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Artykuły w czasopismach na temat „Memory device”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Poduval, Karthik. "Virtual Memory to Memory Scaler Hardware Device Using QEMU." International Journal of Science and Research (IJSR) 11, no. 8 (2022): 1507–9. http://dx.doi.org/10.21275/sr24506180220.

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Jha, Rashmi, Vamshi Kiran Kiran Gogi, and Siddharth Barve. "(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices." ECS Meeting Abstracts MA2024-01, no. 57 (2024): 3011. http://dx.doi.org/10.1149/ma2024-01573011mtgabs.

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Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of no

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3

Kim, Dongshin, Ik-Jyae Kim, and Jang-Sik Lee. "Memory Devices for Flexible and Neuromorphic Device Applications." Advanced Intelligent Systems 3, no. 5 (2021): 2000206. http://dx.doi.org/10.1002/aisy.202000206.

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Kim, Byeongjeong, Chandreswar Mahata, Hojeong Ryu, Muhammad Ismail, Byung-Do Yang, and Sungjun Kim. "Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures." Coatings 11, no. 4 (2021): 451. http://dx.doi.org/10.3390/coatings11040451.

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Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied

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5

Novosad, V., Y. Otani, A. Ohsawa, et al. "Novel magnetostrictive memory device." Journal of Applied Physics 87, no. 9 (2000): 6400–6402. http://dx.doi.org/10.1063/1.372719.

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Tatematsu, Take. "4464750 Semiconductor memory device." Microelectronics Reliability 25, no. 2 (1985): 401. http://dx.doi.org/10.1016/0026-2714(85)90179-9.

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Jin, Risheng, Keli Shi, Beibei Qiu, and Shihua Huang. "Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate." Nanotechnology 33, no. 2 (2021): 025201. http://dx.doi.org/10.1088/1361-6528/ac2dc5.

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Abstract Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory

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8

Ha, Yejin, Hyungsoon Shin, Wookyung Sun, and Jisun Park. "Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM." Micromachines 12, no. 10 (2021): 1209. http://dx.doi.org/10.3390/mi12101209.

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A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM). Most studies on 1T-DRAM focus on device-level operation to replace 1T-1C-DRAM. To utilize 1T-DRAM as a memory device, we must understand its circuit-level operation, in addition to its device-level operation. Therefore, we studied the memory performance depending on device location in an array circuit and the circuit configuration by using the 1T-DRAM structure reported in the literature. The simu

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9

Wang, Lu, Yukai Zhang, Peng Zhang, and Dianzhong Wen. "Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites." Nanomaterials 12, no. 17 (2022): 3061. http://dx.doi.org/10.3390/nano12173061.

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Organic-resistance random access memory has high application potential in the field of next-generation green nonvolatile memory. Because of their biocompatibility and environmental friendliness, natural biomaterials are suitable for the fabrication of biodegradable and physically transient resistive switching memory devices. A flexible memory device with physically transient properties was fabricated with silver ions and egg albumen composites as active layers, which exhibited characteristics of write-once-read-many-times (WORM), and the incorporation of silver ions improved the ON/OFF current

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10

Yu, Zhiqiang, Xu Han, Jiamin Xu, et al. "The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device." Sensors 23, no. 7 (2023): 3480. http://dx.doi.org/10.3390/s23073480.

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In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (RHRS/RLRS) of about two orders of magnitude. The conduction behaviors of the W/TiO2/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the RHRS/RLRS of the W/TiO2/FTO memory device is obviou

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11

Ju, Dongyeol, Sunghun Kim, Junwon Jang, and Sungjun Kim. "Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System." Materials 16, no. 18 (2023): 6136. http://dx.doi.org/10.3390/ma16186136.

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RRAM devices operating based on the creation of conductive filaments via the migration of oxygen vacancies are widely studied as promising candidates for next-generation memory devices due to their superior memory characteristics. However, the issues of variation in the resistance state and operating voltage remain key issues that must be addressed. In this study, we propose a TaOx/SiO2 bilayer device, where the inserted SiO2 layer localizes the conductive path, improving uniformity during cycle-to-cycle endurance and retention. Transmission electron microscopy (TEM) and X-ray photoelectron sp

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12

Yang, Yang, Liping Ma, and Jianhua Wu. "Organic Thin-Film Memory." MRS Bulletin 29, no. 11 (2004): 833–37. http://dx.doi.org/10.1557/mrs2004.237.

