Gotowe bibliografie tematyczne / Atomic Al-doping

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Gotowa bibliografia na temat „Atomic Al-doping”

Autor: Grafiati

Data publikacji: 2 czerwca 2025

Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "Atomic Al-doping"

Afifah, Faras, Arif Tjahjono, Aga Ridhova, Pramitha Yuniar Diah Maulida, Alfian Noviyanto, and Didik Aryanto. "Influence of Al and Cu Doping on the Structure, Morphology, and Optical Properties of ZnO Thin Film." Indonesian Journal of Chemistry 23, no. 1 (2023): 44. http://dx.doi.org/10.22146/ijc.73234.

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In this study, ZnO thin films doped with Al (AZO) and Cu (CZO) were fabricated on a glass substrate via sol-gel spin coating. The influence of 1 atomic % Al and Cu doping on the structure, morphology, as well as optical properties of ZnO thin film was then analyzed with X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis spectroscopy. XRD analysis revealed that all samples possessed hexagonal wurtzite crystal structures with 3 to 4 preferred orientations. Al and Cu doping caused a decrease in crystal size, while the lattice strain (e) and dislocation density (ρ) were increased.

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Yang, Junru, Yanping Yue, Yan Wang, and Yuekan Zhang. "Interface Bonding Properties of CrAlSiN-Coated Cemented Carbides Doped with CeO2 and Y2O3 Rare Earth Oxides." Molecules 28, no. 8 (2023): 3584. http://dx.doi.org/10.3390/molecules28083584.

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This study performed first-principle-based calculations of the interface adhesion work in interface models of three terminal systems: CrAlSiNSi/WC-Co, CrAlSiNN/WC-Co, and CrAlSiNAl/WC-Co. The results proved that the CrAlSiNSi/WC-Co and CrAlSiNAl/WC-Co interface models had the highest and lowest interface adhesion work values (4.312 and 2.536 J·m−2), respectively. Thus, the latter model had the weakest interface bonding property. On this basis, rare earth oxides CeO2 and Y2O3 were doped into the Al terminal model (CrAlSiNAl/WC-Co). Then, doping models of CeO2 and Y2O3 doped on the WC/WC, WC/Co,

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Zhu, Hongmei, Zhengjie Zhang, and Xuchuan Jiang. "Effect of Al, Ti and Cr Doping on Vanadium Dioxide (VO2) Analyzed by Density Function Theory (DFT) Method." Journal of Nanoscience and Nanotechnology 20, no. 3 (2020): 1651–59. http://dx.doi.org/10.1166/jnn.2020.17140.

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Density function theory (DFT) method was developed and applied for fundamentally understanding the doping effect of various metals (Al, Ti and Cr) on vanadium dioxide (VO2). The substitution doping of Al, Ti and Cr in VO2 could lead to significant changes in electronic structure, band gap and optical property. Different from physical experiments, the DFT method could be utilized for fundamental understandings at an atomic scale. It was found via DFT calculations that: (i) Al doping caused a slightly distorted octahedron in monoclinic VO2(M), and narrowed the band gap of VO2(M) due to the upwar

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Lu, Ke, Haiping Xu, Haiying He, et al. "Modulating reactivity and stability of metallic lithium via atomic doping." Journal of Materials Chemistry A 8, no. 20 (2020): 10363–69. http://dx.doi.org/10.1039/d0ta02176h.

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Xie, Ming, Tao Hu, Liu Yang, and Yun Zhou. "Synthesis of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and conformal Al2O3 coating by atomic layer deposition." RSC Advances 6, no. 68 (2016): 63250–55. http://dx.doi.org/10.1039/c6ra10531a.

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The electrochemical properties of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and a conformal Al2O3 coating by atomic layer deposition were studied in this paper.

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Krishnan, Bharat, Siva Prasad Kotamraju, Galyna Melnychuk, Neil Merrett, and Yaroslav Koshka. "Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 581–84. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.581.

