Zeitschriftenartikel zum Thema „Scandium aluminum nitride (ScAlN)“
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N. I .M. Nor, N. Khalid, H. Aris, M. S. Mispan und N. Aiman Syahmi. „Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator“. International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (26.12.2023): 121–30. http://dx.doi.org/10.58915/ijneam.v16idecember.398.
Hähnlein, Bernd, Tim Hofmann, Katja Tonisch, Jörg Pezoldt, Jaroslav Kovac und Stefan Krischok. „Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications“. Key Engineering Materials 865 (September 2020): 13–18. http://dx.doi.org/10.4028/www.scientific.net/kem.865.13.
Zhang, Qiaozhen, Mingzhu Chen, Huiling Liu, Xiangyong Zhao, Xiaomei Qin, Feifei Wang, Yanxue Tang, Keat Hoe Yeoh, Khian-Hooi Chew und Xiaojuan Sun. „Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices“. Materials 14, Nr. 21 (27.10.2021): 6437. http://dx.doi.org/10.3390/ma14216437.
Wei, Min, Yan Liu, Yuanhang Qu, Xiyu Gu, Yilin Wang, Wenjuan Liu, Yao Cai, Shishang Guo und Chengliang Sun. „Development of Temperature Sensor Based on AlN/ScAlN SAW Resonators“. Electronics 12, Nr. 18 (12.09.2023): 3863. http://dx.doi.org/10.3390/electronics12183863.
Li, Minghua, Huamao Lin, Kan Hu und Yao Zhu. „Oxide overlayer formation on sputtered ScAlN film exposed to air“. Applied Physics Letters 121, Nr. 11 (12.09.2022): 111602. http://dx.doi.org/10.1063/5.0106717.
Zhang, Yuchao, Bin Miao, Guanghua Wang, Hongyu Zhou, Shiqin Zhang, Yimin Hu, Junfeng Wu, Xuechao Yu und Jiadong Li. „ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing“. Micromachines 14, Nr. 3 (23.02.2023): 516. http://dx.doi.org/10.3390/mi14030516.
Tominaga, Takumi, Shinji Takayanagi und Takahiko Yanagitani. „Negative-ion bombardment increases during low-pressure sputtering deposition and their effects on the crystallinities and piezoelectric properties of scandium aluminum nitride films“. Journal of Physics D: Applied Physics 55, Nr. 10 (09.12.2021): 105306. http://dx.doi.org/10.1088/1361-6463/ac3d5c.
Liu, Xiaonan, Qiaozhen Zhang, Mingzhu Chen, Yaqi Liu, Jianqiu Zhu, Jiye Yang, Feifei Wang, Yanxue Tang und Xiangyong Zhao. „Multiphysics Modeling and Analysis of Sc-Doped AlN Thin Film Based Piezoelectric Micromachined Ultrasonic Transducer by Finite Element Method“. Micromachines 14, Nr. 10 (18.10.2023): 1942. http://dx.doi.org/10.3390/mi14101942.
Ji, Meilin, Haolin Yang, Yongxin Zhou, Xueying Xiu, Haochen Lv und Songsong Zhang. „Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections“. Micromachines 13, Nr. 12 (19.12.2022): 2260. http://dx.doi.org/10.3390/mi13122260.
Stoeckel, Chris, Katja Meinel, Marcel Melzer, Agnė Žukauskaitė, Sven Zimmermann, Roman Forke, Karla Hiller und Harald Kuhn. „Static High Voltage Actuation of Piezoelectric AlN and AlScN Based Scanning Micromirrors“. Micromachines 13, Nr. 4 (15.04.2022): 625. http://dx.doi.org/10.3390/mi13040625.
Krey, Maximilian, Bernd Hähnlein, Katja Tonisch, Stefan Krischok und Hannes Töpfer. „Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory“. Sensors 20, Nr. 4 (13.02.2020): 1001. http://dx.doi.org/10.3390/s20041001.
Zhang, Zhenghu, Linwei Zhang, Zhipeng Wu, Yunfei Gao und Liang Lou. „A High-Sensitivity MEMS Accelerometer Using a Sc0.8Al0.2N-Based Four Beam Structure“. Micromachines 14, Nr. 5 (18.05.2023): 1069. http://dx.doi.org/10.3390/mi14051069.
