMORPHOUS CARBON FILMS." International Journal of Modern Physics B 14, no. 02n03 (2000): 181–87. http://dx.doi.org/10.1142/s0217979200000170.

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Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mix

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23

Kovách, Gergely, Gábor Pető, Albert Karacs, M. Veres, Hajnalka Csorbai, and A. Sólyom. "Thin Film Carbon Layers with Continously Changing Bonding Properties." Materials Science Forum 537-538 (February 2007): 207–14. http://dx.doi.org/10.4028/www.scientific.net/msf.537-538.207.

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Polycrystalline diamond and diamond-like carbon (DLC) films were deposited by microwave chemical vapor deposition (MW-CVD) and by pulsed laser deposition (PLD) respectively. Ar ion bombardment was used to change the properties of these layers. The sp2 bonds were determined directly by reflected electron energy loss spectroscopy (REELS) and further characterization was made by Raman scattering. The polycrystalline diamond showed only very slight π-π* transition at 6.5 eV, but after Ar ion bombardment strong peak was formed but definitely shifted to lower energy compared to the well known π-π* t

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24

Abdul-Kader, A. M., and Andrzej Turos. "Ion Beam Induced Modifications of Biocompatible Polymer." Solid State Phenomena 239 (August 2015): 149–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.239.149.

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Ion beam bombardment has shown great potential for improving the surface properties of polymers. In this paper, the ion beam-polymer interaction mechanisms are briefly discussed. The main objective of this research was to study the effects of H-ion beam on physico-chemical properties of Ultra-high-molecular-weight polyethylene (UHMWPE) as it is frequently used in biomedical applications. UHMWPE was bombarded with 65 keV H-ions to fluences ranging from 1x1014–2x1016 ions/cm2. Changes of surface layer composition produced by ion bombardment of UHMWPE samples were studied. The hydrogen release an

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25

MATSUO, J., M. AKIZUKI, J. NORTHBY, G. H. TAKAOKA, and I. YAMADA. "SPUTTERING WITH GAS CLUSTER-ION BEAMS." Surface Review and Letters 03, no. 01 (1996): 1017–21. http://dx.doi.org/10.1142/s0218625x96001820.

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A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.

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26

Sangyuenyongpipat, S., Thiraphat Vilaithong, L. D. Yu, Rattikorn Yimnirun, Pisith Singjai, and Ian G. Brown. "Development of In Situ Atomic Force Microscopy for Study of Ion Beam Interaction with Biological Cell Surface." Solid State Phenomena 107 (October 2005): 47–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.47.

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The interaction between ion beam and biological cells has been studied to apply ionbeam- induced mutation to breeding of crops and gene transfer in cells. Formation of micro-craters has been observed after ion bombardment of plant cells and they are suspected to act as pathways for exogenous macromolecule transfer in the cells. A technique of in-situ atomic force microscopy (AFM) in the ion beam line is being developed to observe ion bombardment effects on cell surface morphology during ion bombardment. A commercial AFM is designed to place inside the target chamber of the bioengineering ion b

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Kuświk, Piotr, Alexander Gaul, Maciej Urbaniak, et al. "Tailoring Perpendicular Exchange Bias Coupling in Au/Co/NiO Systems by Ion Bombardment." Nanomaterials 8, no. 10 (2018): 813. http://dx.doi.org/10.3390/nano8100813.

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Here, we systematically investigated the influence of ion bombardment with different fluences on the strength and direction of the exchange bias coupling in Au/Co/NiO systems with perpendicular magnetic anisotropy of the Co layer. We found that the direction of the exchange bias coupling can be reversed as a result of ion bombardment performed in an external magnetic field which is in the opposite direction to the magnetic field applied during film deposition. Moreover, the strength of the exchange bias coupling can be tailored by varying the ion fluence. These results show behaviors similar t

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Li, Chengji, and Zhong Xu. "Diffusion Mechanism of Ion Bombardment." Surface Engineering 3, no. 4 (1987): 310–12. http://dx.doi.org/10.1179/sur.1987.3.4.310.

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Morant, C., J. M. Sanz, and L. Galán. "Ar-ion bombardment effects onZrO2surfaces." Physical Review B 45, no. 3 (1992): 1391–98. http://dx.doi.org/10.1103/physrevb.45.1391.

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Bachman, B. J., and M. J. Vasile. "Ion bombardment of polyimide films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 4 (1989): 2709–16. http://dx.doi.org/10.1116/1.575779.

