Thematische Bibliographien / Semiconductor light sources

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Auswahl der wissenschaftlichen Literatur zum Thema „Semiconductor light sources“

Autor: Grafiati

Veröffentlicht am 22. September 2023

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Zeitschriftenartikel zum Thema "Semiconductor light sources"

Shields, Andrew J. „Semiconductor quantum light sources“. Nature Photonics 1, Nr. 4 (April 2007): 215–23. http://dx.doi.org/10.1038/nphoton.2007.46.

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Chen, Disheng, und Weibo Gao. „Quantum light sources from semiconductor“. Journal of Semiconductors 40, Nr. 7 (Juli 2019): 070301. http://dx.doi.org/10.1088/1674-4926/40/7/070301.

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Sokolovskii, G. S., V. V. Dudelev, S. N. Losev, K. K. Soboleva, A. G. Deryagin, K. A. Fedorova, V. I. Kuchinskii, W. Sibbett und E. U. Rafailov. „Bessel beams from semiconductor light sources“. Progress in Quantum Electronics 38, Nr. 4 (Juli 2014): 157–88. http://dx.doi.org/10.1016/j.pquantelec.2014.07.001.

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Nagai, Haruo. „Semiconductor light sources for photonic sensing“. Optics & Laser Technology 29, Nr. 2 (März 1997): xv. http://dx.doi.org/10.1016/s0030-3992(97)88450-2.

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Khramtsov, Igor A., und Dmitry Yu Fedyanin. „Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors“. Materials 12, Nr. 12 (19.06.2019): 1972. http://dx.doi.org/10.3390/ma12121972.

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Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.

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Gaisler, V. A., I. A. Derebezov, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. M. Kachanova, Yu A. Zhivodkov, A. S. Kozhuhov, D. V. Scheglov und A. V. Latyshev. „Subminiature Light Sources Based on Semiconductor Nanostructures“. Optoelectronics, Instrumentation and Data Processing 56, Nr. 5 (September 2020): 518–26. http://dx.doi.org/10.3103/s8756699020050052.

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JIANG, Zi-qi, Xiao-mei LIU, Hua LIU und Peng PENG. „Design of semiconductor laser white light sources“. Chinese Journal of Liquid Crystal and Displays 36, Nr. 3 (2021): 371–78. http://dx.doi.org/10.37188/cjlcd.2020-0225.

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Ryzhikov, I. V., N. N. Rudenko und T. T. Silakova. „Semiconductor light sources—the revolution in optoelectronics“. Radioelectronics and Communications Systems 51, Nr. 4 (April 2008): 224–31. http://dx.doi.org/10.3103/s0735272708040079.

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Chou, H., und S. Ezekiel. „Wavelength stabilization of broadband semiconductor light sources“. Optics Letters 10, Nr. 12 (01.12.1985): 612. http://dx.doi.org/10.1364/ol.10.000612.

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Sokolovskii, G. S., V. V. Dudelev, S. N. Losev, S. A. Zolotovskaya, A. G. Deryagin, V. I. Kuchinskii, E. U. Rafailov und W. Sibbett. „Generation of propagation-invariant light beams from semiconductor light sources“. Technical Physics Letters 34, Nr. 12 (Dezember 2008): 1075–78. http://dx.doi.org/10.1134/s1063785008120262.

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Dissertationen zum Thema "Semiconductor light sources"

McRobbie, Andrew Douglas. „Novel semiconductor based light sources“. Thesis, University of St Andrews, 2009. http://hdl.handle.net/10023/565.