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Low-temperature halo-carbon homoepitaxial growth is suitable for selective epitaxial growth of 4H-SiC using SiO2 mask. A possibility of achieving high values of doping in combination with the selective growth makes it an alternative to ion implantation for selective doping in SiC. In this work, TMA doping in situ during a blanket low-temperature epitaxial growth was utilized to produce heavily Al doped SiC layers for Ohmic contact formation to p-type SiC. Nearly featureless epilayer morphology with Al atomic concentration exceeding 3x1020 cm-3 was obtained after growth at 13000C with the growt

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Zhao, Kai, Jingye Xie, Yudi Zhao, et al. "Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process." Nanomaterials 12, no. 1 (2022): 172. http://dx.doi.org/10.3390/nano12010172.

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron conce

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Al-Mosawi, Buraq T. Sh, Mohammed K. Al-Hashimi, and Ameer F. Abdulameer. "Aluminum-Doped Titanium Dioxide Thin Films: A Study of Different Concentrations on Poly(3-hexylthiophene): PhenylC61-Butyric Acid Metheyester-Based Organic Solar Cells." Journal of Computational and Theoretical Nanoscience 17, no. 11 (2020): 4849–54. http://dx.doi.org/10.1166/jctn.2020.9409.

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Sol–gel preparation method usually used to prepare the metal oxides. So, it is a rewarding process to prepare the electron selective film made of aluminum-doped titanium dioxide (Al-doped TiO2). The latter was used to fabricate the inverted organic solar cells P2HT:PCBM. The doping content with Al impact on the optical and morphological characteristics of each film were examined. These characteristics were analyzed depending on the magnified images of the prepared samples by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) in addition to the Uv-vis spe

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Czelej, Kamil, Marcin Roland Zemła, Piotr Śpiewak, Tomasz Wejrzanowski, and Krzysztof Jan Kurzydłowski. "Atomic-scale computational design of hydrophobic RE surface-doped Al2O3 and TiO2." Physical Chemistry Chemical Physics 19, no. 31 (2017): 21119–26. http://dx.doi.org/10.1039/c7cp03109b.

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Aounallah, Hadia, Mourad Zaabat, Abdelouahab Noua, and Tarek Diab Ounis. "Structural, Morphological and Optical Properties of (Mn, Al) Co-Doped ZnO Thin Films Prepared by Sol-Gel Dip Coating Method." Advanced Engineering Forum 44 (January 17, 2022): 17–28. http://dx.doi.org/10.4028/www.scientific.net/aef.44.17.

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In this study, Aluminum (Al) and Manganese (Mn) co-doped ZnO thin films were successfully synthesized into glass substrates by the sol-gel dip-coating method with different Al concentrations (1%, 3%, and 5%). The structural, morphological, and optical properties of the obtained thin ﬁlms were characterized by X-ray diffraction (XRD), Atomic force microscopy (AFM), and UV–VIS spectroscopy. XRD pattern revealed that the films have a polycrystalline hexagonal structure with a preferred orientation along (101) for undoped ZnO thin films, further the co-doped ZnO thin films show a shift in the pref

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Rozprawy doktorskie na temat "Atomic Al-doping"

Lin, Feng-Qing, and 林峰慶. "Epitaxial Al-doped ZnO Thin Films by Using In-situ Doping Atomic Layer Deposition." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/07251308270452230725.

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碩士 國立交通大學 工學院加速器光源科技與應用碩士學位學程 102 We utilize the atomic layer deposition method to deposited nonpolar epitaxial Al-doped ZnO thin films on (101 ̅0) M-plane sapphire substrate. The purpose of this research which was try to understand the growth conductions and doping mechanism for for ZnO thin films on side well of nanorod. In this work, we characterize the properties of ZnO thin films include undoped, 1:9 and 1:15 ratio ZnO:Al thin films and annealing in vacuum from 300 to 750 degree. For analysis, we use synchrotron 8-circle diffractmeter, Hall measurement, photoluminescence and x

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Części książek na temat "Atomic Al-doping"

Baturay, Şilan, and Canan Aytuğ Ava. "Al Doping Influence on Structural, Morphological and Optical Properties of CuO Films." In Versatile Approaches to Engineering and Applied Sciences: Materials and Methods. Özgür Yayınları, 2023. http://dx.doi.org/10.58830/ozgur.pub50.c45.

