Gotowe bibliografie tematyczne / Bulk-Driven MOS transistor

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  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Streszczenia konferencji

Gotowa bibliografia na temat „Bulk-Driven MOS transistor”

Autor: Grafiati
Data publikacji: 3 czerwca 2025
Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "Bulk-Driven MOS transistor"

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Shainda, J. Tahseen*1 Sandeep Singh 2. "REVIEW PAPER ON PSEUDO-DIFFERENTIAL AND BULK-DRIVEN MOS TRANSISTOR TECHNIQUE FOR OTA." INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY 6, no. 7 (2017): 596–601. https://doi.org/10.5281/zenodo.829785.

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This paper presents review on Pseudo-Differential amplifier technique and Bulk-Driven MOS transistor technique for ultra-low voltage and power. By using this technique, a different design of operational transconductance amplifier (OTA) is briefly explained along with their outputs and their application. By using a pseudo-differential technique a voltage drop across the tail current is avoid as the tail-current is removed in Pseudo-differential amplifier where as by using the Bulk-Driven MOS transistor a minimum supply voltage is achieved because of the possibility in reduction of threshold vol
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Carrillo, Juan M., та Carlos A. de la Cruz-Blas. "0.6-V 1.65-μW Second-Order Gm-C Bandpass Filter for Multi-Frequency Bioimpedance Analysis Based on a Bootstrapped Bulk-Driven Voltage Buffer". Journal of Low Power Electronics and Applications 12, № 4 (2022): 62. http://dx.doi.org/10.3390/jlpea12040062.

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A bootstrapping technique used to increase the intrinsic voltage gain of a bulk-driven MOS transistor is described in this paper. The proposed circuit incorporates a capacitor and a cutoff transistor to be connected to the gate terminal of a bulk-driven MOS device, thus achieving a quasi-floating-gate structure. As a result, the contribution of the gate transconductance is cancelled out and the voltage gain of the device is correspondingly increased. The technique allows for implementing a voltage follower with a voltage gain much closer to unity as compared to the conventional bulk-driven cas
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Khateb, Fabian. "The experimental results of the bulk-driven quasi-floating-gate MOS transistor." AEU - International Journal of Electronics and Communications 69, no. 1 (2015): 462–66. http://dx.doi.org/10.1016/j.aeue.2014.10.016.

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Khateb, Fabian, Tomasz Kulej, Montree Kumngern, and Costas Psychalinos. "Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications." Circuits, Systems, and Signal Processing 38, no. 6 (2018): 2829–45. http://dx.doi.org/10.1007/s00034-018-0999-x.

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Rajesh, Durgam, Tami Subramanian, Raj Nikhil, and Chourasia Bharti. "Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 765–71. https://doi.org/10.11591/eei.v11i2.3306.

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A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low voltage operation and improves the gain of the amplifier. Besides to this the tail current source requirement of operational transconductance amplifier (OTA) is removed by using the flipped voltage follower structure at the input pair along with bulk driven quasi-floating gate MOSFET. The proposed operational transconductance amplifier shows a
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Rajesh, Durgam, Subramanian Tamil, Nikhil Raj, and Bharti Chourasia. "Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 765–71. http://dx.doi.org/10.11591/eei.v11i2.3306.

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A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low voltage operation and improves the gain of the amplifier. Besides to this the tail current source requirement of operational transconductance amplifier (OTA) is removed by using the flipped voltage follower structure at the input pair along with bulk driven quasi-floating gate MOSFET. The proposed operational transconductance amplifier shows a
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Kumngern, Montree, Fabian Khateb, and Tomasz Kulej. "0.5 V, Low-Power Bulk-Driven Current Differencing Transconductance Amplifier." Sensors 24, no. 21 (2024): 6852. http://dx.doi.org/10.3390/s24216852.

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This paper presents a novel low-power low-voltage current differencing transconductance amplifier (CDTA). To achieve a low-voltage low-power CDTA, the BD-MOST (bulk-driven MOS transistor) technique operating in a subthreshold region is used. The proposed CDTA is designed in 0.18 µm CMOS technology, can operate with a supply voltage of 0.5 V, and consumes 1.05 μW of power. The proposed CDTA is used to realize a current-mode universal filter. The filter can realize five standard transfer functions of low-pass, band-pass, high-pass and band-stop, and all-pass from the same circuit. Neither compon
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KHATEB, FABIAN, NABHAN KHATIB, PIPAT PROMMEE, WINAI JAIKLA, and LUKAS FUJCIK. "ULTRA-LOW VOLTAGE TUNABLE TRANSCONDUCTOR BASED ON BULK-DRIVEN QUASI-FLOATING-GATE TECHNIQUE." Journal of Circuits, Systems and Computers 22, no. 08 (2013): 1350073. http://dx.doi.org/10.1142/s0218126613500734.

