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Rozprawy doktorskie na temat „CMOS Temperature Sensor”

Autor: Grafiati

Data publikacji: 2 czerwca 2025

Data aktualizacji: 31 lipca 2025

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1

Berber, Feyza. "CMOS temperature sensor utilizing interface-trap charge pumping." Texas A&M University, 2005. http://hdl.handle.net/1969.1/4157.

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The objective of this thesis is to introduce an alternative temperature sensor in CMOS technology with small area, low power consumption, and high resolution that can be easily interfaced. A novel temperature sensor utilizing the interfaceÃ¢ÂÂtrap charge pumping phenomenon and the temperature sensitivity of generation current is proposed. This thesis presents the design and characterization of the proposed temperature sensor fabricated in 0.18ÃÂµm CMOS technology. The prototype sensor is characterized for the temperature range of 27oCÃ¢ÂÂ120oC. It has frequency output and exhibits linear

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Sun, Da Peng. "Process compensated CMOS temperature sensor exploiting piecewise base recombination current." Thesis, University of Macau, 2018. http://umaclib3.umac.mo/record=b3950680.

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Yu, Xinyu. "High-temperature Bulk CMOS Integrated Circuits for Data Acquisition." Case Western Reserve University School of Graduate Studies / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=case1144420886.

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Sarfraz, Sohab. "A high temperature gas flow invariant thermal conductivity sensor developed in SOI CMOS MEMS technology." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708412.

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Asgari, Mohammadreza. "FULLY-INTEGRATED CMOS PH, ELECTRICAL CONDUCTIVITY, AND TEMPERATURE SENSING SYSTEM." University of Akron / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=akron1533827604228324.

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6

Hassine, Souha. "Application du pont actif différentiel à la mesure de la température faible consommation sur CMOS." Thesis, Montpellier 2, 2013. http://www.theses.fr/2013MON20217/document.

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Au sein de l'équipe « Microsystèmes » du LIRMM, plusieurs capteurs ont été développés basés sur des structures mécaniques ou thermiques pour réaliser des fonctions de transduction, et ce dans un contexte d'intégration de capteurs à l'aide de technologies microélectroniques standards (MOS). Ces capteurs sont majoritairement résistifs car simples à concevoir et économiques à fabriquer. Néanmoins, parmi leurs inconvénients majeurs, la consommation et le bruit sont les plus notables. Dans une thèse précédente, un circuit de conditionnement nouveau appelé ‘pont Actif' a été proposé. Ce circuit, pré

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Hayasaka, Henrique Mamoru. "Sensor de temperatura CMOS integrado." Florianópolis, 2012. http://repositorio.ufsc.br/xmlui/handle/123456789/100412.

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Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica<br>Made available in DSpace on 2013-06-25T18:56:44Z (GMT). No. of bitstreams: 1 311575.pdf: 5522559 bytes, checksum: 9e8349702aedb6c1092590cc5eaa1a81 (MD5)<br>Este trabalho apresenta um sensor de temperatura CMOS integrado voltado ao monitoramento de hot-spots em circuitos VLSI. Seu funcionamento é baseado no comportamento CTAT (complementar a temperatura absoluta) da tensão de limiar do transistor MOS. Devido a este fato, inicia-se a dissertação apresentando al

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8

Carvalho, Rui Eduardo Lopes. "Camera sensor for smart buildings." Master's thesis, Universidade de Aveiro, 2018. http://hdl.handle.net/10773/23536.

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Mestrado em Engenharia Eletrónica e Telecomunicações<br>Com o aumento da prevalência das tecnologias IoT e a perseguição constante da automação de todas as ações simples do nosso dia-a-dia, a existência sensores simples e com pouco consumo de energia no nosso mundo tem tendência a tornar-se omnipresente. Uma área de estudo interessante seria como controlar eficientemente a luminosidade e a temperatura de uma sala. A solução mais óbvia seria dispersar vários sensores equidistantes pela área a examinar, contudo a rede seria demasiado complexa do que seria expectável para um problema desta dime

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9

Zimouche, Hakim. "Capteur de vision CMOS à réponse insensible aux variations de température." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00656381.

