Bibliografías temáticas / Phase change memory GST

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Literatura académica sobre el tema "Phase change memory GST"

Autor: Grafiati
Publicado: 25 de mayo de 2024
Última modificación: 31 de julio de 2025

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Artículos de revistas sobre el tema "Phase change memory GST"

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S. A.Aziz, M., F. H. M.Fauzi, Z. Mohamad, and R. I. Alip. "The Effect of Channel Length on Phase Transition of Phase Change Memory." International Journal of Engineering & Technology 7, no. 3.11 (2018): 25. http://dx.doi.org/10.14419/ijet.v7i3.11.15923.

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The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with
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Behrens, Mario, Andriy Lotnyk, Hagen Bryja, Jürgen W. Gerlach, and Bernd Rauschenbach. "Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses." Materials 13, no. 9 (2020): 2082. http://dx.doi.org/10.3390/ma13092082.

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Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron mi
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Golovchak, R., Y. G. Choi, S. Kozyukhin, et al. "Oxygen incorporation into GST phase-change memory matrix." Applied Surface Science 332 (March 2015): 533–41. http://dx.doi.org/10.1016/j.apsusc.2015.01.203.

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Stern, Keren, Yair Keller, Christopher M. Neumann, Eric Pop, and Eilam Yalon. "Temperature-dependent thermal resistance of phase change memory." Applied Physics Letters 120, no. 11 (2022): 113501. http://dx.doi.org/10.1063/5.0081016.

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One of the key challenges of phase change memory (PCM) is its high power consumption during the reset operation, when the phase change material (typically Ge2Sb2Te5, i.e., GST) heats up to ∼900 K or more in order to melt. Here, we study the temperature-dependent behavior of PCM devices by probing the reset power at ambient temperatures from 80 to 400 K. We find that different device structures exhibit contrasting temperature-dependent behavior. The reset power in our confined-type PCM is nearly unchanged with ambient temperature, corresponding to a temperature-dependent thermal resistance, whe
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Kim, Sung Soon, Jun Hyun Bae, Woo Hyuck Do, et al. "Thermal Stress Model for Phase Change Random Access Memory." Solid State Phenomena 124-126 (June 2007): 37–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.37.

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Thermal stress model considering the effect of phase transformation is proposed for Phase-Change Random Access Memory (PRAM). The results of simulation show that the high level of stress is generated on the junction where Ge2Sb2Te5(GST), TiN and SiO2 meet together. The high level of stress can also be observed in the interface between TiN and SiO2. From simulation results, it can be predictable that delamination between GST and TiN can occur during operation of PRAM. It is expected that the simulation model, which has been developed in this research, is very useful tool for PRAM device design.
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Raeis-Hosseini, Niloufar, and Junsuk Rho. "Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics." Applied Sciences 9, no. 3 (2019): 564. http://dx.doi.org/10.3390/app9030564.

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Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal. We demonstrate a method to exploit the advantages of a phase-change material (PCM) as a metamaterial light absorber and a nanoscale data storage device. We designed and simulated a metamaterial perfect absorber (MPA) that can be reconfigured by adjusting the visible light properties of a chalcogenide-based PCM. The suggested perfect absorber is ba
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Agarwal, Satish C. "Role of potential fluctuations in phase-change GST memory devices." physica status solidi (b) 249, no. 10 (2012): 1956–61. http://dx.doi.org/10.1002/pssb.201200362.

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Pacco, Antoine, Ju-Geng Lai, Pallavi Puttarame Gowda, et al. "Wet Chemical Recess Etching of Ge2Sb2Te5 for 3D PCRAM Memory Applications." ECS Meeting Abstracts MA2022-01, no. 28 (2022): 1262. http://dx.doi.org/10.1149/ma2022-01281262mtgabs.

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Memory cells comprising a Phase Change Material (PCM) are the building blocks of fast and non-volatile memory devices called Phase Change Random Access Memory (PCRAM) [1-3]. The working principle of this memory involves data retention in the form of a phase (amorphous or crystalline) and the set and reset can be done by Joule heating to induce an amorphous-to-crystalline or crystalline-to-amorphous transition respectively. Some chalcogenide materials experience this thermally driven phase change, GeSbTe (GST) being one of those alloys extensively studied. GST has also been adopted for the fabr
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Yin, You, and Sumio Hosaka. "Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory." Key Engineering Materials 497 (December 2011): 101–5. http://dx.doi.org/10.4028/www.scientific.net/kem.497.101.

