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Artykuły w czasopismach na temat „Ferroelectrics”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Zhang, Xinhao, and Bo Peng. "The twisted two-dimensional ferroelectrics." Journal of Semiconductors 44, no. 1 (2023): 011002. http://dx.doi.org/10.1088/1674-4926/44/1/011002.

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Abstract Since the beginning of research on two-dimensional (2D) materials, a few numbers of 2D ferroelectric materials have been predicted or experimentally confirmed, but 2D ferroelectrics as necessary functional materials are greatly important in developing future electronic devices. Recent breakthroughs in 2D ferroelectric materials are impressive, and the physical and structural properties of twisted 2D ferroelectrics, a new type of ferroelectric structure by rotating alternating monolayers to form an angle with each other, have attracted widespread interest and discussion. Here, we revie

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2

WANG, JIE, and TONG-YI ZHANG. "PHASE FIELD STUDY OF POLARIZATION VORTEX IN FERROELECTRIC NANOSTRUCTURES." Journal of Advanced Dielectrics 02, no. 02 (2012): 1241002. http://dx.doi.org/10.1142/s2010135x12410020.

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Ferroelectric nanostructures are attracting considerable attention due to their unusual physical properties and potential applications in memory devices and nanoelectromechanical systems. It has been found that low-dimensional ferroelectrics, such as ferroelectric nanodots, ferroelectric nanotubes and ferroelectric thin films, exhibit polarization vortices or vortex-like domain structures due to the strong depolarization field and the size effect. The polarization vortex is regarded as a new toroidal order in ferroelectrics which is different from the rectilinear order of polarization. The vor

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3

MA, WENHUI. "FLEXOELECTRIC EFFECT IN FERROELECTRICS." Functional Materials Letters 01, no. 03 (2008): 235–38. http://dx.doi.org/10.1142/s179360470800037x.

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Flexoelectric effect and its influence on the application of multifunctional ferroelectrics have been investigated. Theory of flexoelectric coupling has indicated that mechanical strain gradient can impact polarization in a way analogous to electric field. Experimentally, magnitudes of the flexoelectric coefficients have been measured in ferroelectric, incipient ferroelectric and relaxor ferroelectric perovskites. Present data of flexoelectricity suggests that such unconventional electromechanical coupling could make unique contribution to properly engineered ferroelectric thin films and nanos

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4

Huyan, Huaixun, Linze Li, Christopher Addiego, Wenpei Gao, and Xiaoqing Pan. "Structures and electronic properties of domain walls in BiFeO3 thin films." National Science Review 6, no. 4 (2019): 669–83. http://dx.doi.org/10.1093/nsr/nwz101.

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Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-ba

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5

Ke, Changming, Jiawei Huang, and Shi Liu. "Two-dimensional ferroelectric metal for electrocatalysis." Materials Horizons 8, no. 12 (2021): 3387–93. http://dx.doi.org/10.1039/d1mh01556g.

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Two dimensional ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal. These 2D ferroelectrics can serve as electrically-tunable, high-quality switchable electrocatalysts.

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6

Kimura, Tsuyoshi. "Current Progress of Research on Magnetically-induced Ferroelectrics." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C6. http://dx.doi.org/10.1107/s2053273314099938.

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Among several different types of magnetoelectric multiferroics, "magnetically-induced ferroelectrics" in which ferroelectricity is induced by complex spin orders, such as spiral orders, exhibit giant direct magnetoelectric effects, i.e., remarkable changes in electric polarization in response to a magnetic field. Not a few spin-driven ferroelectrics showing the magnetoelectric effects have been found in the past decade.[1] However, their induced ferroelectric polarization is much smaller than that in conventional ferroelectrics and mostly develops only at temperatures much lower than room temp

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7

Liu, Meiying, Jingjing Liang, Yadong Tian, and Zhiliang Liu. "Post-synthetic modification within MOFs: a valuable strategy for modulating their ferroelectric performance." CrystEngComm 24, no. 4 (2022): 724–37. http://dx.doi.org/10.1039/d1ce01567b.

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It is a great route designing new MOF ferroelectrics to enrich the scope of ferroelectrics or improving the ferroelectric performance to enhance the opportunity of applications through the strategy of post-synthetic modification (PSM).