Jang, Youna, und Dal Ahn. „Analyzing Three Types of Design Methods for 5G N41 Band Acoustic Wave Filters“. International Journal of RF and Microwave Computer-Aided Engineering 2024 (13.01.2024): 1–12. http://dx.doi.org/10.1155/2024/4638443.
Shao, Shuai, Zhifang Luo, Kangfu Liu und Tao Wu. „Lorentz-force gyrator based on AlScN piezoelectric thin film“. Applied Physics Letters 121, Nr. 21 (21.11.2022): 213505. http://dx.doi.org/10.1063/5.0122325.
Zhou, Yongxin, Yuandong Gu und Songsong Zhang. „Nondestructive Wafer Level MEMS Piezoelectric Device Thickness Detection“. Micromachines 13, Nr. 11 (05.11.2022): 1916. http://dx.doi.org/10.3390/mi13111916.
Mi, Zetian. „(Invited) Ferroelectric Nitride Semiconductors: Epitaxy, Properties, and Emerging Device Applications“. ECS Meeting Abstracts MA2023-02, Nr. 32 (22.12.2023): 1579. http://dx.doi.org/10.1149/ma2023-02321579mtgabs.
Nian, Laixia, Yuanhang Qu, Xiyu Gu, Tiancheng Luo, Ying Xie, Min Wei, Yao Cai, Yan Liu und Chengliang Sun. „Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films“. Micromachines 14, Nr. 3 (27.02.2023): 557. http://dx.doi.org/10.3390/mi14030557.
Zhukov, Vladlen V., Denis A. Shcherbakov, Pavel B. Sorokin und Boris P. Sorokin. „DEPENDENCE OF PHYSICAL PROPERTIES OF PIEZOELECTRIC ALUMINUM-SCANDIUM NITRIDE ON SCANDIUM CONCENTRATION“. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA 64, Nr. 6 (16.05.2021): 95–103. http://dx.doi.org/10.6060/ivkkt.20216406.6384.
Park, Mingyo, Zhijian Hao, Rytis Dargis, Andrew Clark und Azadeh Ansari. „Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators“. Journal of Microelectromechanical Systems 29, Nr. 4 (August 2020): 490–98. http://dx.doi.org/10.1109/jmems.2020.3001233.
Leone, Stefano, Jana Ligl, Christian Manz, Lutz Kirste, Theodor Fuchs, Hanspeter Menner, Mario Prescher et al. „Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride“. physica status solidi (RRL) – Rapid Research Letters 14, Nr. 1 (07.11.2019): 1900535. http://dx.doi.org/10.1002/pssr.201900535.
Žukauskaitė, Agnė. „Editorial for Special Issue “Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices”“. Micromachines 14, Nr. 5 (18.05.2023): 1067. http://dx.doi.org/10.3390/mi14051067.
Kozlov, A. G., und T. N. Torgash. „Influence of scandium concentration on parameters of piezoelectric transducer based on aluminum scandium nitride“. Journal of Physics: Conference Series 1546 (Mai 2020): 012118. http://dx.doi.org/10.1088/1742-6596/1546/1/012118.
AKIYAMA, Morito, Tatsuo TABARU, Keiko NISHIKUBO, Akihiko TESHIGAHARA und Kazuhiko KANO. „Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments“. Journal of the Ceramic Society of Japan 118, Nr. 1384 (2010): 1166–69. http://dx.doi.org/10.2109/jcersj2.118.1166.
Kim, Young-Wook, Sung-Hee Lee, Toshiyuki Nishimura und Mamoru Mitomo. „Heat-resistant silicon carbide with aluminum nitride and scandium oxide“. Acta Materialia 53, Nr. 17 (Oktober 2005): 4701–8. http://dx.doi.org/10.1016/j.actamat.2005.07.002.
Rassay, Sushant, Dicheng Mo und Roozbeh Tabrizian. „Dual-Mode Scandium-Aluminum Nitride Lamb-Wave Resonators Using Reconfigurable Periodic Poling“. Micromachines 13, Nr. 7 (26.06.2022): 1003. http://dx.doi.org/10.3390/mi13071003.