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Les capteurs d'images CMOS sont de plus en plus utilisés dans le domaine industriel : la surveillance, la défense, le médical, etc. Dans ces domaines, les capteurs d'images CMOS sont exposés potentiellement à de grandes variations de température. Les capteurs d?images CMOS, comme tous les circuits analogiques, sont très sensibles aux variations de température, ce qui limite leurs applications. Jusqu'à présent, aucune solution intégrée pour contrer ce problème n'a été proposée. Afin de remédier à ce défaut, nous étudions, dans cette thèse, les effets de la température sur les deux types d'image

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10

Marica, Popović. "Фотоакустички одзив трансмисионе фотоакустичке конфигурације и анализа резонантних феномена за двослојне узорке са топлотном меморијом". Phd thesis, Univerzitet u Novom Sadu, Fakultet tehničkih nauka u Novom Sadu, 2016. https://www.cris.uns.ac.rs/record.jsf?recordId=101623&source=NDLTD&language=en.

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У докторској дисертацији изведени су модели за фотоакустички одзив рефлексионе и трансмисионе конфигурације за оптички провидне двослојне узорке са топлотном меморијом, који представља генерализацију до сада коришћених модела и то у три правца: урачунат је утицај коначне брзине простирања топлоте кроз оба слоја, генерализован је модел тако да узме у обзир постојање запреминске апсорпције кроз оба слоја и урачунат је утицај ћелије минималне запремине која се понаша као Хелмхолцов резонатор. Применом овог модела на експериментална мерења показано је да се може проширити фреквентни опсег користан

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11

Cheng, Lan-Shan, and 鄭嵐瑄. "Design of CMOS Chopper Temperature Sensor." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/61364617988166674644.

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碩士<br>國立清華大學<br>電子工程研究所<br>92<br>A CMOS chopper temperature sensor is present. Accurate bandgap reference and PTAT voltage are designed. The circuit uses substrate bipolar transistors as a temperature sensing element. In order to reduce the effect of the offset voltage of the operational amplifier in the circuit, we use the chopper stabilization technique to eliminate the offset voltage. The complete system is realized in a double metal 0.6�慆 CMOS process, and the chip size is 1.3mm2. In the temperature range from -55 to 125�aC, the total inaccuracy of bandgap reference and PTAT voltage is 3.5

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12

Lin, Bo-sheng, and 林伯聲. "A High-Resolution CMOS Temperature Sensor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/67484243287193194930.

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碩士<br>國立雲林科技大學<br>電子與資訊工程研究所<br>99<br>This work presents a current mode linear temperature sensor through summing two temperature-dependent current sources driven in particular region with complementary temperature dependency. The nonlinear effects induced by carrier mobility and threshold voltage are therefore cancelled, indeed, not only improves linearity but also enhances driving capability. In addition, a window comparator is adopted to convert current quantity into representation of pulse width. To increase the conversion accuracy, we develop a differential calibration to reduce the unide

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13

Yang, Julian, and 楊宙穎. "CMOS Temperature Sensor and Bandgap Voltage Reference." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/64563h.

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碩士<br>國立交通大學<br>電子物理系所<br>92<br>A temperature sensing system with digital output consists of a front part and a rear part. The front part includes temperature sensor and bandgap voltage reference. The rear part is an analog to digital converter (ADC). In CMOS technology, the BJT device is used as the basic temperature sensor. The base-emitter voltage (VEB) can be approximated as a linear function of temperature. By using it, temperature sensor and bandgap voltage reference can be accomplished. The simulation of the front part using a standard TSMC 0.25um 1P5M CMOS process is presented in the t

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14

Hong, Kai-Lun, and 洪楷綸. "Design of A Precise CMOS Temperature Sensor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/8vk4y6.