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In this study, CuO nanostructured films conjunction with metal doping have been deposited onto soda lime glass (SLG) substrate by method of spin coating at different doping concentration in solution (0%, 2% and 4%). X-ray diffraction (XRD) patterns for copper oxide films conjunction with Al doping demonstrated that the films have polycrystalline structure and have preferential growth in (-111) and (200) directions. Calculated dislocation density value of (-111) plane is changed between 3.7 x 1014 and 5.83 x 1014 m-2 and 83.7 x 1014 and 50.6 x 1014 m-2 for (200) owing to the expansion of struct

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Misra, Kamakhya Prakash. "Al Doped ZnO Thin Films: Beginning to Developments Afoot." In Materials Science: A Field of Diverse Industrial Applications. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815051247123010005.

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In the last three decades, Zinc oxide (ZnO) has been found to be one of the most resourceful materials having tremendous potential applications in manifolds covering a wide variety of areas. It is continuously explored in different forms and structures. ZnO-based layers have an established place in the industry that ranges from protecting degradable items to detecting toxic gases. A wide variety of ZnO-based advanced coatings and their surface treatments along with innovative functionalization technologies offer a multitude of options for making them useful in diverse industries. Multiple tech

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Enoki, Toshiaki, Morinobu Endo, and Masatsugu Suzuki. "Intercalated Fullerenes and Carbon Nanotubes." In Graphite Intercalation Compounds and Applications. Oxford University Press, 2003. http://dx.doi.org/10.1093/oso/9780195128277.003.0014.

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Since the discovery of soccer-ball-shaped C60 (Kroto et al., 1985), fullerenes have been added to the family of allotropes of carbon element. During the fullerene formation by arc-discharge of graphite electrodes, carbon nanotubes were simultaneously grown as a deposit on the electrode (Iijima, 1991). The carbon nanotubes consist of single or multiple graphene sheets rolled in the form of a seamless cylinder, with the diameter of the hollow core being almost 10 Å (similar to that of fullerenes) or even as small as 4 Å. For these new forms of nanometer-sized carbon, so-called nanocarbons, basic

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Streszczenia konferencji na temat "Atomic Al-doping"

Mohammadnejad, Shahram, and Mahdiyar Nouri Rezaie. "Analysis and atomic simulation of electron structures and defects in ZnO nano-crystal for its optimal doping with Al." In 2017 IEEE 4th International Conference on Knowledge-Based Engineering and Innovation (KBEI). IEEE, 2017. http://dx.doi.org/10.1109/kbei.2017.8324947.

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Bhushan, Bharat. "Tribology on the Macro- to Nanoscales of MEMS Materials: A Review." In ASME 1998 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/imece1998-1252.

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Abstract Silicon-based MEMS devices are made from single-crystal silicon, LPCVD polysilicon films and other ceramic films (Bhushan, 1998). For high temperature applications, SiC films are being developed to replace polysilicon films. Tribology in the MEMS devices requiring relative motion is of importance. Atomic force/friction force microscopy (AFM/FFM) and nanoindentation techniques (Bhushan et al., 1995; Bhushan, 1995, 1998) have been used for tribological studies on micro- to nanoscale on materials of interest. These techniques have been used to study surface roughness, friction, scratchin

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Ngoc, Hoang Van. "Doping two Al atoms in silicene nanoribbons in the electric field." In 2ND INTERNATIONAL CONFERENCE ON MATERIALS FOR ENERGY AND ENVIRONMENT 2020. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0136022.

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