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The research described in this thesis relates to the design, fabrication and testing of novel semiconductor-based light sources that have been designed for the generation of infra-red light. The thesis is formatted to account for two distinct components of my work, where the first part concerns sources producing coherent light by direct laser emission, notably, ultrashort-pulse quantum-dot lasers. These types of lasers continue to show considerable promise as efficient, compact sources of ultrashort pulses with durations of hundreds of femtoseconds, while giving rise to unique and interesting electronic properties such as low lasing thresholds through the quantum nature of their density of states. At the outset a study of the most relevant aspects of the lasing dynamics of an optically pumped quantum-dot laser is outlined. Pumping of the device with intense discrete optical pulses leads to output from multiple electronic states, each having a characteristic wavelength and temporal properties. I show that pulses produced by excited-state emission have shorter durations (24 ps) and arrive earlier in time than those due to transitions from the ground state, which themselves have durations of around 180 ps. Investigations are then made on two different mode-locked quantum-dot laser systems. One is an all-quantum-dot external-cavity laser that is mode locked using a quantum-dot SESAM device at a repetition frequency of 860 MHz with output power approaching 20 mW. This is followed by a study of a monolithic two-section quantum-dot laser that is mode locked stably in a wide temperature range of 20°C to 70°C. The excellent performance characteristics presented serve to demonstrate both the versatility of quantum-dot material as components in mode-locked laser systems and the temperature stability of such laser devices. The second part of the thesis relates to structures that are designed to take advantage of nonlinear frequency conversion in GaAs-based semiconductors. This material system possesses a nonlinear coefficient of ~170 pm/V and is transparent from around 0.9 μm through to 17 μm, making it attractive for the realisation of a new class of efficient, integrable, quasi-phase-matched, optical parametric oscillator devices. Initially, ion implantation is utilised as a vector to create a periodically-switched nonlinear ridge waveguided device. The observation is made that in the course of implantation the transmissive properties of the device are severely degraded. Unfortunately, the high losses incurred, which reached 250 dB/cm, could not be removed without also destroying the modulation in nonlinearity. During the course of this investigation, significant technological advances were made in the production of orientation-patterned GaAs structures. By recognising the elegance and potential of this new orientation-patterned (OP) methodology, a study of its implications and applicability in the context of my project is initiated.

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McRobbie, Andrew Douglas. „Novel semiconductor based light sources /“. St Andrews, 2008. http://hdl.handle.net/10023/565.

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Nutz, Thomas. „Semiconductor quantum light sources for quantum computing“. Thesis, Imperial College London, 2018. http://hdl.handle.net/10044/1/63931.

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Semiconductor quantum dots can be used as sources of entangled single photons, which constitute a crucial resource for optical quantum computing. We present theoretical research on entanglement verification and nuclear spin physics, leading to results that are relevant to both experimental work and the theory of quantum optics and mesoscopic quantum systems. Optical quantum computing requires large entangled photonic states, yet characterizing even few-photon states is a challenge in current experiments due to low photon detection efficiencies. We present a lower bound on a measure of computational usefulness of a potentially large quantum state that requires only measured values of three-photon correlations. Hence this bound provides a simple and applicable benchmarking method for quantum dot experiments. We then turn to the critical issue of the interaction between electron and nuclear spins in quantum dots. This interaction gives rise to decoherence that stands in the way of generating entangled photons as well as nuclear phenomena that might help to overcome this challenge. We formulate a quantum mechanical model of the nuclear spin system in a quantum dot driven by continuous-wave laser light. Based on the analytical steady state solution of this model we predict a novel nuclear spin effect, giving rise to nuclear spin polarization that counteracts the effect of an external magnetic field. Beyond the decoherence problem nuclear spins give rise to randomly time-varying transition energies. A quantum mechanical model of this noise as well as the effect of photon scattering is developed, leading to the insight that optical driving can continuously probe the electron transition energy and thereby prevent it from changing.

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Cao, Yameng. „Semiconductor light sources for photonic quantum computing“. Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/56619.

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The isolation of qubits from decoherence is crucial to the prospect of building revolutionary quantum devices. This work is devoted to an optical study of the decoherence on spin qubits in self-assembled quantum dots. This thesis contributes towards a complete understanding of quantum decoherence, of which highlighted discoveries include bypassing the spectral diffusion in neutral quantum dot emission lines; observing for the first time the self-polarization phenomenon of nuclear spins, via the resonance-locking effect on a negatively charged quantum dot; and revealing the limiting factors on hole spin dephasing, by measuring polarization correlations on a positively charged quantum dot. Three studies were conducted using two different spectroscopy techniques. For the first study, the spectral diffusion of emission line due to random electrostatic fluctuations was revealed, by scanning a neutral quantum dot transition across the laser resonance. Exciting the quantum dot resonantly bypassed this problem, paving the way for an on-demand antibunched source that generates narrow-band photons. For the second study, evidences supporting the spontaneous self-polarization of nuclear spins were observed for the first time, since it was predicted nearly four decades ago by M. Dyankonov and V.I. Perel. The self-polarization phenomenon is a remarkable demonstration of dynamic nuclear spin polarization since it manifests without the ground state electron being spin-polarized. In the last study, factors limiting the hole spin lifetime was inferred from measuring polarization correlation of successively emitted photons from a positively charged quantum dot. Evidences support a strong dependence on the carrier repopulation rate and the single electron spin dephasing in the upper state, due to the Overhauser field. In combination with the observation of spontaneous nuclear polarization, this opens the possibility of an electron spin sensor, which can indirectly probe the nuclear field.

