Bibliografías temáticas / Bipolar transistor

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Literatura académica sobre el tema "Bipolar transistor"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 6 de septiembre de 2023

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Artículos de revistas sobre el tema "Bipolar transistor"

1

Maftunzada, S. A. L. "The Structure and Working Principle of a Bipolar Junction Transistor (BJT)". Physical Science International Journal 26, n.º 11-12 (31 de diciembre de 2022): 35–39. http://dx.doi.org/10.9734/psij/2022/v26i11-12772.

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We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.
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Kapen, Tilegen Abaiuly. "INSULATED-GATE BIPOLAR TRANSISTOR". Chronos 7, n.º 8(70) (13 de octubre de 2022): 32–35. http://dx.doi.org/10.52013/2658-7556-70-8-12.

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Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
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3

Knyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka y A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89". Journal of Physics: Conference Series 2086, n.º 1 (1 de diciembre de 2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.

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Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.
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Elamin, Abdenabi Ali y Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )". Journal of The Faculty of Science and Technology, n.º 6 (12 de enero de 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.
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Bleizgys, Vytautas y Andrius Platakis. "INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS". Mokslas - Lietuvos ateitis 2, n.º 1 (28 de febrero de 2010): 59–62. http://dx.doi.org/10.3846/mla.2010.013.

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The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.
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Doja, M. N., Moinuddin y Umesh Kumar. "High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors". Active and Passive Electronic Components 22, n.º 1 (1999): 51–73. http://dx.doi.org/10.1155/1999/58424.

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This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal small signal and the transient region of operations. The package uses a high frequency model non-linear circuit elements for accurate analysis. The package also uses transistor's lumped circuit model to calculate devices electrical parameters, and it also does dynamic simulation. It also includes the conventional model as a special case. Model verification has also been done by simulation.
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Gerding, M., T. Musch y B. Schiek. "Generation of short electrical pulses based on bipolar transistorsny". Advances in Radio Science 2 (27 de mayo de 2005): 7–12. http://dx.doi.org/10.5194/ars-2-7-2004.

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Abstract. A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority carriers that have been injected and stored across the base-collector junction under forward bias conditions. If the saturated transistor is suddenly reverse biased the pn-junction will appear as a low impedance until the stored charge is depleted. Then the impedance will suddenly increase to its normal high value and the flow of current through the junction will turn to zero, abruptly. A differentiation of the output signal of the transistor results in two short pulses with opposite polarities. The differentiating circuit is implemented by a transmission line network, which mainly acts as a high pass filter. Both the transistor technology (pnp or npn) and the phase of the transfer function of the differentating circuit influence the polarity of the output pulses. The pulse duration depends on the transistor parameters as well as on the transfer function of the pulse shaping network. This way of generating short electrical pulses is a new alternative for conventional comb generators based on steprecovery diodes (SRD). Due to the three-terminal structure of the transistor the isolation problem between the input and the output signal of the transistor network is drastically simplified. Furthermore the transistor is an active element in contrast to a SRD, so that its current gain can be used to minimize the power of the driving signal.
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Rajabi, Mehran, Mina Amirmazlaghani y Farshid Raissi. "Graphene-Based Bipolar Junction Transistor". ECS Journal of Solid State Science and Technology 10, n.º 11 (1 de noviembre de 2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.

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Graphene was considered likely to revolutionize the electronics industry. This expectation has not yet been fulfilled, mainly due to the non-ideal characteristics of graphene-based transistors. Here, we propose a novel graphene-based structure as a graphene-based bipolar junction transistor (G-BJT), a nanoscale transistor which has the ideal characteristics of the common BJT transistor. In this device, N-P-N regions are formed in the graphene channel by applying voltages to the three gates. The carrier concentrations, energy band diagrams, and current-voltage curves are measured and presented. The base-emitter junction shows a rectifying behavior with the ideality factor in the range of (2.8–3.2), the built-in potential of 0.38V, and the saturation current of 10−12 A. The G-BJT provides a minimum current gain of 20 at the base-width of 10 nm, a feature that cannot be easily obtained in Si-based BJTs. Interestingly, the current gain(β) can be controlled by the gate voltages in G-BJT and changes by 26.5% compared to the maximum value, which leads to the controllability of this proposed transistor. Identical BJT behavior, scalability down to nanometer range, large carrier mobility, along the controllable current gain of G-BJT make this transistor a good candidate for the next generation of the nanoelectronics industry.
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Wu, Dong Yan, Zhi Liang Tan, Li Yun Ma y Peng Hao Xie. "The Failure Modeling Analysis of Bipolar Silicon Transister Device Caused by ESD". Applied Mechanics and Materials 427-429 (septiembre de 2013): 929–32. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.929.