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8

Gao, Liang, Ben-Lin Hu, Linping Wang, et al. "Intrinsically elastic polymer ferroelectric by precise slight cross-linking." Science 381, no. 6657 (2023): 540–44. http://dx.doi.org/10.1126/science.adh2509.

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Ferroelectrics are an integral component of the modern world and are of importance in electrics, electronics, and biomedicine. However, their usage in emerging wearable electronics is limited by inelastic deformation. We developed intrinsically elastic ferroelectrics by combining ferroelectric response and elastic resilience into one material by slight cross-linking of plastic ferroelectric polymers. The precise slight cross-linking can realize the complex balance between crystallinity and resilience. Thus, we obtained an elastic ferroelectric with a stable ferroelectric response under mechani

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9

PARK, Min Hyuk. "Renaissance of Ferroelectric Memories: Can They Be a Game-changer?" Physics and High Technology 30, no. 9 (2021): 16–23. http://dx.doi.org/10.3938/phit.30.028.

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Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications o

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10

Chen, Zibin, Fei Li, Qianwei Huang, et al. "Giant tuning of ferroelectricity in single crystals by thickness engineering." Science Advances 6, no. 42 (2020): eabc7156. http://dx.doi.org/10.1126/sciadv.abc7156.

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Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectric

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11

Ricinschi, Dan, and Eisuke Tokumitsu. "Multiagent Strategic Interaction Based on a Game Theoretical Approach to Polarization Reversal in Ferroelectric Capacitors." Journal of Advanced Computational Intelligence and Intelligent Informatics 15, no. 7 (2011): 806–12. http://dx.doi.org/10.20965/jaciii.2011.p0806.

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Ferroelectric materials are currently integrated in nonvolatile memory devices, whose principle is to allocate 0 and 1 logic bits to opposite orientations of the spontaneous polarization vector that are permitted by crystal symmetry. Typically made of randomly oriented grains, ferroelectrics tend to split into domains, according to the experienced sequence of electric fields, thermal treatments and any structural imperfections. On this background, we attempt to formulate new principles of exploiting such structural and operational degrees of freedom for unconventional applications of ferroelec

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12

Pavlenko, Maksim A., Franco Di Rino, Leo Boron, et al. "Phase Diagram of a Strained Ferroelectric Nanowire." Crystals 12, no. 4 (2022): 453. http://dx.doi.org/10.3390/cryst12040453.

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Ferroelectric materials manifest unique dielectric, ferroelastic, and piezoelectric properties. A targeted design of ferroelectrics at the nanoscale is not only of fundamental appeal but holds the highest potential for applications. Compared to two-dimensional nanostructures such as thin films and superlattices, one-dimensional ferroelectric nanowires are investigated to a much lesser extent. Here, we reveal a variety of the topological polarization states, particularly the vortex and helical chiral phases, in loaded ferroelectric nanowires, which enable us to complete the strain–temperature p

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13

YANG, Chan-Ho. "New Horizons for Ferroelectrics." Physics and High Technology 30, no. 9 (2021): 24–30. http://dx.doi.org/10.3938/phit.30.029.

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Since the discovery of ferroelectricity in 1920, dielectric research has provided a variety of fundamental physics problems and sustainable applications. Advances in synthesis and nanoscale characterization, along with theoretical innovations, have made ferroelectrics more versatile. In this perspective, we discuss several directions for future ferroelectric research in terms of flexoelectricity, ferroelectric topology, and lattice defects, as well as cooperation with associated fields.

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14

Mikolajick, Thomas, Stefan Müller, Tony Schenk, et al. "Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors." Advances in Science and Technology 95 (October 2014): 136–45. http://dx.doi.org/10.4028/www.scientific.net/ast.95.136.

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Ferroelectrics are very interesting materials for nonvolatile data storage due to the fact that they deliver very low power programming operation combined with nonvolatile retention. For 60 years researchers have been inspired by these fascinating possibilities and have tried to build ferroelectric memory devices that can compete with mainstream technologies in their respective time. The progress of the current concepts is limited by the low compatibility of ferroelectrics like PZT with CMOS processing. Therefore, PZT or SBT based 1T1C ferroelectric memories are not scaling below 130 nm and 1T

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15

Sidorkin, A. S., B. M. Darinskii, S. D. Milovidova, L. N. Korotkov, and G. S. Grigoryan. "Effect of the Component Interaction on the Phase Transitions and Dielectric Properties of Ferroelectric Composites." Кристаллография 68, no. 5 (2023): 832–40. http://dx.doi.org/10.31857/s0023476123600519.

