Thematische Bibliographien / Metal oxide semiconductors, Complimentary

Inhaltsverzeichnis

  1. Zeitschriftenartikel
  2. Dissertationen
  3. Bücher
  4. Buchteile
  5. Konferenzberichte
  6. Berichte der Organisationen

Auswahl der wissenschaftlichen Literatur zum Thema „Metal oxide semiconductors, Complimentary“

Autor: Grafiati
Veröffentlicht am 4. Juni 2021
Zuletzt aktualisiert am 9. Februar 2022

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Zeitschriftenartikel zum Thema "Metal oxide semiconductors, Complimentary"

1

Moreno, Mauricio. „Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications“. Optical Engineering 43, Nr. 10 (01.10.2004): 2448. http://dx.doi.org/10.1117/1.1786939.

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Serov, Alexander, Wiendelt Steenbergen und Frits de Mul. „Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor“. Optics Letters 27, Nr. 5 (01.03.2002): 300. http://dx.doi.org/10.1364/ol.27.000300.

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Martin, Lucy C., David T. Clark, Ewan P. Ramsay, A. E. Murphy, Robin F. Thompson, Dave A. Smith, R. A. R. Young, Jennifer D. Cormack, Nicolas G. Wright und Alton B. Horsfall. „Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures“. Materials Science Forum 717-720 (Mai 2012): 773–76. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.773.

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The recent development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high temperature applications, such as aerospace and well logging. This paper describes investigations into the properties of the gate dielectric as part of the development of the technology to realize monolithic fabrication of both n and p channel devices. A comparison of the oxide quality of the silicon carbide CMOS transistors is performed to examine the feasibility of this technology for high temperature circuitry.
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Lakestani, Fereydoun. „Full-field optical coherence tomography with a complimentary metal-oxide semiconductor digital signal processor camera“. Optical Engineering 45, Nr. 1 (01.01.2006): 015601. http://dx.doi.org/10.1117/1.2158968.

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Sederberg, S., V. Van und A. Y. Elezzabi. „Monolithic integration of plasmonic waveguides into a complimentary metal-oxide-semiconductor- and photonic-compatible platform“. Applied Physics Letters 96, Nr. 12 (22.03.2010): 121101. http://dx.doi.org/10.1063/1.3365020.

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Kim, Tae-Hoon, Cihan Yilmaz, Sivasubramanian Somu und Ahmed Busnaina. „3-D Perpendicular Assembly of Single Walled Carbon Nanotubes for Complimentary Metal Oxide Semiconductor Interconnects“. Journal of Nanoscience and Nanotechnology 14, Nr. 5 (01.05.2014): 3673–76. http://dx.doi.org/10.1166/jnn.2014.7942.

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Martin, Lucy Claire, David T. Clark, E. P. Ramsay, A. E. Murphy, R. F. Thompson, Dave A. Smith, R. A. R. Young, Jennifer D. Cormack, Nicholas G. Wright und Alton B. Horsfall. „Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures“. Materials Science Forum 740-742 (Januar 2013): 891–94. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.891.

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The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.
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Endoh, Tetsuo, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Masashi Kamiyanagi, Haruhiro Hasegawa, Takahiro Hanyu und Hideo Ohno. „The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits“. Japanese Journal of Applied Physics 49, Nr. 4 (20.04.2010): 04DM06. http://dx.doi.org/10.1143/jjap.49.04dm06.

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Fritze, M., J. Burns, P. W. Wyatt, C. K. Chen, P. Gouker, C. L. Chen, C. Keast et al. „Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, Nr. 6 (2000): 2886. http://dx.doi.org/10.1116/1.1314387.

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Rishton, S. A. „New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15, Nr. 6 (November 1997): 2795. http://dx.doi.org/10.1116/1.589730.

