Dissertationen: „Metal oxide semiconductors, Complimentary“

1

Trivedi, Vishal P. „Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies“. [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Chinchani, Rameshwari. „Strained silicon/silicon-germanium heterostructure complimentary metal oxide semiconductor devices a simulation study of linearity /“. Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176143999.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Song, Ping. „A 1.0-V CMOS class-E power amplifier for bluetooth applications /“. View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20SONG.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Rae, Bruce R. „Micro-systems for time-resolved fluorescence analysis using CMOS single-photon avalanche diodes and micro-LEDs“. Thesis, University of Edinburgh, 2009. http://hdl.handle.net/1842/4219.

Der volle Inhalt der Quelle

Annotation:

Fluorescence based analysis is a fundamental research technique used in the life sciences. However, conventional fluorescence intensity measurements are prone to misinterpretation due to illumination and fluorophore concentration non-uniformities. Thus, there is a growing interest in time-resolved fluorescence detection, whereby the characteristic fluorescence decay time-constant (or lifetime) in response to an impulse excitation source is measured. The sensitivity of a sample’s lifetime properties to the micro-environment provides an extremely powerful analysis tool. However, current fluorescence lifetime analysis equipment tends to be bulky, delicate and expensive, thereby restricting its use to research laboratories. Progress in miniaturisation of biological and chemical analysis instrumentation is creating low-cost, robust and portable diagnostic tools capable of high-throughput, with reduced reagent quantities and analysis times. Such devices will enable point-of-care or in-the-field diagnostics. It was the ultimate aim of this project to produce an integrated fluorescence lifetime analysis system capable of sub-nano second precision with an instrument measuring less than 1cm3, something hitherto impossible with existing approaches. To accomplish this, advances in the development of AlInGaN micro-LEDs and high sensitivity CMOS detectors have been exploited. CMOS allows electronic circuitry to be integrated alongside the photodetectors and LED drivers to produce a highly integrated system capable of processing detector data directly without the need for additional external hardware. In this work, a 16x4 array of single-photon avalanche diodes (SPADs) integrated in a 0.35μm high-voltage CMOS technology has been implemented which incorporates two 9-bit, in-pixel time-gated counter circuits, with a resolution of 400ps and on-chip timing generation, in order to directly process fluorescence decay data. The SPAD detector can accurately capture fluorescence lifetime data for samples with concentrations down to 10nM, demonstrated using colloidal quantum dot and conventional fluorophores. The lifetimes captured using the on-chip time gated counters are shown to be equivalent to those processed using commercially available external time-correlated single-photon counting (TCSPC) hardware. A compact excitation source, capable of producing sub-nano second optical pulses, was designed using AlInGaN micro-LEDs bump-bonded to a CMOS driver backplane. A series of driver array designs are presented which are electrically contacted to an equivalent array of micro-LEDs emitting at a wavelength of 370nm. The final micro-LED driver design is capable of producing optical pulses of 300ps in width (full width half maximum, FWHM) and a maximum DC optical output power of 550μW, this is, to the best of our knowledge, the shortest reported optical pulse from a CMOS driven micro-LED device. By integrating an array of CMOS SPAD detectors and an array of CMOS driven AlInGaN micro-LEDs, a complete micro-system for time-resolved fluorescence analysis has been realised. Two different system configurations are evaluated and the ability of both topologies to accurately capture lifetime data is demonstrated. By making use of standard CMOS foundry technologies, this work opens up the possibility of a low-cost, portable chemical/bio-diagnostic device. These first-generation prototypes described herein demonstrate the first time-resolved fluorescence lifetime analysis using an integrated micro-system approach. A number of possible design improvements have been identified which could significantly enhance future device performance resulting in increased detector and micro-LED array density, improved time-gate resolution, shorter excitation pulse widths with increased optical output power and improved excitation light filtering. The integration of sample handling elements has also been proposed, allowing the sample of interest to be accurately manipulated within the micro-environment during investigation.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Al-Ahmadi, Ahmad Aziz. „Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /“. Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Pesci, Federico M. „Metal oxide semiconductors employed as photocatalysts during water splitting“. Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.

