Bibliografie tematiche / Microelectronic devices

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Letteratura scientifica selezionata sul tema "Microelectronic devices"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 25 luglio 2025

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Articoli di riviste sul tema "Microelectronic devices"

1

Brodie, I., and P. R. Schwoebel. "Vacuum microelectronic devices." Proceedings of the IEEE 82, no. 7 (1994): 1006–34. http://dx.doi.org/10.1109/5.293159.

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von Windheim, Tasso, Kristin H. Gilchrist, Charles B. Parker, et al. "Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters." Micromachines 14, no. 5 (2023): 973. http://dx.doi.org/10.3390/mi14050973.

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This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10−9 S as current saturation was not achieved due to a coupling effe
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Srivastava, V. "THz vacuum microelectronic devices." Journal of Physics: Conference Series 114 (May 1, 2008): 012015. http://dx.doi.org/10.1088/1742-6596/114/1/012015.

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Ren, Yanru, Min Zhu, Dongyu Xu, et al. "Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices." Science and Technology of Nuclear Installations 2024 (March 30, 2024): 1–17. http://dx.doi.org/10.1155/2024/3616902.

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With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation-induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation-hardening techniques. The ultimate goal is to bolster the r
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MANUSHIN, Dmitrii V., Guzel' R. TAISHEVA, and Shamil' I. ENIKEEV. "Russian microelectronics: Current state-of-the-art, logistics, management issues, crisis response measures." National Interests: Priorities and Security 19, no. 5 (2023): 808–42. http://dx.doi.org/10.24891/ni.19.5.808.

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Subject. This article discusses the prospects for the development of Russian microelectronics and import substitution issues. Objectives. The article aims to develop measures to support Russian developers of microelectronic devices. Methods. For the study, we used the abstract-logical, computational-constructive, and case study methods. Results. The article proposes certain measures to support the microelectronics industry in Russia. Conclusions. The proposed measures can help prevent a crisis in the microelectronics industry in the face of sanctions imposed against Russia.
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Chen, Yuan, and Xiao Wen Zhang. "Applications of Focused Ion Beam Technology in Bonding Failure Analysis for Microelectronic Devices." Applied Mechanics and Materials 58-60 (June 2011): 2171–76. http://dx.doi.org/10.4028/www.scientific.net/amm.58-60.2171.

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Focused ion beam (FIB) system is a powerful microfabrication tool which uses electronic lenses to focus the ion beam even up to nanometer level. The FIB technology has become one of the most necessary failure analysis and failure mechanism study tools for microelectronic device in the past several years. Bonding failure is one of the most common failure mechanisms for microelectronic devices. But because of the invisibility of the bonding interface, it is difficult to analyze this kind of failure. The paper introduced the basic principles of FIB technology. And two cases for microelectronic de
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Min, K. H., and J. Mardinly. "Electron Tomography of Microelectronic Devices." Microscopy and Microanalysis 9, S02 (2003): 502–3. http://dx.doi.org/10.1017/s1431927603442517.

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Ekpu, M., R. Bhatti, M. I. Okereke, and K. C. Otiaba. "Fatigue life analysis of Sn96.5Ag3.0Cu0.5 solder thermal interface material of a chip-heat sink assembly in microelectronic applications." International Symposium on Microelectronics 2013, no. 1 (2013): 000473–77. http://dx.doi.org/10.4071/isom-2013-wa23.

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The reliability of microelectronic devices during operation has been a major challenge in recent years. Microelectronics devices will fail if one or more components do not function properly. Thermal interface materials are more likely to fail because of the role they play in heat management. Lead free solders such as SAC305 solder (Sn96.5Ag3.0Cu0.5) have become the thermal materials of interest because of their high thermal conductivity and government legislations on the ban of lead. Ansys finite element software was used for the design and analysis of the microelectronic device studied. The b
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OSADCHUK, Iaroslav. "MICROELECTRONIC AUTOGENERATOR TEMPERATURE SENSORS." Herald of Khmelnytskyi National University. Technical sciences 317, no. 1 (2023): 237–47. http://dx.doi.org/10.31891/2307-5732-2023-317-1-237-247.

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Microelectronic autogenerator temperature sensors based on transistor structures with differential negative resistance with primary parametric thermosensitive elements based on bipolar and field-effect transistors are proposed, moreover, primary parametric thermosensitive elements are active components of the circuits of parametric autogenerator temperature sensors, which greatly simplifies the design of the device. Based on the consideration of physical processes in primary parametric temperature-sensitive components and autogenerators of temperature sensors, mathematical models of autogenera
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Криштоп, В. Г., Д. А. Жевненко, П. В. Дудкин та ін. "ТЕХНОЛОГИЯ И ПРИМЕНЕНИЕ ЭЛЕКТРОХИМИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЕЙ". NANOINDUSTRY Russia 96, № 3s (2020): 450–55. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.450.455.

