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Auswahl der wissenschaftlichen Literatur zum Thema „ANALYSIS OF CMOS“
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Zeitschriftenartikel zum Thema "ANALYSIS OF CMOS"
LIAO, HAIFANG, WAYNE WEI-MING DAI und RUI WANG. „A NEW CMOS DRIVER MODEL FOR TRANSIENT ANALYSIS AND POWER DISSIPATION ANALYSIS“. International Journal of High Speed Electronics and Systems 07, Nr. 02 (Juni 1996): 269–85. http://dx.doi.org/10.1142/s0129156496000116.
Der volle Inhalt der QuelleCheyette, Oren. „OAS Analysis for CMOs“. Journal of Portfolio Management 20, Nr. 4 (31.07.1994): 53–66. http://dx.doi.org/10.3905/jpm.1994.409485.
Der volle Inhalt der QuelleJomaah, Jalal, Majida Fadlallah und Gerard Ghibaudo. „Low Frequency Noise Analysis in Advanced CMOS Devices“. Advanced Materials Research 324 (August 2011): 441–44. http://dx.doi.org/10.4028/www.scientific.net/amr.324.441.
Der volle Inhalt der QuelleSheikh, Shireen T. „Comparative Analysis of CMOS OTA“. IOSR journal of VLSI and Signal Processing 1, Nr. 3 (2012): 01–05. http://dx.doi.org/10.9790/4200-0130105.
Der volle Inhalt der QuelleSchmitt-Landsiedel, D. „Yield Analysis of CMOS Ics“. Solid State Phenomena 57-58 (Juli 1997): 327–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.327.
Der volle Inhalt der QuelleDimitrijev, S., und N. Stojadinović. „Analysis of CMOS transistor instabilities“. Solid-State Electronics 30, Nr. 10 (Oktober 1987): 991–1003. http://dx.doi.org/10.1016/0038-1101(87)90090-6.
Der volle Inhalt der QuelleGajare, Milind, und Shedge D.K. „CMOS Trans Conductance based Instrumentation Amplifier for Various Biomedical Signal Analysis“. NeuroQuantology 20, Nr. 5 (30.04.2022): 53–60. http://dx.doi.org/10.14704/nq.2022.20.5.nq22148.
Der volle Inhalt der QuelleYao, Hong Tao, Zi Qiang Wang, Yuan Bao Gu und Zhen Gang Jiang. „Analysis of Black Level Calibration Algorithm for CIS“. Applied Mechanics and Materials 599-601 (August 2014): 1397–402. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.1397.
Der volle Inhalt der QuellePrajapati, Pankaj P., Anilkumar J. Kshatriya, Sureshbhai L. Bharvad und Abhay B. Upadhyay. „Performance analysis of CMOS based analog circuit design with PVR variation“. Bulletin of Electrical Engineering and Informatics 12, Nr. 1 (01.02.2023): 141–48. http://dx.doi.org/10.11591/eei.v12i1.4357.
Der volle Inhalt der QuelleCho, Won-ho, und Ki-sang Hong. „Affine Motion Based CMOS Distortion Analysis and CMOS Digital Image Stabilization“. IEEE Transactions on Consumer Electronics 53, Nr. 3 (August 2007): 833–41. http://dx.doi.org/10.1109/tce.2007.4341553.
Der volle Inhalt der QuelleDissertationen zum Thema "ANALYSIS OF CMOS"
Rabe, Dirk. „Accurate power analysis of integrated CMOS circuits on gate level“. [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962733520.
Der volle Inhalt der QuelleChan, Na-Han. „Rapid current analysis for CMOS digital circuits“. Thesis, McGill University, 1994. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=26380.
Der volle Inhalt der QuelleExtension tests on benchmark circuits containing up to 555 gates, which were analysed with CUREST using thousands of primary input patterns, demonstrate that the current analysis time is in the range of 1ms per gate per input pattern, using a SUN4/490 workstation with 32 Mb of main memory, running the SUN OS 4.103 operating system. The peak value of the total supply current, the current rise-time, and the time at which the peak occurs are usually computed to within 10% of HSPICE. However, appreciable errors often occur in the average current. This is because at the moment we do not have a good model for dealing with incomplete transitions associated with glitches in a CMOS gate.
Ruiz, Amador Dolly Natalia. „Multilevel aging phenomena analysis in complex ultimate CMOS designs“. Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENT002/document.