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AbstractRecently, organic nonvolatile memory devices have attracted considerable attention due to their low cost and high performance. This article reviews recent developments in organic nonvolatile memory and describes in detail an organic electrical bistable device (OBD) that has potential for applications. The OBD consists of a tri-layer of organics/metal nanoclusters/organics sandwiched between top and bottom electrodes. A sufficiently high applied bias causes the metal nanoparticle layer to become polarized, resulting in charge storage near the two metal/organic interfaces. This stored ch

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13

Tsoukalas, Dimitris, and Emanuele Verrelli. "Inorganic Nanoparticles for either Charge Storage or Memristance Modulation." Advances in Science and Technology 77 (September 2012): 196–204. http://dx.doi.org/10.4028/www.scientific.net/ast.77.196.

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We present prototype memory devices using metallic and metal oxide nanoparticles obtained by a physical deposition technique. The two memory device examples demonstrated concern the use of platinum nanoparticles for flash-type memories and the use of titanium oxide nanoparticles for resistive memories. Both approaches give interesting device memory properties with resistive memories being still in an early exploratory phase.

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14

Wang, Lu, Yukai Zhang, and Dianzhong Wen. "Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions." Nanomaterials 11, no. 8 (2021): 1973. http://dx.doi.org/10.3390/nano11081973.

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In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, th

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15

Yu, Zhiqiang, Jiamin Xu, Baosheng Liu та ін. "A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe2O3 Nanowire Arrays". Molecules 28, № 9 (2023): 3835. http://dx.doi.org/10.3390/molecules28093835.

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A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-Fe2O3/FTO memory device with the nonvolatile resistive switching behavior has been achieved. The resistance ratio (RHRS/RLRS) of the W/α-Fe2O3/FTO memory device exceeds two orders of magnitude, which can be preserved for more than 103s without obvious decline. Furthermore, the carrier transport properties of the W/α-Fe2O3/FTO memory device are dominated by the Ohmic conduction mechanism in the low resistance state and trap-controll

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16

Li, Ning, Hsinyu Tsai, Vijay Narayanan, and Malte Rasch. "Impact of analog memory device failure on in-memory computing inference accuracy." APL Machine Learning 1, no. 1 (2023): 016104. http://dx.doi.org/10.1063/5.0131797.

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In-memory computing using analog non-volatile memory (NVM) devices can improve the speed and reduce the latency of deep neural network (DNN) inference. It has been recently shown that neuromorphic crossbar arrays, where each weight is implemented using analog conductance values of phase-change memory devices, achieve competitive accuracy and high power efficiency. However, due to the large amount of NVMs needed and the challenge for making analog NVM devices, these chips typically include some failed devices from fabrication or developed over time. We study the impact of these failed devices o

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17

Hong, Yoonseok, Shounan An, Sunwoo Im, Jaegeon Jo, and Insoo Oh. "MONICA2: Mobile Neural Voice Command Assistants towards Smaller and Smarter." Proceedings of the AAAI Conference on Artificial Intelligence 36, no. 11 (2022): 13176–78. http://dx.doi.org/10.1609/aaai.v36i11.21719.

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In this paper, we propose on-device voice command assistants for mobile games to increase user experiences even in hands-busy situations such as driving and cooking. Since most of the current mobile games cost large memory (e.g. more than 1GB memory), so it is necessary to reduce memory usage further to integrate voice commands systems on mobile clients. Therefore a need to design an on-device automatic speech recognition system that costs minimal memory and CPU resources rises. To this end, we apply cross layer parameter sharing to Conformer, named MONICA2 which results in lower memory usage

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18

White, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.

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This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effe

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19

Wang, Lu, Yukai Zhang, Peng Zhang, and Dianzhong Wen. "Flexible Transient Resistive Memory Based on Biodegradable Composites." Nanomaterials 12, no. 19 (2022): 3531. http://dx.doi.org/10.3390/nano12193531.

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Physical transient electronics have attracted more attention as the basis for building green electronics and biomedical devices. However, there are difficulties in selecting materials for the fabricated devices to take into account both biodegradability and high performance. In this paper, a physically transient resistive random-access memory (RRAM) device was fabricated by using egg protein and graphene quantum dot composites as active layers. The sandwich structure composed of Al/EA:GQD/ITO shows a good write-once-multiple-read memory characteristic, and the introduced GQD improves the switc

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20

Katanosaka, Naok. "4885721 Semiconductor memory device with redundant memory cells." Microelectronics Reliability 30, no. 6 (1990): ii. http://dx.doi.org/10.1016/0026-2714(90)90388-4.

