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Artykuły w czasopismach na temat „Electronic Properties - Exotic Transition Metal Oxides”

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Data publikacji: 7 września 2023

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1

Hattori, Azusa N., Ai I. Osaka, Ken Hattori, et al. "Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure." Crystals 10, no. 8 (2020): 631. http://dx.doi.org/10.3390/cryst10080631.

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Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitude. Since the discovery of phase separation during transition processes, many researchers have been trying to capture a nanoscale electronic domain and investigate its exotic properties. To understand the exotic properties of the nanoscale electronic domain, we studied the MIT and IMT properties for the VO2 electronic domains confined into a 20 nm l

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2

ALONSO, J. A., M. J. MARTÍNEZ-LOPE, C. DE LA CALLE, et al. "HIGH-PRESSURE SYNTHESIS AND CHARACTERIZATION OF NEW METASTABLE OXIDES." Functional Materials Letters 04, no. 04 (2011): 333–36. http://dx.doi.org/10.1142/s1793604711002123.

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Many transition-metal oxides in elevated valence states [e.g. Mn(V), Co(IV), Ni(III), Cu(III) ] present a metastable character and, given the difficulty of their synthesis, have been relatively little studied. However, they are very interesting materials presenting strong electronic correlations that are bound to exotic properties such as superconductivity, metal behavior, metal–insulator transitions or colossal magnetoresistance. The metastability of these compounds requires special synthesis conditions such as the application of high pressure. In the last years, we have prepared and investig

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3

Merckling, Clement, Islam Ahmed, Tsang Hsuan Tsang, Moloud Kaviani, Jan Genoe, and Stefan De Gendt. "(Invited) Integrated Perovskites Oxides on Silicon: From Optical to Quantum Applications." ECS Meeting Abstracts MA2022-01, no. 19 (2022): 1060. http://dx.doi.org/10.1149/ma2022-01191060mtgabs.

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With the slowing down of Moore’s law, related to conventional scaling of integrated circuits, alternative technologies will require research effort for pushing the limits of new generations of electronic or photonic devices. Perovskite oxides with the ABO3 chemical formula have a very wide range of interesting intrinsic properties such as metal-insulator transition, ferroelectricity, pyroelectricity, piezoelectricity, ferromagnetic and superconductivity. For the integration of such oxides, it is of great interest to combine their properties with traditional electronic, memory and optical devic

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4

Rodenbücher, Christian, and Kristof Szot. "Electronic Phenomena of Transition Metal Oxides." Crystals 11, no. 3 (2021): 256. http://dx.doi.org/10.3390/cryst11030256.

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Transition metal oxides with ABO3 or BO2 structures have become one of the major research fields in solid state science, as they exhibit an impressive variety of unusual and exotic phenomena with potential for their exploitation in real-world applications [...]

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Ansari, Lida, Paul Hurley, and Farzan Gity. "Two-Dimensional Gallium Selenide (GaSe) Material for Nanoelectronics Application." ECS Meeting Abstracts MA2022-01, no. 12 (2022): 868. http://dx.doi.org/10.1149/ma2022-0112868mtgabs.

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As silicon-based transistors have approached their physical limits, it is urgent to explore alternative materials with a suitable bandgap and high mobility for next generation electronic logic devices. Two‐dimensional (2D) materials have attracted significant attention in the last few years due to their potential exotic transport physics and technological applications in various fields, such as a significant device downscaling for high intensity integration. Recently, a variety of 2D materials have been explored, including graphene [1] and transition metal dichalcogenides (TMDs), e.g., MoS2 [2

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6

Ulstrup, Søren, Jyoti Katoch, Roland J. Koch, et al. "Spatially Resolved Electronic Properties of Single-Layer WS2 on Transition Metal Oxides." ACS Nano 10, no. 11 (2016): 10058–67. http://dx.doi.org/10.1021/acsnano.6b04914.

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Du, Yongping, and Xiangang Wan. "The novel electronic and magnetic properties in 5d transition metal oxides system." Computational Materials Science 112 (February 2016): 416–27. http://dx.doi.org/10.1016/j.commatsci.2015.09.036.

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Wang, Hongxia, Kelvin H. L. Zhang, Jan P. Hofmann, Victor A. de la Peña O'Shea, and Freddy E. Oropeza. "The electronic structure of transition metal oxides for oxygen evolution reaction." Journal of Materials Chemistry A 9, no. 35 (2021): 19465–88. http://dx.doi.org/10.1039/d1ta03732c.

