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Articoli di riviste sul tema "SiGe SOLAR CELLS"

Autore: Grafiati

Pubblicato: 26 ottobre 2023

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1

Diaz, Martin, Li Wang, Dun Li, et al. "Tandem GaAsP/SiGe on Si solar cells." Solar Energy Materials and Solar Cells 143 (December 2015): 113–19. http://dx.doi.org/10.1016/j.solmat.2015.06.033.

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2

Zulkefle, Ahmad Aizan, Maslan Zainon, Zaihasraf Zakaria, et al. "A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation." Applied Mechanics and Materials 761 (May 2015): 341–46. http://dx.doi.org/10.4028/www.scientific.net/amm.761.341.

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This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better pe

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3

ACHOUR, M. B., B. DENNAI, and H. KHACHAB. "STUDY SIMULATION OF TOP-CELL ON THE PERFORMANCE OF AlxGa1- xAs/Si1-xGexTANDEM SOLAR CELL." Digest Journal of Nanomaterials and Biostructures 15, no. 2 (2020): 337–43. http://dx.doi.org/10.15251/djnb.2020.152.337.

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In this study, numerical optimization and analysis utilizing AMPS-1D software package of a simple model for tunnel junction (AlGaAs) between the top cell (AlGaAs) and bottom cell (SiGe) of cascade solar cells. The electrical properties and the photovoltaic performance parameters of AlGaAs/SiGe multijunction solar cells .The possible effects of base of the top cell layer thickness and doping level on solar cell performance parameters are addressed. The conversion efficiency of the solar cell has been found to increase significantly with the doping concentration in the range from 1015 to 1017 cm

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4

Soeriyadi, Anastasia H., Brianna Conrad, Xin Zhao, et al. "Increased Spectrum Utilization with GaAsP/SiGe Solar Cells Grown on Silicon Substrates." MRS Advances 1, no. 43 (2016): 2901–6. http://dx.doi.org/10.1557/adv.2016.354.

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ABSTRACTWorld-record solar-to-electricity energy conversion efficiency has been previously achieved by photovoltaic devices that maximize the use of the solar spectrum, such as multi-junction tandem solar cells. These cells are made of III-V materials whose high cost is a strong limitation on their widespread commercial application. One solution to suppress the cost of these types of devices is to grow III-V solar cells on low-cost carrier materials such as silicon. We will discuss the material, structure and analysis of GaAsP/SiGe-on-silicon multi-junction tandem solar cells. A low threading

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5

Hsieh, C. F., H. S. Wu, Teng Chun Wu, and M. H. Liao. "Periodic Nanostructured Thin-Film Solar Cells." Advanced Materials Research 860-863 (December 2013): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.860-863.114.

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Si-based photonic crystal device such as solar cells have been developed and attract lots of attention. Whether what kind of different structures are used, two key problems are needed to investigate. One is the improvement of the optic-electric (or electric-optic) transformation efficiency. Another is the capability to modulate the light-emitting and detection wavelength for various industrial applications. The wavelength of the light emission and detection can also be further adjusted by changing the material band-gap. In this work, we develop the periodic nanoscale surface textured solar cel

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6

Zhang, Qiu Bo, Wen Sheng Wei, and Feng Shan. "Analysis on micro-/poly-Crystalline SiGe Alloy Solar Cells." Advanced Materials Research 690-693 (May 2013): 2872–80. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.2872.

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Performance of micro-/poly-crystalline SiGe alloy solar cell of TCO/(n)a-Si:H/(i)a-Si/(p) c(pc)-SiGe/(p+)μc-Si/Al structure was analyzed via the AFORS-HET software. Cell structures can be designed to reach up to the optimal performance. Employment of back surface electric field layer of (p+)μc-Si could improve cell properties. The maximum photoelectric conversion efficiency η=21.48% occurs in a cell with average Ge percent content x0.1 and 250 m-thick Si1-xGex alloy light absorption layer, which is higher than the experimental result of the same absorption layer thickness crystalline Si HIT ce

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7

Caño, Pablo, Manuel Hinojosa, Iván García, et al. "GaAsP/SiGe tandem solar cells on porous Si substrates." Solar Energy 230 (December 2021): 925–34. http://dx.doi.org/10.1016/j.solener.2021.10.075.

