Bibliografías temáticas / Etcw.r

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Literatura académica sobre el tema "Etcw.r"

Autor: Grafiati
Publicado: 26 de julio de 2024
Última modificación: 31 de julio de 2025

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Artículos de revistas sobre el tema "Etcw.r"

1

Sheng, Lin. "The Simulation Application for the Structure Design of the Etcher Nozzle." Applied Mechanics and Materials 249-250 (December 2012): 372–77. http://dx.doi.org/10.4028/www.scientific.net/amm.249-250.372.

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With the higher and higher etching rate, the flow field situation of the plasma etching chamber became an important factor to design the etcher chamber structure. This paper studied the etcher nozzle structure in detail by using the flow simulation technology to analyze how to get uniform follow field on the surface of the etching wafer, and then this paper determined the structure parameters of the etcher nozzle.
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Xu, Xia, Juan Feng, and Ling Tian. "Modeling and Optimization of Process Parameters of a DF-CCP Etcher Chamber." Key Engineering Materials 572 (September 2013): 213–16. http://dx.doi.org/10.4028/www.scientific.net/kem.572.213.

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Dual-frequency capacitively coupled plasma (DF-CCP) etcher has become the mainstream in dielectric etcher. By building a 2D axisymmetric model of 300mm DF-CCP etcher in CFD-ACE+ software, plasma simulation experiments are carried out by orthogonal design. Then a process model based on simulation results is proposed to analysis influence of key process parameters including high frequency voltage, low frequency voltage, and chamber pressure and center/edge flow ratio on chamber plasma characteristics. Finally, to get high plasma uniformity and plasma density, process optimizations are carried ou
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Duan, Wen Rui, and Ling Tian. "Surrogate Modeling and Optimizing for CCP Etch Process." Applied Mechanics and Materials 670-671 (October 2014): 548–53. http://dx.doi.org/10.4028/www.scientific.net/amm.670-671.548.

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In order to analyze performance of the Capacitively Coupled Plasma (CCP) etcher, commercial software like OPTIMUS can be applied to approximate etch process model by Response Surface Method (RSM) or Radial Basis Functions (RBF). Multi-factor parameters are concerned in etch process, like frequencies of the dual Radio Frequency system (RF) and flow rate and flow ratio of the process gas. When facing the multi-dimensional problem, the algorithms would turned to be inefficiency and the optimization process may be trapped in local minimum area or cannot converge because of oscillation. To improve
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4

Lee, Jongwon, Kilsun Roh, Sung-Kyu Lim, and Youngsu Kim. "Sidewall Slope Control of InP Via Holes for 3D Integration." Micromachines 12, no. 1 (2021): 89. http://dx.doi.org/10.3390/mi12010089.

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This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of th
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Valenzuela, Terence D., Daniel W. Spaite, Lani L. Clark, Harvey W. Meislin, and Raymond O. Sayre. "Estimated Cost-Effectiveness of Dispatcher CPR Instruction via Telephone to Bystanders During Out-of-Hospital Ventricular Fibrillation." Prehospital and Disaster Medicine 7, no. 3 (1992): 229–33. http://dx.doi.org/10.1017/s1049023x00039558.

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AbstractHypothesis:Emergency cardiopulmonary resuscitation (CPR) instruction via telephone (ETCPR) is cost-effective compared to prehospital, emergency medical technician (EMT)/paramedic treatment alone of witnessed, ventricular fibrillation (VF) in adult patients.Methods:A total of 118 patients, age >18 years, with prehospital, witnessed ventricular fibrillation were studied. Patient data were extracted from hospital records, monitor-defibrillator recordings, paramedic reports, dispatching records, and telephone interviews with bystanders. No ETCPR was available during this period. The cos
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Shin, H., K. Noguchi, X. Y. Qian, N. Jha, G. Hills, and C. Hu. "Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher." IEEE Electron Device Letters 14, no. 2 (1993): 88–90. http://dx.doi.org/10.1109/55.215117.

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Chen, Wei Kun, Wei Yu Chen, and Li Hui Jin. "Improvement of Edge Etcher System." Advanced Materials Research 1008-1009 (August 2014): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/amr.1008-1009.1144.

