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Artykuły w czasopismach na temat „Leakage Current Density”

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Data publikacji: 6 września 2023

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1

Kawahara, Takamitsu, Naoki Hatta, Kuniaki Yagi, et al. "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC." Materials Science Forum 645-648 (April 2010): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.339.

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The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing betw
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2

Tamada, Minoru, Yuji Noguchi, and Masaru Miyayama. "Defects and Leakage Current in PbTiO3 Single Crystals." Key Engineering Materials 350 (October 2007): 77–80. http://dx.doi.org/10.4028/www.scientific.net/kem.350.77.

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Single crystals of PbTiO3 (PT) were grown by a self flux method, and effects of lattice defects on the leakage current properties were investigated. While PT crystals annealed in air at 700 oC showed a leakage current density of the order of 10-5 A/cm2, annealing under a high oxygen partial pressure of 35 MPa increased leakage current density to 10-4 A/cm2. The increase in leakage current by the oxidation treatment provides direct evidence that electron hole is a detrimental carrier for the leakage current property of PT at room temperature. The vacancies of Pb are suggested to act as an elect
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3

Kim, Hyung Chul, Moon Seob Han, Hyun June Park, Dong Uk Jang, Gyung Suk Kil, and Nirmal Kumar Nair. "Consideration of Uncertainty in Diagnosis for Railway Arrester." Key Engineering Materials 321-323 (October 2006): 1507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1507.

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This paper presents a method for diagnosis of railway arrester considering uncertainty. Arresters, a protective device that prevents damage due to transient voltages, deteriorate due to the absorption of moisture, repetitive operation during over-voltages and manufacturing defects. Various diagnostic techniques are available for monitoring deterioration of arresters. The technique based on the amplitude of leakage current measures the root mean square or peak values of leakage current components. After measuring the total leakage current, harmonics of leakage current components are analyzed by
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4

Ishikawa, Tsuyoshi, T. Katsuno, Y. Watanabe, H. Fujiwara, and T. Endo. "Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode." Materials Science Forum 717-720 (May 2012): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.371.

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We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes using device simulation. It is found that etch pits with only a few tens of nm in depth has a large influence on leakage current and is also shown that leakage current is sensitive to both etch pit shape and density. From these results, we suggest the critical density of nanoscale pit, which is suppressing the variability of leakage current, at various drift layer thickness tdrift and doping concentration Ndrift.
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5

Hirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.

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The impact of threading dislocation density on the leakage current of reverse IV characteristics in 1.2 kV Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs), and PN junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. For example, the correlation in SBDs is strong, but weak in PNDs. The threading dislocations were found to be in the same location as the current leakage points in the SBDs, but not in the PNDs. Nano-scale inverted cone pits were observed at the Sch
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6

Uno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura, and Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current." Japanese Journal of Applied Physics 41, Part 1, No. 4B (2002): 2645–49. http://dx.doi.org/10.1143/jjap.41.2645.

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7

Kim, Hyojung, Jongwoo Park, Junehwan Kim, et al. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.

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Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has I–V, C–V, and charge pumping, but the procedure is very complicated. In this premier work, we analyzed the leakage current of metal insulator semiconductor (MIS) capacitors with different initiators through low-frequency noise (LFN) measurement with simplicity and high sensitivity. The LFN measurement results show a correlation between power spectral density (SIG) and gate leakage current (IG).
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8

Negara, I. Made Yulistya, I. G. N. Satriyadi Hernanda, Dimas Anton Asfani, Mira Kusuma Wardani, Bonifacius Kevin Yegar, and Reynaldi Syahril. "Effect of Seawater and Fly Ash Contaminants on Insulator Surfaces Made of Polymer Based on Finite Element Method." Energies 14, no. 24 (2021): 8581. http://dx.doi.org/10.3390/en14248581.

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Polymer is an insulating substance that has become increasingly popular in recent years due to its benefits. Light density, superior dielectric and thermal properties, and water-resistant or hydrophobic properties are only a few of the benefits. The presence of impurities or pollutants on the insulator’s surface lowers its dielectric capacity, which can lead to current leakage. The influence of seawater and fly ash pollutants on the distribution of the electric field and the current density of the insulator was simulated in this study. The finite element method was used to execute the simulati
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9

Geng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (2018): 416. http://dx.doi.org/10.3390/electronics7120416.

