Artykuły w czasopismach: „Ferroelectrics”

1

Zhang, Xinhao, and Bo Peng. "The twisted two-dimensional ferroelectrics." Journal of Semiconductors 44, no. 1 (January 1, 2023): 011002. http://dx.doi.org/10.1088/1674-4926/44/1/011002.

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Abstract Since the beginning of research on two-dimensional (2D) materials, a few numbers of 2D ferroelectric materials have been predicted or experimentally confirmed, but 2D ferroelectrics as necessary functional materials are greatly important in developing future electronic devices. Recent breakthroughs in 2D ferroelectric materials are impressive, and the physical and structural properties of twisted 2D ferroelectrics, a new type of ferroelectric structure by rotating alternating monolayers to form an angle with each other, have attracted widespread interest and discussion. Here, we review the latest research on twisted 2D ferroelectrics, including Bernal-stacked bilayer graphene/BN, bilayer boron nitride, and transition metal dichalcogenides. Finally, we prospect the development of twisted 2D ferroelectrics and discuss the challenges and future of 2D ferroelectric materials.

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WANG, JIE, and TONG-YI ZHANG. "PHASE FIELD STUDY OF POLARIZATION VORTEX IN FERROELECTRIC NANOSTRUCTURES." Journal of Advanced Dielectrics 02, no. 02 (April 2012): 1241002. http://dx.doi.org/10.1142/s2010135x12410020.

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Ferroelectric nanostructures are attracting considerable attention due to their unusual physical properties and potential applications in memory devices and nanoelectromechanical systems. It has been found that low-dimensional ferroelectrics, such as ferroelectric nanodots, ferroelectric nanotubes and ferroelectric thin films, exhibit polarization vortices or vortex-like domain structures due to the strong depolarization field and the size effect. The polarization vortex is regarded as a new toroidal order in ferroelectrics which is different from the rectilinear order of polarization. The vortex states of polarization are bistable and can be switched from one state to the other, which holds the potential application in next generation ferroelectric memories. This paper briefly reviews the recent work on the phase field studies of polarization vortex in ferroelectric nanostructures. The homogeneous bulk thermodynamics of ferroelectrics is first introduced based on the Landau–Devonshire theory. To describe the inhomogeneous polarization distribution in ferroelectrics, the phase field model including interface thermodynamics is then presented in the form of time-dependent Ginzburg–Landau equations.

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MA, WENHUI. "FLEXOELECTRIC EFFECT IN FERROELECTRICS." Functional Materials Letters 01, no. 03 (December 2008): 235–38. http://dx.doi.org/10.1142/s179360470800037x.

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Flexoelectric effect and its influence on the application of multifunctional ferroelectrics have been investigated. Theory of flexoelectric coupling has indicated that mechanical strain gradient can impact polarization in a way analogous to electric field. Experimentally, magnitudes of the flexoelectric coefficients have been measured in ferroelectric, incipient ferroelectric and relaxor ferroelectric perovskites. Present data of flexoelectricity suggests that such unconventional electromechanical coupling could make unique contribution to properly engineered ferroelectric thin films and nanostructures. Flexoelectric effect is expected to intensify at small dimensions and get large enough at nanoscale to significantly impact phase transition and functional response in ferroelectrics.

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Huyan, Huaixun, Linze Li, Christopher Addiego, Wenpei Gao, and Xiaoqing Pan. "Structures and electronic properties of domain walls in BiFeO3 thin films." National Science Review 6, no. 4 (July 1, 2019): 669–83. http://dx.doi.org/10.1093/nsr/nwz101.

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Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.

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Ke, Changming, Jiawei Huang, and Shi Liu. "Two-dimensional ferroelectric metal for electrocatalysis." Materials Horizons 8, no. 12 (2021): 3387–93. http://dx.doi.org/10.1039/d1mh01556g.

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Two dimensional ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal. These 2D ferroelectrics can serve as electrically-tunable, high-quality switchable electrocatalysts.

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Kimura, Tsuyoshi. "Current Progress of Research on Magnetically-induced Ferroelectrics." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C6. http://dx.doi.org/10.1107/s2053273314099938.

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Among several different types of magnetoelectric multiferroics, "magnetically-induced ferroelectrics" in which ferroelectricity is induced by complex spin orders, such as spiral orders, exhibit giant direct magnetoelectric effects, i.e., remarkable changes in electric polarization in response to a magnetic field. Not a few spin-driven ferroelectrics showing the magnetoelectric effects have been found in the past decade.[1] However, their induced ferroelectric polarization is much smaller than that in conventional ferroelectrics and mostly develops only at temperatures much lower than room temperature. Thus, the quest for spin-driven ferroelectrics with room temperature operation and/or robust ferroelectric polarization is still a major challenge in magnetoelectric multiferroics research. In this presentation, I will begin with introducing the background of research on magnetically-induced ferroelectrics, and present the following current progress. Recently, some hexaferrites have been found to show direct magnetoelectric effects at room temperature and relatively low magnetic fields.[2] Furthermore these hexferrites show inverse magnetoelectric effects, that is, induction of magnetization by applying electric fields, at room temperature. The results represented an important step toward practical applications using the magnetoelectric effect in spin-driven ferroelectrics. This presentation introduces magnetism and magnetoelectricity of several types of hexaferrites which show magnetoelectric effect at temperatures above room temperature. In addition, I will also introduce our recent work on magnetoelectric perovskite manganites with large magnetically-induced ferroelectric polarization which is comparable to that in conventional ferroelectrics. This work has been done in collaboration with T. Aoyam, K. Haruki, K. Okumura, A. Miyake, K. Shimizu, and S. Hirose.

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Liu, Meiying, Jingjing Liang, Yadong Tian, and Zhiliang Liu. "Post-synthetic modification within MOFs: a valuable strategy for modulating their ferroelectric performance." CrystEngComm 24, no. 4 (2022): 724–37. http://dx.doi.org/10.1039/d1ce01567b.

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It is a great route designing new MOF ferroelectrics to enrich the scope of ferroelectrics or improving the ferroelectric performance to enhance the opportunity of applications through the strategy of post-synthetic modification (PSM).

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Gao, Liang, Ben-Lin Hu, Linping Wang, Jinwei Cao, Ri He, Fengyuan Zhang, Zhiming Wang, Wuhong Xue, Huali Yang, and Run-Wei Li. "Intrinsically elastic polymer ferroelectric by precise slight cross-linking." Science 381, no. 6657 (August 4, 2023): 540–44. http://dx.doi.org/10.1126/science.adh2509.

