Bibliografías temáticas / XPS/ARPES

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Literatura académica sobre el tema "XPS/ARPES"

Autor: Grafiati

Publicado: 9 de noviembre de 2024

Última modificación: 31 de julio de 2025

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Artículos de revistas sobre el tema "XPS/ARPES"

Ostler, Markus, Roland J. Koch, Florian Speck, et al. "Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation." Materials Science Forum 717-720 (May 2012): 649–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.649.

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Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC interface is a well studied topic since successful intercalation has been shown for hydrogen [1-3]. Recently, intercalation was also shown for oxygen [4, 5]. We present ARPES, XPS and Raman spectroscopy studies to determine the quality of oxygen intercalated buffer layer samples in terms of decoupling and integrity of the transformed graphene layer. The decou

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Chaluvadi, Sandeep, Debashis Mondal, Chiara Bigi, et al. "Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser." Coatings 11, no. 3 (2021): 276. http://dx.doi.org/10.3390/coatings11030276.

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Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunnelling microscopy (STM), synchrotron radiation X-ray photoelectron spectros

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Ozawa, Kenichi, Yoshihiro Aiura, Daisuke Wakabayashi, et al. "Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory." Journal of Synchrotron Radiation 29, no. 2 (2022): 400–408. http://dx.doi.org/10.1107/s160057752200090x.

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Beamline 13 of the Photon Factory has been in operation since 2010 as a vacuum ultraviolet and soft X-ray undulator beamline for X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and angle-resolved photoelectron spectroscopy (ARPES) experiments. The beamline and the end-station at branch B have been recently upgraded, enabling microscopic XPS, XAS, and ARPES measurements to be performed. In 2015, a planar undulator insertion device was replaced with an APPLE-II (advanced planar polarized light emitter II) undulator. This replacement allows use of linear, circular, an

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Johansson, Leif I., Somsakul Watcharinyanon, Alexei A. Zakharov, Rositza Yakimova, and Chariya Virojanadara. "The Registry of Graphene Layers Grown on SiC(000-1)." Materials Science Forum 717-720 (May 2012): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.613.

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Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp 1x1 patterns in m-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few mm was obtained on some samples.

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Maier, F., R. Graupner, M. Hollering, L. Hammer, J. Ristein, and L. Ley. "The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study." Surface Science 443, no. 3 (1999): 177–85. http://dx.doi.org/10.1016/s0039-6028(99)01010-9.

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Hollering, M., J. Bernhardt, J. Schardt, et al. "Electronic and atomic structure of the6H−SiC(0001¯)surface studied by ARPES, LEED, and XPS." Physical Review B 58, no. 8 (1998): 4992–5000. http://dx.doi.org/10.1103/physrevb.58.4992.

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Emtsev, Konstantin V., Thomas Seyller, Florian Speck, et al. "Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy." Materials Science Forum 556-557 (September 2007): 525–28. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.525.

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Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temp

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Rybkina, Anna A., Alevtina A. Gogina, Artem V. Tarasov, et al. "Origin of Giant Rashba Effect in Graphene on Pt/SiC." Symmetry 15, no. 11 (2023): 2052. http://dx.doi.org/10.3390/sym15112052.

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Intercalation of noble metals can produce giant Rashba-type spin–orbit splittings in graphene. The spin–orbit splitting of more than 100 meV has yet to be achieved in graphene on metal or semiconductor substrates. Here, we report the p-type graphene obtained by Pt intercalation of zero-layer graphene on SiC substrate. The spin splitting of ∼200 meV was observed at a wide range of binding energies. Comparing the results of theoretical studies of different models with the experimental ones measured by spin-ARPES, XPS and STM methods, we concluded that inducing giant spin–orbit splitting requires

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Hung, Nguyen Van. "Contributions to Developments of Photoelectron Spectroscopy and X-ray Absorption Fine Structure Applied to Materials Studies." Communications in Physics 31, no. 2 (2021): 113. http://dx.doi.org/10.15625/0868-3166/15826.

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This work reviews the contributions of author to the developments and applications of Photoelectron Spectroscopy (PES) and X-ray Absorption Fine Structure (XAFS) to materials studies. Focusing on Angle resolved PES (ARPES) the energy distribution is discussed for angle-resolved photoemission from valence bands of single crystals. The important influence of the spectrometer angle of acceptance on the results of X-ray PES (XPS) is investigated in detail. The Plane Density of States (PDOS) is introduced as a new property of the electronic structure. Most meaningful contributions to XAFS consist o

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Villarreal, Renan. "(Invited, Digital Presentation) Single-Atom Quantum Magnetism in 2D Materials." ECS Meeting Abstracts MA2022-01, no. 12 (2022): 874. http://dx.doi.org/10.1149/ma2022-0112874mtgabs.

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With the advent of 2D materials, the playground to study spins in dilute and non-dilute phases has expanded. This is appealing for utilizing the additional degrees of freedom of electron systems such as spin and valley and, from the fundamental point of view, to better understand atomic scale magnetic phenomena in low dimensional materials. Dilute magnetism in 2D materials can lead to complex magnetic phenomena (e.g., Kondo effect, RKKY-interactions, quantum relaxation and coherence), with potential for applications in spintronics (e.g., spin FETs) and quantum technologies (e.g., single-atom q

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Tesis sobre el tema "XPS/ARPES"

Pierron, Thomas. "Contribution à l’étude des propriétés de l’interface métal oxyde GeO/Ru(0001) par STM, XPS/ARPES et SXRD." Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0160.

