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Artykuły w czasopismach na temat „IGBT Diode”

Autor: Grafiati

Data publikacji: 3 czerwca 2025

Data aktualizacji: 31 lipca 2025

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1

Hobart, Karl D., Eugene A. Imhoff, Fritz J. Kub, et al. "Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT." Materials Science Forum 717-720 (May 2012): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.941.

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The performance of Junction Barrier Schottky (JBS) diodes developed for medium voltage hard-switched Naval power conversion is reported. Nominally 60 A, 4.5kV rated JBS freewheeling diodes were paired with similarly rated Si IGBTs and evaluated for temperature dependent static and dynamic characteristics as well as HTRB and surge capability. The SiC JBS/Si IGBT pair was also directly compared to Si PiN diode/Si IGBT with similar ratings. Compared to Si, the SiC freewheeling diode produced over twenty times lower reverse recovery charge leading to approximately a factor-of-four-reduction in tur

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2

Li, Yu Zhu, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, and Xiao Jian Chen. "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module." Materials Science Forum 679-680 (March 2011): 714–17. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.714.

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600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

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3

Liu, Ao, Gang Chen, Song Bai, Rui Li, and Wei Feng Sun. "Application of 1200V-8A SiC JBS Diodes in the Motor System." Applied Mechanics and Materials 347-350 (August 2013): 1530–34. http://dx.doi.org/10.4028/www.scientific.net/amm.347-350.1530.

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1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency.

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4

Sharma, Yogesh, P. Mumby-Croft, L. Ngwendson, et al. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.

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Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present is not possible because of the Si diodes. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. Comparisons of the 6.5 kV Si and hybrid SiC at room temperature and high temperature have shown that the switc

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5

Yuan, Song, Yichong Li, Min Hou, Xi Jiang, Xiaowu Gong, and Yue Hao. "Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT." Micromachines 15, no. 1 (2023): 73. http://dx.doi.org/10.3390/mi15010073.

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This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time. A Partial Schottky Collector Superjunction Reverse Conduction IGBT (PSC-SJ-RC-IGBT) is proposed to address these issues. The new structure eliminates the snapback phenomenon. Furthermore, by leveraging the unipolar conduction of the Schottky diode and its fast turn-off characteristics, the proposed device significantly reduces the turn-off power consumption and reverse reco

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6

Wu, Wei, Yansong Li, Mingkang Yu, Chongbing Gao, Yulu Shu, and Yong Chen. "Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter." Micromachines 14, no. 4 (2023): 873. http://dx.doi.org/10.3390/mi14040873.

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In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. It features a particular shortened P+ emitter (SE) in the diode part of RC-IGBT. Firstly, the shortened P+ emitter in the diode part can suppress the hole injection efficiency resulting in the reduced carriers extracted during the reverse recovery process. The peak of the reverse recovery current and switching loss of the built-in diode during reverse recovery is therefore lowered. Simulation results indicate

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7

Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits

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8

Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, et al. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN di

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9

Sundaramoorthy, Vinoth, Andrei Mihaila, Lucas Spejo, Renato Amaral Minamisawa, and Lars Knoll. "Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes." Materials Science Forum 1062 (May 31, 2022): 588–92. http://dx.doi.org/10.4028/p-u12e6u.

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6.5 kV SiC PiN diode with JTE and p+ rings termination was fabricated and characterized. The static and dynamic performance of SiC PiN diode were compared with that of SiC JBS diode and silicon diode, while switched in combination with a silicon IGBT. SiC PiN provides clear advantage while operating at higher current densities (above 100 A/cm2) and had lower leakage current. When switched together with a silicon IGBT, they contribute to losses similar to that of a SiC JBS diode.

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10

Górecki, Paweł, and Krzysztof Górecki. "Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode." Energies 13, no. 12 (2020): 3033. http://dx.doi.org/10.3390/en13123033.

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This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas

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11

Ramavath, Muneeshwar, and Rama Krishna Puvvula Venkata. "Lifetime (Bx) improvement of PV inverter using Si-SiC H-IGBT/Diode: a reliability approach." Indonesian Journal of Electrical Engineering and Computer Science 35, no. 2 (2024): 704. http://dx.doi.org/10.11591/ijeecs.v35.i2.pp704-710.

