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Готові списки джерел за темами / Optical and electrophysical properties / Статті в журналах

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Optical and electrophysical properties.

Статті в журналах з теми "Optical and electrophysical properties"

Автор: Grafiati

Опубліковано: 28 травня 2022

Оновлено: 31 липня 2025

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1

Kukhta, Alexander V., Eduard E. Kolesnik, Anatoly I. Lesnikovich, Maria N. Nichik, Alexander N. Kudlash, and Svetlana A. Vorobyova. "Organic‐Inorganic Nanocomposites: Optical and Electrophysical Properties." Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry 37, no. 5 (2007): 333–39. http://dx.doi.org/10.1080/15533170701392396.

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2

Kukhta, A. V., E. E. Kolesnik, A. I. Lesnikovich, M. N. Nichick, D. V. Ritchik, and S. A. Vorobyova. "Optical and electrophysical properties of Ag–PEPC nanocomposites." Materials Science and Engineering: C 26, no. 5-7 (2006): 1012–16. http://dx.doi.org/10.1016/j.msec.2005.09.041.

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3

Zhumabekov, А. Zh, N. Kh Ibrayev, Е. V. Seliverstova, and G. B. Kamalova. "Preparation and study of electrophysical and optical properties of TiO2-GO nanocomposite material." Bulletin of the Karaganda University. "Physics" Series 94, no. 2 (2019): 54–60. http://dx.doi.org/10.31489/2019ph2/54-60.

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4

Sysoev, B. I., N. N. Bezryadin, and Yu K. Shlyk. "Electrophysical properties of In2Te2-iias heterojunctions." physica status solidi (a) 95, no. 2 (1986): K169—K173. http://dx.doi.org/10.1002/pssa.2210950262.

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5

Kukhta, A. V., E. E. Kolesnik, I. N. Kukhta, et al. "Optical and electrophysical properties of sulfur containing metal free phthalocyanine." Synthetic Metals 160, no. 21-22 (2010): 2361–65. http://dx.doi.org/10.1016/j.synthmet.2010.09.012.

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6

Bagaev, V. S., Yu V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. A. Shepel’. "Optical and electrophysical properties of defects in high-purity CdTe." Physics of the Solid State 52, no. 1 (2010): 37–42. http://dx.doi.org/10.1134/s1063783410010075.

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7

Кабанов, В. Ф., А. И. Михайлов та М. В. Гавриков. "Исследование электрофизических свойств квантовых точек антимонида индия: значение формы". Физика и техника полупроводников 55, № 3 (2021): 237. http://dx.doi.org/10.21883/ftp.2021.03.50601.9471.

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In this work, we studied the influence of the shape of the indium antimonide quantum dots of on some important electrophysical parameters by spectral characteristics analysis, transmission electron microscopy, scanning tunneling microscopy, a laser particle size analyzer, and scanning electron microscopy. It is shown that the real form of quantum dots (spherical and cubic models) at the same characteristic size will noticeably affect the energy spectrum of the investigated objects and, accordingly, their electrophysical and optical properties.

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8

Gaidar, G. P. "Electrophysical properties of compensated n-Germanium." Physica B: Condensed Matter 636 (July 2022): 413864. http://dx.doi.org/10.1016/j.physb.2022.413864.

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9

Youssef, Kh. "OPTICAL AND ELECTRICAL PROPERTIES OF VERTICAL MoS2 NANOSTRUCTURES." Izvestiya of Samara Scientific Center of the Russian Academy of Sciences 24, no. 6 (2022): 41–50. http://dx.doi.org/10.37313/1990-5378-2022-24-6-41-50.