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Ferroelectrics are an integral component of the modern world and are of importance in electrics, electronics, and biomedicine. However, their usage in emerging wearable electronics is limited by inelastic deformation. We developed intrinsically elastic ferroelectrics by combining ferroelectric response and elastic resilience into one material by slight cross-linking of plastic ferroelectric polymers. The precise slight cross-linking can realize the complex balance between crystallinity and resilience. Thus, we obtained an elastic ferroelectric with a stable ferroelectric response under mechanical deformation up to 70% strain. This elastic ferroelectric exerts potentials in applications related to wearable electronics, such as elastic ferroelectric sensors, information storage, and energy transduction.

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PARK, Min Hyuk. "Renaissance of Ferroelectric Memories: Can They Be a Game-changer?" Physics and High Technology 30, no. 9 (September 30, 2021): 16–23. http://dx.doi.org/10.3938/phit.30.028.

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Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.

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Chen, Zibin, Fei Li, Qianwei Huang, Fei Liu, Feifei Wang, Simon P. Ringer, Haosu Luo, Shujun Zhang, Long-Qing Chen, and Xiaozhou Liao. "Giant tuning of ferroelectricity in single crystals by thickness engineering." Science Advances 6, no. 42 (October 2020): eabc7156. http://dx.doi.org/10.1126/sciadv.abc7156.

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Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.

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11

Ricinschi, Dan, and Eisuke Tokumitsu. "Multiagent Strategic Interaction Based on a Game Theoretical Approach to Polarization Reversal in Ferroelectric Capacitors." Journal of Advanced Computational Intelligence and Intelligent Informatics 15, no. 7 (September 20, 2011): 806–12. http://dx.doi.org/10.20965/jaciii.2011.p0806.

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Ferroelectric materials are currently integrated in nonvolatile memory devices, whose principle is to allocate 0 and 1 logic bits to opposite orientations of the spontaneous polarization vector that are permitted by crystal symmetry. Typically made of randomly oriented grains, ferroelectrics tend to split into domains, according to the experienced sequence of electric fields, thermal treatments and any structural imperfections. On this background, we attempt to formulate new principles of exploiting such structural and operational degrees of freedom for unconventional applications of ferroelectrics. In this paper, we envision a new paradigm of ferroelectrics as processors of multiagent strategic interactions, employing unconventional mathematical tools (normally used for optimizing the decision-making process of rational human subjects) for analyzing ferroelectric capacitors’ response to combinatorial pulses. Specifically, we quantify the way microscopic assembly laws of the ferroelectric material mediate the amount of polarization reversed by two electrical pulses using the mathematical theory of games, applied to a strategic interaction between two hypothetical players impersonated by the two pulses. Such socially meaningful implementations of applied mathematics concepts onto an oxide material substrate are worth to consider in view of artificial intelligence applications, adding ferroelectrics to the class of media able to perform unconventional computations.

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Pavlenko, Maksim A., Franco Di Rino, Leo Boron, Svitlana Kondovych, Anaïs Sené, Yuri A. Tikhonov, Anna G. Razumnaya, Valerii M. Vinokur, Marcelo Sepliarsky, and Igor A. Lukyanchuk. "Phase Diagram of a Strained Ferroelectric Nanowire." Crystals 12, no. 4 (March 24, 2022): 453. http://dx.doi.org/10.3390/cryst12040453.

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Ferroelectric materials manifest unique dielectric, ferroelastic, and piezoelectric properties. A targeted design of ferroelectrics at the nanoscale is not only of fundamental appeal but holds the highest potential for applications. Compared to two-dimensional nanostructures such as thin films and superlattices, one-dimensional ferroelectric nanowires are investigated to a much lesser extent. Here, we reveal a variety of the topological polarization states, particularly the vortex and helical chiral phases, in loaded ferroelectric nanowires, which enable us to complete the strain–temperature phase diagram of the one-dimensional ferroelectrics. These phases are of prime importance for optoelectronics and quantum communication technologies.

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13

YANG, Chan-Ho. "New Horizons for Ferroelectrics." Physics and High Technology 30, no. 9 (September 30, 2021): 24–30. http://dx.doi.org/10.3938/phit.30.029.

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Since the discovery of ferroelectricity in 1920, dielectric research has provided a variety of fundamental physics problems and sustainable applications. Advances in synthesis and nanoscale characterization, along with theoretical innovations, have made ferroelectrics more versatile. In this perspective, we discuss several directions for future ferroelectric research in terms of flexoelectricity, ferroelectric topology, and lattice defects, as well as cooperation with associated fields.

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Mikolajick, Thomas, Stefan Müller, Tony Schenk, Ekaterina Yurchuk, Stefan Slesazeck, Uwe Schröder, Stefan Flachowsky, et al. "Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors." Advances in Science and Technology 95 (October 2014): 136–45. http://dx.doi.org/10.4028/www.scientific.net/ast.95.136.

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Ferroelectrics are very interesting materials for nonvolatile data storage due to the fact that they deliver very low power programming operation combined with nonvolatile retention. For 60 years researchers have been inspired by these fascinating possibilities and have tried to build ferroelectric memory devices that can compete with mainstream technologies in their respective time. The progress of the current concepts is limited by the low compatibility of ferroelectrics like PZT with CMOS processing. Therefore, PZT or SBT based 1T1C ferroelectric memories are not scaling below 130 nm and 1T ferroelectric FETs based on the same materials are still struggling with low retention and very thick memory stacks. Hafnium oxide, a standard material in sub 45 nm CMOS, can show ferroelectric hysteresis with promising characteristics. By adding a few percent of silicon and annealing the films in a mechanically confined manner. Boescke et al. demonstrated ferroelectric hysteresis in hafnium oxide for the first time. Recently, a large number of dopants including Y, Al, Gd and Sr have been used to induce ferroelectricity in HfO2. This paper reviews the current status of hafnium oxide based ferroelectrics, its application to field effect transistors and puts this approach into a wider context of earlier developments in the field.

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Sidorkin, A. S., B. M. Darinskii, S. D. Milovidova, L. N. Korotkov, and G. S. Grigoryan. "Effect of the Component Interaction on the Phase Transitions and Dielectric Properties of Ferroelectric Composites." Кристаллография 68, no. 5 (September 1, 2023): 832–40. http://dx.doi.org/10.31857/s0023476123600519.

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The dielectric properties of ferroelectric composites and the specific features of the phase transitions occurring in them are discussed in comparison with the homogeneous ferroelectrics incorporated in the composites studied. The components incorporated into the dielectric matrix of ferroelectrics are considered to be triglycine sulfate, single crystals of potassium dihydrogen phosphate group, sodium nitrite, and perovskite-type materials. The factors changing the temperature range of polar phase existence in the ferroelectric composites under consideration are revealed and discussed. The results of the studies performed in this field are briefly reviewed. The work with the ferroelectric components incorporated into the aforementioned composites was performed in cooperation and under the guidance of L.A. Shuvalov.

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Wang, Yumeng. "Two-Dimensional Ferroelectric Materials: Synthesis, Characterization and Applications." Highlights in Science, Engineering and Technology 112 (August 20, 2024): 128–36. http://dx.doi.org/10.54097/rzvdx423.

