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Tesis sobre el tema "Electrical and Computer Engineering. Metal oxide semiconductors"

Autor: Grafiati

Publicado: 4 de junio de 2021

Última modificación: 16 de febrero de 2022

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1

Bonhome, Waldack. "Analysis of the lateral diffuse metal-oxide semiconductor (LDMOS) power amplifier for cellular base stations." FIU Digital Commons, 2003. http://digitalcommons.fiu.edu/etd/1727.

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The primary purpose of this thesis was to present a theoretical large-signal analysis to study the power gain and efficiency of a microwave power amplifier for LS-band communications using software simulation. Power gain, efficiency, reliability, and stability are important characteristics in the power amplifier design process. These characteristics affect advance wireless systems, which require low-cost device amplification without sacrificing system performance. Large-signal modeling and input and output matching components are used for this thesis. Motorola's Electro Thermal LDMOS model is

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2

Shen, Pin-Chun. "Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112003.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 54-55).<br>Two-dimensional semiconducting materials such as MoS₂ and WS₂ have been attractive for use in ultra-scaled electronic and optoelectronic devices because of their atomically-thin thickness, direct band gap, and lack o

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3

Mahooti, Rabe'eh. "A CMOS circuit generator using differential pass transistors for implementing Boolean functions." PDXScholar, 1988. https://pdxscholar.library.pdx.edu/open_access_etds/3805.

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This study uses differential pass transistor methodology for implementing and evaluating Boolean functions. The main goal is investigation of CMOS and nMOS approaches in pass transistor logic design. Pass-transistor logic is most effective in the implementation of Boolean functions when the vectors are in the same format. It has been demonstrated that nMOS pass transistor logic driven by a control signal voltage above the V dd level offers a significant improvement in speed. nMOS pass transistorsalso offer less area consumption in comparison to the CMOS approach. The philosophy developed here

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4

Skaria, Giji. "Class F and inverse class F power amplifier subject to electrical stress effect." Master's thesis, University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5038.

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This study investigated the Class F and inverse Class F RF power amplifier operating at 5.8 GHz. The major challenging issue in design and implementation of CMOS power transistor is the breakdown voltage especially in sub-micron CMOS technologies. In order to eliminate this problem a Cascode topologies were implemented to reduce the Drain-to-Source voltage (stress). A Cascode Class F & Inverse Class F RF power amplifier were designed, and optimized in order to improve efficiency and reliability using 0.18micrometers] CMOS technology process. A 50% decrease in the stress has been achieved in th

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5

Jia, Joey Zong-yi. "Voltage controlled resistance model for MOS transistors." PDXScholar, 1988. https://pdxscholar.library.pdx.edu/open_access_etds/3802.

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The voltage controlled resistance model is developed for a reliable MOS transistor resistance mapping. The model includes both system and local parameters, and incorporates the effect of rise and fall time variations on the gate delay. MOS transistor resistance mapping is applied in logic simulation and timing verification. Also, it can be used in automatic transistor sizing and critical path analysis.

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6

Peršun, Marijan. "Scaling of the Silicon-on-Insulator Si and Si1-xGex p-MOSFETs." PDXScholar, 1995. https://pdxscholar.library.pdx.edu/open_access_etds/4934.

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Two-dimensional numerical simulation was used to study the scaling properties of SOI p-MOSFETs. Based on the design criteria for the threshold voltage and DIBL, a set of design curves for different designs was developed. Data for subthreshold slope, SCE and threshold voltage sensitivity to silicon film thickness are also given. Results show that short-channel effects can be controlled by increasing the doping level or by thinning the silicon film thickness. The first approach is more effective for p+ gate design with high body doping, while the second approach is much more effective for n+ gat

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7

Zhou, Sida. "Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET." PDXScholar, 1995. https://pdxscholar.library.pdx.edu/open_access_etds/4954.

