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Articoli di riviste sul tema "LED APPLICATIONS"

Autore: Grafiati
Pubblicato: 11 settembre 2023

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1

Shintaku, Fumihiro. "LED - Applications in Marine Equipments". Journal of The Japan Institute of Marine Engineering 49, n. 5 (2014): 603–6. http://dx.doi.org/10.5988/jime.49.603.

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Chervinsky, M. "New NX LEDS from CREE. NX LED assemblies applications". ELECTRONICS: Science, Technology, Business 170, n. 9 (2017): 86–90. http://dx.doi.org/10.22184/1992-4178.2017.170.9.86.90.

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3

Wood, Jonathan. "Ultraviolet LED promises new applications". Materials Today 9, n. 7-8 (luglio 2006): 16. http://dx.doi.org/10.1016/s1369-7021(06)71568-1.

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4

Lee, Vincent W., Nancy Twu e Ioannis Kymissis. "Micro-LED Technologies and Applications". Information Display 32, n. 6 (novembre 2016): 16–23. http://dx.doi.org/10.1002/j.2637-496x.2016.tb00949.x.

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5

Hatakoshi, Gen-ichi. "LED and LED Lighting". Journal of The Institute of Image Information and Television Engineers 66, n. 4 (2012): 281–86. http://dx.doi.org/10.3169/itej.66.281.

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6

Lee, Tsung-Wen, e Janice H. Nickel. "Memristor Resistance Modulation for Analog Applications". IEEE Electron Device Letters 33, n. 10 (ottobre 2012): 1456–58. http://dx.doi.org/10.1109/led.2012.2207429.

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7

Shih, Ju Yi, Shu Ling Lai e Huai Tzu Cheng. "Design and Applications of LED Textiles". Advanced Materials Research 821-822 (settembre 2013): 453–58. http://dx.doi.org/10.4028/www.scientific.net/amr.821-822.453.

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Abstract (sommario):
As a new and efficient light source, LED has the advantages of long service life, low power consumption, small volume, light weight, rich color and fast response. Therefore, LED seems apparently quite suitable for functional apparel design, and becomes an important item of development, exhibition and promotion for research institutions and the clothing industry. In the recent years, the development trend of textile application of LED is changed from simple light bulb and light bar to the emergence of new material, including soft packaging, optical fiber, LED yarn, and organic light emitting diode. This paper describes components and systems of LED, textile application material and using method, concept illustration and design idea of some selected application cases. The purpose of this paper is to spread the knowledge of function, esthetics and practical value which displayed by the LED application in clothing, and improve both customer acceptance and market potential of luminous dresses in the clothing market.
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8

Titkov, I. E., L. A. Delimova, A. S. Zubrilov, N. V. Seredova, I. A. Liniichuk e I. V. Grekhov. "ZnO/GaN heterostructure for LED applications". Journal of Modern Optics 56, n. 5 (10 marzo 2009): 653–60. http://dx.doi.org/10.1080/09500340902737051.

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9

Tan, Siew Li, Shiyong Zhang, Wai Mun Soong, Yu Ling Goh, Lionel J. J. Tan, Jo Shien Ng, John P. R. David et al. "GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications". IEEE Electron Device Letters 32, n. 7 (luglio 2011): 919–21. http://dx.doi.org/10.1109/led.2011.2145351.

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10

Wang, Han, Thiti Taychatanapat, Allen Hsu, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero e Tomas Palacios. "BN/Graphene/BN Transistors for RF Applications". IEEE Electron Device Letters 32, n. 9 (settembre 2011): 1209–11. http://dx.doi.org/10.1109/led.2011.2160611.

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11

Liao, Yu-An, Wei-Hsun Lin, Yi-Kai Chao, Wen-Hao Chang, Jen-Inn Chyi e Shih-Yen Lin. "In-Plane Gate Transistors for Photodetector Applications". IEEE Electron Device Letters 34, n. 6 (giugno 2013): 780–82. http://dx.doi.org/10.1109/led.2013.2258456.

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12

Park, Bong-Ryeol, e Ho-Young Cha. "Thermal consideration in LED array design for LCD backlight unit applications". IEICE Electronics Express 7, n. 1 (2010): 40–46. http://dx.doi.org/10.1587/elex.7.40.

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13

Wang, Chih-Lin, Yuan-Jung Yao, Ruei-Teng Lin, Ming-Lun Chen e Sheng-Lung Su. "P-77: Some Requirements on LED Characteristics for LCD TV Applications". SID Symposium Digest of Technical Papers 41, n. 1 (2010): 1536. http://dx.doi.org/10.1889/1.3500003.