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Dissertationen zum Thema "Metal oxide semiconductors, Complimentary"

1

Trivedi, Vishal P. „Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies“. [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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Chinchani, Rameshwari. „Strained silicon/silicon-germanium heterostructure complimentary metal oxide semiconductor devices a simulation study of linearity /“. Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176143999.

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Song, Ping. „A 1.0-V CMOS class-E power amplifier for bluetooth applications /“. View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20SONG.

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Rae, Bruce R. „Micro-systems for time-resolved fluorescence analysis using CMOS single-photon avalanche diodes and micro-LEDs“. Thesis, University of Edinburgh, 2009. http://hdl.handle.net/1842/4219.

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Fluorescence based analysis is a fundamental research technique used in the life sciences. However, conventional fluorescence intensity measurements are prone to misinterpretation due to illumination and fluorophore concentration non-uniformities. Thus, there is a growing interest in time-resolved fluorescence detection, whereby the characteristic fluorescence decay time-constant (or lifetime) in response to an impulse excitation source is measured. The sensitivity of a sample’s lifetime properties to the micro-environment provides an extremely powerful analysis tool. However, current fluorescence lifetime analysis equipment tends to be bulky, delicate and expensive, thereby restricting its use to research laboratories. Progress in miniaturisation of biological and chemical analysis instrumentation is creating low-cost, robust and portable diagnostic tools capable of high-throughput, with reduced reagent quantities and analysis times. Such devices will enable point-of-care or in-the-field diagnostics. It was the ultimate aim of this project to produce an integrated fluorescence lifetime analysis system capable of sub-nano second precision with an instrument measuring less than 1cm3, something hitherto impossible with existing approaches. To accomplish this, advances in the development of AlInGaN micro-LEDs and high sensitivity CMOS detectors have been exploited. CMOS allows electronic circuitry to be integrated alongside the photodetectors and LED drivers to produce a highly integrated system capable of processing detector data directly without the need for additional external hardware. In this work, a 16x4 array of single-photon avalanche diodes (SPADs) integrated in a 0.35μm high-voltage CMOS technology has been implemented which incorporates two 9-bit, in-pixel time-gated counter circuits, with a resolution of 400ps and on-chip timing generation, in order to directly process fluorescence decay data. The SPAD detector can accurately capture fluorescence lifetime data for samples with concentrations down to 10nM, demonstrated using colloidal quantum dot and conventional fluorophores. The lifetimes captured using the on-chip time gated counters are shown to be equivalent to those processed using commercially available external time-correlated single-photon counting (TCSPC) hardware. A compact excitation source, capable of producing sub-nano second optical pulses, was designed using AlInGaN micro-LEDs bump-bonded to a CMOS driver backplane. A series of driver array designs are presented which are electrically contacted to an equivalent array of micro-LEDs emitting at a wavelength of 370nm. The final micro-LED driver design is capable of producing optical pulses of 300ps in width (full width half maximum, FWHM) and a maximum DC optical output power of 550μW, this is, to the best of our knowledge, the shortest reported optical pulse from a CMOS driven micro-LED device. By integrating an array of CMOS SPAD detectors and an array of CMOS driven AlInGaN micro-LEDs, a complete micro-system for time-resolved fluorescence analysis has been realised. Two different system configurations are evaluated and the ability of both topologies to accurately capture lifetime data is demonstrated. By making use of standard CMOS foundry technologies, this work opens up the possibility of a low-cost, portable chemical/bio-diagnostic device. These first-generation prototypes described herein demonstrate the first time-resolved fluorescence lifetime analysis using an integrated micro-system approach. A number of possible design improvements have been identified which could significantly enhance future device performance resulting in increased detector and micro-LED array density, improved time-gate resolution, shorter excitation pulse widths with increased optical output power and improved excitation light filtering. The integration of sample handling elements has also been proposed, allowing the sample of interest to be accurately manipulated within the micro-environment during investigation.
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Al-Ahmadi, Ahmad Aziz. „Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /“. Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

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Pesci, Federico M. „Metal oxide semiconductors employed as photocatalysts during water splitting“. Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.