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With increasing demand for complex and faster circuits, CMOS technologies are progressing towards the deep-submicron level. Process complexity increases dramatically, and costly techniques are to be developed to create dense field isolation and shallow junctions. Silicon-On-Insulator (SOI) may solve some of these problems. On the other hand, strained Si 1_xGex layers have been successfully grown on Si substrates and demonstrated much higher hole mobility than bulk Si. This can be used to build high-mobility p-MOSFET with a buried Si 1_xGex channel. A high mobility p-MOSFET would improve both t

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8

Xiao, Haiqiao. "Design of Radio-Frequency Filters and Oscillators in Deep-Submicron CMOS Technology." PDXScholar, 2008. https://pdxscholar.library.pdx.edu/open_access_etds/5233.

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Radio-frequency filters and oscillators are widely used in wireless communication and high-speed digital systems, and they are mostly built on passive integrated inductors, which occupy a relative large silicon area. This research attempted to implement filters and oscillators operating at 1-5 GHz using transistors only, to reduce the circuits’ area. The filters and oscillators are designed using active inductors, based on the gyrator principle; they are fabricated in standard digital CMOS technology to be compatible with logic circuits and further lower the cost. To obtain the highest operati

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9

Nehl, Albert Henry. "Investigation of techniques for high speed CMOS arbitrary waveform generation." PDXScholar, 1990. https://pdxscholar.library.pdx.edu/open_access_etds/4109.

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Today a growing number of applications in design engineering, production and environmental testing, and system service require specific analog waveforms and digital patterns. Such requirements are neither satisfactorily nor easily met by the use of standard function or single purpose, custom generators. Traditional methods of waveform generation suffer from undesirable complexity or mediocre performance and are otherwise limited. For the majority of arbitrary waveform generation applications, including medical engineering, modal analysis and electronic engineering, direct digital synthesis tec

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10

Chan, Chi Hang. "A study on comparator and offset calibration techniques in high speed Nyquist ADCs." Thesis, University of Macau, 2011. http://umaclib3.umac.mo/record=b2493284.

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11

Beck, Riley D. "High Voltage Analog Design in a Standard Digital CMOS Process." Diss., CLICK HERE for online access, 2005. http://contentdm.lib.byu.edu/ETD/image/etd1092.pdf.

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12

Genz, Adrian P. "Operational Amplifier Bandwidth Extension Using Negative Capacitance Generation." Diss., CLICK HERE for online access, 2006. http://contentdm.lib.byu.edu/ETD/image/etd1383.pdf.

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13

Choudhary, Aarti. "A process variation tolerant self compensation sense amplifier design." Connect to this title, 2008. http://scholarworks.umass.edu/theses/166/.

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14

Bartholomew, David Ray. "Design of a High Speed Mixed Signal CMOS Mutliplying Circuit." Diss., CLICK HERE for online access, 2004. http://contentdm.lib.byu.edu/ETD/image/etd362.pdf.

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15

Remund, Craig Timothy. "Design of CMOS Four-Quadrant Gilbert Cell Multiplier Circuits in Weak and Moderate Inversion." Diss., CLICK HERE for online access, 2004. http://contentdm.lib.byu.edu/ETD/image/etd611.pdf.

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16

Tang, Hui M. Eng Massachusetts Institute of Technology. "Near room temperature lithographically processed metal-oxide transistors." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/46524.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.<br>Includes bibliographical references (p. 75-76).<br>A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, zinc indium oxide (ZIO) as the semiconducting channel, and parylene as the dielectric was used to demonstrate the feasibility of such a low temperature lithographic process. This low processing temperatur

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17

Wood, Vanessa Claire. "Electrical excitation of colloidally synthesized quantum dots in metal oxide structures." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/58454.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 163-172).<br>This thesis develops methods for integrating colloidally synthesized quantum dots (QDs) and metal oxides in optoelectronic devices, presents three distinct light emitting devices (LEDs) with metal oxides surrounding a QD active layer, and uses these novel metal oxide based QD-LEDs to study mechanisms for electrical excitation of QDs. QD-LEDs have generated considerable interest for ap

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18

Wang, Annie I. (Annie I.-Jen) 1981. "Low temperature lithographically patterned metal oxide transistors for large area electronics." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/66471.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 167-184).<br>Optically transparent, wide bandgap metal oxide semiconductors are a promising candidate for large-area electronics technologies that require lightweight, temperature-sensitive flexible substrates. Because these thin films retain relatively high carrier mobilities even in an amorphous state, metal oxide-based field effect transistors (FETs) can be processed at near-room temperatures.

