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Data publikacji: 7 września 2023

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1

Титов, В. В., А. А. Лисаченко, И. Х. Акопян, М. Э. Лабзовская та Б. В. Новиков. "Долгоживущие центры фотокатализа, создаваемые в ZnO резонансным возбуждением экситона". Физика твердого тела 61, № 11 (2019): 2158. http://dx.doi.org/10.21883/ftt.2019.11.48422.537.

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Along with TiO_2, ZnO is the main photocatalyst for a wide class of redox reactions used to convert light energy into chemical and for environmental cleanup. It has been shown that the creation in ZnO of surface intrinsic defects in ZnO i.e. vacancies in the anionic and cationic sublattices (F-type and V-type centers) - makes it possible to create long-lived (up to 10^3 s) photocatalysis centers and thus fundamentally (tens of times) to increase the quantum yield of reactions. Slow surface states — photocatalysis centers — are created by the diffusion of electrons and holes generated during in
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2

Shokuhfar, Ali, Javad Samei, A. Esmaielzadeh Kandjani, and Mohammad Reza Vaezi. "Synthesis of ZnO Nanoparticles via Sol-Gel Process Using Triethanolamine as a Novel Surfactant." Defect and Diffusion Forum 273-276 (February 2008): 626–31. http://dx.doi.org/10.4028/www.scientific.net/ddf.273-276.626.

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Current researches show a growing interest in Zinc Oxide (ZnO) nanoparticles. ZnO is a semiconductor with a wide direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. Several methods have been developed in order to synthesize ZnO nanoparticles. Chemical methods, among them sol-gel process, are more convenient. Sol-gel is common for producing metal oxide nanoparticles because of its simplicity, cheapness and high quality products. In this research ZnO nanoparticles were prepared via the sol-gel process. ZnAc2.2H2O as precursor and TEA (Triethanolamine) as
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3

TNEH, S. S., H. ABU HASSAN, K. G. SAW, F. K. YAM, and Z. HASSAN. "STRUCTURAL AND OPTICAL PROPERTIES OF LARGE-SCALE ZnO NANOWIRES AND NANOSHEETS PREPARED BY DRY THERMAL OXIDATION." Surface Review and Letters 16, no. 06 (2009): 901–4. http://dx.doi.org/10.1142/s0218625x09013451.

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In this work, we report the morphology and optical properties of zinc oxide ( ZnO ) layers prepared by dry thermal oxidation at different annealing conditions. Morphology studies using scanning electron microscope (SEM) show that the amount of nanowires and nanosheets increases with the introduction of a flow of O2 gas. High-resolution X-ray diffraction (HR-XRD) data show that typical polycrystalline ZnO nanostructure layers have been deposited. Near-perfect stoichiometry of Zn and O atom vacancies has been observed from energy dispersion spectroscopy (EDS) spectrum. Photoluminescence (PL) spe
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4

Truong, Vo Doan Thanh, Thi Thanh Truc Nguyen, Thanh Lan Vo, Hoang Trung Huynh, and Thi Kim Hang Pham. "Effects of Growth Temperature on Morphological and Structural Properties of ZnO Films." Journal of Technical Education Science, no. 72A (October 28, 2022): 39–44. http://dx.doi.org/10.54644/jte.72a.2022.1238.

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Zinc oxide (ZnO) is one of the most promising oxide possibilities for use in a number of industries due to its unique properties. Because of its broad direct bandgap (3.37 eV) and strong exciton binding energy (60 meV) at ambient temperature, ZnO not only conducts electricity well but also transmits visible light and emits UV light. Here, we investigated the effect of growth temperature on ZnO thin films by changing the growth temperatures from 400 oC to 450 oC. Radio-frequency (RF) magnetron sputtering was used to create ZnO thin films on Si(100) substrates. The atomic force microscopy (AFM)
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5

Zayana, N. Y., and M. Rusop. "Synthesis of ZnO Complex Structures at Different Molar Ratio of Zn (NO3)2 and KOH by Precipitation Method." Advanced Materials Research 576 (October 2012): 330–33. http://dx.doi.org/10.4028/www.scientific.net/amr.576.330.

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ZnO as a semiconductor with wide direct band gap (3.37 eV) and high exciton binding energy of 60 meV. It has attracted in several applications such as solar cells, field emission, sensor, etc. In this study, different ZnO complex structures were prepared by precipitation method at different molar ratio. Zinc nitrate as zinc source, potassium hydroxide as precipitating agent and sodium dodecly sulphate as surfactant were used to synthesis the ZnO. The effect of different molar ratio on the morphology and size of final product have been investigated. The final products were characterized by X-ra
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6

Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other p
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7

Que, Miaoling, Chong Lin, Jiawei Sun, Lixiang Chen, Xiaohong Sun, and Yunfei Sun. "Progress in ZnO Nanosensors." Sensors 21, no. 16 (2021): 5502. http://dx.doi.org/10.3390/s21165502.