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In this review article, we summarise the key electronic features of transition metal oxides that govern their OER catalytic properties, and how such electronic descriptors are applied for OER electrocatalysts design.

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9

Chan, Henry, Kiran Sasikumar, Srilok Srinivasan, Mathew Cherukara, Badri Narayanan, and Subramanian K. R. S. Sankaranarayanan. "Machine learning a bond order potential model to study thermal transport in WSe2 nanostructures." Nanoscale 11, no. 21 (2019): 10381–92. http://dx.doi.org/10.1039/c9nr02873k.

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Nanostructures of transition metal di-chalcogenides (TMDCs) exhibit exotic thermal, chemical and electronic properties, enabling diverse applications from thermoelectrics and catalysis to nanoelectronics.

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10

EVARESTOV, R. A., A. KALINKO, A. KUZMIN, M. LOSEV, and J. PURANS. "FIRST-PRINCIPLES LCAO CALCULATIONS ON 5D TRANSITION METAL OXIDES: ELECTRONIC AND PHONON PROPERTIES." Integrated Ferroelectrics 108, no. 1 (2009): 1–10. http://dx.doi.org/10.1080/10584580903323990.

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11

Wakabayashi, Yusuke. "Near-surface structural study of transition metal oxides to understand their electronic properties." Journal of Physics: Condensed Matter 23, no. 48 (2011): 483001. http://dx.doi.org/10.1088/0953-8984/23/48/483001.

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12

Maignan, A., W. Kobayashi, S. Hébert, et al. "Transition-Metal Oxides with Triangular Lattices: Generation of New Magnetic and Electronic Properties." Inorganic Chemistry 47, no. 19 (2008): 8553–61. http://dx.doi.org/10.1021/ic8006926.

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13

Khomskii, D. "Charge and orbital ordering in transition metal oxides." Journal de Physique IV 12, no. 9 (2002): 257. http://dx.doi.org/10.1051/jp4:20020408.

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Transition metal oxides with strongly correlated d-electrons show an astonishing variety of properties. This is largely determined by an interplay of different degrees of freedom: charge, spin, orbital, lattice ones. Often there appear in them various superstructures. In this talk I will consider different types of superstructures in transition metal oxides, especially charge and orbital ordering, willdiscuss the main mechanisms leading to their formation and consider specific examples of superstructures in manganites, cobaltites and in some frustrated systems. Relative role of purely electron

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14

Kan, Er Jun. "Electronic Structures in LaTiO₃/LaAlO₃ Multilayers." Advanced Materials Research 771 (September 2013): 7–11. http://dx.doi.org/10.4028/www.scientific.net/amr.771.7.

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We demonstrate the existence of a hidden degree of freedom controlling the orbitalordering in [LaTiO1/[LaAlO5 multilayers with comprehensive density-functional theorycalculations. The orbitals of two-dimensional (2D) 3d1state of Ti atoms in the multilayers alwayscontain large dxy components, which is unexpected from crystal field theory (first Jahn-Tellerdistortion). The competition between first and second Jahn-Teller distortion induces variousmagnetic properties. Thus, transition-metal oxides/non-transition-metal oxides multilayers mayprovide an important direction to manipulate the spin and

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15

Bergo, P., W. M. Pontuschka, J. M. Prison, C.C. Motta, and J. R. Martinelli. "Dielectric properties of barium phosphate glasses doped with transition metal oxides." Journal of Non-Crystalline Solids 348 (November 2004): 84–89. http://dx.doi.org/10.1016/j.jnoncrysol.2004.08.130.

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16

Niu, Xu, Bin-Bin Chen, Ni Zhong, Ping-Hua Xiang, and Chun-Gang Duan. "Topological Hall effect in SrRuO₃ thin films and heterostructures." Journal of Physics: Condensed Matter 34, no. 24 (2022): 244001. http://dx.doi.org/10.1088/1361-648x/ac60d0.

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Abstract Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4d and 5d oxides, exotic phases can be realized with the involvement of strong spin–orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3 thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a

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17

Merkle, Rotraut, Maximilian F. Hoedl, Giulia Raimondi, Reihaneh Zohourian, and Joachim Maier. "Oxides with Mixed Protonic and Electronic Conductivity." Annual Review of Materials Research 51, no. 1 (2021): 461–93. http://dx.doi.org/10.1146/annurev-matsci-091819-010219.