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In recent years, the continuous advancements in microelectronics have driven the evolution of electronic devices towards miniaturization and integration. However, at the nanoscale level, surface and size effects become significant, imposing constraints on the use of conventional bulk ferroelectric materials in contemporary industry. As a result, in the field of materials research, two-dimensional (2D) ferroelectric materials with stable spontaneous polarization and minimal size effects have gained significant attention. These novel 2D ferroelectric materials have great potential for future nano-level ferroelectric applications, enabling high levels of device integration. To begin with, this paper divides 2D ferroelectric materials into two categories: intrinsic ferroelectrics and sliding ferroelectrics. It also discusses the features and current state of research on each of these categories. Next, typical 2D ferroelectric material preparation and characterization techniques are outlined. Additionally, 2D ferroelectric memory devices like ferroelectric diodes (FD), ferroelectric field effect transistors (FeFET), ferroelectric semiconductor field-effect transistors (FeSFET), and ferroelectric tunnel junctions (FTJ) are introduced. Finally, this review also presents expectations and potential challenges in the domain of 2D ferroelectric materials.

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Le, Minh-Tien, Phuong-Linh Do, Van-Tuan Le, Dang Thi Hong Hue, Van-Hai Dinh, Trong-Giang Nguyen, and Le Van Lich. "The origin of piezoelectric enhancement in compositionally graded ferroelectrics with sinusoidal variation." Applied Physics Letters 121, no. 16 (October 17, 2022): 162905. http://dx.doi.org/10.1063/5.0115482.

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The direct piezoelectric effect of [Formula: see text] Ba1− xSr xTiO3 graded ferroelectrics, whose compositions change in a sinusoidal form, is investigated via an extended phase-field method. The obtained results demonstrate that the piezoelectric coefficient can be significantly enhanced by controlling the amplitude of sinusoidal variation. The origin of piezoelectric enhancement is investigated by considering the formation of polarization domain structures and their behaviors under strain. Although a ferroelectric tetragonal phase or a paraelectric cubic phase primarily form in homogeneous Ba1− xSr xTiO3 ferroelectrics with a different content x, interestingly, an unusual ferroelectric monoclinic phase can be formed in compositionally graded ferroelectrics, giving rise to the coexistence of multiple phases. The monoclinic phase emerges as a result of the process that reduces built-in electric potential induced by a large gradient of polarization. In turn, the formation of the monoclinic phase gives rise to transient zones that make the polarization field more susceptible to external strains, thereby enhancing the piezoelectric response. We further demonstrate that the piezoelectric enhancement strongly depends on the volume fraction of the monoclinic phase in compositionally graded ferroelectrics, suggesting a route for the rational design of polarization domains and piezoelectric effects.

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Shang, Jing, Congxin Xia, Chun Tang, Chun Li, Yandong Ma, Yuantong Gu, and Liangzhi Kou. "Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP₂Se₆ monolayers." Nanoscale Horizons 6, no. 12 (2021): 971–78. http://dx.doi.org/10.1039/d1nh00402f.

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Two-dimensional ferroelectrics are core candidates for the development of next-generation non-volatile storage devices, which rely highly on ferroelectric stability and feasible approaches to manipulate the ferroelectric polarization and domain.

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Liu, Arthur Haozhe, Lisa Luhong Wang, and Lingping Kong. "Relaxor ferroelectrics materials under high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C979. http://dx.doi.org/10.1107/s2053273314090202.

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The rich phase diagrams from both relaxor and normal ferroelectrics under high pressure, stimulate us to study the pressure effect on the relaxor-PbTiO3 (PT) systems, to check whether the high pressure cubic structure will turn to low symmetry structure upon strong compression is the common behaviors for relaxor ferroelectrics materials. Furthermore, a complete phase diagram study of pressure-temperature effect on structure will allow us to explore the limitation on applications of relaxor-PT material devices under harsh environment involving in high pressure and high temperature conditions. Structure evolution and phase transition of several solid solution ferroelectrics, such as Pb(YbNb)O3-PT (PYN-PT), have been studied using in situ synchrotron X-ray diffraction (XRD) and Raman spectroscopy techniques under high pressure and high temperature conditions. XRD results show pressure induced phase transitions to a cubic phase, while the persistence of Raman spectroscopy in the full pressure range indicates its local distortion. A pressure-temperature phase diagram is further constructed to determine the stability region of the ferroelectric phase. The results provide useful guidance for the applications of this kind of high Curie temperature ferroelectric crystal under extreme conditions, and extra clue to synthesis of ferroelectric materials with tailored properties.

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Li, Peng-Fei, Wei-Qiang Liao, Yuan-Yuan Tang, Wencheng Qiao, Dewei Zhao, Yong Ai, Ye-Feng Yao, and Ren-Gen Xiong. "Organic enantiomeric high-Tcferroelectrics." Proceedings of the National Academy of Sciences 116, no. 13 (March 8, 2019): 5878–85. http://dx.doi.org/10.1073/pnas.1817866116.

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For nearly 100 y, homochiral ferroelectrics were basically multicomponent simple organic amine salts and metal coordination compounds. Single-component homochiral organic ferroelectric crystals with high-Curie temperature (Tc) phase transition were very rarely reported, although the first ferroelectric Rochelle salt discovered in 1920 is a homochiral metal coordination compound. Here, we report a pair of single-component organic enantiomorphic ferroelectrics, (R)-3-quinuclidinol and (S)-3-quinuclidinol, as well as the racemic mixture (Rac)-3-quinuclidinol. The homochiral (R)- and (S)-3-quinuclidinol crystallize in the enantiomorphic-polar point group 6 (C6) at room temperature, showing mirror-image relationships in vibrational circular dichroism spectra and crystal structure. Both enantiomers exhibit 622F6-type ferroelectric phase transition with as high as 400 K [above that of BaTiO3(Tc= 381 K)], showing very similar ferroelectricity and related properties, including sharp step-like dielectric anomaly from 5 to 17, high saturation polarization (7 μC/cm2), low coercive field (15 kV/cm), and identical ferroelectric domains. Their racemic mixture (Rac)-3-quinuclidinol, however, adopts a centrosymmetric point group 2/m(C2h), undergoing a nonferroelectric high-temperature phase transition. This finding reveals the enormous benefits of homochirality in designing high-Tcferroelectrics, and sheds light on exploring homochiral ferroelectrics with great application.

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Sayer, M., Z. Wu, C. V. R. Vasant Kumar, D. T. Amm, and E. M. Griswold. "Ferroelectrics for semiconductor devices." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1159–70. http://dx.doi.org/10.1139/p92-188.