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Technological advancements have made it possible to harness the power of renewable energy sources. The efficiency of power electronic devices has increased to almost 98%. In order to reduce the risks of failure and maintain the operation of photovoltaic (PV)-based energy converters, reliable devices are needed. Due to the increasing number of wide-bandgap silicon in electronic converters, the need for more efficient and reliable devices has become more prevalent. However, the cost of these devices is a major issue. Hence, in this work extensive analysis of hybrid silicon (Si)-IGBT and silicon

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12

Muneeshwar, Ramavath Rama Krishna Puvvula Venkata. "Lifetime (Bx) improvement of PV inverter using Si-SiC H-IGBT/Diode: a reliability approach." Indonesian Journal of Electrical Engineering and Computer Science 35, no. 2 (2024): 704–10. https://doi.org/10.11591/ijeecs.v35.i2.pp704-710.

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Technological advancements have made it possible to harness the power of renewable energy sources. The efficiency of power electronic devices has increased to almost 98%. In order to reduce the risks of failure and maintain the operation of photovoltaic (PV)-based energy converters, reliable devices are needed. Due to the increasing number of wide-bandgap silicon in electronic converters, the need for more efficient and reliable devices has become more prevalent. However, the cost of these devices is a major issue. Hence, in this work extensive analysis of hybrid silicon (Si)-IGBT and silicon

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13

Njawah Achiri, Humphrey Mokom, Vaclav Smidl, Zdenek Peroutka, and Lubos Streit. "Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements." Energies 13, no. 14 (2020): 3749. http://dx.doi.org/10.3390/en13143749.

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles.

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14

Singh, Ranbir, Siddarth Sundaresan, Stoyan Jeliazkov, Deepak Veereddy, and Eric Lieser. ">1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTOR." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000104–7. http://dx.doi.org/10.4071/hiten-paper3-rsingh.

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The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of &lt; 100 μA at 325 °C operating temperature, switching transients &lt; 15 ns at 250 °C, Common Source current gains of 63 and on-resistance as low as 220 mΩ were measured on the SiC SJTs. For switching 7 A, 800 V at 100 kHz, the SiC SJT+GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a

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15

Rahimo, Munaf, and Liutauras Storasta. "Optimization and advantages of the Bi-mode insulated gate transistor." Facta universitatis - series: Electronics and Energetics 28, no. 3 (2015): 383–91. http://dx.doi.org/10.2298/fuee1503383r.

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The Bi-mode Insulated Gate Transistor BIGT is a single chip reverse conducting IGBT concept, which is foreseen to replace the standard IGBT / Diode two chip approach in many high power semiconductor applications. Therefore, it is important to understand in detail the design challenges and performance trade-offs faced when optimizing the BIGT for different application requirements. In this paper, we present the main conflicting design trade-offs for achieving the overall electrical and thermal performance targets. We will demonstrate experimentally how on one hand, the BIGT provides improved de

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16

Hofer-Noser, P., and N. Karrer. "Monitoring of paralleled IGBT/diode modules." IEEE Transactions on Power Electronics 14, no. 3 (1999): 438–44. http://dx.doi.org/10.1109/63.761687.

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17

Hu, Jun, Larry X. Li, Petre Alexandrov, Xiao Hui Wang, and Jian Hui Zhao. "5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application." Materials Science Forum 600-603 (September 2008): 947–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.947.

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4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used t

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18

Wang, Zhigang, Chong Yang, and Xiaobing Huang. "A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer." Micromachines 14, no. 3 (2023): 646. http://dx.doi.org/10.3390/mi14030646.

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A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reverse conduction. By preventing electrons from leaking across the N+ region at the collector side, the extra electron-blocking (EB) layer introduced in the SJ-RC-IGBT can dramatically enhance electron–hole pairs in the N/P-pillars. Hence, the SJ-RC-IGBT demonstrates a low on-state voltage (Von). In ad

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19

Napoli, E., P. Spirito, A. G. M. Strollo, F. Frisina, L. Fragapane, and D. Fagone. "Design of IGBT with integral freewheeling diode." IEEE Electron Device Letters 23, no. 9 (2002): 532–34. http://dx.doi.org/10.1109/led.2002.802590.

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20

Spejo, Lucas Barroso, Lars Knoll, and Renato Amaral Minamisawa. "6.5 kV SiC PiN and JBS Diodes’ Comparison in Hybrid and Full SiC Switch Topologies." Electronics 13, no. 22 (2024): 4548. http://dx.doi.org/10.3390/electronics13224548.

