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1

Lucca, D. A., K. Herrmann, M. J. Klopfstein, and F. Menelao. "Investigation of SiO2 thin films on Si substrates for use as standards for laser-acoustic measuring devices." International Journal of Materials Research 97, no. 9 (2006): 1212–15. http://dx.doi.org/10.1515/ijmr-2006-0190.

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Abstract We report on an investigation of the suitability of SiO2 thin films for use as calibration standards for the measurement of elastic modulus by laser-acoustic measuring devices. Film thicknesses for a range of thin film standards, originally developed for the calibration of ellipsometers, were obtained by X-ray reflectometry, ellipsometry, and metrological scanning force microscopy. Using the calibrated values of film thickness, a laser-acoustic method was used to obtain the elastic moduli of the thin films. Nanoindentation of the films, performed at two different laboratories was used
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2

Nolot, E., A. Lefevre, and J. N. Hilfiker. "Ellipsometry characterization of bulk acoustic wave filters." physica status solidi (c) 5, no. 5 (2008): 1168–71. http://dx.doi.org/10.1002/pssc.200777795.

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3

Urbanowicz, A. M., B. Meshman, D. Schneider, and M. R. Baklanov. "Stiffening and hydrophilisation of SOG low-kmaterial studied by ellipsometric porosimetry, UV ellipsometry and laser-induced surface acoustic waves." physica status solidi (a) 205, no. 4 (2008): 829–32. http://dx.doi.org/10.1002/pssa.200777749.

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4

Plikusiene, Ieva, Vincentas Maciulis, Arunas Ramanavicius, and Almira Ramanaviciene. "Spectroscopic Ellipsometry and Quartz Crystal Microbalance with Dissipation for the Assessment of Polymer Layers and for the Application in Biosensing." Polymers 14, no. 5 (2022): 1056. http://dx.doi.org/10.3390/polym14051056.

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Polymers represent materials that are applied in almost all areas of modern life, therefore, the characterization of polymer layers using different methods is of great importance. In this review, the main attention is dedicated to the non-invasive and label-free optical and acoustic methods, namely spectroscopic ellipsometry (SE) and quartz crystal microbalance with dissipation (QCM-D). The specific advantages of these techniques applied for in situ monitoring of polymer layer formation and characterization, biomolecule immobilization, and registration of specific interactions were summarized
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5

Chen, Hanying, Tianlin Li, Yifei Hao, et al. "Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene." Journal of Applied Physics 132, no. 15 (2022): 154301. http://dx.doi.org/10.1063/5.0106939.

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We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23 000 cm2 V−1 s−1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dep
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6

Plikusiene, Ieva, Vincentas Maciulis, Vilius Vertelis, et al. "Revealing the SARS-CoV-2 Spike Protein and Specific Antibody Immune Complex Formation Mechanism for Precise Evaluation of Antibody Affinity." International Journal of Molecular Sciences 24, no. 17 (2023): 13220. http://dx.doi.org/10.3390/ijms241713220.

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The profound understanding and detailed evaluation of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) spike (SCoV2-S) protein and specific antibody interaction mechanism is of high importance in the development of immunosensors for COVID-19. In the present work, we studied a model system of immobilized SCoV2-S protein and specific monoclonal antibodies by molecular dynamics of immune complex formation in real time. We simultaneously applied spectroscopic ellipsometry and quartz crystal microbalance with dissipation to reveal the features and steps of the immune complex formation.
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7

Bouzzit, Aziz, Loïc Martinez, Andres Arciniegas, Stéphane Serfaty, and Nicolas Wilkie-Chancellier. "Ellipsometry of surface acoustic waves using 3D vibrometry for viscoelastic material characterization by the estimation of complex Lamé coefficients versus the frequency." Applied Acoustics 228 (January 2025): 110312. http://dx.doi.org/10.1016/j.apacoust.2024.110312.

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8

Crooks, Richard M., Huey C. Yang, Laurel J. McEllistrem, Ross C. Thomas, and Antonio J. Ricco. "Interactions between self-assembled monolayers and an organophosphonate Detailed study using surface acoustic wave-based mass analysis, polarization modulation-FTIR spectroscopy and ellipsometry." Faraday Discussions 107 (1997): 285–305. http://dx.doi.org/10.1039/a704586g.