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The integration of thin film ferroelectrics with silicon processing is being implemented for various types of devices. The technology is based on the sputtering or chemical deposition of lead-based perovskites such as lead zirconate titanate. Factors concerned with the integration of ferroelectric films with semiconductor processing are described. Major interests in Canada include nonvolatile ferroelectric random access memories for high-speed digital or long-term analog memory applications, high-density capacitors, electro-optic switches, and a wide range of sensors and actuators integrated into silicon.

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Wu, Ming, Yanan Xiao, Yu Yan, Yongbin Liu, Huaqiang Li, Jinghui Gao, Lisheng Zhong, and Xiaojie Lou. "Achieving Good Temperature Stability of Dielectric Constant by Constructing Composition Gradient in (Pb1−x,Lax)(Zr0.65,Ti0.35)O3 Multilayer Thin Films." Materials 15, no. 12 (June 10, 2022): 4123. http://dx.doi.org/10.3390/ma15124123.

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Ferroelectrics with a high dielectric constant are ideal materials for the fabrication of miniaturized and integrated electronic devices. However, the dielectric constant of ferroelectrics varies significantly with the change of temperature, which is detrimental to the working stability of electronic devices. This work demonstrates a new strategy to design a ferroelectric dielectric with a high temperature stability, that is, the design of a multilayer relaxor ferroelectric thin film with a composition gradient. As a result, the fabricated up-graded (Pb,La)(Zr0.65,Ti0.35)O3 multilayer thin film showed a superior temperature stability of the dielectric constant, with variation less than 7% in the temperature range from 30 °C to 200 °C, and more importantly, the variation was less than 2.5% in the temperature range from 75 °C to 200 °C. This work not only develops a dielectric material with superior temperature stability, but also demonstrates a promising method to enhance the temperature stability of ferroelectrics.

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Benedek, Nicole A., and Michael A. Hayward. "Hybrid Improper Ferroelectricity: A Theoretical, Computational, and Synthetic Perspective." Annual Review of Materials Research 52, no. 1 (July 1, 2022): 331–55. http://dx.doi.org/10.1146/annurev-matsci-080819-010313.

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We review the theoretical, computational, and synthetic literature on hybrid improper ferroelectricity in layered perovskite oxides. Different ferroelectric mechanisms are described and compared, and their elucidation using theory and first-principles calculations is discussed. We also highlight the connections between crystal chemistry and the physical mechanisms of ferroelectricity. The experimental literature on hybrid improper ferroelectrics is surveyed, with a particular emphasis on cation-ordered double perovskites, Ruddlesden–Popper and Dion–Jacobson phases. We discuss preparative routes for synthesizing hybrid improper ferroelectrics in all three families and the conditions under which different phases can be stabilized. Finally, we survey some synthetic opportunities for expanding the family of hybrid improper ferroelectrics.

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Rüdiger, Andreas, and Rainer Waser. "Nanoscale Ferroelectrics." Advances in Science and Technology 45 (October 2006): 2392–99. http://dx.doi.org/10.4028/www.scientific.net/ast.45.2392.

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Ferroelectrics are among the most advanced materials for non-volatile storage applications. Their two thermodynamically equivalent groundstates of spontaneous polarization can be toggled between by an external electric field. We present recent progress in the fabrication, registration, manipulation and characterization of nanoscale ferroelectrics. Chemical solution deposition is adapted to a pre-registration process by e-beam lithography to fabricate registered ferroelectric nanostructures below 100 nm width. A post-processing by chemical mechanical polishing either for embedded or free grains modifies the aspect ratio thus controlling the coercive field distribution of nanoferroelectrics. We also discuss some very recent findings of the complex interaction of field and piezoelectric tensor in a real piezoresponse force microscope. This method requires a comprehensive treatment of all contributions to tell apart extrinsic from intrinsic effects.

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Dong, Guohua, Suzhi Li, Mouteng Yao, Ziyao Zhou, Yong-Qiang Zhang, Xu Han, Zhenlin Luo, et al. "Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation." Science 366, no. 6464 (October 24, 2019): 475–79. http://dx.doi.org/10.1126/science.aay7221.

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Ferroelectrics are usually inflexible oxides that undergo brittle deformation. We synthesized freestanding single-crystalline ferroelectric barium titanate (BaTiO3) membranes with a damage-free lifting-off process. Our BaTiO3 membranes can undergo a ~180° folding during an in situ bending test, demonstrating a super-elasticity and ultraflexibility. We found that the origin of the super-elasticity was from the dynamic evolution of ferroelectric nanodomains. High stresses modulate the energy landscape markedly and allow the dipoles to rotate continuously between the a and c nanodomains. A continuous transition zone is formed to accommodate the variant strain and avoid high mismatch stress that usually causes fracture. The phenomenon should be possible in other ferroelectrics systems through domain engineering. The ultraflexible epitaxial ferroelectric membranes could enable many applications such as flexible sensors, memories, and electronic skins.

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Patrusheva, Tamara, Sergey Petrov, Ludmila Drozdova, and Aleksandr Shashurin. "FERROELECTRICS IN ACOUSTOELECTRONICS." VOLUME 39, VOLUME 39 (2021): 217. http://dx.doi.org/10.36336/akustika202139217.

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Аcoustoelectronics is one of the areas of acoustics, associated with the use of mechanical resonance effects and the piezoelectric effect, as well as the effect based on the interaction of electric fields with waves of acoustic stresses in a piezoelectric material. The main materials used in acoustoelectronics are ferroelectrics, which are mainly complex oxide materials. This article discusses the possibility of increasing the purity and homogeneity of ferroelectric materials, as well as softening the regimes of their synthesis using the solution extraction-pyrolytic method. It is shown that the synthesis temperatures of BaTiO3, SrTiO3, and Pb(Zr)TiO3 ferroelectric films are reduced to 550-600°C, and the synthesis time is down to 5-10 minutes. The dielectric constant and Curie temperature values correspond to the maximum characteristics for these materials. Thus, using the extraction-pyrolytic method we obtained suitable for use in acoustoelectronic technology ferroelectric films.

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Shao, Yu-Tsun, and Jian-Min Zuo. "Nanoscale symmetry fluctuations in ferroelectric barium titanate, BaTiO3." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 73, no. 4 (July 19, 2017): 708–14. http://dx.doi.org/10.1107/s2052520617008496.

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Crystal charge density is a ground-state electronic property. In ferroelectrics, charge is strongly influenced by lattice andvice versa, leading to a range of interesting temperature-dependent physical properties. However, experimental determination of charge in ferroelectrics is challenging because of the formation of ferroelectric domains. Demonstrated here is the scanning convergent-beam electron diffraction (SCBED) technique that can be simultaneously used for imaging ferroelectric domains and identifying crystal symmetry and its fluctuations. Results from SCBED confirm the acentric tetragonal, orthorhombic and rhombohedral symmetry for the ferroelectric phases of BaTiO3. However, the symmetry is not homogeneous; regions of a few tens of nanometres retaining almost perfect symmetry are interspersed in regions of lower symmetry. While the observed highest symmetry is consistent with the displacive model of ferroelectric phase transitions in BaTiO3, the observed nanoscale symmetry fluctuations are consistent with the predictions of the order–disorder phase-transition mechanism.