Der volle Inhalt der Quelle

Annotation:

Photocatalytic water splitting has attracted significant interest in recent decades as it offers a clean and environmentally friendly route for the production of hydrogen. A key challenge remains the development of systems that employ abundant, non-toxic and inexpensive materials to dissociate water efficiently using sunlight. Titanium dioxide (TiO2), tungsten trioxide (WO3) and hematite (α-Fe2O3) are among the most studied photoanodes employed during water splitting because of the position of their valence band which is suitable for oxidising water to oxygen, and their low costs. However reported efficiencies for these materials are below the reported theoretical maximum values. A good understanding of the factors that are limiting the efficiency of these photoanodes is therefore desirable if improvements in the photocatalytic activity are to be achieved. This thesis is divided in four main sections. Chapters 3 and 4 describe transient absorption spectroscopy (TAS) studies in the microsecond-second timescales carried out on WO3 photoelectrodes and TiO2 nanowires respectively. TAS has been employed to follow the charge carriers dynamics in WO3 highlighting the presence of relatively long-lived holes (30 ms), which have been described as a requirement for the water oxidation reaction to take place. The electrons also appear to be long-lived (0.1 s), and this has been proposed to be due to slow electron transport through the film. TAS measurements have also been carried out on oxygen-deficient hydrogen-treated TiO2 nanowires, highlighting a more efficient suppression of the electron/hole recombination process in comparison with conventional anatase TiO2 photoanodes. Chapter 5 describes TAS and sum frequency generation (SFG) studies on TiO2 films which are designed to investigate the surface mechanisms of water oxidation. The dependence of the hole lifetime on the pH of the electrolytes employed has been examined by TAS and substantially faster decay rates have been found in highly alkaline solutions suggesting a change in the mechanism of water oxidation. Consequently, SFG has been employed in order to detect any possible intermediate at the interface TiO2/water. Initial measurements have provided the evidence of physisorbed and chemisorbed methanol (model probe) on the TiO2 surface and further studies at the TiO2/water interface have been carried out. Chapter 6 describes the development of a hybrid solar fuel reactor coupling a α-Fe2O3 based photoelecrochemical cell with luminescent solar concentrator plates. Initial tests have been carried out on a proof of principle prototype providing encouraging results.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Gurcan, Zeki B. „0.18 [mu]m high performance CMOS process optimization for manufacturability /“. Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Wu, Ting. „Design of terabits/s CMOS crossbar switch chip /“. View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

Der volle Inhalt der Quelle

Annotation:

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Huang, Amy. „On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /“. Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Özdağ, Pınar Güneş Mehmet. „Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/“. [s.l.]: [s.n.], 2005. http://library.iyte.edu.tr/tezler/master/fizik/T000397.pdf.

Der volle Inhalt der Quelle

Annotation:

Thesis (Master)--İzmir Institute of Technology, İzmir, 2005
Keywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)

APA, Harvard, Vancouver, ISO und andere Zitierweisen

11

Waghe, Anil Bhalchandra. „Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors“. Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/WagheAB2003.pdf.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

12

Du, Xiaohua. „Understanding and optimization of gas sensors based on metal oxide semiconductors“. Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3284441.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

13

Beglitis, N. „First-principles studies of surface defects of model metal-oxide semiconductors“. Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1324515/.

Der volle Inhalt der Quelle

Annotation:

In this thesis, three different model metal-oxide semiconductor systems will be discussed. First, the impact of hydroxyl vacancies, OHvac, on the geometry, electronic structure, and mechanical properties of single-walled aluminosilicate, (Al2SiO7H4)N, and aluminogermanate, (Al2GeO7H4)36, nanotubes is investigated. It is found that, with the exception of one OHvac localised on the outer wall of the (Al2GeO7H4)36 tube, these defects induce occupied and empty states in the band gap. Those states are found to be highly localised both in energy and in real space. Different magnetisation states are also found, depending on both the chemical composition and the specific side with respect to the tube cavity. The focus of the thesis then shifts to one of the most important and well-studied metaloxide surfaces, the rutile TiO2(110) surface. The reactivity of the surface is revisited, in view of the discrepancy between theory and experiment on the interaction between molecular oxygen and surface hydroxyls. This discrepancy is resolved by proposing that excess charge, associated with the oxygen vacancy and originating from Ti interstitials, is present on the surface. This surface charge opens new reaction channels not theoretically possible otherwise. The study utilises hybrid Density Functional Theory (DFT) calculations and Scanning Tunneling Microscopy (STM) simulations to provide evidence for the proposed surface charging. The last part of the thesis focuses on another surface of TiO2, the (011) surface. TiO2(011) has recently attracted attention due owing to its reported high photocatalytic activity. Several proposed structures of the surface are inconsistent with each other. Recent developments, based on Surface X-Ray Diffraction (SXRD) data and DFT simulations, now agree on a new structure. In this part a review of the various structures is provided and further evidence is given on the validity of the new proposal by providing further insight on the appearance of the surface on the STM.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

