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Articoli di riviste sul tema "Transistors"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 25 luglio 2025

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1

Vukic, Vladimir, and Predrag Osmokrovic. "Power lateral pnp transistor operating with high current density in irradiated voltage regulator." Nuclear Technology and Radiation Protection 28, no. 2 (2013): 146–57. http://dx.doi.org/10.2298/ntrp1302146v.

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The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-curr

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2

Knyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka, and A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89." Journal of Physics: Conference Series 2086, no. 1 (2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.

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Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.

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3

Horng. "Thin Film Transistor." Crystals 9, no. 8 (2019): 415. http://dx.doi.org/10.3390/cryst9080415.

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The special issue is "Thin Film Transistor". There are eight contributed papers. They focus on organic thin film transistors, fluorinated oligothiophenes transistors, surface treated or hydrogen effect on oxide-semiconductor-based thin film transistors, and their corresponding application in flat panel displays and optical detecting. The present special issue on “Thin Film Transistor” can be considered as a status report reviewing the progress that has been made recently on thin film transistor technology. These papers can provide the readers with more research information and corresponding ap

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4

Wang, Yaoli. "Research On Structural Design and Performance Optimization of Diamond Transistors." Transactions on Computer Science and Intelligent Systems Research 7 (November 25, 2024): 1–7. https://doi.org/10.62051/w3wnpd51.

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With the increasing demand for transistors that work in high-power, high-frequency, and high-voltage environments, diamond transistors are set to become an indispensable part of future transistor development. This article reviews the development history of hydrogen-terminated diamond transistors and silicon-terminated diamond transistors. Specifically, this article summarizes the invention of hydrogen-terminated and silicon-terminated diamond transistors, along with recent structural innovations and data analysis. From the recent findings on hydrogen-terminal diamond transistors, this paper fi

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5

Gardashbekova, Nailya Adem, and Sadi Gachay Zeynalov. "METAL-DIELECTRIC-SEMICONDUCTOR TRANSISTORS IN INTEGRAL CIRCUITS." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 98 (February 22, 2025): 67–69. https://doi.org/10.5281/zenodo.14911007.

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Induced n-type channel MDY-transistors are widely used in the development of microcircuits. Induced nand p-type channel transistors are mainly used in complementary MDY-microcircuits. Of the n- and p-type channel transistors with the same structure, the n-type channel transistor has a higher frequency and larger curvature characteristic than the p-type channel transistor, making it superior to the p-type channel transistor. This advantage is explained by the fact that the mobility of electrons in the crystal is greater than that of holes. MDY-transistors differ from bipolar transistors in

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6

BLALOCK, BENJAMIN J., SORIN CRISTOLOVEANU, BRIAN M. DUFRENE, F. ALLIBERT, and MOHAMMAD M. MOJARRADI. "THE MULTIPLE-GATE MOS-JFET TRANSISTOR." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 511–20. http://dx.doi.org/10.1142/s0129156402001423.

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A new SOI device, the MOS-JFET, has been developed that combines two different transistors, JFET and MOSFET, superimposed in a single silicon island so that they share the same body. A unique attribute of the MOS-JFET is that it can be viewed as a four gate transistor (two side junction-based gates, the top MOS gate, and the back gate activated by SOI substrate biasing). Each of these four gates can control the conduction characteristics of the transistor. This novel transistor's multiple gate inputs give rise to exciting circuit opportunities for analog, RF, mixed-signal, and digital applicat

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7

Arunabala, Dr C. "Design of a 4 bit Arithmetic and Logical unit with Low Power and High Speed." International Journal of Innovative Technology and Exploring Engineering 10, no. 5 (2021): 87–92. http://dx.doi.org/10.35940/ijitee.e8660.0310521.

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In this presented work we designed the 4- bit Arithmetic & Logical Unit (ALU) by using the different modules. The Various modules are AND gate & OR gate designed with six transistors, While the XOR modules is designed with both eight transistors & six transistors. The six transistor XOR module gives optimized results. Another one is the four by one multiplexer designed with eight transistors implemented using Pass transistor logic (PTL) style. The full adder module is designed by using 18 transistors implemented through PTL style. Here because of PTL style the number of transistor

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8

Dr.C.Arunabala*, Ch.Jyothirmayi, N. S. V. Sreeja.T D, Burra Hrithika Suma, Udumula Reddy, and I.R.AnushaDevi. "Design of a 4 bit Arithmetic and Logical unit with Low Power and High Speed." International Journal of Innovative Technology and Exploring Engineering (IJITEE) 10, no. 5 (2021): 87–92. https://doi.org/10.35940/ijitee.E8660.0310521.