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碩士<br>國立雲林科技大學<br>電子工程系<br>102<br>This work presents a current mode linear temperature sensor through summing two temperature-dependent current sources driven in particular region with complementary temperature dependency. The nonlinear effects induced by carrier mobility and threshold voltage are therefore cancelled, indeed, not only improves linearity but also enhances driving capability. In addition, a window comparator is adopted to convert current quantity into representation of pulse width. To increase the conversion accuracy, we develop a differential calibration to reduce the unideal e

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15

Fu, Chien-Cheng, and 傅建程. "CMOS BIOSENSOR READOUT CIRCUIT WITH TEMPERATURE SENSOR." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/61626205578424005036.

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碩士<br>國立高雄師範大學<br>電子工程學系<br>101<br>The ion-sensitive field effect transistor (ISFET), introduced first by Bergveld in 1970, combined the chemical-sensitive membrane with the metal-oxide-semiconductor field effect transistor. For the past many years, various sensing membrane, readout circuits and calibration methods have been presented. In this thesis, a novel temperature sensor, ISFET structures with built-in gold (Au) reference electrode, and several readout circuits with multiple inputs and an offset sub-circuit are presented. Our laboratory has confirmed previously that the native alumi

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16

Wang, Po-Yueh, and 王伯約. "CMOS Temperature Sensor Arrays for Biosensing Applications." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57522744563027384311.

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碩士<br>國立清華大學<br>電子工程研究所<br>98<br>In this research, we describe the design and characterization of a 8×8 and a 16×16 temperature sensor arrays implemented in a standard CMOS process. The presented construction is based on PMOS transistors operated in saturation region for thermal sensing. Its output level is determined by the sensing PMOS transistor’s saturation current which is proportional to temperature. For the 8×8 sensor array the sensing transistors are placed in the chip center with local polysilicon heaters, preventing other transistors of the sensing circuit from being affected by the

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17

Lin, Nan-Jiun, and 林南君. "CMOS Temperature Sensor Using Nonlinear Curvature Correction." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/94249185952514527206.

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碩士<br>崑山科技大學<br>電子工程研究所<br>101<br>In this paper, a traditional bandgap reference current circuit using pnp bipolar junction transistors (BJTs) is cascaded with a constant-current biasing p-type metal-oxide-semiconductor field effect transistor (PMOSFET). Under a biasing current proportional to or insensitive to absolute temperature for a pnp BJT and a temperature-stable biasing current for a PMOSFET, the plots of emitter-base and source-gate bias voltages versus temperature show negative temperature coefficients. In this work, the output voltage is the sum of bias voltages of a BJT, a PMOSFET,

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18

Yeh, Hsiu-Ming, and 葉修銘. "A New CMOS Smart Temperature Sensor for Sensor Network / RFID Applications." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/27213189551479402526.

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碩士<br>元智大學<br>電機工程學系<br>96<br>In this thesis, a new CMOS Smart temperature sensor which can be applied to sensor networks or RFID is presented. The proposed temperature sensor employs a diode-connected MOS ttransistor as the sensor device while using a simple temperature- compensated bias-current stage and an amplifier stage to achieve high linearity and high output swing. The prototype circuit with a 10-bit dual-slope ADC is designed from a supply of 3.3V in the TSMC 0.35μm CMOS 2P4M standard process. When the temperature rises from 0°C to 100°C, the output voltage swings from 1.32~1.65V. The

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19

Yung-Chung, Lo. "A Novel High-accuracy CMOS Temperature Sensor Design." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709302048.

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Lo, Yung-Chung, and 羅允中. "A Novel High-accuracy CMOS Temperature Sensor Design." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/21725676007835837991.

