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Thematische Bibliographien / Gallium nitride / Dissertationen

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Dissertationen zum Thema „Gallium nitride“

Autor: Grafiati

Veröffentlicht am 4. Juni 2021

Zuletzt aktualisiert am 25. Juli 2025

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1

Li, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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2

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

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3

Mareš, Petr. "Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231443.

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Presented thesis is focused on the study of properties of Ga and GaN nanostructures on graphene. In the theoretical part of the thesis a problematics of graphene and GaN fabrication is discussed with a focus on the relation of Ga and GaN to graphene. The experimental part of the thesis deals with the depositions of Ga on transferred CVD-graphene on SiO2. The samples are analyzed by various methods (XPS, AFM, SEM, Raman spectroscopy, EDX). The properties of Ga on graphene are discussed with a focus on the surface enhanced Raman scattering effect. Furthermore, a deposition of Ga on exfoliated gr

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4

Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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5

Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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6

Popa, Laura C. "Gallium nitride MEMS resonators." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99296.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 187-206).<br>As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong piezoelectric coupling, these q

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7

Allums, Kimberly K. "Proton radiation and thermal stabilty [sic] of gallium nitride and gallium nitride devices." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013123.

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8

Holmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.

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9

Anderson, David Richard. "Phonon-limited electron transport in gallium nitride and gallium nitride-based heterostructures, 1760-1851." Thesis, University of York, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270104.

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10

Jackson, Helen C. "Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures." Thesis, Air Force Institute of Technology, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3629786.

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<p> Silicon nitride passivation on AlGaN\GaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaN\GaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 M

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11

Wang, Siping S. M. Massachusetts Institute of Technology. "Gallium Nitride phononic crystal resonator." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99831.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 41-42).<br>We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cav

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12

Zhang, Anping. "Gallium nitride-based electronic devices." [Gainesville, Fla.] : University of Florida, 2001. http://etd.fcla.edu/etd/uf/2001/anp1299/Title.PDF.

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Thesis (Ph. D.)--University of Florida, 2001.<br>Title from first page of PDF file. Document formatted into pages; contains vii, 145 p.; also contains graphics. Vita. Includes bibliographical references (p. 137-144).

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13

Deatcher, Christopher J. "Growth and characterisation of gallium nitride and indium gallium nitride by MOVPE for photonic applications." Thesis, University of Strathclyde, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.400334.

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14

Hoy, Daniel R. "Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.

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15

Mußer, Markus [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker." Freiburg : Universität, 2015. http://d-nb.info/1123482640/34.

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16

Shih, Andy. "Resonant tunneling in gallium nitride and aluminum nitride nanowire heterostructures." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=117124.

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III-V gallium nitride and aluminum nitride semiconductor nanowire heterostructures have emerged as promising candidates for numerous photonic device applications, ranging from the visible to the near-, mid- and far-infrared spectral range. In this work, the electrical properties of gallium nitride and aluminum nitride nanowire heterostructures were studied in the context of resonant tunneling. The negative differential resistance was observed in current-voltage measurements at room temperature and at 77 K for single nanowire devices as well as for large area devices, confirming the presence of

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17

Ho, Kwok-Lun. "Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride." Thesis, Massachusetts Institute of Technology, 1991. http://hdl.handle.net/1721.1/13142.

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18

Hess, Stefan. "Time-resolved spectroscopy of gallium nitride." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301575.

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19

MartiÌnez, Charles E. "Phonon interactions in gallium nitride nanostructures." Thesis, University of Nottingham, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.430567.

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20

Piedra, Daniel Ph D. Massachusetts Institute of Technology. "Development of gallium nitride power transistors." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/66454.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2011.<br>"November 2010." Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 78-79).<br>GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power devices optimized for their use in efficient power distribution systems in computer micro-processors. An existing process flow was used to fabr

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21

Yoon, Joonah. "Electronic properties of gallium nitride nanowires." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/45438.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2008.<br>Includes bibliographical references (leaves 123-131).<br>This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. Our GaN nanowires are grown by catalytic vapor growth methods, specifically hydride vapor phase epitaxy (HVPE) and chemical vapor deposition (CVD). TEM and XRD studies indicate that both of our HVPE and CVD grown GaN nanowires have the wu

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22

Zhu, Tongtong. "Nanoscale electrical characterization of gallium nitride." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609346.

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23

Owsley, Jack Lee III. "CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392.

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24

Shankar, Ramya. "Charge transport in gallium nitride nanowires." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0025011.

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25

Maffeis, Thierry Gabriel Georges. "Formation of metal-gallium nitride contacts." Thesis, Sheffield Hallam University, 2001. http://shura.shu.ac.uk/19998/.