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Photocatalytic water splitting has attracted significant interest in recent decades as it offers a clean and environmentally friendly route for the production of hydrogen. A key challenge remains the development of systems that employ abundant, non-toxic and inexpensive materials to dissociate water efficiently using sunlight. Titanium dioxide (TiO2), tungsten trioxide (WO3) and hematite (α-Fe2O3) are among the most studied photoanodes employed during water splitting because of the position of their valence band which is suitable for oxidising water to oxygen, and their low costs. However reported efficiencies for these materials are below the reported theoretical maximum values. A good understanding of the factors that are limiting the efficiency of these photoanodes is therefore desirable if improvements in the photocatalytic activity are to be achieved. This thesis is divided in four main sections. Chapters 3 and 4 describe transient absorption spectroscopy (TAS) studies in the microsecond-second timescales carried out on WO3 photoelectrodes and TiO2 nanowires respectively. TAS has been employed to follow the charge carriers dynamics in WO3 highlighting the presence of relatively long-lived holes (30 ms), which have been described as a requirement for the water oxidation reaction to take place. The electrons also appear to be long-lived (0.1 s), and this has been proposed to be due to slow electron transport through the film. TAS measurements have also been carried out on oxygen-deficient hydrogen-treated TiO2 nanowires, highlighting a more efficient suppression of the electron/hole recombination process in comparison with conventional anatase TiO2 photoanodes. Chapter 5 describes TAS and sum frequency generation (SFG) studies on TiO2 films which are designed to investigate the surface mechanisms of water oxidation. The dependence of the hole lifetime on the pH of the electrolytes employed has been examined by TAS and substantially faster decay rates have been found in highly alkaline solutions suggesting a change in the mechanism of water oxidation. Consequently, SFG has been employed in order to detect any possible intermediate at the interface TiO2/water. Initial measurements have provided the evidence of physisorbed and chemisorbed methanol (model probe) on the TiO2 surface and further studies at the TiO2/water interface have been carried out. Chapter 6 describes the development of a hybrid solar fuel reactor coupling a α-Fe2O3 based photoelecrochemical cell with luminescent solar concentrator plates. Initial tests have been carried out on a proof of principle prototype providing encouraging results.
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Gurcan, Zeki B. „0.18 [mu]m high performance CMOS process optimization for manufacturability /“. Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

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Wu, Ting. „Design of terabits/s CMOS crossbar switch chip /“. View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.
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Huang, Amy. „On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /“. Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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Özdağ, Pınar Güneş Mehmet. „Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/“. [s.l.]: [s.n.], 2005. http://library.iyte.edu.tr/tezler/master/fizik/T000397.pdf.

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Thesis (Master)--İzmir Institute of Technology, İzmir, 2005
Keywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)
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Bücher zum Thema "Metal oxide semiconductors, Complimentary"

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Heusler, Lucas Sebastian. Transistor sizing for timing optimization of combinational digital CMOS circuits. [Konstanz, Switzerland: Hartung-Gorre Verlag, 1990.

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Zhao, Yi. Wafer level reliability of advanced CMOS devices and processes. New York: Nova Science Publishers, 2008.

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Lancaster, Don. CMOS cookbook. 2. Aufl. Indianapolis, Ind: H.W. Sams, 1988.

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M, Berlin Howard, Hrsg. CMOS cookbook. 2. Aufl. Boston: Newnes, 1997.

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Nicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Hoboken, N.J: Wiley-Interscience, 2003.

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Pfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Konstanz [Germany]: Hartung-Gorre, 1999.

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Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.

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F, Hawkins Charles, Hrsg. CMOS electronics: How it works, how it fails. New York: IEEE Press, 2004.

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Helms, Harry L. High-speed (HC/HCT) CMOS guide. Englewood Cliffs, N.J: Prentice Hall, 1989.

