Bibliografie tematiche / Transistors

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Letteratura scientifica selezionata sul tema "Transistors"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 25 luglio 2025

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Articoli di riviste sul tema "Transistors"

1

Vukic, Vladimir, and Predrag Osmokrovic. "Power lateral pnp transistor operating with high current density in irradiated voltage regulator." Nuclear Technology and Radiation Protection 28, no. 2 (2013): 146–57. http://dx.doi.org/10.2298/ntrp1302146v.

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The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-curr
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2

Knyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka, and A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89." Journal of Physics: Conference Series 2086, no. 1 (2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.

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Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.
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3

Horng. "Thin Film Transistor." Crystals 9, no. 8 (2019): 415. http://dx.doi.org/10.3390/cryst9080415.

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The special issue is "Thin Film Transistor". There are eight contributed papers. They focus on organic thin film transistors, fluorinated oligothiophenes transistors, surface treated or hydrogen effect on oxide-semiconductor-based thin film transistors, and their corresponding application in flat panel displays and optical detecting. The present special issue on “Thin Film Transistor” can be considered as a status report reviewing the progress that has been made recently on thin film transistor technology. These papers can provide the readers with more research information and corresponding ap
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Wang, Yaoli. "Research On Structural Design and Performance Optimization of Diamond Transistors." Transactions on Computer Science and Intelligent Systems Research 7 (November 25, 2024): 1–7. https://doi.org/10.62051/w3wnpd51.

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With the increasing demand for transistors that work in high-power, high-frequency, and high-voltage environments, diamond transistors are set to become an indispensable part of future transistor development. This article reviews the development history of hydrogen-terminated diamond transistors and silicon-terminated diamond transistors. Specifically, this article summarizes the invention of hydrogen-terminated and silicon-terminated diamond transistors, along with recent structural innovations and data analysis. From the recent findings on hydrogen-terminal diamond transistors, this paper fi
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5

Gardashbekova, Nailya Adem, and Sadi Gachay Zeynalov. "METAL-DIELECTRIC-SEMICONDUCTOR TRANSISTORS IN INTEGRAL CIRCUITS." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 98 (February 22, 2025): 67–69. https://doi.org/10.5281/zenodo.14911007.

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Induced n-type channel MDY-transistors are widely used in the development of microcircuits. Induced nand p-type channel transistors are mainly used in complementary MDY-microcircuits. Of the n- and p-type channel transistors with the same structure, the n-type channel transistor has a higher frequency and larger curvature characteristic than the p-type channel transistor, making it superior to the p-type channel transistor. This advantage is explained by the fact that the mobility of electrons in the crystal is greater than that of holes. MDY-transistors differ from bipolar transistors in
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BLALOCK, BENJAMIN J., SORIN CRISTOLOVEANU, BRIAN M. DUFRENE, F. ALLIBERT, and MOHAMMAD M. MOJARRADI. "THE MULTIPLE-GATE MOS-JFET TRANSISTOR." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 511–20. http://dx.doi.org/10.1142/s0129156402001423.

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A new SOI device, the MOS-JFET, has been developed that combines two different transistors, JFET and MOSFET, superimposed in a single silicon island so that they share the same body. A unique attribute of the MOS-JFET is that it can be viewed as a four gate transistor (two side junction-based gates, the top MOS gate, and the back gate activated by SOI substrate biasing). Each of these four gates can control the conduction characteristics of the transistor. This novel transistor's multiple gate inputs give rise to exciting circuit opportunities for analog, RF, mixed-signal, and digital applicat
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Arunabala, Dr C. "Design of a 4 bit Arithmetic and Logical unit with Low Power and High Speed." International Journal of Innovative Technology and Exploring Engineering 10, no. 5 (2021): 87–92. http://dx.doi.org/10.35940/ijitee.e8660.0310521.