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The dielectric properties of ferroelectric composites and the specific features of the phase transitions occurring in them are discussed in comparison with the homogeneous ferroelectrics incorporated in the composites studied. The components incorporated into the dielectric matrix of ferroelectrics are considered to be triglycine sulfate, single crystals of potassium dihydrogen phosphate group, sodium nitrite, and perovskite-type materials. The factors changing the temperature range of polar phase existence in the ferroelectric composites under consideration are revealed and discussed. The res

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16

Wang, Yumeng. "Two-Dimensional Ferroelectric Materials: Synthesis, Characterization and Applications." Highlights in Science, Engineering and Technology 112 (August 20, 2024): 128–36. http://dx.doi.org/10.54097/rzvdx423.

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In recent years, the continuous advancements in microelectronics have driven the evolution of electronic devices towards miniaturization and integration. However, at the nanoscale level, surface and size effects become significant, imposing constraints on the use of conventional bulk ferroelectric materials in contemporary industry. As a result, in the field of materials research, two-dimensional (2D) ferroelectric materials with stable spontaneous polarization and minimal size effects have gained significant attention. These novel 2D ferroelectric materials have great potential for future nan

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17

Shang, Jing, Congxin Xia, Chun Tang, et al. "Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP₂Se₆ monolayers." Nanoscale Horizons 6, no. 12 (2021): 971–78. http://dx.doi.org/10.1039/d1nh00402f.

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Two-dimensional ferroelectrics are core candidates for the development of next-generation non-volatile storage devices, which rely highly on ferroelectric stability and feasible approaches to manipulate the ferroelectric polarization and domain.

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18

Le, Minh-Tien, Phuong-Linh Do, Van-Tuan Le, et al. "The origin of piezoelectric enhancement in compositionally graded ferroelectrics with sinusoidal variation." Applied Physics Letters 121, no. 16 (2022): 162905. http://dx.doi.org/10.1063/5.0115482.

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The direct piezoelectric effect of [Formula: see text] Ba1− xSr xTiO3 graded ferroelectrics, whose compositions change in a sinusoidal form, is investigated via an extended phase-field method. The obtained results demonstrate that the piezoelectric coefficient can be significantly enhanced by controlling the amplitude of sinusoidal variation. The origin of piezoelectric enhancement is investigated by considering the formation of polarization domain structures and their behaviors under strain. Although a ferroelectric tetragonal phase or a paraelectric cubic phase primarily form in homogeneous

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19

Liu, Arthur Haozhe, Lisa Luhong Wang, and Lingping Kong. "Relaxor ferroelectrics materials under high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C979. http://dx.doi.org/10.1107/s2053273314090202.

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The rich phase diagrams from both relaxor and normal ferroelectrics under high pressure, stimulate us to study the pressure effect on the relaxor-PbTiO3 (PT) systems, to check whether the high pressure cubic structure will turn to low symmetry structure upon strong compression is the common behaviors for relaxor ferroelectrics materials. Furthermore, a complete phase diagram study of pressure-temperature effect on structure will allow us to explore the limitation on applications of relaxor-PT material devices under harsh environment involving in high pressure and high temperature conditions. S

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20

Li, Peng-Fei, Wei-Qiang Liao, Yuan-Yuan Tang, et al. "Organic enantiomeric high-Tcferroelectrics." Proceedings of the National Academy of Sciences 116, no. 13 (2019): 5878–85. http://dx.doi.org/10.1073/pnas.1817866116.