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Ultrathin two-dimensional layered crystalline films of molybdenum disulfide have unique electrical properties and can be used in solar cells, photoelectric converters, thermoelectric and electrochromic devices. The highest quality thin films of molybdenum disulfide can only be obtained by thermally activated chemical vapor deposition. However, the nature of the influence of the conditions of formation of MoS2 films on their composition, structure, structure, and properties has not been systematically studied and remains unclear. In this regard, the task of establishing experimentally the main

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10

A.A., Mustafoev. "ELECTRONIC SPECTROSCOPY OF HETEROSYSTEM SI/CU SURFACES WITH NANOSCALE PHASES AND FILMS." MODERN SCIENCE AND RESEARCH 3, no. 2 (2024): 74–77. https://doi.org/10.5281/zenodo.10629056.

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<em>In this article, valence electron state density, energy band parameters, energetic, optical and electrophysical properties of metal oxide and silicide films with thickness ≤ 40 Å formed on Si/Cu surface during ion implantation and annealing were studied.</em>

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11

Chuchvaga, N., E. Bogdanova, A. Strelchuk, et al. "Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions." Materials Science Forum 740-742 (January 2013): 625–28. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.625.

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A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions (167 MeV) in wide range fluencies 4x109 –1x1011 cm-2 at temperatures 250C and 5000C are presented. After irradiation these samples were thermal annealed at 5000C for 30 min. Far-action effect at a depth of more than one order of magnitude of stopping distance was observed under Xe ions irradiation in 4H-SiC. An increase of the ion Xe fluencies increased the concentration of radiation-induced defects that resulted in rise of the compensation effect of conduc

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12

Permyakov, Dmitriy Sergeevich, Stanislav Ivanovich Rembeza, Tatiana Gennadevna Menshikova, Vladimir Evgenevich Polkovnikov, and Maksim Aleksandrovich Belykh. "Influence of Annealing on the Electrophysical Properties of Copper Oxide (II) Thin Film, Prepared by Sol-Gel Method." Nano Hybrids and Composites 28 (February 2020): 48–52. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.48.

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This article discusses the effect of annealing time at temperatures of 400 and 500 ° C on the electrophysical properties of CuO films prepared by the sol-gel method based on isopropyl alcohol, copper acetate and diethylamine. The film thickness was 440 nm. Phase composition, electrical resistance, conductivity type, optical properties of films are determined.

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13

Avramenko, V. P., T. V. Kruzina, A. Yu Kudzin, and G. Ch Sokolyanskii. "Peculiarities of electrophysical properties of Na0.5Bi0.5TiO3 single crystals." Ferroelectrics 174, no. 1 (1995): 71–75. http://dx.doi.org/10.1080/00150199508216935.

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14

Alekperov, Aydin. "PRODUCTION OF Ge1-xLnxS MONOCRYSTALS AND THEIR ELECTROPHYSICAL AND PHOTOELETRIC PROPERTIES." JOURNAL OF ADVANCES IN PHYSICS 10, no. 3 (2015): 2795–801. http://dx.doi.org/10.24297/jap.v10i3.1317.

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Among semiconductor materials wich can be citilized for recording optical information and holograms of considerable interest are layered materials.Inparticulas, GeSmonocrystals belong to them. A unique device of germanium sulphide that can contain a great quantity of lithium ionehaz been created recently of the University North Carolina. Such material is perfectly suitable as starting stock in manufacturing solar panels. Along with these propertiesÂ germaniummonosulphideposseffesÂ change-over and memory effects. To widen the scope of using GeSmonocrystal it was introduced into the matrix of at

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15

Baibulova, G. Sh, D. D. Karamov, A. F. Galiev, et al. "STUDY OF THE PHYSICOCHEMICAL FEATURES OF THE STRUCTURE AND ELECTRONIC PROPERTIES OF COPOLYARYLENE ETHER KETONE." Izvestia Ufimskogo Nauchnogo Tsentra RAN, no. 1 (March 12, 2024): 49–54. http://dx.doi.org/10.31040/2222-8349-2024-0-1-49-54.

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In this work model compounds for copolymers of polyarylene ether ketones (co-PAEK) were modeled and analyzed, and optical and electrophysical studies were carried out. Quantum chemical calculations of the structures were carried out using the density functional theory (DFT) method in the B3LYP/6-31+G(d) approximation. The optical properties of the films were studied using the optical absorption method in the UV-visible region. The study of the current-voltage characteristics and time dependences was carried out on the MPI ETS50 probe station.

