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Dissertationen zum Thema „Silicène“

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1

Ben, Jabra Zouhour. "Study of new heterostructures : silicene on graphene." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0583.

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Le but de ce travail est la croissance du silicène sur Gr. J'ai décrit le substrat en fonction des conditions d’élaboration par CVD. Lorsque la proportion de H2 est faible il est possible d’obtenir du Gr homogène sur couche tampon (BL) sur SiC. Le STM et LEED montrent la superposition de la maille du Gr et de la reconstruction de la BL représentatif du Gr épitaxié. Lorsque la proportion de H2 est élevée la couche de Gr obtenue est totalement hydrogénée. Ceci est un résultat nouveau car aucun procédé d’intercalation d’hydrogène n’avait permis jusqu’à présent d’hydrogéner totalement les échantil
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2

Solonenko, Dmytro Ihorovych. "Vibrational properties of epitaxial silicene on Ag(111)." Doctoral thesis, Universitätsbibliothek Chemnitz, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-229702.

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This dissertation works out the vibrational properties of epitaxial silicene, which was discovered by Vogt et al. in 2012 by the epitaxial synthesis on the silver substrate. Its two-dimensional (2D) character is modified in comparison to the free-standing silicene due to its epitaxial nature, since the underlying substrate alters the physical properties of silicene as a result of the strong hybridization of the electronic levels of the substrate and adlayer. The growth of silicene layers is complicated by the sensitivity of the Si structures to the experimental conditions, mainly temperature,
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3

Solonenko, Dmytro Ihorovych. "Vibrational properties of epitaxial silicene on Ag(111)." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2016. https://monarch.qucosa.de/id/qucosa%3A20801.

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This dissertation works out the vibrational properties of epitaxial silicene, which was discovered by Vogt et al. in 2012 by the epitaxial synthesis on the silver substrate. Its two-dimensional (2D) character is modified in comparison to the free-standing silicene due to its epitaxial nature, since the underlying substrate alters the physical properties of silicene as a result of the strong hybridization of the electronic levels of the substrate and adlayer. The growth of silicene layers is complicated by the sensitivity of the Si structures to the experimental conditions, mainly temperature,
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4

Ji, Zhonghang. "Strain-induced Energy Band-gap Opening of Silicene." Wright State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=wright1432635166.

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5

Quertite, Khalid. "Silicene growth on insulating ultra-thin film of NaCl." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS467.

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Le silicène est l’équivalent du graphène pour le silicium avec une structure bidimensionnelle (2D). Il est supposé avoir des propriétés électroniques intéressantes comme les fermions de Dirac sans masse et présentant une grande mobilité des électrons. L’existence du silicène a été montrée récemment sur des substrats de métaux nobles comme l’argent ou l’or. Cependant les résultats montrent des interactions fortes entre la couche de silicène et le substrat métallique, ce qui a pour conséquence de détruire les propriétés électroniques intrinsèques du silicène. Dans le but de résoudre ce problème,
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Osborn, Tim H. "Ab Initio Simulations of Hydrogen and Lithium Adsorption on Silicene." Wright State University / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=wright1283177822.

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7

Benasutti, Patrick B. "Electronic and Structural Properties of Silicene and Graphene Layered Structures." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1348192958.

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8

Ji, Zhonghang. "Exploring Two-Dimensional Graphene and Silicene in Digital and RF Applications." Wright State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1576345750912449.

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9

Ince, Alper. "Investigation Of The Structural Properties Of Silicene Nanoribbons By Molecular Dynamics Simulations." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614331/index.pdf.

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With the emergence of nanotechnology, mankind has obtained the capability to manipulate materials at nanoscale and this led to the invention of a new group of novel materials like carbon nanotubes, graphene and quantum nanodots. Silicene nanoribbons (SiNRs) are one of the newest members of this nanomaterial family which has been synthesized very recently by deposition on silver substrates. A SiNR sheet is made up of a layer of two dimensional honeycomb structure solely composed of silicon atoms. In this thesis, structural and mechanical properties of SiNR are being investigated with the help o
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10

Curcella, Alberto. "Looking for silicene: studies of silicon deposition on metallic and semiconductor substrates." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9314/.

