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Thematische Bibliographien / Magfest / Zeitschriftenartikel

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Zeitschriftenartikel zum Thema „Magfest“

Autor: Grafiati

Veröffentlicht am 4. Juni 2021

Zuletzt aktualisiert am 29. Juli 2025

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1

Chen, Wei-Ren, Yao-Chuan Tsai, Po-Jen Shih, Cheng-Chih Hsu, and Ching-Liang Dai. "Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process." Sensors 20, no. 17 (2020): 4731. http://dx.doi.org/10.3390/s20174731.

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The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs

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2

Lee, Dickie. "A Speedrun within a Rock Show." Journal of Sound and Music in Games 5, no. 4 (2024): 1–33. http://dx.doi.org/10.1525/jsmg.2024.5.4.1.

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Bit Brigade is a five-piece band that combines hard-rock adaptations of classic-era Nintendo Entertainment System (NES) soundtracks with live speedruns of the game, performed in concert as a rock show. This article uses Bit Brigade as a case study to develop a conceptual model for multimedia analysis that investigates audiovisual integration in novel ways. The essay comes in four theoretical sections followed by a full analysis of Bit Brigade’s speedrun of The Legend of Zelda. The first section explores Johan Huizinga’s magic circle and Kofi Agawu’s region of play to describe types of semiotic

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3

Zhao, Xiao Feng, Han Yu Guan, Mei Wei Lv, Yi Nan Bai, and Dian Zhong Wen. "Research of Magnetic Characteristics of the Split-Drain MAGFET Based on Nano-Polysilicon TFTs." Key Engineering Materials 645-646 (May 2015): 132–38. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.132.

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The split-drain magnetic field effect transistor (MAGFET) based on nanopolysilicon thin film transistor (TFT) is fabricated on <100> high resistivity silicon substrates by (complementary metal oxide semiconductor) CMOS technology in this paper. It contains source (S), drain1 (D1), drain2 (D2) and gate (G), and adopts nanopolysilicon thin films and nanopolysilicon/high resistivity silicon heterojunction interfaces as the magnetic field sensing layers. The influence of the channel size and shapes on the transistor, are studied to further improve its magnetic sensitivity. When the ratio of

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4

Rodriguez-Torres, R., E. A. Gutierrez-Dominguez, R. Klima, and S. Selberherr. "Analysis of Split-Drain MAGFETs." IEEE Transactions on Electron Devices 51, no. 12 (2004): 2237–45. http://dx.doi.org/10.1109/ted.2004.839869.

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5

Jankovic, N. D., T. Pesic, and D. Pantic. "Dynamic MAGFET model for sensor simulations." IET Circuits, Devices & Systems 1, no. 4 (2007): 270. http://dx.doi.org/10.1049/iet-cds:20060310.

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6

Mathieu, N., P. Giordano, and A. Chovet. "Si MAGFETs optimized for sensitivity and noise properties." Sensors and Actuators A: Physical 32, no. 1-3 (1992): 656–60. http://dx.doi.org/10.1016/0924-4247(92)80059-c.

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7

Shen-Iuan Liu, Jian-Fan Wei, and Guo-Ming Sung. "SPICE macro model for MAGFET and its applications." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 46, no. 4 (1999): 370–75. http://dx.doi.org/10.1109/82.755408.

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8

Qing, Guo, Zhu Dazhong, and Yao Yunruo. "CMOS magnetic sensor integrated circuit with sectorial MAGFET." Sensors and Actuators A: Physical 126, no. 1 (2006): 154–58. http://dx.doi.org/10.1016/j.sna.2005.10.004.

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9

Busatto, Giovanni, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, and Roberto Roncella. "MAGFET based current sensing for power integrated circuit." Microelectronics Reliability 43, no. 4 (2003): 577–83. http://dx.doi.org/10.1016/s0026-2714(03)00024-6.

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10

Santillan-Quiñonez, Gerard F., Victor Champac, and Roberto S. Murphy. "Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs." Solid-State Electronics 54, no. 11 (2010): 1239–45. http://dx.doi.org/10.1016/j.sse.2010.06.016.

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11

Dos Santos, M. V. Puydinger, M. Velo, R. D. Domingos, et al. "Electrodeposited nickel nanowires for magnetic-field effect transistor (MagFET)." Journal of Integrated Circuits and Systems 11, no. 1 (2016): 13–18. http://dx.doi.org/10.29292/jics.v11i1.425.