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For nearly 100 y, homochiral ferroelectrics were basically multicomponent simple organic amine salts and metal coordination compounds. Single-component homochiral organic ferroelectric crystals with high-Curie temperature (Tc) phase transition were very rarely reported, although the first ferroelectric Rochelle salt discovered in 1920 is a homochiral metal coordination compound. Here, we report a pair of single-component organic enantiomorphic ferroelectrics, (R)-3-quinuclidinol and (S)-3-quinuclidinol, as well as the racemic mixture (Rac)-3-quinuclidinol. The homochiral (R)- and (S)-3-quinucl

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21

Sayer, M., Z. Wu, C. V. R. Vasant Kumar, D. T. Amm, and E. M. Griswold. "Ferroelectrics for semiconductor devices." Canadian Journal of Physics 70, no. 10-11 (1992): 1159–70. http://dx.doi.org/10.1139/p92-188.

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The integration of thin film ferroelectrics with silicon processing is being implemented for various types of devices. The technology is based on the sputtering or chemical deposition of lead-based perovskites such as lead zirconate titanate. Factors concerned with the integration of ferroelectric films with semiconductor processing are described. Major interests in Canada include nonvolatile ferroelectric random access memories for high-speed digital or long-term analog memory applications, high-density capacitors, electro-optic switches, and a wide range of sensors and actuators integrated i

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22

Wu, Ming, Yanan Xiao, Yu Yan, et al. "Achieving Good Temperature Stability of Dielectric Constant by Constructing Composition Gradient in (Pb1−x,Lax)(Zr0.65,Ti0.35)O3 Multilayer Thin Films." Materials 15, no. 12 (2022): 4123. http://dx.doi.org/10.3390/ma15124123.

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Ferroelectrics with a high dielectric constant are ideal materials for the fabrication of miniaturized and integrated electronic devices. However, the dielectric constant of ferroelectrics varies significantly with the change of temperature, which is detrimental to the working stability of electronic devices. This work demonstrates a new strategy to design a ferroelectric dielectric with a high temperature stability, that is, the design of a multilayer relaxor ferroelectric thin film with a composition gradient. As a result, the fabricated up-graded (Pb,La)(Zr0.65,Ti0.35)O3 multilayer thin fil

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23

Benedek, Nicole A., and Michael A. Hayward. "Hybrid Improper Ferroelectricity: A Theoretical, Computational, and Synthetic Perspective." Annual Review of Materials Research 52, no. 1 (2022): 331–55. http://dx.doi.org/10.1146/annurev-matsci-080819-010313.

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We review the theoretical, computational, and synthetic literature on hybrid improper ferroelectricity in layered perovskite oxides. Different ferroelectric mechanisms are described and compared, and their elucidation using theory and first-principles calculations is discussed. We also highlight the connections between crystal chemistry and the physical mechanisms of ferroelectricity. The experimental literature on hybrid improper ferroelectrics is surveyed, with a particular emphasis on cation-ordered double perovskites, Ruddlesden–Popper and Dion–Jacobson phases. We discuss preparative route

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Rüdiger, Andreas, and Rainer Waser. "Nanoscale Ferroelectrics." Advances in Science and Technology 45 (October 2006): 2392–99. http://dx.doi.org/10.4028/www.scientific.net/ast.45.2392.

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Ferroelectrics are among the most advanced materials for non-volatile storage applications. Their two thermodynamically equivalent groundstates of spontaneous polarization can be toggled between by an external electric field. We present recent progress in the fabrication, registration, manipulation and characterization of nanoscale ferroelectrics. Chemical solution deposition is adapted to a pre-registration process by e-beam lithography to fabricate registered ferroelectric nanostructures below 100 nm width. A post-processing by chemical mechanical polishing either for embedded or free grains

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25

Dong, Guohua, Suzhi Li, Mouteng Yao, et al. "Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation." Science 366, no. 6464 (2019): 475–79. http://dx.doi.org/10.1126/science.aay7221.

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Ferroelectrics are usually inflexible oxides that undergo brittle deformation. We synthesized freestanding single-crystalline ferroelectric barium titanate (BaTiO3) membranes with a damage-free lifting-off process. Our BaTiO3 membranes can undergo a ~180° folding during an in situ bending test, demonstrating a super-elasticity and ultraflexibility. We found that the origin of the super-elasticity was from the dynamic evolution of ferroelectric nanodomains. High stresses modulate the energy landscape markedly and allow the dipoles to rotate continuously between the a and c nanodomains. A contin

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26

Patrusheva, Tamara, Sergey Petrov, Ludmila Drozdova, and Aleksandr Shashurin. "FERROELECTRICS IN ACOUSTOELECTRONICS." VOLUME 39, VOLUME 39 (2021): 217. http://dx.doi.org/10.36336/akustika202139217.