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Fedorova, Ksenia Alexandrovna. „Novel semiconductor based broadly tunable light sources“. Thesis, University of Dundee, 2011. https://discovery.dundee.ac.uk/en/studentTheses/ce12469e-3473-4a97-9f4d-45ade4c0acfb.

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The development of compact and low-cost coherent sources in visible and infrared wavelength range can provide indispensible tools for a variety of scientific, technological and industrial applications. Great progress over the last years in material science, crystal growth and semiconductor material processing in combination with recent advances in some of the more traditional technologies, in particular nonlinear frequency conversion and parametric sources, have led to the realisation of a new generation of laser sources. Furthermore, the advent of a new generation of quasi-phase-matched, waveguided and semiconductor nonlinear materials together with novel semiconductor lasers have led to the development of new frequency conversion and parametric sources with previously unattainable performance capabilities. The research described in this thesis relates to the development and characterisation of novel semiconductor based laser sources tunable in the broad spectral ranges which are unattainable for conventional lasers due to a lack of suitable laser gain materials. In the first part of the thesis the subject matter is concerned with the direct emission from laser devices. In particular, a broadly tunable InGaAs/InP strained multi-quantum well external cavity diode laser, operating in the spectral range of 1494 nm – 1667 nm with a maximum CW output power in excess of 81 mW and side-mode suppression ratio higher than 50 dB is demonstrated. This represents the highest output power and side-mode suppression ratio ever to be generated in this spectral region. A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm - 1324 nm), a maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB, is also demonstrated. This represents a promising achievement for the development of a high-power fast swept tunable laser and compact nonlinear frequency generation schemes for the green-yellow-orange-red spectral range. The second part of the thesis relates to induced nonlinear processes, focusing on frequency doubling and optical parametric oscillation. In particular, an all-room-temperature CW second harmonic generation at 612.9 nm and 591.5 nm in periodically poled potassium titanyl phosphate waveguides pumped by a broadly-tunable quantum-dot external cavity diode laser with a conversion efficiency of 10.5% and 7.9%, respectively, is demonstrated. For the first time, a green-to-red tunable laser source with tunability of over 60 nm (567.7 nm – 629.1 nm) based on frequency doubling in a single periodically poled potassium titanyl phosphate waveguide pumped by a single broadly-tunable quantum dot laser is demonstrated. These results are an important step towards a compact tunable coherent visible light source, operating at room temperature. The possibility of nonlinear frequency conversion in orientation-patterned GaAs waveguides is also investigated. The technology of low-loss periodically poled GaAs waveguided crystals is developed and such crystals are fabricated. Second harmonic generation at 1621 nm in low-loss periodically poled GaAs waveguide is demonstrated. An optical parametric oscillator system used as the pump source for GaAs devices and based on the periodically poled 5 mol% MgO-doped Congruent Lithium Niobate crystal, generating light in the wavelength range between 1430 nm and 4157 nm, is presented. The obtained results show a great promise for realisation of efficient quasi-phase-matched optical parametric oscillator devices based on orientation-patterned GaAs waveguides, which enables the extending generated wavelength up to 16 µm.

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Aßmann, Marc [Verfasser]. „Photon Statistics of Semiconductor Light Sources / Marc Aßmann“. Dortmund : Universitätsbibliothek Technische Universität Dortmund, 2011. http://d-nb.info/1011568535/34.

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Yang, Ying. „Organic semiconductor lasers : compact hybrid light sources and development of applications“. Thesis, University of St Andrews, 2010. http://hdl.handle.net/10023/2569.