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21

Li, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan, and Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.

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This article reviews the recent research of molecular memory based on self-assembled nanowire–molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In

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22

Chung, Euiyoung, and So Young Sohn. "Processing-in-Memory Development Strategy for AI Computing Using Main-Path and Doc2Vec Analyses." Sustainability 15, no. 16 (2023): 12439. http://dx.doi.org/10.3390/su151612439.

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Processing-in-Memory (PiM), which combines a memory device with a Processing Unit (PU) into an integrated chip, has drawn special attention in the field of Artificial Intelligence semiconductors. Currently, in the development and commercialization of PiM’s technology, there are challenges in the hegemony competition between the PU and memory device industries. In addition, there are challenges in finding strategic partnerships rather than independent development due to the complexity of technological development caused by heterogeneous chips. In this study, patent Main Path Analysis (MPA) is u

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23

Han, Hoonhee, Seokmin Jang, Duho Kim, et al. "Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel." Electronics 11, no. 1 (2021): 53. http://dx.doi.org/10.3390/electronics11010053.

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The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amo

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24

Awais, Muhammad, Feng Zhao, and Kuan Yew Cheong. "Bio-Organic Based Resistive Switching Random-Access Memory." Solid State Phenomena 352 (October 30, 2023): 85–93. http://dx.doi.org/10.4028/p-tbxv2r.

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A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with limited memory density, operating speed, power consumption, manufacturability, and data security. Of the emerging technologies, resistive switching technology is one of the most promising next generation non-volatile random-access memories. The fun

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Patil, Harshada, Honggyun Kim, Shania Rehman, et al. "Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction." Nanomaterials 11, no. 2 (2021): 359. http://dx.doi.org/10.3390/nano11020359.

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Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filamen

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26

Gong, Minglei, Wei Li, Fei Fan, Yu Chen, and Bin Zhang. "In-Situ Surface Modification of ITO Substrate via Bio-Inspired Mussel Chemistry for Organic Memory Devices." Biomimetics 7, no. 4 (2022): 237. http://dx.doi.org/10.3390/biomimetics7040237.

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The development of organic memory devices, regarding factors such as structure construction, principle exploration, and material design, has become a powerful supplement to traditional silicon-based information storage. The in-situ growth of materials on substrate surfaces can achieve closer bonding between materials and electrodes. Bio-inspired by mussel chemistry, polydopamine (PDA) was self-assembled on a flexible substrate as a connecting layer, and 2-bromoiso-butyryl bromide (BiBB) was utilized as an initiator for the polymerization of an iridium complex via surface-initiated atom-transfe

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Wang, Lu, Yukai Zhang, Peng Zhang, and Dianzhong Wen. "Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots." Nanomaterials 12, no. 22 (2022): 3976. http://dx.doi.org/10.3390/nano12223976.

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Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ult

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Pyo, Juyeong, Hoesung Ha, and Sungjun Kim. "Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOx Thin Layer." Materials 15, no. 24 (2022): 9081. http://dx.doi.org/10.3390/ma15249081.

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ITO/WOx/TaN and ITO/WOx/AlOx/TaN memory cells were fabricated as a neuromorphic device that is compatible with CMOS. They are suitable for the information age, which requires a large amount of data as next-generation memory. The device with a thin AlOx layer deposited by atomic layer deposition (ALD) has different electrical characteristics from the device without an AlOx layer. The low current is achieved by inserting an ultra-thin AlOx layer between the switching layer and the bottom electrode due to the tunneling barrier effect. Moreover, the short-term memory characteristics in bilayer dev

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Zhang, Qianyi, Binbin Hou, Jianya Zhang, et al. "Flexible light-stimulated artificial synapse based on detached (In,Ga)N thin film for neuromorphic computing." Nanotechnology 35, no. 23 (2024): 235202. http://dx.doi.org/10.1088/1361-6528/ad2ee3.

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Abstract Because of wide range of applications, the flexible artificial synapse is an indispensable part for next-generation neural morphology computing. In this work, we demonstrate a flexible synaptic device based on a lift-off (In,Ga)N thin film successfully. The synaptic device can mimic the learning, forgetting, and relearning functions of biological synapses at both flat and bent states. Furthermore, the synaptic device can simulate the transition from short-term memory to long-term memory successfully under different bending conditions. With the high flexibility, the excitatory post-syn

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Yang, Liubin, Xiushuo Gu, Min Zhou, Jianya Zhang, Yonglin Huang, and Yukun Zhao. "Deep-UV-photo-excited synaptic Ga₂O₃ nano-device with low-energy consumption for neuromorphic computing." Journal of Semiconductors 46, no. 2 (2025): 022401. https://doi.org/10.1088/1674-4926/24050037.