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Kwon, Min-jun. CMOS technology. Hauppauge, N.Y: Nova Science Publishers, 2010.

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Buchteile zum Thema "Metal oxide semiconductors, Complimentary"

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Janotti, A., J. B. Varley, J. L. Lyons und C. G. Van de Walle. „Controlling the Conductivity in Oxide Semiconductors“. In Functional Metal Oxide Nanostructures, 23–35. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.

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Baratto, Camilla, Elisabetta Comini, Guido Faglia, Matteo Ferroni, Andrea Ponzoni, Alberto Vomiero und Giorgio Sberveglieri. „Transparent Metal Oxide Semiconductors as Gas Sensors“. In Transparent Electronics, 417–42. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch17.

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Fukumura, Tomoteru, und Masashi Kawasaki. „Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds“. In Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.

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Jongh, L. J. „Superconductivity by Local Pairs (Bipolarons) in Doped Metal Oxide Semiconductors“. In Mixed Valency Systems: Applications in Chemistry, Physics and Biology, 223–46. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3606-8_13.

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Ameen, Sadia, M. Shaheer Akhtar, Hyung-Kee Seo und Hyung Shik Shin. „Metal Oxide Semiconductors and their Nanocomposites Application Towards Photovoltaic and Photocatalytic“. In Advanced Energy Materials, 105–66. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118904923.ch3.

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Hartnagel, H. L., und V. P. Sirkeli. „The Use of Metal Oxide Semiconductors for THz Spectroscopy of Biological Applications“. In IFMBE Proceedings, 213–17. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_43.

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Körösi, L., K. Mogyorósi, R. Kun, J. Németh und I. Dékány. „Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates“. In From Colloids to Nanotechnology, 27–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-45119-8_5.

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Krik, Soufiane, Andrea Gaiardo, Matteo Valt, Barbara Fabbri, Cesare Malagù, Giancarlo Pepponi, Davide Casotti, Giuseppe Cruciani, Vincenzo Guidi und Pierluigi Bellutti. „Influence of Oxygen Vacancies in Gas Sensors Based on Metal-Oxide Semiconductors: A First-Principles Study“. In Lecture Notes in Electrical Engineering, 309–14. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37558-4_47.

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Ehara, Katsuo, und Renzo Hattori. „Pattern Analysis of Odors by Multiple Metal Oxide Semiconductors: Odor Analyzer with Human Sense of Smell“. In Olfaction and Taste XI, 723. Tokyo: Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68355-1_287.

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Shijeesh, M. R., M. Jasna und M. K. Jayaraj. „Metal-Oxide Transistors and Calculation of the Trap Density of States in the Band Gap of Semiconductors“. In Materials Horizons: From Nature to Nanomaterials, 303–18. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3314-3_10.

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Konferenzberichte zum Thema "Metal oxide semiconductors, Complimentary"

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Prejean, Seth J., und Joseph Shannon. „Backside Deprocessing of CMOS SOI Devices for Physical Defect and Failure Analysis“. In ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0099.

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Abstract This paper describes improvements in backside deprocessing of CMOS (Complimentary Metal Oxide Semiconductor) SOI (Silicon On Insulator) integrated circuits. The deprocessing techniques described here have been adapted from a previous research publication on backside deprocessing of bulk CMOS integrated circuits [1]. The focus of these improvements was to provide a repeatable and reliable methodology of deprocessing CMOS devices from the backside. We describe a repeatable and efficient technique to deprocess flip chip packaged devices and unpackaged die from the backside. While this technique has been demonstrated on SOI and bulk devices, this paper will focus on the latest SOI technology. The technique is useful for quick and easy access to the transistor level while preserving the metal interconnects for further analysis. It is also useful for deprocessing already thinned or polished die without removing them from the package. Removing a thin die from a package is very difficult and could potentially damage the device. This is especially beneficial when performing physical failure analysis of samples that have been back thinned for the purpose of fault isolation and defect localization techniques such as: LIVA (Laser Induced Voltage Alteration), TIVA (Thermally Induce Voltage Alteration), SDL [2] (Soft Defect Localization), and TRE (Time Resolved Emission) analysis. An important fundamental advantage of deprocessing SOI devices is that the BOX (Buried Oxide) layer acts as a chemical etch stop when etching the backside or bulk silicon. This leaves the transistor active silicon intact for analysis. Further delayering allows for the inspection of the active silicon, gate oxide, silicide, spacers, and poly. After deprocessing the transistor level, the metal layers are still intact and, in most cases, still electrically connected to the outside world. This can provide additional failure analysis opportunities.
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Seo, Young-Ho, Seung-Woo Do, Yong-Hyun Lee, Jae-Sung Lee, Jisoon Ihm und Hyeonsik Cheong. „Deuterium Process to Improve Gate Oxide Integrity in Metal-Oxide-Silicon (MOS) Structure“. In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666696.