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碩士<br>國立清華大學<br>電子工程研究所<br>94<br>CMOS temperature sensors have been used extensively in the computer-based applications. The accuracy level of a CMOS temperature sensor is limited by the temperature sensing device, circuit schemes and non-idealities such as mismatches in components, absolute variations and offset voltage in Op-amplifier. These factors usually affect the accuracy of sensors most. Accordingly, the accuracy level and non-idealities of typical voltage-base and current-base temperature sensors are analyzed in detail. This study provides guidelines for designing a high-accuracy temp

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Hsieh, Cheng-Han, and 謝承翰. "Design of Temperature Sensor by CMOS-MEMS Process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/05793761101211725245.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>102<br>In this thesis, a design of a temperature sensor with micro cavity structure is presented for enhancing the absorptivity of incident IR energy. A variety of micro cavity structures with different aperture dimension and metal layers, as well as the incident angle and wavelength, are investigated and analyzed by ZEMAX. The micro cavity structure is fabricated in TSMC 0.18μm 1P6M CMOS-MEMS process provided by CIC. For a unit structure size of 14μm*14μm*8μm, simulation results show the improvement on absorptivity is 10% for oblique incident when compared with ver

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Liu, Wei-Chung, and 劉維鈞. "A Low-Cost CMOS Time-Domain Smart Temperature Sensor." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/50415122330558689604.

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碩士<br>國立高雄第一科技大學<br>電子與資訊工程研究所<br>97<br>Conventional voltage-domain smart temperature sensors usually utilize BJT-based circuits for the temperature sensing, and rely on ADCs for digital output conversion, which occupy large chip areas and have higher power consumptions. Therefore, the time-domain sensors are proposed to be applicable for SOC or VLSI integration. To achieve the goals of low-cost and low-power in the portable systems, a temperature dependent delay time circuit, which composed of a cyclic delay line with CMOS NAND rather than the linear delay line, is utilized to generate a de

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CHANG, CHIH-TIEN, and 張志田. "CMOS Micropower Bandgap Reference, Time Reference and Temperature Sensor." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/17718187721340808673.

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碩士<br>國立臺灣大學<br>電機工程學系研究所<br>86<br>There are three topics in this paper : CMOS micropower bandgap reference, time reference and temperature sensor. The CMOS micropower bandgap referenc e mainly utilizes the traditional concepts of bandgap reference, replaces the original PTAT ( Proportional To Absolute Temperature ) part formed by BJT pair with CMOS devices operating in the weak inversion region. Also uses the verti cal pnp BJT formed by CMOS process. Hoping that under micropower, the circuit could ou

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Yo, Ming-Yi, and 游明義. "Temperature Sensor Design and Application by Using CMOS Technology." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/rsd37z.

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碩士<br>中原大學<br>電子工程研究所<br>91<br>Due to the advantage of compatible with CMOS technology, ISFET sensor integrated with signal processing on a monolith has been proved to work. Investigations have demonstrated that ISFET exist a large thermal instability, which leads to inaccuracy measurement. So to develop different compensation method on ISFETs, is already a hot research topic today. The major objective of this thesis is to discuss the design and application of temperature sensor. In order to have the capability to integrate with ISFET and signal processing, the adopted scheme of the temperat

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Liu, Ssu-Man, and 劉思蔓. "Research on CMOS-MEMS Temperature Sensor Deposited with Graphene." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/b3af7g.

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碩士<br>國立彰化師範大學<br>機電工程學系所<br>105<br>In this research, a novel graphene film manufacturing process was proposed. We found that graphene has positive adsorption characteristics of special process in the electrophoretic deposition, and deposited on the interdigital electrode plate and the chip of laboratory design. Successfully using this method is applied to temperature sensor, which has the advantages of simple process and low energy consumption. In terms of temperature measurement, results of our experiments can be found that interdigital electrode plate temperature sensor for measuring temper

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Chi, Yu, and 游錡. "CMOS Temperature Sensor and Its Application in Temperature Compensation of Sensing Readout Circuits." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/32908523536519808751.