14

Bowen, Andrew. „Anodisation and study of oxide films formed on zirconium“. Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328407.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

15

Wu, Kehuey. „Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /“. [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

16

Yellai, Kashyap Williams John R. „Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique“. Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/YELLAI_KASHYAP_13.pdf.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

17

Shum, Roger Chi Fai Carleton University Dissertation Engineering Electrical. „A timing macro model for performance optimization of CMOS logic circuits“. Ottawa, 1992.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

18

Peleckis, Germanas. „Studies on diluted oxide magnetic semiconductors for spin electronic applications“. Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

19

Liu, Kou-chen. „Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication /“. Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

20

Ghamgosar, Pedram. „Advanced Metal Oxide Semiconductors for Solar Energy Harvesting and Solar Fuel Production“. Licentiate thesis, Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-64922.

Der volle Inhalt der Quelle

Annotation:

Increasing energy consumption and its environmental impacts make it necessary to look for alternative energy sources. Solar energy as huge energy source which is able to cover the terms sustainability is considered as a favorable alternative. Solar cells and solar fuels are two kinds of technologies, which make us able to harness solar energy and convert it to electricity and/or store it chemically. Metal oxide semiconductors (MOSs) have a major role in these devices and optimization of their properties (composition, morphology, dimensions, crystal structure) makes it possible to increase the performance of the devices. The light absorption, charge carriers mobility, the time scale between charge injection, regeneration and recombination processes are some of the properties critical to exploitation of MOSs in solar cells and solar fuel technology. In this thesis, we explore two different systems. The first one is a NiO mesoporous semiconductor photocathode sensitized with a biomimetic Fe-Fe catalyst and a coumarin C343 dye, which was tested in a solar fuel device to produce hydrogen. This system is the first solar fuel device based on a biomimetic Fe-Fe catalyst and it shows a Faradic efficiency of 50% in hydrogen production. Cobalt catalysts have higher Faradic efficiency but their performance due to hydrolysis in low pH condition is limited. The second one is a photoanode based on the nanostructured hematite/magnetite film, which was tested in a photoelectrochemical cell. This hybrid electrode improved the photoactivity of the photoelectrochemical cell for water splitting. The main mechanism for the improvement of the functional properties relies with the role of the magnetite phase, which improves the charge carrier mobility of the composite system, compared to pure hematite, which acts as good light absorber semiconductor. By optimizing the charge separation and mobility of charge carriers of MOSs, they can be a promising active material in solar cells and solar fuel devices due to their abundance, stability, non-toxicity, and low-cost. The future work will be focused on the use of nanostructured MOSs in all-oxide solar cell devices. We have already obtained some preliminary results on 1-dimensional heterojunctions, which we report in Chapter 3.3. While they are not conclusive, they give an idea about the future direction of the present research.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

21

Csutak, Sebastian Marius. „Optical receivers and photodetectors in 130nm CMOS technology“. Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3036588.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

22

Hildreth, Scott A. „Statistical SPICE parameter extraction for an N-Well CMOS process /“. Online version of thesis, 1995. http://hdl.handle.net/1850/12177.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

23

Carruthers, Colin. „Low noise operation in deep depletion mode MOS transistors“. Thesis, University of Edinburgh, 1989. http://hdl.handle.net/1842/10866.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

24

Ali, Danish. „Coulomb blockade in silicon-on-insulator“. Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321368.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

25

Upadhyaya, Parag. „High IIP2 CMOS doubly balanced quadrature sub-harmonic mixer for 5 GHz direct conversion receiver“. Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Spring2005/p%5Fupadhyaya%5F050505.pdf.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

26

Price, David T. „N-Well CMOS process integration /“. Online version of thesis, 1992. http://hdl.handle.net/1850/11261.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

27

John, Soji. „UHVCVD growth of Si₁-x-yGexCy epitaxial materials and application in heterostructure MOS devices /“. Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

28

Wu, Zhenghui. „Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells“. HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.

