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Articoli di riviste sul tema "Zn diffusion"

Autore: Grafiati

Pubblicato: 10 dicembre 2022

Ultima modifica: 28 gennaio 2023

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1

Khoulif, S., E. B. Hannech e N. Lamoudi. "Study of Reactive Diffusion in Cu/Zn Diffusion Couple". Indian Journal Of Science And Technology 15, n. 48 (27 dicembre 2022): 2740–47. http://dx.doi.org/10.17485/ijst/v15i48.13.

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2

Mittal, Jagjiwan, e Kwang-Lung Lin. "Diffusion of elements during reflow ageing of Sn-Zn solder in liquid state on Ni/Cu substrate – theoretical and experimental study". Soldering & Surface Mount Technology 30, n. 3 (4 giugno 2018): 137–44. http://dx.doi.org/10.1108/ssmt-10-2017-0035.

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Purpose This paper aims to study the diffusion of Zn, Ni and Sn in the liquid state during the reflow ageing of the Sn-Zn solder above its melting point on an Ni/Cu substrate in relation to the formation of intermetallic compounds (IMCs). Design/methodology/approach The Sn-Zn solder is reflowed on Ni/Cu substrates and is aged at 503 K. The formation of IMCs and their composition is characterized using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). Diffusion coefficients and diffusion distances of Zn, Ni and Sn in the liquid state during reflow and ageing are theoretically calculated. Both experimental and theoretical behaviours for Ni and Zn diffusions are compared. Findings Calculations show a linear increment in the liquid-state diffusion coefficients of Ni, Zn and Sn in the solder matrix with a rise in temperature, but they remained constant during ageing. However, diffusion distances increased slowly with temperature but manifold with ageing time. The experimental results revealed segregation of Zn and Ni at the interface in the as-reflow aged specimens. The Zn was concentrated at the solder–substrate interface and it reacted with Ni diffusing from the substrate to form Ni-Sn-Zn IMCs. The rapid diffusion of Zn and Ni with the increase in ageing time increased their atomic concentrations in the IMCs against the reduction in Sn concentration owing to a comparatively slower diffusion. Originality/value The novelty of the paper is the detailed study of theoretical diffusion of Zn, Sn and Ni in the liquid state during reflow ageing of Sn-Zn above its melting points on a Ni/Cu substrate. This is compared with values obtained experimentally and related to the mechanisms of IMC formation.

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3

Sadaiyandi, K., e K. Ramachandran. "Zn Diffusion in ZnTe". physica status solidi (b) 170, n. 2 (1 aprile 1992): K77—K81. http://dx.doi.org/10.1002/pssb.2221700235.

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4

LIANG, LIU, YA-LING LIU, YA LIU, HAO-PING PENG, JIAN-HUA WANG e XU-PING SU. "EFFECT OF Mg AND TEMPERATURE ON Fe–Al ALLOY LAYER IN Fe/(Zn–6%Al–x%Mg) SOLID–LIQUID DIFFUSION COUPLES". Surface Review and Letters 24, Supp01 (31 ottobre 2017): 1850010. http://dx.doi.org/10.1142/s0218625x18500105.

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Fe/(Zn–6%Al–[Formula: see text]%Mg) solid–liquid diffusion couples were kept at various temperatures for different periods of time to investigate the formation and growth of the Fe–Al alloy layer. Scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and X-ray diffraction (XRD) were used to study the constituents and morphology of the Fe–Al alloy layer. It was found that the Fe2Al5Znxphase layer forms close to the iron sheet and the FeAl3Znxphase layer forms near the side of the melted Zn–6%Al–3%Mg in diffusion couples. When the Fe/(Zn–6%Al–3%Mg) diffusion couple is kept at 510[Formula: see text]C for more than 15[Formula: see text]min, a continuous Fe–Al alloy layer is formed on the interface of the diffusion couple. Among all Fe/(Zn–6%Al–[Formula: see text]%Mg) solid–liquid diffusion couples, the Fe–Al alloy layer on the interface of the Fe/(Zn–6% Al–3% Mg) diffusion couple is the thinnest. The Fe–Al alloy layer forms only when the diffusion temperature is above 475[Formula: see text]. These results show that the Fe–Al alloy layer in Fe/(Zn–6%Al–[Formula: see text]%Mg) solid–liquid diffusion couples is composed of Fe2Al5Znxand FeAl3Znxphase layers. Increasing the diffusing temperature and time period would promote the formation and growth of the Fe–Al alloy layer. When the Mg content in the Fe/(Zn–6%Al–[Formula: see text]%Mg) diffusion couples is 3%, the growth of the Fe–Al alloy layer is inhibited. These results may explain why there is no obvious Fe–Al alloy layer formed on the interface of steel with a Zn–6%Al–3%Mg coating.