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碩士<br>國立高雄師範大學<br>電子工程學系<br>102<br>The topic of the thesis is CMOS temperature sensor and its application in temperature compensation of censing readout circuits. The research aims at CMOS temperature sensors using a PTAT-voltage driving common-source amplifier with a source resistor, a pulse-output readout circuit with temperature compensation for a temperature- dependent input voltage, and a multi-sensor readout circuit with a current offset architecture. The designed circuits are based on the TSMC 0.35μm and 0.18μm processes, which are provided by national chip implementation center, nation

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Chu, Hsing-Chien, and 朱行健. "A Low-Power Current-Mode Dual-Slope CMOS Temperature Sensor." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/k542g7.

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博士<br>國立交通大學<br>電機工程學系<br>105<br>This dissertation contributes a new possibility for temperature sensing and presents a feasible prototype. A novel low-cost low-power dual-slope CMOS temperature sensor is presented in this dissertation. It employs a proportional-to-absolute-temperature (PTAT) current generator, which operates in the sub-threshold region, and a novel temperature-insensitive CMOS inverter, replacing a traditional voltage comparator for power saving and compactness, to create PTAT pulse width. A binary counter is then used to quantize the pulse to a digital output value. It achie

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Walvekar, Trupti. "Ring Oscillator Based Temperature Sensor." Thesis, 2012. https://etd.iisc.ac.in/handle/2005/2541.

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The temperature sensor design discussed in this thesis, is meant mainly to monitor temperature at power outlets. Current variations in power cords have a direct impact on the surrounding temperature. Sensing these variations ,enables us to take necessary measures to prevent any hazards due to temperature rise. Thus, for this application we require a sensor with a moderate temperature error (_10C) over a sensing range of -200C to 1500C. Low power consumption and simple digitizing scheme alleviate measurement errors due to self heating effects of the sensor. A current starved inverter based r

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Walvekar, Trupti. "Ring Oscillator Based Temperature Sensor." Thesis, 2012. http://etd.iisc.ernet.in/handle/2005/2541.

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The temperature sensor design discussed in this thesis, is meant mainly to monitor temperature at power outlets. Current variations in power cords have a direct impact on the surrounding temperature. Sensing these variations ,enables us to take necessary measures to prevent any hazards due to temperature rise. Thus, for this application we require a sensor with a moderate temperature error (_10C) over a sensing range of -200C to 1500C. Low power consumption and simple digitizing scheme alleviate measurement errors due to self heating effects of the sensor. A current starved inverter based ri

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Lin, Yi-Fan, and 林逸凡. "A New CMOS Smart Temperature Sensor with Low Sensitivity to Process Variation." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/78315837768148754131.

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碩士<br>元智大學<br>電機工程學系<br>97<br>A new smart CMOS temperature sensor is proposed for thermal management of VLSI system in this thesis. The proposed temperature sensor consists of a diode-connected MOS transistor, a simple temperature independent current stage and amplifier stage. The proposed temperature sensor employs a diode-connected MOS transistor to be sensor device and uses a new simple temperature independent current stage and amplifier stage to achieve high linearity and high output swing, and then uses difference between two sensing transistors to reduce process variation. The prototype

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Yang, Cheng-Ruei, and 楊承叡. "All-Digital Smart Temperature Sensor with Self-Calibration in 65nm CMOS Technology." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/15974672678561674761.

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碩士<br>國立中正大學<br>資訊工程所<br>98<br>In this thesis, we make a discussion and architecture improvements that focus on the design of all-digital smart temperature sensor. Additionally, the method of auto-calibration has been joined into our design to make the sensor to be automatic in calibrating operations. And so we call it an all-digital smart temperature sensor with auto-calibration. This thesis will introduce the critical components in smart temperature sensor and analysis the advantages or disadvantages of each architecture. Besides, we talk about the conventional calibration method of smart te