Shifat, A. S. M. Zadid, Isaac Stricklin, Ravi Kiran Chityala, Arjun Aryal, Giovanni Esteves, Aleem Siddiqui und Tito Busani. „Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution“. Nanomaterials 13, Nr. 2 (09.01.2023): 274. http://dx.doi.org/10.3390/nano13020274.
Wang, Dixiong, Jeffrey Zheng, Pariasadat Musavigharavi, Wanlin Zhu, Alexandre C. Foucher, Susan E. Trolier-McKinstry, Eric A. Stach und Roy H. Olsson. „Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films“. IEEE Electron Device Letters 41, Nr. 12 (Dezember 2020): 1774–77. http://dx.doi.org/10.1109/led.2020.3034576.
Akiyama, Morito, Keiichi Umeda, Atsushi Honda und Toshimi Nagase. „Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films“. Applied Physics Letters 102, Nr. 2 (14.01.2013): 021915. http://dx.doi.org/10.1063/1.4788728.
Akiyama, Morito, Kazuhiko Kano und Akihiko Teshigahara. „Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films“. Applied Physics Letters 95, Nr. 16 (19.10.2009): 162107. http://dx.doi.org/10.1063/1.3251072.
Song, Yiwen, Carlos Perez, Giovanni Esteves, James Spencer Lundh, Christopher B. Saltonstall, Thomas E. Beechem, Jung In Yang et al. „Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond“. ACS Applied Materials & Interfaces 13, Nr. 16 (14.04.2021): 19031–41. http://dx.doi.org/10.1021/acsami.1c02912.
Musavigharavi, Pariasadat, Andrew C. Meng, Dixiong Wang, Jeffery Zheng, Alexandre C. Foucher, Roy H. Olsson und Eric A. Stach. „Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films“. Journal of Physical Chemistry C 125, Nr. 26 (24.06.2021): 14394–400. http://dx.doi.org/10.1021/acs.jpcc.1c01523.
Moreira, Milena, Johan Bjurström, Ilia Katardjev und Ventsislav Yantchev. „Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications“. Vacuum 86, Nr. 1 (Juli 2011): 23–26. http://dx.doi.org/10.1016/j.vacuum.2011.03.026.
Wang, Jialin, Mingyo Park, Stefan Mertin, Tuomas Pensala, Farrokh Ayazi und Azadeh Ansari. „A Film Bulk Acoustic Resonator Based on Ferroelectric Aluminum Scandium Nitride Films“. Journal of Microelectromechanical Systems 29, Nr. 5 (Oktober 2020): 741–47. http://dx.doi.org/10.1109/jmems.2020.3014584.
Alvarez, Gustavo A., Joseph Casamento, Len van Deurzen, Md Irfan Khan, Kamruzzaman Khan, Eugene Jeong, Elaheh Ahmadi, Huili Grace Xing, Debdeep Jena und Zhiting Tian. „Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy“. Materials Research Letters 11, Nr. 12 (14.11.2023): 1048–54. http://dx.doi.org/10.1080/21663831.2023.2279667.
Liu, Xiwen, Dixiong Wang, Kwan-Ho Kim, Keshava Katti, Jeffrey Zheng, Pariasadat Musavigharavi, Jinshui Miao, Eric A. Stach, Roy H. Olsson und Deep Jariwala. „Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory“. Nano Letters 21, Nr. 9 (21.04.2021): 3753–61. http://dx.doi.org/10.1021/acs.nanolett.0c05051.
Huang, Chukun, Haotian Shi, Linfeng Yu, Kang Wang, Ming Cheng, Qiang Huang, Wenting Jiao und Junqiang Sun. „Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film“. Advanced Optical Materials 10, Nr. 6 (21.01.2022): 2102334. http://dx.doi.org/10.1002/adom.202102334.
Ng, D. K. T., T. Zhang, L. Y. Siow, L. Xu, C. P. Ho, H. Cai, L. Y. T. Lee, Q. Zhang und N. Singh. „A functional CMOS compatible MEMS pyroelectric detector using 12%-doped scandium aluminum nitride“. Applied Physics Letters 117, Nr. 18 (02.11.2020): 183506. http://dx.doi.org/10.1063/5.0024192.
