Thematische Bibliographien / Resistive memories (RRAMs) / Zeitschriftenartikel
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Zeitschriftenartikel zum Thema „Resistive memories (RRAMs)“

Autor: Grafiati
Veröffentlicht am 25. Mai 2024
Zuletzt aktualisiert am 31. Juli 2025

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1

Kim, Kyoungdu, Woongki Hong, Changmin Lee, et al. "Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory." Materials Research Express 8, no. 11 (2021): 116301. http://dx.doi.org/10.1088/2053-1591/ac3400.

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Abstract In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106
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Lin, Wu, and Chen. "Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories." Crystals 9, no. 6 (2019): 318. http://dx.doi.org/10.3390/cryst9060318.

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: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching fe
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Aguilera-Pedregosa, Cristina, David Maldonado, Mireia B. González, et al. "Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories." Micromachines 14, no. 3 (2023): 630. http://dx.doi.org/10.3390/mi14030630.

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A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These
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Jha, Rashmi, Vamshi Kiran Kiran Gogi, and Siddharth Barve. "(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices." ECS Meeting Abstracts MA2024-01, no. 57 (2024): 3011. http://dx.doi.org/10.1149/ma2024-01573011mtgabs.

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Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of no
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Arumí, Daniel, Salvador Manich, Álvaro Gómez-Pau, et al. "Impact of Laser Attacks on the Switching Behavior of RRAM Devices." Electronics 9, no. 1 (2020): 200. http://dx.doi.org/10.3390/electronics9010200.

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The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tes
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Ansh and Mayank Shrivastava. "Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process." Journal of Physics D: Applied Physics 55, no. 8 (2021): 085102. http://dx.doi.org/10.1088/1361-6463/ac3281.

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Abstract Resistance switching (RS) in 2D molybdenum disulfide (MoS2) was recently discovered. Since the discovery, many reports demonstrating MoS2 resistive random-access memory (RRAM) with synapse-like behavior have been published. These reports strongly justify applications of MoS2 RRAM in neuromorphic hardware as well as an alternative to conventional binary memories. In this work, we unveil the effect of RS, induced by current–voltage hysteresis cycles across CVD-grown monolayer MoS2-based gated RRAM, on its transistor’s electrical and reliability characteristics. A unique gate voltage dep
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Shu, Pan, Xiaofei Cao, Yongqiang Du, et al. "Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite." Journal of Materials Chemistry C 8, no. 37 (2020): 12865–75. http://dx.doi.org/10.1039/d0tc02579h.

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8

Alimkhanuly, Batyrbek, Sanghoek Kim, Lok-won Kim, and Seunghyun Lee. "Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode." Nanomaterials 10, no. 9 (2020): 1634. http://dx.doi.org/10.3390/nano10091634.

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Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is
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Vasileiadis, Nikolaos, Vasileios Ntinas, Georgios Ch Sirakoulis, and Panagiotis Dimitrakis. "In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor." Materials 14, no. 18 (2021): 5223. http://dx.doi.org/10.3390/ma14185223.

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State-of-the-art IoT technologies request novel design solutions in edge computing, resulting in even more portable and energy-efficient hardware for in-the-field processing tasks. Vision sensors, processors, and hardware accelerators are among the most demanding IoT applications. Resistance switching (RS) two-terminal devices are suitable for resistive RAMs (RRAM), a promising technology to realize storage class memories. Furthermore, due to their memristive nature, RRAMs are appropriate candidates for in-memory computing architectures. Recently, we demonstrated a CMOS compatible silicon nitr
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Poddar, Swapnadeep, Yuting Zhang, Zhesi Chen, Zichao Ma, and Zhiyong Fan. "(Digital Presentation) Resistive Switching and Brain-Inspired Computing in Perovskite Nanowires and Quantum Wires." ECS Meeting Abstracts MA2022-02, no. 36 (2022): 1336. http://dx.doi.org/10.1149/ma2022-02361336mtgabs.