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This thesis describes a number of studies on organic semiconductors as laser gain media with the aim of simplifying the excitation scheme and exploring potential applications. A hybrid device taking the advantage of high power inorganic light emitting diodes (LEDs) and low threshold organic distributed feedback lasers is demonstrated to realize a LED pumped organic laser. When the drive current is higher than 152 A, a sharp peak is clearly observed in the laser output spectrum, implying the LED successfully pumps the polymer laser above threshold. This is the first time an incoherent LED has been used as the excitation source for an organic semiconductor laser. A strategy for further improving the performance of the hybrid device is explored with the use of a luminescent concentrator made of a dye doped SU8 film, to intensify the power density from the inorganic LED. The luminescent concentrator is capable of increasing the incident power density by a factor of 9 and reducing the lasing threshold density by 4.5 times. As a preliminary investigation towards mode-locked polymer lasers, the impact of a solid state saturable absorber on a solution based organic semiconductor laser is explored. The dye doped polystyrene thin film saturable absorber exhibits a saturation intensity of a few MW/cm². When it is placed into the laser cavity, a train of short pulses is generated and the underlying mechanism is discussed. Finally, the potential of using organic semiconductor lasers in the detection of nitro-aromatic explosive vapours is studied in distributed feedback polyfluorene lasers. A high sensing efficiency and fast response from the laser prove polyfluorene lasers can be used as disposal and low cost devices in explosive chemosensing.

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Konthasinghe, Kumarasiri. „Resonant Light Scattering from Semiconductor Quantum Dots“. Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6527.

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In this work, resonant laser spectroscopy has been utilized in two major projects --resonance fluorescence measurements in solid-state quantum-confined nanostructures and laser-induced fluorescence measurements in gases. The first project focuses on studying resonant light-matter interactions in semiconductor quantum dots "artificial atoms" with potential applications in quantum information science. Of primary interest is the understanding of fundamental processes and how they are affected by the solid-state matrix. Unlike atoms, quantum dots are susceptible to a variety of environmental influences such as phonon scattering and spectral diffusion. These interactions alter the desired properties of the scattered light and hinder uses in certain single photon source applications. One application of current interest is the use of quantum dots in “quantum repeaters” for which two-photon interference is key. Motivated by such an application we have explored the limits imposed by environmental effects on two quantum dots in the same sample, the scattered light from which is being interfered. We find that both one-photon and two-photon interference, although substantial, are affected in a variety of ways, in particular by spectral diffusion. These observations are discussed and compared with a theoretical model. We further investigated correlations in pulsed resonance fluorescence, and found significant unexpected spectral and temporal deviations from those studied under continuous wave excitation. Under these conditions, the scattered light exhibits Rabi oscillations and photon anti-bunching, while maintaining a rich spectrum containing many spectral features. These observations are discussed and compared with a theoretical model. In the second project, the focus is on the investigation of the possibility of detecting N2+ ions in air using laser induced fluorescence, with potential applications in detection of fissile materials at a distance. A photon-counting analysis reveals that the fluorescence decay rate rapidly increases with increasing N2 pressure and thus limits the detection at elevated pressures, in particular at atmospheric pressure. We show that time-gated detection can be used to isolate N2+ fluorescence from delayed N2 emission. Based on the spontaneous Raman signal from N2 simultaneously observed with N2+ fluorescence, we could estimate a limit of detection in air of order 108-1010 cm3.

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Halpaap, Donatus. „Experimental study of speckle generated by semiconductor light sources: application in double pass imaging“. Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/668261.

