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Artykuły w czasopismach na temat „GaN/AlN/Si”

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Data publikacji: 6 września 2023

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1

Середин, П. В., К. А. Барков, Д. Л. Голощапов та ін. "Влияние предобработки подложки кремния на свойства пленок GaN, выращенных методом хлорид-гидридной газофазной эпитаксии". Физика и техника полупроводников 55, № 8 (2021): 704. http://dx.doi.org/10.21883/ftp.2021.08.51144.9660.

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Сообщается о росте методом хлорид-гидридной газофазной эпитаксии пленки GaN на предварительно обработанных кремниевых подложках Si(001) через буферный слой AlN. Продемонстрировано, что использование предложенной технологии привело к образованию в подложке Si переходного субслоя, дальнейший рост на котором обеспечил формирование столбчатых зерен GaN, между которыми находится тонкая прослойка фазы AlN. Эпитаксиальная пленка GaN имеет низкую величину остаточных напряжений, что нашло свое отражение в интенсивной люминесценции. Ключевые слова: хлорид-гидридная газофазная эпитаксия, фотолюминесценци

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2

Yang, Yibin, Lingxia Zhang, and Yu Zhao. "Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates." Crystals 10, no. 9 (2020): 772. http://dx.doi.org/10.3390/cryst10090772.

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Due to the absorption of opaque Si substrates, the luminous efficiency of GaN-based light-emitting diodes (LEDs) on Si substrates is not high. So, in this work, we insert AlN/GaN distributed Bragg reflectors (DBRs) to improve the light output of GaN-based LEDs on Si (111) substrates grown via metal organic chemical vapor deposition (MOCVD). In order to obtain the highest reflectivity of the AlN/GaN DBR stop band, the growth parameters of AlN/GaN DBRs are optimized, including the growth temperature, the V/III ratio and the growth pressure. As a consequence, the interfaces of the optimal 9-pair

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3

Кукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова та В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si". Физика твердого тела 59, № 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.

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Обнаружен эффект изменения направления распространения дислокации несоответствия при росте слоев GaN на поверхности структуры AlN/SiC/Si(111). Эффект заключается в том, что при достижении слоем GaN, растущим на AlN/SiC/Si(111) определенной толщины &#126;300 nm, дислокации несоответствия первоначально, распространяющиеся вдоль оси роста слоя останавливаются и начинают двигаться в перпендикулярном к оси роста направлению. Построена теоретическая модель зарождения AlN и GaN на грани (111) SiC/Si, объясняющая эффект изменения направления движения дислокации несоответствия. Обнаружен эксперимен

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4

Бессолов, В. Н., Е. В. Гущина, Е. В. Коненкова та ін. "Синтез гексагональных слоев AlN и GaN на Si(100)-подложке методом хлоридной газофазной эпитаксии". Журнал технической физики 89, № 4 (2019): 574. http://dx.doi.org/10.21883/jtf.2019.04.47315.152-18.

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AbstractSynthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH_4)_2S decreases the

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5

Goswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (2021): 482. http://dx.doi.org/10.3390/coatings11040482.

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We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and the crystalline quality of thin films. Films were deposited epitaxily on Si (111) with a hexagonal structure, while on the GaN/sapphire (0001) substrate, the AlN film is epitaxial and has been deposited in a metastable zinc-blende cubic phase. Transmission electron microscopy reveals that the interfa

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6

Nikishin, Sergey A., Nikolai N. Faleev, Vladimir G. Antipov, et al. "High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 467–73. http://dx.doi.org/10.1557/s1092578300004658.

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We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130−1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick ( > 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to t

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7

Tajalli, Alaleh, Matteo Borga, Matteo Meneghini, et al. "Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment." Micromachines 11, no. 1 (2020): 101. http://dx.doi.org/10.3390/mi11010101.

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We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon substrates: AlN/Si, AlGaN/AlN/Si, C:GaN/AlGaN/AlN/Si. The results demonstrate that: (i) the AlN layer grown on silicon has a breakdown field of 3.25 MV/cm, which further decreases with temperature. This value is much lower than that of highly-crystalline AlN, and the difference can be ascribed to the

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8

Follstaedt, D. M., J. Han, P. Provencio, and J. G. Fleming. "Microstructure of GaN Grown on (111) Si by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 397–402. http://dx.doi.org/10.1557/s1092578300002787.