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8

Safi, M., A. Aissat, H. Guesmi, and J. P. Vilcot. "SiGe quantum wells implementation in Si based nanowires for solar cells applications." Digest Journal of Nanomaterials and Biostructures 18, no. 1 (2023): 327–42. http://dx.doi.org/10.15251/djnb.2023.181.327.

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This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.

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9

Daami, A., A. Zerrai, J. J. Marchand, J. Poortmans, and G. Brémond. "Electrical defect study in thin-film SiGe/Si solar cells." Materials Science in Semiconductor Processing 4, no. 1-3 (2001): 331–34. http://dx.doi.org/10.1016/s1369-8001(00)00101-3.

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10

Eisele, C., M. Berger, M. Nerding, H. P. Strunk, C. E. Nebel, and M. Stutzmann. "Laser-crystallized microcrystalline SiGe alloys for thin film solar cells." Thin Solid Films 427, no. 1-2 (2003): 176–80. http://dx.doi.org/10.1016/s0040-6090(02)01216-6.

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11

Maydell, K. V., K. Grunewald, M. Kellermann, et al. "Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells." Energy Procedia 44 (2014): 209–15. http://dx.doi.org/10.1016/j.egypro.2013.12.029.

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12

Fujiwara, Kozo, Wugen Pan, Noritaka Usami, et al. "Structural properties of directionally grown polycrystalline SiGe for solar cells." Journal of Crystal Growth 275, no. 3-4 (2005): 467–73. http://dx.doi.org/10.1016/j.jcrysgro.2004.12.023.

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13

Riaz, Muhammad, S. K. Earles, Ahmed Kadhim, and Ahmad Azzahrani. "Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE." International Journal of Computational Materials Science and Engineering 06, no. 03 (2017): 1750017. http://dx.doi.org/10.1142/s2047684117500178.

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The computer analysis of tandem solar cell, c-Si/a-Si:H/[Formula: see text]c-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12[Formula: see text]eV, 1.50[Formula: see text]eV and 1.70[Formula: see text]eV, respectively. First, single junction solar cell with both a-Si and [Formula: see text]c-SiGe absorbin

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14

Haku, Hisao, Katsunobu Sayama, Eiji Maruyama, et al. "High-Performance a-SiGe Solar Cells Using a Super Chamber Method." Japanese Journal of Applied Physics 30, Part 1, No. 11A (1991): 2700–2704. http://dx.doi.org/10.1143/jjap.30.2700.

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15

Sato, Shin-ichiro, Kevin Beernink, and Takeshi Ohshima. "Degradation Behavior of Flexible a-Si/a-SiGe/a-SiGe Triple-Junction Solar Cells Irradiated With Protons." IEEE Journal of Photovoltaics 3, no. 4 (2013): 1415–22. http://dx.doi.org/10.1109/jphotov.2013.2271672.

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16

AZEDDINE, B., A. TALHI, and K. HAMI. "PERFORMANCE OF SIGE SOLAR CELL WITH BSF LAYER EFFECT OF TEMPERATURE AND WINDOW LAYER." Journal of Ovonic Research 16, no. 3 (2020): 147–50. http://dx.doi.org/10.15251/jor.2020.163.147.

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The Silicon-Germanium (SiGe) technology, whose preliminary developments date from the mid-1980s and whose arrival on the market is recent, meets this joint need for economy and performance. In our days solar cells to thin films are increasingly used primarily because of their low cost. In recent decades the performance of these cells were significantly improved. In this work, we studied the temperature effect on performance forSiGe solar cell with BSF layer using software AMPS-1D to analyze some parameters. The temperature is one of most important effect and it plays a key on performance of so

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17

Wang, Li, Martin Diaz, Brianna Conrad, et al. "Material and Device Improvement of GaAsP Top Solar Cells for GaAsP/SiGe Tandem Solar Cells Grown on Si Substrates." IEEE Journal of Photovoltaics 5, no. 6 (2015): 1800–1804. http://dx.doi.org/10.1109/jphotov.2015.2459918.