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In this presented work we designed the 4- bit Arithmetic & Logical Unit (ALU) by using the different modules. The Various modules are AND gate & OR gate designed with six transistors, While the XOR modules is designed with both eight transistors & six transistors. The six transistor XOR module gives optimized results. Another one is the four by one multiplexer designed with eight transistors implemented using Pass transistor logic (PTL) style. The full adder module is designed by using 18 transistors implemented through PTL style. Here because of PTL style the number of transistor
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Dr.C.Arunabala*, Ch.Jyothirmayi, N. S. V. Sreeja.T D, Burra Hrithika Suma, Udumula Reddy, and I.R.AnushaDevi. "Design of a 4 bit Arithmetic and Logical unit with Low Power and High Speed." International Journal of Innovative Technology and Exploring Engineering (IJITEE) 10, no. 5 (2021): 87–92. https://doi.org/10.35940/ijitee.E8660.0310521.

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In this presented work we designed the 4- bit Arithmetic & Logical Unit (ALU) by using the different modules. The Various modules are AND gate & OR gate designed with six transistors, While the XOR modules is designed with both eight transistors & six transistors. The six transistor XOR module gives optimized results. Another one is the four by one multiplexer designed with eight transistors implemented using Pass transistor logic (PTL) style. The full adder module is designed by using 18 transistors implemented through PTL style. Here because of PTL style the number of transistor
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Fadil, Dalal, Wlodek Strupinski, Emiliano Pallecchi, and Henri Happy. "Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC." Materials 17, no. 14 (2024): 3553. http://dx.doi.org/10.3390/ma17143553.

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Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (fmax) and cut-off frequency (ft) of hundred transistors. The Raman spectra analysis provides insights into material property, which
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Yarmukhamedov, A., A. Zhabborov, and B. Turimbetov. "EXPERIMENTAL RESEARCH AND COMPUTER SIMULATION OF MULTI-CASCADE COMPOSITE TRANSISTORS FOR STABILIZING THE OPERATING MODE OF OUTPUT CASCADES OF RADIO ENGINEERING DEVICES." Technical science and innovation 2019, no. 1 (2019): 33–42. http://dx.doi.org/10.51346/tstu-01.18.2.-77-0009.

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Experimental results and computer simulation of multi-stage composite transistors are presented. To study the volt - ampere characteristics of multistage composite transistors, a dialogue computer simulation program, the Delphi programming environment, has been developed. It is shown that the proposed multistage composite transistors can improve manufacturability in its industrial production. It is shown that multistage homostructure transistors according to the Darlington and Shiklai circuits operate stably at collector-emitter voltages five times higher than in the case of individual transis
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Tesi sul tema "Transistors"

1

Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. An
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Cerutti, Robin. "Transistors à grilles multiples adaptés à la conception." Grenoble INPG, 2006. http://www.theses.fr/2006INPG0174.

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"En technologie MOS sur silicium, les transistors de type "double grille" (DG) sont considérés comme les meilleurs candidats pour les nœuds technologiques 32 et 22 nm de ITRS. Avec l'apparition de différentes architectures (FINFET, TriGate, Planar DG,. . . ) il est important de concevoir une intégration simple et compatible avec les requêtes circuit. Ce travail de thèse prend en compte les intéractions entre la conception et la technologie afin de définir des technologies tridimensionelles basées sur le module SON ("Silicon On Nothing"). De nouveaux transistors ont été inventés et développés e
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Lee, Yi-Che. "Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53472.

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The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave and quasi-static I-V and C-V measurements were carried out to characterize the fabricated III-N transistors and diodes. The GaN/InGaN direct-growth HBTs (DG-HBTs) grown on free-standing GaN (FS-GaN) substrates demonstrated a high current gain (hfe) > 110, high current density (JC) > 141 kA/cm2, and high power density (Pdc) > 3 MW/cm2. The fir
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Ozório, Maíza da Silva. "Estudo de compósitos de tips-pentaceno para aplicações em transistores /." Presidente Prudente, 2016. http://hdl.handle.net/11449/152818.