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Gallium nitride was grown on (111) Si by MOCVD by depositing an AlN buffer at 1080°C followed by GaN at 1060°C. The 2.2 μm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were nonetheless able to examine the material between cracks with TEM. The character and arrangement of dislocations are much like those of GaN grown on Al2O3: ∼2/3 pure edge and ∼1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly misoriented with respect to neighboring material. The 30 nm AlN buffer is continuous, indicating that AlN wets th

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9

Vashishtha, Pargam, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, and Govind Gupta. "Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector." Electronic Materials 3, no. 4 (2022): 357–67. http://dx.doi.org/10.3390/electronicmat3040029.

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Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN grow

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10

Мизеров, А. М., С. А. Кукушкин, Ш. Ш. Шарофидинов та ін. "Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si". Физика твердого тела 61, № 12 (2019): 2289. http://dx.doi.org/10.21883/ftt.2019.12.48535.06ks.

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The effect of GaN polarity inversion from N- to Ga-face during the successive growth of GaN layers by plasma assisted molecular beam epitaxy and halide vapor phase epitaxy on hybrid SiC/Si(111) substrates was found. A new method of the formation of crack-free Ga-face GaN/AlN heterostructures on hybrid SiC/Si(111) substrates has been developed. In this method the two stage growth of GaN layers is used. At the first stage, the N-face GaN transition layer was grown on the SiC/Si(111) surface by plasma assisted molecular beam epitaxy. At the second stage, the AlN interlayer was first grown by hali

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11

Yamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, and Takashi Egawa. "Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates." MRS Advances 1, no. 50 (2016): 3415–20. http://dx.doi.org/10.1557/adv.2016.431.

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ABSTRACT In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial A

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12

Mao, Zhigang, Stuart McKernan, C. Barry Carter, Wei Yang, and Scott A. McPherson. "Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 179–84. http://dx.doi.org/10.1557/s1092578300002428.

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Selective lateral growth of GaN is a promising technique for producing high quality material for microelectronic and optoelectronic devices. Single-crystal GaN/AlN layers have been grown on Si(111) substrates and subsequently used as the seeding layer for selective lateral overgrowth. GaN pyramids are formed above holes patterned in a Si3N4 mask. Transmission electron microscopy (TEM, which also denotes the microscope) of these structures shows that the GaN pyramid, GaN seed layer, and AlN buffer layer in the samples have the following epitactic relationship with respect to the Si substrate: a

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13

Serban, Andreea, Vladimir Ene, Doru Dinescu, et al. "Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC." Nanomaterials 11, no. 5 (2021): 1299. http://dx.doi.org/10.3390/nano11051299.

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Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i.e., GaN/AlN/Si and GaN/AlN/Al2O3) has been carried out. W

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14

Abe, Yoshihisa, Jun Komiyama, Toshiyuki Isshiki, et al. "Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers." Materials Science Forum 600-603 (September 2008): 1281–84. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1281.

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The growth process of semipolar GaN(10-12) on Si(001) offcut substrates with 3C-SiC buffer layers has been investigated. From XRD analysis, the difference in the crystal orientation between GaN(10-12) and 3C-SiC(001) has been found to be around 8˚ toward the [110] direction of the 3C-SiC templates. From TEM observations, a cubic-phase AlN seed layer is found to grow on 3C-SiC(001) templates, and the swift transition from the cubic phase to a hexagonal phase leads to the stable growth of hexagonal nitrides. Using 8˚-offcut Si substrates, it is possible to obtain a mirror-like surface of GaN(10-

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15

Zhang, Kang, Tai Ping Lu, and Shu Ti Li. "Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate." Advanced Materials Research 306-307 (August 2011): 201–5. http://dx.doi.org/10.4028/www.scientific.net/amr.306-307.201.