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19

Kencke, David Leighton. "Simulation and control of secondary electron programming in flash EEPROM's /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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20

Sun, Da Peng. "Process compensated CMOS temperature sensor exploiting piecewise base recombination current." Thesis, University of Macau, 2018. http://umaclib3.umac.mo/record=b3950680.

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21

Baker, Eric Albert. "The design of a CMOS sensor camera system for a nanosatellite." Thesis, Stellenbosch : University of Stellenbosch, 2006. http://hdl.handle.net/10019/493.

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22

Gao, Hantian. "Nanoscale Characterization and Control of Native Point Defects in Metal Oxide Semiconductors and Device Structures." The Ohio State University, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu1618838504594148.

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23

Richard, Brandon Demar. "Thermal Infrared Reflective Metal Oxide Sol-Gel Coatings for Carbon Fiber Reinforced Composite Structures." Scholar Commons, 2013. http://scholarcommons.usf.edu/etd/4569.

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Recent trends in composite research include the development of structural materials with multiple functionalities. In new studies, novel materials are being designed, developed, modified, and implemented into composite designs. Typically, an increase in functionality requires additional material phases within one system. The presence of excessive phases can result in deterioration of individual or overall properties. True multi-functional materials must maintain all properties at or above the minimum operating limit. In this project, samples of antimony and cobalt-doped tin oxide (ATO(Co2

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24

Khawaja, Mohamad. "Synthesis and Fabrication of Graphene/Conducting Polymer/Metal Oxide Nanocomposite Materials for Supercapacitor Applications." Scholar Commons, 2015. http://scholarcommons.usf.edu/etd/5715.

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The rising energy consumption worldwide is leading to significant increases in energy production with fossil fuels being the major energy source. The negative environmental impact of fossil fuel use and its finite nature requires the use of alternative sources of energy. Solar energy is a clean alternative energy source; however, its intermittent nature is a major impediment that needs to be reduced or eliminated by the development of cost effective energy storage. Thermal storage in tanks filled typically with molten salt at elevated temperatures is widely used in concentrating solar power pl

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25

Ramanathan, Sivakumar. "Optical and electrical properties of compound and transition metal doped compound semiconductor nanowires." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/1667.

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Nanotechnology is the science and engineering of creating functional materials by precise control of matter at nanometer (nm) length scale and exploring novel properties at that scale. It is vital to understand the quantum mechanical phenomena manifested at nanometer scale dimensions since that will enable us to precisely engineer quantum mechanical properties to realize novel device functionalities. This dissertation investigates optical and electronic properties of compound and transition metal doped compound semiconductor nanowires with a view to exploiting them for a wide range of applicat

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26

Badenhorst, Le Roux. "Cryogenic amplifiers for interfacing superconductive systems to room temperature electronics." Thesis, Stellenbosch : Stellenbosch University, 2008. http://hdl.handle.net/10019.1/1586.

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Thesis (MScEng (Electrical and Electronic Engineering))--Stellenbosch University, 2008.<br>This thesis is aimed at testing commercially available CMOS amplifier ICs at 4 K. Super Conducting Electronics (SCE) will also be used to amplify RSFQ signals for easier detection by CMOS technology and better signal-to-noise ratios. The SCE comprises of a Suzuki stack amplifier, a 250 μA JTL and a DC-to-SFQ converter. The Suzuki stack amplifier is simulated in WRSPICE. It is able to amplify an SFQ signal synchronised with an external clock signal. The amplified signal can then be detected by a no

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27

Shea, Patrick Michael. "Lateral power MOSFETs hardened against single event radiation effects." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4705.

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The underlying physical mechanisms of destructive single event effects (SEE) from heavy ion radiation have been widely studied in traditional vertical double-diffused power MOSFETs (VDMOS). Recently lateral double-diffused power MOSFETs (LDMOS), which inherently provide lower gate charge than VDMOS, have become an attractive option for MHz-frequency DC-DC converters in terrestrial power electronics applications. There are growing interests in extending the LDMOS concept into radiation-hard space applications. Since the LDMOS has a device structure considerably different from VDMOS, the well

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28

Gibson, Jr Allen. "Design and simulation of CMOS active mixers." Master's thesis, University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4765.