Wang, Qi, Yipeng Lu, Sergey Mishin, Yury Oshmyansky und David A. Horsley. „Design, Fabrication, and Characterization of Scandium Aluminum Nitride-Based Piezoelectric Micromachined Ultrasonic Transducers“. Journal of Microelectromechanical Systems 26, Nr. 5 (Oktober 2017): 1132–39. http://dx.doi.org/10.1109/jmems.2017.2712101.
Wang, Jialin, Yue Zheng und Azadeh Ansari. „Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States“. physica status solidi (RRL) – Rapid Research Letters 15, Nr. 5 (23.04.2021): 2100034. http://dx.doi.org/10.1002/pssr.202100034.
Jia, Licheng, Lei Shi, Zhaoyang Lu, Chengliang Sun und Guoqiang Wu. „A High-Performance 9.5% Scandium-Doped Aluminum Nitride Piezoelectric MEMS Hydrophone With Honeycomb Structure“. IEEE Electron Device Letters 42, Nr. 12 (Dezember 2021): 1845–48. http://dx.doi.org/10.1109/led.2021.3120806.
Dou, Wentong, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu und Wenjie Yu. „Super-High-Frequency Bulk Acoustic Resonators Based on Aluminum Scandium Nitride for Wideband Applications“. Nanomaterials 13, Nr. 20 (10.10.2023): 2737. http://dx.doi.org/10.3390/nano13202737.
Liu, Xiwen, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson und Deep Jariwala. „Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios“. Applied Physics Letters 118, Nr. 20 (17.05.2021): 202901. http://dx.doi.org/10.1063/5.0051940.
Zheng, Jeffrey X., Dixiong Wang, Pariasadat Musavigharavi, Merrilyn Mercy Adzo Fiagbenu, Deep Jariwala, Eric A. Stach und Roy H. Olsson. „Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure“. Journal of Applied Physics 130, Nr. 14 (14.10.2021): 144101. http://dx.doi.org/10.1063/5.0064041.
Tang, Zichen, Giovanni Esteves, Jeffrey Zheng und Roy H. Olsson. „Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1−xScxN in Aqueous KOH Solutions“. Micromachines 13, Nr. 7 (02.07.2022): 1066. http://dx.doi.org/10.3390/mi13071066.
Ko, Shin-Il, Sang-Jin Lee, Myong-Hoon Roh, Wonjoong Kim und Young-Wook Kim. „Effect of annealing on mechanical properties of silicon carbide sintered with aluminum nitride and scandium oxide“. Metals and Materials International 15, Nr. 1 (Februar 2009): 149–53. http://dx.doi.org/10.1007/s12540-009-0149-x.
Akiyama, Morito, Toshihiro Kamohara, Kazuhiko Kano, Akihiko Teshigahara, Yukihiro Takeuchi und Nobuaki Kawahara. „Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering“. Advanced Materials 21, Nr. 5 (02.12.2008): 593–96. http://dx.doi.org/10.1002/adma.200802611.
Bohnen, Tim, Gerbe W. G. van Dreumel, Paul R. Hageman, Rienk E. Algra, Willem J. P. van Enckevort, Elias Vlieg, Marcel A. Verheijen und James H. Edgar. „Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE“. physica status solidi (a) 206, Nr. 12 (14.08.2009): 2809–15. http://dx.doi.org/10.1002/pssa.200925060.
Wang, Yaxin, Yang Zou, Chao Gao, Xiyu Gu, Ye Ma, Yan Liu, Wenjuan Liu, Jeffrey Bo Woon Soon, Yao Cai und Chengliang Sun. „Effects of Electric Bias on Different Sc-Doped AlN-Based Film Bulk Acoustic Resonators“. Electronics 11, Nr. 14 (11.07.2022): 2167. http://dx.doi.org/10.3390/electronics11142167.
Gillinger, Manuel, Theresia Knobloch, Michael Schneider und Ulrich Schmid. „Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire“. Proceedings 1, Nr. 4 (17.08.2017): 341. http://dx.doi.org/10.3390/proceedings1040341.
Bartoli, Florian, Jérémy Streque, Jaafar Ghanbaja, Philippe Pigeat, Pascal Boulet, Sami Hage-Ali, Natalya Naumenko, A. Redjaïmia, Thierry Aubert und Omar Elmazria. „Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications“. Sensors 20, Nr. 16 (17.08.2020): 4630. http://dx.doi.org/10.3390/s20164630.