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The effect of AlN buffer layer on the quality of GaN epilayer grown on Si substrate by metalorganic chemical vapor deposition (MOCVD) has been investigated. It was found that the quality of GaN epilayer strongly related with the crystal quality of AlN buffer layer. As the full width at half maximum (FWHM) of AlN (0 0 2) plane increased from 1.23 degree to 3.41 degree, the FWHM of GaN (0 0 2) plane varied from 432 arcsec to 936 arcsec and the FWHM of GaN (1 0 2) plane varied from 677 arcsec to 1226 arcsec. Besides, more cracks formed and threading dislocation (TD) density increased. The deterio

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16

Бессолов, В. Н., Е. В. Коненкова, С. Н. Родин, Д. С. Кибалов та В. К. Смирнов. "Образование полуполярных III-нитридных слоев на поверхности Si(100), структурированной с помощью самоформирующейся наномаски". Физика и техника полупроводников 55, № 4 (2021): 356. http://dx.doi.org/10.21883/ftp.2021.04.50740.9562.

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The epitaxial growth of AlN and GaN layers was studied by Metalorganic Vapor Phase Epitaxy, on a Si(100) substrate, on the surface of which a V-shaped nanostructure with sub-100 nm element size (NP-Si(100)) was formed. It is shown that a corrugated surface is formed from semipolar AlN(10-11) planes with opposite "c"axes during the formation of a semipolar AlN layer at the initial stage of epitaxy. Then, during the growth of the GaN layer, the transition from the symmetric state of two semipolar AlN planes to an asymmetric state with a single orientation of the "c"-axis of the semipolar GaN(10-

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17

Бессолов, В. Н., Е. В. Коненкова, С. Н. Родин, Д. С. Кибалов та В. К. Смирнов. "Образование полуполярных III-нитридных слоев на поверхности Si(100), структурированной с помощью самоформирующейся наномаски". Физика и техника полупроводников 55, № 4 (2021): 356. http://dx.doi.org/10.21883/ftp.2021.04.50740.9562.

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The epitaxial growth of AlN and GaN layers was studied by Metalorganic Vapor Phase Epitaxy, on a Si(100) substrate, on the surface of which a V-shaped nanostructure with sub-100 nm element size (NP-Si(100)) was formed. It is shown that a corrugated surface is formed from semipolar AlN(10-11) planes with opposite "c"axes during the formation of a semipolar AlN layer at the initial stage of epitaxy. Then, during the growth of the GaN layer, the transition from the symmetric state of two semipolar AlN planes to an asymmetric state with a single orientation of the "c"-axis of the semipolar GaN(10-

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18

Abgaryan, Karine, Ilya Mutigullin, and Dmitriy Bazhanov. "Multiscale Computational Model of Nitride Semiconductor Nanostructures." Advanced Materials Research 560-561 (August 2012): 1133–37. http://dx.doi.org/10.4028/www.scientific.net/amr.560-561.1133.

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Theoretical multiscale model of nitride semiconductor nanostructure is proposed. The model combines various computational methods such as density functional theory, molecular dynamics and kinetic Monte Carlo. As a first step of implementation of proposed approach ab initio calculations of structural and electronic properties of two different structures InN/Si and AlN/AlGaN/GaN heterostructures were carried out. In particular, the influence of oxygen on InN/Si adhesion energy was studied. AlN, GaN, AlxGa1-xN (x=0.33) spontaneous and piezoelectric polarizations as well as sheet carrier concentra

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19

Кукушкин, С. А., та Ш. Ш. Шарофидинов. "Новый метод получения объемных кристаллов AlN, GaN и AlGaN с использованием гибридных подложек SiC/Si". Физика твердого тела 61, № 12 (2019): 2338. http://dx.doi.org/10.21883/ftt.2019.12.48549.51ks.

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The paper presents the main provisions of the new method of growing bulk, with a thickness of 100 μm or more, single-crystal AlN, AlGaN and GaN films on silicon poles with a silicon carbide buffer layer with their subsequent separation from the Si substrate. The main essence of this method is the combination of the method of chloride-hydride epitaxy, which ensures high growth rates of III-nitride layers using as substrate for growth, Si substrate with a buffer layer of a nanoscale atomic SiC film. The Si substrate with a SiC layer grown by the substitution method has a number of structural, ph

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20

CHUAH, L. S., Z. HASSAN, and H. ABU HASSAN. "ELECTRICAL RESISTANCE OF CRACK-FREE GaN/AlN HETEROSTRUCTURE GROWN ON Si(111)." Journal of Nonlinear Optical Physics & Materials 17, no. 03 (2008): 299–304. http://dx.doi.org/10.1142/s021886350800424x.