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Wei, Yuang-Hung, and 魏源宏. "A Dual –Mode Operation Synchronous CMOS Switching Buck Regulator with Temperature Sensor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/33766003498224950459.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>99<br>In recent years, the smart touch mobile phones, Global Positioning System（GPS）satellite navigation unit, driving recorder, high definition（HD）digital camera, Light-Emitting Diode（LED）lighting, and related electronic products have emerged. It makes the system end of product development companies extensively use microprocessors, digital signal processing（DSP）, and multi-module systems to increase product functionality and meet product demand. Hence, it increases demand for the power of their respective function module. The control of system and system design al

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Chen, Sih-Chieh, and 陳思絜. "A CMOS-MEMS Capacitive Humidity Sensor with Vertically Integrated Resistive Temperature Detector." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/ksz3a6.

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碩士<br>國立清華大學<br>動力機械工程學系<br>105<br>This study demonstrates the vertically integrated environment sensor with a capacitive relative humidity sensor (RH sensor) and a resistive temperature detector (RTD) using the TSMC 0.18μm 1P6M CMOS process and simple in-house post-CMOS processes. Features of this study are: (1) multiple sensing unit could be integrated and achieved in one chip; (2) fast response humidity sensor are realized based on capacitive sensing principle; (3) simple post-CMOS processes using metal wet etching, reactive ion etching, pneumatic dispensing of polyimide (PI), curing proces

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Hou, Zong-You, and 侯宗佑. "CMOS-based High-precision Temperature and Current Sensor for Battery Management Systems." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/tm829w.

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博士<br>國立中山大學<br>電機工程學系研究所<br>107<br>Voltage, current, and temperature are three important parameters for estimating the state of charge (SOC). Therefore, high-precision sensors for these 3 physical measures play a key role in a battery management system (BMS). This dissertation presents a high-precision temperature sensor and a current sensor using CMOS technologies for BMS to achieve accurate SOC estimation in the future. In Chapter 2, a high-precision CMOS temperature sensor with an auto-selective design is developed to overcome the narrow temperature range problem of a single thermistor tem

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Matthews, Richard Henry Edwin. "Towards a Unified Theory of Sensor Pattern Noise: An analysis of dark current, lens effects, and temperature bias in CMOS image sensors." Thesis, 2019. http://hdl.handle.net/2440/119974.

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Matching images to a discrete camera is of significance in forensic investigation. In the case of digital images, forensic matching is possible through the use of sensor noise present within every image. There exist misconceptions, however, around how this noise reacts under variables such as temperature and the use of different lens systems. This study aims to formulate a revised model of the additive noise for an image sensor to determine if a new method for matching images to sensors could be created which uses fewer resources than the existing methods, and takes into account a wider range

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Chen, Chien-Nan, and 陳建男. "A New CMOS Temperature Sensor with 10-Bit SAR ADC for RFID Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/68964044874926573162.

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碩士<br>元智大學<br>電機工程學系<br>99<br>A new CMOS temperature sensor with battery assistance is proposed for passive UHF RFID applications in this thesis. The proposed temperature sensor employs the diode-connected NMOS FET transistor to sense VGS voltage variation in different temperature. The sensing result will converse into the corresponding digital value by a low power successive approximation register ADC which has the resolution of 7.2 bits. In addition, we also designed an interface circuit to make the communication and synchronization for RFID integration. The prototype circuit are designed fr

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Hung, Shao-Hang, and 洪紹航. "Wide Dynamic Range & Temperature Compensated Gain CMOS Image Sensor in Automotive Applications." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/79758643381673651122.

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碩士<br>國立交通大學<br>電機學院IC設計產業專班<br>95<br>Image Sensor has been popularly used in our daily life. Whether digital camera or digital video camera in CCD or CMOS process implementation, the tendency toward fully electronic-image equipment engulf the old generation of silver film. Thus the original photography problems like limited of high contrast, vibration issue, there would be the other problems due to electronic devices` characteristic, such as thermal noise can strongly affect the quality of picture. These problems are still hot topics to be overcome, and lots of specialized image sensors have

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Hong, Ping-Hsiu, and 洪立秉修. "Monolithic Integration of CMOS Humidity and Pressure/Temperature Sensor for Environment Sensing Hub." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/6qu56j.

