Thematische Bibliographien / Quantum dots. Semiconductors. Gallium nitride

Inhaltsverzeichnis

  1. Zeitschriftenartikel
  2. Dissertationen
  3. Bücher
  4. Buchteile
  5. Konferenzberichte

Auswahl der wissenschaftlichen Literatur zum Thema „Quantum dots. Semiconductors. Gallium nitride“

Autor: Grafiati
Veröffentlicht am 4. Juni 2021
Zuletzt aktualisiert am 6. Februar 2022

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an

Wählen Sie eine Art der Quelle aus:

Machen Sie sich mit den Listen der aktuellen Artikel, Bücher, Dissertationen, Berichten und anderer wissenschaftlichen Quellen zum Thema "Quantum dots. Semiconductors. Gallium nitride" bekannt.

Neben jedem Werk im Literaturverzeichnis ist die Option "Zur Bibliographie hinzufügen" verfügbar. Nutzen Sie sie, wird Ihre bibliographische Angabe des gewählten Werkes nach der nötigen Zitierweise (APA, MLA, Harvard, Chicago, Vancouver usw.) automatisch gestaltet.

Sie können auch den vollen Text der wissenschaftlichen Publikation im PDF-Format herunterladen und eine Online-Annotation der Arbeit lesen, wenn die relevanten Parameter in den Metadaten verfügbar sind.

Zeitschriftenartikel zum Thema "Quantum dots. Semiconductors. Gallium nitride"

1

Ahmad Fauzi, Dhiyauddin, Nahrul Khair Alang Md Rashid, Muhammad Rawi Mohamed Zin, and Nurul Fadzlin Hasbullah. "RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION." IIUM Engineering Journal 18, no. 1 (2017): 101–9. http://dx.doi.org/10.31436/iiumej.v18i1.653.

Der volle Inhalt der Quelle
Annotation:
In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation perfo
APA, Harvard, Vancouver, ISO und andere Zitierweisen
2

Murali, Amith K., Valerie J. Leppert, and Subhash H. Risbud. "Gallium nitride quantum dots in a silica xerogel matrix." Materials Science and Engineering: B 76, no. 3 (2000): 206–10. http://dx.doi.org/10.1016/s0921-5107(00)00452-9.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
3

Goodwin, Timothy J., Valerie J. Leppert, Subhash H. Risbud, Ian M. Kennedy, and Howard W. H. Lee. "Synthesis of gallium nitride quantum dots through reactive laser ablation." Applied Physics Letters 70, no. 23 (1997): 3122–24. http://dx.doi.org/10.1063/1.119109.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
4

Brown, J., C. Elsass, C. Poblenz, P. M. Petroff, and I. S. Speck. "Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots." physica status solidi (b) 228, no. 1 (2001): 199–202. http://dx.doi.org/10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co;2-w.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
5

Chaudhuri, Reet, Samuel James Bader, Zhen Chen, David A. Muller, Huili Grace Xing, and Debdeep Jena. "A polarization-induced 2D hole gas in undoped gallium nitride quantum wells." Science 365, no. 6460 (2019): 1454–57. http://dx.doi.org/10.1126/science.aau8623.

Der volle Inhalt der Quelle
Annotation:
A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The
APA, Harvard, Vancouver, ISO und andere Zitierweisen
6

Sinha, Godhuli, Subhendu K. Panda, Pratima Mishra, Dibyendu Ganguli, and Subhadra Chaudhuri. "Gallium nitride quantum dots in a nitrogen-bonded silica gel matrix." Journal of Physics: Condensed Matter 19, no. 34 (2007): 346209. http://dx.doi.org/10.1088/0953-8984/19/34/346209.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
7

Peres, M., A. J. Neves, T. Monteiro, et al. "Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice." Journal of Nanoscience and Nanotechnology 10, no. 4 (2010): 2473–78. http://dx.doi.org/10.1166/jnn.2010.1430.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
8

Burkhart, Casey C., Kinnari N. Patel, Jennifer G. G. Pagan, Phillip Barletta, and E. B. Stokes. "Surface Study of P-Type MBE Gallium Nitride Growth over CdSe Quantum Dots." ECS Transactions 3, no. 5 (2019): 469–75. http://dx.doi.org/10.1149/1.2357239.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
9

Kalden, J., C. Tessarek, K. Sebald, et al. "Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K." physica status solidi (a) 207, no. 6 (2010): 1428–30. http://dx.doi.org/10.1002/pssa.200983648.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
10

Dimos, Konstantinos, L'uboš Jankovič, Ioannis B. Koutselas, Michael A. Karakassides, Radek Zbořil, and Peter Komadel. "Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica." Journal of Physical Chemistry C 116, no. 1 (2011): 1185–94. http://dx.doi.org/10.1021/jp208011y.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
Mehr Quellen

Dissertationen zum Thema "Quantum dots. Semiconductors. Gallium nitride"

1

Olofsson, Karl-Johan. "Black-box optimization of simulated light extraction efficiency from quantum dots in pyramidal gallium nitride structures." Thesis, Linköpings universitet, Matematiska institutionen, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-162235.