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Nel presente lavoro espongo i risultati degli esperimenti svolti durante la mia internship all’Institut des NanoSciences de Paris (INSP), presso l’Università Pierre et Marie Curie (Paris VI), nel team "Phisico-Chimie et Dynamique des Surfaces", sotto la supervisione del Dott. Geoffroy Prévot. L’elaborato è stato redatto e in- tegrato sotto la guida del Dott. Pasquini, del dipartimento di Fisica e Astronomia dell’Università di Bologna. La tesi s’inserisce nel campo di ricerca del silicene, i.e. l’allotropo bidimensionale del silicio. Il cosidetto free-standing silicene è stato predetto teoricam
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Zhou, Ruiping. "Structural And Electronic Properties of Two-Dimensional Silicene, Graphene, and Related Structures." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1341867892.

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12

Zhang, Kai. "Structure and growth of germanene and silicene on Ag and Al surfaces." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS438.

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De nombreuses propriétés intéressantes sont attendues des simulations théoriques pour le silicène et le germanène autoportants. Leur synthèse reste cependant controversée. Ce travail présente une étude expérimentale par microscopie à effet tunnel (STM) et par diffraction des rayons X en incidence rasante (GIXD) de la croissance du germanium et du silicium sur des surfaces métalliques. Trois systèmes ont été étudiés : Ge/Al(111), Ge/Ag(111) et Si/Ag(110). Différentes reconstructions ordonnées ont été observées par STM en fonction de la température de croissance. La STM en temps réel me permet d
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Huamaní, Correa Jorge Luis. "Estrutura eletrônica e propriedades de transporte quântico em nanoestruturas de grafeno e siliceno." reponame:Repositório Institucional da UnB, 2014. http://repositorio.unb.br/handle/10482/16469.

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Dissertação (mestrado)—Universidade de Brasília, Instituto de Física, Programa de Pós-Graduação em Física, 2014.<br>Submitted by Ana Cristina Barbosa da Silva (annabds@hotmail.com) on 2014-10-14T17:46:05Z No. of bitstreams: 1 2014_JorgeLuisHuamaniCorrea.pdf: 20726420 bytes, checksum: 750343fd3e2b899cfc4174ccc2d0b5bc (MD5)<br>Approved for entry into archive by Tania Milca Carvalho Malheiros(tania@bce.unb.br) on 2014-10-14T19:53:11Z (GMT) No. of bitstreams: 1 2014_JorgeLuisHuamaniCorrea.pdf: 20726420 bytes, checksum: 750343fd3e2b899cfc4174ccc2d0b5bc (MD5)<br>Made available in DSpace on 2014-10-
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Gill, T. G. "Modifying the electronic properties and magnetic interactions of the two-dimensional material silicene." Thesis, University College London (University of London), 2016. http://discovery.ucl.ac.uk/1532889/.

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As the pursuit for more powerful electronic devices progresses, individual components have had to be produced at ever smaller dimensions. Today, conventional technologies are at the edge of feasibility as they approach a fundamental limit at the atomic scale. Much research is aimed at overcoming the barrier to atomic scale devices, and indeed some of the explosion of interest into two-dimensional materials over the past decade has its roots in this goal. Graphene, the first atomically thin two-dimensional material, has since been followed by a growing number of intriguing materials with a wide
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Osborn, Tim H. "COMPUTATIONAL DESIGN AND CHARACTERIZATION OF SILICENE NANOSTRUCTURES FOR ELECTRICAL AND THERMAL TRANSPORT APPLICATIONS." Wright State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=wright1401712678.

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16

Araújo, Augusto de Lelis. "Investigação dos estados topologicamente protegidos em siliceno e germaneno." Universidade Federal de Uberlândia, 2014. https://repositorio.ufu.br/handle/123456789/15668.