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Oxides with mixed protonic and p-type electronic conductivity (and typically containing also mobile oxygen vacancies) are important functional materials, e.g., for oxygen electrodes in protonic ceramic electrochemical cells or for permeation membranes. Owing to the presence of three carriers, their defect chemical behavior is complex. Deviations from ideal behavior (defect interactions) have to be taken into account, which are related to the partially covalent character of the transition metal–oxygen bonds. Compared to acceptor-doped Ba(Zr,Ce)O3− z electrolytes, perovskites with redox-active t

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18

Chudnovskii, F. A., A. L. Pergament, D. A. Schaefer, and G. B. Stefanovich. "Effect of Laser Irradiation on the Properties of Transition Metal Oxides." Journal of Solid State Chemistry 118, no. 2 (1995): 417–18. http://dx.doi.org/10.1006/jssc.1995.1363.

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19

Yin, Zongyou, Moshe Tordjman, Youngtack Lee, Alon Vardi, Rafi Kalish, and Jesús A. del Alamo. "Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond." Science Advances 4, no. 9 (2018): eaau0480. http://dx.doi.org/10.1126/sciadv.aau0480.

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High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 1014 cm−2) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transis

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20

Mitin, A. V. "Manifestations of quasi-one-dimensional correlations in the electronic properties of transition-metal oxides." Bulletin of the Russian Academy of Sciences: Physics 72, no. 10 (2008): 1339–42. http://dx.doi.org/10.3103/s1062873808100092.

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21

Khan, M. N., M. A. Hassan, and C. A. Hogarth. "The electronic and optical properties of germanium tellurite glasses containing various transition metal oxides." Physica Status Solidi (a) 106, no. 1 (1988): 191–200. http://dx.doi.org/10.1002/pssa.2211060123.

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22

OOMI, G., S. KAJI, Y. TOMIOKA, and Y. TOKURA. "HIGH PRESSURE STUDY OF NOVEL ELECTRONIC PROPERTIES IN Sr2Fe(W1-xMox)O6 NEAR METAL-INSULATOR TRANSITION." International Journal of Modern Physics B 21, no. 18n19 (2007): 3279–84. http://dx.doi.org/10.1142/s0217979207044378.

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Electrical resistivities of double perovskite oxides Sr 2 Fe ( W 1-x Mo x) O 6 have been measured at high pressure and high magnetic field to elucidate the transport properties of these materials. It is found that the main mechanism of the transport in the semiconducting phase is variable range hopping conduction and the insulating properties are suppressed by high pressure to show a crossover to metallic state. The magnetoresistances of these oxides are revealed to decrease at high pressure above 1 GPa. Extremely large Grüneisen parameters are found near x = 0.2, where the metal-insulator tra

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23

Tsuchiya, Toshio, Mitsuya Otonari, and Takashi Ariyama. "Internal friction and electrical properties in phosphate glasses containing transition metal oxides." Journal of Non-Crystalline Solids 95-96 (December 1987): 1001–8. http://dx.doi.org/10.1016/s0022-3093(87)80709-3.

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24

Zheng, Ming, Pengfei Guan, Yaping Qi, and Litong Guo. "Straintronic effect on electronic transport and metal–insulator transition in correlated metal films by electric field." Applied Physics Letters 120, no. 16 (2022): 161603. http://dx.doi.org/10.1063/5.0082879.

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Tuning the electronic and magnetic properties of strongly correlated oxides by exerting an electric field is of great significance for understanding the mechanisms of striking quantum phenomena and delivering low-dissipation electronic devices. Here, we demonstrate a linear suppression of electrical resistivity for correlated metallic SrVO3 epitaxial films in a continuous and reversible fashion through the converse piezoelectric response-generated linear lateral compressive strain of ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 substrates. By precisely tailoring the polarization domain configuration

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25

Terny, S., and M. A. Frechero. "Understanding how the mixed alkaline-earth effect tunes transition metal oxides-tellurite glasses properties." Physica B: Condensed Matter 583 (April 2020): 412054. http://dx.doi.org/10.1016/j.physb.2020.412054.

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26

Rueff, J.-P., A. Mattila, J. Badro, G. Vankó, and A. Shukla. "Electronic properties of transition-metal oxides under high pressure revealed by x-ray emission spectroscopy." Journal of Physics: Condensed Matter 17, no. 11 (2005): S717—S726. http://dx.doi.org/10.1088/0953-8984/17/11/001.