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9

B, Chandar Shekar, Sulana Sundari, Sunnitha S, and Sharmila C. "ARATION AND CHARACTERIZATION POLY (VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) COPOLYMER THIN FILMS FOR ORGANIC FERROELECTRIC FIELD EFFECT THIN FILM TRANSISTORS." Kongunadu Research Journal 2, no. 1 (2015): 7–10. http://dx.doi.org/10.26524/krj56.

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Polyvinylidene fluoride (PVDF) and Trifluoroethylene ((TrFE) are potential polymers which are used in acoustic transducers and electromechanical actuators because of their inherent piezoelectric response, as heat sensors because of their inherent pyroelectric response and as dielectric layer in organic thin filmtransistors. In the present study thin films of copolymer Poly(vinylidene fluoride-trifluoroethylene) were prepared by spin coating method for two different concentrations 2% to 8% and for various spin speeds from 2000 RPM to 5000 RPM. A P-type Si wafer was used as a substrate to deposi
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10

Nikolaev, Ivan V., Pavel V. Geydt, Nikolay G. Korobeishchikov, et al. "The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates." Nanomaterials 12, no. 4 (2022): 670. http://dx.doi.org/10.3390/nano12040670.

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In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the c
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11

Dautriat, Margaux, Pierre Montméat, and Frank Fournel. "(First Best Student Paper Award) Polymer to Silicon Direct Bonding for Microelectronics." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1591. http://dx.doi.org/10.1149/ma2023-02331591mtgabs.

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Direct bonding consists in spontaneously bringing into contact two solid surfaces without any intermediate liquid. A liquid is defined here as a being thick enough to have fluid characteristics. Silicon direct bonding is widely used in microelectronics, for instance for the production of silicon-on-insulator substrates (for transistor manufacturing). Direct bonding can be performed between identical surfaces, for example, two silicon substrates. However, direct bonding is also feasible with two different surfaces such as silicon and metal. Direct bonding of two solid materials requires very st
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12

Jenkins, T. E. "Multiple-angle-of-incidence ellipsometry." Journal of Physics D: Applied Physics 32, no. 9 (1999): R45—R56. http://dx.doi.org/10.1088/0022-3727/32/9/201.

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13

Deng, Yuanlong. "Polarization mixing error in transmission ellipsometry with two acousto-optical modulators." Optical Engineering 47, no. 7 (2008): 075601. http://dx.doi.org/10.1117/1.2955770.

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14

John, Joshua D., Shun Okano, Apoorva Sharma, et al. "Spectroscopic ellipsometry of amorphous Se superlattices." Journal of Physics D: Applied Physics 54, no. 25 (2021): 255106. http://dx.doi.org/10.1088/1361-6463/abf228.

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15

Fukarek, W., and A. von Keudell. "A novel setup for spectroscopic ellipsometry using an acousto‐optic tuneable filter." Review of Scientific Instruments 66, no. 6 (1995): 3545–50. http://dx.doi.org/10.1063/1.1145466.

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16

Kerepesi, Péter, Bernhard Rebhan, Matthias Danner, et al. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization." ECS Meeting Abstracts MA2023-02, no. 33 (2023): 1603. http://dx.doi.org/10.1149/ma2023-02331603mtgabs.

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There are different requirements for the production process and the final product of SiC-SiC wafer bonding. The manufacturing of devices that are sensitive to high temperature processing – due to broadened doping profiles and induced thermal stresses – requires room temperature bonding with high bond strength, while for electrical devices, it is mandatory that the bonding interface with a thin amorphous layer is oxide-free.[1] Reduced complexity of processes is also an important point for the final production. Hence, the goal of this work was to perform and characterize direct bonding of SiC-S
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17

Devos, A., F. Chevreux, C. Licitra, A. Chargui, and L. L. Chapelon. "Elastic and thermo-elastic characterizations of thin resin films using colored picosecond acoustics and spectroscopic ellipsometry." Photoacoustics 31 (June 2023): 100498. http://dx.doi.org/10.1016/j.pacs.2023.100498.

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18

Lyzwa, F., P. Marsik, V. Roddatis, C. Bernhard, M. Jungbauer, and V. Moshnyaga. "In situmonitoring of atomic layer epitaxy via optical ellipsometry." Journal of Physics D: Applied Physics 51, no. 12 (2018): 125306. http://dx.doi.org/10.1088/1361-6463/aaac64.