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16

Bilenko, D. I., V. V. Galushka, E. A. Zharkova, I. B. Mysenko, D. V. Terin, and E. I. Khasina. "Electrophysical properties of mesoporous silicon passivated by iron." Semiconductors 47, no. 5 (2013): 657–61. http://dx.doi.org/10.1134/s1063782613050084.

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17

Kalinina, Evgenia V., Alexander A. Lebedev, Vitalii V. Kozlovski, V. V. Zabrodskiy, Anatoly M. Strel'chuk, and Irina P. Nikitina. "Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons." Materials Science Forum 963 (July 2019): 722–25. http://dx.doi.org/10.4028/www.scientific.net/msf.963.722.

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Comparative studies of the structural, electrophysical properties and spectral sensitivity of 4H-SiC photodetectors of ultraviolet radiation in the spectral range of 200-400 nm were carried out before and after electron irradiations. Photodetectors with Cr Schottky barriers with thickness of 20 nm and 8 mm diameter were formed on n-4H-SiC CVD epitaxial layers with a thickness of 5 μm and concentration Nd-Na= (1-4) х1014 cm-3. Cr/4H-SiC photodiodes were irradiated by electrons at 0.9 MeV energy with doses (0.2-1) x1016 cm-2.

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18

Vinichenko, V. A., V. V. Buchenko, N. S. Goloborodko, V. V. Lendel, A. E. Lushkin, and V. N. Telega. "Optical and Electrophysical Properties of 95% In2O3 + 5% SnO2/ns-Si Heterostructure." Ukrainian Journal of Physics 61, no. 3 (2016): 240–47. http://dx.doi.org/10.15407/ujpe61.03.0240.

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19

Shaposhnikov, G. P., V. P. Kulinich, Yu M. Osipov, and R. P. Smirnov. "Optical and electrophysical properties of metal complexes of tetra(1,4-dithiacyclohexeno)porphyrazine." Chemistry of Heterocyclic Compounds 22, no. 9 (1986): 1036–39. http://dx.doi.org/10.1007/bf00478143.

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20

Zikrillaev, N. F., K. S. Ayupov, N. Narkulov, F. E. Urakova, G. A. Kushiev, and O. S. Negmatov. "Silicon with Binary Compounds GexSi1-x." Elektronnaya Obrabotka Materialov 60, no. 2 (2024): 50–58. http://dx.doi.org/10.52577/eom.2024.60.2.50.

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This paper presents the results of studies of the electrophysical, photoelectric, and magnetic properties of silicon samples doped by diffusion of germanium impurity atoms. It has been shown that impurity germanium atoms form in silicon binary compounds of the GexSi1-x type, the concentration of which varies with the depth of the original silicon. The developed diffusion technology of silicon doping with impurity germanium atoms made it possible to obtain a material with different concentrations of impurity germanium atoms, resistivity, and the type of conductivity. The optimal electrophysical

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21

Tazhibayev, S. K., M. K. Beisembekov, X. S. Rozhkova, et al. "Impact of the thickness of phthalocyanine films and its metal complexes on optical and electrical properties." Bulletin of the Karaganda University "Physics Series" 112, no. 4 (2023): 14–22. http://dx.doi.org/10.31489/2023ph4/14-22.

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The paper presents the results of a study of the structural, optical and electrophysical characteristics of phthalocyanine films and its metal complexes with different thicknesses. Films of phthalocyanine and its metal complexes were obtained on the conductive surface of the FTO by thermal evaporation in vacuum. It is shown that the observed broadening of the B and Q bands and the hypsochromic shift of the maxima in the absorption spectra are associated with the central atom. With a decrease in the thickness of MPc films, there is a decrease in the value of the half-width of the absorption spe

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22

Romanenko, A. I., O. B. Anikeeva, T. I. Buryakov, et al. "Electrophysical properties of multiwalled carbon nanotubes with various diameters." physica status solidi (b) 246, no. 11-12 (2009): 2641–44. http://dx.doi.org/10.1002/pssb.200982267.