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current den
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10

Albertin, Katia F., M. A. Valle, and I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric." Journal of Integrated Circuits and Systems 2, no. 2 (2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.

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MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier TransformInfrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric constant of approximately 40, a good interface quality with silicon and a leakage current density, of 7
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11

Sikula, J., J. Hlavka, J. Pavelka, et al. "Low Frequency Noise of Tantalum Capacitors." Active and Passive Electronic Components 25, no. 2 (2002): 161–67. http://dx.doi.org/10.1080/08827510212341.

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A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model ofTa−Ta2O5−MnO2MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperatureMnO2−Mn2O3transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In norm
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12

Hirokazu, Fujiwara, Masaki Konishi, T. Ohnishi, et al. "Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density." Materials Science Forum 679-680 (March 2011): 694–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.694.

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The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with
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13

Chen, Zhisheng, Renjun Song, Qiang Huo, et al. "Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array." Micromachines 12, no. 6 (2021): 614. http://dx.doi.org/10.3390/mi12060614.

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Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D VRRAM was based on the write and read margin. However, the leakage current (LC) of the 3-D VRRAM array is a concern as well. Excess leakage currents not only reduce the read/write tolerance and liability of the memory cell but also increase the power consumption of the entire array. In this article,
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14

Nurbaya, Z., and M. Rusop. "Low Leakage Current Density Behaviour of Nanofilms PbTiO3 Based MIM Capacitor." Advanced Science Letters 20, no. 10 (2014): 2258–63. http://dx.doi.org/10.1166/asl.2014.5712.

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15

Wöhler, Franziska J., Ingo Münch, and Werner Wagner. "Electric leakage current density in phase field simulations for nanogenerator concepts." PAMM 17, no. 1 (2017): 575–76. http://dx.doi.org/10.1002/pamm.201710257.

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16

In, Tae-Gyoung, Sunggi Baik, and Sangsub Kim. "Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering." Journal of Materials Research 13, no. 4 (1998): 990–94. http://dx.doi.org/10.1557/jmr.1998.0139.

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The effects of Al and Nb doping on the leakage current behaviors were studied for the Ba0.5Sr0.5TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si(100) substrate by rf magnetron sputtering. Al and Nb were selected as acceptor and donor dopants, respectively, because they have been known to replace Ti-sites of the BST perovskite. The BST thin films prepared in situ at elevated temperatures showed relatively high leakage current density and low breakdown voltage. However, the BST thin films deposited at room temperature and annealed subsequently in air showed improved electrical properties. In par
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17

Yu, Tong, Yun Liu, Binbin Huang, Xiaoyang Chen, and Ping Yu. "Modulating multiple leakage current mechanisms in the [LaNiO3/Ba0.67Sr0.33TiO3]3 multilayer heterostructure thin films via dielectrics/electrode interface modifications." AIP Advances 12, no. 12 (2022): 125309. http://dx.doi.org/10.1063/5.0129495.

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Ferroelectric (FE) multilayer heterostructure films have attracted significant attention due to their superior dielectric performance, which shows increasing opportunities in the application of energy storage capacitors or high-capacitance density systems. However, the leakage current density in FE multilayer heterostructure thin films is closely linked to the thickness of each single FE layer and the number of hetero-structure interfaces. In Pt/[LaNiO3/Ba0.67Sr0.33TiO3]3 (Pt/[LNO/BST]3) multilayer thin films, the dominant leakage current mechanism is Poole–Frenkel (PF) emission at room temper
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18

Voitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, et al. "Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 5 (2021): 3–8. http://dx.doi.org/10.17223/00213411/64/5/3.

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Two types of long-wave infrared nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls of the mesa structures were passivated with an Al2O3 dielectric film or left without passivation. The CdTe content in the absorbing layers was 0.20 and 0.21, and in the barrier layers, 0.61 and 0.63. The dark currents of the manufactured devices were studied in a wide range of voltages and temperatures. The values of the surface leakage component are found under various conditions. It has been sh
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19

Wani, Waseem Ahmad, Nilofar Naaz, B. Harihara Venkataraman, Souvik Kundu, and Kannan Ramaswamy. "Significantly reduced leakage current density in Mn-doped BiFeO3 thin films deposited using spin coating technique." Journal of Physics: Conference Series 2070, no. 1 (2021): 012088. http://dx.doi.org/10.1088/1742-6596/2070/1/012088.