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The growing interest in magnetic nanowires (NWs) is connected to possibility of employing them for advanced applications in wide technological fields, such as data storage and biotechnology. In addition, NWs can be used as sensor devices for several applications, since they present high sensitivity to their environment. One of the major challenges when dealing with transport measurements in NWs is to trap them between electrodes, which allows electrical characterization and therefore fabrication of nanowire-based devices. Electrically neutral NWs can be deposited by dielectrophoresis (DEP) met

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12

Zhang, Bowei, Zhenyu Li, Can E. Korman, and Mona E. Zaghloul. "Rectangular cmos differential MAGFET biosensor for magnetic particle detection." IEEE Transactions on Magnetics 49, no. 7 (2013): 4052–55. http://dx.doi.org/10.1109/tmag.2013.2237893.

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13

Lau, Jack, Ping K. Ko, and Philip C. H. Chan. "Modelling of split-drain magnetic field-effect transistor (MAGFET)." Sensors and Actuators A: Physical 49, no. 3 (1995): 155–62. http://dx.doi.org/10.1016/0924-4247(95)01025-4.

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14

Zhang, Bowei, Can E. Korman, and Mona E. Zaghloul. "Circular MAGFET Design and SNR Optimization for Magnetic Bead Detection." IEEE Transactions on Magnetics 48, no. 11 (2012): 3851–54. http://dx.doi.org/10.1109/tmag.2012.2201139.

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15

Jungemann, C., D. Dudenbostel, and B. Meinerzhagen. "Hall factors of Si NMOS inversion layers for MAGFET modeling." IEEE Transactions on Electron Devices 46, no. 8 (1999): 1803–4. http://dx.doi.org/10.1109/16.777173.

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16

Ning, Feng, and Erik Bruun. "An offset-trimmable array of magnetic-field-sensitive MOS transistors (MAGFETs)." Sensors and Actuators A: Physical 58, no. 2 (1997): 109–12. http://dx.doi.org/10.1016/s0924-4247(96)01399-4.

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17

Lai, Shuk-Fun, Wing-Shan Tam, Chi-Wah Kok, and Hei Wong. "CMOS low power split-drain MAGFET based magnetic field strength sensor." Microelectronics Journal 100 (June 2020): 104759. http://dx.doi.org/10.1016/j.mejo.2020.104759.

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18

Aiello, Orazio, and Franco Fiori. "A new MagFET-based integrated current sensor highly immune to EMI." Microelectronics Reliability 53, no. 4 (2013): 573–81. http://dx.doi.org/10.1016/j.microrel.2012.10.013.

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19

Xiaofeng, Zhao, and Wen Dianzhong. "Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET." Journal of Semiconductors 30, no. 11 (2009): 114002. http://dx.doi.org/10.1088/1674-4926/30/11/114002.

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20

Santillan-Quiñonez, Gerard F., Roberto S. Murphy, and Victor H. Champac. "Equivalent Rectangular Active Region and SPICE Macro Model for Split-Drain MAGFETs." ECS Transactions 31, no. 1 (2019): 393–400. http://dx.doi.org/10.1149/1.3474184.

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21

Sung, Guo-Ming. "Error correction for transformed concave and convex MAGFETs with dc supply voltage." Sensors and Actuators A: Physical 117, no. 1 (2005): 41–49. http://dx.doi.org/10.1016/j.sna.2004.04.053.

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22

Oliver, Morag, Ayesha Ahmad, Nazila Kamaly, et al. "MAGfect: a novel liposome formulation for MRI labelling and visualization of cells." Organic & Biomolecular Chemistry 4, no. 18 (2006): 3489. http://dx.doi.org/10.1039/b605394g.

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23

Lindenburg, Laurens H., Jan L. Vinkenborg, Jorn Oortwijn, Stijn J. A. Aper, and Maarten Merkx. "MagFRET: The First Genetically Encoded Fluorescent Mg2+ Sensor." PLoS ONE 8, no. 12 (2013): e82009. http://dx.doi.org/10.1371/journal.pone.0082009.

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24

Hasan, S. M. Rezaul. "A novel 0.7V high sensitivity complementary differential MAGFET sensor for contactless mechatronic applications." Sensors and Actuators A: Physical 163, no. 1 (2010): 138–49. http://dx.doi.org/10.1016/j.sna.2010.08.009.