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This work investigates the performance of state-of-the-art non-commercial 6.5 kV Silicon Carbide (SiC) PiN and Junction Barrier Schottky (JBS) diodes in hybrid (Si IGBT with SiC diode) and full SiC (SiC MOSFET with SiC diode) switch topologies. The static and dynamic performance has been systematically evaluated at distinct temperatures, gate resistances and currents for each configuration. The SiC PiN diode presented higher current density capability and lower leakage current density than the JBS diode. Moreover, in most cases, the SiC PiN diode-based topologies demonstrated slightly higher t

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21

Netzel, Mario, Ralf Lerner, Ralf Siemieniec, and Josef Lutz. "3.3 kV IGBT and diode chipset using lifetime control techniques and low-efficiency emitters." Facta universitatis - series: Electronics and Energetics 15, no. 1 (2002): 51–59. http://dx.doi.org/10.2298/fuee0201051n.

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The adjustment of emitter efficiency by variation of doping profiles or application of lifetime control techniques such as irradiation of electrons and helium are two generally recognized concepts for the improvement of power device characteristics. In this work both concepts were studied by use of device simulation for the development of an IGBT and freewheeling diode chipset for 3.3 kV. Simulations were performed using an extended recombination model and recombination center data taken from measurements at different irradiated devices. Finally, this lead to the manufacturing of an IGBT using

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22

Shadmonhodzhaev, Murodilla, and Aleksey Zelenchenko. "Development of a Power Source for Vibroacoustic Diagnosis Position of Locomotive Depot Bearings." Bulletin of scientific research results, no. 2 (June 23, 2022): 43–49. http://dx.doi.org/10.20295/2223-9987-2022-2-43-49.

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Purpose: Two possible variants of power sources are considered: controlled three-phase bridge rectifier circuit with a step-down transformer and a pulse converter, getting power from the mains via uncontrolled three-phase bridge rectifier (Larionov circuit) for bringing into rotation with the required frequency of wheel-motor units of electric locomotives and electric trains at the position of indiscriminate diagnosis of bearings. In both cases, it is assumed that power sources receive electro-energy from a depot circuit — 380/220 V, 50 Hz. The comparison of proposed power supply options based

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23

Bašić, Mateo, Dinko Vukadinović, and Miljenko Polić. "Analysis of Power Converter Losses in Vector Control System of a Self–Excited Induction Generator." Journal of Electrical Engineering 65, no. 2 (2014): 65–74. http://dx.doi.org/10.2478/jee-2014-0010.

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Abstract This paper provides analysis of losses in the hysteresis-driven three-phase power converter with IGBTs and free-wheeling diodes. The converter under consideration is part of the self-excited induction generator (SEIG) vector control system. For the analysis, the SEIG vector control system is used in which the induction generator iron losses are taken into account. The power converter losses are determined by using a suitable loss estimation algorithm reported in literature. The chosen algorithm allows the power converter losses to be determined both by type (switching/conduction losse

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24

Scofield, James D., Joseph Neil Merrett, Jim Richmond, Anant K. Agarwal, and Scott Leslie. "Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules." Materials Science Forum 645-648 (April 2010): 1119–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1119.

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In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200°C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC junction barrier Schottky (JBS) diodes providing the 100 A rating at 200°C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power module

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25

Akherraz, M. "IGBT Based DC/DC Converter." Sultan Qaboos University Journal for Science [SQUJS] 2 (December 1, 1997): 49. http://dx.doi.org/10.24200/squjs.vol2iss0pp49-56.

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This paper presents an in-depth analytical and experimental investigation of an indirect DC-DC converter. The DC-AC conversion is a full bridge based on IGBT power modules, and the AC-DC conversion is done via a high frequency AC link and a first diode bridge. The AC link, which consists of snubbing capacitors and a variable air-gap transformer, is analytically designed to fulfill Zero Voltage commutation requirement. The proposed converter is simulated using PSPICE and a prototype is designed built and tested in the laboratory. PSPICE simulation and experimental results are presented and comp

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26

S, Srikanth, and Dr Byamakesh Nayak. "Reliability Improvement of Grid Connected PV Inverter Considering Monofacial and Bifacial Panels Using Hybrid IGBT." International Journal of Electrical and Electronics Research 12, no. 2 (2024): 443–52. http://dx.doi.org/10.37391/ijeer.120216.