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In the past decade, halide perovskites (HPs) have shot to fame in the genre of optoelectronics and photovoltaics owing to their large absorption co-effcient, high color purity, tunable bandgap and long charge diffusion lengths. Besides these traits, HPs also possess innumerable charge transport pathways, inherent hysteresis, high charge-carrier and ionic mobilities which render them as ideal candidates for resistive random access switching memories (RRAMs). However owing to material and electrical instability associated with HP thin-film devices, the figures-of-merits (FOMs) namely retention,
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Minguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, et al. "OxRAM + OTS optimization for binarized neural network hardware implementation." Semiconductor Science and Technology 37, no. 1 (2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.

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Abstract Low-power memristive devices embedded on graphics or central processing units logic core are a very promising non-von-Neumann approach to improve significantly the speed and power consumption of deep learning accelerators, enhancing their deployment on embedded systems. Among various non-ideal emerging neuromorphic memory devices, synaptic weight hardware implementation using resistive random-access memories (RRAMs) within 1T1R architectures promises high performance on low precision binarized neural networks (BNN). Taking advantage of the RRAM capabilities and allowing to substantial
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Ali, Sarfraz, Muhammad Abaid Ullah, Ali Raza, et al. "Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing." Nanomaterials 13, no. 17 (2023): 2443. http://dx.doi.org/10.3390/nano13172443.

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This review article attempts to provide a comprehensive review of the recent progress in cerium oxide (CeO2)-based resistive random-access memories (RRAMs). CeO2 is considered the most promising candidate because of its multiple oxidation states (Ce3+ and Ce4+), remarkable resistive-switching (RS) uniformity in DC mode, gradual resistance transition, cycling endurance, long data-retention period, and utilization of the RS mechanism as a dielectric layer, thereby exhibiting potential for neuromorphic computing. In this context, a detailed study of the filamentary mechanisms and their types is r
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Poddar, Swapnadeep, and Zhiyong Fan. "(Invited) Revolutionizing Data Storage and Brain-Inspired Computing with Perovskite Nanowires and Quantum Wires." ECS Meeting Abstracts MA2024-02, no. 20 (2024): 1803. https://doi.org/10.1149/ma2024-02201803mtgabs.

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Halide perovskites (HPs) have been ubiquitously utilized in optoelectronics and photovoltaics in the recent past owing to their tunable bandgap, long charge diffusion lengths and high color purity. However, their application in resistive random access switching memories (RRAMs) has been somewhat limited by material and electrical instability associated with HP thin-film devices, resulting in below-par figures-of-merits (FOMs) such as data retention time, electrical endurance and switching speed. To collectively address the shortcomings of HP thin-film based RRAMs, we developed a switching matr
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Arashloo, Banafsheh Alizadeh. "Cupper doping effect on the electrical characteristics of TiO2 based Memristor." Brilliant Engineering 2, no. 1 (2020): 19–24. http://dx.doi.org/10.36937/ben.2021.001.004.

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Nanostructures as a starting point to solve the scaling problems of the CMOS technologies, have been concerned the attention of numerous researchers. By strong demanding for nonvolatile memory technology, resistive memories based on metal oxide has been common due to several advantages, such as low-power consumption, good scalability and fast switching speed. Even though high-temperature fabrication process has a large area limitation by their material characteristics. Metal oxide thin films are respectable candidate to fabricate at nano scale solid state electronic device. Metal/Metal-Oxide/M
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WANG, SHENG-YU, and TSEUNG-YUEN TSENG. "INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES." Journal of Advanced Dielectrics 01, no. 02 (2011): 141–62. http://dx.doi.org/10.1142/s2010135x11000306.

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Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The RRAM devices primarily utilize different resistance values to store the digital data and can keep the resistance state without any power. Recent advances in the understanding of the resistive switching mechanism are described by a thermal or ele
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Vinuesa, Guillermo, Hector Garcia, Salvador Duenas, et al. "Effect of the Temperature on the Performance and Dynamic Behavior of HfO2-Based Rram Devices." ECS Meeting Abstracts MA2024-01, no. 21 (2024): 1297. http://dx.doi.org/10.1149/ma2024-01211297mtgabs.