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Malherbe, Johan B., O. S. Odutemowo, E. G. Njoroge, D. F. Langa, T. T. Hlatshwayo, and C. C. Theron. "Ion bombardment of glassy carbon." Vacuum 149 (March 2018): 19–22. http://dx.doi.org/10.1016/j.vacuum.2017.11.006.

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Doughty, G. "Ion bombardment modification of surfaces." Tribology International 19, no. 1 (1986): 52–54. http://dx.doi.org/10.1016/0301-679x(86)90096-4.

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Johnson, R. E., and L. J. Lanzerotti. "Ion bombardment of interplanetary dust." Icarus 66, no. 3 (1986): 619–24. http://dx.doi.org/10.1016/0019-1035(86)90095-3.

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McLafferty, Fred W. "Fast atom/ion bombardment (FAB)." International Journal of Mass Spectrometry and Ion Processes 122 (December 1992): 1–2. http://dx.doi.org/10.1016/0168-1176(92)87003-w.

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Falcone, G., and F. Gullo. "Sputtering by light-ion bombardment." Physics Letters A 125, no. 8 (1987): 432–34. http://dx.doi.org/10.1016/0375-9601(87)90178-2.

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Brown, W. L. "Ion bombardment effects in polymers." Radiation Effects 98, no. 1-4 (1986): 115–37. http://dx.doi.org/10.1080/00337578608206104.

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Liu, J., G. L. Huppert, and H. H. Sawin. "Ion bombardment in rf plasmas." Journal of Applied Physics 68, no. 8 (1990): 3916–34. http://dx.doi.org/10.1063/1.346278.

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Bisten, M., J. Freisinger, H. Löb, P. Neumann, and A. Scharmann. "Surface modification by ion bombardment." Review of Scientific Instruments 63, no. 4 (1992): 2390–92. http://dx.doi.org/10.1063/1.1142937.

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Wiedersich, H. "Kinetic processes during ion bombardment." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (March 1985): 1–10. http://dx.doi.org/10.1016/0168-583x(85)90521-x.

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Doughty, Gordon. "Ion bombardment modification of surfaces." Precision Engineering 7, no. 4 (1985): 233–34. http://dx.doi.org/10.1016/0141-6359(85)90009-1.

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Dai, Wei, Zhixue Liu, and Melvin Lim. "Influence of Cr Ion Bombardment on the Growth of Cu Coatings Deposited by Magnetron Sputtering on ABS Substrates." Polymers 15, no. 1 (2022): 80. http://dx.doi.org/10.3390/polym15010080.

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Cu coatings were deposited on acrylonitrile-butadiene-styrene copolymer (ABS) substrates by DC magnetron sputtering with Cu target. Cr ions generated by arc evaporation were used to bombard the ABS substrates before the Cu coating process. The influences of the Cr ion bombardment on the surface topography and chemical bonds of the ABS substrates and the adhesion of the Cu coatings on the ABS substrate were studied using scanning electron microscopy, Fourier transform infrared spectroscopy, and micro-Scratch Tester as a function of bias voltage and treatment duration. The results show that the

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Ugli, Sodikjanov Jakhongirbek Shukhratbek. "CHANGES IN THE SURFACE OF CdS BOMBARDED BY O+ IONS." American Journal of Engineering and Technology 5, no. 11 (2023): 25–29. http://dx.doi.org/10.37547/tajet/volume05issue11-05.

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In this study, we investigate the structural and chemical changes occurring on the surface of cadmium sulfide (CdS) when subjected to bombardment with oxygen ions (O+). CdS is a semiconductor material with variousapplications in optoelectronic devices, and understanding its surface modifications under ion bombardment is crucial for improving its performance. Using a combination of analytical techniques, including X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS), we explore the alterations induced by O+ ion bombardment. O

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He, Xiao-Ming, Wen-Zhi Li, and Heng-De Li. "Investigation of TiC films synthesized by low energy ion bombardment." Journal of Materials Research 9, no. 9 (1994): 2355–61. http://dx.doi.org/10.1557/jmr.1994.2355.

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Low energy bombardment of CHn+ at 100-800 eV has been used to prepare TiC film at room temperature by dual ion beam sputtering. The ion bombardment energies and densities obviously affect the metallographic morphology, the crystalline orientation, and constituent ratio of TiC films. TiC films formed under 200-600 eV CHn+ bombarding with 120-190 μA/cm2 possess much finer and compact microstructure in the compressive stress state. Its hardness is in the range of 2650-2880 kgf/mm2. The tribological tests indicate that TiC films synthesized on AISI 52100 steel by DIBS with low energy bombardment e

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Liu, Ying, Hengbo Li, Chongyu Wang, Gaoyuan Yang, Frank Frost, and Yilin Hong. "Ordering Enhancement of Ion Bombardment-Induced Nanoripple Patterns: A Review." Nanomaterials 15, no. 6 (2025): 438. https://doi.org/10.3390/nano15060438.