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Takano, M., R. Kanno, and T. Takeda. "A chemical contribution to the search for novel electronic properties in transition metal oxides: LiNiO2." Materials Science and Engineering: B 63, no. 1-2 (1999): 6–10. http://dx.doi.org/10.1016/s0921-5107(99)00044-6.

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Assadi, M. Hussein N., and Yasuteru Shigeta. "The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO2 compounds (TM = Ti–Ni & Zr–Pd)." RSC Advances 8, no. 25 (2018): 13842–49. http://dx.doi.org/10.1039/c8ra00576a.

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Dong, M. D., J. Y. Shen, C. Y. Hong, et al. "Modulation of the NiO_x bandgap by controlling oxygen stoichiometry." Journal of Applied Physics 132, no. 17 (2022): 173901. http://dx.doi.org/10.1063/5.0109659.

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Transition metal oxides are a class of functional materials widely used in optoelectronics, spintronics, and memory technology. The oxygen stoichiometry of these oxides plays a vital role in determining their electronic, optical, and thermal properties. Post-growth annealing in ozone has shown to be effective in modifying these properties. Here, we choose NiO, an antiferromagnetic Mott insulator in perfect stoichiometry, as an example to show that its stoichiometry can be tuned continuously in a broad range by the control of the oxidation power during growth or a post-growth topotactic reducti

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Bachir Bouiadjra, Oussama, Ghouti Merad, Jean Marc Raulot, Hayet Si Abdelkader, and Claude Esling. "Structural, Electronic and Mechanical Properties of Perovskite Oxides LaMO₃ (M = Mn, Ni) Compounds in the High and Low Symmetric Phases by First Principle Calculation." Materials Science Forum 941 (December 2018): 2300–2305. http://dx.doi.org/10.4028/www.scientific.net/msf.941.2300.

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The widely investigated perovskite oxides has attracted for a long time a great interest on the physical properties, in their bulk structures as well as the heterostructures components. The Lanthanum transition metal oxides LaMO3(M= Transition metal) is part of, due to their potential use in advanced technology (including superconductivity, magnetoresistance, ionic conductivity, and a multitude of dielectric properties). Despite the broad exploration of the physical properties, we found a considerable lack in the investigation of the mechanical properties of the LaMO3compounds. By applying the

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31

Chiromawa, Idris Muhammad, Amiruddin Shaari, Razif Razali, Summanuwa Timothy Ahams, and Mikailu Abdullahi. "Ab initio Investigation of the Structure and Electronic Properties of Normal Spinel Fe2SiO4." Malaysian Journal of Fundamental and Applied Sciences 17, no. 2 (2021): 195–201. http://dx.doi.org/10.11113/mjfas.v17n2.2018.

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Transition metal spinel oxides have recently been predicted to create efficient transparent conducting oxides for optoelectronic devices. These compounds can be easily tuned by doping or defect to adapt their electronic or magnetic properties. However, their cation distribution is very complex and band structures are still subject to controversy. We propose a complete density functional theory investigation of fayalite (Fe2SiO4) spinel, using Generalized Gradient Approximation (GGA) and Local Density Approximation (LDA) in order to explain the electronic and structural properties of this mater

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32

Piyanzina, I. I., Yu V. Lysogorskiy, D. A. Tayurskii, and R. F. Mamin. "Electronic Properties of a Two-Dimensional Electron Gas at the Interface between Transition Metal Complex Oxides." Bulletin of the Russian Academy of Sciences: Physics 82, no. 3 (2018): 234–37. http://dx.doi.org/10.3103/s1062873818030188.

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Pandey, Sumeet C., Xu Xu, Izaak Williamson, Eric B. Nelson, and Lan Li. "Electronic and vibrational properties of transition metal-oxides: Comparison of GGA, GGA + U, and hybrid approaches." Chemical Physics Letters 669 (February 2017): 1–8. http://dx.doi.org/10.1016/j.cplett.2016.12.005.

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Oh, Sunyoung, You Kyung Kim, Chan Ho Jung, Won Hui Doh, and Jeong Young Park. "Effect of the metal–support interaction on the activity and selectivity of methanol oxidation over Au supported on mesoporous oxides." Chemical Communications 54, no. 59 (2018): 8174–77. http://dx.doi.org/10.1039/c8cc04295k.

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To elucidate the factors affecting the catalytic properties of supported Au catalysts on the metal oxide support we investigated Au NPs deposited on crystallized mesoporous transition-metal oxides (m-oxides: Co<sub>3</sub>O<sub>4</sub>, NiO, and α-Fe<sub>2</sub>O<sub>3</sub>) prepared using the nanocasting method.