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The main objective of this work is to research and obtain surface protected topological states in nano-ribbons created from the leaves of Germanene and Silicene. These sheets belong to the class of Topological Insulators and correspond to monolayers of germanium and silicon atoms in a hexagonal arrangement that is similar to the graphene sheet. For this investigation, we conducted a study of the electronic and structural properties of these sheets, as well as their respective nano-ribbons through first-principles calculations based on density functional theory (DFT). In this methodology we use
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UGOLOTTI, ALDO. "Investigating metal-organic/inorganic interfaces with different dimensionalities from first-principles." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2020. http://hdl.handle.net/10281/263113.

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La possibilità di controllare la materia alle dimensioni tipiche di qualche atomo ha permesso negli ultimi decenni enormi progressi in campo tecnologico. Questa miniaturizzazione è stata resa possibile dallo sviluppo di adeguate tecniche sperimentali di sintesi e controllo dei materiali, ma anche dall’introduzione di modelli teorici per descrivere i fenomeni fisici tramite il formalismo della meccanica quantistica. Questi modelli hanno permesso di descrivere la materia tramite approcci numerici, in modo da supportare, espandere ed anticipare i risultati sperimentali. Questo lavoro di tesi è co
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18

Le, Nam B. "Structure-Interaction Effects In Novel Nanostructured Materials." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6296.

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Recent advances in experimental and computational methods have opened up new directions in graphene fundamental studies. In addition to understanding the basic properties of this material and its quasi-one dimensional structures, significant efforts are devoted to describing their long ranged dispersive interactions. Other two-dimensional materials, such as silicene, germanene, and transition metal dichalcogenides, are also being investigated aiming at finding complementary to graphene systems with other "wonder" properties. The focus of this work is to utilize first principles simulations met
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SCALISE, EMILIO. "Vibrational Properties of Defective Oxides and 2D Nanolattices." Doctoral thesis, KuLeuven, 2013. http://hdl.handle.net/10281/181816.

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The nanoelectronic evolution, which was driven for many years by the ‘‘aggressive scaling’’ of the complementary metal-oxide-semiconductor (CMOS) devices, needs new approaches in order to face the demands for smaller, more performing, and less power-consuming integrated circuits. A few years ago, high-mobility semiconductors, e.g., germanium and III–V semiconductors, started to be investigated as possible substitutes of silicon as materials for the CMOS channel. On the other hand, dielectric materials with a higher dielectric constant (j) than the native silicon dioxide, such as HfO2, were
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Gustin, Diana Mercedes Meneses. "Propriedades de transporte, resolvido em spin, em estruturas de siliceno." reponame:Repositório Institucional da UFABC, 2013.

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21

Mehdi, Aghaei Sadegh. "Electronic and Magnetic Properties of Two-dimensional Nanomaterials beyond Graphene and Their Gas Sensing Applications: Silicene, Germanene, and Boron Carbide." FIU Digital Commons, 2017. http://digitalcommons.fiu.edu/etd/3389.

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The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models. I first explored the impact of edge functio
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Baklanov, Aleksandr [Verfasser], Wilhelm [Akademischer Betreuer] Auwärter, Wilhelm [Gutachter] Auwärter, and Alexander [Gutachter] Holleitner. "Silicon and Porphyrins: Molecular Nanosystems on Silicene and Noble Metal Surfaces / Aleksandr Baklanov ; Gutachter: Wilhelm Auwärter, Alexander Holleitner ; Betreuer: Wilhelm Auwärter." München : Universitätsbibliothek der TU München, 2021. http://d-nb.info/1230985417/34.

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23

Конобеева, Н. Н., та Д. С. Скворцов. "Моделирование влияния параметра порядка на световые пули в силицене". Thesis, Сумский государственный университет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/64316.