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Аcoustoelectronics is one of the areas of acoustics, associated with the use of mechanical resonance effects and the piezoelectric effect, as well as the effect based on the interaction of electric fields with waves of acoustic stresses in a piezoelectric material. The main materials used in acoustoelectronics are ferroelectrics, which are mainly complex oxide materials. This article discusses the possibility of increasing the purity and homogeneity of ferroelectric materials, as well as softening the regimes of their synthesis using the solution extraction-pyrolytic method. It is shown that t

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Shao, Yu-Tsun, and Jian-Min Zuo. "Nanoscale symmetry fluctuations in ferroelectric barium titanate, BaTiO3." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 73, no. 4 (2017): 708–14. http://dx.doi.org/10.1107/s2052520617008496.

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Crystal charge density is a ground-state electronic property. In ferroelectrics, charge is strongly influenced by lattice andvice versa, leading to a range of interesting temperature-dependent physical properties. However, experimental determination of charge in ferroelectrics is challenging because of the formation of ferroelectric domains. Demonstrated here is the scanning convergent-beam electron diffraction (SCBED) technique that can be simultaneously used for imaging ferroelectric domains and identifying crystal symmetry and its fluctuations. Results from SCBED confirm the acentric tetrag

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Li, Yibao, Ye Du, Chao-Ran Huang, et al. "Homochiral anionic modification toward the chemical design of organic enantiomeric ferroelectrics." Chemical Communications 57, no. 42 (2021): 5171–74. http://dx.doi.org/10.1039/d1cc01675j.

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Zhang, J. P., and J. S. Speck. "Identification of the polarized microregions in PLZT." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 556–57. http://dx.doi.org/10.1017/s0424820100170517.

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Relaxor ferroe lee tries are classified by broad or diffuse transitions from their high temperature paraelectric (non-polar phase) to their low temperature ferroelectric phase. This is in contrast to conventional ferroelectrics such as PbTiO3 that show discrete ferroelectric transitions characterized by Curie-Weiss behavior in the dielectric susceptibility near the Curie transition temperature Tc. For relaxor ferroelectrics, the transition has a breadth on the order of 100°C The polarized domains normally show complex nanoscale mottled contrast in either bright field or dark field, two-beam or

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Wang, Jian-Jun, Bo Wang, and Long-Qing Chen. "Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method." Annual Review of Materials Research 49, no. 1 (2019): 127–52. http://dx.doi.org/10.1146/annurev-matsci-070218-121843.

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Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanos

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Kho, Wonwoo, Hyunjoo Hwang, Jisoo Kim, Gyuil Park, and Seung-Eon Ahn. "Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures." Nanomaterials 13, no. 3 (2023): 439. http://dx.doi.org/10.3390/nano13030439.

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Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materials because of their ability to maintain polarization, even when an external electric field is removed. Recently, it has been reported that HfO2 thin films compatible with complementary metal–oxide–semiconductor (CMOS) processes exhibit ferroelectricity even at a thickness of less than 10 nm. Among t

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Lai, Keji. "Spontaneous polarization in van der Waals materials: Two-dimensional ferroelectrics and device applications." Journal of Applied Physics 132, no. 12 (2022): 121102. http://dx.doi.org/10.1063/5.0116445.

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The research on two-dimensional (2D) van der Waals ferroelectrics has grown substantially in the last decade. These layered materials differ from conventional thin-film oxide ferroelectrics in that the surface and interface are free from dangling bonds. Some may also possess uncommon properties, such as bandgap tunability, mechanical flexibility, and high carrier mobility, which are desirable for applications in nanoelectronics and optoelectronics. This Tutorial starts by reviewing the theoretical tools in 2D ferroelectric studies, followed by discussing the material synthesis and sample chara

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Zhu, Zhongyunshen, Anton E. O. Persson, and Lars-Erik Wernersson. "Sensing single domains and individual defects in scaled ferroelectrics." Science Advances 9, no. 5 (2023). http://dx.doi.org/10.1126/sciadv.ade7098.