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With the development of electronic technology, the electronic threats faced by microwave semiconductor devices was increasingly serious.In order to study the electrostatic discharge damage mechanism of bipolar silicon transistors, this paper analyzed the basic physical characteristics of bipolar transistor in electrostatic discharge, such as kirk effect and current crowding effect. Through analysis the human body electrostatic discharge model, established the ESD electric injury model of bipolar silicon transistor. If we knew the production process parameter of devices, we can calculate the ESD damage threshold for designing bipolar silicon device and providing a theoretical basis of parameter optimization. Finally the common ESD damage criterion were analyzed from different angles.
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Mierzwinski, Piotr y Wieslaw Kuzmicz. "VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector". Electronics 12, n.º 8 (15 de abril de 2023): 1871. http://dx.doi.org/10.3390/electronics12081871.

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This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only to make field effect transistors but also to make bipolar transistors. Their structures differ in many ways from existing structures of bipolar transistors. The investigations reported here aim to answer the question: can VESTIC-based lateral bipolar transistors be useful as active devices, and can they be made technologically compatible with field effect VESTIC devices? The theoretical studies were followed by the fabrication and measurements of VESTIC-based p-n-p and n-p-n bipolar devices. Although the manufacturing technology available was far from optimal, working bipolar devices were obtained. The results show that VESTIC-based bipolar devices may achieve acceptable parameters if made with state-of-the-art manufacturing technology. The main outcome of the research reported in the paper is that p-n-p and n-p-n bipolar transistors with acceptable parameters may be fabricated, together with field effect devices, in VESTIC-based integrated circuits. As a result, the VESTIC technology could become the new original BiCMOS technology.
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Tesis sobre el tema "Bipolar transistor"

1

Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors". Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. Another part of the study involved measuring similar devices at different temperatures ranging from 298K to 377K. As a general trend, it was observed that device-to-device mismatch improved with increasing temperature.
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2

Antoniou, M. A. "SuperJunction insulated gate bipolar transistor". Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596130.

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The main achievement of this work is that we show that by intelligently coupling the ideas and designs from various power semiconductor devices, that do not combine under conventional approaches, we can lower the turn-off losses by a factor of 5 (or more) when compared to state-of-the-art medium-high voltage power devices, while maintaining a similarly low on-state voltage drop. In this work we propose an optimised SuperJunction IGBT. The impact of varying the net doping of the n and p drift layer pillars was investigated and the device was optimised to deliver the best trade-off between the on-state and switching performance through extensive numerical simulations, both at room and high temperatures. A PSPICE based model of the SuperJunction IGBT was also developed. The results obtained are in good agreement with the device simulations results. The model allows engineers access to a simple and cheap tool to test and evaluate the performance of the SJIGBT. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasite JFET is also included to account for the restricted current flow between two adjacent p-wells. Here we propose a Semi Superjunction IGBT that maintains a high static and dynamic avalanche breakdown while improving dramatically (by one to two orders of magnitude) the failure rate under cosmic ray exposure. This is unrepentant for any other devices in the field. As a result, this device can provide the solution to unexpected power device breakdowns and therefore save the cost in replacing them and the distraction caused. In the same manner, the introduction of the ‘disconnected p-pillar’ in the Semi-SJIGBT dramatically improves the on-state performance and switching-off speed of the device when compared to the conventional Field Stop IGBT.
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Lamontagne, Maurice. "Development of a statistical model for NPN bipolar transistor mismatch". Link to electronic thesis, 2007. http://www.wpi.edu/Pubs/ETD/Available/etd-053007-105648/.

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Gradinaru, Diana. "High-voltage RF silicon bipolar transistor". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0001/MQ45631.pdf.

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Hsu, C. W. "Advanced insulated gate bipolar transistor technologies". Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604680.