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This paper presents the electrical resistance of crack-free n-GaN/AlN/n-Si(111) diodes in relation to the temperature of the Al effusion cell for the growth of AlN intermediate layer (348 nm thickness) using radio-frequency molecular beam epitaxy (RF-MBE). The thickness of the unintentionally doped n-type GaN thin film is in the range of 63–100 nm. Aluminium (300 nm thickness) was sputtered onto the n-type GaN through a metal mask, followed by the 100 nm thick titanium (Ti) capping layer to obtain an ohmic contact. The back contact was created on the back surface of the Si substrate by evapora

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21

Davis, Robert F., T. Gehrke, K. J. Linthicum, et al. "Pendeo-epitaxial Growth and Characterization of GaN and related Materials on 6H-SiC(0001) and Si(111) Substrates." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 49–61. http://dx.doi.org/10.1557/s1092578300004075.

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Discrete and coalesced monocrystalline GaN and AlxGa1−xN layers grown via Pendeoepitaxy (PE) [1] originated from side walls of GaN seed structures containing SiNx top masks have been grown via organometallic vapor phase deposition on GaN/AlN/6HSiC(0001) and GaN(0001)/AlN(0001)/3C-SiC(111)/Si(111) substrates. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films was reduced by at least five orders of magnitude relative to the initial GaN seed layers. T

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22

Mahyuddin, A., A. Azrina, M. Z. Mohd Yusoff, and Z. Hassan. "Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate." Modern Physics Letters B 31, no. 33 (2017): 1750313. http://dx.doi.org/10.1142/s0217984917503134.

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An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance–voltage (C–V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer

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23

Kim, Sang-Jo, Semi Oh, Kwang-Jae Lee, Sohyeon Kim, and Kyoung-Kook Kim. "Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption." Micromachines 12, no. 4 (2021): 399. http://dx.doi.org/10.3390/mi12040399.

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We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The p

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24

Shen, Xu-Qiang, Tokio Takahashi, Hirofumi Matsuhata, Toshihide Ide, and Mitsuaki Shimizu. "Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition." CrystEngComm 17, no. 27 (2015): 5014–18. http://dx.doi.org/10.1039/c5ce00929d.

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Бессолов, В. Н., Е. В. Коненкова та С. Н. Родин. "Начальные стадии роста слоя GaN(11\=22) на наноструктурированной подложке Si(113)". Физика и техника полупроводников 57, № 1 (2023): 3. http://dx.doi.org/10.21883/ftp.2023.01.54923.3994.

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Методом растровой электронной микроскопии изучались начальные стадии формирования полуполярного GaN(1122) слоя при эпитаксии из металлоорганических соединений на подложках Si(113), на поверхности которых сформированы U-образные канавки с размером элементов &lt;100 нм (подложка-NP-Si(113)). Установлено, что NP-Si(113) подложки с буферным слоем AlN стимулируют формирование островков, ограненных плоскостями m-GaN, c-GaN. Показано, что наблюдается преимущественный рост грани m-GaN по сравнению с c-GaN. Экспериментальные результаты соответствуют принципу отбора Гиббса--Кюри--Вульфа, но с учетом

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Arifin, Pepen, Heri Sutanto, Sugianto, and Agus Subagio. "Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer." Coatings 12, no. 1 (2022): 94. http://dx.doi.org/10.3390/coatings12010094.

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We report the growth of non-polar GaN and AlGaN films on Si(111) substrates by plasma-assisted metal-organic chemical vapor deposition (PA-MOCVD). Low-temperature growth of GaN or AlN was used as a buffer layer to overcome the lattice mismatch and thermal expansion coefficient between GaN and Si(111) and GaN’s poor wetting on Si(111). As grown, the buffer layer is amorphous, and it crystalizes during annealing to the growth temperature and then serves as a template for the growth of GaN or AlGaN. We used scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (

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Zhang, Zhenzhuo, Jing Yang, Degang Zhao, et al. "The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si." AIP Advances 12, no. 9 (2022): 095106. http://dx.doi.org/10.1063/5.0105524.