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В настоящее время среди многообразия нелинейных сред большой интерес вызывают среды с фазовым переходом (с параметром порядка) с точки зрения их практических применений. С другой стороны, возникает задача о спектроскопии параметра порядка в средах, способных выдержать экстремально сильные электромагнитные поля и в которых возможно устойчивое распространение световых пуль (СП). К ним относятся среды, содержащие силицен.
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Solonenko, Dmytro Ihorovych [Verfasser], Dietrich R. T. [Akademischer Betreuer] Zahn, Dietrich R. T. [Gutachter] Zahn, Patrick [Akademischer Betreuer] Vogt, and Lay Guy [Gutachter] Le. "Vibrational properties of epitaxial silicene on Ag(111) / Dmytro Ihorovych Solonenko ; Gutachter: Dietrich R.T. Zahn, Guy Le Lay ; Dietrich R.T. Zahn, Patrick Vogt." Chemnitz : Universitätsbibliothek Chemnitz, 2017. http://d-nb.info/1214818811/34.

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25

Beato, Medina Daniel. "Characterization of 2D architectures on metallic substrates by electron spectroscopy and microscopy." Thesis, Aix-Marseille, 2016. http://www.theses.fr/2016AIXM4730/document.

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La physique des surfaces et nanosciences est une discipline qui permet la conception d’une diversité de matériaux innovants pour mieux répondre aux besoins de la technologie actuelle. Dans ce contexte, nous nous sommes intéressés à caractériser les propriétés de différentes structures 2D élaborées sur des substrats d’argent en combinant différentes techniques d'analyses de surface.D'une part nous avons étudié des films 2D auto-assemblés à base de phtalocyanine de cobalt adsorbées sur Ag(100). Au régime de la monocouche, deux phases ont été essentiellement observées : la (5x5) et la (7x7). La s
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Martins, Mirkos Ortiz. "SIMULAC ~AO AB INITIO DE BASES NITROGENADAS INTERAGINDO COM NANOFITAS DE GRAFENO E SILICENO: PARAMETRIZAC ~AO E COMPARATIVO NOS DIFERENTES MATERIAIS." Centro Universitário Franciscano, 2016. http://www.tede.universidadefranciscana.edu.br:8080/handle/UFN-BDTD/570.

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Submitted by MARCIA ROVADOSCHI (marciar@unifra.br) on 2018-08-20T12:07:07Z No. of bitstreams: 2 license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) Tese_MirkosOrtizMartins.pdf: 14740958 bytes, checksum: 7fbd6b5923fb58ef079c134775d7e50d (MD5)<br>Made available in DSpace on 2018-08-20T12:07:07Z (GMT). No. of bitstreams: 2 license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) Tese_MirkosOrtizMartins.pdf: 14740958 bytes, checksum: 7fbd6b5923fb58ef079c134775d7e50d (MD5) Previous issue date: 2016-07-22<br>In this thesis is studied the interaction between the nit
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GRAZIANETTI, CARLO. "Scanning tunneling microscopy investigation of III-V compound semiconductors and novel 2D nanolattices." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2014. http://hdl.handle.net/10281/50028.

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The research activity described in this thesis is mainly devoted to study the fundamental properties of alternate channel materials to bulk silicon. Indeed, there is consensus, in the scientific and industrial community, that silicon is approaching its ultimate scaling limit. Today, increasing the performance of integrated circuits by scaling silicon metal-oxide-semiconductor field effect transistor (MOSFET) is becoming more and more difficult and, therefore, a systematic survey of possible alternate solutions should be considered. This purpose is taken into account by exploring two paradigmat
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Curcella, Alberto. "From silicen to Si films and clusters : silicon growth on Ag and layered materials studied by STM, GIXD and DFT." Electronic Thesis or Diss., Sorbonne université, 2018. http://www.theses.fr/2018SORUS410.

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Dans cet ouvrage, je résume les études menées au cours de ma thèse concernant la synthèse de monocouches de silicium, de couches minces de Si sur Ag(111) et des dépôts de Si sur des matériaux lamellaires. Je présente des résultats originaux qui ont dévoilés des phénomènes physiques intéressants associés aux systèmes étudiés. Dans une première partie, je présente les résultats d’une étude combinant expériences et théorie, basée sur des mesures GIXD et des simulations DFT, visant à déterminer la disposition atomique exacte des structures de la monocouche de silicène sur Ag(111). Ensuite, je décr
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Wirth, Luke J. "Thermoelectric Transport and Energy Conversion Using Novel 2D Materials." Wright State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=wright148433373077002.