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Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic met
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8

Tran, Thi Ha, Thi Huyen Trang Nguyen, Manh Hong Nguyen, et al. "Synthesis of ZnO/Au Nanorods for Self Cleaning Applications." Journal of Nanoscience and Nanotechnology 21, no. 4 (2021): 2621–25. http://dx.doi.org/10.1166/jnn.2021.19110.

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Zinc oxide (ZnO) is a well-known semiconductor with valuable characteristics: wide direct band gap of ˜3.3 eV, large exciton binding energy of 60 meV at room temperature, high efficient photocatalyst, etc. which have been applied in many fields such as optical devices (LEDs, laser), solar cells and sensors. Besides, various low dimensional structures of ZnO in terms of nanoparticles, nanorods, nanoneedles, nanotetrapods find applications in technology and life. This material is also appealing due to the diversity of available processing methods including both chemical and physical approaches s
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9

Kim, Dong Chan, Bo Hyun Kong, Young Yi Kim, Hyung Koun Cho, Jeong Yong Lee, and Dong Jun Park. "Effect of Buffer Thickness on the Formation of ZnO Nanorods Grown by MOCVD." Solid State Phenomena 124-126 (June 2007): 101–4. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.101.

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ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at 400 °C and their effect on
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10

Das, S., S. Sultana, I. Akter, SC Mazumdar, MA Rahman, and K. Kali. "Impact of Thickness and Substrate on Optical Properties of Zno Thin Films." Bangladesh Journal of Physics 27, no. 1 (2020): 59–68. http://dx.doi.org/10.3329/bjphy.v27i1.49726.

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During the last decades, ZnO has emerged as the most promising material in optoelectronic and optical applications in the visible region as well as in the infrared and UV region. It is because of the broad direct band gap of 3.37 eV at ambient temperature and high exciton binding energy of 60 meV allowing it to utilize the ultraviolet region. In this investigation, the optical characteristics of ZnO thin film of various thicknesses (300 nm, 600 nm, 900 nm) deposited on Quartz, Fused silica and Sapphire have been studied as a function of wavelength and photon energy. To obtain this, the equatio
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11

Zolfaghari, Mahmoud, and Mahshid Chireh. "Effect of Mn Dopant on Lattice Parameters and Band Gap Energy of Semiconductor ZnO Nanoparticles." Advanced Materials Research 829 (November 2013): 784–89. http://dx.doi.org/10.4028/www.scientific.net/amr.829.784.

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ZnO belongs to the II-VI semiconductor group with a direct band-gap of 3.2-3.37 eV in 300K and a high exciton binding energy of 60 meV. It has good transparency, high electron mobility, wide, and strong room-temperature luminescence. These properties have many applications in a wide area of emerging applications. Doping ZnO with the transition metals gives it magnetic property at room temperature hence making it multifunctional material, i.e. coexistence of magnetic, semiconducting and optical properties. The samples can be synthesized in the bulk, thin film, and nanoforms which show a wide ra
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12

Zhang, Lei, Liang Heng Wang, Ming Kai Li, Xun Zhong Shang, and Yun Bin He. "Structural and Optical Properties of ZnO1-xSx Thin Films Grown by Pulse Laser Deposition on Glass Substrates." Materials Science Forum 787 (April 2014): 18–22. http://dx.doi.org/10.4028/www.scientific.net/msf.787.18.

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With a wide band gap of 3.4 eV and a large exciton binding energy of 60 meV at room temperature, ZnO is attractive for blue and ultra-violet optoelectronic devices, and transparent conducting oxide films for photovoltaic applications. For a semiconductor to be useful, particularly in reference to optoelectronic devices, band gap engineering is of great importance in device development. Alloying of MgO and CdO with ZnO has been studied extensively in comparison to other ZnO alloys incorporating equivalent anions like ZnO1-xSx (ZnOS). In this work, high-quality ZnOS thin films were grown on glas
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13

Singh, Nagendra Pratap, S. A. Shivashankar, and Rudra Pratap. "Defect Driven Emission from ZnO Nano Rods Synthesized by Fast Microwave Irradiation Method for Optoelectronic Applications." MRS Proceedings 1633 (2014): 75–80. http://dx.doi.org/10.1557/opl.2014.254.