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Abstract (sommario):

In this presented work we designed the 4- bit Arithmetic & Logical Unit (ALU) by using the different modules. The Various modules are AND gate & OR gate designed with six transistors, While the XOR modules is designed with both eight transistors & six transistors. The six transistor XOR module gives optimized results. Another one is the four by one multiplexer designed with eight transistors implemented using Pass transistor logic (PTL) style. The full adder module is designed by using 18 transistors implemented through PTL style. Here because of PTL style the number of transistor

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9

Fadil, Dalal, Wlodek Strupinski, Emiliano Pallecchi, and Henri Happy. "Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC." Materials 17, no. 14 (2024): 3553. http://dx.doi.org/10.3390/ma17143553.

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Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (fmax) and cut-off frequency (ft) of hundred transistors. The Raman spectra analysis provides insights into material property, which

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10

Yarmukhamedov, A., A. Zhabborov, and B. Turimbetov. "EXPERIMENTAL RESEARCH AND COMPUTER SIMULATION OF MULTI-CASCADE COMPOSITE TRANSISTORS FOR STABILIZING THE OPERATING MODE OF OUTPUT CASCADES OF RADIO ENGINEERING DEVICES." Technical science and innovation 2019, no. 1 (2019): 33–42. http://dx.doi.org/10.51346/tstu-01.18.2.-77-0009.

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Experimental results and computer simulation of multi-stage composite transistors are presented. To study the volt - ampere characteristics of multistage composite transistors, a dialogue computer simulation program, the Delphi programming environment, has been developed. It is shown that the proposed multistage composite transistors can improve manufacturability in its industrial production. It is shown that multistage homostructure transistors according to the Darlington and Shiklai circuits operate stably at collector-emitter voltages five times higher than in the case of individual transis

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11

Tappertzhofen, S., L. Nielen, I. Valov, and R. Waser. "Memristively programmable transistors." Nanotechnology 33, no. 4 (2021): 045203. http://dx.doi.org/10.1088/1361-6528/ac317f.

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Abstract When designing the gate-dielectric of a floating-gate-transistor, one must make a tradeoff between the necessity of providing an ultra-small leakage current behavior for long state retention, and a moderate to high tunneling-rate for fast programming speed. Here we report on a memristively programmable transistor that overcomes this tradeoff. The operation principle is comparable to floating-gate-transistors, but the advantage of the analyzed concept is that ions instead of electrons are used for programming. Since the mass of ions is significantly larger than the effective mass of el

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12

Xie, Fangqing, Maryna N. Kavalenka, Moritz Röger, et al. "Copper atomic-scale transistors." Beilstein Journal of Nanotechnology 8 (March 1, 2017): 530–38. http://dx.doi.org/10.3762/bjnano.8.57.

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We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of th

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13

Hebali, Mourad, Menaouer Bennaoum, Mohammed Berka, et al. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model." Journal of Electrical Engineering 70, no. 2 (2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.

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Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low po

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14

Balti, M., D. Pasquet, and A. Samet. "PROPAGATION EFFECTS ON Z PARAMETERS IN AN FET EQUIVALENT CIRCUIT." SYNCHROINFO JOURNAL 7, no. 5 (2021): 21–25. http://dx.doi.org/10.36724/2664-066x-2021-7-5-21-25.

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The design of microwave circuits needs a good analysis of the performances of the field-effect transistor equivalent circuit. Indeed the small signal equivalent circuit of the field-effect transistors makes it possible to easily determine their performances such as the gain and the noise figure. A field-effect transistor constitutes a propagation structure along its gate width. Telegraphists’ equations are solved for this structure. One deduces from this the effect of the propagation on the transistor Z-parameters which can be taken into account in electric simulations and which may improve th

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15

Choi, Woo Young. "Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage." Micromachines 11, no. 6 (2020): 543. http://dx.doi.org/10.3390/mi11060543.

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This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel

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16

Lin, Jinhan. "Advancement and Challenges of Field Effect Transistors based on Multi-gate Transistor." Journal of Physics: Conference Series 2370, no. 1 (2022): 012004. http://dx.doi.org/10.1088/1742-6596/2370/1/012004.