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Over the past decades, the demand for semiconductor memory devices has been steadily increasing, and is currently experiencing an unprecedented boost due to the development and expansion of artificial intelligence. Among emerging high-density non-volatile memories, resistive random-access memory (RRAM) is one of the best recourses for all kind of applications, such as neuromorphic computing or hardware security [1]. Although many materials have been evaluated for RRAM development, some of them with excellent results, HfO2 is one of the established materials in CMOS domain due to its compatibil
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Qian, Kai, Viet Cuong Nguyen, Tupei Chen, and Pooi See Lee. "Novel concepts in functional resistive switching memories." Journal of Materials Chemistry C 4, no. 41 (2016): 9637–45. http://dx.doi.org/10.1039/c6tc03447k.

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18

Chen, Tong, Kangmin Leng, Zhongyuan Ma, et al. "Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current." Nanomaterials 13, no. 1 (2022): 85. http://dx.doi.org/10.3390/nano13010085.

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With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of biological synapses. However, an effective way to detect the components of conductive tunable nanopathways in a-SiNx:H RRAM has been a challenge with the thickness down-scaling to nanoscale during resistive switching. For the first time, we report the evolution of a Si dangling bond nanopathway in a-SiNx:H resistive switching memory can be traced
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Wan, Zhenni, Robert B. Darling, and M. P. Anantram. "Vanadium Oxide Based RRAM Device." MRS Advances 2, no. 52 (2017): 3019–24. http://dx.doi.org/10.1557/adv.2017.442.

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ABSTRACTForming-free bipolar resistive switching characteristics in a Vanadium oxide based sandwich structure is observed for the first time. The bottom conducting layer is the common ground electrode for all devices. The top conducting layer acts as an active element with an additional Cr/Al/Cr electrode patterned on its top for making contact. Different from the typical metal/transition metal oxide/metal sandwich structure based resistive memories, our device exhibits a low resistance state (LRS) in its virgin state, and can be switched to a high resistance state (HRS) when a positive bias o
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Dash, C. S., and S. R. S. Prabaharan. "Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)." Nanoscience & Nanotechnology-Asia 9, no. 4 (2019): 444–61. http://dx.doi.org/10.2174/2210681208666180621095241.

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Ion transport in the solid state has been regarded as imperative with regards to high energy density electrochemical storage devices (for instance, batteries) for efficient electric mobility. Of late, there is another niche application involving ion transport in solid state which manifested itself as nonvolatile memory namely memristor. Such memories are classified under the emerging category of novel solid state Resistive Random Access Memories (RRAM). In 2008, HP labs unveiled the first practical memristor device employing TiO2 and non-stoichiometric titania as bilayer stack structure and on
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Molas, Gabriel, Gilbert Sassine, Cecile Nail, et al. "(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions." ECS Transactions 86, no. 3 (2018): 35–47. http://dx.doi.org/10.1149/08603.0035ecst.

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Lee, Yunseok, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung, and Sungjun Kim. "Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices." Materials 15, no. 21 (2022): 7520. http://dx.doi.org/10.3390/ma15217520.

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Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteristics, and thus has been studied as a next-generation memory application and neuromorphic system area. In this paper, AlSiOx, which was used as an alloyed insulator, was used to secure stable switching. We demonstrate synaptic characteristics, as well as the basic resistive switching characteristics
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Koohzadi, Pooria, Mohammad Taghi Ahmadi, Javad Karamdel, and Truong Khang Nguyen. "Graphene band engineering for resistive random-access memory application." International Journal of Modern Physics B 34, no. 18 (2020): 2050171. http://dx.doi.org/10.1142/s0217979220501714.