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25

Nakano, Kazuhiro, Toru Takahashi, and Shoji Kawahito. "Improving Temperature-Stability of CMOS Rotary Encoders Using a Parallel-Connected MAGFET Array." IEEJ Transactions on Sensors and Micromachines 126, no. 7 (2006): 312–17. http://dx.doi.org/10.1541/ieejsmas.126.312.

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26

Nakano, Kazuhiro, Toru Takahashi, and Shoji Kawahito. "Sensor array characteristics of MOS Hall-plates and the comparison with split-drain MAGFETs." IEICE Electronics Express 3, no. 13 (2006): 328–32. http://dx.doi.org/10.1587/elex.3.328.

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27

Sung, G. M., and S. I. Liu. "Error correction of transformed rectangular model of concave and convex MAGFETs with AC bias." IEE Proceedings - Circuits, Devices and Systems 151, no. 6 (2004): 593. http://dx.doi.org/10.1049/ip-cds:20040255.

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28

MONTERO, Juan Carlos, Laura YUSTE, Elena DÍAZ-RODRÍGUEZ, Azucena ESPARÍS-OGANDO, and Atanasio PANDIELLA. "Mitogen-activated protein kinase-dependent and -independent routes control shedding of transmembrane growth factors through multiple secretases." Biochemical Journal 363, no. 2 (2002): 211–21. http://dx.doi.org/10.1042/bj3630211.

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Solubilization of a number of membrane proteins occurs by the action of cell-surface proteases, termed secretases. Recently, the activity of these secretases has been reported to be controlled by the extracellular signal-regulated kinases 1 and 2 (ERK1/ERK2) and the p38 mitogen-activated protein kinase (MAPK) routes. In the present paper, we show that shedding of membrane-anchored growth factors (MAGFs) may also occur through MAPK-independent routes. In Chinese-hamster ovary cells, cleavage induced by protein kinase C (PKC) stimulation was largely insensitive to inhibitors of the ERK1/ERK2 and

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29

Stucchi-Zucchi, Lucas, Marcos Vinicius Puydinger dos Santos, Fernando César Rufino, and José Alexandre Diniz. "Silicon Nanowire Technologies: brief review, home-made solutions and future trends." Journal of Integrated Circuits and Systems 17, no. 2 (2022): 1–8. http://dx.doi.org/10.29292/jics.v17i2.614.

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The silicon nanowire (SiNW) is poised to become an industry standard on the upcoming technological nodes. It presents improved current drive and modulation, minimized footprint, stackability, and a host of different beneficial characteristics. The last few years of research have focused on solving the last remaining challenges of SiNW fabrication as they roll into commercial usage. Now, novel devices, as well as channel and device stacking for 3D VLSI applications is being studied. As well as how can the SiNW geometry can be harnessed for More Than Moore materials and applications. In this rev

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30

Zhao, Xiaofeng, Dianzhong Wen, Meiwei Lü, Hanyu Guan, and Gang Liu. "Fabrication and characterization of the split-drain MAGFET based on the nano-polysilicon thin film transistor." Journal of Semiconductors 35, no. 9 (2014): 094004. http://dx.doi.org/10.1088/1674-4926/35/9/094004.

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31

von Kluge, J. W. A., and W. A. Langheinrich. "An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G." IEEE Transactions on Electron Devices 46, no. 1 (1999): 89–95. http://dx.doi.org/10.1109/16.737446.

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32

Li, Z. Q., X. W. Sun, S. C. Tan, and C. M. Li. "A magnetic field-induced current-modulating opamp based on CMOS differential Tesla–Volt multiplier cell for MAGFET 1/f noise reduction." Sensors and Actuators A: Physical 118, no. 2 (2005): 292–97. http://dx.doi.org/10.1016/j.sna.2004.08.014.

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33

Tanaka, Yoshinobu, Eiichi Bando, Naoki Nagamachi, et al. "The Application of the Sandwich-type Dental Magnetic Attachment, "MAGFIT-600" in Various Clinical Cases." Nihon Hotetsu Shika Gakkai Zasshi 36, no. 3 (1992): 471–80. http://dx.doi.org/10.2186/jjps.36.471.

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34

Kusumadewi, An-Nissa, Lisda Damayanti, Rukiah, and Risdiana. "The Effect of Acid Solution on Dental Magnetic Attachment." Materials Science Forum 1028 (April 2021): 383–88. http://dx.doi.org/10.4028/www.scientific.net/msf.1028.383.