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The advancement and challenges of field effect transistors are based on multi-gate transistors from the perspective of structure and material. Multi-gate field-effect transistors (Multi-gate FET) have steeper sub-threshold slopes, which can reduce the short channel effect and improve mobility and drive current. A fin field-effect transistor (FinFET) and gate-all-around field-effect transistor (GAAFET) are attractive multi-gate structures most compatible with today’s standard machining technologies. As the future moves towards smaller processes, FinFET and GAAFET processes limit the spacing bet

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17

Liu, Jiaxin, Shan Huang, Zhenyuan Xiao, et al. "Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density." Electronic Materials 6, no. 1 (2025): 2. https://doi.org/10.3390/electronicmat6010002.

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Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistors (SGTs). Device performances are analyzed using technology computer-aided design (TCAD) simulations. The TCAD simulation results reveal that, with an optimized device structure, the current density of the wrapping a-IGZO transistor can reach 7.34 μA/μm, representing an approximate two-fold enhancem

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18

Cunţan, C. D., I. Baciu, and M. Osaci. "Study of MOS and IGBT transistors at switching with variable duty cycle." Journal of Physics: Conference Series 2714, no. 1 (2024): 012010. http://dx.doi.org/10.1088/1742-6596/2714/1/012010.

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Abstract In this paper, the functionality of MOS and IGBT transistors is examined under identical working conditions, both in terms of command frequency and load circuit. A variable duty cycle and variable frequency signal generator is used to control transistors. Various electronic components and Arduino-UNO modules, as well as the 16×2 LCD screen, were used to create the signal generator. The control signal is amplified by a current amplifier to adapt the output voltage to the value required to control the transistors. The operation of MOS and IGBT transistors at various operating frequencie

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19

Maftunzada, S. A. L. "The Structure and Working Principle of a Bipolar Junction Transistor (BJT)." Physical Science International Journal 26, no. 11-12 (2022): 35–39. http://dx.doi.org/10.9734/psij/2022/v26i11-12772.

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We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is p

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20

Kumrey, G. R., and S. K. Mahobia. "STUDY AND PERFORMANCE TESTING OF TRANSISTOR WITH COMMON EMITTER AMPLIFIER CIRCUIT." International Journal of Research -GRANTHAALAYAH 4, no. 8 (2016): 100–103. http://dx.doi.org/10.29121/granthaalayah.v4.i8.2016.2567.

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The transistor has ranking in 20th century technology. It is finding the application in all electronic devices as radios, computers. Integrated circuits are containing various transistors, which are made by silicon. The transistors are used to handle large current and/or large voltages. As example, the final audio stage in the stereo system used a power transistors amplifier to drive the various speakers. Transistors are device, which are utilizes a change in current to produce a large change in voltage, current, or power.

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21

Dallaire, Nicholas J., Samantha Brixi, Martin Claus, Stefan Blawid, and Benoît H. Lessard. "Benchmarking contact quality in N-type organic thin film transistors through an improved virtual-source emission-diffusion model." Applied Physics Reviews 9, no. 1 (2022): 011418. http://dx.doi.org/10.1063/5.0078907.

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Due to nonideal behavior, current organic thin film transistor technologies lack the proper models for essential characterization and thus suffer from a poorly estimated parameter extraction critical for circuit design and integration. Organic thin film transistors are often plagued by contact resistance, which is often less problematic in inorganic transistors; consequently, common models used for describing inorganic devices do not properly work with organic thin film transistors. In this work, we fabricate poly{[ N, N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt

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Bogatyrev, Yu V., D. A. Aharodnikau, S. B. Lastovsky, et al. "Influence of ionizing radiation on the parameters of p-channel MOS transistors." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no. 4 (2023): 402–8. http://dx.doi.org/10.29235/1561-8358-2022-67-4-402-408.

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The results of experimental studies of the influence of gamma radiation Co60 on the basic parameters of silicon epitaxial-planar p-channel MOSFET transistors under different electrical modes are presented. Transistors were manufactured according to radiation-resistant DMOS technology with design standards of 1.4 μm. As a result of transistor studies, it was established that the values of all basic parameters after the radiation dose D = 106 rads (SiO2) in active electrical irradiation modes remained within the limits of the performance criteria; the parameter, most sensitive to influence of a

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23

Liou, Juin J., and Frank Schwierz. "Evolution and recent advances in RF/microwave transistors." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2004): 99–105. http://dx.doi.org/10.26636/jtit.2004.1.224.