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19

Lizana, A., M. Foldyna, M. Stchakovsky, B. Georges, D. Nicolas, and E. Garcia-Caurel. "Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry." Journal of Physics D: Applied Physics 46, no. 10 (2013): 105501. http://dx.doi.org/10.1088/0022-3727/46/10/105501.

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20

Wang, Yakun, Gengzhao Xu, Sha Han, et al. "The spectroscopic ellipsometry measurement of non-polar freestanding GaN: comparison between isotropic and anisotropic models." Journal of Physics D: Applied Physics 55, no. 23 (2022): 235104. http://dx.doi.org/10.1088/1361-6463/ac598f.

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Abstract For anisotropic materials, the pseudo-dielectric function (DF) from isotropic model is often applied in spectroscopic ellipsometry data analysis instead of the DF from anisotropic model because of its simplicity. Whether this approximation is applicable depends on the discrepancy between the pseudo-DF and the DF, which we find to be related to the illumination configuration greatly. For the ellipsometry spectra obtained from a non-polar freestanding GaN in two configurations with the c-axis perpendicular and parallel to the incident plane respectively, both anisotropic model and isotr
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21

Jin, G., J. P. Roger, A. C. Boccara, and J. L. Stehle. "Probing dynamic processes in multilayered structures by stimulated spectroscopic ellipsometry." Journal of Physics D: Applied Physics 26, no. 11 (1993): 2096–99. http://dx.doi.org/10.1088/0022-3727/26/11/039.

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22

He, Qiong, Xiangdong Xu, Yu Gu, et al. "Vanadium oxide–carbon nanotube composite films characterized by spectroscopic ellipsometry." Journal of Physics D: Applied Physics 49, no. 40 (2016): 405105. http://dx.doi.org/10.1088/0022-3727/49/40/405105.

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23

Easwarakhanthan, T. "Nulling ellipsometry in the study of chemically treated Si surfaces." Journal of Physics D: Applied Physics 30, no. 7 (1997): 1151–56. http://dx.doi.org/10.1088/0022-3727/30/7/013.

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24

Hu, Zhigao, Genshui Wang, Zhiming Huang, Xiangjian Meng, and Junhao Chu. "Infrared optical properties of Bi3.25La0.75Ti3O12ferroelectric thin films using spectroscopic ellipsometry." Journal of Physics D: Applied Physics 35, no. 24 (2002): 3221–24. http://dx.doi.org/10.1088/0022-3727/35/24/311.

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25

Macková, Anna, Petr Malinský, Adéla Jagerová, et al. "Energetic Au ion beam implantation of ZnO nanopillars for optical response modulation." Journal of Physics D: Applied Physics 55, no. 21 (2022): 215101. http://dx.doi.org/10.1088/1361-6463/ac5486.

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Abstract Nanopillars of ZnO were implanted with Au-400 keV ions at various ion fluences from 1 × 1015 cm−2 to 1 × 1016 cm−2 and subsequently annealed at 750 °C for 15 min in order to reduce the implantation damage and to support Au nanoparticle (NP) aggregation. It was found that implantation-induced effects and thermal effects influence the Au NP coalescence as well as the quality of the ZnO nanopillars. Rutherford Back-Scattering spectrometry (RBS) showed the broader Au-depth profiles than it was theoretically predicted, but the Au-concentration maximum agrees well with prediction taking int
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26

Russo, O. L. "An accurate ellipsometric reflectance ratio method." Journal of Physics D: Applied Physics 18, no. 9 (1985): 1723–30. http://dx.doi.org/10.1088/0022-3727/18/9/003.

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27

Drury, M. R., and D. Bloor. "Measurement o the optical constants of polydiacetylene toluene sulphonate by ellipsometry." Journal of Physics D: Applied Physics 23, no. 1 (1990): 108–11. http://dx.doi.org/10.1088/0022-3727/23/1/018.

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28

Stewart, C. E., I. R. Hooper, and J. R. Sambles. "Surface plasmon differential ellipsometry of aqueous solutions for bio-chemical sensing." Journal of Physics D: Applied Physics 41, no. 10 (2008): 105408. http://dx.doi.org/10.1088/0022-3727/41/10/105408.

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29

Stagg, B. J., and T. T. Charalampopoulos. "A method to account for window birefringence effects on ellipsometry analysis." Journal of Physics D: Applied Physics 26, no. 11 (1993): 2028–35. http://dx.doi.org/10.1088/0022-3727/26/11/029.