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Zhang, J. P., and J. S. Speck. "Identification of the polarized microregions in PLZT." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 556–57. http://dx.doi.org/10.1017/s0424820100170517.

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Relaxor ferroe lee tries are classified by broad or diffuse transitions from their high temperature paraelectric (non-polar phase) to their low temperature ferroelectric phase. This is in contrast to conventional ferroelectrics such as PbTiO3 that show discrete ferroelectric transitions characterized by Curie-Weiss behavior in the dielectric susceptibility near the Curie transition temperature Tc. For relaxor ferroelectrics, the transition has a breadth on the order of 100°C The polarized domains normally show complex nanoscale mottled contrast in either bright field or dark field, two-beam or systematic row scattering contrast images; as an example, this contrast is shown in Fig. 1. The nanoscale contrast appears to be intimately associated with the relaxor phase; however, the physical origins of the contrast remain unclear. It is known that in classical treatments of ferroelectrics, the polarization and strain are the primary order parameters for the paralelectric-ferroelectric phase transition. For classical first order ferroelectric transitions, such as in PbTiO3 or BaTiO3, there is a concurrently spontaneous polarization and strain. However, these order parameters need not be directly coupled, and it may be possible that through the relaxor transition, strain and polarization are uncoupled. In this experimental effort we will demonstrate techniques that separate strain contrast from structure factor contrast, the latter being associated with polarization or compositional fluctuations.

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Li, Yibao, Ye Du, Chao-Ran Huang, Hang Peng, Yu-Ling Zeng, Jun-Chao Liu, and Wei-Qiang Liao. "Homochiral anionic modification toward the chemical design of organic enantiomeric ferroelectrics." Chemical Communications 57, no. 42 (2021): 5171–74. http://dx.doi.org/10.1039/d1cc01675j.

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Wang, Jian-Jun, Bo Wang, and Long-Qing Chen. "Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method." Annual Review of Materials Research 49, no. 1 (July 2019): 127–52. http://dx.doi.org/10.1146/annurev-matsci-070218-121843.

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Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanostructured ferroelectrics and to understanding macroscopic and local domain switching under electrical and/or mechanical fields. We discuss the possibility of utilizing the structure-property relationship learned from phase-field simulations to design high-performance relaxor piezoelectrics and electrically tunable thermal conductivity. The review ends with a summary of and an outlook on the potential new applications of the phase-field method of ferroelectrics.

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Kho, Wonwoo, Hyunjoo Hwang, Jisoo Kim, Gyuil Park, and Seung-Eon Ahn. "Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures." Nanomaterials 13, no. 3 (January 21, 2023): 439. http://dx.doi.org/10.3390/nano13030439.

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Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materials because of their ability to maintain polarization, even when an external electric field is removed. Recently, it has been reported that HfO2 thin films compatible with complementary metal–oxide–semiconductor (CMOS) processes exhibit ferroelectricity even at a thickness of less than 10 nm. Among the ferroelectric-based memories, ferroelectric tunnel junctions are attracting attention as ideal devices for improving integration and miniaturization due to the advantages of a simple metal–ferroelectric–metal two-terminal structure and low ultra-low power driving through tunneling. The FTJs are driven by adjusting the tunneling electrical resistance through partial polarization switching. Theoretically and experimentally, a large memory window in a broad coercive field and/or read voltage is required to induce sophisticated partial-polarization switching. Notably, antiferroelectrics (like) have different switching properties than ferroelectrics, which are generally applied to ferroelectric tunnel junctions. The memory features of ferroelectric tunnel junctions are expected to be improved through a broad coercive field when the switching characteristics of the ferroelectric and antiferroelectric (like) are utilized concurrently. In this study, the implementation of multiresistance states was improved by driving the ferroelectric and antiferroelectric (like) devices in parallel. Additionally, by modulating the area ratio of ferroelectric and antiferroelectric (like), the memory window size was increased, and controllability was enhanced by increasing the switchable voltage region. In conclusion, we suggest that ferroelectric and antiferroelectric (like) parallel structures may overcome the limitations of the multiresistance state implementation of existing ferroelectrics.

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Lai, Keji. "Spontaneous polarization in van der Waals materials: Two-dimensional ferroelectrics and device applications." Journal of Applied Physics 132, no. 12 (September 28, 2022): 121102. http://dx.doi.org/10.1063/5.0116445.

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The research on two-dimensional (2D) van der Waals ferroelectrics has grown substantially in the last decade. These layered materials differ from conventional thin-film oxide ferroelectrics in that the surface and interface are free from dangling bonds. Some may also possess uncommon properties, such as bandgap tunability, mechanical flexibility, and high carrier mobility, which are desirable for applications in nanoelectronics and optoelectronics. This Tutorial starts by reviewing the theoretical tools in 2D ferroelectric studies, followed by discussing the material synthesis and sample characterization. Several prototypical electronic devices with innovative functionalities will be highlighted. Readers can use this article to obtain a basic understanding of the current status, challenges, and future prospects of 2D ferroelectric materials.

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Celano, Umberto, Mihaela Popovici, Karine Florent, Simone Lavizzari, Paola Favia, Kris Paulussen, Hugo Bender, Luca di Piazza, Jan Van Houdt, and Wilfried Vandervorst. "The flexoelectric effect in Al-doped hafnium oxide." Nanoscale 10, no. 18 (2018): 8471–76. http://dx.doi.org/10.1039/c8nr00618k.

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After the observation of ferroelectric HfO<sub>2</sub>, interest in ferroelectric-based nanoelectronics has been renewed. However, ferroelectrics also show coupling between the electrical polarization and the deformation gradient, defined as flexoelectricity. Here we show the flexoelectric effect in Al-doped hafnium oxide.

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Zhu, Zhongyunshen, Anton E. O. Persson, and Lars-Erik Wernersson. "Sensing single domains and individual defects in scaled ferroelectrics." Science Advances 9, no. 5 (February 3, 2023). http://dx.doi.org/10.1126/sciadv.ade7098.

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Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new individual defects activated by the ferroelectric switching. Our results show that ferroelectric films can be integrated on heterostructure devices and indicate that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Our approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics.

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Li, Bowen, Linping Wang, Liang Gao, Tianhua Xu, Dongyang Zhang, Fangzhou Li, Jike Lyu, et al. "Elastic relaxor ferroelectric by thiol‐ene click reaction." Angewandte Chemie International Edition, March 15, 2024. http://dx.doi.org/10.1002/anie.202400511.