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Электрохимические системы очень перспективны для разработки новой элементной базы для микроэлектроники и для использования в широком спектре инженерных задач. Мы разработали новую микроэлектронную технологию для изготовления электрохимических преобразователей (ЭХП) и новые приборы на основе новых электрохимических микроэлектронных чипов. Планарные электрохимические преобразователи могут использоваться в акселерометрах, сейсмических датчиках, датчиках вращения, гидрофонах и датчиках давления. Electrochemical systems are very promising for the development of a new element base for microelectroni
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Tesi sul tema "Microelectronic devices"

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Al-Amin, Chowdhury G. "Advanced Graphene Microelectronic Devices." FIU Digital Commons, 2016. http://digitalcommons.fiu.edu/etd/2512.

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The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap precludes its application in digital and logic devices. With its remarkably high electron mobility at room temperature, Graphene also has strong potential for terahertz (THz) plasmonic devices. However there still are challenges to be solved to realize Graphene’s full potential for practical applications. In this dissertation, we investigate solutions for some of these challenges. First, to reduce the access resistances which signif
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Burrows, Susan Elizabeth. "Silicone encapsulants for microelectronic devices." Thesis, University of Warwick, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319702.

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Solis, Adrian (Adrian Orbita). "MIT Device Simulation WebLab : an online simulator for microelectronic devices." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/33364.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2005.<br>Includes bibliographical references (p. 149-157).<br>In the field of microelectronics, a device simulator is an important engineering tool with tremendous educational value. With a device simulator, a student can examine the characteristics of a microelectronic device described by a particular model. This makes it easier to develop an intuition for the general behavior of that device and examine the impact of particular device parameters on device characteristics. In thi
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Ramon, i. Garcia Eloi. "Inkjet printed microelectronic devices and circuits." Doctoral thesis, Universitat Autònoma de Barcelona, 2014. http://hdl.handle.net/10803/285078.

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En els darrers anys ha anat creixent l’interès per la fabricació de sistemes de baix cost, flexibles i sobre gran àrea com, per exemple, les etiquetes RFID per a identificació de productes, les pantalles flexibles o les etiquetes intel•ligents entre d’altres. La tecnologia d’impressió electrònica (Printed Electronics) s’ha posicionat com una de les tecnologies alternatives de fabricació més prometedores pel fet de no utilitzar tècniques fotolitogràfiques i de buit. Alhora, la millora en materials orgànics i inorgànics ha provocat un increment en les prestacions dels dispositius impresos. Tot i
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Reska, Anna. "Interfacing insect neuronal neutworks with microelectronic devices." Jülich Forschungszentrum, Zentralbibliothek, 2009. http://d-nb.info/1000321983/34.

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Sanderson, Lisa. "Nanoscale strain characterisation of modern microelectronic devices." Thesis, University of Newcastle upon Tyne, 2012. http://hdl.handle.net/10443/1541.

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Sources of stress and strain in modern microelectronics can be either beneficial to the electrical performance or detrimental to the mechanical integrity and ultimately lifetime of the device. Strain engineering is commonplace in state-of-the-art device fabrication as a means to boost performance in the face of device scaling limitation. The strain present in the device is directly related to the improvement factor and as such precise measurements and good understanding are of utmost importance due to the many thermal processing steps that can induce or cause relaxation of the strain. Front-en
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Limpaphayom, Koranan. "Microelectronic circuits for noninvasive ear type assistive devices." College Park, Md.: University of Maryland, 2009. http://hdl.handle.net/1903/9887.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2009.<br>Thesis research directed by: Reliability Engineering Program. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices." Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five ex
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Heng, Stephen Fook-Geow. "Experimental and theoretical thermal analysis of microelectronic devices." Diss., Georgia Institute of Technology, 1988. http://hdl.handle.net/1853/16694.

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Thongpang, Sanitta. "Vacuum field emission microelectronic devices based on silicon nanowhiskers." Thesis, University of Canterbury. Electrical and Computer Engineering, 2007. http://hdl.handle.net/10092/1141.

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Vacuum field emission devices have become a promising candidate for emerging display technology due to their interesting properties compared to conventional thermionic emission devices that require high temperature and power to operate. Unlike thermionic emission, field emission devices can induce the electrons to emit at low temperature; sharp and thin emitters on the cathode are desired in order to increase the field emission. Many candidates from other research groups, such as Carbon Nanotubes (CNTs), SiC and ZnO, appear to have high field emission, but their complicated fabrication proces
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Libri sul tema "Microelectronic devices"

1

Leaver, K. D. Microelectronic devices. Longman Scientific & Technical, 1989.

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Yang, Edward S. Microelectronic devices. McGraw-Hill, 1988.