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Emerging memory technologies promise new memories to store more data at less cost. On the other hand, the scaling of silicon-based chips approached its physical limits. Nonvolatile memory technologies, such as resistive random-access memory (RRAM), are trying to solve this problem. The fundamental study in RRAM devices still needs to be moved further. In this regard, conduction mechanism of RRAM is focused in this study. The RRAM conductance varies considerably depending on the material used in the dielectric layer and selection of electrodes. To formulate the conductance mechanism, new materi
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Pérez, Eduardo, Florian Teply, and Christian Wenger. "Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices." MRS Advances 2, no. 4 (2016): 223–28. http://dx.doi.org/10.1557/adv.2016.616.

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ABSTRACTIn this work the electrical performance of a radiation hard designed 1T-1R resistive random access memory (RRAM) device is investigated in DC (voltage sweep) and AC (pulsed voltage) modes. This new device is based on the combination of an Enclosed Layout Transistor (ELT) used as selector device and a TiN/ HfO2/ Ti/TiN RRAM stack used as resistive device. The high cell to cell variability in the DC mode makes it difficult to define an electrical gap between the High Resistive State (HRS) and the Low Resistive State (LRS). The strong reduction of the variability by the use of Incremental
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Wang, Li-Wen, Chih-Wei Huang, Ke-Jing Lee, Sheng-Yuan Chu, and Yeong-Her Wang. "Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing." Nanomaterials 13, no. 12 (2023): 1851. http://dx.doi.org/10.3390/nano13121851.

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Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the potential for multi-level cells, which would overcome demands related to mass storage. Among numerous semiconductor materials, gallium oxide (a fourth-generation semiconductor material) is applied
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Yalon, E., I. Karpov, V. Karpov, I. Riess, D. Kalaev, and D. Ritter. "Detection of the insulating gap and conductive filament growth direction in resistive memories." Nanoscale 7, no. 37 (2015): 15434–41. http://dx.doi.org/10.1039/c5nr03314d.

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Napolean, A., N. M. Sivamangai, S. Rajesh, et al. "Effects of Ambient and Annealing Temperature in HfO2 Based RRAM Device Modeling and Circuit-Level Implementation." ECS Journal of Solid State Science and Technology 11, no. 2 (2022): 023012. http://dx.doi.org/10.1149/2162-8777/ac557b.

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This article focuses on the relevance of the effect of ambient temperature and annealing in the context of compact modeling of metal oxide resistive random access memory (RRAM) devices. The ambient temperature affects the conduction characteristic of resistive switching memories, so it becomes an essential factor to include when adjusting the experimental data. Reported the fabricated results and memory switching parameters with the defined set (Vset) and reset (Vreset) transition voltages for the fabricated annealed HfO2-based RRAM. Additionally, to illustrate the importance of this character
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Zhang, Donglin, Bo Peng, Yulin Zhao, et al. "Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes." Micromachines 12, no. 8 (2021): 913. http://dx.doi.org/10.3390/mi12080913.

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Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance. Therefore, it is necessary to optimize the sensing schemes to improve the application range of RRAM. In this paper, the issues faced by RRAM in advanced technology nodes are summarized. Then, the advantages and weaknesses in the novel design and
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Yang, Seyeong, Jongmin Park, Youngboo Cho, Yunseok Lee, and Sungjun Kim. "Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process." International Journal of Molecular Sciences 23, no. 21 (2022): 13249. http://dx.doi.org/10.3390/ijms232113249.

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Nitride film played an essential role as an excellent diffusion barrier in the semiconductor field for several decades. In addition, interest in next-generation memories induced researchers’ attention to nitride film as a new storage medium. A Pt/AlN/TaN device was investigated for resistive random-access memory (RRAM) application in this work. Resistive switching properties were examined in the AlN thin film formed by atomic layer deposition (ALD). The unique switching feature conducted under the positive voltage was investigated, while the typical bipolar switching was conducted under the ap
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Ruiz-Castro, Juan E., Christian Acal, Ana M. Aguilera, and Juan B. Roldán. "A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories." Mathematics 9, no. 4 (2021): 390. http://dx.doi.org/10.3390/math9040390.