Der volle Inhalt der QuelleIntegrated circuits evolution is driven by the trend of increasing operating frequencies and downscaling of the device size, while embedding more and more complex functionalities in a single chip. However, the continuation of the device-scaling race generates a number of technology challenges. For instance, the downscaling of transistor channel lengths induce short-channel effects (drain-induced barrier lowering and punch-through phenomena); high electric field in the devices tend to increase Hot electron effect (or Hot Carrier) and Oxide Dielectric Breakdown; higher temperatures in IC products generates an increase of the Negative Bias Temperature Instability (NBTI) effect on pMOS devices. Today, it is considered that the above reliability mechanisms are ones of the main causes of circuit degradation performance in the field. This dissertation will address the Hot Carrier (HC) and NBTI impacts on CMOS product electrical performances. A CAD bottom-up approach will be proposed and analyzed, based on the Design–in Reliability (DiR) methodology. With this purpose, a detailed analysis of the NBTI and the HC behaviours and their impact at different abstraction level is provided throughout this thesis. First, a physical framework presenting the NBTI and the HC mechanisms is given, focusing on electrical parameters weakening of nMOS and pMOS transistors. Moreover, the main analytical HC and NBTI degradation models are treated in details. In the second part, the delay degradation of digital standard cells due to NBTI, HCI is shown; an in-depth electrical CAD analysis illustrates the combined effects of design parameters and HCI/NBTI on the timing performance of standard cells. Additionally, a gate level approach is developed, in which HC and NBTI mechanisms are individually addressed. The consequences of the degradation at system level are presented in the third part of the thesis. With this objective, data extracted from silicon measures are compared against CAD estimations on two complexes IPs fabricated on STCMOS 45nm technologies. It is expected that the findings of this thesis highly contribute to the understanding of the NBTI and HC reliability wearout mechanisms at the system level.STAR
Ranjan, Mahim. „Analysis and design of CMOS ultra wideband receivers“. Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3220380.
Der volle Inhalt der QuelleTitle from first page of PDF file (viewed September 8, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 121-123).
Rodnunsky, Nelson Lawrence. „Analysis of power dissipations in CMOS circuit designs“. Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0005/MQ34409.pdf.
Der volle Inhalt der QuellePhang, Khoman S. „CMOS optical preamplifier design using graphical circuit analysis“. Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/NQ58961.pdf.
Der volle Inhalt der QuelleYee, Gaylin Mildred. „An integrated micromachined CMOS spectrometer for biochemical analysis /“. May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Der volle Inhalt der QuelleSullivan, Patrick J. „Analysis and experimental results of RF CMOS mixers /“. Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1998. http://wwwlib.umi.com/cr/ucsd/fullcit?p9835390.
Der volle Inhalt der QuelleMuir, Keith Ross. „Mixed-mode microsystems for biological cell actuation and analysis“. Thesis, University of Edinburgh, 2017. http://hdl.handle.net/1842/28879.
Der volle Inhalt der QuelleBasedau, Philipp Michael. „Analysis and design of CMOS LC and crystal oscillators /“. Zürich, 1999. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13216.
Der volle Inhalt der QuelleBücher zum Thema "ANALYSIS OF CMOS"
Yusuf, Leblebici, Hrsg. CMOS digital integrated circuits: Analysis and design. 2. Aufl. Boston, MA: McGraw-Hill, 1998.
Den vollen Inhalt der Quelle findenYusuf, Leblebici, Hrsg. CMOS digital integrated circuits: Analysis and design. 3. Aufl. Boston: McGraw-Hill, 2003.
Den vollen Inhalt der Quelle findenKang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. New York: McGraw-Hill, 1996.
Den vollen Inhalt der Quelle findenKang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. 2. Aufl. Boston, Mass: McGraw-Hill, 1999.
Den vollen Inhalt der Quelle findenLi, Xiaopeng. Multi-standard CMOS wireless receivers: Analysis and design. Boston: Kluwer Academic Publishers, 2002.
Den vollen Inhalt der Quelle findenLi, Xiaopeng. Multi-standard CMOS wireless receivers: Analysis and design. Boston: Kluwer Academic Publishers, 2002.
Den vollen Inhalt der Quelle findenBasedau, Philipp Michael. Analysis and design of CMOS, LC, and crystal oscillators / Philipp Michael Basedau. Konstanz: Hartung-Gorre Verlag, 1999.
Den vollen Inhalt der Quelle findenCMOS voltage reference: An analytical and practical perspective. Hoboken: IEEE ; Wiley, 2013.
