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Gotowe bibliografie tematyczne / InGaN/Si

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Gotowa bibliografia na temat „InGaN/Si”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "InGaN/Si"

1

Gridchin V. O., Reznik R. R., Kotlyar K. P., et al. "MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates: comparative analysis." Technical Physics Letters 48, no. 14 (2022): 24. http://dx.doi.org/10.21883/tpl.2022.14.52105.18894.

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In this work, InGaN nanowires with a high In content were grown, for the first time on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range. Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon

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2

Buryi, M., T. Hubáček, F. Hájek, et al. "Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells." Journal of Physics: Conference Series 2413, no. 1 (2022): 012001. http://dx.doi.org/10.1088/1742-6596/2413/1/012001.

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The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities we

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3

Noh, Siyun, Jaehyeok Shin, Yeon-Tae Yu, Mee-Yi Ryu, and Jin Soo Kim. "Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires." Nanomaterials 13, no. 2 (2023): 358. http://dx.doi.org/10.3390/nano13020358.

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We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and

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4

Tuan, Thi Tran Anh, Dong-Hau Kuo, Phuong Thao Cao, et al. "Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer." Coatings 9, no. 11 (2019): 699. http://dx.doi.org/10.3390/coatings9110699.

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.4

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5

Han, Ji Sheng, Sima Dimitrjiev, Li Wang, Alan Iacopi, Qu Shuang, and Xian Gang Xu. "InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate." Materials Science Forum 679-680 (March 2011): 801–3. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.801.

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Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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6

Wang, Xingyu, Peng Wang, Hongjie Yin, Guofu Zhou, and Richard Nötzel. "An InGaN/SiNx/Si Uniband Diode." Journal of Electronic Materials 49, no. 6 (2020): 3577–82. http://dx.doi.org/10.1007/s11664-020-08038-5.

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7

Ager, Joel W., Lothar A. Reichertz, Yi Cui, et al. "Electrical properties of InGaN-Si heterojunctions." physica status solidi (c) 6, S2 (2009): S413—S416. http://dx.doi.org/10.1002/pssc.200880967.

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8

ALBERT, S., A. BENGOECHEA-ENCABO, M. A. SANCHEZ-GARCÍA, et al. "ORDERED GAN/INGAN NANORODS ARRAYS GROWN BY MOLECULAR BEAM EPITAXY FOR PHOSPHOR-FREE WHITE LIGHT EMISSION." International Journal of High Speed Electronics and Systems 21, no. 01 (2012): 1250010. http://dx.doi.org/10.1142/s0129156412500103.

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The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111) . The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into self-assembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth

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9

Yamamoto, Akio, Kazuki Kodama, Md Tanvir Hasan, Naoteru Shigekawa, and Masaaki Kuzuhara. "MOVPE growth of thick (∼1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells." Japanese Journal of Applied Physics 54, no. 8S1 (2015): 08KA12. http://dx.doi.org/10.7567/jjap.54.08ka12.

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10

Cho, ll-Wook, Bom Lee, Kwanjae Lee, Jin Soo Kim, and Mee-Yi Ryu. "Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice." Journal of Nanoscience and Nanotechnology 21, no. 11 (2021): 5648–52. http://dx.doi.org/10.1166/jnn.2021.19460.

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The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding

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