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A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time. The stationary distribution was calculated through matrix-algorithmic methods and multiple interesting measures were worked out. The number of visits distribution to a determine macro-state were analyzed from the respective differential equations and the Laplace transform. The mean number of visits to a macro-state between any two times was given. The results were implemented computationally and were successfully appli
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Lahbacha, Khitem, Fakhreddine Zayer, Hamdi Belgacem, Wael Dghais, and Antonio Maffucci. "Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures." IEEE Open Journal of Nanotechnology 2 (2021): 111–19. http://dx.doi.org/10.1109/ojnano.2021.3124846.

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La Torraca, Paolo, Francesco Maria Puglisi, Andrea Padovani, and Luca Larcher. "Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory." Materials 12, no. 21 (2019): 3461. http://dx.doi.org/10.3390/ma12213461.

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Memristor-based neuromorphic systems have been proposed as a promising alternative to von Neumann computing architectures, which are currently challenged by the ever-increasing computational power required by modern artificial intelligence (AI) algorithms. The design and optimization of memristive devices for specific AI applications is thus of paramount importance, but still extremely complex, as many different physical mechanisms and their interactions have to be accounted for, which are, in many cases, not fully understood. The high complexity of the physical mechanisms involved and their p
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Khan, Mohammad Nasim Imtiaz, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay, and Swaroop Ghosh. "Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories." Journal of Low Power Electronics and Applications 11, no. 4 (2021): 38. http://dx.doi.org/10.3390/jlpea11040038.

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Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to data security. In this paper, we investigate their vulnerability against Side Channel Attack (SCA). We assume that the adversary can monitor the supply current of the memory array consumed during read/write operations and recover the secret key of Advanced Encryption Standard (AES) execution. First,
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Huang, Yanzi, Lingyu Wan, Jiang Jiang, Liuyan Li, and Junyi Zhai. "Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator." Nanomaterials 12, no. 13 (2022): 2199. http://dx.doi.org/10.3390/nano12132199.

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As one of the promising non-volatile memories (NVMs), resistive random access memory (RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on external power to induce resistance-switching, which restricts its applications. In this work, we have developed a self-powered RRAM that consists of a Pr0.7Ca0.3MnO3 (PCMO) film and a triboelectric nanogenerator (TENG). With a traditional power supply, the resistance switch ratio achieves the highest switching ratio reported so far, 9 × 107. By converting the mechanical energy harvested by a TENG into electrical energy to power
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Otsus, Markus, Joonas Merisalu, Aivar Tarre, et al. "Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles." Electronics 11, no. 18 (2022): 2963. http://dx.doi.org/10.3390/electronics11182963.

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As research into additives and intentionally introduced impurities in dielectric thin film for enhancing the resistive switching based random access memories (RRAM) continues to gain momentum, the aim of the study was to evaluate the effects of chemically presynthesised Ni nanoparticles (NPs) embedded in a dielectric layer to the overall structure and resistive switching properties. HfO2-based thin films embedded with Ni NPs were produced by atomic layer deposition (ALD) from tetrakis(ethylmethylamino)hafnium (TEMAH) and the O2 plasma ALD process onto a TiN/Si substrate. The Ni NPs were separa
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Pérez, Eduardo, Óscar González Ossorio, Salvador Dueñas, Helena Castán, Héctor García, and Christian Wenger. "Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays." Electronics 9, no. 5 (2020): 864. http://dx.doi.org/10.3390/electronics9050864.

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A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programmi
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Cario, Laurent, Cristian Vaju, Benoit Corraze, Vincent Guiot, and Etienne Janod. "Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories." Advanced Materials 22, no. 45 (2010): 5193–97. http://dx.doi.org/10.1002/adma.201002521.

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38

Khan, Mohammad Nasim Imtiaz, and Swaroop Ghosh. "Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories." Journal of Low Power Electronics and Applications 11, no. 4 (2021): 36. http://dx.doi.org/10.3390/jlpea11040036.

