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Articoli di riviste sul tema "Light Emitting Diodes"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 25 luglio 2025

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1

Salman, RK. "Research note: Light emitting diodes as solar power resources." Lighting Research & Technology 51, no. 3 (2018): 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and paralle

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Feng, XF, W. Xu, QY Han, and SD Zhang. "Colour-enhanced light emitting diode light with high gamut area for retail lighting." Lighting Research & Technology 49, no. 3 (2015): 329–42. http://dx.doi.org/10.1177/1477153515610621.

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Light emitting diodes with high colour quality were investigated to enhance colour appearance and improve observers' preference for the illuminated objects. The spectral power distributions of the light emitting diodes were optimised by changing the ratios of the narrow band red, green and blue light emitting diodes, and the phosphor-converted broad-band light emitting diode to get the desired colour rendering index and high gamut area index. The influence of the light emitting diode light on different coloured fabrics was investigated. The experimental results and the statistical analysis sho

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Hayes, Clinton J., Kerry B. Walsh, and Colin V. Greensill. "Light-emitting diodes as light sources for spectroscopy: Sensitivity to temperature." Journal of Near Infrared Spectroscopy 25, no. 6 (2017): 416–22. http://dx.doi.org/10.1177/0967033517736164.

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Understanding of light-emitting diode lamp behaviour is essential to support the use of these devices as illumination sources in near infrared spectroscopy. Spectral variation in light-emitting diode peak output (680, 700, 720, 735, 760, 780, 850, 880 and 940 nm) was assessed over time from power up and with variation in environmental temperature. Initial light-emitting diode power up to full intensity occurred within a measurement cycle (12 ms), then intensity decreased exponentially over approximately 6 min, a result ascribed to an increase in junction temperature as current is passed throug

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4

Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct b

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5

Muray, Kathleen. "Photometry of diode emitters: light emitting diodes and infrared emitting diodes." Applied Optics 30, no. 16 (1991): 2178. http://dx.doi.org/10.1364/ao.30.002178.

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6

Li, Yueqi. "Performance Improvement Based on Latitude Classification of Perovskite Light-Emitting Diodes." Applied and Computational Engineering 24, no. 1 (2023): 185–92. http://dx.doi.org/10.54254/2755-2721/24/20230705.

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The Perovskite Light-emitting Diode (PeLED) can effectively convert light energy and electrical energy, and the study of Light-Emitting Diode (LED) is conducive to the efficient use of energy. Starting from the dimension classification of perovskite light-emitting diodes, this paper introduces the advantages of perovskite in different dimensions and the methods to improve the performance of perovskite light-emitting diodes. It is expected to realize the preparation of low-cost and high-performance perovskite light-emitting diodes. Light-emitting diodes or electroluminescent devices have many e

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Lewis, R. B., D. A. Beaton, Xianfeng Lu, and T. Tiedje. "light emitting diodes." Journal of Crystal Growth 311, no. 7 (2009): 1872–75. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.093.

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Shen, Yida. "Comparative analysis between light-emitting diodes using quantum dots and organic light-emitting diodes." Applied and Computational Engineering 23, no. 1 (2023): 135–40. http://dx.doi.org/10.54254/2755-2721/23/20230626.

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Due to its customizable emission peaks, high saturation chromaticity, and low cost, quantum dot luminescence technology has gained significant attention as the most cutting-edge technology in the optoelectronics sector. Whether the technology of making light emitting diodes from solution treatable quantum dots-(QLED)-can emerge and compete with organic light emitting diode (OLED) displays will become the focus of this paper. Through the property and function of the quantum dots and by looking at some waveforms of quantum dots, the essay describes the specific structure of QLED and the preparat

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9

Sherniyozov, А. А., F. A. Shermatova, Sh D. Payziyev, et al. "Simulation of physical processes in light-emitting diode pumped lasers." «Узбекский физический журнал» 23, no. 3 (2021): 38–42. http://dx.doi.org/10.52304/.v23i3.262.