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ABSTRACTBecause of its large direct band gap of 3.37 eV and high exciton binding energy (∼60 meV), which can lead to efficient excitonic emission at room temperature and above, ZnO nanostructures in the würtzite polymorph are an ideal choice for electronic and optoelectronic applications. Some of the important parameters in this regard are free carrier concentration, doping compensation, minority carrier lifetime, and luminescence efficiency, which are directly or indirectly related to the defects that, in turn, depend on the method of synthesis. We report the synthesis of undoped ZnO nanorods
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14

Mahendra, Robert, Mariesta Arianti, Dyah Sawitri, and Doty Dewi Risanti. "Synthesis of Various ZnO Nanotree Morphologies through PEG-Assisted Co-Precipitation Method." Advanced Materials Research 1112 (July 2015): 66–70. http://dx.doi.org/10.4028/www.scientific.net/amr.1112.66.

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ZnO, with direct wide band gap of 3.37 eV and high excitonic binding energy of 60 meV has been attracting much attention due to its wide range of applications, for transparent electronics, solar cells, and other optoelectronics device. We present a simple, single step process to produce ZnO nanotrees using co-precipitation method. As a precursor, zinc nitrate dehydrate was stabilized by hexamethylene tetraamine (HMTA) and 3-9 mM polyethylene glycol (PEG) was added at 180°C for 3-6 hours followed by residual polymer removal. Scanning Electron Microscopy revealed the typical rod-like branched na
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15

Ong, Si Ci, Usman Ilyas, and Rajdeep Singh Rawat. "Nanofabrication using home-made RF plasma coupled chemical vapour deposition system." International Journal of Modern Physics: Conference Series 32 (January 2014): 1460342. http://dx.doi.org/10.1142/s2010194514603421.

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Zinc oxide, ZnO , a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coa
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16

Abdullahi, Sabiu Said, Garba Shehu Musa Galadanci, Norlaily Mohd Saiden, and Josephine Ying Chyi Liew. "Assessment of Magnetic Properties between Fe and Ni Doped ZnO Nanoparticles Synthesized by Microwave Assisted Synthesis Method." Solid State Phenomena 317 (May 2021): 119–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.317.119.

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The emergence of Dilute Magnetic Semiconductors (DMS) with a potentials for spintronic application have attracted much researches attention, special consideration has been given to ZnO semiconductor material due to its wide band gap of 3.37 eV, large exciting binding energy of 60 meV, moreover, its ferromagnetic behavior at room temperature when doped with transition metals. MxZn1-xO (M = Fe or Ni) nanoparticles were synthesized by microwave assisted synthesis method calcined at 600°C. The structural, morphological and magnetic properties of these nanoparticles were studied using X-ray Diffrac
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17

Verma, K. C., Navdeep Goyal, and R. K. Kotnala. "Lattice defect-formulated ferromagnetism and UV photo-response in pure and Nd, Sm substituted ZnO thin films." Physical Chemistry Chemical Physics 21, no. 23 (2019): 12540–54. http://dx.doi.org/10.1039/c9cp02285f.

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The induction of charge and spin in diluted magnetic semiconductor ZnO is explored for spintronic devices and its wide direct band gap (3.37 eV) and large exciton binding energy (60 meV) exhibit potential in UV photodetectors.
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18

Агекян, В. Ф., А. Ю. Серов та Н. Г. Философов. "Оптические спектры кристаллов GaSe и GaS различной толщины". Физика твердого тела 60, № 6 (2018): 1211. http://dx.doi.org/10.21883/ftt.2018.06.46002.348.

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AbstractThe transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The quantum-size shifts of exciton resonances in thin GaSe samples are as high as 12 meV, which is close to the exciton binding energy. The high-energy interband transitions in GaSe and GaS are observed near 3.4 and 3.7 eV, respectively.
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19

Tsybeskov, Leonid. "Nanocrystalline Silicon for Optoelectronic Applications." MRS Bulletin 23, no. 4 (1998): 33–38. http://dx.doi.org/10.1557/s0883769400030244.

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Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton
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20

Li, Teng, Hong Liang Pan, and Shi Liang Yang. "Simulation of Optical Properties of Ni-Doped ZnO Based on Density Functional Theory." Advanced Materials Research 846-847 (November 2013): 1931–34. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.1931.

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The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV).Based on first-principles spin-density functional calculations, the electronic structures and reflectivity of pure ZnO have been calculated. We find that theory calculated peaks basal consistent with the experiment results. The absorbing properties of Ni doped ZnO have also been calculated and the relationships between electronic structures and absorbing properties are investigated. The results show that the absorbing properties of Co doped ZnO improved s
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21

Qaid, Saif M. H., Hamid M. Ghaithan, Huda S. Bawazir, and Abdullah S. Aldwayyan. "Surface Passivation for Promotes Bi-Excitonic Amplified Spontaneous Emission in CsPb(Br/Cl)3 Perovskite at Room Temperature." Polymers 15, no. 9 (2023): 1978. http://dx.doi.org/10.3390/polym15091978.