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Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a tolerable limit. These new technologies offer high density and consume zero leakage power and can bridge the gap between processor and memory. The desirable properties of emerging NVMs make them suitable candidates for several applications including replacement of conventional memories. However, their unique characteristics introduce new data privac
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Rodrigues, Julia, Michael Liang, Pranav Choori, and Ethan Ahn. "Re-Looking at Silicon Oxide for Neuromorphic Computing." ECS Meeting Abstracts MA2025-01, no. 63 (2025): 3079. https://doi.org/10.1149/ma2025-01633079mtgabs.

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Backgrounds/Introduction: The convergence of neuromorphic computing with IoT will drive intelligence at the edge, bringing a completely new landscape for emerging materials technologies. The memory devices in the IoT network need to be designed and manufactured in a sustainable way while fulfilling the specific performance requirements such as low power and immunity to read disturbance. In this work, sputter-deposited silicon oxide (SiOx) was investigated as a promising material platform for conductive-bridge RAM (CBRAM) and resistive RAM (RRAM). In the field, metal oxides have been the most w
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Quiroz, Heiddy P., Jorge A. Calderón, and A. Dussan. "Magnetic switching control in Co/TiO2 bilayer and TiO2:Co thin films for Magnetic-Resistive Random Access Memories (M-RRAM)." Journal of Alloys and Compounds 840 (November 2020): 155674. http://dx.doi.org/10.1016/j.jallcom.2020.155674.

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41

Mounica, J., and G. V. Ganesh. "Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 3 (2016): 1183. http://dx.doi.org/10.11591/ijece.v6i3.9448.

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Now-a-days, Energy consumption is the major key factor in Memories. By switching the circuit in off mode and with an lower voltages, leads to decrease in an power dissipation of the circuit. Compared to DRAM SRAM’S are mostly used because of their data retaining capability. The major advantage of using SRAM’s rather than DRAM’S is that, they are providing fast power-on/off speeds. Hence SRAM’s are more preferred over DRAM’s for better instant-on operation. Generally SRAM’s are classified in to two types namely volatile and non-volatile SRAM’s. A non-volatile SRAM enables chip to achieve perfor
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42

Mounica, J., and G. V. Ganesh. "Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 3 (2016): 1183. http://dx.doi.org/10.11591/ijece.v6i3.pp1183-1189.

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Now-a-days, Energy consumption is the major key factor in Memories. By switching the circuit in off mode and with an lower voltages, leads to decrease in an power dissipation of the circuit. Compared to DRAM SRAM’S are mostly used because of their data retaining capability. The major advantage of using SRAM’s rather than DRAM’S is that, they are providing fast power-on/off speeds. Hence SRAM’s are more preferred over DRAM’s for better instant-on operation. Generally SRAM’s are classified in to two types namely volatile and non-volatile SRAM’s. A non-volatile SRAM enables chip to achieve perfor
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43

Zeinati, Aseel, Durgamadhab Misra, Bhavana Padala, et al. "A Comparative Study of H-Plasma Treated ZrO2 and HfO2 RRAM Devices for Low Power in-Memory Computing." ECS Meeting Abstracts MA2025-01, no. 63 (2025): 3073. https://doi.org/10.1149/ma2025-01633073mtgabs.

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The floating gate flash memories are facing their physical and scaling limitation, highlighting the need of the resistive random-access memory (RRAM) as a promising solution for in-memory computing1. Transition metal oxide (TMOs) are utilized as switching layer for RRAM devices due to their low power consumption, high density integration capability, high switching speed (<10ns), good stability, endurance, retention and their compatibility with the existing CMOS technology2-6. ZrO2 and HfO2 are two of the mature TMOs to be used as switching layer due to their high specific heat and thermal c
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Vinuesa, Guillermo, Hector Garcia, Salvador Duenas, and Helena Castan. "(Invited) Thermoelectric Analysis of Dielectric Materials Properties for Neuromorphic Technologies." ECS Meeting Abstracts MA2024-01, no. 21 (2024): 1294. http://dx.doi.org/10.1149/ma2024-01211294mtgabs.