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Yang, Edward S. Microelectronic devices. McGraw-Hill, 1988.

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Fonstad, Clifton G. Microelectronic devices and circuits. McGraw-Hill, 1994.

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Horenstein, Mark N. Microelectronic circuits and devices. Prentice Hall, 1990.

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Fonstad, Clifton. Microelectronic devices and circuits. McGraw-Hill, 1994.

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Pulfrey, David L. Introduction to microelectronic devices. Prentice-Hall International, 1989.

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1956-, Tarr N. Garry, ed. Introduction to microelectronic devices. Prentice Hall, 1989.

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Arunachalam, V., and K. Sivasankaran, eds. Microelectronic Devices, Circuits and Systems. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5048-2.

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Manzione, Louis T. Plastic packaging of microelectronic devices. Van Nostrand Reinhold, 1990.

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Capitoli di libri sul tema "Microelectronic devices"

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Grisel, Alain. "Microelectronic Devices." In Handbook of Biosensors and Electronic Noses. CRC Press, 2024. http://dx.doi.org/10.1201/9781003575177-8.

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Gardner, Julian W., Vijay K. Varadan, and Osama O. Awadelkarim. "Standard Microelectronic Technologies." In Microsensors, MEMS, and Smart Devices. John Wiley & Sons, Ltd,., 2013. http://dx.doi.org/10.1002/9780470846087.ch4.

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Föll, H., and B. Wild. "Polysilicon Layers in Modern Microelectronic Devices." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_39.

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Wang, Biao. "Dielectric Breakdown of Microelectronic and Nanoelectronic Devices." In Advanced Topics in Science and Technology in China. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-33596-9_9.

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Lebedev, A. A., and V. E. Chelnokov. "Future Trends in SiC-Based Microelectronic Devices." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_33.

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Nair, Anju K., Paulose Thomas, Kala M. S, and Nandakumar Kalarikkal. "Carbon Nanotubes for Nanoelectronics and Microelectronic Devices." In Handbook of Carbon Nanotubes. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-91346-5_33.

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Nair, Anju K., Paulose Thomas, Kala M. S, and Nandakumar Kalarikkal. "Carbon Nanotubes for Nanoelectronics and Microelectronic Devices." In Handbook of Carbon Nanotubes. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-319-70614-6_33-1.

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Siah, L. F. "Moisture-Driven Electromigrative Degradation in Microelectronic Packages." In Moisture Sensitivity of Plastic Packages of IC Devices. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-5719-1_20.

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Ruybalid, A. P., J. P. M. Hoefnagels, O. van der Sluis, and M. G. D. Geers. "Full-Field Identification of Interfaces in Microelectronic Devices." In Micro and Nanomechanics, Volume 5. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-42228-2_2.

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Di Paolo Emilio, Maurizio. "Low-Power Solutions for Biomedical/Mobile Devices." In Microelectronic Circuit Design for Energy Harvesting Systems. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47587-5_10.

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Atti di convegni sul tema "Microelectronic devices"

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Bavarian, Bezad, Kim S. Plourde, and Mehrooz Zamanzaded. "Corrosion of Microelectronics Devices." In CORROSION 1996. NACE International, 1996. https://doi.org/10.5006/c1996-96628.

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Abstract Microelectronic devices are liable to failure due to different electrochemical processes. Corrosion, and electrodeposition often occur due to moisture adsorption and presence of a contaminant in the surrounding environment of these devices. The objective of this investigation was to characterize the effects of contaminants, moisture levels on growth of a dendrite-like structure which causing short between the interconnectors(copper alloy) in a electronic circuit. The dendrite growth rate was measured as function of cupric chloride, moisture levels, and applied potential across the con
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Sol, Jeroen, Marwan Aarab, Wilko van Grondelle, et al. "High-resolution additive manufacturing for 3D multifunctional microelectronic devices." In Emerging Digital Micromirror Device Based Systems and Applications XVII, edited by Benjamin L. Lee and Alex Lyubarsky. SPIE, 2025. https://doi.org/10.1117/12.3040844.

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Reiner, Lisa, and Behzad Bavarian. "Effects of a Space Environment on Electronic Equipment." In CORROSION 2002. NACE International, 2002. https://doi.org/10.5006/c2002-02145.

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Abstract The damaging effects of ionizing radiation on MOS technology have been extensively investigated for close to thirty years. These investigations have more mainstream relevance since this technology now serves as the fundamental component of modem microelectronic equipment. The increased demand for communication devices, has led to the deployment of more than 200 satellites into a space environment filled with ionizing atoms that can rearrange a material’s atomic structure. An understanding of the device physics affecting the performance of the microelectronics is crucial and necessitat
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Jiang, Chun-Sheng, Rouin Farshchi, Timothy Nagle, Dingyuan Lu, Gang Xiong, and Matthew O. Reese. "NM-Scale Characterization of Microelectronic Structure of Phosphorus-Doped CdSeTe Devices." In 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC). IEEE, 2024. http://dx.doi.org/10.1109/pvsc57443.2024.10748769.