Den vollen Inhalt der Quelle findenMadrid, Philip E. Device design and process window analysis of a deep submicron CMOS VLSI technology. Reading, Mass: Addison-Wesley, 1992.
Den vollen Inhalt der Quelle findenNance, James Milton. Cmas tutorial workbook. Galveston, TX: National Oceanic and Atmospheric Administration, National Marine Fisheries Service, Southeast Fisheries Center, Galveston Laboratory, 1990.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "ANALYSIS OF CMOS"
Veendrick, Harry J. M. „Testing, Yield, Packaging, Debug and Failure Analysis“. In Nanometer CMOS ICs, 495–571. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-47597-4_10.
Der volle Inhalt der QuelleVeendrick, H. J. M. „Testing, yield, packaging, debug and failure analysis“. In Nanometer CMOS ICs, 589–686. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8333-4_10.
Der volle Inhalt der QuelleGharavi, Sam, und Babak Heydari. „mm-Wave CMOS Noise Analysis“. In Ultra High-Speed CMOS Circuits, 35–45. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0305-0_4.
Der volle Inhalt der QuelleBhushan, Manjul, und Mark B. Ketchen. „Data Analysis“. In Microelectronic Test Structures for CMOS Technology, 317–58. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9377-9_10.
Der volle Inhalt der QuelleHehn, Thorsten, und Yiannos Manoli. „Analysis of Different Interface Circuits“. In CMOS Circuits for Piezoelectric Energy Harvesters, 41–56. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9288-2_3.
Der volle Inhalt der QuelleHehn, Thorsten, und Yiannos Manoli. „Performance Analysis of the PSCE Chip“. In CMOS Circuits for Piezoelectric Energy Harvesters, 129–85. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9288-2_6.
Der volle Inhalt der QuelleVillar Piqué, Gerard, und Eduard Alarcón. „3-Level Buck Converter Analysis and Specific Components Models“. In CMOS Integrated Switching Power Converters, 133–70. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-8843-0_5.
Der volle Inhalt der QuelleRishab Mehra, Sarita Kumari und Aminul Islam. „Cross-Coupled Dynamic CMOS Latches: Scalability Analysis“. In Advances in Intelligent Systems and Computing, 307–15. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-2035-3_31.
Der volle Inhalt der QuelleAlioto, Massimo, Elio Consoli und Gaetano Palumbo. „Analysis and Comparison in the Energy-Delay-Area Domain“. In Flip-Flop Design in Nanometer CMOS, 119–73. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-01997-0_5.
Der volle Inhalt der QuelleBoukhayma, Assim. „Detailed Noise Analysis in Low-Noise CMOS Image Sensors“. In Ultra Low Noise CMOS Image Sensors, 61–83. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-68774-2_4.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "ANALYSIS OF CMOS"
Abbas, Haider Muhi, Mark Zwolinski und Basel Halak. „An application-specific NBTI ageing analysis method“. In 2015 International Workshop on CMOS Variability (VARI). IEEE, 2015. http://dx.doi.org/10.1109/vari.2015.7456553.
Der volle Inhalt der QuelleAbuayob, Eli, Evgeny Nisenboim, Amir Raveh, Baohua Niu und Tom Tong. „Complex Waveform Analysis for Advanced CMOS ICs“. In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0068.
Der volle Inhalt der QuelleKentaro Doi, Koichi Nakamura und Akitomo Tachibana. „Local-property analysis for modeling of gate insulator materials“. In 2006 International Workshop on Nano CMOS (IWNC). IEEE, 2006. http://dx.doi.org/10.1109/iwnc.2006.4570993.
Der volle Inhalt der QuelleNobuo Tanaka, Jun Yamasaki, Shin Inamoto und Koh Saitoh. „High-resolution TEM/STEM analysis of SiO2/Si(100) and La2O3/Si(100) interfaces“. In 2006 International Workshop on Nano CMOS (IWNC). IEEE, 2006. http://dx.doi.org/10.1109/iwnc.2006.4570981.
Der volle Inhalt der QuelleAlioto, Massimo, Elio Consoli und Gaetano Palumbo. „Analysis and comparison of variations in double edge triggered flip-flops“. In 2014 5th European Workshop on CMOS Variability (VARI). IEEE, 2014. http://dx.doi.org/10.1109/vari.2014.6957076.
Der volle Inhalt der QuelleGarcia-Redondo, Fernando, Marisa Lopez-Vallejo, Pablo Royer und Javier Agustin. „A tool for the automatic analysis of single events effects on electronic circuits“. In 2014 5th European Workshop on CMOS Variability (VARI). IEEE, 2014. http://dx.doi.org/10.1109/vari.2014.6957082.