Der volle Inhalt der Quelle

Annotation:

Organic photovoltaics have shown much promise as an alternative photovoltaic technology for application in low-cost, large-scale and flexible solar cells. The application of metal oxides in organic solar cells (OSCs) and the impact of the properties of metal oxide/organic hetero-interfaces on cell performance have attracted a lot of attention. The metal oxide/organic interfaces have a crucial impact on interfacial charge transfer, charge collection and the overall device performance. This thesis is aimed at clarifying the principal interfacial phenomena occurring at the metal oxide/organic hetero-interfaces as well as effective engineering of those interfacial properties in OSCs. Photo-generated electrons and holes undergo different recombination processes, e.g., bimolecular recombination and trap-assisted recombination, before being collected by the electrodes in OSCs. Light intensity-dependent current densityvoltage (JV) characteristics of OSCs were analyzed to study the effect of recombination on charge collection efficiency. Effect of metal oxide/organic hetero-interfaces on charge transfers at organic/electrode interface was analyzed using transient photocurrent (TPC) measurements. Light intensity-dependent JV characteristics and TPC characteristics were applied to explore the charge recombination dynamics in OSCs with a metal oxide interlayer. This project concentrated on an in-depth investigation of the physics and the interface phenomena such as interfacial exciton dissociation, charge recombination processes, charge collection and interface engineering for high performing OSCs. The fundamentals about light intensity-dependent J-V characteristics for OSCs were summarized. The relationship between the charge recombination dynamics and light intensity-dependent J-V characteristics in OSCs were developed. Light intensity-dependent JSC, VOC and FF in OSCs made with different bulk-heterojunction (BHJ) systems of PTB7:PC70BM, PTB7-Th:PC70BM and PNB4:PC70BM were investigated. It is found that bimolecular recombination is the most prominent factor limiting the performance of OSCs. For freshly made OSCs fabricated based on the commercial polymers, e.g. PTB7 & PTB7-Th, and the new polymer PNB4 synthesized in-house, the trap-assisted charge recombination process in the BHJ active layer plays a relatively small role. This suggests that reducing the bimolecular recombination in OSCs through selecting proper materials and device structures is crucial for enhancing the power conversion efficiency (PCE) of OCSs. In this work, device structures which enable reducing bimolecular recombination in OSCs were investigated. The effect of ZnO interlayer at the interface between BHJ and Al cathode on the performance of PTB7:PC71BM based OSCs was studied by a combination of theoretical simulation and experimental characterization techniques, e.g., using light intensity-dependent JV characteristic and TPC measurements etc. It shows that ZnO interlayer has a profound effect on the performance of the PTB7:PC70BM-based OSCs, although it does not have a significant influence on the maximum absorptance in the active layer. The origin of the improvement in the cell performance is associated with the efficient charge collection due to the favorable exciton dissociation at the electrode/active layer interface. It is shown that the presence of the ZnO interlayer allows using a thinner active layer without moderating the absorption in the optically optimized control OSCs without the ZnO interlayer. OSCs with a ~10 nm thick ZnO interlayer are found to be favorable for the efficient charge collection, and thereby improving the cell performance. The TPC measurements also reveal that the dissociation of excitons at the metal/organic interface of regular OSCs hinders the electron collection. The unfavorable interfacial exciton dissociation can be removed by interposing a ZnO interlayer at the Al/organic interface, thus bimolecular recombination at the electrode/active layer interface can be reduced for improving the charge collection efficiency. PCE of the OSCs using ZnO interlayer was 6.5%, which is about 20% higher than a control cell (5.4%), having an identical device configuration without a ZnO interlayer. Solution-processed anode interlayer, a mixture of solution-processed MoOX and PEDOT:PSS, was adopted for application in inverted PTB7:PC71BM-based OSCs. The ratio of MoOX to PEDOT:PSS in the mixed solution was optimized for achieving the best cell performance. A PCE of 7.4% was obtained for OSCs with an optimal MoOX-PEDOT:PSS based interlayer, interposed between the BHJ active layer and Ag anode, which means 10% enhancement over the PCE of control cell made with an evaporated MoOX interlayer. Light intensity-dependent JV characteristics implied that the bimolecular recombination in OSCs with a MoOX-PEDOT:PSS interlayer was reduced. TPC measurements showed that the favorable exciton dissociation occurs at the organic/MoOX interface for the inverted OSCs. The favorable interfacial exciton dissociation generates an electrical field within a very small space near the interface, contributing significant additional photocurrent when the effective bias across the active layer in the OSCs is low, and thereby assisting in an efficient charge collection at the organic/electrode interface. In addition to the improvement in the cell performance, the solution-processed MoOX-PEDOT:PSS interlayer does not require a post-annealing treatment, which is beneficial for application in solution-processed tandem and flexible OSCs.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