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Tchalala, Mohamed Rachid. "Croissance et réactivité du silicène." Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112287/document.

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L’objet de cette thèse est l’étude de la croissance de silicène sur des substrats d’argent,ainsi que l’étude de sa réactivité vis-à-vis de l’oxygène. La croissance a été réalisée sous ultra-vide et contrôlée par spectroscopie d’électrons Auger (AES) et par diffraction d’électrons lents (LEED). Les structures obtenues et leurs réactivités à l’oxygène ont été étudiées par microscopie à champ proche (STM et nc-AFM) et par spectroscopie de photoémission résolue en angle (ARPES). Nous avons étudié la structure interne des nano-rubans de silicène auto-assemblés sur un substrat d’Ag(110). Sur Ag(111)
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Mrezguia, Hela. "Croissance et propriétés électroniques du silicène hétéroépitaxié sur B : Si(111)-(√3×√3)R30° et Ag/Si(111)-(√3×√3)R30°." Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0502.

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Ce travail expérimental porte sur la synthèse du silicène hétéroépitaxié sur des substrats Si(111) passivés par des atomes de bore ou d’argent. L’adsorption à température contrôlée d’une quantité de Si proche d’une monocouche sur les substrats B:Si(111)-(√3×√3)R30° et Ag/Si(111)-(√3×√3)R30°, mène à la formation, sur chaque substrat, d’une couche bidimensionnelle de Si, compacte et bien ordonnée, qui adopte la symétrie du substrat, que nous attribuons au silicène hétéroépitaxié. Nous avons utilisé le LEED, AES, IPES/ARIPES. La mesure du courant absorbé (TCS) et l’évolution du travail d’extracti
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Saroka, Vasil. "Theory of optical and THz transitions in carbon nanotubes, graphene nanoribbons and flat nanoclusters." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/28863.

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This thesis is devoted to the optical properties of low-dimensional structures based on such two-dimensional materials as graphene, silicene and phosphorene. We investigate optical properties of a variety of quasi-one dimensional and quasi-zero-dimensional structures, which are promising for future optoelectronics. Primarily we focus on their low-energy optical properties and how these properties are influenced by the structures’ geometry, external fields, intrinsic strain and edge disorder. As a consequence of this endeavor, we find several interesting effects such as correlation between the
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Mathis, Benoît. "Diagraphies et sédimentologie : traduction du message diagraphique et reconnaissance des systèmes sédimentaires : exemples des faciès hypersiliceux paléogènes et crétacés de l'offshore gabonais." Nancy 1, 1988. http://www.theses.fr/1988NAN10184.

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Après un rappel des différents types de diagraphies existants et leur méthode d'interprétation, on présente des systèmes d'analyse et de tracé de courbes automatiques. Plusieurs programmes automatiques d'étude des faciès et des séquences sédimentaires sont mentionnés. Puis, on applique ces méthodes au cas des faciès hypersiliceux de l'ouzouri et de l'anguille : opalite, chert, grès, silt et argiles siliceux, carbonates siliceux et argiles opalifères. On montre l'intérêt des diagraphies dans la détermination de la qualité des réservoirs potentiels. L'organisation spatio-temporelle des dépôts ga
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CHEN, CHIN-FU, and 陳進富. "Graphene Assisted Growth of Silicene." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/bcj2cp.

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碩士<br>國立中正大學<br>光機電整合工程研究所<br>105<br>Two-dimensional materials have special properties that make them interesting for electronic devices. Because of the many different possible types of two-dimensional materials we believe that combinations of two-dimensional materials could be used to make new and important devices. Therefore, we need a way to produce suitable two-dimensional materials. Unfortunately, such growth requires proper surface energy conditions, which makes certain two-dimensional materials hard to grow. We demonstrate a universal route for growth two-dimensional material. We resear
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Fang, Yen-chieh, and 方彥傑. "First-principles calculations of Silicene on Silicon Dioxide." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/r9dncf.