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Perovskite-type lead halides exhibit promising performances in optoelectronic applications, for which lasers are one of the most promising applications. Although the bulk structure has some advantages, perovskite has additional advantages at the nanoscale owing to its high crystallinity given by a lower trap density. Although the nanoscale can produce efficient light emission, its comparatively poor chemical and colloidal stability limits further development of devices based on this material. Nevertheless, bulk perovskites are promising as optical amplifiers. There has been some developmental
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22

Skromme, B. J., and G. L. Martinez. "Optical Activation Behavior of Ion Implanted Acceptor Species in GaN." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 507–13. http://dx.doi.org/10.1557/s1092578300004701.

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Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300 °C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable tempera
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23

Kutrowska-Girzycka, J., E. Zieba-Ostój, D. Biegańska, et al. "Exploring the effect of dielectric screening on neutral and charged-exciton properties in monolayer and bilayer MoTe2." Applied Physics Reviews 9, no. 4 (2022): 041410. http://dx.doi.org/10.1063/5.0089192.

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Dielectric engineering of heterostructures made from two-dimensional van der Waals semiconductors is a unique and powerful tool to tailor the electric and optical band gaps solely via the dielectric environment and the crystal thickness modulation. Here, we utilize high quality MoTe2 monolayer and bilayer crystals as a candidate for near-infrared photonic applications. The crystals are exfoliated on various technologically relevant carrier substrates: silicon/silicon dioxide, poly(methyl methacrylate), hexagonal boron nitride, silicon carbide, and silicon nitride. These substrates provide a la
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24

HIRAI, T., K. EDAMATSU, T. ITOH, Y. HARADA, and S. HASHIMOTO. "EXCITONS IN COLLOIDAL CuI PARTICLES DISPERSED IN A KI CRYSTAL." International Journal of Modern Physics B 15, no. 28n30 (2001): 3789–92. http://dx.doi.org/10.1142/s0217979201008676.

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We have investigated the luminescence spectra of colloidal CuI particles dispersed in a KI crystal under low- and high-density excitations of the CuI particles at low temperatures. Under the low-density excitation, we have observed the luminescence of both confined and bulk-like exciton transitions in the CuI particles with zincblende and two kinds of hexagonal structures. In the bulk-like particles with the zincblende structure, the emission line of bound excitons with small binding energy of ~5 meV has been recognized. The biexciton luminescence has been observed under the high-density excit
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25

Sun, Bosong, Wenjin Zhao, Tauno Palomaki, et al. "Evidence for equilibrium exciton condensation in monolayer WTe2." Nature Physics 18, no. 1 (2021): 94–99. http://dx.doi.org/10.1038/s41567-021-01427-5.

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AbstractWe present evidence that the two-dimensional bulk of monolayer WTe2 contains electrons and holes bound by Coulomb attraction—excitons—that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K, the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be accounted for if electrons and holes interact strongly and are paired in equilibrium. Our calculations from first principles s
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26

He, Fuli, Jia Li, Linyang Li, et al. "Quasiparticle band structures and optical properties of twisted bilayer MoS2." Europhysics Letters 136, no. 1 (2021): 17001. http://dx.doi.org/10.1209/0295-5075/ac35b9.

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Abstract A twist angle between two adjacent layers is a key approach to adjust the electronic characteristics of the van der Waals bilayer. The main goal of this study is to accurately predict the quasiparticle band structures and optical properties of bilayer MoS2 with different twist angles , 13.17°, 21.79°, 32.10°, and 60°) by using many-body perturbation G 0 W 0 theory and by solving the Bethe-Salpeter equation including excitonic effects on top of the partially G 0 W 0 calculation when spin-orbit coupling is included. Results of band structures and optical absorption spectrum show that th
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27

Lakshmi, R. Radha, D. Sruthi, K. Prithiv, S. Harippriya, and K. R. Aranganayagam. "Synthesis of ZnO and Ag/ZnO Nanorods: Characterization and Synergistic In Vitro Biocidal Studies." Advanced Science Letters 24, no. 8 (2018): 5490–95. http://dx.doi.org/10.1166/asl.2018.12135.