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23

Kamarly, F. M., N. G. Guseinov, and A. Yu Yangirov. "Magnetic Susceptibility and Electrophysical Properties of SiTe Single Crystals." Physica Status Solidi (a) 111, no. 1 (1989): K17—K20. http://dx.doi.org/10.1002/pssa.2211110146.

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24

Aimukhanov, А. К., X. S. X.S. Rozhkova, А. К. Zeinidenov, and Т. E. Seisembekova. "Influence of surface structure and morphology of PEDOT: PSS on its optical and electrophysical characteristics." Bulletin of the Karaganda University. "Physics" Series 103, no. 3 (2021): 93–100. http://dx.doi.org/10.31489/2021ph3/93-100.

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This paper presents the results of a study of the effect of modification of the structure of the PEDOT: PSS polymer with hole conductivity on the optical and electrophysical properties of an organic solar cell. It was found that the modification of a polymer film with ethyl and isopropyl alcohols leads to a change in the morphology and roughness of the film surface. It has been determined that annealing of films in alcohol vapor promotes the formation of more uniform films. It is shown that upon modification of the PEDOT: PSS film in alcohol vapor the absorption spectrum shifts the absorption

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25

Mazurenko, R. V., S. L. Prokopenko, O. I. Oranska, G. M. Gunya, S. M. Makhno, and P. P. Gorbyk. "Electrophysical Properties of Polymeric Nanocomposites Based on Ferrite/Carbon Nanotube/Copper Iodide." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 41, no. 3 (2019): 289–86. http://dx.doi.org/10.15407/mfint.41.03.0289.

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26

Kogdas, Maksym. "Study of adsorption of household gas molecules on electrophysical properties of porous silicon." INNOVATIVE TECHNOLOGIES AND SCIENTIFIC SOLUTIONS FOR INDUSTRIES, no. 1 (27) (March 30, 2024): 246–55. http://dx.doi.org/10.30837/itssi.2024.27.246.

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Purpose. This research comprehensively investigates the adsorption of household gas molecules on porous silicon surfaces and its impact on the electrophysical properties of the material. The primary aim is to understand how the adsorption process influences the electrical conductivity and capacitance of porous silicon. Methodology. The study employs various electrophysical analysis methods to measure changes in the material's conductivity and capacitance caused by gas adsorption. Furthermore, the research explores optimal conditions for detecting household gas and establishes the correlation b

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27

Zamkovets, A. D., S. A. Tikhomirov, L. V. Baran, et al. "Influence of annealing on optical, morphological and electrophysical properties of granular silver nanostructures." Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series 60, no. 3 (2024): 242–51. http://dx.doi.org/10.29235/1561-2430-2024-60-3-242-251.

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The optical, morphological and electrophysical properties of silver nanostructures fabricated by electron beam evaporation and annealed at temperatures of 145 and 195 °C were studied. All samples are characterized by the presence of a pronounced surface plasmon absorption resonance band in the visible range and represent close-packed monolayers of nanoparticles, the average sizes of which increase from ~10 nm in the original samples to ~35–40 nm and ~45–60 nm in the annealed ones, depending on the annealing temperature. The influence of various factors on the spectral characteristics of sample

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28

Guralnik, I. R., and S. A. Samagin. "Electrophysical and optical properties of spherical and cylindrical liquid-crystal optically addressed lenses." Quantum Electronics 34, no. 7 (2004): 673–78. http://dx.doi.org/10.1070/qe2004v034n07abeh002822.

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29

Stroyuk, A. L., V. V. Shvalagin, and S. Ya Kuchmii. "Photochemical Synthesis, Spectral-Optical and Electrophysical Properties of Composite Nanoparticles of ZnO/Ag." Theoretical and Experimental Chemistry 40, no. 2 (2004): 98–104. http://dx.doi.org/10.1023/b:thec.0000028904.52818.e7.