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碩士<br>國立交通大學<br>電子研究所<br>106<br>The tremendous advances of modern semiconductor technology has brought forth extraordinarily scaling down of transistors, while in the meantime it is approaching the bottleneck caused by the short-channel effect. One possible solution in overcoming this is to increase the gate-to-channel control or suppress the drain-side-voltage effect, such as the Fin Field-Effect Transistor. Another way to suppress the short-channel effect is to eliminate the region dominated by the drain-side electric field (v.s that from the gate), e.g. to fabricate a thinner channel, and t
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Hsieh, Chia-Yu, and 謝佳祐. "First-principles Calculations of Silicene on Hafnium Oxide." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/j3te92.

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碩士<br>國立交通大學<br>電子研究所<br>106<br>As the traditional silicon-based metal oxide semiconductor field-effect transistors approaching its miniaturization limit, search of alternative ultra-thin channel materials becomes an urgent issue. Silicon can form a two-dimensional single atomic layer, called “Silicene”. It has a graphene-like structure as well as in theoretical calculations both superhigh carrier mobility and controllable energy gap. These make it an ideal ultra- thin channel material. Moreover, with elements same as the present silicon electronic devices, it has a great advantage of zero int
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Lin, Yung-Ting, and 林勇廷. "A molecular dynamics study of mechanical properties of Silicene." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/59603154980786064318.

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碩士<br>國立中興大學<br>物理學系所<br>103<br>In this thesis, we study mechanical properties of silicon using Molecular dynamics (MD) simulation. The potential energy, atom dynamics, simulation steps in our study are considered. The structure and analysis of different types of silicone are presented. Finally the mechanics for surface stress and strain are proposed.
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Ran-PoLin and 林然博. "Electronic excitations of monolayer doped graphene , silicene and germanium." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/18560887958087712011.

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碩士<br>國立成功大學<br>物理學系<br>103<br>We calculate the energy dispersions and the electronic excitations of doped monolayer silicene , germanium and graphene by using the generlized tight-binding model and self-consistent theorem. Monolayer silicene and germanium , with the slightly buckled honeycomb geometric structures , have a small band gap which are opened by spin-orbital effect. On the other hand , monolayer graphene possesses the flat honeycomb structure with zero-gap energy bands. The features of excitation spectra are dominated by the Fermi energy , the band structure and t
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Lo, Guang-Yu, and 羅廣鈺. "First-principles Calculations of ZrO2/Silicene/ZrO2 Sandwich Structures." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/2z65k8.

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碩士<br>國立交通大學<br>電子研究所<br>106<br>As the state-of-the-art technology in semiconductor industry drives devices toward remarkably tiny dimension, the traditional Si-based MOSFETs will soon approach their scaling limits. An emerging development in this field is to find a replacement for the Si channel. A two-dimensional material consists of only a single atomic layer, being a good candidate of the MOSFET channel upon the ongoing scaling down. A two-dimensional silicon allotrope, silicene has its great advantage in being significantly compatible with the Si-based process. Silicene has a mobility two
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KhanhNguyen, Duy, and 阮維康. "Rich essential properties of graphene- and silicene-related systems." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/h2n43r.

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博士<br>國立成功大學<br>物理學系<br>107<br>Geometric, magnetic, and electronic properties of graphene- and silicene-related systems are investigated by the first-principles theoretical framework, including the adatom-diversified geometric structure, atom-dominated energy bands, spatial spin density distributions, spatial charge density distributions and its variations, and spin- and orbital-projected density of states (DOSs). Such physical quantities are sufficient to identify the critical chemical bondings. The essential properties are very sensitive to adatom concentration, adatom distributions, dop
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WU, Jia-Yuan, and 吳佳原. "The growth of silicene on Ag/Si(111)-(1x1) films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/06385313733504306011.