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The ZnO semiconductor has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) and direct wide band gap (3.72 eV). ZnO and Ag doped ZnO (Agx Zn1−xO (where x = 0.01, 0.02 and 0.03)) were synthesized by using soft chemical route. The synthesized materials were characterized by using XRD, HRSEM, EDS and HRTEM. The powder XRD pattern indicates that the ZnO and Agx Zn1−xO (where x = 0.01, 0.02 and 0.03) samples exhibits hexagonal wurtzite structure and also the Ag doping decreases the grain size of ZnO nano particles. The micro structura
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28

Al-Ani, Ibrahim A. M., Khalil As’Ham, Lujun Huang, Andrey E. Miroshnichenko, and Haroldo T. Hattori. "Enhanced strong coupling of WSe2 monolayer by Bound State in the continuum." Journal of Physics: Conference Series 2172, no. 1 (2022): 012009. http://dx.doi.org/10.1088/1742-6596/2172/1/012009.

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Abstract Due to the large binding energy and direct bandgap, transition-metal dichalcogenides (TMDCs) monolayers have been considered a perfect platform for realising strong coupling at room temperature. It is well established that the quality factor (Q-factor) plays a crucial role in enhancing strong coupling. In this work, we demonstrate the improved strong coupling between the exciton of the WSe2 monolayer and the high Q cavity resonance based on symmetry protected magnetic dipole (MD) bound state in the continuum (BIC). We have found that the Rabi-splitting of the strongly coupled system c
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29

Ren, Yinjuan, Zhigao Huang, and Yue Wang. "Dynamic and giant bandgap renormalization dictates the transient optical response in perovskite quantum dots." Applied Physics Letters 121, no. 25 (2022): 251103. http://dx.doi.org/10.1063/5.0131286.

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Transient optical response in perovskite quantum dots (QDs) has remained elusive until now, which hinders their full utilization in optoelectronics. Herein, we reveal that the bandgap renormalization (BGR) dictates the main spectral and dynamical features of transient response in CsPbBr3 QDs. By monitoring the absorption spectral evolution of the monodispersed QDs, the representative BGR is explicitly observed, giving rise to the photoinduced absorption at the higher energy side of the lowest exciton peak in transient absorption spectroscopy. The BGR gradually increases upon photoexcitation as
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30

Du, Aochen, Wenxiao Zhao, Yu Peng, et al. "Cs(Pb,Mn)Br3 Quantum Dots Glasses with Superior Thermal Stability for Contactless Electroluminescence Green−Emitting LEDs." Nanomaterials 13, no. 1 (2022): 17. http://dx.doi.org/10.3390/nano13010017.

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CsPbX3 (X = Cl, Br or I) perovskite quantum dots (PQDs) have gained increasing interest due to their superior performance in photoelectric applications. In our work, a series of Mn2+ doped CsPbBr3 PQDs were successfully prepared in glasses by melt quenching and in situ crystallization technique. Due to the 4T1 (4G)→6A1 (6S) transition of Mn2+, a slight red shift from 510 nm to 516 nm was found, with the FWHM expansion from 18 nm to 26 nm. The PQDs@glasses showed excellent thermal stability, and the exciton binding energy reached a high level of 412 meV. The changes of the electronic structure
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Su, Rui, Jun Wang, Jiaxin Zhao, et al. "Room temperature long-range coherent exciton polariton condensate flow in lead halide perovskites." Science Advances 4, no. 10 (2018): eaau0244. http://dx.doi.org/10.1126/sciadv.aau0244.

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Novel technological applications significantly favor alternatives to electrons toward constructing low power–consuming, high-speed all-optical integrated optoelectronic devices. Polariton condensates, exhibiting high-speed coherent propagation and spin-based behavior, attract considerable interest for implementing the basic elements of integrated optoelectronic devices: switching, transport, and logic. However, the implementation of this coherent polariton condensate flow is typically limited to cryogenic temperatures, constrained by small exciton binding energy in most semiconductor microcavi
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Yang, Feng, Kui Ying Li, Jing Zhi Sun, Mang Wang, Gang Wu, and Yong Zhao. "Direct Measurement and Identification of Nonradiative Processes in ZnO Nanocrystallines by Combining Photoacoustic Spectroscopy with Surface Photovoltage Spectroscopy." Advanced Materials Research 361-363 (October 2011): 831–39. http://dx.doi.org/10.4028/www.scientific.net/amr.361-363.831.

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Nonradiative transitions (NRTs) are relaxation processes competing with radiative process. In light emitting diodes and room temperature laser devices, NRTs lower the emission efficiency. In order to prohibit these processes, better understanding is practically needed. But nowadays knowledge of NRTs comes from the analyses of the steady-state and time-resolved photoluminescence spectra, which are indirect evidences because of their radiative nature. Here we report a direct detection of nonradiative processes of ZnO nanocrystallines by combination of photoacoustic spectroscopy (PAS) with field-
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Chi, Le Ha, Pham Duy Long, Hoang Vu Chung, et al. "Galvanic-Cell-Based Synthesis and Photovoltaic Performance of ZnO-CdS Core-Shell Nanorod Arrays for Quantum Dots Sensitized Solar Cells." Applied Mechanics and Materials 618 (August 2014): 64–68. http://dx.doi.org/10.4028/www.scientific.net/amm.618.64.