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The edge etcher machine is fully automated with very dangerous chemical circumstance; the shortcoming is low capacity for production, it spends too much time on the centering process, we use vision system to reduce the time of centering process and increase the capacity of production.
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 . "Micro-etcher met nieuwe technologie." TandartsPraktijk 27, no. 2 (2006): 167. http://dx.doi.org/10.1007/bf03072772.

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Yunogami, Takashi, Ken’etsu Yokogawa, and Tatsumi Mizutani. "Development of neutral‐beam‐assisted etcher." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 (1995): 952–58. http://dx.doi.org/10.1116/1.579657.

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Gawkrodger, David J., and Fiona M. Lewis. "Isolated cobalt sensitivity in an etcher." Contact Dermatitis 29, no. 1 (1993): 46. http://dx.doi.org/10.1111/j.1600-0536.1993.tb04542.x.

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Tesis sobre el tema "Etcw.r"

1

Dickenson, Andrew C. "Measurement and simulation of ion energy distributions in a reactive ion etcher." Thesis, University of Bristol, 1994. http://hdl.handle.net/1983/2e692fca-5cd1-48da-bb7e-6bb76a1bb23b.

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Gower, Aaron E. (Aaron Elwood). "An architecture for flexible distributed experimentation and control with an AME 5000 plasma etcher." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10647.

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Schmid, Elizabeth Carroll. "Mary Nimmo Moran, Mary Cassatt and the painter-etcher movement: gender, identity and paths to professionalism." Thesis, University of Iowa, 2014. https://ir.uiowa.edu/etd/1394.

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Ropero, Pérez Germán. "Design of a Polygeneration system in Filipinas ETCR, Colombia." Thesis, KTH, Skolan för industriell teknik och management (ITM), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-300082.

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This project has addressed the design of a cost-effective Polygeneration system that guarantees a continuous, equitable and environmentally friendly energy supply for the rural settlement of Filipinas ETCR, (in Spanish, Espacios Territoriales de Capacitación y Reincorporación) Colombia, which is currently not achieved, due to a system that relies on the national electricity grid (with numerous outages) and on LPG (Liquefied Petroleum Gas) and wood to meet the thermal demand, mainly for cooking. For this purpose, in addition to the current energy supply situation, the energy demand according to
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Teale, Carson(Carson Arthur). "In-situ depth monitoring for a deep reactive ion etcher using a white light interferometer with active vibration cancellation." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/121726.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 119-121).<br>Standard process development for micro and nanofabrication etching technologies relies on open-loop trial and error testing of recipes to achieve optimal etch depths and uniformities. This strategy is inefficient for research and fabrication of novel devices where one-of-a-kind experiments cannot justify lengthy process development times. This thesis describes the development of
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鈴木, 彰一. "ITSを用いた大型貨物車交通マネジメントに関する研究". 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215190.

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Ruiz, Crespo Nestor. "Polygeneration system model in rural areas of Colombia : Filipinas ETCR as a case of study." Thesis, KTH, Skolan för industriell teknik och management (ITM), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-300081.

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This project has addressed the design of a cost-effective Polygeneration system that guarantees a continuous, equitable and environmentally friendly energy supply for the rural settlement of Filipinas ETCR, (in Spanish, Espacios Territoriales de Capacitación y Reincorporación) Colombia, which is currently not achieved, due to a system that relies on the national electricity grid (with numerous outages) and on LPG (Liquefied Petroleum Gas) and wood to meet the thermal demand, mainly for cooking. For this purpose, in addition to the current energy supply situation, the energy demand according to
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8

平井, 章一. "都市間高速道路における休憩行動分析と休憩行動モデルのネットワークシミュレーションへの実装に関する研究". Kyoto University, 2018. http://hdl.handle.net/2433/232009.

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Yang, SHIH-FENG, and 楊世豐. "TFT LCD Dry etcher process chemical type Side etch study." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/19184604902928332763.