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This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of ±300 mV and low power consumption of 18 μW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order Gm-C
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Khateb, Fabian, Tomasz Kulej, Harikrishna Veldandi, and Winai Jaikla. "Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits." AEU - International Journal of Electronics and Communications 100 (February 2019): 32–38. http://dx.doi.org/10.1016/j.aeue.2018.12.023.

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Kumngern, Montree, Fabian Khateb, Tomasz Kulej, and Natchayathorn Wattikornsirikul. "Design of Shadow Filter Using Low-Voltage Multiple-Input Operational Transconductance Amplifiers." Applied Sciences 15, no. 2 (2025): 781. https://doi.org/10.3390/app15020781.

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This paper introduces shadow filters that employ multiple-input operational transconductance amplifiers (MI-OTAs) as the active component. Two configurations of shadow filters are proposed. The first configuration, in contrast to previous designs, enables the adjustment of the quality factor without affecting the passband gains of the BPF, LPF, and HPF, thus achieving optimal frequency responses for these filters. The second configuration allows for the variation of the natural frequency without impacting the passband gains of the HPF, LPF, and BPF, maintaining constant passband gains. Moreove
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Rozprawy doktorskie na temat "Bulk-Driven MOS transistor"

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Ράικος, Γεώργιος. "Αναλογικά κυκλώματα χαμηλής τροφοδοσίας με MOS τρανζίστορ οδηγούμενα από το υπόστρωμα". Thesis, 2011. http://hdl.handle.net/10889/5093.

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Τα τελευταία χρόνια η ανάγκη για αναλογικά ολοκληρωμένα κυκλώματα με χαμηλή τάση τροφοδοσίας και χαμηλή ισχύ γίνεται κάτι περισσότερο από επιτακτική. Ο βασικότερος λόγος για την ανάγκη αυτή είναι η ραγδαία ανάπτυξη από φορητές ηλεκτρονικές συσκευές για εφαρμογές πολυμέσων (laptops, netbooks, mobiles) έως ολοκληρωμένων συστημάτων βιοιατρικών εφαρμογών. Μάλιστα σε πολλές περιπτώσεις απαιτείται αυτές οι ηλεκτρονικές συσκευές να έχουν δυνατότητα διασύνδεσης σε ασύρματα δίκτυα (WLANs) και επομένως επιβάλλεται η ενσωμάτωση συστημάτων πομποδεκτών. Έτσι, οι απαιτήσεις για όσο το δυνατόν μικρότερη κατα
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Streszczenia konferencji na temat "Bulk-Driven MOS transistor"

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Thongleam, Thawatchai, Apirak Suadet, and Varakorn Kasemsuwan. "Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor." In 2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2016. http://dx.doi.org/10.1109/ecticon.2016.7561359.

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Nagyt, Lukas, Daniel Arbet, Martin Kovac, Miroslav Potocny, Michal Sovcik, and Viera Stopjakova. "EKV MOS Transistor Model For Ultra Low-Voltage Bulk-Driven IC Design." In 2021 24th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS). IEEE, 2021. http://dx.doi.org/10.1109/ddecs52668.2021.9417051.

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Thongleam, Thawatchai. "Low-voltage CFOA with bulk-driven, quasi-floating-gate and bulk-driven-quasi-floating-gate MOS transistors." In TENCON 2015 - 2015 IEEE Region 10 Conference. IEEE, 2015. http://dx.doi.org/10.1109/tencon.2015.7373175.

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Carrillo, J. M., M. A. Dominguez, J. F. Duque-Carrillo, and G. Torelli. "1.2-V fully differential OTA-C lowpass filter based on bulk-driven MOS transistors." In 2011 European Conference on Circuit Theory and Design (ECCTD). IEEE, 2011. http://dx.doi.org/10.1109/ecctd.2011.6043311.

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Popa, C., and D. Coada. "A new linearization technique for a CMOS differential amplifier using bulk-driven weak inversion MOS transistors." In International Symposium on Signals, Circuits and Systems, 2003. SCS 2003. IEEE, 2003. http://dx.doi.org/10.1109/scs.2003.1227121.

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