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Zinc oxide (ZnO) is recognized as one of the most attractive metal oxides because of its direct wide band gap (3.37 eV) and large exciton binding energy (60 meV), which make it promising for various applications in solar cells, gas sensors, photocatalysis and so on. Here, we report a facile synthesis to grow well-aligned ZnO nanorod arrays on SnO2: F (FTO) glass substrates without the ZnO seed layer using a Galvanic-cell-based method at low temperature (<100°C). CdS quantum dot thin films were then deposited on the nanorod arrays in turn by an effective successive ionic layer adsorption and
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Badran, Rashad I., Yas Al-Hadeethi, Ahmad Umar, et al. "Temperature-dependent heterojunction device characteristics of n-ZnO nanorods/p-Si assembly." Materials Express 10, no. 1 (2020): 29–36. http://dx.doi.org/10.1166/mex.2020.1595.

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Heterojunction diode based on n-ZnO nanorods/p-Silicon (Si) assembly was fabricated, examined and reported here. Horizontal quartz tube thermal evaporation technique was used for the growth of ZnO nanorods on Si substrate. The nanorods were characterized by several techniques to examine the structural, morphological, scattering and electrical properties. Wurtzite hexagonal phase of the grown aligned nanorods was observed using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The appearance of a sharp Raman peak at 438 cm–1 was observed and it is related to the E2(high) mode of t
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Sharma, Rakesh Kumar, Sandeep Patel, and Kamlesh Chandra Pargaien. "Mn-Doped ZnO Micro and Nanocrytals: Synthesis, Characterization and Properties." Advanced Materials Research 665 (February 2013): 182–88. http://dx.doi.org/10.4028/www.scientific.net/amr.665.182.

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The development of highly sensitive, selective, reliable, low power and compact sensing devices to detect gas is of major importance for terrestrial and space applications. The gas response to different gases and chemicals is related to a great extent to the surface state and morphology of the materials. Zinc oxide (ZnO) is a direct wide band gap semiconductor with an energy gap of ~3.37 eV and a large exciton binding energy of ~60 meV at room temperature (RT) is a promising candidate for functional component for devices and materials in chemical and gas sensors and so on. ZnO nanostructures w
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Kim, Yun Hae, Jin Woo Lee, Riichi Murakami, Dong Myung Lee, Jin Cheol Ha, and Pang Pang Wang. "Effect of Atmosphere Temperature on Physical Properties of ZnO/Ag/ZnO on PET Films." Advanced Materials Research 988 (July 2014): 125–29. http://dx.doi.org/10.4028/www.scientific.net/amr.988.125.

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Transparent conductive layers on flexible substrates are important components of today’s optoelectronic technology. They are used in filters for plasma displays, low-e windows, solar cells, etc. At present, in-doped indium oxide (ITO) layers on PET substrate is the predominant transparent conducting oxide film in diverse practical applications. However, ITO is a relatively expensive material because indium is not abundant, but aluminum-doped zinc oxide (AZO) film is emerging as an alternative potential candidate to ITO thin film due to its abundance as a raw material, nontoxic nature, cost-eff
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Sun, Ya Juan, and Wan Xing Wang. "Optical and Electrical Properties of P-Type N-Doped ZnO Film." Key Engineering Materials 609-610 (April 2014): 113–17. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.113.

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Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and sta
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Rabiee, Navid, Mojtaba Bagherzadeh, Amir Mohammad Ghadiri, et al. "Green Synthesis of ZnO NPs via Salvia hispanica: Evaluation of Potential Antioxidant, Antibacterial, Mammalian Cell Viability, H1N1 Influenza Virus Inhibition and Photocatalytic Activities." Journal of Biomedical Nanotechnology 16, no. 4 (2020): 456–66. http://dx.doi.org/10.1166/jbn.2020.2916.

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Among different forms of metallic nanoparticles (NPs), zinc oxide (ZnO) NPs with a very special bandgap of 3.37 eV and considerable binding energy of excitation (60 meV at room temperature), have been classified as high-tech nanoparticles. This study aimed to synthesize ZnO NPs using the extract from Salvia hispanica leaves. The synthesized nanoparticles were fully characterized and the photocatalytic activity was evaluated through the degradation of methylene blue. Additionally, the potential in vitro biological activities of such ZnO NPs in terms of their antibacterial activity were determin
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Dawka, Sahil, Pengjun Duan, Raju Sapkota, and Chris Papadopoulos. "Thin Film Photodetectors Based on Zinc Oxide Nanoinks." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1329. http://dx.doi.org/10.1149/ma2022-01311329mtgabs.