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We have developed an end-to-end simulation model for the light-emitting diode-pumped solidstate laser using the Monte Carlo photon tracing technique. The model considers complete specifics and spectral characteristics of light-emitting diodes. This model is the first of its kind to enable comprehensive analysis of light-emitting diode-pumped laser systems to the best of our knowledge. The model revealed several critical implications, which can be considered in the practical realization of light-emitting diode-pumped lasers.

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10

Malevskaya A. V., Kalyuzhnyy N. A., Mintairov S. A., et al. "High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors." Semiconductors 55, no. 14 (2022): 2166. http://dx.doi.org/10.21883/sc.2022.14.53866.9711.

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Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE=37.5% at current densities greater than &gt;10 A/cm2 have been fabricated. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, InGaAs quantum wells.

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Malevskaya A. V., Il’inskaya N. D., Kalyuzhnyy N. A., et al. "Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures." Semiconductors 56, no. 13 (2022): 2081. http://dx.doi.org/10.21883/sc.2022.13.53906.9679.

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Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2-1.5 μm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved. Keywords: light-

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Hontaruk, O. M. "Low doses effect in GaP light-emitting diodes." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 2 (2016): 183–87. http://dx.doi.org/10.15407/spqeo19.02.183.

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Choi, Geun Su, Byunghyun Kang, Jinnil Choi, Byeong-Kwon Ju, and Young Wook Park. "Reduced Efficiency Roll-Off in Phosphorescent Organic Light-Emitting Diodes with a Double Dopant." Journal of Nanoscience and Nanotechnology 20, no. 11 (2020): 6679–82. http://dx.doi.org/10.1166/jnn.2020.18770.

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The phenomenon by which the efficiency decreases rapidly with the increase in luminance or current density in organic light-emitting diodes is termed efficiency roll-off. In particular, phosphorescent organic light-emitting diodes are known to have higher efficiency, but tend to exhibit higher efficiency roll-off compared with fluorescent organic light-emitting diodes. In this study, we report the efficiency roll-off characteristics of double-dopant phosphorescent organic light-emitting diodes. The double-dopant phosphorescent organic light-emitting diodes showed significantly lower efficiency

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14

Hofmann, Simone, Michael Thomschke, Björn Lüssem, and Karl Leo. "Top-emitting organic light-emitting diodes." Optics Express 19, S6 (2011): A1250. http://dx.doi.org/10.1364/oe.19.0a1250.

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15

Baigent, D. R., R. N. Marks, N. C. Greenham, R. H. Friend, S. C. Moratti, and A. B. Holmes. "Surface-emitting polymer light-emitting diodes." Synthetic Metals 71, no. 1-3 (1995): 2177–78. http://dx.doi.org/10.1016/0379-6779(94)03209-o.

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16

Jaafar, NI, A. Sulaiman, S. Moghavvemi, FP Tajudeen, and F. Dehdar. "Factors affecting the intention to adopt light-emitting diode lighting at home." Lighting Research & Technology 52, no. 8 (2020): 1020–39. http://dx.doi.org/10.1177/1477153520915964.

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This study investigates the significant factors affecting the adoption of light emitting diode lighting among households in Malaysia by conceptualizing and extending the unified theory of acceptance and use of technology through the adaptation of price value and the anticipated emotions of pride and guilt within the model. This study used the partial least squares technique to validate measurements and to test the research hypotheses. The results obtained from analysing 1075 valid survey questionnaires revealed the effects of performance expectancy, effort expectancy and price value on the int

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17

Krump, R., S. O. Ferreira, W. Faschinger, G. Brunthaler, and H. Sitter. "ZnMgSeTe Light Emitting Diodes." Materials Science Forum 182-184 (February 1995): 349–52. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.349.

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18

Behrman, Keith, and Ioannis Kymissis. "Micro light-emitting diodes." Nature Electronics 5, no. 9 (2022): 564–73. http://dx.doi.org/10.1038/s41928-022-00828-5.

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19

Zhao, Chenyang, Dezhong Zhang, and Chuanjiang Qin. "Perovskite Light-Emitting Diodes." CCS Chemistry 2, no. 4 (2020): 859–69. http://dx.doi.org/10.31635/ccschem.020.202000216.

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Faschinger, W., R. Krump, G. Brunthaler, S. Ferreira, and H. Sitter. "ZnMgSeTe light emitting diodes." Applied Physics Letters 65, no. 25 (1994): 3215–17. http://dx.doi.org/10.1063/1.112416.