Der volle Inhalt der QuelleRoger, Frederic, Anderson Singulani, Sara Carniello, Lado Filipovic und Siegfried Selberherr. „Global statistical methodology for the analysis of equipment parameter effects on TSV formation“. In 2015 6th International Workshop on CMOS Variability (VARI). IEEE, 2015. http://dx.doi.org/10.1109/vari.2015.7456561.
Der volle Inhalt der QuelleHatakeyama, Tomoyuki, Kazuyoshi Fushinobu und Ken Okazaki. „Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS“. In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73151.
Der volle Inhalt der QuelleLee, Ji Soo. „Improved analysis of CMOS photodiode“. In Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, herausgegeben von John C. Armitage. SPIE, 2017. http://dx.doi.org/10.1117/12.2283941.
Der volle Inhalt der QuelleKupreyev, Dmitriy. „Noise analysis of CMOS-memristive and CMOS-resistive current mirrors“. In 2018 International Conference on Computing and Network Communications (CoCoNet). IEEE, 2018. http://dx.doi.org/10.1109/coconet.2018.8476814.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "ANALYSIS OF CMOS"
Nguyen, Du Van. An ASIC Power Analysis System for Digital CMOS Design. Portland State University Library, Januar 2000. http://dx.doi.org/10.15760/etd.7249.
Der volle Inhalt der QuelleBalaban, Harold S., Paul M. Kodzwa, Andrew S. Rehwinkel, Gregory A. Davis und Patricia F. Bronson. Root Cause Analysis for the ATIRCM/CMWS Program. Fort Belvoir, VA: Defense Technical Information Center, Juni 2010. http://dx.doi.org/10.21236/ada555310.
Der volle Inhalt der QuelleBenmerrouche, Mo. 11-BM CMS Beamline Radiation Shielding Analysis. Office of Scientific and Technical Information (OSTI), August 2016. http://dx.doi.org/10.2172/1493166.
Der volle Inhalt der QuelleEchevarria-Doyle, Waleska, S. McKay und Susan Bailey. Sensitivity of sediment transport analyses in dam removal applications. Engineer Research and Development Center (U.S.), September 2023. http://dx.doi.org/10.21079/11681/47595.
Der volle Inhalt der QuelleAbercrombie, Daniel Robert, Hamed Bakhshiansohi, Sharad Agarwal, Jennifer Adelman-McCarthy, Andres Vargas Hernandez, Weinan Si, Lukas Layer und Jean-Roch Vlimant. Automatic log analysis with NLP for the CMS workflow handling. Office of Scientific and Technical Information (OSTI), November 2019. http://dx.doi.org/10.2172/1637601.
Der volle Inhalt der QuelleGu, Xinyu, Chongbo Zhao und Jianying Xi. The clinical manifestations and treatment strategies of congenital myasthenic syndrome associated with endplate development and maintenance deficiency: a systematic review and meta-analysis of case reports and case series. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, März 2023. http://dx.doi.org/10.37766/inplasy2023.3.0085.
Der volle Inhalt der QuellePeters, Valerie A., Alistair Ogilvie und Paul S. Veers. Wind energy Computerized Maintenance Management System (CMMS) : data collection recommendations for reliability analysis. Office of Scientific and Technical Information (OSTI), September 2009. http://dx.doi.org/10.2172/985499.
Der volle Inhalt der QuellePeters, Valerie A., und Alistair B. Ogilvie. Wind energy Computerized Maintenance Management System (CMMS) : data collection recommendations for reliability analysis. Office of Scientific and Technical Information (OSTI), Januar 2012. http://dx.doi.org/10.2172/1035328.
Der volle Inhalt der QuelleArhin, Stephen, Babin Manandhar und Adam Gatiba. Influence of Pavement Conditions on Commercial Motor Vehicle Crashes. Mineta Transportation Institute, Dezember 2023. http://dx.doi.org/10.31979/mti.2023.2343.
Der volle Inhalt der QuelleSvynarenko, Radion, Theresa L. Profant und Lisa C. Lindley. Effectiveness of concurrent care to improve pediatric and family outcomes at the end of life: An analytic codebook. Pediatric End-of-Life (PedEOL) Care Research Group, College of Nursing, University of Tennessee, Knoxville, 2022. http://dx.doi.org/10.7290/m5fbbq.
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