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Zinc oxide (ZnO) has many useful properties for electronics and optoelectronics including wide band gap, large exciton binding energy, low-cost, ease of processing and availability [1]. This has led to increased interest and development of thin film electronics, transparent conductors, solar cells, light-emitting diodes, lasers, photodetectors and various sensors based on ZnO materials [2, 3]. The high surface areas and tunable properties of ZnO nanostructures make them particularly suitable for applications such as sensing and photonic devices [4, 5]. In this work, we present results on nanos
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40

Wei, M., D. Zhi, and J. L. MacManus-Driscoll. "Self Seeded ZnO Nanowire Growth by Ultrasonic Spray Assisted Chemical Vapour Deposition." MRS Proceedings 879 (2005). http://dx.doi.org/10.1557/proc-879-z10.2.

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AbstractZnO, which exhibits a direct bandgap of 3.37 eV at room temperature with a large exciton binding energy of 60 meV,is of considerable technological importance because of its potential use in short-wavelength devices, such as ultraviolet (UV) light-emitting diodes and laser diodes. The fabrication and application of 1-D ZnO nanostructures has attracted considerable interest in recent years. In this work, we produced single crystal nanowires of zinc oxide using a novel self-seeded growth using ultrasonic spray assisted chemical vapour deposition, in which a nanocrystalline seed layer was
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Tagliente, Maria Antonella, Marcello Massaro, Giovanni Mattei, et al. "On the Structural and Optical Properties of ZnO Nanoparticles Formed in Silica by Ion Implantation." MRS Proceedings 942 (2006). http://dx.doi.org/10.1557/proc-0942-w08-36.

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ABSTRACTZinc Oxide (ZnO) is a II-VI semiconductor material with a wide direct band-gap of 3.37 eV at room temperature (RT). In the past decades, the material has been used for a variety of applications such as gas sensors, surface acoustic wave devices, or transparent contacts. Recently, ZnO has gained a new substantial interest primarily because to its potentialities for optoelectronic and spintronic applications. The renewed interest has been fueled by the availability of high-quality bulk substrates, reports of p-type conduction and theoretical predictions of its ferromagnetic behavior at r
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42

Rebane, Y. T., Y. G. Shreter, and M. Albrecht. "Excitons Bound to Stacking Faults in Wurtzite GaN." MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-179.

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ABSTRACTA model of the exciton bound to stacking faults (SF) in GaN is suggested. It is shown that SFs are potential wells (depth ∼ 120 meV) for electrons and potential barriers (∼ 60 meV) for holes. The binding energy of the exciton at stacking faults is estimated as 30 − 60 meV. The 364 nm line in GaN photoluminescence is attributed to excitons at stacking faults.
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43

Wang, Jian, Daniel Moses, Alan J. Heeger, N. Kirova, and S. Brazovski. "Electric Field Induced Ionization of the Exciton in Poly(Phenylene Vinylene)." MRS Proceedings 660 (2000). http://dx.doi.org/10.1557/proc-660-jj2.10.

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ABSTRACTThe exciton binding energy (Eb) and the band gap energy (Eg) of poly(phenylene vinylene), PPV, have been determined by photoconductivity excitation profile spectroscopy as a function of light polarization, applied electric field, and temperature. The spectral signature of the exciton is a narrow peak (100 meV full width at half maximum) that emerges just below the band edge upon increasing the external field, the temperature or the defect density. The exciton peak is observed only for light polarized parallel to the chain axis. The exciton binding energy is obtained from the energy of
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Panda, Nihar Ranjan, and Dojalisa Sahu. "Exhibition of novel photocatalytic activity and photoluminescence properties with high inhibition towards bacterial growth by hydrothermally grown ZnO nanorods." Current Nanoscience 16 (July 28, 2020). http://dx.doi.org/10.2174/1573413716999200728175722.

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Background: Metal oxide nanomaterial such as; ZnO shows novel structural, optical, electrical and antibacterial properties due to wide band gap (3.37 eV) and high excitonic binding energy (60 meV). Probing these inherent properties of nanosized ZnO with different morphology has generated new interest among researchers Objective: To investigate the size dependent functional attributes, ZnO nanorods were prepared by hydrothermal method and the photocatalytic (PC) efficiency was studied. The photoluminescence (PL) property of ZnO nanorods was also studied by recording the emission spectrum under
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45

Jung, Eilho, Jin Cheol Park, Yu-Seong Seo, Ji-Hee Kim, Jungseek Hwang, and Young Hee Lee. "Unusually large exciton binding energy in multilayered 2H-MoTe2." Scientific Reports 12, no. 1 (2022). http://dx.doi.org/10.1038/s41598-022-08692-1.