Der volle Inhalt der Quelle
Annotation:
Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). To calculate the LEE for different pyramid designs, simulations can be performed using the FDTD method. Maximizing the LEE is treated as a black-box optimization problem with an interpolation method that utilizes radial basis functions. A simple heuristic is implemented and tested for various pyramid parameters. The LEE is sh
APA, Harvard, Vancouver, ISO und andere Zitierweisen
2

Huang, Sa. "GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration." Diss., Available online, Georgia Institute of Technology, 2003:, 2003. http://etd.gatech.edu/theses/available/etd-11242003-173234/unrestricted/huang%5Fsa%5F200312%5Fphd.pdf.

Der volle Inhalt der Quelle
Annotation:
Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Ferguson, Ian T., Committee Member ; Rhodes, William T., Committee Member ; Wang, Zhonglin, Committee Member ; Brown, April S., Committee Chair ; Jokerst, Nan M., Committee Co-Chair ; Doolittle, W. Alan, Committee Member. Vita. Includes bibliographical references.
APA, Harvard, Vancouver, ISO und andere Zitierweisen
3

Pan, Guiquan. "Colloidal gallium nitride quantum dots (GaN QDs) : synthesis and characterization /." View abstract, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:3248456.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
4

Wang, Yingjuan. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37090343.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
5

Bychkov, Andrey. "Quantum effects in artificial atoms." Thesis, University of Oxford, 2003. http://ora.ox.ac.uk/objects/uuid:93a68cff-9823-47d7-9505-b63806f1bbd4.

Der volle Inhalt der Quelle
Annotation:
This thesis contains a theoretical and experimental investigation of semiconductor quantum dots (artificial atoms). The first part presents a numerical study of spin effects in GaAs/AlAs modulation-doped quantum dots containing 0 to 50 electrons. A theoretical model is developed to calculate confinement potentials and ground-state electron density distributions using the Kohn-Sham local spin-density approximation. Spin polarization, defined as the difference between the up- and down-spin electron densities, is predicted to occur spontaneously in symmetric quantum dots and in quantum point cont
APA, Harvard, Vancouver, ISO und andere Zitierweisen
6

Wen, Yuan, and 文苑. "Theoretical and experimental studies of electronic states in InAs/GaAsself-assembled quantum dots." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224003.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
7

Wang, Yingjuan, and 王穎娟. "Comprehensive optical spectroscopic investigations of GaN epilayers and InGaN/GaN quantum structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37090343.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
8

Wen, Yuan. "Theoretical and experimental studies of electronic states in InAs/GaAs self-assembled quantum dots." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224003.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
9

Park, Gyoungwon. "GaAs-based long-wavelength quantum dot lasers /." Digital version, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008414.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
10

Wang, Hongjiang, and 王泓江. "Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29779911.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
Mehr Quellen

Bücher zum Thema "Quantum dots. Semiconductors. Gallium nitride"

1

Morkoç, Hadis. Gallium nitride materials and devices III: 21-24 January 2008, San Jose, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. SPIE, 2008.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen
2

Chyi, Jen-Inn. Gallium nitride materials and devices VII: 23-26 January 2012, San Francisco, California, United States. Edited by SPIE (Society). SPIE, 2012.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen
3

Morkoç, Hadis. Gallium nitride materials and devices IV: 26-29 January 2009, San Jose, California, United States. Edited by SPIE (Society). SPIE, 2009.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen
4

Chyi, Jen-Inn. Gallium nitride materials and devices V: 25-28 January 2010, San Francisco, California, United States. Edited by SPIE (Society). SPIE, 2010.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen
5

Kroutvar, Miroslav. Charge and spin storage in quantum dots. Verein zur Förderung des Walter Schottky Institut der Techn. Univ. München, 2006.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen
6

W, Litton Cole, and Society of Photo-optical Instrumentation Engineers., eds. Gallium nitride materials and devices: 23-25 January 2006, San Jose, California, USA. SPIE, 2006.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen
7

Hadis, Morkoç, Litton Cole W, and Society of Photo-optical Instrumentation Engineers., eds. Gallium nitride materials and devices II: 22-25 January 2007, San Jose, California, USA. SPIE, 2007.