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The influence of pre-metallisation surface preparation on the structural, chemical, and electrical properties of metal-nGaN interfaces has been investigated by X-ray Photoemission Spectroscopy (XPS), current-voltage measurement (I-V) and cross section Transmission Electron Microscopy (TEM). XPS analysis showed that the three GaN substrate treatments investigated, ex-situ HF etch, in-situ anneal in Ultra-High-Vacuum (UHV), and in-situ Ga reflux cleaning in UHV result in surfaces increasingly free of contaminants. Additionally, the three treatments are found to induce increasingly larger upward

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26

Stevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researche

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27

Baghani, Erfan. "Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43581.

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Dislocation lines affect the electrical and optical properties of semiconductors. In this research, the effect that the threading dislocation lines have on the free electron concentration and the electron mobility within gallium nitride and indium nitride is investigated. A formulation is developed for obtaining the screening space charge concentration and the corresponding electrostatic potential profile surrounding the dislocation lines. The resultant electrostatic potential profile has then been used to compute the associated electron mobility, limited by scattering from the charged dislo

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28

Cai, Xingmin. "Growth, doping and nanostructures of gallium nitride." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B35806394.

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29

Cai, Xingmin, and 蔡興民. "Growth, doping and nanostructures of gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B35806394.

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30

Winser, Andrew James. "Photoluminescence studies of arsenic-doped gallium nitride." Thesis, University of Nottingham, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405387.

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31

Flannery, Lorraine Barbara. "Electrical and optoelectronic properties of gallium nitride." Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268478.

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32

CALDAS, PAULA GALVAO. "NANOSCALE MECHANICAL DEFORMATION MECHANISMS OF GALLIUM NITRIDE." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2015. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=25364@1.

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PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO<br>CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO<br>FUNDAÇÃO DE APOIO À PESQUISA DO ESTADO DO RIO DE JANEIRO<br>Neste trabalho foi estudada a deformação mecânica em filmes de GaN por nanoindentação. Um nanoindentador foi usado para induzir a nucleação de defeitos mecânicos na superfície das amostras de forma controlada. A morfologia das indentações e a microestrutura dos defeitos foram estudados com o uso da microscopia de força atômica e microscopia eletrônica de transmissão . Os resultados mostraram que nos estágios iniciais

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33

Hari, Nikita. "Gallium nitride power electronics using machine learning." Thesis, University of Cambridge, 2019. https://www.repository.cam.ac.uk/handle/1810/288610.

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Gallium Nitride (GaN) power devices have the potential to jump-start the next generation of power converters which are smaller, faster, denser, and cheaper. They are thus expected to meet the increasing 21st Century need for power density and efficiency, while at the same time reducing pollution. With the commercialisation of 600 V GaN power devices, which the industry is keen to adopt, come significant challenges. Since there are a number of such devices which are new to the power community, there is a steep learning curve involved, with dispersed information on how best to employ these devic

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34

Yeh, Theresa (Theresa I. ). "Efficient wireless charging with gallium nitride FETs." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91881.

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Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 74-77).<br>Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of wireless charging systems is equivalent to reducing the sources of loss in the system. In this work, we focus on losses originating from the transistor. Resonant

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35

Giam, Louise R. "Gallium Nitride (GaN) quantum dot layer formation." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/35070.

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36

Sumner, Joy. "Scanning probe microscopy studies on Gallium nitride." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612451.

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37

Boudjelida, Boumedienne. "Metal-aluminium gallium nitride Schottky contacts formation." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19373/.

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X-ray photoelectron spectroscopy (XPS) has been used to investigate the effect of various surface cleaning procedures on Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30. Results show that wet chemical etch in a HF solution followed by a 600°C in-situ annealing under ultra-high vacuum (UHV) is very effective in removing oxygen from the surface. Downward band bending of 0.87 eV and 0.99 eV also occurs between the solvents-treated and the annealed Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30, respectively. Increasing in-situ temperature annealing in increments of 100°C up to 600°C shows a re-ord

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38

Krishnamoorthy, Sriram. "Gallium Nitride Based Heterostructure Interband Tunnel Junctions." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1409019988.

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39

RUSSO, STEFANO. "Gallium nitride-based device simulation and development." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2009. http://hdl.handle.net/2108/737.

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Dalla sua prima apparizione nei primi anni novanta il nitrurio di gallio (GaN) ha suscitato parecchio interesse come materiale molto promettente sia per applicazioni di optoelettronica sia per dispositivi a microonde ad alta potenza. Durante gli ultimi quindici anni la ricerca di tutto il mondo ha fatto un grosso sforzo per realizzare queste promesse. Applicazioni optoelettronici basati su GaN sono gia' stati commercializzati, mentre per i dispositivi a microonde ad alta potenza manca poco alla commercializzazione. Si stima che il valore mondiale del mercato di dispositivi GaN nel 2009 ammonte

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Dvořák, Martin. "Depozice Ga a GaN ultratenkých vrstev na grafenový substrát." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2013. http://www.nusl.cz/ntk/nusl-230846.