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With the double pass (DP) technique it is possible to quantify the optical quality of a patient's eye by measuring its point spread function. Due to the low reflectivity of the retina a high-intensity, point-like illumination source is required. Usually laser diodes (LDs) are used, but the coherent laser light produces speckle, an interference phenomenon that deteriorates image quality and can make DP images difficult or impossible to interpret. A low-cost solution to reduce speckle in DP imaging is to include a vibrating mirror in the optical path of the system and average over the different speckle realizations. However, vibrating mechanical parts are undesired because they limit longevity and reliability of medical equipment. The goal of this thesis is to find an inexpensive non-mechanical solution for speckle reduction in DP imaging based on low-coherence semiconductor light sources. We compare an LD, a light-emitting diode (LED) and a superluminescent diode (SLED) in terms of speckle formation, cost and usability in DP systems. We find that the SLED is a good alternative to LD illumination, as the amount of speckle in the image is almost as low as that obtained with an LD and a vibrating mirror in the beam path. However, the SLED is not a low-cost solution. In order to identify a cost-efficient all-optical solution, we analyze the speckle generated by an LD as a function of its pump current. Our experiments suggest that driving the LD below the lasing threshold can be an inexpensive solution for speckle reduction. While undesired in many imaging applications, speckle can also contain useful information that is exploited, e.g., in blood flow analysis or for reconstruction of the object that generates the speckle pattern. We find that adjusting the pump current of an LD and the exposure time of the image acquisition system can be a simple and effective way to increase or reduce the amount of speckle by tailoring the coherence of light used for imaging. In particular, we identify conditions that allow to record images with similar average intensity, but with speckle contrast values as low as 0.16, or as high as 0.99.
Estudio experimental del speckle generado por fuentes de luz semiconductoras: aplicación en imágenes de doble paso Con la técnica de doble paso (DP) es posible cuantificar la calidad óptica del ojo de un paciente midiendo la función de dispersión de punto. Debido a la baja reflectividad de la retina, se requiere una fuente de luz puntual de alta intensidad. Una fuente de luz ampliamente utilizada en sistemas de DP son los diodos láser (LD). Los diodos láser son fuentes de luz coherentes que producen patrones de interferencia cuando se ilumina una superficie rugosa. Este fenómeno de interferencia, denominado speckle, deteriora la calidad de la imagen y puede hacer que las imágenes de DP sean difíciles o imposibles de interpretar. Una solución eficaz y de bajo coste para reducir el speckle en las imágenes de DP es incluir un espejo vibratorio en el camino óptico del sistema para promediar sobre las diferentes realizaciones de patrones de speckle. Sin embargo, las partes mecánicas vibratorias no son una solución óptima puesto que limitan la longevidad y fiabilidad de equipos médicos. El objetivo de esta tesis es encontrar una solución no mecánica de bajo coste para la reducción de speckle en imágenes de DP basada en fuentes de luz semiconductoras de baja coherencia. Comparamos un LD, un diodo emisor de luz (LED) y un diodo superluminiscente (SLED) en términos de formación de speckle, coste y usabilidad en sistemas de DP. Encontramos que el SLED es una buena alternativa a la iluminación con LD, ya que la cantidad de speckle en la imagen es prácticamente la misma que la obtenida con un LD y un espejo vibratorio. Sin embargo, el SLED no es una solución de bajo coste. Con el fin de identificar una solución totalmente óptica y económicamente rentable, analizamos los patrones de speckle generados por un LD en función de su corriente de bombeo. Nuestros experimentos sugieren que trabajar con corrientes por debajo del umbral del láser puede ser una solución económicamente viable para la reducción de speckle. En muchas aplicaciones de imaging se intenta evitar el speckle. De todas formas, el patrón de speckle puede contener información útil que se utiliza, por ejemplo, en el análisis del flujo sanguíneo o para la reconstrucción de objetos. Hemos observado que ajustar la corriente de bombeo de un LD (es decir, adaptar la coherencia de la luz utilizada para la toma de imágenes) puede ser una manera simple y efectiva de aumentar o reducir la cantidad de speckle. Para obtener imágenes con la misma intensidad hay que adaptar el tiempo de exposición del sistema de adquisición de imágenes. En particular, identificamos condiciones que permiten adquirir imágenes con una intensidad mediana similar, pero con valores de contraste de speckle que varían entre 0,16 y 0,99.
Estudi experimental de l’speckle generat per fonts de llum semiconductores: aplicació en imatges de doble pas Amb la tècnica de doble pas (DP) és possible quantificar la qualitat òptica de l’ull d’un pacient mesurant la funció de dispersió de punt. A causa de la baixa reflectivitat de la retina, es requereix una font de llum puntual d’alta intensitat. Una font de llum ampliament utilitzada en sistemes de DP són els díodes làser (LD). Els díodes làser són fonts de llum coherents que produeixen patrons d’interferència quan s’il·lumina una superficie rugosa. Aquest fenomen d’interferència, anomenat speckle, deteriora la qualitat de la imatge i pot fer que les imatges de DP siguin difícils o impossibles d’interpretar. Una solució eficaç i de baix cost per a reduir l’speckle en les imatges de DP és incloure un mirall vibratori en el camí òptic del sistema per tal de fer la mitjana sobre les diferents realitzacions de patrons d’speckle. No obstant, les parts mecàniques vibratòries no són una solució òptima ja que limiten la longevitat i fiabilitat d’equips mèdics. L’objectiu d’aquesta tesi és trobar una solució no mecànica de baix cost per a la reducció d’speckle en imatges de DP basada en fonts de llum semiconductores de baixa coherència. Comparem un LD, un díode emissor de llum (LED) i un díode superluminiscent (SLED) en termes de formació d’speckle, cost i usabilitat en sistemes de DP. Trobem que l’SLED és una bona alternativa a la il·luminació amb LD, ja que la reducció de la quantitat d’speckle en la imatge és pràcticament la mateixa que l’obtinguda amb un LD i un mirall vibratori. Tanmateix, l’SLED no és una solució de baix cost. Amb la finalitat d’identificar una solució totalment òptica i econòmicament rendible, analitzem els patrons d’speckle generats per un LD en funció del seu corrent de bombeig. Els nostres experiments suggereixen que treballar amb corrents per sota del llindar d’encesa del làser pot ser una solució econòmicament viable per a la reducció d’speckle. En moltes aplicacions d’imaging s’intenta evitar l’speckle. Tot i així, el patró d’speckle pot contenir informació útil que s’utilitza, per exemple, en l’anàlisi del flux sanguini o per a la reconstrucció d’objectes. Hem observat que ajustar el corrent de bombeig d’un LD (és a dir, adaptar la coherència de la llum utilitzada per a la presa d’imatges) pot ser una manera simple i efectiva d’augmentar o reduir la quantitat d’speckle. Per tal d’obtenir imatges amb la mateixa intensitat cal adaptar el temps d’exposició del sistema d’adquisició d’imatges. En particular, identifiquem condicions que permeten adquirir imatges amb una intensitat mitjana similar, però amb valors de contrast d’speckle que varien entre 0,16 i 0,99.