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30

Bosak, N. A., A. N. Chumakov, M. V. Bushinsky, et al. "SURFACE MORPHOLOGY, OPTICAL, AND ELECTROPHYSICAL PROPERTIES OF La0.4Ba0.6CoO3 FILMS OBTAINED BY LASER DEPOSITION." Journal of Applied Spectroscopy 89, no. 5 (2022): 657–61. http://dx.doi.org/10.47612/0514-7506-2022-89-5-657-661.

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Nanostructured thin films on a silicon substrate have been obtained by the method of high-frequency repetitively pulsed (f ~ 10—15 кГц) laser action with a wavelength of 1.064 μm and a power density q = 54 MW/cm2 on La0.4Ba0.6CoO3 ceramics at a pressure in the vacuum chamber p = 2.2 Pa. The morphology of the obtained films was studied using atomic force microscopy. The features of the transmission spectra in the visible, near, and mid-IR regions are revealed. An analysis of the electrical properties of the La0.4Ba0.6CoO3 structure was carried out.

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31

Nabiyev, Asef, and J. Huseynov. "Growth of synthetic diamond films and their electrophysical properties." UNEC journal of engineering and applied sciences 3, no. 2 (2023): 76–85. http://dx.doi.org/10.61640/ujeas.2023.1211.

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The possibilities of formation of single-crystal homoepitaxial diamond structures grown by the method of vapor-phase chemical deposition are investigated. Optimal technological conditions for the formation of structures are suggested. The layer with p-type conductivity formation process depending on the temperature and time is determined. It was shown that applied thermal treatment method in hydrogen can be an alternative to the conventional method of H layer formation in microwave hydrogen plasma due to simpler and more reproducible. The profile distribution of boron atoms in a diamond crysta

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32

Myasoedova, Tatyana N., Olga V. Nedoedkova, and Galina E. Yalovega. "Electrophysical properties of composite materials based on graphene oxide and polyaniline." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 26, no. 1 (2024): 104–10. http://dx.doi.org/10.17308/kcmf.2024.26/11812.

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The Hall method was used to study the electrical characteristics of composite materials based on polyaniline (PANI), graphene oxide (GO), and manganese. A comparison of these characteristics of GO-PANI and GO-PANI-Mn composite systems with GO and PANI monomaterials was carried out. It was demonstrated that the electrical conductivity of composites was significantly higher than that of monomaterials and was determined by the charge carrier mobility. Based on UV-visible and IR spectroscopy data, it was shown that the optical band gap (Eg) of the GO-PANI composite increased with the addition of m

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33

Mochalov, L. A., M. A. Kudryashov, A. A. Logunov, et al. "Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties." Журнал физической химии 97, no. 1 (2023): 148–54. http://dx.doi.org/10.31857/s0044453723010211.

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Thin films of GaSх are obtained via plasma-enhanced chemical vapor deposition (PECVD) for the first time, while high-purity volatile derivatives of the corresponding macrocomponents (gallium chloride (GaCl3) and hydrogen sulfide (H2S)) are used as the initial materials. It is found that the nonequilibrium low-temperature plasma of an HF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) is the initiator of chemical transformations. Components of reactive plasma formed in the gas phase are studied via optical emission spectroscopy (OES). Structural and electrophysical properties of the obt

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34

Makarev, D. I., A. N. Reznichenko, A. N. Rybyanets, A. N. Shvetsova, and L. A. Reznichenko. "Structural features and electrophysical properties of the “piezoceramic-polymer” composites." Ferroelectrics 591, no. 1 (2022): 60–64. http://dx.doi.org/10.1080/00150193.2022.2041923.

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35

Goldman, E. I., V. G. Naryshkina, and G. V. Chucheva. "Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State." Physics of the Solid State 62, no. 8 (2020): 1380–85. http://dx.doi.org/10.1134/s1063783420080168.