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The reaction between gallium (Ga) and silicon (Si), termed melt-back etching, greatly deteriorates the quality of GaN grown on a Si substrate. In this paper, the mechanism of melt-back etching was investigated layer-by-layer in a GaN/AlN/Si system. It is found that the environment of the reactor plays a critical role in melt-back etching, which may happen as early as during the baking process. Drawing on experimental evidence and analyses, a two-step melt-back etching model is proposed. Finally, optimized pretreatments including an AlN precoating process and reduction in baking temperature wer

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Liu, Wei-Sheng, Balaji Gururajan, Sui-Hua Wu, et al. "Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering." Micromachines 13, no. 9 (2022): 1546. http://dx.doi.org/10.3390/mi13091546.

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Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an Al sputtering target and N2 as the reactive gas. The N2 working gas flow rate was varied among 20, 30, and 40 sccm to optimize the AlN thin film growth. The optimal AlN thin film was produced with 40 sccm N2 flow at 500 W under 100% N2 gas and at 600 °C. The films were studied using X-ray diffraction and had (002) phase orientation. X-ray photoelectron spectroscopy

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Xie, Hanlin, Zhihong Liu, Wenrui Hu, et al. "AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs." Applied Physics Express 15, no. 1 (2021): 016503. http://dx.doi.org/10.35848/1882-0786/ac428b.

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Abstract AlN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of V d = 3.5 V/5 V, the 90 nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency of 62%/58%, a maximum output power density (P outmax) of 0.44 W mm−1/0.84 W mm−1 and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in situ-SiN/AlN/GaN-on-S

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Wang, Wenliang, Yunhao Lin, Yuan Li, et al. "High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates." Journal of Materials Chemistry C 6, no. 7 (2018): 1642–50. http://dx.doi.org/10.1039/c7tc04478j.

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High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al<sub>0.24</sub>Ga<sub>0.76</sub>N buffer layers and a three-dimensional (3D) GaN layer.

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Tiwari, Ashutosh, M. Park, C. Jin, H. Wang, D. Kumar, and J. Narayan. "Epitaxial growth of ZnO films on Si(111)." Journal of Materials Research 17, no. 10 (2002): 2480–83. http://dx.doi.org/10.1557/jmr.2002.0361.

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In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the Raman mode and a red shift of the band-edge photoluminescence peak due to

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CHUAH, L. S., Z. HASSAN, and H. ABU HASSAN. "INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)." Surface Review and Letters 16, no. 01 (2009): 99–103. http://dx.doi.org/10.1142/s0218625x09012354.

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High-quality aluminum nitride ( AlN ) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si . Growth using AlN buffer layers leads to Al -polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Al -rich as possible, although Al droplets tend to form. Before starting the AlN growth, a few monolayers of Al are deposited on the substrate to avoid the formation of Si 3 N 4. X-

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Roshko, Alexana, Matt Brubaker, Paul Blanchard, Todd Harvey, and Kris Bertness. "Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates." Crystals 8, no. 9 (2018): 366. http://dx.doi.org/10.3390/cryst8090366.

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Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-pol

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MOHD YUSOFF, M. Z., Z. HASSAN, C. W. CHIN, et al. "THE STUDY OF Al0.29Ga0.71N-BASED SCHOTTKY PHOTODIODES GROWN ON SILICON BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY." Modern Physics Letters B 27, no. 12 (2013): 1350085. http://dx.doi.org/10.1142/s0217984913500851.

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In this paper, the growth and characterization of epitaxial Al 0.29 Ga 0.71 N grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al 0.29 Ga 0.71 N layer on GaN / AlN / Si sample. We found

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Blumberg, C., F. Wefers, F. J. Tegude, N. Weimann, and W. Prost. "Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates." CrystEngComm 21, no. 48 (2019): 7476–88. http://dx.doi.org/10.1039/c9ce01151j.

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CHUAH, L. S., S. M. THAHAB, and Z. HASSAN. "GaN ON SILICON SUBSTRATE WITH AlN BUFFER LAYER FOR UV PHOTODIODE." Journal of Nonlinear Optical Physics & Materials 21, no. 01 (2012): 1250014. http://dx.doi.org/10.1142/s0218863512500142.