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The development of bifacial photovoltaics has led to significant advancements in solar energy. Unlike traditional solar panels, which only generate electricity from the front side, these panels capture the energy from the rear and front surfaces. Bifacial photovoltaics utilize a dual-sided absorption to capture the sunlight that falls on nearby structures and the ground. This technology helps boost their efficiency and makes them an economical and sustainable choice. Furthermore, the increased energy production from the rear side of bifacial panels may lead to higher voltage fluctuations, whic

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27

Wang, Tongyang, Zehong Li, Yishang Zhao, et al. "A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise." Semiconductor Science and Technology 37, no. 4 (2022): 045011. http://dx.doi.org/10.1088/1361-6641/ac5465.

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Abstract A novel 3300 V trench insulated gate bipolar transistor (IGBT) with p-n-doped polysilicon split gate (PNSG-IGBT) is proposed for low electromagnetic interference noise. The reverse-biased polysilicon PN junction is laterally depleted and charged by displacement current during the turn-off transient, which raises electrostatic potential in n-region of the polysilicon PN junction (V N) and electrostatic potential under the gate oxide (V ACC) simultaneously. By technology computer aided design simulation, during the turn-on transient, the maximum dV ACC /dt is 57.1% lower than that of th

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28

Górecki, Paweł, and Krzysztof Górecki. "Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter." Energies 14, no. 1 (2020): 154. http://dx.doi.org/10.3390/en14010154.

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In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state using an electrothermal averaged model of a diode–transistor switch containing an Insulated Gate Bipolar Transistor (IGBT) and a rapid switching diode. This model has a form of a subcircuit for SPICE (Simulation Program with Integrated Circuit Emphasis). The influence of such factors as the switching frequency of the transistor, the duty cycle of

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29

Chakraborty, Avijit, Pradip Kumar Sadhu, Kallol Bhaumik, Palash Pal, and Nitai Pal. "Performance Analysis of High frequency Parallel Quasi Resonant Inverter Based Induction Heating System." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (2016): 447. http://dx.doi.org/10.11591/ijece.v6i2.8034.

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This paper presents the performance analysis of high frequency parallel quasi-resonant converter for domestic induction heating application as well as industrial application. The power semiconductor switch like IGBT is incorporated in this high frequency converter. Parallel Quasi-resonant topology is selected to provide ZVS and ZCS operation during switching conditions to reduce switching losses. Here, IGBT provides better efficiency and faster switching technique. In the proposed topology, a diode is connected across the IGBT ensuring the ZVS operation during turn-ON that enhances the possibi

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30

Bazzi, Ali M., Philip T. Krein, Jonathan W. Kimball, and Kevin Kepley. "IGBT and Diode Loss Estimation Under Hysteresis Switching." IEEE Transactions on Power Electronics 27, no. 3 (2012): 1044–48. http://dx.doi.org/10.1109/tpel.2011.2164267.

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Zhang, Peijian, Sheng Qiu, Kunfeng Zhu, and Wensuo Chen. "Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure." Electronics 13, no. 1 (2023): 23. http://dx.doi.org/10.3390/electronics13010023.

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In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the proposed RC-IGBT-CIE, which results in low reverse-conducting voltage (VF). The low reverse recovery loss and low turn-on loss using an inductive load circuit are obtained by using the modified carrier concentration profile resulted from both the CIE effect and th

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32

Yamada, Renichi, Norifumi Kameshiro, Yoshiaki Toyota, et al. "A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT." Materials Science Forum 858 (May 2016): 1091–94. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1091.

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A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (VF) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage VCE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.

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33

Qi, Liang, Xu Wang, and Jiake Pan. "IGBT Energy Losses Analysis and Heat Dissipation System Design of Three-level Inverter." Journal of Physics: Conference Series 2260, no. 1 (2022): 012006. http://dx.doi.org/10.1088/1742-6596/2260/1/012006.

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Abstract According to the needs of the design and development of three-level inverter, the paper introduces the design process of the inverter cooling system in detail. Firstly, this paper proposes a calculation method of the energy losses in the insulated gate bipolar transistor(IGBT) and freewheeling diode(FWD), and calculates the energy losses of the IGBT module in the inverter according to the method. Otherwise, a set of the inverter forced air cooling heat dissipation system is designed, and the simulation of the finite element analysis is used for the analysis and optimization of the sys

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Mendonça, Dayane do Carmo, João Victor Guimarães França, Heverton Augusto Pereira, Seleme Isaac Seleme Júnior, and Allan Fagner Cupertino. "Zero Sequence Injection in Delta-CHB STATCOM: Towards Optimum Silicon Area Through Typical Power IGBT/diode Model." Eletrônica de Potência 29 (October 8, 2024): e202437. http://dx.doi.org/10.18618/rep.e202437.

