Gotowe bibliografie tematyczne / Epitaxial Deposition

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Gotowa bibliografia na temat „Epitaxial Deposition”

Autor: Grafiati

Data publikacji: 6 września 2023

Data aktualizacji: 25 lipca 2025

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Artykuły w czasopismach na temat "Epitaxial Deposition"

Wang, Wenliang, Yulin Zheng, Yuan Li, et al. "Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates." CrystEngComm 19, no. 48 (2017): 7307–15. http://dx.doi.org/10.1039/c7ce01803g.

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High-quality AlN epitaxial films have been epitaxially grown on Cu(111) substrates by pulsed laser deposition (PLD) through effectively controlling the interfacial reactions between AlN epitaxial films and Cu substrates.

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Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.

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The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the gr

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Duan, Chun Yan, Bin Ai, Jian Jun Lai, Chao Liu, You Jun Deng, and Hui Shen. "APCVD Deposition of Si Film on SiO₂ Patterned Si (111) Substrates for Solar Cells." Advanced Materials Research 295-297 (July 2011): 1211–16. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1211.

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We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with c

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M C Ávila, Renan, Roney C da Silva, and Rogério J Prado. "Preparation of epitaxial BiFeO3 thin films on Si(001) substrates by pulsed electron deposition." Physics & Astronomy International Journal 7, no. 2 (2023): 77–81. http://dx.doi.org/10.15406/paij.202307.00288.

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To achieve the epitaxial thin films deposition, it is necessary to use properly oriented substrates, with or without buffer layers, matching the lattice parameters of the epitaxial thin film we want to grow. In this work, the deposition of epitaxial Bi2SiO5(200) and BiFeO3(001) thin films on Si(001) substrates by pulsed electron deposition (PED) technique is reported without special substrate preparation. The deposition of epitaxial BSO(200) and T-BFO(001) directly onto Si(001) substrates during a single target deposition process is relevant and presents enormous potential to reduce costs and

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Wijaranakula, W., P. M. Burke, L. Forbes, and J. H. Matlock. "Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon." Journal of Materials Research 1, no. 5 (1986): 698–704. http://dx.doi.org/10.1557/jmr.1986.0698.

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Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.

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Chung, Jun Ki, Won Jeong Kim, Sung Gap Lee, and Cheol Jin Kim. "Growth and Characterization of BaZrO₃ Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate." Key Engineering Materials 336-338 (April 2007): 715–18. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.715.

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Superconducting YBa2Cu3O7-δ(YBCO) films were grown on MgO single crystalline substrates using a BaZrO3 (BZO) buffer layer deposited by a pulsed laser deposition (PLD). Deposition condition has been optimized to obtain good epitaxial BZO film followed by deposition of YBCO superconducting films. The crystallinity and microstructure of epitaxial YBCO/ BZO/ MgO (00l) films were investigated by a two-dimensional x-ray diffraction and a field emission scanning electron microscope. The in-plane (φ-scan) measurements for the BZO films (200 ~ 500 nm thick) grown on MgO substrates revealed a narrow ful

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Zhang, Jiming, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk, and John Steinbeck. "Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films." Journal of Materials Research 9, no. 6 (1994): 1333–36. http://dx.doi.org/10.1557/jmr.1994.1333.

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MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperatur

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Pedersen, Henrik. "(Invited) Atomic Layer Deposition as the Enabler for the Meta Stable Semiconductor InN and Its Alloys." ECS Meeting Abstracts MA2023-02, no. 32 (2023): 1569. http://dx.doi.org/10.1149/ma2023-02321569mtgabs.

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Indium nitride (InN) is highly interesting for high-frequency and high-speed electronics given the remarkably high electron mobility in InN. The development of InN based electronics is hampered by the difficulty in depositing high quality thin films. The InN crystal breaks down to indium metal and nitrogen gas at about 500 °C which limits the deposition temperature, making conventional chemical vapor deposition (CVD) poorly suited for InN. Atomic Layer Deposition (ALD) is a low temperature, time-resolved form of CVD where the precursor gases are pulsed sequentially, separated by inert gas. Thi

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Duan, Ying Wen. "Epitaxial Pd-Doped LaFeO₃ Films Grown on (100) SrTiO₃ by Pulsed Laser Deposition." Advanced Materials Research 936 (June 2014): 282–86. http://dx.doi.org/10.4028/www.scientific.net/amr.936.282.

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Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surfa

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Lin, Yunhao, Meijuan Yang, Wenliang Wang, Zhiting Lin, and Guoqiang Li. "Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template." RSC Advances 6, no. 88 (2016): 84794–800. http://dx.doi.org/10.1039/c6ra16842f.

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Rozprawy doktorskie na temat "Epitaxial Deposition"

Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition." Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-164106.

