Gotowe bibliografie tematyczne / N-type silicon

Spis treści

  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Książki
  4. Części książek
  5. Streszczenia konferencji
  6. Raporty organizacyjne

Gotowa bibliografia na temat „N-type silicon”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 25 lipca 2025

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Artykuły w czasopismach na temat "N-type silicon"

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Guyader, F., J. K. Jung, M. Guendouz, M. Sarret, and P. Joubert. "n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films." Solid State Phenomena 51-52 (May 1996): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.211.

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Hovorka, Miloš, Filip Mika, Petr Mikulík, and Lud\\v{e}k Frank. "Profiling N-Type Dopants in Silicon." MATERIALS TRANSACTIONS 51, no. 2 (2010): 237–42. http://dx.doi.org/10.2320/matertrans.mc200910.

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Kang, Ying, and Jacob Jorné. "Photoelectrochemical dissolution of N-type silicon." Electrochimica Acta 43, no. 16-17 (1998): 2389–98. http://dx.doi.org/10.1016/s0013-4686(97)10150-5.

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Repo, Päivikki, Jan Benick, Ville Vähänissi, et al. "N-type Black Silicon Solar Cells." Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.

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da Silva, Wilson J., Ivo A. Hümmelgen, and Regina M. Q. Mello. "Sulfonated polyaniline/n-type silicon junctions." Journal of Materials Science: Materials in Electronics 20, no. 2 (2008): 123–26. http://dx.doi.org/10.1007/s10854-008-9645-x.

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Park, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer, and Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells." Solar Energy Materials and Solar Cells 93, no. 6-7 (2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.

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Ohmukai, Masato. "Structure of Porous Silicon Formed on n-Type Silicon Wafer." World Journal of Engineering and Technology 13, no. 02 (2025): 291–98. https://doi.org/10.4236/wjet.2025.132018.

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El Amrani, A., R. Si-Kaddour, M. Maoudj, and C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface." Materials Science-Poland 37, no. 3 (2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.

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AbstractThe SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/S
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HÄCKEL, S., J. DONEIT, A. PINKOWSKI, and W. J. LORENZ. "DIODE CHARACTERISTICS OF YBa2Cu3O7/n- TYPE SILICON CONTACTS." Modern Physics Letters B 02, no. 11n12 (1988): 1303–8. http://dx.doi.org/10.1142/s0217984988001284.

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The temperature dependences of diode characteristics were measured on high-T c -superconducting YBa 2 Cu 3 O 7 (polycrystalline)/n-type silicon (monocrystalline) contacts using a common two-pole-technique at low frequencies. The non-superconducting p-type semiconductor YBa 2 Cu 3 O 6.5 (polycrystalline) served as a reference substance. The temperature coefficients of the diffusion voltage, the diffusion current and the saturation current were found to be finite at T>T c , but almost zero at T≤T c . At T=78 K , the diffusion voltage of the diode YBa 2 Cu 3 O 7/n-type silicon was about 200 mV
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KUROKAWA, Akinari, Tetsuo SAKKA, and Yukio H. OGATA. "Maskless Copper Patterning on n-Type Silicon." Journal of The Surface Finishing Society of Japan 56, no. 5 (2005): 281–85. http://dx.doi.org/10.4139/sfj.56.281.

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Rozprawy doktorskie na temat "N-type silicon"

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Porter, Nicholas Andrew. "Magnetoresistance in n-type silicon." Thesis, University of Leeds, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534834.

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Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface
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Scansen, Donald W. "Excess noise in n-type hydrogenated amorphous silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq23898.pdf.

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Valavanis, Alexander. "n-type silicon-germanium based terahertz quantum cascade lasers." Thesis, University of Leeds, 2009. http://etheses.whiterose.ac.uk/1262/.

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Terahertz quantum cascade lasers (THz QCLs) have many potential applications, including detection of skin tumours, and of illicit drugs and explosives. To date, all THz QCLs use III–V compound semiconductors, but silicon (Si)-based devices could offer significant benefits. The high thermal conductivity of Si may allow higher operating temperatures, removing the need for large and costly cryogenic coolers, and the non-polar nature of Si may allow a wider range of emission frequencies. The mature Si processing technology may reduce fabrication costs and ultimately allow integration of THz QCLs w
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Merazga, Amar. "Steady state and transient photoconductivity in n-type amorphous silicon." Thesis, University of Abertay Dundee, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277887.