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30

Chandra, Sharat, S. Tripura Sundari, G. Raghavan, and A. K. Tyagi. "Optical properties of CdTe nanoparticle thin films studied by spectroscopic ellipsometry." Journal of Physics D: Applied Physics 36, no. 17 (2003): 2121–29. http://dx.doi.org/10.1088/0022-3727/36/17/315.

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31

Chen, Chen, Dan Wu, Meng Yuan, et al. "Spectroscopic ellipsometry study of CsPbBr3 perovskite thin films prepared by vacuum evaporation." Journal of Physics D: Applied Physics 54, no. 22 (2021): 224002. http://dx.doi.org/10.1088/1361-6463/abe821.

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32

Langereis, E., S. B. S. Heil, H. C. M. Knoops, W. Keuning, M. C. M. van de Sanden, and W. M. M. Kessels. "In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition." Journal of Physics D: Applied Physics 42, no. 7 (2009): 073001. http://dx.doi.org/10.1088/0022-3727/42/7/073001.

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33

Leick, N., J. W. Weber, A. J. M. Mackus, M. J. Weber, M. C. M. van de Sanden, and W. M. M. Kessels. "In situspectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd." Journal of Physics D: Applied Physics 49, no. 11 (2016): 115504. http://dx.doi.org/10.1088/0022-3727/49/11/115504.

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34

Chao, Y. F., Wen-Chi Lee, C. S. Hung, and J. J. Lin. "A three-intensity technique for polarizer-sample-analyser photometric ellipsometry and polarimetry." Journal of Physics D: Applied Physics 31, no. 16 (1998): 1968–74. http://dx.doi.org/10.1088/0022-3727/31/16/005.

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35

Groth, Sebastian, Franko Greiner, Benjamin Tadsen, and Alexander Piel. "Kinetic Mie ellipsometry to determine the time-resolved particle growth in nanodusty plasmas." Journal of Physics D: Applied Physics 48, no. 46 (2015): 465203. http://dx.doi.org/10.1088/0022-3727/48/46/465203.

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36

Ovchinnikov, I. S. "Evaluation methods of mechanical properties for low-k dielectrics." Russian Technological Journal 9, no. 3 (2021): 40–48. http://dx.doi.org/10.32362/2500-316x-2021-9-3-40-48.

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This review introduces the study of state-of-art methods for assessing the mechanical properties of insulating materials with low dielectric constant. The main features of measuring Young’s modulus of thin films insulating materials with low dielectric constant are determined by usage of Brillouin light scattering, surface acoustic wave spectroscopy, picosecond laser-acoustic method, ellipsometric porosimetry, nanoindentation and atomic force microscopy in various modes. The author estimated the optimum lateral and optimum depth resolution for each above method. The review analyzes the degree
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37

Filippov, V. V., I. D. Lomako, and N. N. Sender. "Optical constants of TbFeO3measured by the immersion ellipsometry method at wavelength 0.63 mu m." Journal of Physics D: Applied Physics 27, no. 9 (1994): 1964–67. http://dx.doi.org/10.1088/0022-3727/27/9/023.

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38

Shirafuji, T., H. Motomura, and K. Tachibana. "Fourier transform infrared phase-modulated ellipsometry for in situ diagnostics of plasma–surface interactions." Journal of Physics D: Applied Physics 37, no. 6 (2004): R49—R73. http://dx.doi.org/10.1088/0022-3727/37/6/r01.

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39

Martín Valderrama, Carmen, Mikel Quintana, Ane Martínez-de-Guerenu, et al. "Insertion layer magnetism detection and analysis using transverse magneto-optical Kerr effect (T-MOKE) ellipsometry." Journal of Physics D: Applied Physics 54, no. 43 (2021): 435002. http://dx.doi.org/10.1088/1361-6463/ac0d2a.

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40

Boulouz, A., A. En Nacri, F. Pascal-Delannoy, B. Sorli, and L. Koutti. "Spectroscopic ellipsometry study ofxPbO–(1 −x)TiO2thin films elaborated by mixed reactive thermal co-evaporation." Journal of Physics D: Applied Physics 42, no. 24 (2009): 245304. http://dx.doi.org/10.1088/0022-3727/42/24/245304.

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41

Hikino, Shin-ichi, and Sadao Adachi. "Structural changes in ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry." Journal of Physics D: Applied Physics 37, no. 12 (2004): 1617–23. http://dx.doi.org/10.1088/0022-3727/37/12/005.