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36

TCHMYREVA, V. V., A. T. PONOMARENKO, and V. G. SHEVCHENKO. "Electrophysical Properties of Polymer Based Composites with Barium Titanate (BaTiO3)." Ferroelectrics 307, no. 1 (2004): 233–42. http://dx.doi.org/10.1080/00150190490493276.

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37

Srivastava, Anoop Kumar, Seung Hee Lee, Myong-Hoon Lee, and R. Dabrowski. "Electrophysical Properties of an Antiferroelectric Liquid Crystal MOPB(H)PBC." Ferroelectrics 365, no. 1 (2008): 103–7. http://dx.doi.org/10.1080/00150190802064029.

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38

Golubev, E. A. "Electrophysical properties and structural features of shungite (natural nanostructured carbon)." Physics of the Solid State 55, no. 5 (2013): 1078–86. http://dx.doi.org/10.1134/s1063783413050107.

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39

Gavrilova, N. D., V. K. Novik, A. M. Lotonov, and S. V. Pavlov. "Proton mobility and electrophysical properties of ferroelectrics with hydrogen bonds." Ferroelectrics 167, no. 1 (1995): 163–68. http://dx.doi.org/10.1080/00150199508232309.

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40

Makhno, Stanislav, Xianpeng Wan, Oksana Lisova, et al. "Conducting Rubber Anisotropy of Electrophysical and Mechanical Properties." Polymers 17, no. 4 (2025): 492. https://doi.org/10.3390/polym17040492.

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The aim of this work was to determine the anisotropy of the electrophysical and mechanical properties of rubber reinforced with a hybrid filler CNTs&CB (carbon nanotubes and carbon black) as a function of CNT content and the technological parameters of the production process. A significant difference in electrical conductivity (σ) and dielectric permittivity (ε) in three perpendicular directions was found for CNT concentrations ranging from 0 to 0.007 in volume fraction. The highest values of σ and ε were observed in the calendering direction, with slightly lower values in the perpendicula

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41

Karimov, Denis, Irina Buchinskaya, Natalia Arkharova, et al. "Growth from the Melt and Properties Investigation of ScF3 Single Crystals." Crystals 9, no. 7 (2019): 371. http://dx.doi.org/10.3390/cryst9070371.

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ScF3 optical quality bulk crystals of the ReO3 structure type (space group P m 3 ¯ m , a = 4.01401(3) Å) have been grown from the melt by Bridgman technique, in fluorinating atmosphere for the first time. Aiming to substantially reduce vaporization losses during the growth process graphite crucibles were designed. The crystal quality, optical, mechanical, thermal and electrophysical properties were studied. Novel ScF3 crystals refer to the low-refractive-index (nD = 1.400(1)) optical materials with high transparency in the visible and IR spectral region up to 8.7 µm. The Vickers hardness of Sc

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42

Kukhta, A. V., A. E. Pochtenny, A. V. Misevich, et al. "Optical and electrophysical properties of nanocomposites based on PEDOT: PSS and gold/silver nanoparticles." Physics of the Solid State 56, no. 4 (2014): 827–34. http://dx.doi.org/10.1134/s1063783414040131.

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43

Bosak, N. A., A. N. Chumakov, M. V. Bushinsky, et al. "Surface Morphology and Optical and Electrophysical Properties of La0.4Ba0.6CoO3 Films Obtained by Laser Deposition." Journal of Applied Spectroscopy 89, no. 5 (2022): 865–68. http://dx.doi.org/10.1007/s10812-022-01439-w.

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44

Kutlimratov, A., M. A. Zufarov, R. R. Kabulov, and M. U. Xajiyev. "Structial, Electrophysical, and Optical Properties of ITO Films Produced by the Modified CVD Method." Applied Solar Energy 58, no. 4 (2022): 497–502. http://dx.doi.org/10.3103/s0003701x22040107.