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18

Xu, Xixiang, Jinyan Zhang, Anhong Hu, et al. "Development of Nanocrystalline Silicon Based Multi-junction Solar Cell Technology for High Volume Manufacturing." MRS Proceedings 1536 (2013): 57–62. http://dx.doi.org/10.1557/opl.2013.738.

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ABSTRACTWe conduct a comparative study mainly on two types of nc-Si based solar cell structures, a-Si/a-SiGe/nc-Si triple-junction and a-Si/nc-Si double-junction. We have attained comparable initial efficiency for the both solar cell structures, 10.8∼11.8% initial total area efficiency (85 - 95W over an area of 0.79 m2). For better compatibility to our installed manufacturing equipment, we deposit a-Si and a-SiGe component cells with the existing deposition machines. Only nc-Si bottom component cells are prepared in separate deposition machines tailored for nc-Si process. Material properties o

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19

Fan, Qi Hua, Xianbo Liao, Xianbi Xiang, et al. "Simulation of a-Si/a-SiGe thin film tandem junction solar cells." Journal of Physics D: Applied Physics 43, no. 14 (2010): 145101. http://dx.doi.org/10.1088/0022-3727/43/14/145101.

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20

Faucher, J., A. Gerger, S. Tomasulo, et al. "Single-junction GaAsP solar cells grown on SiGe graded buffers on Si." Applied Physics Letters 103, no. 19 (2013): 191901. http://dx.doi.org/10.1063/1.4828879.

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21

Okamoto, Shingo, Eiji Maruyama, Akira Terakawa, et al. "Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells." Solar Energy Materials and Solar Cells 66, no. 1-4 (2001): 85–94. http://dx.doi.org/10.1016/s0927-0248(00)00161-6.

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22

Aissat, A., F. Benyettou, S. Nacer, and J. P. Vilcot. "Modeling and simulation of solar cells quantum well based on SiGe/Si." International Journal of Hydrogen Energy 42, no. 13 (2017): 8790–94. http://dx.doi.org/10.1016/j.ijhydene.2016.07.042.

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23

Bidiville, A., T. Matsui, and M. Kondo. "Effect of oxygen doping in microcrystalline SiGe p-i-n solar cells." Journal of Applied Physics 116, no. 5 (2014): 053701. http://dx.doi.org/10.1063/1.4891684.

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24

Wang, Jin, Ke Tao, and Guo Feng Li. "Heteroepitaxial Growth of Ge-Rich SiGe Films on Si for Solar Cells." Advanced Materials Research 1014 (July 2014): 216–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1014.216.

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Germanium-rich silicon-germanium (Si1-xGex: 0.98≤x≤1) films were epitaxially grown on Si (001) substrate by reactive thermal chemical vapor deposition at low temperature. Si2H6and GeF4were used as source gases. The effect of gas flow ratio between Si2H6and GeF4was studied to optimize the film quality. The results indicated that Si1-xGex(x≥0.99) epilayer can be prepared directly on Si wafer at 350°C with a threading dislocation density of ~7×105/cm2and surface RMS roughness of 1.0 nm. Hall-effect and conductivity measurements revealed that the epilayer was p-type conduction with the hall mobili

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25

Zhong, Yan Kai, Sze Ming Fu, Sheng Lun Yan, Po Yu Chen, and Albert Lin. "Arbitrarily-Wide-Band Dielectric Mirrors and Their Applications to SiGe Solar Cells." IEEE Photonics Journal 7, no. 4 (2015): 1–12. http://dx.doi.org/10.1109/jphot.2015.2452771.

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26

Terakawa, Akira, Masao Isomura, and Shinya Tsuda. "Effect of optical gap on the stability of a-SiGe solar cells." Journal of Non-Crystalline Solids 198-200 (May 1996): 1097–100. http://dx.doi.org/10.1016/0022-3093(96)00053-1.