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Orientador: Neri Alves<br>Banca: Edson Laureto<br>Banca: Carlos José Leopoldo Constantino<br>Resumo: Um dos atuais desafios da eletrônica orgânica é a obtenção de semicondutores com alta mobilidade que forme filmes com boa morfologia quando depositado/impresso por solução, resultando em boa uniformidade e reprodutibilidade dos dispositivos. O poli(3- hexiltiofeno) (P3HT) e o 6,13-(triisopropilsililetinil)pentaceno (TP) estão entre os semicondutores orgânicos mais utilizados. O TP tem como característica a formação de estruturas cristalinas, e desse modo, apresenta mobilidade muito maior que o
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Ricci, Simona. "Liquid-gated transistors for biosensing applications." Doctoral thesis, Universitat Autònoma de Barcelona, 2020. http://hdl.handle.net/10803/670786.

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En aquesta tesi, hem estudiat diferents aspectes relacionats amb transistors orgànics, en particular transistors orgànics electroquímics d’efecte de camp (EGOFETs) i transistors orgànics electroquímics (OECTs). Els dispositius EGOFET es van fabricar dipositant a partir de dissolucions de semiconductors orgànics (OSC) basats en molècules conjugades barrejats amb polímers aïllants, mitjançant la tècnica de Bar-assisted meniscus shearing (BAMS). BAMS és una tècnica ràpida, de baix cost i escalable que permet la formació de pel·lícules cristal·lines i uniformes. Els EGOFET van ser estudiats pel d
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Tachi, Kiichi. "Etude physique et technologique d'architectures de transistors MOS à nanofils." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00721968.

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Il a été démontré que la structure gate-all-around en nanofils de silicium peut radicalement supprimer les effets de canaux courts. De plus, l'introduction d'espaceurs internes entre ces nanofils peut permettre de contrôler la tension de seuil, à l'aide d'une deuxième grille de contrôle. Ces technologies permettent d'obtenir une consommation électrique extrêmement faible. Dans cette thèse, pour obtenir des opérations à haute vitesse (pour augmenter le courant de drain), la technique de réduction de la résistance source/drain sera débattue. Les propriétés de transport électronique des NWs empil
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Acosta, Sandra Massulini. "Projeto de amplificadores operacionais CMOS utilizando transistores compostos em "sea-of-transistors"." reponame:Repositório Institucional da UFSC, 1997. https://repositorio.ufsc.br/handle/123456789/111588.

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Huang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.

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Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and
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Xu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs." Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.

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Krumm, Jürgen. "Circuit analysis methodology for organic transistors = Methodik zur Schaltungsanalyse für organische Transistoren." kostenfrei, 2008. http://deposit.d-nb.de/cgi-bin/dokserv?idn=989071553.

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Libri sul tema "Transistors"

1

Welter, Michael. Transistor dictionary: Bipolar transistors. International Thomson, 1996.

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Intermetall, ITT. Transistors. ITT Intermetall, 1996.

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Semiconductors, ITT. Transistors. ITT Semiconductors, 1987.

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Semiconductors, ITT. Transistors. ITT Semiconductors, 1992.

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(Firm), Knovel, ed. Understanding modern transistors and diodes. Cambridge University Press, 2010.

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Components, Philips. PowerMOS transistors. Philips Components, 1988.

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(Firm), Harris Semiconductor. Bipolar power transistors. Harris Semiconductor, 1992.

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Kuo, Yue, ed. Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2.

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Bindal, Ahmet, and Sotoudeh Hamedi-Hagh. Silicon Nanowire Transistors. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-27177-4.

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Semiconductors, Philips. Small-signal transistors. Philips Semiconductors, 1995.

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Capitoli di libri sul tema "Transistors"

1

Julien, Levisse Alexandre Sébastien, Xifan Tang, and Pierre-Emmanuel Gaillardon. "Innovative Memory Architectures Using Functionality Enhanced Devices." In Emerging Computing: From Devices to Systems. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7487-7_3.

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AbstractSince the introduction of the transistor, the semiconductor industry has always been able to propose an increasingly higher level of circuit performance while keeping cost constant by scaling the transistor’s area. This scaling process (named Moore’s law) has been followed since the 80s. However, it has been facing new constraints and challenges since 2012. Standard sub-30nm bulk CMOS technologies cannot provide sufficient performance while remaining industrially profitable. Thereby, various solutions, such as FinFETs (Auth et al. 2012) or Fully Depleted Silicon On Insulator (FDSOI) (F
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Jain, S., M. Willander, and R. Van Overstraeten. "Transistors." In Compound Semiconductors Strained Layers and Devices. Springer US, 2000. http://dx.doi.org/10.1007/978-1-4615-4441-8_8.