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碩士<br>國立交通大學<br>平面顯示技術碩士學位學程<br>102<br>During TFT-LCD array process, etching plays a crucial role of creating designed circuits and patterns. By applying chemical or physical process etching can remove certain parts of the deposit film which are not protected by the photo resist. Therefore it can transfer specific patterns from the photo mask to the deposit film (usually thousands of Å) on the glass. The transferred circuit and patterns are important components in the TFT-LCD manufacturing process. Currently there are two types of etching techniques in TFT LCD etching process, Wet and Dry Etch
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Lei, Shuen-Chen, and 雷舜誠. "Study of Plasma Etching on 300mm Inductively Coupled Plasma Etcher." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/04405263728158955844.

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碩士<br>國立清華大學<br>工程與系統科學系<br>89<br>In this thesis ,we use Central Composite Design and Orthogonal Array to arrange the experiments.The parameters of etching rate include ICP power、Bias power、flow rate and pressure. Besides,we use spectrometer and RF impedance meter to measure plasma intensity and RF voltage.Before etching process,we have a standard warm-up process to confirm the ICP etcher is correct and stable.We found etch rate increases when ICP power and Bias power increase. When Flow rate increase,etch rate increases slightly.Intensity of Cl atom spectrum and RF voltage increase,etch rate
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Libros sobre el tema "Etcw.r"

1

V, Pomeranskai͡a T., ed. Rozanov@etc.ru. T͡Sentralʹnyĭ izdatelʹskiĭ dom, 2011.

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Rijn, Rembrandt Harmenszoon van. Rembrandt: Experimental etcher. Hacker Art Books, 1988.

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Dameron, Chip. Waiting for an etcher. Lamar University Press, 2015.

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1950-, Ash Nancy, ed. Rembrandt as an etcher. Sound & Vision, 2006.

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Petukhova, LaVine Tatyana, Weislogel Andrew, Hooghe Romeyn de 1645-1708, and Herbert F. Johnson Museum of Art., eds. Romeyn de Hooghe: Virtuoso etcher. Herbert F. Johnson Museum of Art, Cornell University, 2009.

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Harris, Gėnė E. Joseph Pennell, illustrator, lithographer, etcher. Brandywine Conservancy, 1986.

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Dallett, Joseph B. Romeyn de Hooghe: Virtuoso etcher. Herbert F. Johnson Museum of Art, Cornell University, 2009.

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Campbell, Richard J. George Earl Resler: Minnesota etcher. Minneapolis Institute of Arts, 1996.

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Dallett, Joseph B. Romeyn de Hooghe: Virtuoso etcher. Herbert F. Johnson Museum of Art, Cornell University, 2009.

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S, Ackley Clifford, ed. Rembrandt's journey: Painter, draftsman, etcher. MFA Publications, 2003.

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Capítulos de libros sobre el tema "Etcw.r"

1

Gregg, John, and Peter G. Borden. "In-Situ Particle Monitoring in a Plasma Etcher." In Particles in Gases and Liquids 2. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-3544-1_20.

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"etcher, n." In Oxford English Dictionary, 3rd ed. Oxford University Press, 2023. http://dx.doi.org/10.1093/oed/6970704631.

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"The etcher." In Modernising Protestantism. Amsterdam University Press, 2025. https://doi.org/10.1515/9789048567256-022.

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"photo-etcher, n." In Oxford English Dictionary, 3rd ed. Oxford University Press, 2023. http://dx.doi.org/10.1093/oed/1092471243.

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"Chronology." In Rembrandt’s Journey: Painter · Draftsman · Etcher. "Museum of Fine Arts, Boston", 2003. http://dx.doi.org/10.37862/aaeportal.00241.008.

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"Looking Over Rembrandt’s Shoulder: The Printmaker at Work." In Rembrandt’s Journey: Painter · Draftsman · Etcher. "Museum of Fine Arts, Boston", 2003. http://dx.doi.org/10.37862/aaeportal.00241.004.

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"Materials and Techniques." In Rembrandt’s Journey: Painter · Draftsman · Etcher. "Museum of Fine Arts, Boston", 2003. http://dx.doi.org/10.37862/aaeportal.00241.009.

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"Introduction: Rembrandt’s Artistic Journey." In Rembrandt’s Journey: Painter · Draftsman · Etcher. "Museum of Fine Arts, Boston", 2003. http://dx.doi.org/10.37862/aaeportal.00241.001.