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碩士<br>國立清華大學<br>動力機械工程學系<br>106<br>This research presents a monolithically integrated environment sensing hub utilizing the TSMC CMOS platform. This study first focuses on the structure design of humidity sensors, with the intention of improving the sensors’ response time and sensitivity, then in order to fully utilize the CMOS platform, a pressure sensor and a temperature detector are integrated monolithically on the same chip, the core concept of this research is to fabricate all four sensors at once, without the fabrication process inteferring each other. Experimental measurements will be o

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Chen, Teng-Cheng, and 陳登政. "A 1.8V 53.4uW CMOS Temperature Sensor with -55°C to 125°C Temperature range and 0.25°C Resolution." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/97999175978543506643.

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碩士<br>國立交通大學<br>電信工程研究所<br>99<br>A low power and high precision temperature sensing unit is an essential unit in environmental and biomedical temperature sensing application. With the development of Integrated-Circuit(IC) technology, the traditional temperature sensor is not suitable for integrating into low power VLSI circuit. Therefore, how to implement a low voltage, low power temperature sensor which can be easily integrated with advanced SOC is an important research. In this thesis, we implemented a 1.8V 53.4uW CMOS temperature sensor with -55°C to 125°C temperature range and 0.25°C resol

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Yeh, Chi-Ching, and 葉奇青. "Study on Fabrication of Temperature Sensor and Operational Amplifier Using CMOS Standard Process Technology." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/35516275600460181996.

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碩士<br>華梵大學<br>機電工程研究所<br>88<br>This thesis studys CMOS compatible integrated temperature sensors and operational amplifier. In the experiments, The device were fabricated using UMC 0.5μm 2P2M or TSMC 0.6μm 1P3M process. First, we fabricated four different temperature sensor, Which include polysilicon、p+ diffusion、n+ diffusion、n-well. From the experimental measurements, The n-well material has better temperature coefficient of resistance (TCR). Express resistance follow temperature is large in liner change range. Has better sensitivity in temperature. Material of temperature sensor

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Lee, Wei-Cheng, and 李惟正. "A Smart CMOS Temperature Sensor for On-line Thermal Monitoring with Accurate Digital Output." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/17375087474931740248.

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碩士<br>國立清華大學<br>電機工程學系<br>95<br>Due to the advance in CMOS technology and design complexity, more power is dissipated in smaller die area, thus the thermal density of modern VLSI systems is becoming a critical issue. High die temperature can not only degrade circuit performance but also leads to thermal runaway. Therefore, continuous monitoring of die temperature is crucial. In this thesis, a CMOS smart temperature sensor without conventional ADC or bandgap reference is proposed for thermal management of VLSI system. The accuracy is within ±0.8 °C over the temperature range of 0 °C to 125 °C a

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Guo, Zong-Yi, and 郭宗億. "Design and Realization of All-Digital CMOS Time-Domain Smart Temperature Sensor with Offset Cancellation." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/79815169499260554723.

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碩士<br>國立高雄第一科技大學<br>電子工程研究所<br>105<br>This study presents a CMOS (Complementary Metal-Oxide Semiconductor) time-domain smart temperature sensor (TDSTS) with offset cancellation for accuracy improvement, structure simplification, and cost saving. This study used NOT gates in series to realize a temperature-sensing delay line (TDDL) to perform the temperature-to-time conversion first. Then, an all-digital pulse-shrinking unit (ADPSU) was proposed to convert the time into the corresponding digital output. This enabled the proposed sensor can be implemented using all-digital design. Additionally,

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Kliko, Roman Vladimirovitch. "Design of a Digital Temperature Sensor based on Thermal Diffusivity in a Nanoscale CMOS Technology." Master's thesis, 2016. http://hdl.handle.net/10362/82837.