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Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transis

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Al-Hadithi, Basil Mohammed, and Miguel Jimenez. "IGBT Overcurrent Capabilities in Resonant Circuits." Sensors 24, no. 23 (2024): 7631. https://doi.org/10.3390/s24237631.

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The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. The field of power electronics and their correct activation ensures that the transistors are operated without being destroyed. In this work, a double resonant transformer was built and used to produce very high currents. These currents are switched by a full bridge of resonant IGBT transistors to demonstrate the feasibility of exceeding the maximum

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Ahmed Mohammede, Arsen, Zaidoon Khalaf Mahmood, and Hüseyin Demirel. "Study of finfet transistor: critical and literature review in finfet transistor in the active filter." 3C TIC: Cuadernos de desarrollo aplicados a las TIC 12, no. 1 (2023): 65–81. http://dx.doi.org/10.17993/3ctic.2023.121.65-81.

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For several decades, the development of metal-oxide-semiconductor field-effect transistors have made available to us better circuit time and efficiency per function with each successive generation of CMOS technology. However, basic product and manufacturing technology limitations will make continuing transistor scaling difficult in the sub-32 nm zone. Field impact transistors with fins were developed. offered as a viable solution to the scalability difficulties. Fin field effect transistors can be made in the same way as regular CMOS transistors, allowing for a quick transition to production.

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Kapen, Tilegen Abaiuly. "INSULATED-GATE BIPOLAR TRANSISTOR." Chronos 7, no. 8(70) (2022): 32–35. http://dx.doi.org/10.52013/2658-7556-70-8-12.

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Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.

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Hashim, Yasir, and Othman Sidek. "Dimensional Effect on DIBL in Silicon Nanowire Transistors." Advanced Materials Research 626 (December 2012): 190–94. http://dx.doi.org/10.4028/www.scientific.net/amr.626.190.

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Drain-induced barrier lowering (DIBL) is crucial in many applications of silicon nanowire transistors. This paper determined the effect of the dimensions of nanowires on DIBL. The MuGFET simulation tool was used to investigate the characteristics of the transistors. The transfer characteristics of transistors with different dimensions were simulated. The results show that longer nanowires with smaller diameters and lower oxide thickness decrease DIBL and tend to possess the best transistor characteristics.

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Sergeev, Vyacheslav A., Alexander M. Hodakov, Ilya V. Frolov, and Alexander A. Kazankov. "Current distribution in comb structures of bipolar and heterobipolar microwave transistors taking into account the metallization tracks resistance." Radioelectronics. Nanosystems. Information Technologies. 16, no. 3 (2024): 317–24. http://dx.doi.org/10.17725/j.rensit.2024.16.317.

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A brief analysis of the causes of inhomogeneous and unstable current distribution between elementary transistors in comb structures (CS) of bipolar (BT) and heterobipolar (HBT) microwave transistors is presented. An expression for the current flowing into a CS elementary transistor, taking into account the emitter track metallization resistance, is derived. An estimation of the influence of technological variation of emitter metallization track resistances on the non-uniformity of the transistor total current distribution between elementary transistors is given. It is shown that resistance of

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Nowbahari, Arian, Avisek Roy, and Luca Marchetti. "Junctionless Transistors: State-of-the-Art." Electronics 9, no. 7 (2020): 1174. http://dx.doi.org/10.3390/electronics9071174.

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Recent advances in semiconductor technology provide us with the resources to explore alternative methods for fabricating transistors with the goal of further reducing their sizes to increase transistor density and enhance performance. Conventional transistors use semiconductor junctions; they are formed by doping atoms on the silicon substrate that makes p-type and n-type regions. Decreasing the size of such transistors means that the junctions will get closer, which becomes very challenging when the size is reduced to the lower end of the nanometer scale due to the requirement of extremely hi

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Mondzik, Andrzej. "T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver." Energies 16, no. 12 (2023): 4642. http://dx.doi.org/10.3390/en16124642.