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Abstract BiFeO3 (BFO) and Mn-doped BFO thin films are prepared on indium tin oxide/glass substrates using wet chemical deposition technique. The role of Mn defects (3% to 10%) on the leakage current density and other physical properties of BFO thin film devices is investigated. The X-ray diffraction patterns confirm the single-phase formation of rhombohedrally distorted BFO thin films. The scanning electron microscopy images approve uniform and crack-free film depositions, which is of great importance to the practical device applications of such materials. The oxidation states are determined b
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20

Tian, Dong Bin, Qi Feng Pan, Xiao Zhou He, and Xuan Hong Zhang. "Reduce the Leakage Current of High Voltage Polymer Ta Electrolyte Capacitors." Materials Science Forum 852 (April 2016): 686–90. http://dx.doi.org/10.4028/www.scientific.net/msf.852.686.

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The leakage currents of high nominal voltage conductive polymer tantalum (Ta) electrolytic capacitors are the difficulties in the research and development processing. The optimized and improved forming technical of increasing current density with the voltage rising was used in the present paper, and silane coupling agent has been used to the dielectric surface of the electrode body before polymerization, and conductive slurry was used to forming the cathode electrolyte of capacitors. Low leakage currents and high breakdown voltage have been tested; otherwise, the endurance capabilities of reve
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21

Mahi, K., and H. Ait-Kaci. "Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics." Journal of Nano- and Electronic Physics 13, no. 5 (2021): 05019–1. http://dx.doi.org/10.21272/jnep.13(5).05019.

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22

Kudou, Chiaki, Hirokuni Asamizu, Kentaro Tamura, et al. "Influence of Epi-Layer Growth Pits on SiC Device Characteristics." Materials Science Forum 821-823 (June 2015): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.177.

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Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schot
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23

He, Mo, Qi Bin Liu, and Chang Qi Xia. "Study on Microstructure of ZnO Lighting Arrester with High Voltage Gradient." Advanced Materials Research 415-417 (December 2011): 1070–73. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1070.

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To obtain ZnO arrester with high voltage gradient and small size, through the optimizing foundamental formula of arrester and changing sintering temperature and holding time, the electrical properties and microstructure of varistors were studied. The density of varistors was determined by using the mass - volume method , voltage gradient and leakage current of ZnO arrester were measured with Ⅱ Surge Arrester Tester DC parameters, microstructure of varistor ceramics were studied by means XRD and SEM. The experimental results show that with increasement of the sintering temperature, the density
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24

Kim, Nam-Kyeong, Soon-Gil Yoon, Won-Jae Lee, and Ho-Gi Kim. "Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition." Journal of Materials Research 12, no. 4 (1997): 1160–64. http://dx.doi.org/10.1557/jmr.1997.0160.

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The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 °C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films deposited at 500 °C were 210 and 0.018 at 100 kHz, respectively. STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 °C was about 1.0 × 10-8 A/cm2 at
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25

Lee, Jae-Hoon, Jung-Hee Lee, and Ki-Sik Im. "Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes." Crystals 11, no. 2 (2021): 87. http://dx.doi.org/10.3390/cryst11020087.

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AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacitance–voltage (C–V) measurements were conducted in order to find the leakage current mechanism and reduce the reverse leakage current. The fabricated AlGaN/GaN SBDs with high Al composition exhibited two orders’ higher leakage current compared to the device with low Al composition (20%) due to large bulk and surface leakage components. The leaka
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26

Sohail, Muhammad, Salman Amin, Yasir Butt, and Muhammad Bin Zubaid Ramay. "Aging Performance of Low-Density Polyethylene/Silicone Rubber Blends Insulators Under Contaminated Conditions." Pakistan Journal of Engineering and Technology 5, no. 1 (2022): 29–34. http://dx.doi.org/10.51846/vol5iss1pp29-34.

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Insulation materials are a vital part of the electrical system in all kinds of high voltage (HV) Transmission lines. Environmental stresses affect the performance of all types of insulation materials over time. Dielectric breakdown strength (DBS), Hydrophobicity, Leakage current, internal partial discharge and volume resistivity are all three degraded parameters in the service environment. The materials stand best in outdoor insulation, with the lowest partial discharge, highest breakdown strength, high hydrophobic, Lowest Leakage current, and highest volume resistivity. Enhancement of these p
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27

Ramos, D., M. Delmas, R. Ivanov, et al. "Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors." Journal of Applied Physics 132, no. 20 (2022): 204501. http://dx.doi.org/10.1063/5.0106878.