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碩士<br>國立臺灣師範大學<br>物理學系<br>104<br>After depositing silver on Si (111)-(7×7) by k-cell at 100K and annealing the substrate to 300℃,we got the flatten silver films on silicon substrate. We grow silicene on these silver films at different temperature and found four different types of silicene including 4×4、√13×√13-1、√13×√13-2、2√3×2√3 structure by using scanning tunneling microscope . We found that at higher depositing temperature the rate of 4×4 structure would increase .When we deposit more than 1 ML Si atoms,part of Si atoms will form second layer silicene and 2×2 arrangement. On the other hand,
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Lee, Guo-Wei, and 李國威. "Structure and Growth Evolution of Silicene on Ag(111) surface." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/40933389783149259051.

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博士<br>國立清華大學<br>物理系<br>103<br>Two-dimensional (2D) materials such as graphene exhibit peculiar and attractive properties because of the unique symmetry of honeycomb π-orbital network. A graphene-like 2D material consists of Si atom is referred to as silicene. However, since a silicene has been experimentally synthesized on Ag(111) surface, the overlayers superstructure are described as either the unit vectors of silicene based or the primitive cell vectors of Ag(111) lattice in previous studies. We conducted the low-temperature scanning tunneling microscopy (LT-STM), X-ray core-level photoemis
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FAN, YU-CHENG, and 范育誠. "Mechanical properties of graphene and silicene nanoribbons using molecular dynamics." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/09921607385722497433.

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博士<br>國立高雄應用科技大學<br>機械工程系<br>105<br>Molecular dynamics simulation (MD) is used to investigate the properties of the curved and planar monolayer graphene nanoribbons (GNRs) under boundary confinement. The wrinkles are formed in curved-armchair GNRs not in curved-zigzag GNRs. With temperatures of 300–900 K and curvature radii of 3–6 nm, the wavelength of wrinkles did not change obviously. In nanoindentation tests, the zigzag graphene comparing to the armchair graphene had the larger contact stiffness about 50%. Further the concave graphene comparing to the convex graphene showed the higher conta
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Jiang, Yi-Hua, and 呂健儀. "First-principles study of Metal adatoms-decorated silicene for hydrogen storage." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/zx27pm.

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碩士<br>國立高雄應用科技大學<br>光電與通訊工程研究所<br>104<br>We investigate hydrogen storage on metal adatoms-decorated silicene used by the simulation tool of Dmol3 of the First-principles method. We select the metal which are common alkali metal (Li、Na、K) and alkaline earth metal (Be、Mg、Ca) for metal adatoms-decorated silicene. In this study, the structures of metal adatoms-decorated silicene, are called the structures of "Silicene-X", and the X is metal atoms (ex:Silicene-Li). The type of hydrogen adsorption is classified physical adsorption for the Silicene-X structure is classified physical adsorption since
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Hsu, Hung-Chang, and 許宏彰. "The study of silicene and iron growth on semiconductor based substrate." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/51486200467042389685.

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博士<br>國立臺灣師範大學<br>物理學系<br>104<br>Part I Silicene growth Using scanning tunneling microscopy (STM), we studied the formation of Si monolayer grown on (√3×√3)R30° Ag-Ge(111) and Ag-Si(111) reconstructed surface, respectively. Thereafter, we also increase Ag thickness, where is formed 6~12 ML Ag(111) layer, to grow silicene. On √3Ag-Si(111), deposited Si exchange with Ag atom to form the new √3Ag-Si(111) islands without forming new Si monolayer. On √3Ag-Ge(111), the Ag-Si exchange behavior is suppressed by stable bonding of Ag and below Ge(111) substrate. We measure the isolated Si monolayer with
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Chao-ChengWang and 王照程. "Stability and electronic properties of alkali- and halogen-atom-adsorbed silicene nanoribbons." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/11847892460279900280.

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碩士<br>國立成功大學<br>物理學系<br>104<br>Despite the popularity of grapheme research in recent years, silicon is still the main material used in current semiconductor industries. From a more industrial point of view, the research on silicon based nanostructure paves a more practical development path for doth compatibility and economic reasons. The electronic structures of ASiNRs adsorbed with alkali metals and halogen elements are studied using the density functional theory based on screened exchange local density approximation method. The most preferable adsorption sites are found to be hollow and top
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Zheng-WeiLiu and 劉政緯. "First-Principles Calculations on Feature-Rich Electronic Properties of Aluminum-Adsorbed Silicene." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/4ct9ep.