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14

Jaeseok Jeon, V. Pott, Hei Kam, R. Nathanael, E. Alon e Tsu-Jae King Liu. "Perfectly Complementary Relay Design for Digital Logic Applications". IEEE Electron Device Letters 31, n. 4 (aprile 2010): 371–73. http://dx.doi.org/10.1109/led.2009.2039916.

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15

Lee, Yi-Chia, Ming-Huang Li, Y. T. Cheng, Wensyang Hsu e Sheng-Shian Li. "Electroplated Ni-CNT Nanocomposite for Micromechanical Resonator Applications". IEEE Electron Device Letters 33, n. 6 (giugno 2012): 872–74. http://dx.doi.org/10.1109/led.2012.2190131.

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16

Salcedo, Javier A., Jean-Jacques Hajjar, Slavica Malobabic e Juin J. Liou. "Bidirectional Devices for Automotive-Grade Electrostatic Discharge Applications". IEEE Electron Device Letters 33, n. 6 (giugno 2012): 860–62. http://dx.doi.org/10.1109/led.2012.2190261.

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17

Yun, Yang-Hun, Te-Yu J. Kao e Kenneth K. O. "Variable Inductors in CMOS for Millimeter-Wave Applications". IEEE Electron Device Letters 33, n. 7 (luglio 2012): 1081–83. http://dx.doi.org/10.1109/led.2012.2196966.

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18

Sun Jung Kim, Byung Jin Cho, Ming Fu Li, Xiongfei Yu, Chunxiang Zhu, A. Chin e Dim-Lee Kwong. "PVD HfO2 for high-precision MIM capacitor applications". IEEE Electron Device Letters 24, n. 6 (giugno 2003): 387–89. http://dx.doi.org/10.1109/led.2003.813381.

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19

Bonderover, E., e S. Wagner. "A Woven Inverter Circuit for e-Textile Applications". IEEE Electron Device Letters 25, n. 5 (maggio 2004): 295–97. http://dx.doi.org/10.1109/led.2004.826537.

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20

Passlack, M., R. Droopad, Z. Yu, N. Medendorp, D. Braddock, X. W. Wang, T. P. Ma e T. Buyuklimanli. "Screening of Oxide/GaAs Interfaces for MOSFET Applications". IEEE Electron Device Letters 29, n. 11 (novembre 2008): 1181–83. http://dx.doi.org/10.1109/led.2008.2004569.

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21

Yagi, Takaaki. "High Power LED products and its applications". JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN 85, Appendix (2001): 289–90. http://dx.doi.org/10.2150/jieij1980.85.appendix_289.

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22

Park, Seo-Jun, Sung-Hwan Byeon, Sun-Jae Kim, Kyoung-Soo Park e Gyung-Suk Kil. "Economic analysis on the applications of shipboard LED luminaires". Journal of the Korean Society of Marine Engineering 40, n. 4 (31 maggio 2016): 342–47. http://dx.doi.org/10.5916/jkosme.2016.40.4.342.

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23

SHATALOV, M., A. LUNEV, X. HU, O. BILENKO, I. GASKA, W. SUN, J. YANG et al. "PERFORMANCE AND APPLICATIONS OF DEEP UV LED". International Journal of High Speed Electronics and Systems 21, n. 01 (marzo 2012): 1250011. http://dx.doi.org/10.1142/s0129156412500115.

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Abstract (sommario):
We discuss physics, design, fabrication, performance, and selected applications of Deep Ultraviolet Light Emitting Diodes (DUV LEDs). Our analysis reveals the relative contributions of electrical injection, internal quantum efficiency, and light extraction efficiency to the overall DUV LED performance. Our calculations show that the reduction of the dislocation density at least below value of 2×108 1/cm3 is necessary for reaching high DUV LED efficiency. Better light extraction has been achieved using an innovative p-type transparent sub-contact layer and reflecting ohmic p-type contact resulting in nearly tripling DUV LED power. At high power dissipation, temperature rise might be significant, and we present data showing the power degradation with temperature increase and the results of the detailed 1D and 3D analysis of thermal impedance of DUV LEDs. As an example of DUV LED application, we report on microbial disinfection using 19 watt 275 nanometer DUV LED.
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24

Liu, W. F., J. I. Oh e W. Z. Shen. "Light Trapping in Single Coaxial Nanowires for Photovoltaic Applications". IEEE Electron Device Letters 32, n. 1 (gennaio 2011): 45–47. http://dx.doi.org/10.1109/led.2010.2086428.

