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Gotowa bibliografia na temat „Ferromagnetic Quantum Dots”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Ferromagnetic Quantum Dots"

1

GAO, PAN, SUHANG LIU, LIN TIAN, and TIANXING MA. "QUANTUM MONTE CARLO STUDY OF MAGNETIC CORRELATION IN GRAPHENE NANORIBBONS AND QUANTUM DOTS." Modern Physics Letters B 27, no. 21 (2013): 1330016. http://dx.doi.org/10.1142/s0217984913300160.

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To realize the application of spintronics, possible magnetism in graphene-based material is an important issue to be addressed. At the tight banding level of armchair graphene nanoribbons, there are two flat bands in the band structure, two Van Hove singularities in the density of states, and the introducing of the next-nearest-neighbor hopping term cause high asymmetry in them, which plays a key role in the behavior of magnetic correlation. We further our studies within determinant quantum Monte Carlo simulation to treat the electron–electron interaction. It is found that the armchair graphen

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2

Omariy, Aiman Al, and Reim Almotiriz y. "QUANTUM DOTS IN FERROMAGNETIC HEISENBERG MODEL." EPH - International Journal of Applied Science 2, no. 4 (2016): 1–5. http://dx.doi.org/10.53555/eijas.v2i4.24.

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Quantum Dots (QDs) are semiconductor-nanostructure materials which are also called arti cial atoms. QDs are classi ed as ferromagnetic material. Theoretically, Heisenberg model is regarded as a good model in describing these QDs. We applied Spin Wave Theory (SWT) on the above mentioned model to explore the physical properties of these materials, such as ground state energy, excitation energy and magnetization. We found that the ground state energy "g increased with the applied external magnetic eld B as B0:3. A phase transition was also observed around B~1T, which indicate a transition from si

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3

Ma, Xi Ying. "Fabrication of Ferromagnetic Ge Quantum Dots Material." Advanced Materials Research 531 (June 2012): 71–74. http://dx.doi.org/10.4028/www.scientific.net/amr.531.71.

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GeMn magnetic quantum dots (QDs) material were grown with a GeH4/Ar mixed gas under a constant flowing at 400°C by means of plasma enhanced chemical vapor deposition (PECVD) process, then doped with Mn doped using magnetic sputtering technique and annealed at 600 C. The QDs with a Ge0.88Mn0.12 structure derived from the energy spectrum show a wide opening hysteresis loops with a large remnant magnetizations Mr are 0.1410-4 and 0.2510-4 emu/g for the as grown and the annealed samples. Moreover, the magnetic QDs show high quality voltage-current (I-V) and voltage-capacitance (C-V) properties.

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4

Xiu, Faxian. "Magnetic Mn-Doped Ge Nanostructures." ISRN Condensed Matter Physics 2012 (May 7, 2012): 1–25. http://dx.doi.org/10.5402/2012/198590.

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With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical

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5

MA, QIONG, TAO TU, LI WANG, et al. "SUBSTRATE MODULATED GRAPHENE QUANTUM DOTS." Modern Physics Letters B 26, no. 25 (2012): 1250162. http://dx.doi.org/10.1142/s021798491250162x.

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We propose a method to use gapped graphene as barriers to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated SiO 2 substrate partly hydrogen-passivated. In particular, we use deposited ferromagnetic insulators as contacts which give rise to spin-dependent energy spectrum and transport properties. Furthermore, we upgrade this method to form two-dimensional quantum dot arrays, whose coupling strength between neighboring dots can be uniquely anisotropic. Compared to complexity of other approaches to form quantum dot in graphene, the se

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6

Xiu, Faxian, Igor V. Ovchinnikov, Pramey Upadhyaya, et al. "Voltage-controlled ferromagnetic order in MnGe quantum dots." Nanotechnology 21, no. 37 (2010): 375606. http://dx.doi.org/10.1088/0957-4484/21/37/375606.

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7

Ramlan, Dinna G., Steven J. May, Jian-Guo Zheng, Jonathan E. Allen, Bruce W. Wessels, and Lincoln J. Lauhon. "Ferromagnetic Self-Assembled Quantum Dots on Semiconductor Nanowires." Nano Letters 6, no. 1 (2006): 50–54. http://dx.doi.org/10.1021/nl0519276.

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8

Yang, J. Y., K. S. Yoon, Y. H. Do, et al. "Ferromagnetic quantum dots formed by external laser irradiation." Journal of Applied Physics 93, no. 10 (2003): 8766–68. http://dx.doi.org/10.1063/1.1558600.

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9

Yan, Wensheng, Qinghua Liu, Chao Wang, et al. "Realizing Ferromagnetic Coupling in Diluted Magnetic Semiconductor Quantum Dots." Journal of the American Chemical Society 136, no. 3 (2014): 1150–55. http://dx.doi.org/10.1021/ja411900w.

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10

Martinek, J., Y. Utsumi, H. Imamura, J. Barnaś, S. Maekawa, and G. Schön. "Kondo effect in quantum dots coupled to ferromagnetic electrodes." Physica E: Low-dimensional Systems and Nanostructures 18, no. 1-3 (2003): 75–76. http://dx.doi.org/10.1016/s1386-9477(02)00980-3.

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