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This paper introduces a component of the Radio Frequency transceiver called the mixer. The mixer is a critical component in the RF systems, because of its ability for frequency conversion. This passage focuses on the design analysis and simulation of multiple topologies for the active down-conversion mixer. This mixer is characterized by its important design properties which consist of conversion gain, linearity, noise figure, and port isolation. The topologies that are given in this passage range from the most commonly known mixer design, to implemented design techniques that are used to incr

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29

Apicella, Fernandez Sergio. "Surface energy modification of metal oxide to enhance electron injection in light-emitting devices : charge balance in hybrid OLEDs and OLETs." Thesis, Högskolan i Gävle, Avdelningen för elektronik, matematik och naturvetenskap, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25097.

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Organic semiconductors (OSCs) present an electron mobility lower by several orders of magnitude than the hole mobility, giving rise to an electron-hole charge imbalance in organic devices such as organic light-emitting diodes (OLEDs) and organic light-emitting transistors (OLETs). In this thesis project, I tried to achieve an efficient electron transport and injection properties in opto-electronic devices, using inorganic n-type metal oxides (MOs) instead of organic n-type materials and a polyethyleneimine ethoxylated (PEIE) thin layer as electron transport (ETLs) and injection layers (EILs),

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30

Liu, Yidong. "CMOS RF cituits sic] variability and reliability resilient design, modeling, and simulation." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4969.

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Simulation of different aging rate also shows that the sensitivity of LNA is further reduced with the accelerated aging of the biasing circuit. Thus, for majority RF transceiver circuits, the adaptive body biasing scheme provides overall performance resilience to the device reliability induced degradation. Also the tuning ability designed in RF PA and LNA provides the circuit post-process calibration capability.; The work presents a novel voltage biasing design that helps the CMOS RF circuits resilient to variability and reliability. The biasing scheme provides resilience through the threshold

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31

Wang, Yun. "High frequency techniques for advanced MOS device characterization." 2008. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17235.

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32

Wu, Jian. "Design and fabrication of 4H silicon carbide MOSFETS." 2009. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051080.

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33

Zhong, Jian. "Optical properties of zinc oxide nanotips and their device applications." 2007. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.15770.

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34

Irez, Kagan. "Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies." Thesis, 2015. https://doi.org/10.7916/D86D5S5P.

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This dissertation explores the characteristics of Monotonic-Static CMOS and its potential applications in leakage reduction in ultra scaled Bulk-Si technology with significant gate leakage currents. Using test circuits consisting of different configurations of 16-bit lookahead adders, we performed a comparison among static, monotonic static and domino logic in terms of various properties including power, delay, noise margin and area. Comparisons were done over a wide range of possible transistor widths to fully characterize the tradeoffs for each circuit type. Experimental results show that MS

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35

Wang, Kai. "Transparent Oxide Semiconductors: Fabrication, Properties, and Applications." Thesis, 2008. http://hdl.handle.net/10012/3676.

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Transparent oxide semiconductors (TOSs) are materials that exhibit electrical conduction and optical transparency. The traditional applications of these materials are transparent conducting oxides in flat-panel displays, light-emitting diodes, solar cells, and imaging sensors. Recently, significant research has been driven to extend state-of-the-art applications such as thin-film transistors (TFTs). A new and rapidly developing field is emerging, called transparent electronics. This thesis advances transparent electronics through developing a new technique to fabricate TOSs and demonstrating t

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36

Wang, Xuguang Kwong Dim-Lee. "A novel high-K SONOS type non-volatile memory and NMOS HfO₂ Vth instability studies for gate electrode and interface threatment effects." 2005. http://repositories.lib.utexas.edu/bitstream/handle/2152/2089/wangx82253.pdf.