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This thesis deals with the synthesis and characterization of Ge-Te-Sb (GST) thin films. The films were deposited using a Pulsed Laser Deposition (PLD) method and mainly characterized with XRD, SEM, AFM and TEM. For amorphous and polycrystalline films, un-etched Si(100) was used. The amorphous films showed a similar crystallization behavior as films deposited with sputtering and evaporation techniques. When depositing GST on un-etched Si(100) substrates at elevated substrate temperatures (130-240°C), polycrystalline but highly textured films were obtained. The preferred growth orientation was

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Ryu, Yung-ryel. "Study of epitaxial ZnSe films synthesized by pulsed deposition /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901275.

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Ye, Liang. "Rapid thermal CVD of epitaxial silicon from dichlorosilane source." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333849.

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Woo, Juhyun. "Growth of epitaxial zirconium carbide layers using pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013064.

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Vasilic, Rastko. "Epitaxial growth by monolayer restricted galvanic displacement." Diss., Online access via UMI:, 2006.

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Stallcup, Richard E. "Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films." Thesis, University of North Texas, 2000. https://digital.library.unt.edu/ark:/67531/metadc2446/.

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Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 To

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Zaia, Gilberto Vitor. "Epitaxial growth of Si and 3C-SiC by chemical vapor deposition." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966630424.

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Nutariya, Jeerapat. "Epitaxial thin film growth of Pt assisted by underpotential deposition phenomena." Thesis, University of Bristol, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616569.

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Fuel cells as green and sustainable energy sources are at the heart of future Hydrogen Economy. Current research is focused on creating highly active, stable and low content Pt catalysts to improve fuel cell performance up to standards suitable for commercialization. The development of bimetallic Pt structures is the most promising route for achieving this goal. Besides the lower-noble metal content, combination of Pt with other metal at the nano-scale .can result in enhancement of catalytic activity due to the combination of geometric and electronic effects. The main aim of this work is the d

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Gower, Aaron E. (Aaron Elwood). "Integrated model-based run-to-run uniformity control for epitaxial silicon deposition." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/16787.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.<br>Also available online at the MIT Theses Online homepage <http://thesis.mit.edu/><br>Includes bibliographical references (p. 241-247).<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under

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Yamaguchi, Iwao. "Preparation of epitaxial oxide films on sapphire substrates by metal organic deposition." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/124565.

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Książki na temat "Epitaxial Deposition"

J, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. National Aeronautics and Space Administration, 1995.

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Fischer, Roland A. Precursor chemistry of advanced materials: CVD, ALD and nanoparticles. Springer, 2010.

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Texas Engineering Extension Service StaffTEEX. Epitaxial Deposition. TEEX/Technology and Economic Development, 2001.

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The 2006-2011 World Outlook for Thin-Layer Epitaxial Growth Deposition Semiconductor Wafer Processing Equipment. Icon Group International, Inc., 2005.

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Parker, Philip M. The 2007-2012 World Outlook for Thin-Layer Epitaxial Growth Deposition Semiconductor Wafer Processing Equipment. ICON Group International, Inc., 2006.

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Hogberg, Hans. Low-Temperature Deposition of Epitaxial Transition Metal Carbide Films and Superlattices Using C60 As Carbon Source. Uppsala Universitet, 1999.

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Takagi, Toshinori. Ionized-Cluster Beam Deposition and Epitaxy. Elsevier Science & Technology Books, 1989.

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Ionized-cluster beam deposition and epitaxy. Noyes Publications, 1988.

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Części książek na temat "Epitaxial Deposition"

Lange, Fred. "Epitaxial Films." In Chemical Solution Deposition of Functional Oxide Thin Films. Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_16.

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Craciun, V., and R. K. Singh. "Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films." In Atomistic Aspects of Epitaxial Growth. Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_40.

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Sammelselg, V., J. Karlis, A. Kikas, J. Aarik, H. Mändar, and T. Uustare. "Nanoscopic Study of Zirconia Films Grown by Atomic Layer Deposition." In Atomistic Aspects of Epitaxial Growth. Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_46.

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Nishino, S., K. Takahashi, Y. Kojima, and J. Saraie. "Epitaxial Growth of 6H-SiC by Chemical Vapor Deposition." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84402-7_54.

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Bhat, Ishwara B. "Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition." In Springer Handbook of Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_28.

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Boer, W. B. "Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe." In Advances in Rapid Thermal and Integrated Processing. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-015-8711-2_16.

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Pardo, J. A., J. Santiso, C. Solis, G. Garcia, and A. Figueras. "Pulsed Lased Deposition of MIEC Sr4Fe6O13±δ Epitaxial Thin Films." In Mixed Ionic Electronic Conducting Perovskites for Advanced Energy Systems. Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2349-1_25.