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This work quantifies the impact of third harmonic circulating current injection (THCCI) in a Cascaded H-bridge converter in delta configuration (Delta-CHB) for Static Synchronous Compensator (STATCOM) application. The analyses consist of evaluating the impact of THCCI on the silicon area of semiconductor devices. To achieve this objective, this work develops a typical IGBT/Diode model to determine the nominal current of the devices for a given maximum junction temperature. Commercial devices in the voltage classes of 1700 V, 3300 V, 4500 V, and 6500 V were considered, with nominal currents ran

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Voldoire, Adrien, Tanguy Phulpin, and Mohamad Alaa Eddin Alali. "Losses and Efficiency Evaluation of the Shunt Active Filter for Renewable Energy Generation." Electronics 14, no. 10 (2025): 1972. https://doi.org/10.3390/electronics14101972.

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The Shunt Active Filter (SAF) is an effective solution for mitigating electrical perturbations in power networks. SAFs usually consist of a voltage source inverter (VSI) with lossy transistors and bulky inductors. In this context, this article proposes analytical models to evaluate the losses and efficiency of a SAF. The models include conduction and switching losses in the transistors and diodes and are valid for both IGBT and SiC MOSFET transistors. The methodology consists of analysing the current waveform to separate the portion flowing through the transistor or diode. IGBT and SiC MOSFET

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Chen, Weizhong, Wei Wang, and Xi Qu. "A separated RC-IGBT with PIN and MPS diode." IEICE Electronics Express 12, no. 17 (2015): 20150443. http://dx.doi.org/10.1587/elex.12.20150443.

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Rahimo, M. T., and N. Y. A. Shammas. "Freewheeling diode reverse-recovery failure modes in IGBT applications." IEEE Transactions on Industry Applications 37, no. 2 (2001): 661–70. http://dx.doi.org/10.1109/28.913734.

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Fuhrmann, Jan, Sebastian Klauke, and Hans-Guenter Eckel. "IGBT and Diode Behavior During Short-Circuit Type 3." IEEE Transactions on Electron Devices 62, no. 11 (2015): 3786–91. http://dx.doi.org/10.1109/ted.2015.2477324.

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Górecki, Krzysztof, and Paweł Górecki. "SPICE-Aided Nonlinear Electrothermal Modeling of an IGBT Module." Electronics 12, no. 22 (2023): 4588. http://dx.doi.org/10.3390/electronics12224588.

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The paper proposes a compact electrothermal model of the IGBT module in the form of a subcircuit for SPICE. This model simultaneously takes into account electrical phenomena occurring in the module components and thermal phenomena occurring in this module. In the description of electrical phenomena, the previously formulated models of the IGBT and the diode are used, whereas the description of thermal phenomena is original. While describing thermal phenomena, self-heating in each component, mutual thermal couplings between each pair of these components, and the influence of the dissipated powe

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Górecki, Paweł, and Krzysztof Górecki. "Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case." Electronics 10, no. 2 (2021): 210. http://dx.doi.org/10.3390/electronics10020210.

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This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances

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Li, Cui, Rui Jin, Feng He, et al. "A failure mechanism of IGBT module in MMC and improvement." Journal of Physics: Conference Series 2645, no. 1 (2023): 012008. http://dx.doi.org/10.1088/1742-6596/2645/1/012008.

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Abstract In modular multi-level converter valves, as the blocked mode happens, the failure in IGBT modules often causes a chain explosion reaction, which masks the initial failure mechanism. The root cause of the failure was that the voltage, consisting of the diode forward voltage and the induced voltage on the parasitic inductance, exceeded the reverse blocking capability of the anti-parallel IGBT. The methods against the failure were studied from three aspects: decreasing the diode’s peak forward voltage, increasing the reverse blocking capability of IGBT, and minimizing the parasitic induc

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Grgić, Ivan, Dinko Vukadinović, Mateo Bašić, and Matija Bubalo. "Calculation of Semiconductor Power Losses of a Three-Phase Quasi-Z-Source Inverter." Electronics 9, no. 10 (2020): 1642. http://dx.doi.org/10.3390/electronics9101642.