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Abstract Synaptic nano-devices have powerful capabilities in logic, memory and learning, making them essential components for constructing brain-like neuromorphic computing systems. Here, we have successfully developed and demonstrated a synaptic nano-device based on Ga2O3 nanowires with low energy consumption. Under 255 nm light stimulation, the biomimetic synaptic nano-device can stimulate various functionalities of biological synapses, including pulse facilitation, peak time-dependent plasticity and memory learning ability. It is found that the artificial synaptic device based on Ga2O3 nano

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31

Abdullah, Dhuha, and Reyath Mahmood. "Design Flash Memory Programmer Device." AL-Rafidain Journal of Computer Sciences and Mathematics 3, no. 1 (2006): 55–83. http://dx.doi.org/10.33899/csmj.2006.164045.

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Gunlycke, Daniel, Denis A. Areshkin, Junwen Li, John W. Mintmire, and Carter T. White. "Graphene Nanostrip Digital Memory Device." Nano Letters 7, no. 12 (2007): 3608–11. http://dx.doi.org/10.1021/nl0717917.

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Li, Liang, Qi-Dan Ling, Siew-Lay Lim, et al. "A flexible polymer memory device." Organic Electronics 8, no. 4 (2007): 401–6. http://dx.doi.org/10.1016/j.orgel.2007.02.002.

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Urrios, Arturo, Javier Macia, Romilde Manzoni, et al. "A Synthetic Multicellular Memory Device." ACS Synthetic Biology 5, no. 8 (2016): 862–73. http://dx.doi.org/10.1021/acssynbio.5b00252.

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Lim, Doohyeok, Jaemin Son, Kyoungah Cho, and Sangsig Kim. "Quasi‐Nonvolatile Silicon Memory Device." Advanced Materials Technologies 5, no. 12 (2020): 2000915. http://dx.doi.org/10.1002/admt.202000915.

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Kaminaga, Akiko, Vladimir K. Vanag, and Irving R. Epstein. "A Reaction–Diffusion Memory Device." Angewandte Chemie 118, no. 19 (2006): 3159–61. http://dx.doi.org/10.1002/ange.200600400.

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Kang, Jeong Won, and Ho Jung Hwang. "‘Carbon nanotube shuttle’ memory device." Carbon 42, no. 14 (2004): 3018–21. http://dx.doi.org/10.1016/j.carbon.2004.06.014.

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Kaminaga, Akiko, Vladimir K. Vanag, and Irving R. Epstein. "A Reaction–Diffusion Memory Device." Angewandte Chemie International Edition 45, no. 19 (2006): 3087–89. http://dx.doi.org/10.1002/anie.200600400.

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Ahmad, Hamza Sajjad, Muhammad Junaid Arshad, and Muhammad Sohail Akram. "Device Authentication and Data Encryption for IoT Network by Using Improved Lightweight SAFER Encryption With S-Boxes." International Journal of Embedded and Real-Time Communication Systems 12, no. 3 (2021): 1–13. http://dx.doi.org/10.4018/ijertcs.2021070101.

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To send data over the network, devices need to authenticate themselves within the network. After authentication, the device will be able to send the data in-network. After authentication, secure communication of devices is an important task that is done with an encryption method. IoT network devices have a very small circuit with low resources and low computation power. By considering low power, less memory, low computation, and all the aspect of IoT devices, an encryption technique is needed that is suitable for this type of device. As IoT networks are heterogeneous, each device has different

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40

Liang, Lijuan, Wenjuan He, Rong Cao, et al. "Non-Volatile Transistor Memory with a Polypeptide Dielectric." Molecules 25, no. 3 (2020): 499. http://dx.doi.org/10.3390/molecules25030499.

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Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an

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Lee, Subin, Somi Kim, and Hocheon Yoo. "Contribution of Polymers to Electronic Memory Devices and Applications." Polymers 13, no. 21 (2021): 3774. http://dx.doi.org/10.3390/polym13213774.

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Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization

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Li, Lei. "Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices." Nanomaterials 9, no. 4 (2019): 518. http://dx.doi.org/10.3390/nano9040518.