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Razeghi, Manijeh. "Transistors." In Technology of Quantum Devices. Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-1056-1_5.

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Grundmann, Marius. "Transistors." In Graduate Texts in Physics. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13884-3_23.

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Brand, John R. "Transistors." In Handbook of Electronics Formulas, Symbols, and Definitions. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4684-6491-7_2.

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Stoecker, W. F., and P. A. Stoecker. "Transistors." In Microcomputer Control of Thermal and Mechanical Systems. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-6560-0_4.

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Powell, Richard F. "Transistors." In Testing Active and Passive Electronic Components. Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-8.

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Winnacker, Albrecht. "Transistors." In The Physics Behind Semiconductor Technology. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-10314-8_13.

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Robinson, Kevin. "Transistors." In Practical Audio Electronics. Focal Press, 2020. http://dx.doi.org/10.4324/9780429343056-17.

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Atallah, Jad G., and Mohammed Ismail. "Transistors." In Integrated Electronic Circuits. Springer International Publishing, 2024. http://dx.doi.org/10.1007/978-3-031-62707-1_4.

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Atti di convegni sul tema "Transistors"

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Klauk, Hagen. "Flexible nanoscale organic thin-film transistors." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3027109.

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Frisbie, C. Daniel. "Electrolyte-gated transistors: a platform for exploring carrier transport at high charge densities in organic semiconductors." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3027343.

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Le, Vianna N., Kyle N. Baustert, Megan Brown, et al. "An easy to implement strategy for improving organic electrochemical transistor stability: combining chemical doping with solvent degassing." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3028019.

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Podzorov, Vitaly, and Vladimir V. Bruevich. "High-resolution ac-Hall characterization of charge carrier transport in organic and perovskite transistors." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3028774.

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Anthony, John E. "Exploring small-molecule design rules for organic transistors." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3025316.

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Goldberg, Elliot D., and Henning Sirringhaus. "The effects of strain on the electronic properties of rubrene single crystals." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3026500.

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Sirringhaus, Henning. "Device physics of organic field effect transistors." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3026848.

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Bonil, Amric, and Hans Kleemann. "Organic permeable base transistors with floating-base for multistate non-volatile memories." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3028266.

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Alarcon Espejo, Paula, Ruben Sarabia Riquelme, Giovanni M. Matrone, et al. "High-hole-mobility PEDOT:PSS fiber-OECTs for future bio-hybrid technologies." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3028367.

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Caironi, Mario. "Fast and edible transistors based on organic semiconductors." In Organic and Hybrid Transistors XXIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2024. http://dx.doi.org/10.1117/12.3027241.

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Rapporti di organizzazioni sul tema "Transistors"

1

Kastner, Marc A. Single Electron Transistors. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada427420.

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Morkoc, Hadis. High Speed Heterostructure Transistors. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada301117.

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Tsui, D. C. Double Superlattice GaAs IR Transistors. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada300606.

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Xing, Huili. Ideal Channel Field Effect Transistors. Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada518256.

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Kastner, Marc A. Electron Spins in Single Electron Transistors. Defense Technical Information Center, 2009. http://dx.doi.org/10.21236/ada500634.

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Ho, P. P., and R. R. Alfano. All-optical Transistors for Ultrafast Computing. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada402850.

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Cooper, James A., and Jr. Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada413135.

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Lee, Charles Y., and Klaus Dimmler. Organic Based Flexible Transistors and Electronic Device. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada434601.

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Lussem, Bjorn. Finding the Equilibrium of Organic Electrochemical Transistors. Kent State University, 2020. http://dx.doi.org/10.21038/blus.2020.0101.

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Dodabalapur, Ananth. High Performance Crystalline Organic Transistors and Circuit. Defense Technical Information Center, 2009. http://dx.doi.org/10.21236/ada561601.

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