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Letteratura scientifica selezionata sul tema "SiGe SOLAR CELLS"

Autore: Grafiati

Pubblicato: 26 ottobre 2023

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Articoli di riviste sul tema "SiGe SOLAR CELLS"

1

Diaz, Martin, Li Wang, Dun Li, et al. "Tandem GaAsP/SiGe on Si solar cells." Solar Energy Materials and Solar Cells 143 (December 2015): 113–19. http://dx.doi.org/10.1016/j.solmat.2015.06.033.

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2

Zulkefle, Ahmad Aizan, Maslan Zainon, Zaihasraf Zakaria, et al. "A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation." Applied Mechanics and Materials 761 (May 2015): 341–46. http://dx.doi.org/10.4028/www.scientific.net/amm.761.341.

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This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better pe

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3

ACHOUR, M. B., B. DENNAI, and H. KHACHAB. "STUDY SIMULATION OF TOP-CELL ON THE PERFORMANCE OF AlxGa1- xAs/Si1-xGexTANDEM SOLAR CELL." Digest Journal of Nanomaterials and Biostructures 15, no. 2 (2020): 337–43. http://dx.doi.org/10.15251/djnb.2020.152.337.

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In this study, numerical optimization and analysis utilizing AMPS-1D software package of a simple model for tunnel junction (AlGaAs) between the top cell (AlGaAs) and bottom cell (SiGe) of cascade solar cells. The electrical properties and the photovoltaic performance parameters of AlGaAs/SiGe multijunction solar cells .The possible effects of base of the top cell layer thickness and doping level on solar cell performance parameters are addressed. The conversion efficiency of the solar cell has been found to increase significantly with the doping concentration in the range from 1015 to 1017 cm

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4

Soeriyadi, Anastasia H., Brianna Conrad, Xin Zhao, et al. "Increased Spectrum Utilization with GaAsP/SiGe Solar Cells Grown on Silicon Substrates." MRS Advances 1, no. 43 (2016): 2901–6. http://dx.doi.org/10.1557/adv.2016.354.

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ABSTRACTWorld-record solar-to-electricity energy conversion efficiency has been previously achieved by photovoltaic devices that maximize the use of the solar spectrum, such as multi-junction tandem solar cells. These cells are made of III-V materials whose high cost is a strong limitation on their widespread commercial application. One solution to suppress the cost of these types of devices is to grow III-V solar cells on low-cost carrier materials such as silicon. We will discuss the material, structure and analysis of GaAsP/SiGe-on-silicon multi-junction tandem solar cells. A low threading

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5

Hsieh, C. F., H. S. Wu, Teng Chun Wu, and M. H. Liao. "Periodic Nanostructured Thin-Film Solar Cells." Advanced Materials Research 860-863 (December 2013): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.860-863.114.

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Si-based photonic crystal device such as solar cells have been developed and attract lots of attention. Whether what kind of different structures are used, two key problems are needed to investigate. One is the improvement of the optic-electric (or electric-optic) transformation efficiency. Another is the capability to modulate the light-emitting and detection wavelength for various industrial applications. The wavelength of the light emission and detection can also be further adjusted by changing the material band-gap. In this work, we develop the periodic nanoscale surface textured solar cel

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6

Zhang, Qiu Bo, Wen Sheng Wei, and Feng Shan. "Analysis on micro-/poly-Crystalline SiGe Alloy Solar Cells." Advanced Materials Research 690-693 (May 2013): 2872–80. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.2872.

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Performance of micro-/poly-crystalline SiGe alloy solar cell of TCO/(n)a-Si:H/(i)a-Si/(p) c(pc)-SiGe/(p+)μc-Si/Al structure was analyzed via the AFORS-HET software. Cell structures can be designed to reach up to the optimal performance. Employment of back surface electric field layer of (p+)μc-Si could improve cell properties. The maximum photoelectric conversion efficiency η=21.48% occurs in a cell with average Ge percent content x0.1 and 250 m-thick Si1-xGex alloy light absorption layer, which is higher than the experimental result of the same absorption layer thickness crystalline Si HIT ce

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7

Caño, Pablo, Manuel Hinojosa, Iván García, et al. "GaAsP/SiGe tandem solar cells on porous Si substrates." Solar Energy 230 (December 2021): 925–34. http://dx.doi.org/10.1016/j.solener.2021.10.075.

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8

Safi, M., A. Aissat, H. Guesmi, and J. P. Vilcot. "SiGe quantum wells implementation in Si based nanowires for solar cells applications." Digest Journal of Nanomaterials and Biostructures 18, no. 1 (2023): 327–42. http://dx.doi.org/10.15251/djnb.2023.181.327.

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This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.

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9

Daami, A., A. Zerrai, J. J. Marchand, J. Poortmans, and G. Brémond. "Electrical defect study in thin-film SiGe/Si solar cells." Materials Science in Semiconductor Processing 4, no. 1-3 (2001): 331–34. http://dx.doi.org/10.1016/s1369-8001(00)00101-3.

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10

Eisele, C., M. Berger, M. Nerding, H. P. Strunk, C. E. Nebel, and M. Stutzmann. "Laser-crystallized microcrystalline SiGe alloys for thin film solar cells." Thin Solid Films 427, no. 1-2 (2003): 176–80. http://dx.doi.org/10.1016/s0040-6090(02)01216-6.

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