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Yao, Yu, Dandan Sang, Liangrui Zou, Qinglin Wang, and Cailong Liu. "A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices." Nanomaterials 11, no. 8 (2021): 2136. http://dx.doi.org/10.3390/nano11082136.

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Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photoch

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Zhang, Kai, Kai Du, Hao Liu, et al. "Manipulating electronic phase separation in strongly correlated oxides with an ordered array of antidots." Proceedings of the National Academy of Sciences 112, no. 31 (2015): 9558–62. http://dx.doi.org/10.1073/pnas.1512326112.

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The interesting transport and magnetic properties in manganites depend sensitively on the nucleation and growth of electronic phase-separated domains. By fabricating antidot arrays in La0.325Pr0.3Ca0.375MnO3 (LPCMO) epitaxial thin films, we create ordered arrays of micrometer-sized ferromagnetic metallic (FMM) rings in the LPCMO films that lead to dramatically increased metal–insulator transition temperatures and reduced resistances. The FMM rings emerge from the edges of the antidots where the lattice symmetry is broken. Based on our Monte Carlo simulation, these FMM rings assist the nucleati

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Ulpe, Anna C., Katharina C. L. Bauerfeind, and Thomas Bredow. "Influence of Spin State and Cation Distribution on Stability and Electronic Properties of Ternary Transition-Metal Oxides." ACS Omega 4, no. 2 (2019): 4138–46. http://dx.doi.org/10.1021/acsomega.8b03254.

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Demazeau, Gerard. "Stabilization of high transition metal valencies and correlations with electronic properties of oxides with the perovskite structure." Phase Transitions 58, no. 1-3 (1996): 43–56. http://dx.doi.org/10.1080/01411599608242393.

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Gaggero, Elisa, Paola Calza, Erik Cerrato, and Maria Cristina Paganini. "Cerium-, Europium- and Erbium-Modified ZnO and ZrO2 for Photocatalytic Water Treatment Applications: A Review." Catalysts 11, no. 12 (2021): 1520. http://dx.doi.org/10.3390/catal11121520.

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In the last decades photocatalysis has become one of the most employed technologies for the implementation of the so-called Advanced Oxidation Processes (AOPs) for the removal of harmful pollutants from wastewaters. The materials identified as the best photocatalysts are transition metal oxides, in which the band structure allows charge carrier separation upon solar irradiation. The photoinduced charge carrier can thus cause oxidative and reductive redox reactions at the surface, inducing the formation of the radical species able to initiate the AOPs. Despite the great advantages of this proce

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40

Wang, Zhikai, Xiangtao Lin, Taoyong Liu, et al. "Thermal, chemical properties and structure evolution of medical neutral glasses modified by transition metal oxides." Journal of Non-Crystalline Solids 595 (November 2022): 121835. http://dx.doi.org/10.1016/j.jnoncrysol.2022.121835.

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Huang, Lujun, Alex Krasnok, Andrea Alú, Yiling Yu, Dragomir Neshev, and Andrey E. Miroshnichenko. "Enhanced light–matter interaction in two-dimensional transition metal dichalcogenides." Reports on Progress in Physics 85, no. 4 (2022): 046401. http://dx.doi.org/10.1088/1361-6633/ac45f9.

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Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy

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42

Romanenko, A. I., G. E. Chebanova, Tingting Chen, Wenbin Su, and Hongchao Wang. "Review of the thermoelectric properties of layered oxides and chalcogenides." Journal of Physics D: Applied Physics 55, no. 14 (2021): 143001. http://dx.doi.org/10.1088/1361-6463/ac3ce6.

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Abstract The current state of investigation on thermoelectric properties of layered chalcogenides and oxides is considered. The relationship between the quasi-two-dimensionality of electronic transport properties and thermoelectric properties is confirmed. A decrease in the dimension of electron transport from three-dimensional to quasi-two-dimensional in materials with a layered structure increases the thermopower with a slight change in electrical conductivity. The bismuth tellurides, bismuth selenides and its alloys are currently one of the outstanding state of the art bulk thermoelectric m

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Becker, K. D. "Spectroscopicin situstudies of defect-dependent properties of transition metal oxides Defects, diffusion, and reaction kinetics." Philosophical Magazine A 68, no. 4 (1993): 767–86. http://dx.doi.org/10.1080/01418619308213996.