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25

Moon, J. S., D. Curtis, D. Zehnder, S. Kim, D. K. Gaskill, G. G. Jernigan, R. L. Myers-Ward et al. "Low-Phase-Noise Graphene FETs in Ambipolar RF Applications". IEEE Electron Device Letters 32, n. 3 (marzo 2011): 270–72. http://dx.doi.org/10.1109/led.2010.2100074.

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26

Dong, Shurong, Jian Wu, Meng Miao, Jie Zeng, Yan Han e Juin J. Liou. "High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications". IEEE Electron Device Letters 33, n. 10 (ottobre 2012): 1345–47. http://dx.doi.org/10.1109/led.2012.2208934.

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27

Singh, Pushpapraj, Chua Geng Li, Prakash Pitchappa e Chengkuo Lee. "Tantalum-Nitride Antifuse Electromechanical OTP for Embedded Memory Applications". IEEE Electron Device Letters 34, n. 8 (agosto 2013): 987–89. http://dx.doi.org/10.1109/led.2013.2262918.

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28

Can Zheng, R. Coffie, D. Buttari, J. Champlain e U. K. Mishra. "Oxidation control of GaAs pHEMTs for high efficiency applications". IEEE Electron Device Letters 23, n. 7 (luglio 2002): 380–82. http://dx.doi.org/10.1109/led.2002.1015203.

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29

Levenets, V. V., R. E. Amaya, N. G. Tarr, T. J. Smy e J. W. M. Rogers. "Characterization of silver CPWs for applications in silicon MMICs". IEEE Electron Device Letters 26, n. 6 (giugno 2005): 357–59. http://dx.doi.org/10.1109/led.2005.848120.

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30

Palacios, T., A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck e U. K. Mishra. "High-power AlGaN/GaN HEMTs for Ka-band applications". IEEE Electron Device Letters 26, n. 11 (novembre 2005): 781–83. http://dx.doi.org/10.1109/led.2005.857701.

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31

Quoc Ngo, A. M. Cassell, A. J. Austin, Jun Li, S. Krishnan, M. Meyyappan e C. Y. Yang. "Characteristics of aligned carbon nanofibers for interconnect via applications". IEEE Electron Device Letters 27, n. 4 (aprile 2006): 221–24. http://dx.doi.org/10.1109/led.2006.870865.

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32

Ventrice, D., P. Fantini, Andrea Redaelli, A. Pirovano, A. Benvenuti e F. Pellizzer. "A Phase Change Memory Compact Model for Multilevel Applications". IEEE Electron Device Letters 28, n. 11 (novembre 2007): 973–75. http://dx.doi.org/10.1109/led.2007.907288.

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33

Chu, Rongming, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Steven P. DenBaars e Umesh K. Mishra. "V-Gate GaN HEMTs for X-Band Power Applications". IEEE Electron Device Letters 29, n. 9 (settembre 2008): 974–76. http://dx.doi.org/10.1109/led.2008.2001639.

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34

Sung-Min Yoon, Soon-Won Jung, Seung-Yun Lee, Young-Sam Park e Byoung-Gon Yu. "Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications". IEEE Electron Device Letters 30, n. 4 (aprile 2009): 371–73. http://dx.doi.org/10.1109/led.2009.2013879.

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35

Chowdhury, Sk F., Maruthi N. Yogeesh, Sanjay K. Banerjee e Deji Akinwande. "Black Phosphorous Thin-Film Transistor and RF Circuit Applications". IEEE Electron Device Letters 37, n. 4 (aprile 2016): 449–51. http://dx.doi.org/10.1109/led.2016.2536102.

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36

Zhang, Kai, Yuechan Kong, Guangrun Zhu, Jianjun Zhou, Xinxin Yu, Cen Kong, Zhonghui Li e Tangsheng Chen. "High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications". IEEE Electron Device Letters 38, n. 5 (maggio 2017): 615–18. http://dx.doi.org/10.1109/led.2017.2687440.

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37

Syamsul, Mohd, Nobutaka Oi, Satoshi Okubo, Taisuke Kageura e Hiroshi Kawarada. "Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications". IEEE Electron Device Letters 39, n. 1 (gennaio 2018): 51–54. http://dx.doi.org/10.1109/led.2017.2774290.