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The effort made in recent years in the development of new memories has led to a significant advance in emerging technologies, which have proven their usefulness not only in the field of memories, but also to obtain devices that perform an artificial synapse and thus emulate biological neurons. Among the novel concepts, resistive-switching random access memory (RRAM), or memristive device, has attracted a great deal of interest for its ability to store multiple states. In fact, its operation is based on the so-called resistive switching, which consists of the formation of conductive filaments t
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Li, Rongbin, Yan Sun, Qianyu Zhao, et al. "NIR-Triggered Logic Gate in MXene-Modified Perovskite Resistive Random Access Memory." Journal of Materials Chemistry C, 2024. http://dx.doi.org/10.1039/d3tc03847e.

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The resistive-switching-based logic gates are the promising electronic components for future digital logic operation in the integrated circuit based on resistive random access memories (RRAMs). Especially, the logic gates being...
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Ielmini, Daniele, Federico Nardi, Carlo Cagli, and Andrea L. Lacaita. "Size-dependent Temperature Instability in NiO–based Resistive Switching Memory." MRS Proceedings 1250 (2010). http://dx.doi.org/10.1557/proc-1250-g05-03.

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AbstractResistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for program operations and data retention stability. These two problems are here investigated from experimental and theoretical points of view to clarify the possibilities of NiO RRAMs to become a real competitive alternative to mainstream Flash technology.
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Pan, Wen, Lai Wang, Jianshi Tang, et al. "Optoelectronic array of photodiodes integrated with RRAMs for energy-efficient in-sensor computing." Light: Science & Applications 14, no. 1 (2025). https://doi.org/10.1038/s41377-025-01743-y.

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Abstract The rapid development of internet of things (IoT) urgently needs edge miniaturized computing devices with high efficiency and low-power consumption. In-sensor computing has emerged as a promising technology to enable in-situ data processing within the sensor array. Here, we report an optoelectronic array for in-sensor computing by integrating photodiodes (PDs) with resistive random-access memories (RRAMs). The PD-RRAM unit cell exhibits reconfigurable optoelectronic output and photo-responsivity by programming RRAMs into different resistance states. Furthermore, a 3 × 3 PD-RRAM array
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48

"Comprehensive Examination on Resistive Random Access Memory." International Journal of Recent Technology and Engineering 8, no. 4 (2019): 4663–67. http://dx.doi.org/10.35940/ijrte.d8398.118419.

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With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level storage. Numerous resistive mechanisms, such as conductive filaments, space charge limited conduction, trap charging and discharging, Schottky emission, and pool-Frenkel emission, have been proposed to explain the resistance switches of RRAM dev
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Li, Yang, Shahar Kvatinsky, and Lior Kornblum. "Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories." Frontiers in Physics 9 (October 27, 2021). http://dx.doi.org/10.3389/fphy.2021.772238.

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Two-dimensional electron gases (2DEGs) can be formed at some oxide interfaces, providing a fertile ground for creating extraordinary physical properties. These properties can be exploited in various novel electronic devices such as transistors, gas sensors, and spintronic devices. Recently several works have demonstrated the application of 2DEGs for resistive random-access memories (RRAMs). We briefly review the basics of oxide 2DEGs, emphasizing scalability and maturity and describing a recent trend of progression from epitaxial oxide interfaces (such as LaAlO3/SrTiO3) to simple and highly sc
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Bouzouita, Manel, Shashikant Pathak, Fakhreddine Zayer, Hamdi Belgacem, and Ioulia Tzouvadaki. "Advanced memristive architectures based on nanomaterials for biomedical applications: a mini review." Frontiers in Nanotechnology 7 (April 23, 2025). https://doi.org/10.3389/fnano.2025.1558743.

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In recent years, the interest of science in big data sensing, storage and processing has been growing fast. Nano-materials have been widely used in resistive switching devices thanks to their distinguished properties. Furthermore, they provide nano-scale dimensions and compatibility with fabrication procedures and complementary metal oxide semiconductor (CMOS) technology. Nano-materials can also enhance the performance of memristive structures. The operation of a memristor, which enables efficient resistive switching characterized by fast response, increased storage density, and low power requ
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