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"Catalogue." In Rembrandt’s Journey: Painter · Draftsman · Etcher. "Museum of Fine Arts, Boston", 2003. http://dx.doi.org/10.37862/aaeportal.00241.006.

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"Exhibition List." In Rembrandt’s Journey: Painter · Draftsman · Etcher. "Museum of Fine Arts, Boston", 2003. http://dx.doi.org/10.37862/aaeportal.00241.007.

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Actas de conferencias sobre el tema "Etcw.r"

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Harrison, Jacob, Nathan Jessurun, Raphael R. Dos Santos, Shajib Ghosh, Navid Asadi, and Mark Tehranipoor. "Analysis of Etcher Configuration on Part Marking Characteristics for Counterfeit Identification." In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2024. http://dx.doi.org/10.1109/ipfa61654.2024.10691006.

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Distelhurst, Kevin, Jim Densmore, and Jiaqi Tang. "Removal of Highly Doped Silicon for Backside Fault Isolation with Fluorine-Based Etches." In ISTFA 2024. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0509.

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Abstract III-V power electronic devices are a growing industry as electric vehicles (EVs), power-demanding servers, and other high-power electronics become more prominent. The design of these devices can alter a failure analysis lab’s process flow typically used on traditional silicon-based logic devices. One such obstacle is backside fault isolation (FI) through highly doped silicon wafers used in GaN-on-Si technologies. Backside fault isolation is critical for many electrical failure analyses so finding several approaches to enable this technique that fits current FA flows is desirable. Chem
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Zeng, Li, Li-Tian Xu, Tao Zhong, et al. "Investigation of silicon oxide thin film utilizing plasma enhanced atomic layer deposition in ICP etcher." In 2025 Conference of Science and Technology of Integrated Circuits (CSTIC). IEEE, 2025. https://doi.org/10.1109/cstic64481.2025.11017791.

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LEE, Chih-Ming, Hsiu-Pin CHEN, Yu-Chen CHANG, Wan-Kang HSIEH, and Li-Heng KAO. "Fluorocarbon Film Deposition Using Reactive Ion Etcher and Its Application for Physical Analysis of 3D Stacking TSV, Micro Bump and Hybrid Bonding." In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2024. http://dx.doi.org/10.1109/ipfa61654.2024.10691016.

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Jekauc, Igor, Jasen Moffitt, Sushil Shakya, et al. "Metal etcher qualification using angular scatterometry." In Microlithography 2005, edited by Richard M. Silver. SPIE, 2005. http://dx.doi.org/10.1117/12.598828.

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Quick, A. K., and N. Hershkowitz. "Uniformity measurements in a helicon plasma etcher." In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531582.

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Lewington, Richard, Ibrahim M. Ibrahim, Sheeba Panayil, Ajay Kumar, and John Yamartino. "Mask etcher data strategy for 45nm and beyond." In Photomask and Next Generation Lithography Mask Technology XIII, edited by Morihisa Hoga. SPIE, 2006. http://dx.doi.org/10.1117/12.681760.

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Chen, Wei-Su, Peng-Sheng Chen, Hung-Wen Wei, Frederick T. Chen, Ming-Jinn Tsai, and Tzu-Kun Ku. "Transfer optimized dry development process of sub-32nm HSQ/AR3 BLR resist pillar from low-K etcher to metal etcher." In SPIE Advanced Lithography, edited by Ying Zhang. SPIE, 2012. http://dx.doi.org/10.1117/12.915488.

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Cheng, Jia, Yu Zhu, Guanghong Duan, and Yangying Chen. "Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21145.

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Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can
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Nakano, N., T. Makabe, and Z. L. Petrovic. "Narrow gap reactive ion etcher-Its discharge structure and function." In International Conference on Plasma Sciences (ICOPS). IEEE, 1993. http://dx.doi.org/10.1109/plasma.1993.593458.

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Informes sobre el tema "Etcw.r"

1

Jones, W. K. Reaction Ion Etcher for MEMS Fabrication. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada415898.

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Morkoc, Hadis. Request for Mask Aligner and Upgrade for a Reactive Ion Etcher. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada417759.

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Barr, Robert W. Development of Design Parameters and Conceptual Drawing for a Plasma Etcher to Clean and Sterilize Surgical Instruments. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada259791.

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