Den vollen Inhalt der Quelle finden
APA, Harvard, Vancouver, ISO und andere Zitierweisen

Buchteile zum Thema "Quantum dots. Semiconductors. Gallium nitride"

1

Yoona, S. F., Z. Z. Suna, and K. C. Yewa. "Recent Progress in Dilute Nitride Quantum Dots." In Dilute Nitride Semiconductors. Elsevier, 2005. http://dx.doi.org/10.1016/b978-008044502-1/50005-6.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
2

Strittmatter, André. "Epitaxial growth of nitride quantum dots." In III-Nitride Semiconductors and their Modern Devices. Oxford University Press, 2013. http://dx.doi.org/10.1093/acprof:oso/9780199681723.003.0005.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
3

Suemune, Ikuo, Katsuhiro Uesugi, and Sasikala Ganapathy. "MOMBE Growth and Characterization of III–V-N Compounds and Application to InAs Quantum Dots." In Dilute Nitride Semiconductors. Elsevier, 2005. http://dx.doi.org/10.1016/b978-008044502-1/50004-4.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen

Konferenzberichte zum Thema "Quantum dots. Semiconductors. Gallium nitride"

1

Brault, Julien, Mohamed Al Khalfioui, Mathieu Leroux, et al. "DUV LEDs based on AlGaN quantum dots." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2576135.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
2

Mourad, D., S. Schulz, G. Czycholl, Marília Caldas, and Nelson Studart. "Electronic and Optical Properties of Group-III-Nitride Semiconductor Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295412.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
3

Kojima, Kazunobu, Hirotaka Ikeda, Kenji Fujito, and Shigefusa F. Chichibu. "Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere (Conference Presentation)." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2285374.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
4

Kawano, Takeshi, Satoshi Kako, Christian Kindel, and Yasuhiko Arakawa. "Annealing effect on spectral linewidth of hexagonal gallium nitride quantum dots." In 2007 International Nano-Optoelectronics Workshop. IEEE, 2007. http://dx.doi.org/10.1109/inow.2007.4302911.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
5

Juska, G., V. Dimastrodonato, L. O. Mereni, A. Gocalinska, and E. Pelucchi. "Tuning the optical properties of dilute nitride site controlled quantum dots." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848478.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
6

Harikumar, Anjali, Catherine Bougerol, Fabrice Donatini, et al. "Study of AlxGa1-xN/AlN (0 ≤ x ≤ 0.1) quantum dots for the fabrication of E-beam pumped UV emitters." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2576616.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
7

Sultana, Sadia, and Md Shah Alam. "Tunable bandgap and wavelength range of zinc blende indium gallium nitride quantum dots." In 2015 18th International Conference on Computer and Information Technology (ICCIT). IEEE, 2015. http://dx.doi.org/10.1109/iccitechn.2015.7488132.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
8

Sultana, Sadia, and Shah Alam. "Optimization of Indium Gallium Nitride quantum dots for absorbing light from solar spectra." In 2015 2nd International Conference on Electrical Information and Communication Technologies (EICT). IEEE, 2015. http://dx.doi.org/10.1109/eict.2015.7391983.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
9

Łepkowski, S. P., Marília Caldas, and Nelson Studart. "Influence of nonlinear elasticity on the stress field induced by nitride quantum dots in a subsurface layer." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295323.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
10

ElAfandy, Rami T., Tien Khee Ng, Yang Yang, et al. "Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots." In 2011 High Capacity Optical Networks and Enabling Technologies (HONET). IEEE, 2011. http://dx.doi.org/10.1109/honet.2011.6149817.

Der volle Inhalt der Quelle
APA, Harvard, Vancouver, ISO und andere Zitierweisen
Die Auswahlen zum Thema "Quantum dots. Semiconductors. Gallium nitride" für konkrete Quellenarten können Sie auch interessieren:
Zeitschriftenartikel Dissertationen
Wir bieten Rabatte auf alle Premium-Pläne für Autoren, deren Werke in thematische Literatursammlungen aufgenommen wurden. Kontaktieren Sie uns, um einen einzigartigen Promo-Code zu erhalten!

Zur Bibliographie