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AbstractAlthough large exciton binding energies of typically 0.6–1.0 eV are observed for monolayer transition metal dichalcogenides (TMDs) owing to strong Coulomb interaction, multilayered TMDs yield relatively low exciton binding energies owing to increased dielectric screening. Recently, the ideal carrier-multiplication threshold energy of twice the bandgap has been realized in multilayered semiconducting 2H-MoTe2 with a conversion efficiency of 99%, which suggests strong Coulomb interaction. However, the origin of strong Coulomb interaction in multilayered 2H-MoTe2, including the exciton bi
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Wang, Jue, Christina Manolatou, Yusong Bai, James Hone, Farhan Rana, and Xiaoyang Zhu. "Disorder of Excitons and Trions in Monolayer MoSe2." Journal of Chemical Physics, September 19, 2022. http://dx.doi.org/10.1063/5.0108001.

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The optical spectra of transition metal dichalcogenide (TMDC) monolayers are dominated by excitons and trions. Here we establish the dependences of these optical transitions on disorder from hyperspectral imaging of h-BN encapsulated monolayer MoSe2. While both exciton and trion energies vary spatially, these two quantities are almost perfectly correlated, with spatial variation in the trion binding energy of only ~0.18 meV. In contrast, variation in the energy splitting between the two lowest energy exciton states is one order of magnitude larger at ~1.7 meV. Statistical analysis and theoreti
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47

Skromme, B. J., J. Jayapalan, D. Wang, and O. F. Sankey. "Magnetoluminescence and Resonant Electronic Raman Scattering Investigation of Donors and Excitons in Hydride Vpe and Mocvd GaN." MRS Proceedings 482 (1997). http://dx.doi.org/10.1557/proc-482-537.

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AbstractThe donor and exciton states in ultra high-quality heteroepitaxial GaN grown by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD) on sapphire substrates are investigated using low temperature photoluminescence (PL), reflectance, magnetospectroscopy in fields up to 12 T, and resonant electronic Raman scattering (RERS). The A free exciton is confirmed to have a binding energy of about 26.4 meV, independent of strain in the material. Bound n=2 exciton peaks are distinguished in the PL spectrum by their thermalization and sample dependence. The Si donor
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Skromme, B. J. "Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride." MRS Internet Journal of Nitride Semiconductor Research 4, no. 1 (1999). http://dx.doi.org/10.1557/s1092578300000715.

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Optical spectroscopy, including low and room temperature photoluminescence (PL), reflectance, PL measurements in high magnetic fields up to 12 T, and resonantly-enhanced electronic Raman scattering (RERS) in zero and high magnetic field, has been used to investigate exciton and impurity states and surface recombination in high quality heteroepitaxial GaN grown on sapphire and SiC. Theoretical finite-difference calculations of the donor states as a function of magnetic field have been carried out for comparison, including the effects of anisotropy in the effective mass and dielectric constant.
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Wang, Fanjie, Chong Wang, Andrey Chaves, et al. "Prediction of hyperbolic exciton-polaritons in monolayer black phosphorus." Nature Communications 12, no. 1 (2021). http://dx.doi.org/10.1038/s41467-021-25941-5.

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AbstractHyperbolic polaritons exhibit large photonic density of states and can be collimated in certain propagation directions. The majority of hyperbolic polaritons are sustained in man-made metamaterials. However, natural-occurring hyperbolic materials also exist. Particularly, natural in-plane hyperbolic polaritons in layered materials have been demonstrated in MoO3 and WTe2, which are based on phonon and plasmon resonances respectively. Here, by determining the anisotropic optical conductivity (dielectric function) through optical spectroscopy, we predict that monolayer black phosphorus na
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Chu, Zihao, Huanqing Chen, Xinrui Mao, Yanping Li, Wanjin Xu, and Guang Zhao Ran. "Anisotropic Exciton-Polaritons in 2D Single-Crystalline PEA2PbBr4 Perovskites at Room Temperature." Journal of Physics D: Applied Physics, January 31, 2023. http://dx.doi.org/10.1088/1361-6463/acb783.

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Abstract Two-dimensional (2D) single-crystalline perovskites are a suitable material for investigating the strong exciton-photon interaction due to the large exciton binding energy. Here, we in-situ grow high-quality 2D single-crystalline PEA2PbBr4 thin film in-between a pair of distributed Bragg reflectors (DBRs) and construct an anisotropic exciton-polariton microcavity. The clear evidence for strong exciton-photon coupling is observed and represented by a large coupling strength of 211.8 meV. The observed TE-TM splitting at the point where in-plane wave vector is zero indicates the crystal
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