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27

Kosarian, Abdolnabi, and Peyman Jelodarian. "Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-Si:H/SiGe Heterostructure." ISRN Renewable Energy 2011 (December 11, 2011): 1–8. http://dx.doi.org/10.5402/2011/712872.

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In amorphous thin-film p-i-n solar cell, a thick absorber layer can absorb more light to generate carriers. On the other hand, a thin i-layer cannot absorb enough light. Thickness of the i-layer is a key parameter that can limit the performance of solar cell. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage, due to the modulation of material band-gap and the formation of a heterostructure. This work presents a novel nu

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28

Said, K., J. Poortmans, M. Caymax, et al. "Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells." IEEE Transactions on Electron Devices 46, no. 10 (1999): 2103–10. http://dx.doi.org/10.1109/16.792004.

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29

Ohdaira, Keisuke, Noritaka Usami, Wugen Pan, Kozo Fujiwara, and Kazuo Nakajima. "Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe." Japanese Journal of Applied Physics 44, no. 11 (2005): 8019–22. http://dx.doi.org/10.1143/jjap.44.8019.

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30

Cariou, R., J. Tang, N. Ramay, R. Ruggeri, and P. Roca i Cabarrocas. "Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells." Solar Energy Materials and Solar Cells 134 (March 2015): 15–21. http://dx.doi.org/10.1016/j.solmat.2014.11.018.

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31

Chen, Yu-Hung, Jun-Chin Liu, Yu-Ru Chen, et al. "Enhancing performance of amorphous SiGe single junction solar cells by post-deposition thermal annealing." Thin Solid Films 529 (February 2013): 7–9. http://dx.doi.org/10.1016/j.tsf.2012.06.019.

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32

Usami, Noritaka, Wugen Pan, Kozo Fujiwara, Misumi Tayanagi, Keisuke Ohdaira, and Kazuo Nakajima. "Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells." Solar Energy Materials and Solar Cells 91, no. 2-3 (2007): 123–28. http://dx.doi.org/10.1016/j.solmat.2006.07.006.

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33

Caño, Pablo, Manuel Hinojosa, Huy Nguyen, et al. "Hybrid III-V/SiGe solar cells grown on Si substrates through reverse graded buffers." Solar Energy Materials and Solar Cells 205 (February 2020): 110246. http://dx.doi.org/10.1016/j.solmat.2019.110246.

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34

Xu, Zhongyang, Xuecheng Zou, Xuemei Zhou, Bofang Zhao, Changan Wang, and Y. Hamakawa. "Optimum design and preparation ofa‐Si/a‐Si/a‐SiGe triple‐junction solar cells." Journal of Applied Physics 75, no. 1 (1994): 588–95. http://dx.doi.org/10.1063/1.357011.

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35

Ringel, S. A., J. A. Carlin, C. L. Andre, et al. "Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers." Progress in Photovoltaics: Research and Applications 10, no. 6 (2002): 417–26. http://dx.doi.org/10.1002/pip.448.

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36

Jelodarian, Peyman, and Abdolnabi Kosarian. "Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/946024.

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The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:

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37

Nakajima, Kazuo, Noritaka Usami, Kozo Fujiwara, et al. "Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells." Solar Energy Materials and Solar Cells 73, no. 3 (2002): 305–20. http://dx.doi.org/10.1016/s0927-0248(01)00216-1.

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38

Rault, Francis K., and Ahmad Zahedi. "Computational modelling of the reflectivity of AlGaAs/GaAs and SiGe/Si quantum well solar cells." Solar Energy Materials and Solar Cells 79, no. 4 (2003): 471–84. http://dx.doi.org/10.1016/s0927-0248(03)00050-3.

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39

XU, Z., X. ZOU, X. ZHOU, B. ZHAO, C. WANG, and Y. HAMAKAWA. "The optimum design for high efficiency a-Si/a-Si/a-SiGe tandem solar cells." Solar Energy Materials and Solar Cells 31, no. 2 (1993): 307–15. http://dx.doi.org/10.1016/0927-0248(93)90062-8.