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Ce manuscrit de thèse est dédié à l’étude des oxydes de silicium (SiO) et de germanium (GeO) sous forme ultramince. Elaborés par épitaxie par jet moléculaire à la surface d’un cristal de ruthénium (0001), ces systèmes peuvent exister sous deux phases stables. La première est constituée d'une monocouche connectée au substrat par des liaisons covalentes formant une interface métal oxyde. La seconde est quant à elle constituée d’une bicouche en interaction faible déconnectée du substrat. La faiblesse des interactions de Van der Waals permet son exfoliation pour l’intégrer dans des hétérostructure

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Mahmoudi, Aymen. "Propriétés électroniques des dichalcogénures bi-dimensionnels de métaux de transition." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP106.

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Le sujet de cette thèse s'inscrit dans la thématique des matériaux bidimensionnels (2D) d'épaisseur atomique. L'étude des propriétés optiques et électroniques des hétérostructures hybrides à base de dichalcogénures de métaux de transition (TMD) MX₂ (M = Mo, W ; X = S, Se, Te) est aujourd'hui considérée avec attention en raison de futures applications et d'études plus fondamentales. Plus que leurs propriétés physiques intrinsèques, en configuration multicouche, ces matériaux offrent des phénomènes physiques prometteurs tels que la modulation de la valeur de la bande interdite, la ferroélectrici

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Mammadov, Samir, Jürgen Ristein, Roland J. Koch, et al. "Polarization doping of graphene on silicon carbide." Technische Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A21188.

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The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy (ARPES) close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by i) the spontaneous polarization of the substrate, and ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC [Phys. Rev. Lett. 108, 246104 (20

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Bocquet, Francois. "Du fullerène au graphène : études spectroscopiques de l'interaction de systèmes pi-conjugués avec des surfaces solides." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4721/document.

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Nous étudions l'adsorption de molécules de C60 sur deux reconstructions riches en silicium du 6H-SiC(0001) par IPES, UPS et XPS. Nous mettons en évidence que l'adsorption de C60 sur (3*3) est singulière et définit un nouveau type de liaison entre C60 et substrat : liaison covalente forte avec désorption par recuit à haute température et récupération de la reconstruction de surface. Ces expériences illustrent la complexité de la liaison Si-C60 et permettent une nouvelle mise en perspective.En combinant ARPES à basse énergie de photon et DFT sur une monocouche de ZnPc sur Ag(110), nous prouvons

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Daukiya, Lakshya. "Epitaxial Graphene Functionalization : Covalent grafting of molecules, Terbium intercalation and Defect engineering." Thesis, Mulhouse, 2016. http://www.theses.fr/2016MULH9879/document.

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Le premier chapitre de cette thèse présente l’intérêt et la problématique de la fonctionnalisation du graphène. L’état de l’art actuel de cette thématique est présenté. Dans un deuxième chapitre, nous discutons de façon détaillée des techniques expérimentales. Le chapitre 3 est centré sur la modification du graphène par réaction de cycloaddition par molécules dérivées de maleimides. Dans cette étude, nous démontrons le greffage covalent de molécules sur graphène épitaxié sans défaut sur SiC, ainsi qu’une tendance d’ouverture de bande interdite à l’aide de caractérisations par spectroscopie Ram

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Cameau, Mathis. "An experimental approach to the realization and characterization of the two-dimensional Dirac nodal line materials Cu2Si and Cu2Ge. Influence of the substrate and of Pb deposition on the electronic band structure." Electronic Thesis or Diss., Sorbonne université, 2022. http://www.theses.fr/2022SORUS075.

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La réalisation de nouveaux matériaux bidimensionnels est un domaine en plein essor de la matière condensée, à la fois pour les aspects fondamentaux, avec les propriétés exotiques émergeant de la dimensionnalité réduite, et pour les applications technologiques potentielles, avec des promesses telles que des courants sans dissipation et des hétérostructures 2D plus performantes que la technologie actuelle à base de silicium à une fraction de la taille. Dans ce travail, nous avons adopté une approche expérimentale pour la réalisation et la caractérisation de matériaux prédits pour accueillir des

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Hirvonen, Grytzelius Joakim. "Thin Mn silicide and germanide layers studied by photoemission and STM." Doctoral thesis, Karlstads universitet, Avdelningen för fysik och elektroteknik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-14488.

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The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). The magnetic properties of the Mn-Ge films were investigated by X-ray magnetic

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Li, kun-Rong, and 李昆融. "Adsorption and desorption of atomic hydrogen on the surface of thin Ag films on Au(111) studied with ARPES and XPS." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/g9j3ww.

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碩士<br>國立中央大學<br>物理學系<br>102<br>We have studied the adsorption and desorption of atomic hydrogen on the surfaces of Ag thin films. Atomically flat Ag films were grown on Au(111), exposed to a flux of thermally generated hydrogen atoms at a low sample temperature, and annealed for the desoprtion of hydrogen atoms. During annealing, the evolutions of the surfaces of the thin films were characterized on monitoring their surface states with angle-resolved photoemission spectroscopy. Our experimental results showed that, with the exposure of hydrogen atoms, the surfaces states of thin Ag films deter

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Capítulos de libros sobre el tema "XPS/ARPES"

Berthod, Christophe. "External photoemission (XPS, PES, ARPES)." In Spectroscopic Probes of Quantum Matter. IOP Publishing, 2018. http://dx.doi.org/10.1088/978-0-7503-1741-2ch7.

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