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Salman, S. M., S. N. Salama, and Ebrahim A. Mahdy. "Contribution of some transition metal oxides to crystallization and electro-thermal properties of glass-ceramics." Ceramics International 46, no. 9 (2020): 13724–31. http://dx.doi.org/10.1016/j.ceramint.2020.02.160.

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Ometto, Felipe B., Emilia A. Carbonio, Érico Teixeira-Neto, and Hebe M. Villullas. "Changes induced by transition metal oxides in Pt nanoparticles unveil the effects of electronic properties on oxygen reduction activity." Journal of Materials Chemistry A 7, no. 5 (2019): 2075–86. http://dx.doi.org/10.1039/c8ta10642h.

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Andriotis, Antonis N., and Madhu Menon. "Electronic and magnetic properties of the CuO4- and Co2CuO10-complexes in diluted magnetic semiconductors and transition metal oxides." Materials Research Express 6, no. 8 (2019): 086108. http://dx.doi.org/10.1088/2053-1591/ab1620.

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Hanzig, Florian, Josef Veselý, Mykhaylo Motylenko, et al. "Composition profiles across MIMs for resistive switching studied by EDS and EELS." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C1456. http://dx.doi.org/10.1107/s205327331408543x.

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Resistive switching in MIM (metal-insulator-metal) stacks is an effect that enables a promising data storage technology which is able to overcome the size limitations of conventional non-volatile memories. The resistive switching effect was already demonstrated for several binary as well as ternary transition metal oxides (TiO2, NiO, SrTiO3, Nb2O5) [1,2]. The current models of the switching mechanisms suggest the important role of defects like oxygen vacancies [3]. Here, we report on the local structural and electronic properties of transition metal oxides embedded in MIM stacks that were obta

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Navarrete, Eric, and Eduard Llobet. "Synthesis of p-n Heterojunctions via Aerosol Assisted Chemical Vapor Deposition to Enhance the Gas Sensing Properties of Tungsten Trioxide Nanowires: A Mini-Review." Journal of Nanoscience and Nanotechnology 21, no. 4 (2021): 2462–71. http://dx.doi.org/10.1166/jnn.2021.19105.

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Here we discuss the aerosol-assisted synthesis of p–n heterojunction metal oxides and we report their gas sensing properties via a short review of the latest results achieved. In particular, we show that the decoration of one-dimensional tungsten oxide (n-type) with nanoparticles of different p-type oxides from transition metals such as Ni, Co or Ir enables achieving a chemical and electronic sensitization of the resulting hybrid metal oxide materials. This leads to remarkable differences in responsiveness to gases, showing that, to some extent, a selective detection of some major pollutant ga

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Cinthia, Arumainayagam Jemmy, Ratnavelu Rajeswarapalanichamy, and Kombiah Iyakutti. "First Principles Study of Electronic Structure, Magnetic, and Mechanical Properties of Transition Metal Monoxides TMO(TM=Co and Ni)." Zeitschrift für Naturforschung A 70, no. 10 (2015): 797–804. http://dx.doi.org/10.1515/zna-2015-0216.

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AbstractThe ground-state properties, electronic structure, magnetic and mechanical properties of cobalt oxide (CoO) and nickel oxide (NiO) are investigated using generalised gradient approximation parameterised by Perdew–Burke–Ernzerhof (GGA-PBE) and GGA-PBE+U formalisms. These oxides are found to be stable in the antiferromagnetic (AFM) state at normal pressure. The computed lattice parameters are in agreement with the experimental and other theoretical works. Pressure-induced magnetic transition from AFM to ferromagnetic (FM) state is predicted in NiO at a pressure of 84 GPa. Both these comp

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Pergament, A. L., V. P. Malinenko, L. A. Aleshina, E. L. Kazakova, and N. A. Kuldin. "Electrical Switching in Thin Film Structures Based on Molybdenum Oxides." Journal of Experimental Physics 2014 (September 18, 2014): 1–6. http://dx.doi.org/10.1155/2014/951297.

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We report on the experimental study of electrical instabilities in thin film structures on the basis of molybdenum oxides. Thin films of molybdenum oxide are obtained by thermal vacuum evaporation and anodic oxidation. The results of X-ray structural analysis, investigation of optical and electrical properties, are presented. It is shown that the initial vacuum-deposited oxide represents amorphous MoO3. In the MOM (metal-oxide-metal) structures with Mo oxide films obtained by the two methods, the effect of electrical switching with an S-shaped current-voltage characteristic is found. We put fo

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