29

Zeng, Xu, und 曾旭. „Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235475.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

30

Zeng, Xu. „Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics /“. Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1966980X.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

31

Gajera, Dipesh. „Process costing of microchip“. Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4726.

Der volle Inhalt der Quelle

Annotation:

Thesis (M.S.)--West Virginia University, 2006.
Title from document title page. Document formatted into pages; contains vii, 92 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 85-91).

APA, Harvard, Vancouver, ISO und andere Zitierweisen

32

Gilzad, Kohan Mojtaba. „Plasmonic Effect of Metal Nanoparticles Deposited on Wide-Band Gap Metal Oxide Nanowire Substrate“. Thesis, Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-64762.

Der volle Inhalt der Quelle

Annotation:

The application of nanowires (NWs) in solar cells (SCs) is of great interest due to their new promising aspects established in nanoelectronics. Semiconductors associated with plasmonic metal nanoparticles (NPs) such as Silver (Ag), Gold (Au) and Copper (Cu), show enhanced performance in solid state light absorbing SCs owing to plasmonic characteristic of noble metal NPs. Plasmonic NPs presented a significant role in development of visible light harvesting for many applications such as photocatalytic materials, photodynamic in Surface Enhanced Raman Spectroscopy (SERS) and photovoltaics (PVs). Integration of plasmonic NPs in semiconductor materials have opened the routes to expand new PV systems with high efficiency light absorption. In this project, we introduce the synthesis ZnO and TiO2 NWs used as N-type semiconducting substrates and various methods for isolating plasmonic metal NPs, which are later deposited on the semiconducting substrates. Vertically aligned ZnO and TiO2 NWs arrays were grown on the fluorine-doped tin oxide (FTO) conductive glass substrates via hydrothermal method at low temperature and the plasmonic NPs were synthesized by wet chemistry procedures and finally decorated on the NW films by using electrophoretic deposition. The impact of metal NPs loaded on the ZnO and TiO2 NWs substrates was studied by means of UV-vis spectroscopy and Photoluminescence (PL) spectroscopy. The absorbance spectra of individual NPs were recorded. Remarkably, the reflectance spectra of produced samples presented an enhancement in light absorption of the substrates after uptake of NPs on the ZnO and TiO2 NWs. The optical properties of the as grown ZnO NWs films decorated with Ag NPs (I) in direct contact with substrate and (II) in presence of an Al2O3 insulating spacer layer have been investigated. Both systems exhibited an enhancement in the UV band-edge emission from the ZnO when excited at 325 nm. In contrast, the broad bend defect emission of the samples did not have a significant change compare to bare ZnO substrates. The observed results suggested that the ZnO and TiO2 NWs decorated with plasmonic nanoparticles can boost the optical properties of MOs NWs substrates and hence effectively enhance the separation of photoexcited electron-hole pairs and photo-conversion applications.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

33

Richards, Winifred Mary. „An investigation of UV activated metal oxide semiconductors for the detection of volatiles“. Thesis, University of the West of England, Bristol, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.524714.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

34

Race, Nicholas. „Iron Polypyridyl Catalysts Assembled on Metal Oxide Semiconductors for Heterogeneous Photocatalytic Hydrogen Generation“. W&M ScholarWorks, 2018. https://scholarworks.wm.edu/etd/1530192812.