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This article presents the concept of switching and conduction loss reduction in a T-NPC inverter based on IGBT transistors. The method of limiting switching losses involves the connection of an LC circuit designed to cause transistors in vertical branches to shut down under zero voltage conditions. In order to reduce conduction losses, it was proposed to use two reverse blocking transistors connected anti-parallel in the horizontal branch of the inverter. To ensure safe operation of the transistors, a gate driver proposal for controlling the IGBT reverse blocking transistor is presented. The s

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Park, ChangMin, SeHan Lee, MinSu Choi, et al. "Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4150–53. http://dx.doi.org/10.1166/jnn.2007.015.

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We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our ne

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Park, ChangMin, SeHan Lee, MinSu Choi, et al. "Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4150–53. http://dx.doi.org/10.1166/jnn.2007.18093.

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We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our ne

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Hassinen, Tomi, Ari Alastalo, Kim Eiroma, et al. "All-Printed Transistors on Nano Cellulose Substrate." MRS Advances 1, no. 10 (2015): 645–50. http://dx.doi.org/10.1557/adv.2015.31.

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ABSTRACTWe report fully-printed top-gate-bottom-contact organic thin-film transistors using substrates prepared from cellulose nanofibers and commercially available printing inks to fabricate the devices. Gravure printing was used to coat the substrate with a polymer resist to decrease the surface roughness and close the surface. Transistor structures were fabricated using inkjet printing for conductors and gravure printing for the dielectric and semiconducting layers. The obtained transistor performance is compared to that of similar transistors on plastic substrate.

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Hanko, Branislav, Michal Frivaldsky, and Jan Morgos. "Evaluation of the Efficiency Performance of 3-Phase, 6-Switch PFC Circuit Based on the Used 1.2 kV SiC Transistor." Electronics 11, no. 3 (2022): 363. http://dx.doi.org/10.3390/electronics11030363.

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This paper evaluates the performance of the high-voltage wide-band gap SiC power transistors equipped within 3-phase bridgeless 3 kW PFC circuit. The main aim of the study is the experimental evaluation of the dynamic properties and driving power requirements of the transistors, for which the parameters are similar. These are competing products from different manufacturers, while the selection criterion was the same type of package technology (7 pin D2PAK). Second, the effect of the transistor type was analysed in terms of the performance efficiency of the PFC circuit. Within the analysis, the

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Suman, Dr J. V., and Nekkali Ramya. "Harnessing Tunnel Field-Effect Transistors for Boolean Function Implementation." INTERANTIONAL JOURNAL OF SCIENTIFIC RESEARCH IN ENGINEERING AND MANAGEMENT 07, no. 12 (2023): 1–13. http://dx.doi.org/10.55041/ijsrem27821.

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In the pursuit of advancing digital integrated circuits, the exploration of novel transistor technologies has become imperative. It presents a comprehensive exploration of the implementation of Boolean functions utilizing Tunnel Field-Effect Transistors (TFETs). TFETs offer unique advantages over traditional MOSFETs, such as reduced leakage current and lower power consumption, making them a promising candidate for next-generation digital circuitry.The acronym "DGTFET" typically stands for "Double Gate Tunnel Field-Effect Transistor." A Double Gate Tunnel Field-Effect Transistor is a type of tr

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36

Hähnlein, Bernd, Benjamin Händel, Frank Schwierz, and Jörg Pezoldt. "Properties of Graphene Side Gate Transistors." Materials Science Forum 740-742 (January 2013): 1028–31. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1028.

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Epitaxial graphene grown on semiinsulating silicon carbide was used to fabricate side gate graphene transistors. The transconductance of the side gate transistors is comparable to top gate designs. The transconductance decreases with increasing gate width independently on the gate to channel distance in agreement with the transconductance reduction in top gate transistor configu¬rations with increasing channel length. The transconductance of the side gate transistors decreases with increasing channel width due to a decreased specific gate capacitance.

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37

Wang, Yao, Yuedan Wang, Rufeng Zhu, and Dong Wang. "Research progress of fibre-based organic electrochemical transistors." Wearable Technology 2, no. 2 (2022): 67. http://dx.doi.org/10.54517/wt.v2i2.1650.