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5

Dayananda, Mysore A. "Selected Analyses and Observations in Multicomponent Diffusion". Defect and Diffusion Forum 297-301 (aprile 2010): 1451–60. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.1451.

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Selected isothermal diffusion studies in ternary and quaternary systems are reviewed in order to present analytical and experimental approaches adopted for the determination of interdiffusion fluxes of components, interdiffusion coefficients, diffusional interactions among components, and internal consistency in the experimental data. Several interesting phenomena and observations including uphill diffusion, zero-flux planes and flux reversals, and double serpentine diffusion paths are illustrated with selected single phase Cu-Ni-Zn, Fe-Ni-Al and Cu-Ni-Zn-Mn diffusion couples. The main challenges involved in the experimental determination of interdiffusion data from multicomponent diffusion couples and in the application of such data are also addressed.

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6

Gramlich, A., S. Tandy, E. Frossard, J. Eikenberg e R. Schulin. "Diffusion limitation of zinc fluxes into wheat roots, PLM and DGT devices in the presence of organic ligands". Environmental Chemistry 11, n. 1 (2014): 41. http://dx.doi.org/10.1071/en13106.

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Environmental context Zinc is an essential micronutrient for plants and many arid areas of the world have zinc-deficient soils. The bioavailability of Zn to plants is influenced by diffusion limitations and complex lability in the soil solution. To identify the relative importance of these two factors, we investigated the influence of diffusion layer thickness on Zn uptake by wheat and by two bio-mimetic devices in the presence of ethylenediaminetetraacetic acid and two natural ligands found in soil. Abstract Organic ligands can increase metal mobility in soils. The extent to which this can contribute to plant metal uptake depends among others, on complex lability and diffusion limitations in solute transfer from the soil solution to root uptake sites. We investigated the influence of diffusion layer thickness on zinc uptake by wheat seedlings in the presence of ethylenediaminetetraacetic acid (EDTA), citrate and histidine with similar free Zn by measuring 65Zn uptake from stirred, non-stirred and agar-containing solutions. Analogous experiments were performed using permeation liquid membranes (PLM) and ‘diffusive gradients in thin films’ (DGT) probes as bio-mimetic devices. In treatments with low EDTA concentrations (~2µM) or ligand-free Zn solution, increasing diffusion layer thickness reduced Zn fluxes into roots to a similar extent as into PLM and DGT probes, indicating reduced uptake attributable to diffusion limitation. In the citrate treatments root Zn influx was similar to EDTA treatments under stirred conditions, but increasing diffusion layer thickness did not affect Zn uptake. This suggests complex dissociation compensated for reduced Zn2+ diffusion and that the entire complexes were not taken up. The Zn root influxes in the histidine treatments were found to be on average by a factor of 2.5 higher than in the citrate treatments and they also showed no decrease in non-stirred and agar treatments. Dissociation kinetics inferred from PLM measurements explained a large part, although not all, of the increased Zn uptake by the plants in the presence of histidine. The difference may be a result of the uptake of neutral or positive Zn–histidine complexes. The results of this study confirm that labile complexes can contribute to Zn uptake by wheat either through diffusion limitation and complex dissociation or through uptake of entire complexes, depending on the nature of the ligands.

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7

Das, Sazol Kumar, Young Min Kim, Tae Kwon Ha, Raynald Gauvin e In Ho Jung. "Anisotropic Diffusion Behaviour of Al and Zn in HCP Mg: Diffusion Couple Experiment Using Mg Single Crystal". Materials Science Forum 765 (luglio 2013): 516–20. http://dx.doi.org/10.4028/www.scientific.net/msf.765.516.

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Diffusion couple experiments for Mg-Al and Mg-Zn were carried out with Mg single crystal to determine the anisotropic diffusion coefficients of Al and Zn in hcp Mg at the temperature range between 553 and 693 K. Based on the experimental results, anisotropic diffusion coefficients of Al and Zn were calculated using multiphase diffusion simulations. Al diffusion in hcp Mg is slightly faster than Mg self-diffusion itself, but the diffusion of Zn is slightly slower than Mg self-diffusion. The diffusion coefficients of Al and Zn along the a-axis (basal plane) of hcp Mg is slightly higher (1.1-1.4 times) than those along the c-axis (normal to the basal plane), which is also similar to Mg self-diffusion behaviour.

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8

Hu, Zhihua. "Study on microstructure and properties of Zn-Sn coating on sintered Nd-Fe-B magnets by grain boundary diffusion process". Anti-Corrosion Methods and Materials 68, n. 4 (10 agosto 2021): 340–45. http://dx.doi.org/10.1108/acmm-02-2021-2440.