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The surface leakage in InAs/GaSb type-II superlattice (T2SL) is studied experimentally and theoretically for photodiodes with small sizes down to 10 × 10 μm2. The dependence of dark current density on mesa size is studied at 110 and 200 K, and surface leakage is shown to impact both generation–recombination (GR) and diffusion dark current mechanisms. A quasi-3-dimensional model to simulate the fabrication process using surface traps on the pixel's sidewall is presented and is used to accurately represent the dark current of large and small pixels with surface leakage in the different temperatu
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28

Pengchan, W., T. Phetchakul, and Amporn Poyai. "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method." Advanced Materials Research 55-57 (August 2008): 765–68. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.765.

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The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.
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29

Kang, H. D. "Trap-density dependent leakage current behavior of lead zirconate titanite thin film." Thin Solid Films 516, no. 8 (2008): 2014–16. http://dx.doi.org/10.1016/j.tsf.2007.06.167.

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Chandel, Shilpi, Preeti Thakur, and Atul Thakur. "Low leakage current density and improved dielectric behavior of BiFexO3 nano-ceramics." Journal of Alloys and Compounds 845 (December 2020): 156287. http://dx.doi.org/10.1016/j.jallcom.2020.156287.

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Mousavi, Navid, Tohid Rahimi, and Homayoun Meshgin Kelk. "Reduction EMI of BLDC Motor Drive Based on Software Analysis." Advances in Materials Science and Engineering 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1497360.

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In the BLDC motor-drive system, the leakage current from a motor to a ground network and existence of high-frequency components of the DC link current are the most important factors that cause conducting interference. The leakage currents of the motors, flow through common ground, will interfere with other equipment because of the high density of electrical and electronic systems in the spacecraft and aircrafts. Moreover, generally there are common DC buses in the mentioned systems, which aggravate the problem. Function of the electric motor causes appearance of the high-frequency components i
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Tan, Suo Kui, Xiao Ping Song, Li Qiao, Hong Yan Guo, Song Ji, and Hong Zhao. "The Effect of Heat Treatment Temperature on Property and Structure of Ni Group Core-Shell Particles ER." Advanced Materials Research 213 (February 2011): 437–40. http://dx.doi.org/10.4028/www.scientific.net/amr.213.437.

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By means of mechanical properties test and microstructure graph observation，the relationship of heat treatment temperature of core-shell Ni/TiO2 group particles with mechanical properties under different electric field has been researched .It is found that the FT-IR，XRD morphology of heat treatment at350°C is different from the one at100°C，the shear stress of same composition ER decreased with heat treatment temperature increasing. But the leakage current density of ER shows contrary result. That is because the leakage current density of ER decreased with the increasing heat treatment temperat
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Li, Li, and Qi Bin Liu. "Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors." Advanced Materials Research 820 (September 2013): 208–11. http://dx.doi.org/10.4028/www.scientific.net/amr.820.208.

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To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum volt
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34

Salem, Ali Ahmed, Kwan Yiew Lau, Mohd Taufiq Ishak, et al. "Monitoring Porcelain Insulator Condition Based on Leakage Current Characteristics." Materials 15, no. 18 (2022): 6370. http://dx.doi.org/10.3390/ma15186370.

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Insulator monitoring using leakage current characteristics is essential for predicting an insulator’s health. To evaluate the risk of flashover on the porcelain insulator using leakage current, experimental investigation of leakage current indices was carried out. In the first stage of the experiment, the effect of contamination, insoluble deposit density, wetting rate, and uneven distribution pollution were determined on the porcelain insulator under test. Then, based on the laboratory test results, leakage current information in time and frequency characteristics was extracted and employed a
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Schoeck, Johannes, Jonas Buettner, Mathias Rommel, Tobias Erlbacher, and Anton J. Bauer. "4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density." Materials Science Forum 897 (May 2017): 427–30. http://dx.doi.org/10.4028/www.scientific.net/msf.897.427.

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High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73
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36

PEREZ, J. P., P. SIGNORET, M. MYARA, I. ASAAD, and B. ORSAL. "SURFACE LEAKAGE CURRENT RELATED $\frac{1}{f}$ NOISE IN NONILLUMINATED FOCAL PLANE ARRAY Hg1-xCdxTe DIODE." Fluctuation and Noise Letters 03, no. 04 (2003): L379—L388. http://dx.doi.org/10.1142/s0219477503001488.