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Abstract (sommario):

<p>Organic electrochemical transistors are flexible in design with characteristics such as miniaturisation, biocompatibility and amplification and are one of the rapidly developing research topics in recent years. As an excellent flexible material, fibre has unparalleled advantages in weaving and compatibility with the human body. Combining fibres with organic electrochemical transistors is a promising research direction that has the high sensitivity of organic electrochemical transistor testing and the human body compatibility and flexibility of wearable electronic products. This paper

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38

Burg, David, and Jesse H. Ausubel. "Moore’s Law revisited through Intel chip density." PLOS ONE 16, no. 8 (2021): e0256245. http://dx.doi.org/10.1371/journal.pone.0256245.

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Abstract (sommario):

Gordon Moore famously observed that the number of transistors in state-of-the-art integrated circuits (units per chip) increases exponentially, doubling every 12–24 months. Analysts have debated whether simple exponential growth describes the dynamics of computer processor evolution. We note that the increase encompasses two related phenomena, integration of larger numbers of transistors and transistor miniaturization. Growth in the number of transistors per unit area, or chip density, allows examination of the evolution with a single measure. Density of Intel processors between 1959 and 2013

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39

Hasan, Ghanim Thiab, Ali Hlal Mutlaq, and Kamil Jadu Ali. "Comparative evaluation of SiC/GaN “MOSFET” transistors under different switching conditions." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 681–90. http://dx.doi.org/10.11591/eei.v11i2.3445.

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The aim of this paper is to conduct a mutual comparison of switching energy losses in cascade gallium nitride (GaN) and silicon "super junction" MOSFET” transistor, in both cases designed for a maximum operating voltage of (650 V). For the analysis of switching characteristics of transistors used double pulse test method by using detailed SPICE simulation model. Data on transient on and off processes were generated using the “LTspice” simulation package in a wide range of drain currents with two different gate resistance values of the tested transistors. The total energy losses in the GaN have

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40

Андреев, А. А., Ю. В. Грищенко, И. C. Езубченко та ін. "Изучение характеристик транзисторов на гетероструктурах нитрида галлия, выращенных методом аммиачной молекулярно-лучевой эпитаксии на подложках сапфира и кремния". Письма в журнал технической физики 45, № 4 (2019): 52. http://dx.doi.org/10.21883/pjtf.2019.04.47340.17567.

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AbstractsAmmonia molecular-beam epitaxy has been used to grow gallium nitride (GaN) transistor heterostructures on sapphire and silicon substrates. GaN transistors with a 1.2-mm periphery fabricated on substrates of both types exhibited similar high static characteristics: saturation current density above 0.75 A/mm, transconductance above 300 mS/mm, and breakdown voltage above 120 V. Measurements of the small-signal parameters showed that transistors based on silicon substrates possessed high gain in a frequency range up to 5 GHz; the specific output power at 1 GHz amounted to 5 W/mm for trans

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41

Gadgiev, H. M., Sh T. Ismailova, and P. A. Kurbanova. "Kurbanova. Design of energy-efficient high-speed computer equipment based on cost-effective light transistors." Herald of Dagestan State Technical University. Technical Sciences 47, no. 4 (2021): 20–26. http://dx.doi.org/10.21822/2073-6185-2020-47-4-20-26.

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Objective. The article deals with the formation of cost-effective light transistors for creating high-speed energy-efficient computer structures that can solve numerous problems with high speed and accuracy. For this purpose, various types of semiconductor structures are used that can emit and absorb photons for receiving and transmitting digital information.Methods. The use of mirror electrodes allows for repeated re-reflection of the generated photons inside the light transistor to recover all the generated energy into electricity. This increases the energy efficiency of the transistor as a

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42

Agha, Firas, Yasir Naif, and Mohammed Shakib. "Review of Nanosheet Transistors Technology." Tikrit Journal of Engineering Sciences 28, no. 1 (2021): 40–48. http://dx.doi.org/10.25130/tjes.28.1.05.

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Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this r

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43

Zanchin, Vinicius Ramos, Marco Roberto Cavallari, and Fernando Josepetti Fonseca. "Stability of Polythiophene-Based Transistors upon Bending for Gas Sensing Applications." Journal of Integrated Circuits and Systems 16, no. 1 (2021): 1–6. http://dx.doi.org/10.29292/jics.v16i1.161.