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As ferroelectrics hold significance and application prospects in wearable devices, the elastification of ferroelectrics becomes more and more important. Nevertheless, achieving elastic ferroelectrics requires stringent synthesis conditions, while the elastification of relaxor ferroelectric materials remains unexplored, presenting an untapped potential for utilization in energy storage and actuation for wearable electronics. The thiol‐ene click reaction offers a mild and rapid reaction platform to prepare functional polymers. Therefore, we employed this approach to obtain an elastic relaxor ferroelectric by crosslinking an intramolecular carbon‐carbon double bonds (CF=CH) polymer matrix with multiple thiol groups via a thiol‐ene click reaction. The resulting elastic relaxor ferroelectric demonstrates pronounced relaxor‐type ferroelectric behaviour. This material exhibits low modulus, excellent resilience and fatigue resistance, maintaining a stable ferroelectric response even under strains of up to 70%. This study introduces a straightforward and efficient approach for the construction of elastic relaxor ferroelectrics, thereby expanding the application possibilities in wearable electronics.

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Li, Bowen, Linping Wang, Liang Gao, Tianhua Xu, Dongyang Zhang, Fangzhou Li, Jike Lyu, et al. "Elastic relaxor ferroelectric by thiol‐ene click reaction." Angewandte Chemie, March 15, 2024. http://dx.doi.org/10.1002/ange.202400511.

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As ferroelectrics hold significance and application prospects in wearable devices, the elastification of ferroelectrics becomes more and more important. Nevertheless, achieving elastic ferroelectrics requires stringent synthesis conditions, while the elastification of relaxor ferroelectric materials remains unexplored, presenting an untapped potential for utilization in energy storage and actuation for wearable electronics. The thiol‐ene click reaction offers a mild and rapid reaction platform to prepare functional polymers. Therefore, we employed this approach to obtain an elastic relaxor ferroelectric by crosslinking an intramolecular carbon‐carbon double bonds (CF=CH) polymer matrix with multiple thiol groups via a thiol‐ene click reaction. The resulting elastic relaxor ferroelectric demonstrates pronounced relaxor‐type ferroelectric behaviour. This material exhibits low modulus, excellent resilience and fatigue resistance, maintaining a stable ferroelectric response even under strains of up to 70%. This study introduces a straightforward and efficient approach for the construction of elastic relaxor ferroelectrics, thereby expanding the application possibilities in wearable electronics.

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37

Ma, Junpeng, Ming-Ding Li, Fang Wang, Chen Li, and Qun-Dong Shen. "Controllable tuning of ferroelectric switching via the lattice in crystallographically engineered molecular ferroelectrics." Journal of Applied Physics 133, no. 19 (May 16, 2023). http://dx.doi.org/10.1063/5.0148284.

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Reducing the switching energy and improving the switching speed of ferroelectrics remain an important goal in the pursuit of electronic devices with ultralow energy consumption and ultrafast response. Molecular ferroelectrics with concise dipole switching mechanism and facile structural tunability are a good platform for manipulating the ferroelectric domains. A methodology is demonstrated to manipulation of ferroelectric domain switching by tailor-made lattice parameters of molecular ferroelectrics, by following which, we succeeded in lowering the threshold electric field and improving the dynamics of ferroelectric switching. Our findings advance the fundamental understanding of microscopic mechanism and provide important insights in controllable tuning of ferroelectric domain switching.

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Yao, Jie, Zi‐Jie Feng, Zhenliang Hu, Yu‐An Xiong, Qiang Pan, Guo‐Wei Du, Hao‐Ran Ji, Tai‐Ting Sha, Junpeng Lu, and Yu‐Meng You. "2D Molecular Ferroelectric with Large Out‐of‐plane Polarization for In‐Memory Computing." Advanced Functional Materials, February 6, 2024. http://dx.doi.org/10.1002/adfm.202314790.

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Abstract2D ferroelectric materials with out‐of‐plane polarization are crucial for future nanoscale logic devices due to the increasing demand for energy‐efficient architectures in artificial intelligence. However, only a few 2D out‐of‐plane ferroelectrics are confirmed experimentally. As an important branch of ferroelectrics, organic–inorganic hybrid perovskite ferroelectrics show flexible structures, making them eligible for constructing multifunctional materials. Here, a 2D organic–inorganic hybrid perovskite ferroelectric (6‐BHA)2CdBr4 (6‐BHA is 6‐bromohexylamine) is designed, which crystallizes in polar point group Cc. It experiences the reversal phase transition at 317.8 K and possesses multiaxial ferroelectric properties. More interestingly, it exhibits a large spontaneous polarization value of 3.26 µC cm−2 in out‐of‐plane direction of the film compared with typical 2D ferroelectrics. Moreover, an inverter based on (6‐BHA)2CdBr4 is fabricated, which serves as a proof of concept for the feasibility for logic‐in‐memory devices. This work not only enriches the family of molecular ferroelectrics but also shows the potential to create the next generation of in‐memory computing devices, nanoelectronics devices, and ultra‐high‐density memories.

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Fan, Zhiwei, Jingyuan Qu, Tao Wang, Yan Wen, Ziwen An, Qitao Jiang, Wuhong Xue, Peng Zhou, and Xiaohong Xu. "Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications." Chinese Physics B, November 2, 2023. http://dx.doi.org/10.1088/1674-1056/ad08a4.

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Abstract Ferroelectrics are a kind of material with polar structure and the polarization direction can be inverted reversibly by applying electric field. They have attracted tremendous attention for their extensive applications in nonvolatile memory, sensors and neuromorphic computing. However, the conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional (2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, which holds greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtain impressive breakthroughs, showing overwhelming superiority. Herein, firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is prospected.

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Han, Wei, Yunwei Jia, Hao Wang, Shu Ping Lau, Thuc Hue Ly, and Jiong Zhao. "Phase transition of 2D van der Waals ferroelectrics." 2D Materials, May 12, 2025. https://doi.org/10.1088/2053-1583/add749.

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Abstract Two-dimensional (2D) van der Waals (vdW) ferroelectrics with switchable electric polarization offer exciting possibilities in the fields of physics, materials science, and device engineering. Beyond the conventional polarization-state regulation through electric-field, 2D ferroelectrics can offer important additional functionalities through isomeric phases, including paraelectric and antiferroelectric phases. In recent years, a variety of novel ferroelectric orders have been discovered in 2D materials, resulting from intra- or inter-layer symmetry-breaking. These hidden phases, exhibit attractive properties, and understanding their phase transition mechanisms and controlling the transitions has become a central topic in the field of 2D ferroelectrics. Furthermore, phase control is a primary step towards scalable synthesis of 2D ferroelectrics and device applications. Here, we highlight the diverse mechanisms of the phase transitions in 2D ferroelectrics, particularly intrinsic and extrinsic ferroelectrics. We also summarize different approaches and respective conditions for phase control. Moreover, the in situ experimental techniques for studying phase transitions, and the rationalized scalable synthetic methods of 2D ferroelectrics are discussed. Finally, rich functionalities, opportunities and emerging applications combining phase control and ferroelectricity in phase-change ferroelectric devices are envisioned, with the remaining challenges briefly discussed.