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Purpose The microstructure and properties of Zn-Sn coating on sintered Nd-Fe-B magnets were investigated by the grain boundary diffusion process, to improve the corrosion resistance of magnet surface and explore the feasibility of realizing the lower-temperature grain boundary diffusion. Design/methodology/approach The Zn-Sn coating was deposited on sintered Nd-Fe-B magnets by magnetron sputtering, and then the Zn-Sn coated magnets were put into the vacuum tube furnace for grain boundary diffusion process. The morphology and structure of Zn-Sn coating as well as its mechanical properties and corrosion resistance were investigated. Findings Results showed that the particle size of vacuum diffusion-treated Zn-Sn coating increased and the particle agglomeration was weakened with increasing diffusion temperature, and the non-vacuum diffusion-treated Zn-Sn coating was oxidized to generate SnO2 and ZnO compounds. The binding force of coating first increased and then decreased with increasing diffusion temperature, and the maximum binding force was obtained at 540 °C. The binding force and corrosion resistance of non-vacuum diffusion-treated Zn-Sn coating were higher than the vacuum diffusion-treated Zn-Sn coating at the same diffusion temperature. Originality/value The Zn-Sn coating after diffusion treatment can provide complete protection, and the coating elements diffusion can be carried out at the same temperature as the secondary aging of sintered Nd-Fe-B magnets. Simultaneously, further diffusion process optimization needs to be completed because the diffusion depth is very low and only about 10 µm, which does not meet the requirements of traditional grain boundary diffusion method.

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9

Kim, Seon Tai, e Dong Chan Moon. "Zn Diffusion in In1-xGaxP". Japanese Journal of Applied Physics 29, Part 1, No. 4 (20 aprile 1990): 627–29. http://dx.doi.org/10.1143/jjap.29.627.

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10

Tong, Jianbin, Yi Liang, Shicheng Wei, Hongyi Su, Bo Wang, Yuzhong Ren, Yunlong Zhou e Zhongqi Sheng. "Microstructure and Corrosion Resistance of Zn-Al Diffusion Layer on 45 Steel Aided by Mechanical Energy". Materials 12, n. 18 (18 settembre 2019): 3032. http://dx.doi.org/10.3390/ma12183032.

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In harsh environments, the corrosion damage of steel structures and equipment is a serious threat to the operational safety of service. In this paper, a Zn-Al diffusion layer was fabricated on 45 steel by the Mechanical Energy Aided Diffusion Method (MEADM) at 450 °C. The microstructure and composition, the surface topography, and the electrochemical performance of the Zn-Al diffusion layer were analyzed before and after corrosion. The results show that the Zn-Al diffusion layer are composed of Al2O3 and Γ1 phase (Fe11Zn40) and δ1 phase (FeZn6.67, FeZn8.87, and FeZn10.98) Zn-Fe alloy. There is a transition zone with the thickness of about 5 μm at the interface between the Zn-Al diffusion layer and the substrate, and a carbon-rich layer exists in this zone. The full immersion test and electrochemical test show that the compact corrosion products produced by the initial corrosion of the Zn-Al diffusion layer will firmly bond to the Zn-Al diffusion layer surface and fill the crack, which plays a role in preventing corrosion of the corrosive medium and reducing the corrosion rate of the Zn-Al diffusion layer. The salt spray test reveals that the initial corrosion products of the Zn-Al diffusion layer are mainly ZnO and Zn5(OH)8Cl2H2O. New corrosion products such as ZnAl2O4, FeOCl appear at the middle corrosion stage. The corrosion product ZnAl2O4 disappears, and the corrosion products Zn(OH)2 and Al(OH)3 appear at the later corrosion stage.

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11

Wada, Morio, Masahito Seko, Katsutoshi Sakakibara e Yoichi Sekiguchi. "Zn Diffusion into InP Using Dimethylzinc as a Zn Source". Japanese Journal of Applied Physics 28, Part 2, No. 10 (20 ottobre 1989): L1700—L1703. http://dx.doi.org/10.1143/jjap.28.l1700.

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12

Wada, Morio, Katsutoshi Sakakibara, Masahiko Higuchi e Yoichi Sekiguchi. "Evaluation of Surface Zn Concentration in Zn Diffusion into InP". Japanese Journal of Applied Physics 31, Part 2, No. 5B (15 maggio 1992): L597—L599. http://dx.doi.org/10.1143/jjap.31.l597.

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13

Dong, Ji-Hong, Hua Liu, Shu-De Ji, De-Jun Yan e Hua-Xia Zhao. "Diffusion Bonding of Al-Mg-Si Alloy and 301L Stainless Steel by Friction Stir Lap Welding Using a Zn Interlayer". Materials 15, n. 3 (18 gennaio 2022): 696. http://dx.doi.org/10.3390/ma15030696.