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Lee, Dong Uk, Seon Pil Kim, Hyo Jun Lee, Dong Seok Han, Eun Kyu Kim, Hee-Wook You, Won-Ju Cho, Young-Ho Kim, Jisoon Ihm und Hyeonsik Cheong. „Study on transparent and flexible memory with metal-oxide nanocrystals“. In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666652.

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Satsangi, Vibha R. „Metal oxide semiconductors in PEC splitting of water“. In Solar Energy + Applications, herausgegeben von Jinghua Guo. SPIE, 2007. http://dx.doi.org/10.1117/12.734795.

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Balakumar, S., und R. Ajay Rakkesh. „Core/shell nano-structuring of metal oxide semiconductors and their photocatalytic studies“. In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790898.

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Ng, A., X. Liu, Y. C. Sun, A. B. Djurišić, A. M. C. Ng und W. K. Chan. „Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells“. In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848343.

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Zhang, Yuqing, Zhihe Xia, Jiapeng Li, Yang Shao, Sisi Wang, Lei Lu, Shengdong Zhang, Hoi-Sing Kwok und Man Wong. „Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors“. In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2020. http://dx.doi.org/10.1109/edtm47692.2020.9117958.

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Osseily, Hassan Amine, und Ali Massoud Haidar. „Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors“. In 2011 10th International Symposium on Signals, Circuits and Systems (ISSCS). IEEE, 2011. http://dx.doi.org/10.1109/isscs.2011.5978644.

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Zhang, Rui, Linsen Bie, Tze-Ching Fung, Eric Kai-Hsiang Yu, Chumin Zhao und Jerzy Kanicki. „High performance amorphous metal-oxide semiconductors thin-film passive and active pixel sensors“. In 2013 IEEE International Electron Devices Meeting (IEDM). IEEE, 2013. http://dx.doi.org/10.1109/iedm.2013.6724703.

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Osseily, Hassan Amine, und Ali Massoud Haidar. „Hexadecimal to binary conversion using multi-input floating gate complementary metal oxide semiconductors“. In 2015 International Conference on Applied Research in Computer Science and Engineering (ICAR). IEEE, 2015. http://dx.doi.org/10.1109/arcse.2015.7338134.

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Berichte der Organisationen zum Thema "Metal oxide semiconductors, Complimentary"

1

Wang, Wei. Complimentary Metal Oxide Semiconductor (CMOS)-Memristor Hybrid Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, Juni 2011. http://dx.doi.org/10.21236/ada544310.

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2

Bryant, R. E. Two Papers on a Symbolic Analyzer for MOS (Metal-Oxide Semiconductors) Circuits. Fort Belvoir, VA: Defense Technical Information Center, Dezember 1987. http://dx.doi.org/10.21236/ada188617.

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3

Hane, G. J., M. Yorozu, T. Sogabe und S. Suzuki. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators. Office of Scientific and Technical Information (OSTI), April 1985. http://dx.doi.org/10.2172/5621417.

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