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Huang, Yulong, Jennifer L. Gottfried, Arpita Sarkar, Gengyi Zhang, Haiqing Lin, and Shenqiang Ren. "Proton-controlled molecular ionic ferroelectrics." Nature Communications 14, no. 1 (August 19, 2023). http://dx.doi.org/10.1038/s41467-023-40825-6.

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AbstractMolecular ferroelectric materials consist of organic and inorganic ions held together by hydrogen bonds, electrostatic forces, and van der Waals interactions. However, ionically tailored multifunctionality in molecular ferroelectrics has been a missing component despite of their peculiar stimuli-responsive structure and building blocks. Here we report molecular ionic ferroelectrics exhibiting the coexistence of room-temperature ionic conductivity (6.1 × 10−5 S/cm) and ferroelectricity, which triggers the ionic-coupled ferroelectric properties. Such ionic ferroelectrics with the absorbed water molecules further present the controlled tunability in polarization from 0.68 to 1.39 μC/cm2, thermal conductivity by 13% and electrical resistivity by 86% due to the proton transfer in an ionic lattice under external stimuli. These findings enlighten the development of molecular ionic ferroelectrics towards multifunctionality.

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42

Wang, Linping, Liang Gao, Xiaocui Rao, Fangzhou Li, Da Zu, Yunya Liu, and Benlin Hu. "High-Performance Elastic Ferroelectrics via Low-Temperature Carbene Crosslinking and High-Temperature Annealing." Chemical Science, 2025. https://doi.org/10.1039/d5sc01467k.

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With the increasing demand for wearable electronics, elastic ferroelectrics with high polarization intensity and Curie temperature have become essential. However, balancing high ferroelectric performance with elasticity in polymeric ferroelectrics remains...

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Cao, Xiao‐Xing, Ru‐Jie Zhou, Yu‐An Xiong, Guo‐Wei Du, Zi‐Jie Feng, Qiang Pan, Yin‐Zhu Chen, et al. "Volume‐Confined Fabrication of Large‐Scale Single‐Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials." Advanced Science, November 30, 2023. http://dx.doi.org/10.1002/advs.202305016.

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AbstractWith outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next‐generation wearable electronics and flexible devices in the film form. However, it remains a challenge to grow high‐quality thin films of molecular ferroelectrics. To address the above issue, a volume‐confined method is utilized to achieve ultrasmooth single‐crystal molecular ferroelectric thin films at the sub‐centimeter scale, with the thickness controlled in the range of 100–1000 nm. More importantly, the preparation method is applicable to most molecular ferroelectrics and has no dependency on substrates, showing excellent reproducibility and universality. To demonstrate the application potential, two‐dimensional (2D) transitional metal dichalcogenide semiconductor/molecular ferroelectric heterostructures are prepared and investigated by optical spectroscopic method, proving the possibility of integrating molecular ferroelectrics with 2D layered materials. These results may unlock the potential for preparing and developing high‐performance devices based on molecular ferroelectric thin films.

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Peng, Hang, Yan Qin, Xiao-Gang Chen, Xian-Jiang Song, Ren-Gen Xiong, and Wei-Qiang Liao. "The First Kleinman‐type Second‐Harmonic Generation Circular Dichroism On/Off Switchable Ferroelectrics." Angewandte Chemie, January 27, 2025. https://doi.org/10.1002/ange.202500285.

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Chiral ferroelectrics have recently received considerable interest due to their unique chiroptical properties. They can adopt Kleinman symmetry second‐harmonic generation (SHG)‐active chiral‐polar point groups in the ferroelectric phase while Kleinman symmetry SHG‐inactive chiral‐nonpolar point groups in the paraelectric phase, providing a great opportunity to realize on/off switching of SHG circular dichroism (SHG‐CD) response. However, the SHG‐CD effect was rarely explored in chiral ferroelectrics, and the on/off switchable SHG‐CD has never been reported. Herein, we report the first crown ether‐based chiral ferroelectrics (R/S‐CS)Ca(18‐crown‐6) (CS = camphor‐10‐sulfonic acid), which undergo a 422F2 type ferroelectric phase transition at around 336 K from Kleinman symmetry SHG‐active point group 2 to Kleinman symmetry SHG‐inactive point group 422. Notably, they exhibit obvious SHG‐CD responses with an anisotropy factor of up to 0.31. More importantly, the SHG‐CD response can be switched between SHG‐CD active (SHG‐CD on) and inactive (SHG‐CD off) states during the ferroelectric phase transition, which is unprecedented. To the best of our knowledge, this is the first example of Kleinman‐type SHG‐CD on/off switchable ferroelectric. Our findings open up a new way to switch SHG‐CD response based on chiral ferroelectrics, which would greatly inspire the further exploration of switchable SHG‐CD effects in chiral ferroelectrics.

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Peng, Hang, Yan Qin, Xiao-Gang Chen, Xian-Jiang Song, Ren-Gen Xiong, and Wei-Qiang Liao. "The First Kleinman‐type Second‐Harmonic Generation Circular Dichroism On/Off Switchable Ferroelectrics." Angewandte Chemie International Edition, January 27, 2025. https://doi.org/10.1002/anie.202500285.

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Chiral ferroelectrics have recently received considerable interest due to their unique chiroptical properties. They can adopt Kleinman symmetry second‐harmonic generation (SHG)‐active chiral‐polar point groups in the ferroelectric phase while Kleinman symmetry SHG‐inactive chiral‐nonpolar point groups in the paraelectric phase, providing a great opportunity to realize on/off switching of SHG circular dichroism (SHG‐CD) response. However, the SHG‐CD effect was rarely explored in chiral ferroelectrics, and the on/off switchable SHG‐CD has never been reported. Herein, we report the first crown ether‐based chiral ferroelectrics (R/S‐CS)Ca(18‐crown‐6) (CS = camphor‐10‐sulfonic acid), which undergo a 422F2 type ferroelectric phase transition at around 336 K from Kleinman symmetry SHG‐active point group 2 to Kleinman symmetry SHG‐inactive point group 422. Notably, they exhibit obvious SHG‐CD responses with an anisotropy factor of up to 0.31. More importantly, the SHG‐CD response can be switched between SHG‐CD active (SHG‐CD on) and inactive (SHG‐CD off) states during the ferroelectric phase transition, which is unprecedented. To the best of our knowledge, this is the first example of Kleinman‐type SHG‐CD on/off switchable ferroelectric. Our findings open up a new way to switch SHG‐CD response based on chiral ferroelectrics, which would greatly inspire the further exploration of switchable SHG‐CD effects in chiral ferroelectrics.