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Arthur, John R. "Physical and Chemical Methods for Thin-Film Deposition and Epitaxial Growth." In Specimen Handling, Preparation, and Treatments in Surface Characterization. Springer US, 2002. http://dx.doi.org/10.1007/0-306-46913-8_8.

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Ponczak, Brian H., James D. Oliver, Soon Cho, and Gary W. Rubloff. "In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.121.

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Yamada, Isao. "Film Deposition with Cluster Beams: An Alternate Path to Epitaxial, Crystalline Films." In Physics and Chemistry of Finite Systems: From Clusters to Crystals. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-017-2645-0_164.

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Streszczenia konferencji na temat "Epitaxial Deposition"

Mehta, Rutvik J., Yuejing Wang, Frank Cerio, et al. "Ion Beam Deposition of Epitaxial 0001 In-Plane and Out-of-Plane Low-Resistivity Ruthenium for Interconnect Applications." In 2024 IEEE International Interconnect Technology Conference (IITC). IEEE, 2024. http://dx.doi.org/10.1109/iitc61274.2024.10732764.

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Wang, Zhan Jie, Li Jun Yan, Hiroyuki Kokawa, and Ryutaro Maeda. "In situ deposition of epitaxial PZT films by pulsed laser deposition." In Smart Materials, Nano-, and Micro-Smart Systems, edited by Alan R. Wilson. SPIE, 2004. http://dx.doi.org/10.1117/12.581399.

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Muenchausen, Ross E. "Pulsed laser deposition: prospects for commercial deposition of epitaxial thin films." In High-Power Laser Ablation, edited by Claude R. Phipps. SPIE, 1998. http://dx.doi.org/10.1117/12.321616.

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Susto, Gian Antonio, Alessandro Beghi, and Cristina De Luca. "A Predictive Maintenance System for Silicon Epitaxial Deposition." In 2011 IEEE International Conference on Automation Science and Engineering (CASE 2011). IEEE, 2011. http://dx.doi.org/10.1109/case.2011.6042421.

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Yuehu Wang, Yuming Zhang, Yimen Zhang, Renxu Jia, and Da Chen. "SiC epitaxial layers grown by chemical vapor deposition." In 2008 8th International Workshop on Junction Technology (IWJT '08). IEEE, 2008. http://dx.doi.org/10.1109/iwjt.2008.4540053.

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Yihwan Kim, Yi-Chiau Huang, Errol Sanchez, and Schubert Chu. "Thermal chemical vapor deposition of epitaxial germanium tin alloys." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874699.

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Darwish, Abdalla, Simeon Wilson, and Brent Koplitz. "Pulsed laser deposition of epitaxial BaFeO 3 thin films." In SPIE Photonic Devices + Applications, edited by Shizhuo Yin and Ruyan Guo. SPIE, 2011. http://dx.doi.org/10.1117/12.914083.

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Eden, J. G., V. Tavitian, and C. J. Kiely. "Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition." In 1988 Los Angeles Symposium--O-E/LASE '88, edited by Peter P. Chenausky, Roland A. Sauerbrey, and James H. Tillotson. SPIE, 1988. http://dx.doi.org/10.1117/12.944386.

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Alexandrov, Dimiter, Jonny Tot, Robert Dubreuil, et al. "Low temperature epitaxial deposition of GaN on LTCC substrates." In 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA). IEEE, 2017. http://dx.doi.org/10.1109/wipda.2017.8170501.

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Sorokin, Michael V., Ishaq Ahmad, Anatole N. Khodan, and Samson O. Aisida. "Pulsed laser deposition of epitaxial films: : phase-field description." In 2022 19th International Bhurban Conference on Applied Sciences and Technology (IBCAST). IEEE, 2022. http://dx.doi.org/10.1109/ibcast54850.2022.9990074.

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Raporty organizacyjne na temat "Epitaxial Deposition"

Hamblen, David G., David B. Fenner, Peter A. Rosenthal, Joseph Cosgrove, and Pang-Jen Kung. Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada360082.

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Taga, N., M. Maekawa, Y. Shigesato, I. Yasui, and T. E. Haynes. Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/257414.

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Davis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer, and E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Defense Technical Information Center, 1997. http://dx.doi.org/10.21236/ada338206.

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Davis, R. F., H. H. Lamb, and S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada353949.

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Bailey, William. MBE Deposition of Epitaxial Fe1-xVx Films for Low-Loss Ghz Devices; Atomic-Scale Engineering of Magnetic Dynamics. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada459301.

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Newman, A., P. S. Krishnaprasad, S. Ponczak, and P. Brabant. Modeling and Model Reduction for Control and Optimization of Epitaxial Growth in a Commercial Rapid Thermal Chemical Vapor Deposition Reactor. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada441006.

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