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De, Simoni Giorgio. „From anti-bunching to lasing: planar junctions in semiconductor heterostructures“. Doctoral thesis, Scuola Normale Superiore, 2013. http://hdl.handle.net/11384/85866.

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Bücher zum Thema "Semiconductor light sources"

Khanh, Tran Quoc, Peter Bodrogi und Trinh Quang Vinh. Color Quality of Semiconductor and Conventional Light Sources. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527803453.

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Manfred, Helm, Hrsg. Long wavelength infrared emitters based on quantum wells and superlattices. Amsterdam, Netherlands: Gordon & Breach, 2000.

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Khanh, Tran Quoc, Trinh Quang Vinh und Péter Bodrogi. Color Quality of Semiconductor and Conventional Light Sources. Wiley & Sons, Incorporated, John, 2016.

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Khanh, Tran Quoc, Trinh Quang Vinh und Péter Bodrogi. Color Quality of Semiconductor and Conventional Light Sources. Wiley & Sons, Incorporated, John, 2016.

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Khanh, Tran Quoc, Trinh Quang Vinh und Péter Bodrogi. Color Quality of Semiconductor and Conventional Light Sources. Wiley & Sons, Limited, John, 2017.

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Khanh, Tran Quoc, Trinh Quang Vinh und Péter Bodrogi. Color Quality of Semiconductor and Conventional Light Sources. Wiley & Sons, Incorporated, John, 2016.

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Color Quality of Semiconductor and Conventional Light Sources. Wiley & Sons, Limited, John, 2017.

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Andersen, Peter E., und Paul Michael Petersen, Hrsg. Semiconductor Lasers and Diode-based Light Sources for Biophotonics. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbhe007e.

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Petersen, Paul Michael, und Peter E. Andersen. Semiconductor Lasers and Diode-Based Light Sources for Biophotonics. Institution of Engineering & Technology, 2018.

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Petersen, Paul Michael, und Peter E. Andersen. Semiconductor Lasers and Diode-Based Light Sources for Biophotonics. Institution of Engineering & Technology, 2018.

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Buchteile zum Thema "Semiconductor light sources"

Amann, M. C. „Semiconductor Light Sources“. In Optical Properties of Semiconductors, 291–320. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-015-8075-5_10.

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Nezhad, Maziar P., Aleksandar Simic, Amit Mizrahi, Jin-Hyoung Lee, Michael Kats, Olesya Bondarenko, Qing Gu, Vitaliy Lomakin, Boris Slutsky und Yeshaiahu Fainman. „Nanoscale Metallo-Dielectric Coherent Light Sources“. In Compact Semiconductor Lasers, 1–32. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527655342.ch1.

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Späth, Werner. „Microoptical Structures for Semiconductor Light Sources“. In Microoptics, 253–59. New York, NY: Springer New York, 2004. http://dx.doi.org/10.1007/978-0-387-34725-7_14.

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Scholz, M., T. Aichele und O. Benson. „Quantum information with quantum dot light sources“. In Single Semiconductor Quantum Dots, 367–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-87446-1_11.