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Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and w

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Dugar, Palak, Mahesh Kumar, Shibin Krishna T. C., Neha Aggarwal, and Govind Gupta. "Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy." RSC Advances 5, no. 102 (2015): 83969–75. http://dx.doi.org/10.1039/c5ra10877b.

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Bessolov V. N., Konenkova E. V., and Rodin S. N. "Initial stages of growth of the GaN(11\=22) layer on a nano-structured Si(113) substrate." Semiconductors 57, no. 1 (2023): 3. http://dx.doi.org/10.21883/sc.2023.01.55614.3994.

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Scanning electron microscopy was used to study of the initial stages of the formation of a semipolar GaN(1122) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, on the surface of which U-shaped grooves with element sizes &lt;100 nm (NP-Si(113)) were formed. It was found that NP-Si(113) substrates with a buffer AlN layer stimulate the formation of islands faceted by the planes m-GaN, c-GaN. It is shown that there is a predominant growth of the m-GaN facet in comparison with c-GaN.The experimental results correspond to the Gibbs--Curie--Wolff selection principle, but

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Cao, X. A., S. J. Pearton, R. K. Singh, et al. "Rapid Thermal Processing of Implanted GaN up to 1500°C." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 671–77. http://dx.doi.org/10.1557/s1092578300003239.

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GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2 × 10−13 cm2. s−1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal inte

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Song, Chunyan, Xuelin Yang, Panfeng Ji, et al. "Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs." Applied Sciences 9, no. 11 (2019): 2373. http://dx.doi.org/10.3390/app9112373.

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The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0–600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0–400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a d

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Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

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We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at

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Pezoldt, Jörg, Rolf Grieseler, Thorsten Schupp, Donat J. As, and Peter Schaaf. "Mechanical Properties of Cubic SiC, GaN and AlN Thin Films." Materials Science Forum 717-720 (May 2012): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.513.

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Cubic polytypes of SiC, GaN and AlN were grown on silicon by molecular beam epitaxy. The mechanical properties of the epitaxial layers were investigated by nanoindentation. For 3C-SiC grown on Si(111) and Si(100) a dependence of the mechanical properties on the surface preparation with germanium prior to the carbonization was obtained.

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Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) p

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Wośko, Mateusz, Bogdan Paszkiewicz, Andrej Vincze, Tomasz Szymański, and Regina Paszkiewicz. "GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)." physica status solidi (b) 252, no. 5 (2015): 1195–200. http://dx.doi.org/10.1002/pssb.201451596.

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Hsu, Lung-Hsing, Yung-Yu Lai, Po-Tsung Tu, et al. "Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration." Micromachines 12, no. 10 (2021): 1159. http://dx.doi.org/10.3390/mi12101159.

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches be

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Lee, Jae-Hoon, and Jung-Hee Lee. "Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate." Advances in Materials Science and Engineering 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/290646.

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A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 12

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Bolshakov, Alexey D., Alexey M. Mozharov, Georgiy A. Sapunov, et al. "Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy." Beilstein Journal of Nanotechnology 9 (January 15, 2018): 146–54. http://dx.doi.org/10.3762/bjnano.9.17.

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In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surf

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Ene, Vladimir Lucian, Doru Dinescu, Nikolay Djourelov, et al. "Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments." Nanomaterials 10, no. 2 (2020): 197. http://dx.doi.org/10.3390/nano10020197.

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The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as positron moderators. The structure of the GaN film, AlN buffer layer, substrate, and their growth relationships were determined through high-resolution transmission electron microscopy (HR-TEM). Data resulting from high-resolution X-ray diffraction (HR-XRD) was mathematically modeled to extract dis

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Mohd Yusoff, M. Z., A. Mahyuddin, Z. Hassan, et al. "Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate." Superlattices and Microstructures 60 (August 2013): 500–507. http://dx.doi.org/10.1016/j.spmi.2013.05.034.

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Sánchez, A. M., F. J. Pacheco, S. I. Molina, et al. "AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)." Materials Science and Engineering: B 93, no. 1-3 (2002): 181–84. http://dx.doi.org/10.1016/s0921-5107(02)00030-2.

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