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45

Olena, Chulieieva, and Zolotaryov Volodymyr. "Regulation of electrophysical properties of fireproof polymer compositions filled with hydromagnesite for cable products." Technology audit and production reserves 2, no. 1(46) (2019): 21–23. https://doi.org/10.15587/2312-8372.2019.161856.

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<em>The level of electrophysical properties of fireproof polymer compositions, depending on the influence of ingredients, has not been sufficiently studied. This is especially true of the effect of the modifier on the properties of the insulation and sheath of cable products. Therefore, the object of research is the electrophysical properties of fireproof composite materials: ethylene-vinyl acetate copolymer, filled with hydromagnesite. Composition of the copolymer with a melt flow index of 2.5 and 5 g/10 min, hydromagnesite with an average median particle diameter of 1.4 μm, aminosilanes w

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46

Gorst, Aleksandr, Kseniya Zavyalova, Sergey Shipilov, Vladimir Yakubov, and Aleksandr Mironchev. "Microwave Method for Measuring Electrical Properties of the Materials." Applied Sciences 10, no. 24 (2020): 8936. http://dx.doi.org/10.3390/app10248936.

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The article is about the development of a new non-destructive microwave method for measuring the electrophysical properties of materials, based on the method of transmission and reflection of a plane monochromatic wave through layered materials. The method has been verified by the results of numerical and field experiments. A data processing technique is described for obtaining complex values of dielectric and magnetic permeability based on an original measurement scheme. Based on the results of mathematical calculations, the laboratory model was created using an ultra-wideband antenna and a p

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47

Seo, Jeong-Ho, Jae-Won Huh, Ho-Jin Sohn, Eunjung Lim, and Tae-Hoon Yoon. "Analysis of Optical Performance Degradation in an Ion-Doped Liquid-Crystal Cell with Electrical Circuit Modeling." Crystals 10, no. 2 (2020): 55. http://dx.doi.org/10.3390/cryst10020055.

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We reported electrical circuit modeling to analyze the optical performance degradation in an ion-doped liquid-crystal (LC) cell, which exhibited advantages, such as excellent optical performance and simple switching process, but suffered from long-term reliability issues. When an electric field was applied to the cell for an extended period of time, the optical performance became nonuniform, and the haze in the opaque state decreased. By measuring the impedance and fitting the measured data by using an equivalent circuit model, we confirmed the changes of the parameters in the electrochemical

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48

Zhuravleva, T. S., A. V. Vannikov, O. L. Lazareva, et al. "Ion beam modification of electrophysical properties of polydiacetylene crystals." Synthetic Metals 41, no. 1-2 (1991): 244. http://dx.doi.org/10.1016/0379-6779(91)91052-c.

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49

Omarbekova, G. I., A. K. Аimukhanov, A. K. Zeinidenov, A. M. Zhakanova, B. R. Ilyassov, and А. М. Аlexeev. "Effect of the thickness and surface interface of In2O3 films on the transport and recombination of charges in a polymer solar cell." Bulletin of the Karaganda University. "Physics" Series 110, no. 2 (2023): 17–24. http://dx.doi.org/10.31489/2023ph2/17-24.

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Indium oxide films were obtained by spin coating from a solution of indium nitrate in ethylene glycol followed by annealing at 300 °C. The influence of the thickness and surface interface of In2O3 films on the optical and photo-electrophysical properties of a polymer solar cell has been studied. It is shown that the surface roughness of the film gradually decreases with a decrease in the thickness of the film to 60 nm, and a further decrease in the thickness of the films leads to its increase. The absorption spectra of the films were measured. The values of the optical band gap width are deter

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50

Zhilova, O. V., S. Yu Pankov, A. V. Sitnikov, Yu E. Kalinin, M. N. Volochaev, and V. A. Makagonov. "Structure and electrophysical properties of thin-film SnO2–In2O3 heterostructures." Journal of Materials Science: Materials in Electronics 30, no. 13 (2019): 11859–67. http://dx.doi.org/10.1007/s10854-019-01503-w.

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