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Kumar, Neeraj. "Fabrication of n-type porous silicon membranes for sensing applications." Doctoral thesis, Università degli studi di Trento, 2013. https://hdl.handle.net/11572/367916.

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In this work we have proposed a PSi based flow through bio-sensor able to perform fast and sensitive real time analysis. The present work is summarized as: 1. We have presented a simple fabrication method for n-type PSi free-standing membranes with straight and smooth pores of up to ~100nm of diameter. 2. A two solution method is presented to fabricate free standing porous membranes. 3. Our process maintains a very good planarity of the interface as demonstrated by the fabrication of very thin and large area free standing membranes. No HF concentration gradient effect is noticed. 4. We found t
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Kumar, Neeraj. "Fabrication of n-type porous silicon membranes for sensing applications." Doctoral thesis, University of Trento, 2013. http://eprints-phd.biblio.unitn.it/1127/1/thesis.pdf.

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In this work we have proposed a PSi based flow through bio-sensor able to perform fast and sensitive real time analysis. The present work is summarized as: 1. We have presented a simple fabrication method for n-type PSi free-standing membranes with straight and smooth pores of up to ~100nm of diameter. 2. A two solution method is presented to fabricate free standing porous membranes. 3. Our process maintains a very good planarity of the interface as demonstrated by the fabrication of very thin and large area free standing membranes. No HF concentration gradient effect is noticed. 4. We fo
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Edwards, Matthew Bruce ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Screen and stencil print technologies for industrial N-type silicon solar cells." Publisher:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2008. http://handle.unsw.edu.au/1959.4/41372.

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To ensure that photovoltaics contributes significantly to future world energy production, the cost per watt of producing solar cells needs to be drastically reduced. The use of n-type silicon wafers in conjunction with industrial print technology has the potential to lower the cost per watt of solar cells. The use of n-type silicon is expected to allow the use of cheaper Cz substrates, without a corresponding loss in device efficiency. Printed metallisation is well utilised by the PV industry due to its low cost, yet there are few examples of its application to n-type solar cells. This thesis
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Lam, Chi-hung, and 林志雄. "Defect study of N-type 6H silicon carbide using positron lifetime spectroscopy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29753260.

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Lam, Chi-hung. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36299996.

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Książki na temat "N-type silicon"

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. National Aeronautics and Space Administration, 1995.

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United States. National Aeronautics and Space Administration., ed. Electrical characterization of 6H crystalline silicon carbide. National Aeronautics and Space Administration, 1994.

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United States. National Aeronautics and Space Administration., ed. Electrical characterization of 6H crystalline silicon carbide. National Aeronautics and Space Administration, 1994.

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United States. National Aeronautics and Space Administration. and Westinghouse Electric Corporation. Advanced Energy Systems Division., eds. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. National Aeronautics and Space Administration, 1985.

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United States. National Aeronautics and Space Administration. and Westinghouse Electric Corporation. Advanced Energy Systems Division., eds. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. National Aeronautics and Space Administration, 1985.

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Muñoz, Delfina, and Radovan Kopecek, eds. n-Type Crystalline Silicon Photovoltaics: Technology, applications and economics. Institution of Engineering and Technology, 2022. http://dx.doi.org/10.1049/pbpo175e.

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Munoz, Delfina, and Radovan Kopecek. N-Type Crystalline Silicon Photovoltaics: Technology, Applications and Economics. Institution of Engineering & Technology, 2023.

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Części książek na temat "N-type silicon"

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Ke, Y., R. P. Devaty, and W. J. Choyke. "Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces." In Silicon Carbide. Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch16.

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Pensl, Gerhard, Svetlana Beljakowa, Thomas Frank, et al. "Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors." In Silicon Carbide. Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch8.

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Ke, Yue, Fei Yan, Robert P. Devaty, and W. J. Choyke. "Columnar Pore Growth in n-Type 6H SiC." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.739.