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In this work, we investigate the effect of the N-doping on microstructure and electrical properties of chalcogenide Ge2Sb2Te5(GST) films for application to multilevel-storage phase change memory (PCM). Crystal size can be markedly reduced from 16 nm to 5 nm by N-doping into GST. The crystal growth suppression is believed to be controlled by distributed fine nitride particles. The resistivity of N-GST as a function of annealing temperature exhibits a gradual change due to the crystal growth suppression. The characteristics imply that N-GST is suitable for application to multilevel-storage PCM a
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Xue, Yuan, Sannian Song, Xiaogang Chen, et al. "Enhanced performance of phase change memory by grain size reduction." Journal of Materials Chemistry C 10, no. 9 (2022): 3585–92. http://dx.doi.org/10.1039/d1tc06045g.

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Tesis sobre el tema "Phase change memory GST"

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Giovanardi, Fabio <1984&gt. "Analysis of charge-transport properties in GST materials for next generation phase-change memory devices." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5583/4/giovanardi_fabio_tesi.pdf.

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The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and
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Giovanardi, Fabio <1984&gt. "Analysis of charge-transport properties in GST materials for next generation phase-change memory devices." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5583/.

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The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and
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3

Hernandez, Gerardo Rodriguez. "Study of mixed mode electro-optical operations of Ge2Sb2Te5." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:5bb8c1f5-2f4b-4eb0-a61a-3978af04211f.

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Chalcogenide based Phase Change Materials are currently of great technological interest in the growing field of optoelectronics. Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) is the most widely studied phase change material, and it has been commercially used in both optical and electronic data storage applications, due to its ability to switch between two different atomic configurations, at high speed and with low power consumption, as well as its high optical and electrical contrast between amorphous and crystalline states. Despite its well-known optical and electrical properties, the oper
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4

Kiouseloglou, Athanasios. "Caractérisation et conception d' architectures basées sur des mémoires à changement de phase." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT128/document.

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Les mémoires à base de semi-conducteur sont indispensables pour les dispositifs électroniques actuels. La demande croissante pour des dispositifs mémoires fortement miniaturisées a entraîné le développement de mémoires non volatiles fiables qui sont utilisées dans des systèmes informatiques pour le stockage de données et qui sont capables d'atteindre des débits de données élevés, avec des niveaux de dissipation d'énergie équivalents voire moindres que ceux des technologies mémoires actuelles.Parmi les technologies de mémoires non-volatiles émergentes, les mémoires à changement de phase (PCM) s
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Sevison, Gary Alan. "Silicon Compatible Short-Wave Infrared Photonic Devices." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1523553057993197.

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Daoudi, Oumaima. "Les matériaux chalcogénures pour les futures générations des mémoires à changement de phase." Electronic Thesis or Diss., Université Grenoble Alpes, 2025. http://www.theses.fr/2025GRALY013.

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La mémoire à changement de phase (PCM) est une technologie non volatile mature quia démontré sa pertinence en termes de rapidité de programmation, de faible consommation d’énergie et de haute endurance. Le système ternaire GST (GST-225) est largement utilisé dans la PCM en raison de ses capacités de transition rapide et du contraste de résistivité important entre les états amorphe et cristallin. Toutefois, sa faible température de cristallisation ne répond pas aux exigences des applications embarquées. Les avancées en ingénierie des matériaux, en particulier l’enrichissement en Ge et de dopage
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Aboujaoude, Andrea E. "Nanopatterned Phase-Change Materials for High-Speed, Continuous Phase Modulation." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1538243834791942.

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Seong, Nak Hee. "A reliable, secure phase-change memory as a main memory." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50123.

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The main objective of this research is to provide an efficient and reliable method for using multi-level cell (MLC) phase-change memory (PCM) as a main memory. As DRAM scaling approaches the physical limit, alternative memory technologies are being explored for future computing systems. Among them, PCM is the most mature with announced commercial products for NOR flash replacement. Its fast access latency and scalability have led researchers to investigate PCM as a feasible candidate for DRAM replacement. Moreover, the multi-level potential of PCM cells can enhance the scalability by increasin
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Huang, Bolong. "Theoretical study on phase change memory materials." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609986.