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It is presented herein a fabrication procedure for organic thin film transistors over flexible substrates, as well as an evaluation of the electrical performance upon bending stresses. Top gate/bottom contact flexible transistors of poly(3-hexylthiophene) (P3HT) were successfully fabricated, by carefully tuning organic films drying temperatures, photolithography solvents and the pattern of electrode pads. The transistors were processed over both rigid and flexible substrates for comparison purposes. A P3HT hole mobility approaching 0.01 cm2/Vs was observed for all devices and even on different

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44

Qi, Cheng, Yaswanth Rangineni, Gary Goncher, Raj Solanki, Kurt Langworthy, and Jay Jordan. "SiGe Nanowire Field Effect Transistors." Journal of Nanoscience and Nanotechnology 8, no. 1 (2008): 457–60. http://dx.doi.org/10.1166/jnn.2008.083.

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Abstract (sommario):

Si0.5Ge0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V−1s−1. Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V−1s−1.

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45

Тарасова, Е. А., С. В. Оболенский, C. В. Хазанова та ін. "Компенсация нелинейности сток-затворной вольт-амперной характеристики в полевых транзисторах с длиной затвора ~100 нм". Физика и техника полупроводников 54, № 9 (2020): 968. http://dx.doi.org/10.21883/ftp.2020.09.49841.35.

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Abstract The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.

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46

Wang, Qingyu. "Application of the quantum effects of single-electron transistors in low-power." Applied and Computational Engineering 130, no. 1 (2025): 102–7. https://doi.org/10.54254/2755-2721/2025.20293.

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Abstract (sommario):

As the feature size of transistors approaches the 2nm limit, quantum effects become more pronounced as a result of devices that cannot work properly. Conventional MOSFET architectures are difficult to solve the problems. Therefore, new transistor architectures need to be developed. As a new transistor architecture, the single-electron transistor (SET) working based on quantum effects and has a very low power consumption. This paper analyzed working principle of single-electron transistor (SET) and compared the advantages of its extremely low power consumption in quantum computing with MOSFET.

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47

Holloway, Peter R. ""One Transistor, Two Transistors, Three"." IEEE Solid-State Circuits Magazine 5, no. 3 (2013): 21–28. http://dx.doi.org/10.1109/mssc.2013.2266056.

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48

Saman, Bander, P. Gogna, El-Sayed Hasaneen, J. Chandy, E. Heller, and F. C. Jain. "Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation." International Journal of High Speed Electronics and Systems 26, no. 03 (2017): 1740009. http://dx.doi.org/10.1142/s0129156417400092.

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Abstract (sommario):

This paper presents the design and simulation of static random access memory (SRAM) using two channel spatial wavefunction switched field-effect transistor (SWS-FET), also known as a twin-drain metal oxide semiconductor field effect transistor (MOS-FET). In the SWS-FET, the channel between source and drain has two quantum well layers separated by a high band gap material between them. The gate voltage controls the charge carrier concentration in the quantum well layers and it causes the switching of charge carriers from one channel to other channel of the device. The standard SRAM circuit has

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49

Litvinov, Nikolay, Maksim Solodilov, Aleksey Plotnikov, Sergey Vital'evich Stoyanov, Artem Lapshin, and Roman Ryazancev. "Simulation of the behavior of field-effect transistors when exposed to radiation." Modeling of systems and processes 15, no. 3 (2022): 24–34. http://dx.doi.org/10.12737/2219-0767-2022-15-3-24-34.

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Abstract (sommario):

The paper deals with the behavior of field-effect transistors under the influence of radiation. The structure of tunnel field-effect transistors, the principle of operation, various effects from exposure to ionization radiation from outer space, and the results of experimental studies of resistance are presented. Field-effect transistors based on single-layer materials such as graphene and MoS2 are also considered. The behavior of field-effect transistors based on graphene is simulated. The paper presents current-voltage characteristics before and after irradiation, at positive and negative vo

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50

Wang, Ruixi. "Will other materials replace silicon for use in transistors for integrated circuits?" Advances in Engineering Innovation 16, no. 4 (2025): None. https://doi.org/10.54254/2977-3903/2025.22395.

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Abstract (sommario):

Moore's Law states that the number of transistors in an integrated circuit doubles approximately every two years. Due to the physical limits of silicon transistors, there is a need for a material with better development potential than silicon to make transistors, in order to develop more advanced integrated circuits. Looking back at the literature, research has been going on for decades, and currently the promising materials are gallium and germanium, which have different properties; gallium compounds are well suited for semiconductors, Gallium nitride can withstand higher electric fields and

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