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Dental magnetic attachments used as a retainer for overdentures are encapsulated with a corrosion resistant casing to prevent corrosion of magnets. However, some studies reported that the casing still has a risk of corrosion. This study aims to determine the effect of acid solutions on magnetic attractive force, dissolving metal ions and corrosion of magnetic attachment surfaces. The dental magnetic attachment material used is Magfit DX 600 (Aichi, Japan). It consists of assembly and keeper. The assembly and keeper immersed in acid solutions with a pH of 3.8 and 5.8 for 7 and 14 days. After im

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35

"Factibilidad de integrar split-drain MAGFETs con alta sensibilidad en tecnología CMOS." Revista ECIPeru, January 10, 2019, 5–12. http://dx.doi.org/10.33017/reveciperu2011.0015/.

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Factibilidad de integrar split-drain MAGFETs con alta sensibilidad en tecnología CMOS Feasibility to integrate high-sensitivity split-drain MAGFETs in CMOS technology Gerard Franz Santillán Quiñonez, Víctor H. Champac Vilela y Roberto S. Murphy Arteaga Departamento de Engenharia Elétrica, Universidade Federal de Santa Catarina, Campus UniversitárioTrindade, Florianópolis, Santa Catarina, Brasil, C.P. 88040900, e-mail: gsantil@ieee.org Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica, Sta. Ma. Tonantzintla, Puebla, México, C.P. 72840. DOI: https://doi.org/10.

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36

Cayari, Christopher. "Learning strategies of video game music makers: Informal and school-based learning for online publication." International Journal of Music Education, February 16, 2022, 025576142110700. http://dx.doi.org/10.1177/02557614211070037.

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Music is an integral part of video games and the cultures that surround them, and the sound of video games enhances the user’s immersive game-play experience. Video game music (VGM) inspires performance and the creation of derivative music in both online and offline contexts. This study was conducted to explore how musicians perceived how helpful various learning strategies were for gaining the skills to publish VGM online. A cross-sectional, self-administered questionnaire was conducted at Super Music and Gaming Festival™ (Super MAGFest), an annual convention held near Washington DC, to captu

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37

Nakachai, Rattapong, Amporn Poyai, and Toempong Phetchakul. "High Sensitivity Non-split Drain MAGFET for Wireless Sensor Networks." Journal of Mobile Multimedia, August 20, 2020. http://dx.doi.org/10.13052/jmm1550-4646.16123.

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The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 μm) with all aspect ratio of width (

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38

García-Ramírez, P. J., and F. Sandoval-Ibarra. "Performance of a MFS-based mosfet for low temperature applications." Journal of Applied Research and Technology 3, no. 01 (2005). http://dx.doi.org/10.22201/icat.16656423.2005.3.01.566.

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A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase in carrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mT at 77K with low power consumption. Experimental results of a wide temperature range (20K< T

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39

E., Yosry, Fikry W., El-henawy A., and Marzouk M. "Compact Model of Dual-Drain MAGFETs Simulation." April 21, 2009. https://doi.org/10.5281/zenodo.1077768.

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This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved.

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40

Domingos, Renan Daniel, and Fanny Beron. "Medidas de transporte elétrico em nanoestruturas." Revista dos Trabalhos de Iniciação Científica da UNICAMP, no. 26 (February 15, 2019). http://dx.doi.org/10.20396/revpibic2620181202.

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Grande parte das pesquisas em materiais avançados esta vinculada a caracterizações elétricas, medidas de resistividade em função da temperatura, campo magnético e ângulo em relação ao campo magnético. Para a caracterização de materiais para aplicação em futuros dispositivos ou para melhor entendimento das propriedades de elétrica e magnéticas desses materiais. Essa área dentro da matéria condensada tem uma grande gama de aplicações. O desenvolvimento de novos dispositivos como MRAM, MagFET e SpinFET dependem desta caracterização inicial.

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"Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology." Sensors and Materials, 2009, 167. http://dx.doi.org/10.18494/sam.2009.580.

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42

Swe, Khine Thandar Nyunt, Chanvit Pamonchom, Amporn Poyai, and Toempong Phetchakul. "Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors." Journal of Mobile Multimedia, March 21, 2022. http://dx.doi.org/10.13052/jmm1550-4646.18416.

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This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the h

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