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This paper presents two novel algorithms for the calculation of semiconductor losses of a three-phase quasi-Z-source inverter (qZSI). The conduction and switching losses are calculated based on the output current-voltage characteristics and switching characteristics, respectively, which are provided by the semiconductor device manufacturer. The considered inverter has been operated in a stand-alone operation mode, whereby the sinusoidal pulse width modulation (SPWM) with injected 3rd harmonic has been implemented. The proposed algorithms calculate the losses of the insulated gate bipolar trans

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d’Egmont, Philippe R., Rodrigo P. M. Moreira, Christopher P. Tostado, et al. "Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules." High Temperatures-High Pressures 53, no. 1-2 (2024): 175–200. http://dx.doi.org/10.32908/hthp.v53.jsf07.

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The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips present in such devices and its operating condition. However, measurements of the semiconductor temperatures are often difficult to be done, thus requiring modeling and simulation tools to accurately evaluate the instantaneous temperature under

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Lendenmann, H., N. Johansson, D. Mou, et al. "Operation of a 2500V 150A Si-IGBT / SiC Diode Module." Materials Science Forum 338-342 (May 2000): 1423–26. http://dx.doi.org/10.4028/www.scientific.net/msf.338-342.1423.

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Hobart, K. D., E. A. Imhoff, and B. Ray. "Medium Voltage Hybrid Si IGBT/SiC JBS Diode Module Development." ECS Transactions 64, no. 7 (2014): 3–12. http://dx.doi.org/10.1149/06407.0003ecst.

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Hanini, Wasma, Sami Mahfoudhi, and Moez Ayadi. "Development of Electrothermal Models for Electrical Traction." World Electric Vehicle Journal 13, no. 2 (2022): 39. http://dx.doi.org/10.3390/wevj13020039.

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In this paper, improved electrothermal models of the power diode and IGBT have been developed. The main local physical effects have been considered. The proposed models are able to deal with electrical and thermal effects. The models were confirmed by comparison with other models having similar characteristics for different circuits and different temperatures. The developed models are implemented in a traction unit to study the electrothermal performance in an electric vehicle system. The models were implemented in the Pspice circuit simulation platform using standard Pspice components and ana

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Chen, Dezhi, Zhixiang Zhang, Shichong Zhang, Yun Sun, Wenbo Zhao, and Wenliang Zhao. "Study of the Protection and Energy Transmission Modes of One Phase Short Circuit to Ground in Inverters." Sensors 23, no. 19 (2023): 8211. http://dx.doi.org/10.3390/s23198211.

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Research indicates that phase-to-ground short-circuits in a frequency converter can subject the rectifier diode and IGBT to excessive voltage and current, potentially causing damage if the component selection margin during hardware design is insufficient. In order to solve the above problems, this paper studies the design of the LCL filter and ground short circuit problem of the hundred-kilowatt inverter. Firstly, an analytical method for calculating the DC bus capacitance and reactor of the inverter is proposed. The interaction between the DC bus capacitance and the reactor parameters and per

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Buttay, Cyril, C. Mark Johnson, Jeremy Rashid, et al. "High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application." Materials Science Forum 556-557 (September 2007): 709–12. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.709.

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In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, doublesided cooling is employed, in which the semiconductor chips are sa

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Liu, Yue Yang, Hai Long Bao, Wen Yu Gao, et al. "A Novel Fast Recovery Diode with Lower Emitter Efficiency." Applied Mechanics and Materials 433-435 (October 2013): 2222–26. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.2222.

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In this paper, a new structure of Fast Recovery Diode (FRD) and its manufacture methods were investigated. The active region designed by TCAD simulation software could achieve low emitter injection efficiency, and then reduce the peak reverse recovery current, improve the reverse recovery softness and increase working stability. Meanwhile, the effect of the P-body dose and carrier lifetime on the turn-off characteristic of FRD was also discussed. Taking an example of 3300V voltage grade devices for FRD, the reasonable P-body dose and carrier lifetime on the basis of the new structure were conf

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Sundaresan, Siddarth G., Charles Sturdevant, H. Issa, Madhuri Marripelly, Eric Lieser, and R. Singh. "Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses." Materials Science Forum 717-720 (May 2012): 945–48. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.945.

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Novel device design and process innovations made at GeneSiC on SiC JBS rectifiers result in a significant increase in surge current capability with a 33% decrease in power dissipation at 10x rated current. On the 1200 V-class rectifiers, a clear signature of avalanche-limited breakdown with ultra-low leakage currents is observed at temperatures as high as 240 °C. Almost temperature independent Schottky barrier heights of 1.2 eV and ideality factors 2K2 (for 4H-SiC) is directly extracted from the forward I-V characteristics. When compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC

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