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Gies, Christopher, Matthias Florian, Alexander Steinhoff und Frank Jahnke. „Theory of Quantum Light Sources and Cavity-QED Emitters Based on Semiconductor Quantum Dots“. In Quantum Dots for Quantum Information Technologies, 3–40. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56378-7_1.

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Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov und Dmitrii I. Petukhov. „Brief Overview of the Literature on Nanostructural Electroluminescent Light Sources“. In Nanostructured Semiconductors in Porous Alumina Matrices, 1–17. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-1.

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Landgraf, Stephan. „Semiconductor Lights Sources in Modulation Fluorometry Using Digital Storage Oscilloscopes“. In Reviews in Fluorescence 2004, 341–63. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-0-306-48672-2_15.

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SHIELDS, ANDREW J. „Semiconductor quantum light sources“. In Nanoscience and Technology, 221–29. Co-Published with Macmillan Publishers Ltd, UK, 2009. http://dx.doi.org/10.1142/9789814287005_0023.

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„Semiconductor Lasers“. In Fundamentals of Light Sources and Lasers, 313–25. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2004. http://dx.doi.org/10.1002/0471675210.ch13.

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Shenoy, M. R. „Semiconductor Light Sources and Detectors“. In Guided Wave Optics and Photonic Devices, 167–202. CRC Press, 2017. http://dx.doi.org/10.1201/b14841-8.

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Konferenzberichte zum Thema "Semiconductor light sources"

Bhattacharya, Pallab, Michael Holub, Jonghyun Shin und Subhananda Chakrabarti. „Spin-polarized semiconductor light sources“. In Integrated Optoelectronic Devices 2005, herausgegeben von Diana L. Huffaker und Pallab K. Bhattacharya. SPIE, 2005. http://dx.doi.org/10.1117/12.606609.

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Sunday, Daniel F., Donald Windover und R. Joseph Kline. „Compact X-ray Sources for Metrology Applications in the Semiconductor Industry“. In Compact EUV & X-ray Light Sources. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/euvxray.2016.em6a.4.

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Omote, Kazuhiko, und Yoshiyasu Ito. „X-Ray CD Metrology for Determining Cross-Sectional Profile of Semiconductor Device Patterns“. In Compact EUV & X-ray Light Sources. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/euvxray.2016.em8a.1.

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Hansson, B. A. M., O. Hemberg, G. Johansson, M. Otendal, T. Tuohimaa und P. Takman. „Liquid-metal-jet X-ray tube technology for characterization and metrology in semiconductor applications“. In Compact EUV & X-ray Light Sources. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/euvxray.2016.em4a.1.

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Nagai, Haruo. „Semiconductor light sources for photonic sensing“. In Optical Fiber Sensors. Washington, D.C.: OSA, 1996. http://dx.doi.org/10.1364/ofs.1996.we41.

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Kim, Je Won. „Nano-sized rod array for semiconductor light sources“. In Light-Emitting Devices, Materials, and Applications XXV, herausgegeben von Martin Strassburg, Jong Kyu Kim und Michael R. Krames. SPIE, 2021. http://dx.doi.org/10.1117/12.2583380.

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Buck, Martin. „Considerations for light sources: For semiconductor light sensor test“. In 2015 20th International Mixed-Signal Testing Workshop (IMSTW). IEEE, 2015. http://dx.doi.org/10.1109/ims3tw.2015.7177862.

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Gregorich, Thomas, und Johannes Ruoff. „The Evolution of Moore’s Law and Opportunities for the Use of X-ray Systems to Analyze Advanced Semiconductor Packages“. In Compact EUV & X-ray Light Sources. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/euvxray.2020.ew3a.1.

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Senellart, Pascale. „Semiconductor quantum light sources: Progresses and applications“. In Photonics for Quantum. SPIE, 2021. http://dx.doi.org/10.1117/12.2603516.

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Koch, T. L. „Integrated tunable light sources for telecommunications“. In Conference Digest. 2004 IEEE 19th International Semiconductor Laser Conference. IEEE, 2004. http://dx.doi.org/10.1109/islc.2004.4612656.

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Berichte der Organisationen zum Thema "Semiconductor light sources"

Khitrova, Galina, und Hyatt M. Gibbs. Developing Rare-Earth Doped Semiconductor Light Sources. Fort Belvoir, VA: Defense Technical Information Center, Juni 1997. http://dx.doi.org/10.21236/ada329764.

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