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Friction stir lap welding (FSLW) is expected to join the hybrid structure of aluminum alloy and steel. In this study, the Al-Mg-Si aluminum alloy and 301L stainless steel were diffusion bonded by FSLDW with the addition of 0.1 mm thick pure Zn interlayer, when the tool pin did not penetrate the upper aluminum sheet. The characteristics of lap interface and mechanical properties of the joint were analyzed. Under the addition of Zn interlayer, the diffusion layer structure at lap interface changed from continuous to uneven and segmented. The components of the diffusion layer were more complex, including Fe-Al intermetallic compounds (IMCs), Fe-Zn IMCs and Al-Zn eutectic. The largely changed composition and thickness of uneven and segmented diffusion layer at the lap interface played a significant role in the joint strength. The tensile shear load of Zn-added joint was 6.26 kN, increasing by 41.3% than that of Zn-not-added joint. These two joints exhibited interfacial shear fracture, while the Zn interlayer enhanced the strength of diffusion bonding by extending the propagation path of cracks.

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14

Guicheng, Zhang. "Study on Zn diffusion in Ge". Journal of Electronics (China) 5, n. 2 (aprile 1988): 133–37. http://dx.doi.org/10.1007/bf02778818.

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15

Song, Ilho, Hyunkwon Shin, Minchang Cheong, Jaemin Myoung e Myeongkyu Lee. "Diffusion of Zn in stoichiometric LiTaO3". Journal of Crystal Growth 270, n. 3-4 (ottobre 2004): 568–72. http://dx.doi.org/10.1016/j.jcrysgro.2004.07.025.

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16

Gandova, V. D. "Ni-Bi-Zn ternary system investigation using diffusion couples technique". Journal of Mining and Metallurgy, Section B: Metallurgy 52, n. 1 (2016): 113–18. http://dx.doi.org/10.2298/jmmb141101005g.

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An investigation of Ni-Bi-Zn system was performed using a diffusion couples technique and the diffusion paths were constructed. For that purpose diffusion couples consisting of solid Ni and liquid Bi-Zn phase were annealed at 450?C. The phase and chemical compositions of the contact zone were determined by scanning electron microscope. The diffusion layers found in the Ni-Bi-Zn ternary system were Beta1, ?-Ni5Zn21 and liquid. No intermetallic compounds in Bi-Ni binary phase diagram were observed.

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17

Ma, Y. B., e N. C. Uren. "The fate and transformations of zinc added to soils". Soil Research 35, n. 4 (1997): 727. http://dx.doi.org/10.1071/s96102.

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A new sequential extraction procedure to remove specifically adsorbed forms of trace metals and easily reducible manganese (Mn) oxide fractions was used to study the fate and transformations of zinc (Zn) added to soils. Most of the endogenous Zn in field soils (75–87%) was found to exist in a residual fraction which is considered to be silicates, while the Zn added as a fertiliser in the field soils was found predominantly in an EDTA-extractable fraction and in association with iron (aluminium) [Fe (Al)] and Mn oxides. The Zn recently added to soils was found to be more in the reactive forms (water-soluble plus exchangeable and EDTA-extractable Zn) than the Zn added to field soils in association with long-term Zn application. With time, the EDTA-extractable Zn transformed into the unreactive forms (Zn associated with Fe (Al) and Mn oxides). The processes could be described by a diffusion equation. The apparent diffusion rate coefficients were found to be in the order of 10–10–10–11/s. The diffusion activation energy (Ea) was found to be 67 kJ/mol. The diffusion of Zn cations into microporous solids is probably a rate-limiting process. The transformation of reactive Zn into unreactive Zn was enhanced by elevated temperatures and by drying and rewetting. The drying and rewetting effect at relatively high temperature may be important in the processes which lead to decreases in the availability of Zn to plants.

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18

Wada, M., K. Sakakibara, M. Higuchi e Y. Sekiguchi. "Investigation of Zn diffusion in InP using dimethylzinc as Zn source". Journal of Crystal Growth 114, n. 3 (novembre 1991): 321–26. http://dx.doi.org/10.1016/0022-0248(91)90048-a.

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19

Fujii, N., T. Kimura, M. Tsugami, T. Sonoda, S. Takamiya e S. Mitsui. "Zn diffusion mechanism in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures". Journal of Crystal Growth 145, n. 1-4 (dicembre 1994): 808–12. http://dx.doi.org/10.1016/0022-0248(94)91146-0.

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20

Andryushkin, V. V., A. G. Gladyshev, A. V. Babichev, E. S. Kolodeznyi, I. I. Novikov, L. Ya Karachinsky, N. A. Maleev et al. "Zn diffusion technology for InP-InGaAs avalanche photodiodes". Journal of Physics: Conference Series 2103, n. 1 (1 novembre 2021): 012184. http://dx.doi.org/10.1088/1742-6596/2103/1/012184.