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Zhang, Junting, Yu Xie, Ke Ji, and Xiaofan Shen. "Perspective on 2D perovskite ferroelectrics and multiferroics." Applied Physics Letters 125, no. 23 (December 2, 2024). https://doi.org/10.1063/5.0235723.

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Two-dimensional (2D) ferroelectrics and multiferroics have attracted considerable scientific and technological interest in recent years due to the increasing demands for miniaturization and low energy consumption of electronic devices. At present, the research on 2D ferroelectrics and multiferroics is still focused on van der Waals materials, while the known bulk ferroelectric and multiferroic materials are mostly found in perovskite systems. The ability to prepare and transfer 2D perovskite oxides has provided unprecedented opportunities for developing ferroelectrics and multiferroics based on 2D perovskites. In this Perspective, we review the research progress on 2D ferroelectrics and multiferroics in inorganic perovskites in terms of different ferroelectric and magnetoelectric coupling mechanisms. The improper ferroelectricity and novel magnetoelectric coupling mechanisms discovered in 2D perovskites are emphasized, and then, the main challenges and future development direction are put forward.

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Huang, Jiawei, Changming Ke, Wei Zhu, and Shi Liu. "One Dimensional Ferroelectric Nanothreads with Axial and Radial Polarization." Nanoscale Horizons, 2023. http://dx.doi.org/10.1039/d3nh00154g.

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Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field,...

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Hu, Huihui, Rong Liu, Yan-Bing Zhu, Tai-Ting Sha, Xiao-Xing Cao, Zi-Jie Feng, Hao-Ran Ji, Qiang Pan, Ren-Gen Xiong, and Yu-Meng You. "Application of Molecular Ferroelectric in Photocatalytic Selective Oxidization of C(sp3)−H Bonds." Angewandte Chemie International Edition, April 7, 2025. https://doi.org/10.1002/anie.202500176.

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Molecular ferroelectrics utilize metal nodes and organic groups as catalytic active sites, with the surrounding ferroelectric polarization significantly enhancing catalytic activity and showcasing tremendous application potential. However, their application in photocatalysis remains underexplored. This study presents the first investigation of the molecular perovskite ferroelectric CuCl4‐[R‐MPA] (MPA = β‐methylphenethylamine) as a photocatalyst for alkane oxidation. Under the combined effects of light and ultrasound, this catalyst exhibited a notable turnover number (TON) of 6286 ± 491, which is 10^4 times higher than that of inorganic ferroelectrics like barium titanate (BaTiO3). The molecular ferroelectric exhibits excellent recyclability, good functional group tolerance, and broad substrate applicability. Mechanistic studies indicate that the built‐in electric field within the molecular ferroelectric facilitates the separation of photo‐generated charge carriers, thereby enhancing its ferroelectric photocatalytic activity. Electron paramagnetic resonance (EPR) results further reveal that the synergistic effects of light and ultrasound effectively generate reactive oxygen species. These findings underscore the unique advantages of molecular ferroelectrics compared to rigid inorganic counterparts, including their distinctive structural features and finely tunable catalytic performance, highlighting their potential for developing homogeneous, precisely active sites and efficient photocatalysts. This research lays the foundation for the broader application of molecular ferroelectrics in the field of photocatalysis.

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Hu, Huihui, Rong Liu, Yan-Bing Zhu, Tai-Ting Sha, Xiao-Xing Cao, Zi-Jie Feng, Hao-Ran Ji, Qiang Pan, Ren-Gen Xiong, and Yu-Meng You. "Application of Molecular Ferroelectric in Photocatalytic Selective Oxidization of C(sp3)−H Bonds." Angewandte Chemie, April 7, 2025. https://doi.org/10.1002/ange.202500176.

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Molecular ferroelectrics utilize metal nodes and organic groups as catalytic active sites, with the surrounding ferroelectric polarization significantly enhancing catalytic activity and showcasing tremendous application potential. However, their application in photocatalysis remains underexplored. This study presents the first investigation of the molecular perovskite ferroelectric CuCl4‐[R‐MPA] (MPA = β‐methylphenethylamine) as a photocatalyst for alkane oxidation. Under the combined effects of light and ultrasound, this catalyst exhibited a notable turnover number (TON) of 6286 ± 491, which is 10^4 times higher than that of inorganic ferroelectrics like barium titanate (BaTiO3). The molecular ferroelectric exhibits excellent recyclability, good functional group tolerance, and broad substrate applicability. Mechanistic studies indicate that the built‐in electric field within the molecular ferroelectric facilitates the separation of photo‐generated charge carriers, thereby enhancing its ferroelectric photocatalytic activity. Electron paramagnetic resonance (EPR) results further reveal that the synergistic effects of light and ultrasound effectively generate reactive oxygen species. These findings underscore the unique advantages of molecular ferroelectrics compared to rigid inorganic counterparts, including their distinctive structural features and finely tunable catalytic performance, highlighting their potential for developing homogeneous, precisely active sites and efficient photocatalysts. This research lays the foundation for the broader application of molecular ferroelectrics in the field of photocatalysis.

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Xue, Chen, Masaru Fujibayashi, Hengming Huang, Chisato Kato, Katsuya Ichihashi, Jun Manabe, Sadafumi Nishihara, Xiao‐Ming Ren, and Takayoshi Nakamura. "Enhanced Electromechanical Response in 1D Hybrid Perovskites: Coexistence of Normal and Relaxor Ferroelectric Phases." Advanced Functional Materials, March 20, 2025. https://doi.org/10.1002/adfm.202501299.

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AbstractOrganic hybrid perovskites with polarization reversal are the emergent ferroelectric materials, lacking the connection between the domain‐wall (DW) dynamics and the intrinsic microscopic polarization reversal. The polarization reversal experimentally and theoretically is investigated for normal and relaxor ferroelectrics coexisted in one‐dimensional (1D) TMAPbI3 (tetramethylammonium, TMA). Depolarization effects induce distinct DW dynamics in normal and relaxor ferroelectrics, leading to deviations in energy barriers between DW velocity models and theoretical predictions. In this research, it is found that the electric field‐induced electromechanical response in relaxor ferroelectric raised by 124 times of d33 from 0.29 pC N−1 @ 0 kV cm−1 to 37.17 pC N−1 @ 2 kV cm−1, which is 9 times higher than the value in normal ferroelectrics, implies an excellent electromechanical property in the relaxor ferroelectric. Phonon dispersions identify the soft ferroelectric mode, in which the asymmetric iodine displacements destroy the symmetry plane, ascribing the polarization reversal along the nonpolar axis and the strain‐ and field‐enhanced electromechanical response in the relaxor ferroelectric. Through this research, the connection between the microscopic atomic motion, the macroscopic polarization reversal, and the depolarization effect is revealed, validating methods that are needed to develop the next generation of relaxor ferroelectrics.

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