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The thesis aims at investigating the state-of-the-art The Insulated Gate Bipolar Transistor (IGBT) technologies and exploring novel device concepts based on the IGBT core in order to enhance device performance and functionality. First, a novel double gate IGBT (DG-IGBT) is demonstrated by numerical simulations and experimental verifications. The new device features a low-grain pnp transistor and an embedded thyristor to enhance the carrier concentration near the emitter side and thus improves the on-state performance. Second, a new IGBT structure featuring N+ islands in the buffer layer to control the on-state carrier density in the drift region is proposed. The new technique allows a precise control of the trade-off between on-state voltage drop and turn-off energy losses by simply adjusting the width and spacing of N+ islands on the mask (at the layout level rather than process level). Furthermore, the N+ islands technique can be used to produce a series of products with different specifications by only changing the mask layout. Finally, a new reverse-conducting IGBT (RC-IGBT) with an embedded thyristor is reported in this dissertation for the first time. The thyristor operates similarly to an anti-parallel diode in its on-state and therefore it can release stored energy in the inductive load when the IGBT turns off. The new RC-IGBT shows a “snapback-free” characteristic due to the existence of the thyristor. In addition, coupled with the N+ islands structures proposed before, the on-state performance and switching speed of the IGBT and thyristor can be optimised according to the requirements of the specific application.
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Xu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs". Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.

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Woods, Stephen John. "Simulation of photoactivated bipolar devices". Thesis, University of East Anglia, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267275.

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Chik, Hope Wuming. "Emitter-up heterojunction bipolar transistor-compatible laser". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0014/MQ34129.pdf.

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Hall, S. "An integrated Schottky-collector heterojunction bipolar transistor". Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384387.

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Hayes, R. C. "Temperature dependance of silicon bipolar transistor D.C. parameters". Thesis, University of Liverpool, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381268.

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Libros sobre el tema "Bipolar transistor"

1

Welter, Michael. Transistor dictionary: Bipolar transistors. Bonn: International Thomson, 1996.

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Semiconductors, Motorola. Bipolar power transistor data. [Geneva]: Motorola, 1985.

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Motorola. Bipolar power transistor data. 6a ed. (s.l.): Motorola, 1989.

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Motorola. Bipolar power transistor data. (s.l.): Motorola, 1985.

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The bipolar junction transistor. 2a ed. Reading, Mass: Addison-Wesley, 1989.

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Motorola. Bipolar power transistor data. 7a ed. Phoenix, AZ: Motorola, 1995.

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7

Gradinaru, Diana. High-voltage RF silicon bipolar transistor. Ottawa: National Library of Canada, 1999.

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8

Limited, Hitachi. Hitachi bipolar power transistor data book. 2a ed. [Tokyo]: Hitachi, 1995.

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Transistor dictionary: Bipolar transistors : Datenvergleichstabellen = comparision [sic] tables = tables d'équivalence = tablas comparativas. Bonn: IWT Verlag, 1996.

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Chink, Hope Wuming. Emitter-up heterojunction bipolar transistor compatible laser. Ottawa: National Library of Canada, 1998.

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Capítulos de libros sobre el tema "Bipolar transistor"

1

Herberg, Heiner. "Bipolar-Transistor". En Elektronik, 78–145. Wiesbaden: Vieweg+Teubner Verlag, 2002. http://dx.doi.org/10.1007/978-3-663-09913-0_3.

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Di Paolo Emilio, Maurizio. "Bipolar Transistor". En Microelectronics, 19–34. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-22545-6_2.

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Tietze, Ulrich, Christoph Schenk y Eberhard Gamm. "Bipolar Transistor". En Electronic Circuits, 33–167. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78655-9_2.

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Li, Sheng S. "Bipolar Junction Transistor". En Semiconductor Physical Electronics, 391–422. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0489-0_13.

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Gift, Stephan J. G. y Brent Maundy. "Bipolar Junction Transistor". En Electronic Circuit Design and Application, 41–87. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46989-4_2.

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Gift, Stephan J. G. y Brent Maundy. "Bipolar Junction Transistor". En Electronic Circuit Design and Application, 45–96. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79375-3_2.

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El-Kareh, Badih y Richard J. Bombard. "The Bipolar Transistor". En The Kluwer International Series in Engineering and Computer Science, 143–285. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-2275-7_3.

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Di Natale, Corrado. "Bipolar Junction Transistor". En Introduction to Electronic Devices, 151–80. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-27196-0_6.

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Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson y Vigyan (Vigs) Chandra. "Bipolar Transistor Amplification". En Electronic Devices and Circuit Fundamentals, 241–88. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003393139-7.

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Schubert, Thomas F. y Ernest M. Kim. "Bipolar Junction Transistor Characteristic". En Fundamentals of Electronics, 133–227. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-031-79873-3_3.

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Actas de conferencias sobre el tema "Bipolar transistor"

1

Feng, Milton y William Snodgrass. "Toward THz Transistor: Pseudomorphic Heterojunction Bipolar Transistors (PHBT)". En >2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics. IEEE, 2006. http://dx.doi.org/10.1109/icimw.2006.368756.