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Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-

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Li, Bowen, Linping Wang, Liang Gao, et al. "Elastic relaxor ferroelectric by thiol‐ene click reaction." Angewandte Chemie International Edition, March 15, 2024. http://dx.doi.org/10.1002/anie.202400511.

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As ferroelectrics hold significance and application prospects in wearable devices, the elastification of ferroelectrics becomes more and more important. Nevertheless, achieving elastic ferroelectrics requires stringent synthesis conditions, while the elastification of relaxor ferroelectric materials remains unexplored, presenting an untapped potential for utilization in energy storage and actuation for wearable electronics. The thiol‐ene click reaction offers a mild and rapid reaction platform to prepare functional polymers. Therefore, we employed this approach to obtain an elastic relaxor fer

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Li, Bowen, Linping Wang, Liang Gao, et al. "Elastic relaxor ferroelectric by thiol‐ene click reaction." Angewandte Chemie, March 15, 2024. http://dx.doi.org/10.1002/ange.202400511.

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As ferroelectrics hold significance and application prospects in wearable devices, the elastification of ferroelectrics becomes more and more important. Nevertheless, achieving elastic ferroelectrics requires stringent synthesis conditions, while the elastification of relaxor ferroelectric materials remains unexplored, presenting an untapped potential for utilization in energy storage and actuation for wearable electronics. The thiol‐ene click reaction offers a mild and rapid reaction platform to prepare functional polymers. Therefore, we employed this approach to obtain an elastic relaxor fer

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Ma, Junpeng, Ming-Ding Li, Fang Wang, Chen Li, and Qun-Dong Shen. "Controllable tuning of ferroelectric switching via the lattice in crystallographically engineered molecular ferroelectrics." Journal of Applied Physics 133, no. 19 (2023). http://dx.doi.org/10.1063/5.0148284.

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Reducing the switching energy and improving the switching speed of ferroelectrics remain an important goal in the pursuit of electronic devices with ultralow energy consumption and ultrafast response. Molecular ferroelectrics with concise dipole switching mechanism and facile structural tunability are a good platform for manipulating the ferroelectric domains. A methodology is demonstrated to manipulation of ferroelectric domain switching by tailor-made lattice parameters of molecular ferroelectrics, by following which, we succeeded in lowering the threshold electric field and improving the dy

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Yao, Jie, Zi‐Jie Feng, Zhenliang Hu, et al. "2D Molecular Ferroelectric with Large Out‐of‐plane Polarization for In‐Memory Computing." Advanced Functional Materials, February 6, 2024. http://dx.doi.org/10.1002/adfm.202314790.

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Abstract2D ferroelectric materials with out‐of‐plane polarization are crucial for future nanoscale logic devices due to the increasing demand for energy‐efficient architectures in artificial intelligence. However, only a few 2D out‐of‐plane ferroelectrics are confirmed experimentally. As an important branch of ferroelectrics, organic–inorganic hybrid perovskite ferroelectrics show flexible structures, making them eligible for constructing multifunctional materials. Here, a 2D organic–inorganic hybrid perovskite ferroelectric (6‐BHA)2CdBr4 (6‐BHA is 6‐bromohexylamine) is designed, which crystal

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Fan, Zhiwei, Jingyuan Qu, Tao Wang, et al. "Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications." Chinese Physics B, November 2, 2023. http://dx.doi.org/10.1088/1674-1056/ad08a4.

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Abstract Ferroelectrics are a kind of material with polar structure and the polarization direction can be inverted reversibly by applying electric field. They have attracted tremendous attention for their extensive applications in nonvolatile memory, sensors and neuromorphic computing. However, the conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional (2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers

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Han, Wei, Yunwei Jia, Hao Wang, Shu Ping Lau, Thuc Hue Ly, and Jiong Zhao. "Phase transition of 2D van der Waals ferroelectrics." 2D Materials, May 12, 2025. https://doi.org/10.1088/2053-1583/add749.