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37

Zhu, Jianxun. "Architectures and Circuit Techniques for High-Performance Field-Programmable CMOS Software Defined Radios." Thesis, 2017. https://doi.org/10.7916/D8TX3SNZ.

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Next-generation wireless communication systems put more stringent performance requirements on the wireless RF receiver circuits. Sensitivity, linearity, bandwidth and power consumption are some of the most important specifications that often face tightly coupled tradeoffs between them. To increase the data throughput, a large number of fragmented spectrums are being introduced to the wireless communication standards. Carrier aggregation technology needs concurrent communication across several non-contiguous frequency bands, which results in a rapidly growing number of band combinations. Suppor

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38

Wang, Xuguang. "A novel high-K SONOS type non-volatile memory and NMOS HfO₂ Vth instability studies for gate electrode and interface threatment effects." Thesis, 2005. http://hdl.handle.net/2152/2089.

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39

Shekar, Siddharth. "Design of custom CMOS amplifiers for nanoscale bio-interfaces." Thesis, 2019. https://doi.org/10.7916/d8-kb2p-zm21.

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The miniaturization of electronics is a technique that holds a lot of potential in improving system performance in a variety of applications. The simultaneous miniaturization of sensors into the nano-scale has provided new ways to probe biological systems. Careful co-design of these electronics and sensors can unlock measurements and experiments that would otherwise be impossible to achieve. This thesis describes the design of two such instrumentation amplifiers and shows that significant gains in temporal resolution and noise performance are possible through careful optimization. A cust

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40

Realov, Simeon Dimitrov. "Combined C-V/I-V and RTN CMOS Variability Characterization Using An On-Chip Measurement System." Thesis, 2012. https://doi.org/10.7916/D85H8P3D.

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With the number of transistors integrated into a single integrated circuit (IC) crossing the one-billion mark and complementary metal-oxide-semiconductor (CMOS) technology scaling pushing device dimensions ever-so-close to atomic scales, variability in transistor performance is becoming the dominant constraint in modern-day CMOS IC design. Developing novel approaches for device characterization, which allow a detailed study of electrical transistor characteristics across large statistical sample sets, is crucial for the proper identification, characterization, and modeling of different physica

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41

Sharma, Jahnavi. "CMOS Signal Synthesizers for Emerging RF-to-Optical Applications." Thesis, 2018. https://doi.org/10.7916/D85Q66Z4.

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The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications li

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42

Warren, Steven Benjamin. "CMOS Integration of Single-Molecule Field-Effect Transistors." Thesis, 2016. https://doi.org/10.7916/D8K937R9.

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Point functionalized carbon nanotubes have recently demonstrated the ability to serve as single-molecule biosensors. Operating as single-molecule Field-Effect Transistors (smFET), the sensors have been used to explore activity ranging in scope from DNA hybridization kinetics to DNA polymerase functionality. High signal levels and an all-electronic label-free transduction mechanism make the smFET an attractive candidate for next-generation medical diagnostics platforms and high-bandwidth basic science research studies. In this work, carbon nanotubes are integrated onto a custom designed CMOS ch

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43

Edrees, Hassan. "Monolithically Integrated Acoustic Resonators on CMOS for Radio-Frequency Circuit Applications." Thesis, 2016. https://doi.org/10.7916/D8X63N7M.

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Wireless communication circuits rely on the use of high-quality passive elements (inductor-capacitor resonant tanks) for the implementation of selective filters and high-purity frequency references (oscillators). Typically available CMOS, on-chip passives suffer from high losses, primarily inductors, and consume large areas that cannot be populated by transistors leading to a significant area penalty. Mechanical resonators exhibit significantly lower losses than their electrical counterparts due to the reduced parasitic loss mechanisms in the mechanical domain. Efficient transduction schemes s

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44

Aklimi, Eyal. "Magnetics and GaN for Integrated CMOS Voltage Regulators." Thesis, 2016. https://doi.org/10.7916/D87H1JQS.