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Dodabalapur, Ananth. "Organic light emitting diodes." Solid State Communications 102, no. 2-3 (1997): 259–67. http://dx.doi.org/10.1016/s0038-1098(96)00714-4.

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22

Mou, Sinthia Shabnam, Hiroshi Irie, Yasuhiro Asano, et al. "Superconducting Light-Emitting Diodes." IEEE Journal of Selected Topics in Quantum Electronics 21, no. 2 (2015): 1–11. http://dx.doi.org/10.1109/jstqe.2014.2346617.

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Ren, J., K. A. Bowers, B. Sneed, et al. "ZnSe light‐emitting diodes." Applied Physics Letters 57, no. 18 (1990): 1901–3. http://dx.doi.org/10.1063/1.104006.

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24

Mills, Alan. "Light Emitting Diodes 2004." III-Vs Review 17, no. 9 (2004): 22–24. http://dx.doi.org/10.1016/s0961-1290(04)00844-0.

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Kioseoglou, George, and Athos Petrou. "Spin Light Emitting Diodes." Journal of Low Temperature Physics 169, no. 5-6 (2012): 324–37. http://dx.doi.org/10.1007/s10909-012-0648-x.

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26

Tamulaitis, Gintautas. "Ultraviolet light emitting diodes." Lithuanian Journal of Physics 51, no. 3 (2011): 177–93. http://dx.doi.org/10.3952/lithjphys.51307.

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27

Sreedhar, K. V. S. "Light Emitting Diodes (LEDs)." IOSR Journal of Electronics and Communication Engineering 9, no. 2 (2014): 07–13. http://dx.doi.org/10.9790/2834-09270713.

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28

Adivarahan, V., W. H. Sun, A. Chitnis, et al. "250nmAlGaN light-emitting diodes." Applied Physics Letters 85, no. 12 (2004): 2175–77. http://dx.doi.org/10.1063/1.1796525.

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Mukai, T., S. Nagahama, N. Iwasa, M. Senoh, and T. Yamada. "Nitride light-emitting diodes." Journal of Physics: Condensed Matter 13, no. 32 (2001): 7089–98. http://dx.doi.org/10.1088/0953-8984/13/32/314.

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Suzuki, Hiroyuki, Satoshi Hoshino, Kazuaki Furukawa, Keisuke Ebata, Chien-Hua Yuan, and Ingo Bleyl. "Polysilane light-emitting diodes." Polymers for Advanced Technologies 11, no. 8-12 (2000): 460–67. http://dx.doi.org/10.1002/1099-1581(200008/12)11:8/12<460::aid-pat992>3.0.co;2-3.

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Greczmiel, Michael, Peter Pösch, Hans-Werner Schmidt, et al. "Polymer light emitting diodes." Macromolecular Symposia 102, no. 1 (1996): 371–80. http://dx.doi.org/10.1002/masy.19961020144.

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Kuttipillai, Padmanaban S., Yimu Zhao, Christopher J. Traverse, Richard J. Staples, Benjamin G. Levine, and Richard R. Lunt. "Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016)." Advanced Materials 28, no. 2 (2016): 319. http://dx.doi.org/10.1002/adma.201670012.

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Lee, Ryungyu, Keun-Yeong Choi, Hyukmin Kweon, et al. "P‐199: Silicone‐integrated Photolithography of Small‐molecule Phosphorescent Emitter for Ultrahigh‐resolution Micro‐OLEDs." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 2145–46. http://dx.doi.org/10.1002/sdtp.18030.

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In this paper, we propose an ultrahigh‐resolution organic light‐emitting diodes (OLEDs) pixels patterned by conventional photolithography through by incorporating silicone into phosphorescent small‐molecule networks. This silicone‐integrated phosphorescent organic light‐emitting diode (SI‐phOLED), in which silicone molecules are homogeneously crosslinked with small‐molecule light‐emitting materials, can effortlessly achieve to 3,000 PPI ultrahigh‐resolution patterns using the photolithography process.