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This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers of gallium and gallium nitride. Graphene substrates were prepared by chemical vapour deposition in home-build high temperature reactor. After graphene transfer to silicon wafers, a series of chemical and thermal treatments were performed. Obtained samples were suitable for the study of growth of ultrathin layers of Ga and GaN. The growth of Ga and GaN was realized in ultra high vacuum conditions. Molecular beam epitaxy technique was used for gallium depositions together with ion source for nitrid

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Vacek, Petr. "Rozsáhlé defekty v nitridech Ga a Al." Doctoral thesis, Vysoké učení technické v Brně. CEITEC VUT, 2021. http://www.nusl.cz/ntk/nusl-447553.

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III-nitridy běžně krystalizují v hexagonální (wurtzitové) struktuře, zatímco kubická (sfaleritová) struktura je metastabilní a má pouze mírně vyšší energii. Jejich fyzikální vlastnosti jsou silně ovlivněny přítomností rozsáhlých defektů, které jsou v těchto dvou strukturách od sebe odlišné. U wurtzitových nitridů se jedná primárně o vláknové dislokace. Některé vláknové dislokace tvoří hluboké energetické stavy v zakázaném pásu, kterými ovlivňují elektrické a optoelektronické vlastnosti těchto materiálů. Oproti tomu, kubické nitridy obsahují množství vrstevných chyb, které představují lokální t

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42

Ju, Wentao. "Experimental Investigation of the Epitaxial Lateral Overgrowth of Gallium Nitride and Simulation of Gallium Nitride Metalorganic Chemical Vapor Deposition Process." Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1050589636.

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43

Harris, Brandon Eric. "Few cycle pulse laser induced damage studies of gallium oxide and gallium nitride." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1556891689968541.

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44

Motayed, Abhishek. "Gallium nitride nanowire based electronic and optical devices." College Park, Md. : University of Maryland, 2007. http://hdl.handle.net/1903/7254.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2007.<br>Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Farrant, Luke. "Gallium nitride processing for high power microwave devices." Thesis, Cardiff University, 2005. http://orca.cf.ac.uk/56118/.

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This thesis contains literature reviews relating to inductively coupled plasmas and their use in etching gallium nitride with chlorine based plasmas. The properties of gallium nitride, how these properties make gallium nitride a suitable material for high power microwave transistors and how such transistors will help improve the systems in which they might be used are also reviewed. In this thesis, a novel, non-destructive method of measurement of the conductivity of a semiconductor through measurement of the increase in the bandwidth of the resonant peak of a microwave dielectric resonator wh

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46

Schuller, Timothy Adam. "Gallium nitride sensor devices fabrication techniques and characterisation." Thesis, University of Bristol, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549688.

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A saccharide sensor was fabricated using an AlGaN/GaN heterostructure structure and a boronic-acid containing receptor. Parallel to this, photoelectrochemical (PEC) etching of Gallium Nitride (GaN) was employed both as a nanostructuring technique and as a method of rapid dislocation density enumeration. The device fabrication techniques necessary for the development of devices based on n-type GaN and its alloys were successfully implemented. A robust photolithographic mask capable of producing a variety of transistor and sensor structures was designed and fabricated. Surface Charge Lithography

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47

Sanz, Dorleta Cortaberria. "Fabrication and characterisation of novel gallium nitride lasers." Thesis, University of Bristol, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.445891.

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48

Chowdhury, Nadim. "p-Channel gallium nitride transistor on Si substrate." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/120405.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2018.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>Gallium Nitride, a wide bandgap (3.4 eV) semiconductor, has outstanding attributes, such as, high breakdown electric field, high electron mobility, which make it suitable for applications requiring high power and high operating frequencies. These intrinsic material properties have been the major driving force to the development of high speed and high power GaN based n-channel transistors (mostly

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49

Emiroglu, Deniz. "Dislocation related defects in silicon and gallium nitride." Thesis, Sheffield Hallam University, 2007. http://shura.shu.ac.uk/19626/.

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This thesis examines the kinetics of carrier capture and emission from dislocations in silicon (Si) and gallium nitride (GaN) using deep level transient spectroscopy (DLTS) and Laplace DLTS (LDLTS).Laplace DLTS is a powerful tool in characterising point defect related emission, but until now it has not been used extensively for investigating emission from extended defects. Using LDLTS, broad DLTS peaks arising from dislocations in Si containing oxidation-induced stacking faults (OISF) were resolved into multiple emission rates. For the first time, the change in emission rates from deep levels

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Brown, Dustin Anthony. "Novel Approaches to Ferroelectric and Gallium Nitride Varactors." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1398902436.

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