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Almoric, Jean. "Développement d'un nouvel instrument couplant FIB/SEM UHV et OTOF-SIMS à haute résolution spatiale pour la microélectronique et ses applications." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0368.

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La spectrométrie de masse d’ion secondaire (SIMS) est probablement la technique d'analyse chimique la plus largement utilisée en science des semi-conducteurs et en métallurgie en raison de sa sensibilité ultime à tous les éléments notamment au plus légers. Avec la réduction de la taille des systèmes, l'imagerie chimique 3D haute résolution devient une condition préalable au développement de nouveaux matériaux. Dans cette thèse, nous rapportons le développement et l’optimisation d'un SIMS innovant implémenté dans un microscope électronique à balayage. L'équipement permet d’obtenir une cartograp
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Libros sobre el tema "Phase change memory GST"

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Redaelli, Andrea, ed. Phase Change Memory. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69053-7.

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1976-, Chen Yiran, ed. Nonvolatile memory design: Magnetic, resistive, and phase change. Taylor & Francis, 2012.

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Lan, Rui. Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2217-8.

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Durable Phase-Change Memory Architectures. Elsevier, 2020. http://dx.doi.org/10.1016/s0065-2458(20)x0004-0.

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Asadinia, Marjan, and Hamid Sarbazi-Azad. Durable Phase-Change Memory Architectures. Elsevier Science & Technology, 2020.

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Asadinia, Marjan, and Hamid Sarbazi-Azad. Durable Phase-Change Memory Architectures. Elsevier Science & Technology Books, 2020.

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Muralimanohar, Naveen, Moinuddin K. Qureshi, Sudhanva Gurumurthi, and Bipin Rajendran. Phase Change Memory: From Devices to Systems. Springer International Publishing AG, 2011.

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Qureshi, Moinuddin K., Sudhanva Gurumurthi, and Bipin Rajendran. Phase Change Memory: From Devices to Systems. Morgan & Claypool Publishers, 2011.

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Qureshi, Moinuddin K., Sudhanva Gurumurthi, and Bipin Rajendran. Phase Change Memory: From Devices to Systems. Morgan & Claypool Publishers, 2011.

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Redaelli, Andrea. Phase Change Memory: Device Physics, Reliability and Applications. Springer, 2018.

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Capítulos de libros sobre el tema "Phase change memory GST"

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Jeyasingh, Rakesh, Ethan C. Ahn, S. Burc Eryilmaz, Scott Fong, and H. S. Philip Wong. "Phase Change Memory." In Emerging Nanoelectronic Devices. John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118958254.ch05.

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Pirovano, Agostino. "An Introduction on Phase-Change Memories." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_1.

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Villa, Corrado. "PCM Array Architecture and Management." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_10.

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Atwood, Gregory. "PCM Applications and an Outlook to the Future." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_11.

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Ielmini, Daniele. "Electrical Transport in Crystalline and Amorphous Chalcogenide." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_2.

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Boniardi, Mattia. "Thermal Model and Remarkable Temperature Effects on the Chalcogenide Alloy." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_3.

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Redaelli, Andrea. "Self-Consistent Numerical Model." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_4.

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Gleixner, Robert. "PCM Main Reliability Features." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_5.

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Noé, Pierre, and Françoise Hippert. "Structure and Properties of Chalcogenide Materials for PCM." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_6.

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Sousa, Véronique, and Gabriele Navarro. "Material Engineering for PCM Device Optimization." In Phase Change Memory. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69053-7_7.

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Actas de conferencias sobre el tema "Phase change memory GST"

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Adya, Uthkarsh, Daniel Sturm, Rui Chen, Arka Majumdar, Mo Li, and Sajjad Moazeni. "BEOL Post-processing of Phase Change Material in Commercial Foundry Silicon Photonics." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jth2a.99.

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We demonstrate the first-ever electrically programmable PCM device that is monolithically integrated in a commercial foundry silicon photonics. Initial results show 0.3 dB/µm of amplitude switching contrast using a thin layer of GST.
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Li, Ning. "Optimization of electrical phase change memory for in-memory computing." In Photonic Computing: From Materials and Devices to Systems and Applications, edited by Xingjie Ni and Wenshan Cai. SPIE, 2024. http://dx.doi.org/10.1117/12.3029904.