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A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behavior

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Chen, Ming-Te, and Hsuan-Chao Huang. "A Practical and Efficient Node Blind SignCryption Scheme for the IoT Device Network." Applied Sciences 12, no. 1 (2021): 278. http://dx.doi.org/10.3390/app12010278.

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In recent years, Internet of Things (IoT for short) research has become one of the top ten most popular research topics. IoT devices also embed many sensing chips for detecting physical signals from the outside environment. In the wireless sensing network (WSN for short), a human can wear several IoT devices around her/his body such as a smart watch, smart band, smart glasses, etc. These IoT devices can collect analog environment data around the user’s body and store these data into memory after data processing. Thus far, we have discovered that some IoT devices have resource limitations such

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Shin, Youngjoo. "A VM-Based Detection Framework against Remote Code Execution Attacks for Closed Source Network Devices." Applied Sciences 9, no. 7 (2019): 1294. http://dx.doi.org/10.3390/app9071294.

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Remote code execution attacks against network devices become major challenges in securing networking environments. In this paper, we propose a detection framework against remote code execution attacks for closed source network devices using virtualization technologies. Without disturbing a target device in any way, our solution deploys an emulated device as a virtual machine (VM) instance running the same firmware image as the target in a way that ingress packets are mirrored to the emulated device. By doing so, remote code execution attacks mounted by maliciously crafted packets will be captu

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Wang, Lu, Hongyu Zhu, Ze Zuo, and Dianzhong Wen. "Full-function logic circuit based on egg albumen resistive memory." Applied Physics Letters 121, no. 24 (2022): 243505. http://dx.doi.org/10.1063/5.0124826.

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The logic gate is the basic unit of a digital circuit structure. The operation, memory, I/O, and other reading and writing functions of computer systems require logic circuits. Logic gates based on resistive memory can make existing integrated circuits denser, smaller, faster, and use fewer devices. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA):Au nanoparticles/PMMA/Al multilayer biological resistive random access memory was prepared based on the natural biological material—egg albumen (EA). The device has bipolar switching behavior, a higher switching current ratio, a lowe

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Ke, Wang, Xiaoting Yang, and Tongyu Liu. "Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite." Materials 14, no. 21 (2021): 6629. http://dx.doi.org/10.3390/ma14216629.

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In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO m

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Naqi, Muhammad, Nayoung Kwon, Sung Jung, et al. "High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles." Nanomaterials 11, no. 5 (2021): 1101. http://dx.doi.org/10.3390/nano11051101.

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Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from −20 V to +20 V back and fo

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Zhu, Libai, Xiaoguang Xu, Meiling Li, et al. "A programmable multi-state logic-in-memory in a single unit based on spin–orbit torque." Applied Physics Letters 121, no. 21 (2022): 212403. http://dx.doi.org/10.1063/5.0131399.

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Spintronic device based on spin–orbit torque (SOT) is a potential candidate for the next-generation memory and logic devices. Here, we report a SOT-based programmable multi-state logic-in-memory in a single unit. Multi-step magnetization switching behaviors can be achieved in the device with a stacking structure based on Pt/Co bilayers and an Al2O3 spacer layer by varying the thickness of Co and Pt layers. Moreover, five logic gates (NOR, OR, AND, NAND, and NOT) have also been realized by controlling the current and magnetic field. This multi-state logic-in-memory opens a simple and effective

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Alahmadi, Ahmed N. M., and Khasan S. Karimov. "A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device." Polymers 13, no. 10 (2021): 1594. http://dx.doi.org/10.3390/polym13101594.

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Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. For the first time, this study reports that the novel conducting polymer Poly-N-Epoxy-Propyl Carbazole (PEPC) can offer effective memory storage behavior. In the current research, the electrical characterization of a single layer memory device (metal/polymer/metal) using PEPC, with or without doping o

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Park, Eunpyo, Dong Yeon Woo, Gichang Noh, et al. "IGZO charge trap flash device for reconfigurable logic functions." Applied Physics Letters 124, no. 12 (2024). http://dx.doi.org/10.1063/5.0189130.

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We fabricated an indium gallium zinc oxide (IGZO) charge trap flash (CTF) device for logic-in-memory (LIM) applications. Initially, the nonvolatile memory characteristics of the IGZO CTF device were investigated under charge trapping and detrapping states in 104 s retention tests. Next, we constructed a common-source amplifier circuit containing the IGZO CTF device and demonstrated various input–output signal relationships by modulating the memory state of the device. Finally, we used interconnected IGZO CTF devices to demonstrate reconfigurable logic functions. Using series- and parallel-conn

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