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Abstract This paper presents a study of Zn diffusion process into InP and InGaAs/InP epitaxial heterostructures grown by molecular beam epitaxy. It was found that both diffusion systems: a resistively heated quartz reactor with a solid-state Zn vapor source placed inside and hydrogen or nitrogen as the carrier gas and MOCVD reactor with hydrogen as the carrier gas allow achieving similar dopant concentration above 2*10e18 cm-3. The depth of the diffusion front in the InP layer is located from 2 to 3.5 μm depending on the temperature and time of the diffusion process. The diffusion of Zn into InP through the intermediate InGaAs layer provides better surface quality comparing with direct zinc diffusion into InP surface.

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21

Jäger, Wolfgang. "Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy". Diffusion Foundations 17 (luglio 2018): 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

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This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution of the defect microstructure correlate with the experimentally determined Zn profiles whose shapes depend on the chosen diffusion conditions. General phenomena observed for all semiconductors are the formation of dislocation loops, precipitates, voids, and dislocations and of Zn-rich precipitates in the diffusion regions. The formation of extended defects near the diffusion front can be explained as result of point defect supersaturations generated by interstitial-substitutional zinc exchange via the kick-out mechanism. The defects may act as sinks for dopants and as sources and sinks for point defects during the continuing diffusion process, thereby providing a path to establishing defect-mediated local point defect equilibria. The investigations established a consistent picture of the formation and temporal evolution of defects and the mechanisms of zinc diffusion in these semiconductors for diffusion conditions leading to high-concentration Zn concentrations. Based on these results, numerical modelling of anomalously shaped dopant concentration profiles leads to satisfactory quantitative results and yields information on type and charge states of the point defect species involved, also for near-surface Zn concentration profiles and the absence of extended defects.

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22

Janik, Vit, Yongjun Lan, Peter Beentjes, David Norman, Guido Hensen e Seetharaman Sridhar. "Zn Diffusion and α-Fe(Zn) Layer Growth During Annealing of Zn-Coated B Steel". Metallurgical and Materials Transactions A 47, n. 1 (28 ottobre 2015): 400–411. http://dx.doi.org/10.1007/s11661-015-3203-y.

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23

Nakajima, Osaake. "Evaluation of Lateral Zn Diffusion in GaAs under a Diffusion Mask". IEEJ Transactions on Electronics, Information and Systems 113, n. 7 (1993): 556–65. http://dx.doi.org/10.1541/ieejeiss1987.113.7_556.

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Christenson, K. K., e J. A. Eades. "ALCHEMI studies on the location of zinc in GaAs". Proceedings, annual meeting, Electron Microscopy Society of America 47 (6 agosto 1989): 584–85. http://dx.doi.org/10.1017/s0424820100154895.

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The diffusion of Zn in GaAs is anomalous in that the diffusion coefficient D is proportional to the Zn concentration squared. Further, the diffusion rate of the column III species in III-V layer structures (ie. Ga and Al in GaAs-GaAlAs) can be increased by 105 with the addition of doping levels of Zn3. The column V sites are not affected. As an aid to understanding the diffusion process we have located the position of the Zn in the GaAs lattice.There are four high symmetry positions in the zincblende structure that the Zn could occupy: Ga, As, T (Tetrahedral interstitial, located at 1/2 1/2 1/2 with four nearest neighbors at 0.433 a0) and H (Hexagonal interstitial, located at 5/8 5/8 5/8 with six nearest neighbors at 0.415 a0). Interstitial diffusion involves hopping between alternating T and H sites with the energy barrier to diffusion being equivalent to the difference in the potential energy of the two sites. Figure 1 indicates the possible low-index orientations for ALCHEMI studies which can differentiate between these sites.

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25

Takahashi, Tomoshi, M. Katoh, Yoritoshi Minamino e Toshimi Yamane. "Ternary Diffusion in Cu-Mn-Zn Alloys". Defect and Diffusion Forum 95-98 (gennaio 1993): 641–46. http://dx.doi.org/10.4028/www.scientific.net/ddf.95-98.641.

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Iwamura, Yasuo, e Naozo Watanabe. "InAs Planar Diode Fabricated by Zn Diffusion". Japanese Journal of Applied Physics 39, Part 1, No. 10 (15 ottobre 2000): 5740–45. http://dx.doi.org/10.1143/jjap.39.5740.

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Benabdeslem, M., N. Benslim, L. Bechiri, L. Mahdjoubi, E. B. Hannech e G. Nouet. "Diffusion of Zn in CuInSe2 bulk crystals". Journal of Crystal Growth 274, n. 1-2 (gennaio 2005): 144–48. http://dx.doi.org/10.1016/j.jcrysgro.2004.09.085.