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Levy-Clement, C. "Characteristics of porous n-type silicon obtained by photoelectrochemical etching." In Porous Silicon Science and Technology. Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9_20.

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Castaldini, A., D. Cavalcoli, and A. Cavallini. "On the Dirty Contacts on N-Type Silicon." In Crucial Issues in Semiconductor Materials and Processing Technologies. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_13.

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Wellmann, Peter J., Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, and Ulrike Künecke. "Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.79.

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Rauls, E., U. Gerstmann, S. Greulich-Weber, Kurt Semmelroth, Gerhard Pensl, and Eugene E. Haller. "New Aspects in n-type Doping of SiC with Phosphorus." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.609.

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Huang, W., T. Khan, and T. P. Chow. "Asymmetric Interface Densities on n and p Type GaN MOS Capacitors." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1525.

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Pinheiro, M. V. B., E. Rauls, U. Gerstmann, S. Greulich-Weber, Johann Martin Spaeth, and Harald Overhof. "Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.551.

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Ewing, D. J., Qamar-ul Wahab, Sergey P. Tumakha, et al. "A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.911.

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Streszczenia konferencji na temat "N-type silicon"

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Hassan, Vinayak Vishwanath, Asma Attariabad, Tihomir Kneževic, and Lis Nanver. "UV to NIR detection with p+n-type PureB Ge-on-Si photodiodes fabricated on lightly-doped n-Si substrates." In Silicon Photonics XX, edited by Graham T. Reed and Jonathan Bradley. SPIE, 2025. https://doi.org/10.1117/12.3042941.

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Podstránský, Jáchym, Matthias Hausladen, Jakub Zlámal, Alexandr Knápek, and Rupert Schreiner. "Single Column Multiple Electron Beam Imaging from N-Type Silicon." In 2024 37th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2024. http://dx.doi.org/10.1109/ivnc63480.2024.10652470.

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Sinha, Archana, Jean-Nicolas Jaubert, and Todd Karin. "UV-Induced Degradation Susceptibility of Industrial N-Type Silicon High-Efficiency PV Modules." In 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC). IEEE, 2024. http://dx.doi.org/10.1109/pvsc57443.2024.10748652.

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Yonezaki, Haruki, Takayuki Mori, and Jiro Ida. "Steep Slope Device “N-type Gate-Controlled Carrier-Injection SOI-Transistor”: Suppression of Hysteresis by Ar-ion Implantation and Possibility of CMOS." In 2024 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2024. http://dx.doi.org/10.1109/snw63608.2024.10639213.

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Yang, Seungwon, Younghwan Son, Sung Dae Suk, et al. "Flicker noise in N-type and P-type silicon nanowire transistors." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418460.

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Bessette, Jonathan T., Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel. "High n-type Doping for Ge Lasers." In Integrated Photonics Research, Silicon and Nanophotonics. OSA, 2011. http://dx.doi.org/10.1364/iprsn.2011.ituc5.

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Scalari, Giacomo, David Stark, Muhammad Mirza, et al. "THz electroluminescence from n-type Ge/SiGe quantum cascade structures." In Silicon Photonics XVII, edited by Graham T. Reed and Andrew P. Knights. SPIE, 2022. http://dx.doi.org/10.1117/12.2606541.

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Kersten, Friederike, Sven Rißland, Christian Taubitz, et al. "Artificial lab degradation effects in n-type modules – Surface polarization (PID-p)." In SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0140756.

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Huang, Shaoyun, Maki Shimizu, Naoki Fukata, Takashi Sekiguchi, Tomohiro Yamaguchi, and Koji Ishibashi. "An n-type silicon nanowire dot based single-electron transistor." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418430.

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Cai, Yan, Rodolfo Camacho-Aguilera, Jonathan T. Bessette, Lionel C. Kimerling, and Jurgen Michel. "High n-type doped germanium for electrically pumped Ge laser." In Integrated Photonics Research, Silicon and Nanophotonics. OSA, 2012. http://dx.doi.org/10.1364/iprsn.2012.im3a.5.

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Raporty organizacyjne na temat "N-type silicon"

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Das, Ujjwal, Ajeet Rohatgi, Clemens Heske, et al. Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/1859832.

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