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Abstract (sommario):

Low-energy ion bombardment (IB) has emerged as a promising, maskless nanofabrication tool for quasi-periodic nanoripples, marked by a high throughput and low cost. As templates, these IB-induced, self-organized surface nanoripples have shown potential for applications in diverse fields. However, the challenge of tailoring the ordering of these ripple patterns is preventing the widespread application of IB. Moreover, the enhancement of the ordering of these self-organized nanostructures involves the fundamental academic questions of nanoripple coupling (or superimposition) and guided self-organ

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45

Li, Yu Lan, Xiao Dong Peng, and Wei Dong Xie. "Study on Al Alloy Surfaces Treated by Ion Beams." Materials Science Forum 561-565 (October 2007): 211–14. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.211.

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Abstract (sommario):

Plasma-enhanced ion beams are used for the surface modification of 2024 Al and 7075 Al alloy samples. The morphology of the treated surface of the samples is examined. The corrosion resistance and bending fatigue properties were measured on the treated and untreated samples. The effects of ion beam parameters are discussed. It is indicated that during the ion bombardment, craters are formed and surface melting is produced on the treated surfaces. The effects of ion beam bombardment are limited to the surface layer of samples. With the ion beam energies used in this study, improved corrosion re

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46

Pan, J. S., C. H. A. Huan, A. T. S. Wee, H. S. Tan, and K. L. Tan. "Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs." Journal of Materials Research 13, no. 7 (1998): 1799–807. http://dx.doi.org/10.1557/jmr.1998.0254.

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Abstract (sommario):

Ion beam nitridation (IBN) of GaAs at room temperature was studied as a function of N2+ ion incident angle at ion energy of 10 keV. The ion beam bombardment surface area of GaAs was characterized in situ by both Auger electron spectroscopy (AES) and small spot-size x-ray photoelectron spectroscopy (XPS). Thin GaN reaction layers are formed at all N2+ ion incident angles, whereas the formation of As–N bonds has not been found. However, the degree of nitridation of Ga decreases with increasing incident angle. The observed angular dependence of the N incorporation can be explained in terms of spu

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47

Weitzel, Karl Michael. "Bombardment Induced Ion Transport through Ion Conducting Glasses." Diffusion Foundations 6 (February 2016): 107–43. http://dx.doi.org/10.4028/www.scientific.net/df.6.107.

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Abstract (sommario):

The recently developed bombardment induced ion transport (BIIT) technique is reviewed. BIIT is based on shining an energy-selected alkali ion beam at the surface of a sample of interest. Attachment of these ions leads to the build-up of a surface potential and a surface particle density. This in turn generates the corresponding gradients which induce ion transport towards a single metal electrode connected to the backside of the sample where it is detected as a neutralization current. Two different versions of BIIT are presented, i.) the native ion BIIT and ii.) the foreign ion BIIT. The forme

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48

Lee, Min-Ku, Hee-Soo Kang, Whung-Whoe Kim, Joung-Soo Kim, and Won-Jong Lee. "Characteristics of TiN film deposited on stellite using reactive magnetron sputter ion plating." Journal of Materials Research 12, no. 9 (1997): 2393–400. http://dx.doi.org/10.1557/jmr.1997.0317.

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Abstract (sommario):

TiN films were deposited onto stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the substrate bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing N2/Ar ratio and from (200) to (111) and then (220) with increasing the substrate bias. The change of the

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49

Gupta, B. K., Jacques Chevallier, and Bharat Bhushan. "Tribology of Ion Bombarded Silicon for Micromechanical Applications." Journal of Tribology 115, no. 3 (1993): 392–99. http://dx.doi.org/10.1115/1.2921649.

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Abstract (sommario):

Silicon is used in the fabrication of microelectromechanical systems (MEMS). The friction and wear characteristics are of major design concern for any mechanical device requiring relative motion. In the present investigations we have studied the influence of ion bombardment on the microstructure, crystallinity, composition, microhardness, friction, and wear behavior. The ion bombardment modifies the elastic/plastic deformation characteristics and crack nucleation that occurs during the indentation. C+ bombarded monocrystalline and polycrystalline Si exhibit very low coefficient of friction (0.

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50

Kim, Jieun, Sahar Saremi, Megha Acharya, et al. "Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films." Science 369, no. 6499 (2020): 81–84. http://dx.doi.org/10.1126/science.abb0631.

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Abstract (sommario):

Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarizati

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