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Usami, Akira, Yutaka Tokuda, Hiroyuki Shiraki, Hiroyuki Ueda, Takao Wada, Hirobumi Kan e Tadayoshi Murakami. "Rapid thermal diffusion of Zn inton‐type GaAs0.6P0.4from Zn‐doped oxide films". Journal of Applied Physics 66, n. 8 (15 ottobre 1989): 3590–94. http://dx.doi.org/10.1063/1.344064.

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Hu, Y., I. P. Jones, M. Aindow e I. R. Harris. "Zn diffusion induced precipitation along grain boundaries in Zn-coated NdFeB magnets". Journal of Magnetism and Magnetic Materials 261, n. 1-2 (aprile 2003): 13–20. http://dx.doi.org/10.1016/s0304-8853(02)01407-5.

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Paek, Moon-Ho, P. H. Hao e L. C. Wang. "Anomalous Lateral Zn Surface Diffusion in InP Caused by Zn-Contained Metallization". Journal of Electronic Materials 26, n. 1 (gennaio 1997): 25–29. http://dx.doi.org/10.1007/s11664-997-0128-2.

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Guicheng, Zhang, e Yang Yi. "Study of Zn, Zn−Cd diffusion in In x Ga1−x As". Journal of Electronics (China) 5, n. 1 (gennaio 1988): 47–52. http://dx.doi.org/10.1007/bf02778749.

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Shcherbakou, V. G. "Some aspects of structure formation in sintering process between cuprum fibers and Zn". Litiyo i Metallurgiya (FOUNDRY PRODUCTION AND METALLURGY), n. 4 (14 gennaio 2019): 127–32. http://dx.doi.org/10.21122/1683-6065-2018-4-127-132.

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The article reveals some aspects of structure formation between cuprum fibers and Zn in fluidized powder mixture. It was established that diffusion saturation of cuprum fibers with Zn leads to formation of diffusion layer with decreased melting temperature. The presence of high concentrated Zn zones on the top of the each separate fiber results in improved compactability and sintering temperature in that of high importance in production of porous filter materials.

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Lee, Ju-Hyuk, Riyul Kim, Soohyun Kim, Jiyun Heo, Hyeokjin Kwon, Jung Hoon Yang e Hee-Tak Kim. "Dendrite-free Zn electrodeposition triggered by interatomic orbital hybridization of Zn and single vacancy carbon defects for aqueous Zn-based flow batteries". Energy & Environmental Science 13, n. 9 (2020): 2839–48. http://dx.doi.org/10.1039/d0ee00723d.

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Mittal, J., e K. L. Lin. "Zn diffusion and reflow behaviour of Sn-9Zn and Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga solders on a Ni/Cu substrate under IR reflow". Soldering & Surface Mount Technology 26, n. 2 (1 aprile 2014): 87–95. http://dx.doi.org/10.1108/ssmt-07-2013-0020.

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Purpose – This paper aims to compare the reflow and Zn diffusion behaviors in Sn-Zn and Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga (5E) solders during soldering on a Ni/Cu substrate under infrared (IR) reflow. The study proposes a model on the effect of various elements particularly Zn diffusion behavior in the solders on the formation of intermetallic compounds (IMCs). Design/methodology/approach – The melting activities of two solders near their melting points on copper substrates are visualized in an IR reflow furnace. Reflowed solder joints were analyzed using scanning electron microscope and energy dispersive X-ray spectroscopy. Findings – Reflow behaviors of the solders are similar. During melting, solder balls are first merged into each other and then reflow on the substrate from top to bottom. Both solders show a reduced amount of Zn in the solder. Theoretical calculations demonstrate a higher Zn diffusion in the 5E solder; however, the amount of Zn actually observed at the solder/substrate interface is lower than Sn-9Zn solder due to the formation of ZnAg3 in the solder. A thinner IMC layer is formed at the interface in the 5E solder than the Sn-Zn solder. Research limitations/implications – The present work compares the 5E solder only with Sn-Zn solder. Additional research work may be required to compare 5E solder with other solders like Sn-Ag, SnAgCu, etc. to further establish its practical applications. Practical implications – The study ascertains the advantages of 5E solder over Sn-Zn solder for all practical applications. Originality/value – The significance of this paper is the understanding of the relation between reflow behavior of solders and reactivity of different elements in the solder alloys and substrate to form various IMCs and their influence on the formation of IMC layer at solder/substrate interface. Emphasis is provided for the diffusion behavior of Zn during reflow and respective reaction mechanisms.

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35

Setargew, Nega, e Daniel J. Parker. "Zinc diffusion induced precipitation of σ-phase in austenitic stainless steel". Metallurgical Research & Technology 116, n. 6 (2019): 618. http://dx.doi.org/10.1051/metal/2019040.