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Temperature sensors are widely used in microprocessors to monitor on-chip temperature gradients and hot-spots, which are known to negatively impact reliability. Such sensors should be small to facilitate floor planning, fast to track millisecond thermal transients, and easy to trim to reduce the associated costs. Recently, it has been shown that thermal diffusivity (TD) sensors can meet these requirements. These sensors operate by digitalizing the temperature-dependent delay associated with the diffusion of heat pulses through an electro-thermal filter (ETF), which, in standard CMOS, can be re

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Lai, Chih-Hsien, та 賴志賢. "A Simple in-situ High-Sensitivity Temperature Sensor and Constant Voltage Generator IC in 0.35μm CMOS". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/46197145223901097427.

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Li, Po-Yu, and 李柏郁. "Design of a CMOS Temperature Sensor Based on a Low-Noise Second-Order 1-bit CT Delta-Sigma Modulator." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/azjk59.

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Huang, Sheng-Min, and 黃聖閔. "Study of inhibition ability of antibodies for white spot syndrome virus(wssv) using CMOS-based microcantilever chip integrate temperature sensor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/27122986129993731021.

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碩士<br>國立臺灣海洋大學<br>機械與機電工程學系<br>103<br>Taiwan is one of the major area of White Spot Syndrome Virus(WSSV) epidemic Southeast Asia, but there are no useful drugs or vaccines to against WSSV. Nowadays, the studies of medicines usually have been done by laboratory scale instruments, the results of experiments are correct, but this process wastes too much time and resources, nay, the results are not able to be observed immediately. As a result, we hope that this research will provide a bio-chip with high sensitivity and real-time detection, and it could record infection process of WSSV immediately.

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Gomes, Rúben Daniel Gouveia. "Sensor de temperatura digital para aplicação em sensores de imagem." Master's thesis, 2018. http://hdl.handle.net/10400.13/2107.

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Nesta dissertação de mestrado foi desenvolvido um sensor de temperatura com saída digital implementado em circuito integrado, para utilização em sensores de imagem CMOS. O projeto foi executado utilizando a tecnologia DongBu 130nm. Este projeto permite obter uma saída digital relacionada com a temperatura de uma forma linear sendo possível saber a temperatura na qual o sistema se encontra inserido. O sensor de temperatura digital assenta em duas partes principais: o sensor de temperatura com saída analógica e um conversor de analógico para digital. Assim foi iniciado o projeto com o estudo do

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Weng, Ming-Chan, and 翁明鏟. "Design of CMOS Temperature Sensors." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/52734077603755335871.

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博士<br>國立交通大學<br>電子工程系<br>91<br>Three CMOS temperature sensors with digital output are presented. In order to achieve the requirements of low cost, low power and high accuracy of the temperature sensors, design and implementation issues are comprehensively investigated in this thesis. An on-chip temperature sensor uses the base-emitter voltage of the parasitic substrate bipolar transistor to measure its die temperature. A remote temperature sensor utilizes a diode-connected external bipolar transistor to measure the remote temperature. The same design principles are applied to both s

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Liu, Te-Hsuan, and 劉德璿. "High Precision CMOS Temperature Sensors with Voltage Output." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/03371568869733165146.

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碩士<br>崑山科技大學<br>電子工程研究所<br>99<br>Temperature sensors have gradually become the important building block of the circuits for biomedical applications and electronic products. The temperature sensing can enhance the precision of biological molecular detection and the stability of the performance of electronic circuits. Nowaday, because of the advanced development of semiconductor process technology, temperature sensors have successfully been integrated in circuits and systems. In the thesis, at first, a CMOS temperature sensor with voltatge output is presented. This circuit is based on a bandgap

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Chowdhury, Golam Rasul. "Integrated temperature sensors in deep sub-micron CMOS technologies." Thesis, 2014. http://hdl.handle.net/2152/24999.

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Integrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across d

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