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Janicki, Marcin, Tomasz Torzewicz, Przemysław Ptak, Tomasz Raszkowski, Agnieszka Samson, and Krzysztof Górecki. "Parametric Compact Thermal Models of Power LEDs." Energies 12, no. 9 (2019): 1724. http://dx.doi.org/10.3390/en12091724.

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Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is the main factor affecting the electrical and lighting parameters of these devices, thermal models are essential subcomponents of the multidomain models commonly used for simulation of their operation. The authors investigated white power light-emitting diodes soldered to Metal Core Printed Circuit Boards (MCPCBs). The tested devices were placed in a light-tight box on a cold plate and their cooling curves were registered for different diode heating current values and variou

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35

Kim, Taekyung, Kyung Hyung Lee, and Jun Yeob Lee. "Superb lifetime of blue organic light-emitting diodes through engineering interface carrier blocking layers and adjusting electron leakage and an unusual efficiency variation at low electric field." Journal of Materials Chemistry C 6, no. 31 (2018): 8472–78. http://dx.doi.org/10.1039/c8tc02286k.

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An extremely long lifetime blue organic light-emitting diode (OLED) was developed through managing the electron density and an S-shaped variation of efficiency in blue fluorescent organic light-emitting diodes (FOLEDs) using carrier blocking layers and systematically analyzed in conjunction with the efficiency–lifetime interrelationship.

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Горелик, В. С., А. Ю. Пятышев та Н. В. Сидоров. "Фотолюминесценция ниобата лития, легированного медью". Физика твердого тела 60, № 5 (2018): 904. http://dx.doi.org/10.21883/ftt.2018.05.45784.339.

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AbstractThe photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV–Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520–620 nm.

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Wang, Ming-Sheng, and Guo-Cong Guo. "Inorganic–organic hybrid white light phosphors." Chemical Communications 52, no. 90 (2016): 13194–204. http://dx.doi.org/10.1039/c6cc03184f.

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Cho, Jaehee, and Jong Kyu Kim. "Transfer or delivery of micro light-emitting diodes for light-emitting diode displays." AIP Advances 9, no. 10 (2019): 100901. http://dx.doi.org/10.1063/1.5118992.

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Itaya, Kazuhiko, Hideto Sugawara, and Gen-ichi Hatakoshi. "InGaAlP visible light laser diodes and light-emitting diodes." Journal of Crystal Growth 138, no. 1-4 (1994): 768–75. http://dx.doi.org/10.1016/0022-0248(94)90905-9.

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Islam, Amirul, Md Tanvir Hossan, and Yeong Min Jang. "Convolutional neural networkscheme–based optical camera communication system for intelligent Internet of vehicles." International Journal of Distributed Sensor Networks 14, no. 4 (2018): 155014771877015. http://dx.doi.org/10.1177/1550147718770153.

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The evolution of the Internet of vehicles and growing use of mobile devices has created a demand for new wireless communication technologies. Optical camera communication, which uses light-emitting diodes as transmitters and cameras as receivers, has emerged as a promising alternative. Since light-emitting diodes and cameras are already exploring in traffic lights, vehicles, and public lightings, optical camera communication has the potential to intelligently handle transport systems. Although other technologies have been proposed or developed in both academia and industry, they are not yet ma

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Liu, Huayan, Yongwei Wu, Miao Duan, Kai Cheng, and Mingshun Wang. "P‐143: Enhanced Carrier Transportation towards High Luminescent Light‐Emitting Diodes with Multi‐cation Perovskite." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 1939–40. http://dx.doi.org/10.1002/sdtp.17970.

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In this work, more conductive and lower work function PEDOT:PSS 1000 was used as hole transporting layer to fabricate high luminescent perovskite light‐emitting diodes. Combined with potassium doping strategy, the according MAxCs1‐xPbBr3 (0 <x <1)perovskite light‐emitting diode reaches a high brightness of65 000 cd/m2.

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Hande, Savithri, and Prajna K B. "Survey on Organic Light Emitting Diode." International Journal of Innovative Science and Research Technology 5, no. 6 (2020): 630–36. http://dx.doi.org/10.38124/ijisrt20jun492.