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Experimental results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg1-xCdxTe ion implanted n+-on-p junction photodiodes with x = 0,3. By measuring the temperature dependence of the dc characteristics in the temperature range [77 K, 175 K], it was found that the dark current can be represented with two components at low reverse-bias: diffusion and surface leakage current. Furthermore, reporting on electrical noise spectral density as a function of temperature and dark current, we assume that below 120 K, [Formula: see text] noise current is surface leakage
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37

Titthikusumarn, Wiwa, Wittaya Jakpetch, and Wisut Titiroongruang. "Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation." Advanced Materials Research 811 (September 2013): 200–204. http://dx.doi.org/10.4028/www.scientific.net/amr.811.200.

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Mesa diodes were irradiation by electron beam at various doses of 25, 50 and 75 kGy to find optimum dose for controlling minority carrier lifetime. The experiment result shows that electron beam can reduce minority carrier lifetime from 24.3 ns to 14.8, 9.5 ns and 7.9 at dose of 25, 50 and 75 kGy, respectively. However, the result of electron beam is not only reduce the lifetime but also effected to other electrical properties such as increasing in saturation current density about 2-3 times, increasing in reverse leakage current density about 3 times. Dominant cause of reverse leakage is incre
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38

Shi, Yan, Xing Liang Jiang, Qi Fa Wan, Xiong Wu, and Tao Xu. "Measurement and Analysis of the Leakage Current on the Surface of Polluted Suspension Ceramic Insulator." Applied Mechanics and Materials 48-49 (February 2011): 668–74. http://dx.doi.org/10.4028/www.scientific.net/amm.48-49.668.

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The artificial pollution tests are implemented on an IEC standard suspension insulator, and the leakage current waveforms and frequency characteristics were investigated under different equivalent salt deposit density ESDD and relative humidity. It was found that the peak values of the leakage current, the total harmonic distortion (THD) and the odd order harmonic components, e.g. 150 and 650Hz, were significantly correlated with the contamination condition of the insulator surfaces. Besides, a new characteristic parameter IMR，defined as the product of the peak values of leakage current by the
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39

Wang, Yang, De Xiang Fu, Wen Zhi Li, et al. "Effect of Annealing on Room Temperature Multiferroics of BiFe1-xCoxO3." Materials Science Forum 859 (May 2016): 30–35. http://dx.doi.org/10.4028/www.scientific.net/msf.859.30.

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We studied the effect of annealing and Co ion doping on the structure, leakage current, ferroelectric polarization and magnetism of BiFeO3 samples. X-ray diffraction patterns demonstrate that an appropriate Co doping concentration is favor of suppressing the secondary phase but annealing treatment is apt to the growth of both the main and the secondary phases. The current density as a function of an electric field indicates that Co doping increases the leakage current density as samples before annealing but suppresses it after annealing. Annealing treatment improves the leakage for Co-doped sa
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40

Umezawa, Hitoshi, Kazuhiro Ikeda, Ramanujam Kumaresan, Natsuo Tatsumi, and Shinichi Shikata. "Device Characteristics Dependence on Diamond SDBs Area." Materials Science Forum 615-617 (March 2009): 1003–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.1003.

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Device size scaling of pseudo-vertical diamond Schottky barrier diodes (SBDs) has been characterized for high-power device applications based on the control of doping concentration and thickness of the p- CVD diamond layer. Decreasing parasitic resistance on the p+ layer utilizing lithography and etching makes possible to get a constant specific on-resistance of less than 20 mOhm-cm2 with increasing device size up to 200 µm. However, the leakage current under low reverse bias conditions is increased markedly. Due to the increase in the leakage current, the reverse operation limit is decreased
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41

Atalla, M. R. M., S. Assali, S. Koelling, A. Attiaoui, and O. Moutanabbir. "Dark current in monolithic extended-SWIR GeSn PIN photodetectors." Applied Physics Letters 122, no. 3 (2023): 031103. http://dx.doi.org/10.1063/5.0124720.