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Jackson, D. C. S., M. Nardone, V. Karpov, and I. Karpov. "Relaxation Oscillation in GST-Based Phase Change Memory Devices." In 2009 IEEE International Memory Workshop (IMW). IEEE, 2009. http://dx.doi.org/10.1109/imw.2009.5090605.

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Baldo, M., L. Laurin, E. Petroni, et al. "Modeling Environment for Ge-rich GST Phase Change Memory Cells." In 2022 IEEE International Memory Workshop (IMW). IEEE, 2022. http://dx.doi.org/10.1109/imw52921.2022.9779290.

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Li, Zijian, Jaeho Lee, John P. Reifenberg, Mehdi Asheghi, H. S. Philip Wong, and Kenneth E. Goodson. "In-Plane Thermal Conduction and Conductivity Anisotropy in Ge2Sb2Te5 Films for Phase Change Memory." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-40459.

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Thermal conduction governs the program/erase speed and power consumption of phase change memory (PCM) devices. This work presents the in-plane thermal conductivity measurement of Ge2Sb2Te5 (GST) films suspended in a microfabricated structure for the amorphous (a-GST), face-centered cubic (f-GST) and hexagonal close packed (h-GST) phases. The unique design of free-standing GST films eliminates the out-of-plane heat loss to the substrate and achieves high sensitivity to lateral heat conduction. The measured in-plane thermal conductivities of GST thin films are 0.18 ± 0.02 Wm−1K−1 for a-GST, 0.49
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Zheng, J. F., P. Chen, W. Hunks, et al. "MOCVD GST for high speed and low current Phase Change Memory." In 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS). IEEE, 2011. http://dx.doi.org/10.1109/nvmts.2011.6137102.

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Lee, Jaeho, Takashi Kodama, Yoonjin Won, Mehdi Asheghi, and Kenneth E. Goodson. "Thermoelectric Characterization of Ge2Sb2Te5 Films for Phase-Change Memory." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75092.

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While thermoelectric effects can strongly influence the performance of phase-change memory (PCM), the thermoelectric properties of phase-change materials for thin film structure have received little attention. This work reports the temperature and phase dependent Seebeck coefficient of 25 nm and 125 nm thick Ge2Sb2Te5 (GST) films. The Seebeck coefficient of crystalline GST films varies strongly with film thickness, due to changes in crystallization effect and grain boundary scattering. Electrothermal simulations demonstrate that the measured thermoelectric properties can strongly influence the
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Lee, Jaeho, John P. Reifenberg, Mehdi Asheghi, and Kenneth E. Goodson. "High Temperature Thermal Characterization of Ge2Sb2Te5 for Phase Change Memory." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44230.

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We propose a novel design of Joule heating thermometry to measure thermal properties of Ge2Sb2Te5 (GST) films at temperatures relevant for the switching of phase change memory devices. Vertically stacked micro-fabricated heaters control temperature and measure thermal conductivity of thin films using the 3ω method. The thermal time constant of the experimental structure enables studies of short time scale crystallization and cycling effects for phase change materials. This work reports the thermal conductivity of GST films from the room temperature to above 400 Celsius in amorphous, face-cente
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Yang, Yizhang, Taehee Jeong, Hendrik F. Hamann, Jimmy Zhu, and Mehdi Asheghi. "Thermal Conductivity Measurements and Modeling of Phase-Change GST Materials." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32830.

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Phase-change technology has been widely used in rewritable disks for optical recording applications. Recently, it has also received attention as a candidate for future high storage density non-volatile random access memory, due to its much longer cycle life (∼1013) and fast data access time (∼100ns) compared with the existing Flash memory technology. In this paper, we present thermal conductivity data and models for phase-change GeSbTe material that would be helpful in performance optimization and improvement in the reliability (i.e., enhancement of data rate, cyclability, control of mark-edge
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Song, Yibin, Ruixuan Huang, Yiying Zhang, and Haiyang Zhang. "A study of GST etching process for phase change memory application." In 2016 China Semiconductor Technology International Conference (CSTIC). IEEE, 2016. http://dx.doi.org/10.1109/cstic.2016.7464012.

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