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碩士<br>國立成功大學<br>物理學系<br>104<br>Graphene, silicene, and group IV graphene-related systems have already been very popular subjects for quite some time. Especially, it has unique structural, electronic properties and chemical properties. In this thesis, we use the first principle calculations to study the properties and simulate the electron density distribution of crystal by VASP. The study focuses on aluminum-adsorbed silicene, considering the case of extreme symmetric. Geometric structures, electronic Structures, charge distributions, and density of states (DOS) strongly depend on the differen
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SHEN, CHEIN-YU, and 沈建昱. "Mechanical properties of two-dimensional silicene and silyne nanoribbons using molecular dynamics simulation." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/pf6f73.

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碩士<br>國立高雄應用科技大學<br>機械工程系<br>106<br>This study investigated the mechanical properties and crack growth behavior of silicene using molecular dynamics simulation based on the effects of crack direction, crack length and temperature. The simulation results showed that the young's modulus does not change much ,when the length of the crack increases, but increases with the increase of the crack angle. When the temperature is increased to 500 K, the young's modulus will have a low value, mainly due to softening of the material at high temperatures. Comparing the armchair and the zigzag type, it can
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"Growth mechanism and interfacial electronic properties of graphene and silicene two dimensional semiconductor materials." 2013. http://library.cuhk.edu.hk/record=b5549746.

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自從2004年人們在實驗室上發現石墨烯以來,IV族二維半導體材料,例如石墨烯、硅烯等,由於其優異的電學、力學、光學、以及熱力學性質,受到學術界的廣泛關注。為了使IV族二維半導體材料得到廣泛引用,穩定地生長高質量的石墨烯、硅烯二維半導體材料以及透徹的理解石墨烯、硅烯二維半導體材料和襯底之間的界面特性成為至關重要的研究方向。本文對在銅表面用多環芳香烴形成石墨烯的生長機理以及石墨烯、硅烯和襯底之間的界面電子學特性進行了詳細的分析和研究。希望以此能對IV族二維半導體材料的廣泛應用具有促進作用,並且對合理的設計電子器件結構具有新的啟示。<br>首先,我們用密度泛函理論對在銅表面用多環芳香烴形成石墨烯的生長機理進行了研究。理論計算表明在銅表面多環芳香烴形成石墨烯的生長過程主要包括:(1)在銅表面的誘導下多環芳香烴脫氫,(2)這些已經脫氫的多環芳香烴在銅表面相互結合形成石墨烯。由於銅和碳的相互作用非常弱,所以在銅表面這些已經脫氫的多環芳香烴並不會進一步分解成更小的碳團簇或者單個的碳原子。因此多環芳香烴的空間幾何構型對於最終形成的石墨烯的質量以及最低成長溫度有至關重要的影響。提高生長溫度可以提升脫氫多環芳香烴的活性和熱運動性,從而提高最終生成的石墨烯的質量。六苯并苯由於具有和石墨烯相同的六重對稱性和晶格結構,所以其在低溫生長高質量石墨烯方面最具有優勢。<br>其次,我們就石墨烯和(0001)二氧化
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Kaloni, Thaneshwor P. "Structural, Electronic, Magnetic, and Vibrational Properties of Graphene and Silicene: A First-Principles Perspective." Diss., 2013. http://hdl.handle.net/10754/311368.

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This thesis covers the structural, electronic, magnetic, and vibrational properties of graphene and silicene. In Chapter I, we will start with an introduction to graphene and silicene. In Chapter II, we will briefly discuss about the methodology (i. e. density functional theory)In Chapter III, we will introduce band gap opening in graphene either by introducing defects/doping or by creating superlattices with h-BN substrate. In Chapter IV, we will focus on the structural and electronic properties of K and Ge-intercalated graphene on SiC(0001). In addition, the enhancement of the superconductin
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