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38

Luo, Shijiang, Nuo Xu, Zhe Guo, Yue Zhang, Jeongmin Hong e Long You. "Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications". IEEE Electron Device Letters 40, n. 4 (aprile 2019): 635–38. http://dx.doi.org/10.1109/led.2019.2898275.

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39

Du, Feibo, Shiyu Song, Fei Hou, Wenqiang Song, Long Chen, Jizhi Liu, Zhiwei Liu e Juin J. Liou. "An Enhanced Gate-Grounded NMOSFET for Robust ESD Applications". IEEE Electron Device Letters 40, n. 9 (settembre 2019): 1491–94. http://dx.doi.org/10.1109/led.2019.2926103.

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40

Javeed, Patan, Lochan Krishna Yadav, P. Venkatesh Kumar, Ranjit Kumar e Shakti Swaroop. "SEPIC Converter for Low Power LED Applications". Journal of Physics: Conference Series 1818, n. 1 (1 marzo 2021): 012220. http://dx.doi.org/10.1088/1742-6596/1818/1/012220.

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41

Kirm, M., E. Feldbach, H. Mägi, V. Nagirnyi, E. Tõldsepp, S. Vielhauer, T. Jüstel, T. Jansen, N. M. Khaidukov e V. N. Makhov. "Silicate apatite phosphors for pc-LED applications". Proceedings of the Estonian Academy of Sciences 66, n. 4 (2017): 383. http://dx.doi.org/10.3176/proc.2017.4.14.

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42

Luo, Xiaobing, e Run Hu. "THERMAL MANAGEMENT IN LED PACKAGING AND APPLICATIONS". Annual Review of Heat Transfer 18 (2015): 371–414. http://dx.doi.org/10.1615/annualrevheattransfer.2015011154.

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43

Haladejová, K., A. Prnová, R. Klement, W. H. Tuan, S. J. Shih e D. Galusek. "Aluminate glass based phosphors for LED applications". Journal of the European Ceramic Society 36, n. 12 (settembre 2016): 2969–73. http://dx.doi.org/10.1016/j.jeurceramsoc.2015.11.027.

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44

Breidenassel, Nicole, Stefan Grötsch e Wolfgang Schnabel. "61.3: LED Light Source for RPTV Applications". SID Symposium Digest of Technical Papers 37, n. 1 (2006): 1816. http://dx.doi.org/10.1889/1.2433393.

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45

Nakane, Hiroki, Mio Kumai, Masayoshi Hagi e Kiyofumi Nagai. "Advanced LED UV inks for industrial applications". NIP & Digital Fabrication Conference 31, n. 1 (1 gennaio 2015): 448–51. http://dx.doi.org/10.2352/issn.2169-4451.2015.31.1.art00099_1.

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46

Yang, Guomao, Sheng Peng, Andrew Ridyard e John Kuta. "UV LED Curing in Inkjet Printing Applications". NIP & Digital Fabrication Conference 24, n. 1 (1 gennaio 2008): 535–37. http://dx.doi.org/10.2352/issn.2169-4451.2008.24.1.art00020_2.

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47

Ko, Young-Seok, e Shi-Hong Park. "A Study of White-LED Driver IC for Mobile Applications". Journal of the Korean Institute of Electrical and Electronic Material Engineers 22, n. 7 (1 luglio 2009): 572–75. http://dx.doi.org/10.4313/jkem.2009.22.7.572.

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48

Chang, S. Z., H. Y. Yu, A. Veloso, A. Lauwers, A. Delabie, J.-L. Everaert, C. Kerner, P. Absil, T. Hoffmann e S. Biesemans. "The Application of an Ultrathin ALD HfSiON Cap Layer on SiON Dielectrics for Ni-FUSI CMOS Technology Targeting at Low-Power Applications". IEEE Electron Device Letters 28, n. 7 (luglio 2007): 634–36. http://dx.doi.org/10.1109/led.2007.899331.

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49

Jeong, Duk Young, Mohammad Masum Billah e Jin Jang. "Amorphous InGaZnO/Poly-Si Coplanar Heterojunction TFT for Memory Applications". IEEE Electron Device Letters 42, n. 8 (agosto 2021): 1172–75. http://dx.doi.org/10.1109/led.2021.3090785.

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50

Xue, Mei, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benitez, William A. Goddard, Jeffrey I. Zink e Kang L. Wang. "A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications". IEEE Electron Device Letters 31, n. 9 (settembre 2010): 1047–49. http://dx.doi.org/10.1109/led.2010.2052018.

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