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The increased use of DC-consuming electronics in many applications relevant to everyday life, necessitates significant improvements to power conversion and distribution methodologies. The surge in mobile electronics created a new power application space where high efficiency, size, and reduced complexity are critical, and at the same time, many computational tasks are relegated to centralized cloud computing centers, which consume significant amounts of energy. In both those application spaces, conversion and distribution efficiency improvements of even a few-% proves to be more and more chall

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45

Bhat, Ritesh Ashok. "Efficient, High power Precision RF and mmWave Digital Transmitter Architectures." Thesis, 2018. https://doi.org/10.7916/D8Z620XN.

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Digital transmitters offer several advantages over conventional analog transmitters such as reconfigurability, elimination of scaling-unfriendly, power hungry and bulky analog blocks and portability across technology. The rapid advancement of technology in CMOS processes also enables integration of complex digital signal processing circuitry on the same die as the digital transmitter to compensate for their non-idealities. The use of this digital assistance can, for instance, enable the use of highly efficient but nonlinear switching-class power amplifiers by compensating for their severe nonl

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46

Colon, Berrios Aida Raquel. "Monolithic Integration Piezoelectric Resonators on CMOS for Radio-Frequency and Sensing Applications." Thesis, 2018. https://doi.org/10.7916/D8W96T0D.

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Software cognitive radios and Internet of Things (IoT) are recent interest areas that need low loss and low power consumption hardware. More specifically, the area of software cognitive radios requires that hardware be frequency agile and highly selective. Meanwhile, IoT relies on multiple low power sensor networks. By combining Complementary Metal Oxide Semiconductors (CMOS) technology with piezoelectric Micro-Electro-Mechanical Systems (MEMS), we can fabricate Systems-on-Chip (SoC) that can be used as filters or references (oscillators) and highly selective sensors. In this work we

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47

Ajayan, K. R. "Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology." Thesis, 2014. http://etd.iisc.ernet.in/2005/3516.

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Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental physical limits as well as process control limitations. As the size of the devices is scales down to improve performance, the circuit becomes more sensitive to the process variations. Thus, it is necessary to have a device model that can predict the variations of device characteristics. Statistical modeling method is a potential solution for this problem. The novelty of the work is that we connect BSIM parameters directly to the underlying process parameters. This is very useful for fabs to optimiz

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48

Field, Ryan Michael. "High-Speed Wide-Field Time-Correlated Single-Photon Counting Fluorescence Lifetime Imaging Microscopy." Thesis, 2014. https://doi.org/10.7916/D8V40S7T.

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Fluorescence microscopy is a powerful imaging technique used in the biological sciences to identify labeled components of a sample with specificity. This is usually accomplished through labeling with fluorescent dyes, isolating these dyes by their spectral signatures with optical filters, and recording the intensity of the fluorescent response. Although these techniques are widely used, fluorescence intensity images can be negatively affected by a variety of factors that impact the fluorescence intensity. Fluorescence lifetime imaging microscopy (FLIM) is an imaging technique that is relativel

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49

Vigraham, Baradwaj. "Power-efficient Circuit Architectures for Receivers Leveraging Nanoscale CMOS." Thesis, 2014. https://doi.org/10.7916/D8GX48PG.

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Cellular and mobile communication markets, together with CMOS technology scaling, have made complex systems-on-chip integrated circuits (ICs) ubiquitous. Moving towards the internet of things that aims to extend this further requires ultra-low power and efficient radio communication that continues to take advantage of nanoscale CMOS processes. At the heart of this lie orthogonal challenges in both system and circuit architectures of current day technology. By enabling transceivers at center frequencies ranging in several tens of GHz, modern CMOS processes support bandwidths of up to several

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Roseman, Jared. "Hybrid Biological-Solid-State Sytems: Powering an Integrated Circuit from ATP." Thesis, 2016. https://doi.org/10.7916/D8C53KNV.

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This thesis presents a novel hybrid biological solid-state system which makes use of biological components in an in-vitro environment to produce functionality incapable by CMOS circuits alone. A "biocell" comprised of lipids and ion pumps is mated to a CMOS IC in a compact configuration and the IC is powered solely from adenosine triphosphate (ATP), often referred to as the 'life energy currency.' The biocell is a fuel cell that produces a membrane potential in the presence of ATP which is used by the IC as an electrical power supply. The design represents the first of a new class of devices c

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