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Organic light emitting diodes is a new display technology, which uses organic thin materials that are placed between conductors. When an electric current is applied, a bright light is emitted. OLEDs are thin, transparent, flexible, foldable displays. In 1987 researchers of Eastman Kodak company invented OLED diode technology. The principal inventors were Chemists Ching W. Tang and Steven Van Slyke. In 2001 they received an Industrial Innovation Award from the American Chemical Society for their contribution in organic light emitting diodes. In 2003, Kodak realised its first OLED display had 51

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Bansal, Kanika, and Shouvik Datta. "Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study." MRS Proceedings 1635 (2014): 49–54. http://dx.doi.org/10.1557/opl.2014.206.

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ABSTRACTWe report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, b

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Sher, Chin-Wei, Kuo-Ju Chen, Hau-Vei Han, et al. "TuC-1-3 White Uniform Flexible Light-Emitting Diodes." Proceedings of JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment : IIP/ISPS joint MIPE 2015 (2015): _TuC—1–3–1. http://dx.doi.org/10.1299/jsmemipe.2015._tuc-1-3-1.

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Meiso YOKOYAMA, Meiso YOKOYAMA, LI Chi-Shing LI Chi-Shing, and SU Shui-hsiang SU Shui-hsiang. "Novel Field Emission Organic Light Emitting Diodes with Dynode." Chinese Journal of Luminescence 32, no. 1 (2011): 1–6. http://dx.doi.org/10.3788/fgxb20113201.0001b.

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Jang, Ho Seong, and Duk Young Jeon. "Yellow-emitting Sr3SiO5:Ce3+,Li+ phosphor for white-light-emitting diodes and yellow-light-emitting diodes." Applied Physics Letters 90, no. 4 (2007): 041906. http://dx.doi.org/10.1063/1.2432947.

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Li, Ning, Ying Suet Lau, Yanqin Miao, and Furong Zhu. "Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes." Nanophotonics 7, no. 12 (2018): 1981–88. http://dx.doi.org/10.1515/nanoph-2018-0149.

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AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescen

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Masui, Hisashi. "Diode ideality factor in modern light-emitting diodes." Semiconductor Science and Technology 26, no. 7 (2011): 075011. http://dx.doi.org/10.1088/0268-1242/26/7/075011.

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Романов, В. В., И. А. Белых, Э. В. Иванов, П. А. Алексеев, Н. Д. Ильинская та Ю. П. Яковлев. "Светодиоды на основе асимметричной двойной гетероструктуры InAs/InAsSb/InAsSbP для детектирования CO-=SUB=-2-=/SUB=- (λ=4.3 мкм) и CO (λ=4.7 мкм)". Физика и техника полупроводников 53, № 6 (2019): 832. http://dx.doi.org/10.21883/ftp.2019.06.47738.9051.

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Abstract (sommario):

Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor-phase epitaxy. Two types of light–emitting diodes (A and B) were created on basis of grown heterostructures with emission peak at 4.1 µm and 4.7 µm, respectively. The current–voltage and electroluminescent characteristics of light–emitting diodes are investigated at room temperature. When operating at 50 % duty cycle mode (frequency − 512 Hz) with a current of 250 mA, light–emitting diodes A and B produced the optical power of 24 μW and 15 μW, respectively. Under the pulse operation (frequency − 512 Hz, du

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Liu, Meng, Xuan Zheng, Wenfei Liu, et al. "Analysis of the Light-Extraction Efficiency of Flip-Chip Deep-Ultraviolet Light-Emitting Diodes with Embedded Photonic Crystals." Journal of Nanoelectronics and Optoelectronics 16, no. 4 (2021): 591–96. http://dx.doi.org/10.1166/jno.2021.2954.

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Abstract (sommario):

In the present study, embedded photonic crystals were introduced into the p-GaN contact layer of light-emitting diodes to increase the light-extraction efficiency of flip-chip deep-ultraviolet light-emitting diodes. As demonstrated by performing three-dimensional finite-difference time domain simulation, the embedded photonic crystals could be designed to increase the total reflectivity on the p-GaN contact layer, thereby increasing the light-extraction efficiency. In addition, the effects of the embedded photonic crystals configurations on the light-extraction efficiency of deep-ultraviolet l

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