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Zinc diffusion-induced degradation of AISI 316LN austenitic stainless steel pot equipment used in 55%Al-Zn and Zn-Al-Mg coating metal baths is described. SEM/EDS analyses results showed that the diffused zinc reacts with nickel from the austenite matrix and results in the formation of Ni-Zn intermetallic compounds. The Ni-Zn intermetallic phase and the nickel depleted zones form a periodic and alternating layered structure and a mechanism for its formation is proposed. The role of cavities and interconnected porosity in zinc vapour diffusion-induced degradation and formation of Ni-Zn intermediate phases is also discussed. The formation of Ni-Zn intermediate phases and the depletion of nickel in the austenite matrix results in the precipitation of σ-phase and α-ferrite in the nickel depleted regions of the matrix. This reaction will lead to increased susceptibility to intergranular cracking and accelerated corrosion of immersed pot equipment in the coating bath. Zinc diffusion induced precipitation of σ-phase in austenitic stainless steels that we are reporting in this work is a new insight with important implications for the performance of austenitic stainless steels in zinc containing metal coating baths and other process industries. This new insight will further lead to improved understanding of the role of substitutional diffusion and the redistribution of alloying elements in the precipitation of σ-phase in austenitic stainless steels.

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36

Soares, D., J. Barbosa e C. Vilarinho. "Interactions of Cu-substrates with titanium-alloyed Sn-Zn solders". Journal of Mining and Metallurgy, Section B: Metallurgy 42, n. 1 (2006): 45–56. http://dx.doi.org/10.2298/jmmb0601045s.

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The interactions of copper substrate with titanium-alloyed Sn-Zn eutectic solders have been studied. Two series of experiments have been performed. The first one consisted in differential thermal analyses of Sn-Zn nearly eutectic alloys containing from 1.3 to 2.2 wt. % Ti. Diffusion couples consisted of Cu-wires and Sn-Zn-Ti liquid solders, produced at 250 and 275 OC have been prepared in the second series,. The contact times were up to 3600 s. The contact zones have been characterized by optical and scanning electron microscope. Two layers have been found along the interfaces solid/liquid. The first and the second layers are identical, respectively, with ? and ? phases of the Cu-Zn system. No changes of the chemical compositions were detected for the tested temperatures and reaction times. Continuous parabolic growth of the total diffusion zone thickness with the time of diffusion is observed. The growth is due mainly to one the formed layers (? ) while the thickness of the ?-phase layer, stays almost constant for all tested diffusion times and temperatures.

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37

Chan, Wu Chung, e Chia Wei Cheng. "Preparation of Poly(vinyl Alcohol)(PVA)/peat/clay Composite Beads as Adsorbents for the Removal of Pb (II) and Zn(II) Ions from Aqueous Solutions". Advanced Materials Research 535-537 (giugno 2012): 2224–27. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.2224.

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A new type of poly(vinyl alcohol)(PVA)/peat/clay composite bead was prepared and shown to be suitable for use as an adsorbent. The mass transport process for the adsorption of metal ions onto the composite beads in an aqueous system was investigated. In the external mass transport process, the rate of ion diffusion decreased and increased with increasing initial metal ion concentrations for Pb+2and Zn+2 ions, respectively. In the intraparticle diffusion process, the diffusion coefficient decreased with increasing initial metal ion concentrations in the range of 1×10-3 to 4×10-3 M, and the diffusion coefficient maintained an almost constant value in the range of 6×10-3 to 22×10-3 M. The rate of ion diffusion within the adsorbent for the Pb+2 ions was faster than that for the Zn+2 ions. The adsorption mechanism was controlled by the intraparticle diffusion process. The maximum amount of adsorbed metal ions at adsorption equilibrium for Pb+2 and Zn+2 ions in this study was 134.57 and 13.28 mg/g composite bead, respectively.

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38

Rodríguez, R. M., E. Brillas, J. A. Garrido e J. Doménech. "Electrochemical behaviour of the Zn(II)–Zn(Hg) system in aqueous ethylene glycol solutions". Canadian Journal of Chemistry 64, n. 5 (1 maggio 1986): 891–96. http://dx.doi.org/10.1139/v86-147.