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40

Gu, Long, Hui Dong Yang, and Bo Huang. "The Effect of Plasma Power on the Properties of Amorphous Silicon-Germanium Thin Films." Advanced Materials Research 317-319 (August 2011): 341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.341.

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Amorphous Silicon-germanium films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on glass substrates. The structural characteristics, deposition rate, photosensitivity, and optical band gap of the silicon-germanium thin films were investigated with plasma power varying from 15W to 45W. The deposition rate increased within a certain range of plasma power. With the plasma power increasing, the photosensitivity of the thin films decreased. It is evident that varying the plasma power changes the deposition rate, photosensitivity, which was fundamentally cruci

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41

Yu, Shu-Hung, Wei Lin, Yu-Hung Chen та Chun-Yen Chang. "High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers". International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/817825.

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42

Usami, Noritaka, Kozo Fujiwara, Wugen Pan, and Kazuo Nakajima. "On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution." Japanese Journal of Applied Physics 44, no. 2 (2005): 857–60. http://dx.doi.org/10.1143/jjap.44.857.

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43

Yue, Guozhen, Xunming Deng, G. Ganguly, and Daxing Han. "Electro- and photo-luminescence spectra from a-Si:H and a-SiGe p–i–n solar cells." Journal of Non-Crystalline Solids 266-269 (May 2000): 1119–23. http://dx.doi.org/10.1016/s0022-3093(99)00914-x.

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44

Pan, Wugen, Kozo Fujiwara, Noritaka Usami, Toru Ujihara, Kazuo Nakajima, and Ryuichi Shimokawa. "Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution." Journal of Applied Physics 96, no. 2 (2004): 1238–41. http://dx.doi.org/10.1063/1.1763227.

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45

Liou, J. J. "Physical models for predicting the performance of Si/Si, AlGaAs/GaAs, and Si/SiGe solar cells." Solar Energy Materials and Solar Cells 29, no. 3 (1993): 261–76. http://dx.doi.org/10.1016/0927-0248(93)90041-z.

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46

Hegedus, Steven S. "Current–Voltage Analysis of a-Si and a-SiGe Solar Cells Including Voltage-dependent Photocurrent Collection." Progress in Photovoltaics: Research and Applications 5, no. 3 (1997): 151–68. http://dx.doi.org/10.1002/(sici)1099-159x(199705/06)5:3<151::aid-pip167>3.0.co;2-w.

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47

BELHADJ, M., and B. DENNAI. "STUDY OF A SOLAR CELL WITH A MULTILAYERED WINDOW BASED ON Si1-xGex USING AMPS-1D." Journal of Ovonic Research 16, no. 3 (2020): 151–57. http://dx.doi.org/10.15251/jor.2020.163.151.

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Abstract (sommario):

The Silicon-Germanium (SiGe) technology, whose preliminary developments date from the mid-1980s and whose arrival on the market is recent, meets this joint need for economy and performance. In our days solar cells to thin films are increasingly used primarily because of their low cost. In recent decades the performance of these cells were significantly improved. In this work, we simulate solar cell base Si (1-x) Ge (X) multilayer window using software (AMPS-1D) to analyze some parameters. In particular, the properties of the window layer (thickness, doping, etc.) play a key role in the perform

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48

Ali, Khuram, and Zohaib Ali. "Analytical study of electrical performance of SiGe-based n-p-p solar cells with BaSi2 BSF structure." Solar Energy 225 (September 2021): 91–96. http://dx.doi.org/10.1016/j.solener.2021.07.027.

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49

Baidakova, N. A., V. A. Verbus, E. E. Morozova, et al. "Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells." Semiconductors 51, no. 12 (2017): 1542–46. http://dx.doi.org/10.1134/s1063782617120028.

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50

Lueck, M. R., C. L. Andre, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, and S. A. Ringel. "Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage." IEEE Electron Device Letters 27, no. 3 (2006): 142–44. http://dx.doi.org/10.1109/led.2006.870250.

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