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Ivchuk, Sergiy, Vasyl Kogut, and Volodymyr Karkulyovskyy. "The Microelectronic Devices Failure Diagnostics." In 2007 International Conference on Perspective Technologies and Methods in MEMS Design. IEEE, 2007. http://dx.doi.org/10.1109/memstech.2007.4283448.

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Brahma, Mettle, Neetu Kumari, Raju Bura, and Mulaka Maruthi. "Microelectronic Devices and Human Health." In 2022 International Conference on Smart and Sustainable Technologies in Energy and Power Sectors (SSTEPS). IEEE, 2022. http://dx.doi.org/10.1109/ssteps57475.2022.00089.

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Friend, R. H. "Conducting polymers in microelectronic devices." In IEE Colloquium on Conducting Polymers and Their Applications in Transducers and Instrumentation. IEE, 1996. http://dx.doi.org/10.1049/ic:19961288.

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Drouin, D., M. A-Bounouar, G. Droulers, et al. "3D microelectronic with BEOL compatible devices." In 2015 IEEE 33rd VLSI Test Symposium (VTS). IEEE, 2015. http://dx.doi.org/10.1109/vts.2015.7116262.

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Sverdlov, Viktor, Hans Kosina, and Siegfried Selberherr. "Current Flow in Upcoming Microelectronic Devices." In 2006 International Caribbean Conference on Devices, Circuits and Systems. IEEE, 2006. http://dx.doi.org/10.1109/iccdcs.2006.250826.

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Xu, Zheng, Ken Ngan, Jim VanGogh, et al. "Planar multilevel metallization technologies for ULSI devices." In Microelectronic Manufacturing, edited by Fusen E. Chen and Shyam P. Murarka. SPIE, 1994. http://dx.doi.org/10.1117/12.186046.

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Rapporti di organizzazioni sul tema "Microelectronic devices"

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Grunze, M. Properties and Adhesion of Polyimides in Microelectronic Devices. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada238204.

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Leung, M. S., and G. W. Stupian. Special Techniques for the Auger Analysis of Microelectronic Devices. Defense Technical Information Center, 1986. http://dx.doi.org/10.21236/ada171631.

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Vizkelethy, Gyorgy. Simulation of ion beam induced current in radiation detectors and microelectronic devices. Office of Scientific and Technical Information (OSTI), 2009. http://dx.doi.org/10.2172/974877.

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Bates, J. B., and E. Saaski. Development of a thin-film battery powered hazard card and other microelectronic devices. CRADA final report. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/10115282.

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Siegmund, Thomas H. Numerical Simulation and Experiments of Fatigue Crack Growth in Multi-Layer Structures of MEMS and Microelectronic Devices. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada464298.

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Harrison, Jr, and James W. Microelectronic Device Reliability. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada218774.

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Belenky, Gregory. Equipment for Optoelectronic and Microelectronic Deviceb Fabrication. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada389065.

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Guha, Supratik, H. S. Philip Wong, Jean Anne Incorvia, and Srabanti Chowdhury. Future Directions Workshop: Materials, Processes, and R&D Challenges in Microelectronics. Defense Technical Information Center, 2022. http://dx.doi.org/10.21236/ad1188476.

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Abstract (sommario):
Microelectronics is a complex field with ever-evolving technologies and business needs, fueled by decades of continued fundamental materials science and engineering advancement. Decades of dimensional scaling have led to the point where even the name microelectronics inadequately describes the field, as most modern devices operate on the nanometer scale. As we reach physical limits and seek more efficient ways for computing, research in new materials may offer alternative design approaches that involve much more than electron transport e.g. photonics, spintronics, topological materials, and a
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Pecht, Michael. The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada275029.

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Brosh, Arieh, David Robertshaw, Yoav Aharoni, Zvi Holzer, Mario Gutman, and Amichai Arieli. Estimation of Energy Expenditure of Free Living and Growing Domesticated Ruminants by Heart Rate Measurement. United States Department of Agriculture, 2002. http://dx.doi.org/10.32747/2002.7580685.bard.

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Research objectives were: 1) To study the effect of diet energy density, level of exercise, thermal conditions and reproductive state on cardiovascular function as it relates to oxygen (O2) mobilization. 2) To validate the use of heart rate (HR) to predict energy expenditure (EE) of ruminants, by measuring and calculating the energy balance components at different productive and reproductive states. 3) To validate the use of HR to identify changes in the metabolizable energy (ME) and ME intake (MEI) of grazing ruminants. Background: The development of an effective method for the measurement of
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