Der volle Inhalt der Quelle

Annotation:

Artificial Photosynthesis (AP) provides a promising method for the conversion of solar energy to chemical fuel in the form of H2 and O2. Development of heterogeneous systems in which H2 evolution catalysts are immobilized on metal oxide semiconductors is imperative for the large-scale implementation of AP systems. This research focuses on the immobilization of an active H2 evolution catalyst on large band gap semiconductors for the development and optimization of a highly active photocatalytic H2 generation system.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

35

Haynes, Keith M. „Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors“. Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc804970/.

Der volle Inhalt der Quelle

Annotation:

This dissertation has two intersecting foci; firstly, the discovery of a new methodology for the growth of high surface area cuprous oxide (Cu2O) substrates. Secondly, the synthesis and characterization of electron-accepting molecules, and their incorporation into excitonic solar cells (XSCs) using the Cu2O substrates as electrodes. Increasing the surface area of the semiconductor creates more locations for charge transfer to occur thus increasing the overall efficiency of the device. Zinc oxide (ZnO) has been widely studied, and can be easily grown into many different films with high surface area morphologies. The ZnO films serve as sacrificial templates that allow us to electrochemically grow new semiconductors with the same high surface area morphologies but composed of a material having more desirable electronic properties. A polymer can be applied over the surface of the ZnO nanorod films before etching the ZnO with a weak acid, thereby leaving a polymer nanopore membrane. Cathodic electrodeposition of Cu2O into the membrane nanopores gives Cu2O nanorods. Electron-accepting dyes are designed with tethers that allow for direct attachment to metal oxide semiconductors. After soaking, the semiconductor is coated with a monolayer of a dye and then the coated semiconductor films were made into various dye-sensitized solar cells (DSCs). These cells were studied to determine the electron transport properties at the semiconductor/sensitizer/electrolyte interface.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

36

Höhr, Timm. „Quantum-mechanical modeling of transport parameters for MOS devices /“. Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.

Der volle Inhalt der Quelle

Annotation:

Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.
Summary in German and English, text in English. Includes bibliographical references (p. 123-132).

APA, Harvard, Vancouver, ISO und andere Zitierweisen

37

Chun, Young Tea. „Charge transfer characteristic of zinc oxide nanowire devices and their applications“. Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708978.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

38

李加碧 und Stella Li. „Interface state generation induced by Fowler-Nordheim tunneling in mosdevices“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221403.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

39

Li, Stella. „Interface state generation induced by Fowler-Nordheim tunneling in mos devices /“. Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B20566487.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

40

Correll, Jeffrey. „The design and implementation of an 8 bit CMOS microprocessor /“. Online version of thesis, 1992. http://hdl.handle.net/1850/11649.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

41

Bachelu, Carol R. Carleton University Dissertation Engineering Electrical. „A Topological single-layer routing algorithm and its application to leaf cell synthesis“. Ottawa, 1992.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

42

Wemple, Ivan L. „Parasitic substrate modeling for monolithic mixed analog/digital circuit design and verification /“. Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/5944.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

43

Chen, Zengjun Williams John R. „Electrical properties of MOS devices fabricated on 4H carbon-face SiC“. Auburn, Ala, 2009. http://hdl.handle.net/10415/1858.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

44

Wu, Xu Sheng. „Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /“. View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

45

Modzelewski, Kenneth Paul. „DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /“. Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

46

Khan, Shamsul Arefin. „Deep sub-micron MOS transistor design and manufacturing sensitivity analysis /“. Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

47

Strasik, Michael. „Photoelectrochemical and photocatalytic investigation of semiconducting iron oxide for solar energy conversion /“. Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,167.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

48

Bialuschewski, Danny [Verfasser]. „Laser-assisted Modification of Metals and Metal Oxide Semiconductors as Photoactive Materials / Danny Bialuschewski“. München : Verlag Dr. Hut, 2020. http://d-nb.info/1219477699/34.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

49

Wilson, Jeffrey. „Analysis of power requirements inside of NMOS integrated circuits“. Full text open access at:, 1986. http://content.ohsu.edu/u?/etd,134.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

50

Mulfinger, G. Robert. „Investigation of induced charge damage on self-aligned metal-gate MOS devices /“. Online version of thesis, 2006. http://hdl.handle.net/1850/2036.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Dissertationen zum Thema „Metal oxide semiconductors, Complimentary“

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an