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42

Chen, Shuai, Xiong Zhang, Aijie Fan, et al. "Characterization of optical properties and thermo-optic effect for non-polar AlGaN thin films using spectroscopic ellipsometry." Journal of Physics D: Applied Physics 53, no. 20 (2020): 205104. http://dx.doi.org/10.1088/1361-6463/ab77e2.

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43

Liu, H. P., F. Lu, X. Z. Liu, et al. "Reconstruction of refractive index profiles of 3 MeV O2+ion-implanted MgO-doped LiNbO3using wet etching and ellipsometry." Journal of Physics D: Applied Physics 41, no. 6 (2008): 065302. http://dx.doi.org/10.1088/0022-3727/41/6/065302.

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44

Leick, N., J. W. Weber, A. J. M. Mackus, M. J. Weber, M. C. M. van de Sanden, and W. M. M. Kessels. "Erratum:In situspectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd (2016J. Phys. D: Appl. Phys.49115504)." Journal of Physics D: Applied Physics 49, no. 26 (2016): 269601. http://dx.doi.org/10.1088/0022-3727/49/26/269601.

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45

Kwon, Oh-Tae, Geonwoo Kim, Hyungjin Bae, Jaeyeol Ryu, Sikwan Woo, and Byoung-Kwan Cho. "Development of a Mercury Bromide Birefringence Measurement System Based on Brewster’s Angle." Sensors 23, no. 9 (2023): 4208. http://dx.doi.org/10.3390/s23094208.

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Mercury bromide (Hg2Br2) has been used to develop acousto-optic tunable filters (AOTFs) because it has several advantages, including a high refractive index, a broad optical bandwidth, and a relatively high figure of merit. Therefore, the measurement of its birefringence is a highly important factor for ensuring AOTF quality. However, for single crystals, it is difficult (at the millimeter scale) to quantify the birefringence using an ellipsometer, as this equipment is only designed to conduct measurements on thin films. In this study, a simple birefringence measurement system for Hg2Br2 was d
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46

Oblak, E., P. Riego, A. Garcia-Manso, et al. "Ultrasensitive transverse magneto-optical Kerr effect measurements using an effective ellipsometric detection scheme." Journal of Physics D: Applied Physics 53, no. 20 (2020): 205001. http://dx.doi.org/10.1088/1361-6463/ab7546.

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47

Peng, Liang, Kai Jiang, Jinzhong Zhang, et al. "Temperature-dependent phonon Raman scattering and spectroscopic ellipsometry of pure and Ca-doped SrxBa1−xNb2O6ferroelectric ceramics across the phase transition region." Journal of Physics D: Applied Physics 49, no. 3 (2015): 035307. http://dx.doi.org/10.1088/0022-3727/49/3/035307.

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48

Bousquet, Angélique, Fadi Zoubian, Joël Cellier, Christine Taviot-Gueho, T. Sauvage, and Eric Tomasella. "Structural and ellipsometric study on tailored optical properties of tantalum oxynitride films deposited by reactive sputtering." Journal of Physics D: Applied Physics 47, no. 47 (2014): 475201. http://dx.doi.org/10.1088/0022-3727/47/47/475201.

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49

Ravisy, W., M. Richard-Plouet, B. Dey, et al. "Unveiling a critical thickness in photocatalytic TiO2 thin films grown by plasma-enhanced chemical vapor deposition using real time in situ spectroscopic ellipsometry." Journal of Physics D: Applied Physics 54, no. 44 (2021): 445303. http://dx.doi.org/10.1088/1361-6463/ac1ec1.

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50

Agarwal, Lucky, K. Sambasiva Rao, Anshika Srivastava, and Shweta Tripathi. "Ytterbium doped ZnO nanolaminated planar waveguide for ring resonator applications." Journal of Physics D: Applied Physics 55, no. 22 (2022): 225106. http://dx.doi.org/10.1088/1361-6463/ac57dd.

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Abstract In the present paper, optical and structural properties of Yb doped ZnO (YZO) are studied for different Yb molar concentrations. The YZO thin films are deposited over the silicon substrate via the sol-gel spin coating method. The range of Yb doping content (concentration) is 0 mol% to 1.5 mol% in ZnO. The morphological variations of the deposited thin film are studied using XRD, FE-SEM, atomic force microscopy, and Ellipsometer. The obtained results indicate that the YZO thin film possesses a single crystalline structure with (1 0 0) as the preferential orientation. All samples have a
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