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The electrochemical behaviour of the Zn(II)–Zn(Hg) system in aqueous ethylene glycol (EG) solutions containing 5.0 × 10−2 M LiClO4 has been studied by polarography and cyclic voltammetry. The reversible half-wave potentials, the diffusion coefficients and the Walden products for Zn(II) have been polarographically determined. The standard free energies of transfer of 1 mol of Zn(II) ions from water to EG–water mixtures, [Formula: see text], obtained from the reversible half-wave potentials vs. the ferrocene electrode scale, are always negative, indicating a greater stability of Zn(II) in EG–water mixtures than in pure water. The splitting of the [Formula: see text] values into electrostatic and chemical contributions shows that the mixtures are more basic than water. The analysis of the variation of the Walden product with solvent composition indicates an enhancement of the solvent structure in the water-rich region. The diffusion coefficient for Zn in mercury, the transfer coefficients for Zn(II) electroreduction, and the apparent standard rate constants of the Zn(II)–Zn(Hg) system have been determined by cyclic voltammetry. The change in the kinetics with solvent composition is discussed in terms of existing models.

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39

Huang, Jun, Li Wang, Zhongyou Peng, Mengke Peng, Longbin Li, Xiannong Tang, Yazhou Xu, Licheng Tan, Kai Yuan e Yiwang Chen. "Minimization of ion transport resistance: diblock copolymer micelle derived nitrogen-doped hierarchically porous carbon spheres for superior rate and power Zn-ion capacitors". Journal of Materials Chemistry A 9, n. 13 (2021): 8435–43. http://dx.doi.org/10.1039/d1ta01242h.

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N-doped hierarchically porous carbon spheres are fabricated for Zn-ion capacitors, and they possess isotropic Zn²⁺ diffusion routes and abundant active sites, resulting in minimized transport resistance for fast Zn²⁺ storage and high capacity.

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40

Krause-Rehberg, Reinhard, V. Bondarenko, J. Pöpping, Nicolaas Stolwijk, T. E. M. Staab e Ulf Södervall. "Observation of Vacancies during Zn Diffusion in GaP". Materials Science Forum 445-446 (gennaio 2004): 26–30. http://dx.doi.org/10.4028/www.scientific.net/msf.445-446.26.

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41

Jakieła, R., A. Barcz, E. Wegner e A. Zagojski. "Diffusion and activation of Zn implanted into InP:S". Vacuum 78, n. 2-4 (maggio 2005): 417–22. http://dx.doi.org/10.1016/j.vacuum.2005.01.059.

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42

Lyubin, V., M. Klebanov, A. Arsh, N. Froumin e A. V. Kolobov. "Photoinduced diffusion of Zn in chalcogenide glassy films". Journal of Non-Crystalline Solids 326-327 (ottobre 2003): 189–92. http://dx.doi.org/10.1016/s0022-3093(03)00413-7.

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43

Andrade Martins, Patricia de, e João Alberto Osso. "Thermal diffusion of 67Ga from irradiated Zn targets". Applied Radiation and Isotopes 82 (dicembre 2013): 279–82. http://dx.doi.org/10.1016/j.apradiso.2013.08.012.

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44

Glade, M., J. Hergeth, D. Grützmacher, K. Masseli e P. Balk. "Diffusion of Zn acceptors during MOVPE of InP". Journal of Crystal Growth 108, n. 3-4 (febbraio 1991): 449–54. http://dx.doi.org/10.1016/0022-0248(91)90221-p.

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45

Shewmon, Paul, Mahmoud Abbas e Glyn Meyrick. "Anomalously fast diffusion in the Fe-Zn System". Metallurgical Transactions A 17, n. 9 (settembre 1986): 1523–27. http://dx.doi.org/10.1007/bf02650088.

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46

HE, M., X. SU, F. YIN, J. WANG e Z. LI. "Periodic layered structure in Ni3Si/Zn diffusion couples". Scripta Materialia 59, n. 4 (agosto 2008): 411–13. http://dx.doi.org/10.1016/j.scriptamat.2008.04.015.

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47

Dzhafarov, T. D., F. Ongul e I. Karabay. "Formation of CdZnS thin films by Zn diffusion". Journal of Physics D: Applied Physics 39, n. 15 (21 luglio 2006): 3221–25. http://dx.doi.org/10.1088/0022-3727/39/15/001.

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48

Yoon, I. T., B. S. Jeong e H. L. Park. "Zn diffusion of In0.5Ga0.5P investigated by photoluminescence measurements". Thin Solid Films 300, n. 1-2 (maggio 1997): 284–88. http://dx.doi.org/10.1016/s0040-6090(96)09466-7.

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49

Zou, W. X., G. A. Vawter, J. L. Merz e L. A. Coldren. "Behavior of SiNxfilms as masks for Zn diffusion". Journal of Applied Physics 62, n. 3 (agosto 1987): 828–31. http://dx.doi.org/10.1063/1.339714.

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50

Harrison, I., H. P. Ho, B. Tuck, M. Henini e O. H. Hughes. "Zn diffusion-induced disorder in AlAs/GaAs superlattices". Semiconductor Science and Technology 4, n. 10 (1 ottobre 1989): 841–46. http://dx.doi.org/10.1088/0268-1242/4/10/002.

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