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Belić, Milivoj R., Milan Petrović, Jörg Leonardy y Friedemann Kaiser. "Optical Transistor Based on a Photorefractive Ring Cavity". En The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.ctue6.

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The invention of electronic transistors revolutionized the field of electronics. There have been many attempts to achieve transistor action in different optical circuits [1]. Photorefractive materials possess features (strong response at low power levels and parallel processing) which are convenient for realization of optical circuits that, are functionally similar to different, electronic devices [2]. We use these advantages to propose an optical transistor based on a bidirectional PR ring resonator, whose operation is functionally similar to the operation of a bipolar junction transistor.
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Lozanova, Siya, Martin Ralchev y Chavdar Roumenin. "Bipolar Transistor based Magnetogradiometer". En 2021 XXXI International Scientific Symposium Metrology and Metrology Assurance (MMA). IEEE, 2021. http://dx.doi.org/10.1109/mma52675.2021.9610911.

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SILARD, Andrei y Gabriel NANI. "TILBW Bipolar Power Switching Transistor". En 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.a-2-2.

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Alivov, Ya I., Q. Fan, X. Ni, S. Chevtchenko, I. B. Bhat y H. Morkoç. "AlGaN/SiC heterojunction bipolar transistor". En Integrated Optoelectronic Devices 2008, editado por Hadis Morkoç, Cole W. Litton, Jen-Inn Chyi, Yasushi Nanishi y Euijoon Yoon. SPIE, 2008. http://dx.doi.org/10.1117/12.763143.

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Kuźmicz, Wiesław y Piotr Mierzwiński. "Bipolar transistor in VESTIC technology". En Electron Technology Conference 2013, editado por Pawel Szczepanski, Ryszard Kisiel y Ryszard S. Romaniuk. SPIE, 2013. http://dx.doi.org/10.1117/12.2031182.

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Liang, Lin y Petrosky. "A dynamic thermo-feedback model for bipolar transistor". En Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617508.

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Rodwell, M. J. W., J. Rode, H. W. Chiang, P. Choudhary, T. Reed, E. Bloch, S. Danesgar et al. "THz Indium Phosphide Bipolar Transistor Technology". En 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012. http://dx.doi.org/10.1109/csics.2012.6340091.

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Tianbing Chen y James Ma. "Advances in bipolar junction transistor modeling". En 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667345.

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Eberhardt, J. y E. Kasper. "200GHz SiGe Hetero Bipolar Transistor Design". En 30th European Solid-State Device Research Conference. IEEE, 2000. http://dx.doi.org/10.1109/essderc.2000.194842.

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Informes sobre el tema "Bipolar transistor"

1

Rodwell, Mark, M. Urtega, D. Scott, M. Dahlstrom y Y. Betser. Ultra High Speed Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, enero de 2000. http://dx.doi.org/10.21236/ada413790.

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Miller, D. L. y P. M. Asbeck. Fundamental Aspects of Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, julio de 1986. http://dx.doi.org/10.21236/ada171225.

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Gillespie, James K. AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development. Fort Belvoir, VA: Defense Technical Information Center, octubre de 2001. http://dx.doi.org/10.21236/ada415646.

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Nerurkar, Swarupa. Modeling and Simulation of Bipolar Transistor at Low Temperature. Portland State University Library, enero de 2000. http://dx.doi.org/10.15760/etd.6498.

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Patrizi, G. A., M. L. Lovejoy, R. P. Jr Schneider, H. Q. Hou y P. M. Enquist. Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies. Office of Scientific and Technical Information (OSTI), diciembre de 1995. http://dx.doi.org/10.2172/212553.

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Long, Stephen I., Herbert Kroemer y M. A. Rao. Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic. Fort Belvoir, VA: Defense Technical Information Center, octubre de 1986. http://dx.doi.org/10.21236/ada174580.

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Schaeffer, Daniel. Very High Frequency Bipolar Junction Transistor Frequency Multiplier Drive Network Design and Analysis. Portland State University Library, enero de 2000. http://dx.doi.org/10.15760/etd.6907.

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Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, febrero de 2015. http://dx.doi.org/10.21236/ada616757.

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Mitchell, Gregory A. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms. Fort Belvoir, VA: Defense Technical Information Center, septiembre de 2011. http://dx.doi.org/10.21236/ada552934.

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Liou, Chorng-Lii. An improved formulation of the temperature dependence of the Gummel-Poon bipolar transistor model equations. Portland State University Library, enero de 2000. http://dx.doi.org/10.15760/etd.6217.

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