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Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject of extensive investigations because of their bandgap tunability and silicon compatibility. However, due to growth defects, these PDs suffer a relatively high dark current density as compared to commercial III–V PDs. Herein, we elucidate the mechanisms governing the dark current in [Formula: see text]m GeSn PDs at a Sn content of 10 at. %. It was found
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42

Huang, Yujie, Jing Yang, Degang Zhao, et al. "A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition." Nanomaterials 13, no. 3 (2023): 525. http://dx.doi.org/10.3390/nano13030525.

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The dark leakage current of AlxGa1-xN Schottky barrier detectors with different Al contents is investigated. It was found that the dark leakage of AlxGa1-xN detectors increased with increasing Al content. The XRD and SIMS results showed that there was no significant difference of the dislocation density and carbon impurity concentration in five AlxGa1-xN samples with different Al content. This was likely not the main reason for the difference in dark leakage current of AlxGa1-xN detectors. However, the results of positron annihilation showed that the vacancy defect concentration increased with
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43

Wang, Yekan, Michael Evan Liao, Kenny Huynh, et al. "Impact of Substrate Defects on Vertical GaN Device Leakage Behavior." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1309. http://dx.doi.org/10.1149/ma2022-01311309mtgabs.

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In this work, the effects of the substrate defects on the reverse leakage behavior of vertical GaN Schottky and p-i-n diodes are investigated. A direct connection between the reverse leakage behavior of GaN based vertical devices and the defect characteristics of the substrate was achieved. The difference in the leakage current can be as high as 6 orders of magnitude for vertical GaN p-i-n diodes at -200V, using HVPE substrate with inhomogeneous defect distributions (with dot-cores). For comparison, using HVPE substrate with uniform defect distribution (no cores), the p-i-n diodes show much mo
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44

Wu, Qiuju, Qing Yu, Gang He, et al. "Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment." Nanomaterials 13, no. 11 (2023): 1740. http://dx.doi.org/10.3390/nano13111740.

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In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectroscopy (XPS) analyses have showed that the ALD-derived Al2O3 passivation layer remarkably prevents the formation of the low-k hydroxides generated by moisture absorption of the gate oxide and greatly optimizes the gate dielectric properties. Electrical performance measurements of metal oxide semiconductor (
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45

Jayadevan, Kampurath P., Chi-Yi Liu, and Tseung-Yuen Tseng. "Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Thin Films." Journal of the American Ceramic Society 88, no. 9 (2005): 2456–60. http://dx.doi.org/10.1111/j.1551-2916.2005.00441.x.

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46

Wu, Min-Ci, Yi-Hsin Ting, Jui-Yuan Chen, and Wen-Wei Wu. "A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current." ECS Meeting Abstracts MA2020-01, no. 22 (2020): 1298. http://dx.doi.org/10.1149/ma2020-01221298mtgabs.

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47

Simões, A. Z., L. S. Cavalcante, F. Moura, E. Longo, and J. A. Varela. "Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films." Journal of Alloys and Compounds 509, no. 17 (2011): 5326–35. http://dx.doi.org/10.1016/j.jallcom.2011.02.030.

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48

El-Hag, Ayman H., S. H. Jayaram, and E. A. Cherney. "Calculation of leakage current density of silicone rubber insulators under accelerated aging conditions." Journal of Electrostatics 67, no. 1 (2009): 48–53. http://dx.doi.org/10.1016/j.elstat.2008.11.006.

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49

Akashe, Shyam, and Sanjay Sharma. "High density and low leakage current based SRAM cell using 45 nm technology." International Journal of Electronics 100, no. 4 (2013): 536–52. http://dx.doi.org/10.1080/00207217.2012.713023.

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50

Salem, Ali Ahmed, Kwan Yiew Lau, Zulkurnain Abdul-Malek, et al. "Polymeric Insulator Conditions Estimation by Using Leakage Current Characteristics Based on Simulation and Experimental Investigation." Polymers 14, no. 4 (2022): 737. http://dx.doi.org/10.3390/polym14040737.

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The current work contributes an estimate of the time-frequency characteristics of a leakage current in assessing the health condition of a polluted polymeric insulator. A 33 kV polymer insulator string was subjected to a series of laboratory tests under a range of environmental conditions, including pollution, wetting rate (WR), non-soluble deposit density (NSDD), and non-uniform distribution pollution (FT/B). The temporal and frequency features of the leakage current were then extracted and used as assessment indicators for insulator conditions based on laboratory test findings. Two indices w
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