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Abstract Two-dimensional (2D) van der Waals (vdW) ferroelectrics with switchable electric polarization offer exciting possibilities in the fields of physics, materials science, and device engineering. Beyond the conventional polarization-state regulation through electric-field, 2D ferroelectrics can offer important additional functionalities through isomeric phases, including paraelectric and antiferroelectric phases. In recent years, a variety of novel ferroelectric orders have been discovered in 2D materials, resulting from intra- or inter-layer symmetry-breaking. These hidden phases, exhibi

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40

Huang, Yulong, Jennifer L. Gottfried, Arpita Sarkar, Gengyi Zhang, Haiqing Lin, and Shenqiang Ren. "Proton-controlled molecular ionic ferroelectrics." Nature Communications 14, no. 1 (2023). http://dx.doi.org/10.1038/s41467-023-40825-6.

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AbstractMolecular ferroelectric materials consist of organic and inorganic ions held together by hydrogen bonds, electrostatic forces, and van der Waals interactions. However, ionically tailored multifunctionality in molecular ferroelectrics has been a missing component despite of their peculiar stimuli-responsive structure and building blocks. Here we report molecular ionic ferroelectrics exhibiting the coexistence of room-temperature ionic conductivity (6.1 × 10−5 S/cm) and ferroelectricity, which triggers the ionic-coupled ferroelectric properties. Such ionic ferroelectrics with the absorbe

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Wang, Linping, Liang Gao, Xiaocui Rao, et al. "High-Performance Elastic Ferroelectrics via Low-Temperature Carbene Crosslinking and High-Temperature Annealing." Chemical Science, 2025. https://doi.org/10.1039/d5sc01467k.

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With the increasing demand for wearable electronics, elastic ferroelectrics with high polarization intensity and Curie temperature have become essential. However, balancing high ferroelectric performance with elasticity in polymeric ferroelectrics remains...

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Cao, Xiao‐Xing, Ru‐Jie Zhou, Yu‐An Xiong, et al. "Volume‐Confined Fabrication of Large‐Scale Single‐Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials." Advanced Science, November 30, 2023. http://dx.doi.org/10.1002/advs.202305016.

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AbstractWith outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next‐generation wearable electronics and flexible devices in the film form. However, it remains a challenge to grow high‐quality thin films of molecular ferroelectrics. To address the above issue, a volume‐confined method is utilized to achieve ultrasmooth single‐crystal molecular ferroelectric thin films at the sub‐centimeter scale, with the thickness controlled in the ran

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Peng, Hang, Yan Qin, Xiao-Gang Chen, Xian-Jiang Song, Ren-Gen Xiong, and Wei-Qiang Liao. "The First Kleinman‐type Second‐Harmonic Generation Circular Dichroism On/Off Switchable Ferroelectrics." Angewandte Chemie, January 27, 2025. https://doi.org/10.1002/ange.202500285.

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Chiral ferroelectrics have recently received considerable interest due to their unique chiroptical properties. They can adopt Kleinman symmetry second‐harmonic generation (SHG)‐active chiral‐polar point groups in the ferroelectric phase while Kleinman symmetry SHG‐inactive chiral‐nonpolar point groups in the paraelectric phase, providing a great opportunity to realize on/off switching of SHG circular dichroism (SHG‐CD) response. However, the SHG‐CD effect was rarely explored in chiral ferroelectrics, and the on/off switchable SHG‐CD has never been reported. Herein, we report the first crown et

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Peng, Hang, Yan Qin, Xiao-Gang Chen, Xian-Jiang Song, Ren-Gen Xiong, and Wei-Qiang Liao. "The First Kleinman‐type Second‐Harmonic Generation Circular Dichroism On/Off Switchable Ferroelectrics." Angewandte Chemie International Edition, January 27, 2025. https://doi.org/10.1002/anie.202500285.

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Chiral ferroelectrics have recently received considerable interest due to their unique chiroptical properties. They can adopt Kleinman symmetry second‐harmonic generation (SHG)‐active chiral‐polar point groups in the ferroelectric phase while Kleinman symmetry SHG‐inactive chiral‐nonpolar point groups in the paraelectric phase, providing a great opportunity to realize on/off switching of SHG circular dichroism (SHG‐CD) response. However, the SHG‐CD effect was rarely explored in chiral ferroelectrics, and the on/off switchable SHG‐CD has never been reported. Herein, we report the first crown et

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Zhang, Junting, Yu Xie, Ke Ji, and Xiaofan Shen. "Perspective on 2D perovskite ferroelectrics and multiferroics." Applied Physics Letters 125, no. 23 (2024). https://doi.org/10.1063/5.0235723.

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Two-dimensional (2D) ferroelectrics and multiferroics have attracted considerable scientific and technological interest in recent years due to the increasing demands for miniaturization and low energy consumption of electronic devices. At present, the research on 2D ferroelectrics and multiferroics is still focused on van der Waals materials, while the known bulk ferroelectric and multiferroic materials are mostly found in perovskite systems. The ability to prepare and transfer 2D perovskite oxides has provided unprecedented opportunities for developing ferroelectrics and multiferroics based o

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Huang, Jiawei, Changming Ke, Wei Zhu, and Shi Liu. "One Dimensional Ferroelectric Nanothreads with Axial and Radial Polarization." Nanoscale Horizons, 2023. http://dx.doi.org/10.1039/d3nh00154g.

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Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field,...

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Hu, Huihui, Rong Liu, Yan-Bing Zhu, et al. "Application of Molecular Ferroelectric in Photocatalytic Selective Oxidization of C(sp3)−H Bonds." Angewandte Chemie International Edition, April 7, 2025. https://doi.org/10.1002/anie.202500176.

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Molecular ferroelectrics utilize metal nodes and organic groups as catalytic active sites, with the surrounding ferroelectric polarization significantly enhancing catalytic activity and showcasing tremendous application potential. However, their application in photocatalysis remains underexplored. This study presents the first investigation of the molecular perovskite ferroelectric CuCl4‐[R‐MPA] (MPA = β‐methylphenethylamine) as a photocatalyst for alkane oxidation. Under the combined effects of light and ultrasound, this catalyst exhibited a notable turnover number (TON) of 6286 ± 491, which

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Hu, Huihui, Rong Liu, Yan-Bing Zhu, et al. "Application of Molecular Ferroelectric in Photocatalytic Selective Oxidization of C(sp3)−H Bonds." Angewandte Chemie, April 7, 2025. https://doi.org/10.1002/ange.202500176.

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Molecular ferroelectrics utilize metal nodes and organic groups as catalytic active sites, with the surrounding ferroelectric polarization significantly enhancing catalytic activity and showcasing tremendous application potential. However, their application in photocatalysis remains underexplored. This study presents the first investigation of the molecular perovskite ferroelectric CuCl4‐[R‐MPA] (MPA = β‐methylphenethylamine) as a photocatalyst for alkane oxidation. Under the combined effects of light and ultrasound, this catalyst exhibited a notable turnover number (TON) of 6286 ± 491, which

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Xue, Chen, Masaru Fujibayashi, Hengming Huang, et al. "Enhanced Electromechanical Response in 1D Hybrid Perovskites: Coexistence of Normal and Relaxor Ferroelectric Phases." Advanced Functional Materials, March 20, 2025. https://doi.org/10.1002/adfm.202501299.

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AbstractOrganic hybrid perovskites with polarization reversal are the emergent ferroelectric materials, lacking the connection between the domain‐wall (DW) dynamics and the intrinsic microscopic polarization reversal. The polarization reversal experimentally and theoretically is investigated for normal and relaxor ferroelectrics coexisted in one‐dimensional (1D) TMAPbI3 (tetramethylammonium, TMA). Depolarization effects induce distinct DW dynamics in normal and relaxor ferroelectrics, leading to deviations in energy barriers between DW velocity models and theoretical predictions. In this resea

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Xiong, Yu-An, Sheng-Shun Duan, Hui-Hui Hu, et al. "Enhancement of phase transition temperature through hydrogen bond modification in molecular ferroelectrics." Nature Communications 15, no. 1 (2024). http://dx.doi.org/10.1038/s41467-024-48948-0.

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AbstractMolecular ferroelectrics are attracting great interest due to their light weight, mechanical flexibility, low cost, ease of processing and environmental friendliness. These advantages make molecular ferroelectrics viable alternatives or supplements to inorganic ceramics and polymer ferroelectrics. It is expected that molecular ferroelectrics with good performance can be fabricated, which in turns calls for effective chemical design strategies in crystal engineering. To achieve so, we propose a hydrogen bond modification method by introducing the hydroxyl group, and successfully boost t

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