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Rozprawy doktorskie na temat „N-type silicon”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

Porter, Nicholas Andrew. "Magnetoresistance in n-type silicon." Thesis, University of Leeds, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534834.

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Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface

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Scansen, Donald W. "Excess noise in n-type hydrogenated amorphous silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq23898.pdf.

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Valavanis, Alexander. "n-type silicon-germanium based terahertz quantum cascade lasers." Thesis, University of Leeds, 2009. http://etheses.whiterose.ac.uk/1262/.

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Terahertz quantum cascade lasers (THz QCLs) have many potential applications, including detection of skin tumours, and of illicit drugs and explosives. To date, all THz QCLs use III–V compound semiconductors, but silicon (Si)-based devices could offer significant benefits. The high thermal conductivity of Si may allow higher operating temperatures, removing the need for large and costly cryogenic coolers, and the non-polar nature of Si may allow a wider range of emission frequencies. The mature Si processing technology may reduce fabrication costs and ultimately allow integration of THz QCLs w

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5

Merazga, Amar. "Steady state and transient photoconductivity in n-type amorphous silicon." Thesis, University of Abertay Dundee, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277887.

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6

Kumar, Neeraj. "Fabrication of n-type porous silicon membranes for sensing applications." Doctoral thesis, Università degli studi di Trento, 2013. https://hdl.handle.net/11572/367916.

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In this work we have proposed a PSi based flow through bio-sensor able to perform fast and sensitive real time analysis. The present work is summarized as: 1. We have presented a simple fabrication method for n-type PSi free-standing membranes with straight and smooth pores of up to ~100nm of diameter. 2. A two solution method is presented to fabricate free standing porous membranes. 3. Our process maintains a very good planarity of the interface as demonstrated by the fabrication of very thin and large area free standing membranes. No HF concentration gradient effect is noticed. 4. We found t

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Kumar, Neeraj. "Fabrication of n-type porous silicon membranes for sensing applications." Doctoral thesis, University of Trento, 2013. http://eprints-phd.biblio.unitn.it/1127/1/thesis.pdf.

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In this work we have proposed a PSi based flow through bio-sensor able to perform fast and sensitive real time analysis. The present work is summarized as: 1. We have presented a simple fabrication method for n-type PSi free-standing membranes with straight and smooth pores of up to ~100nm of diameter. 2. A two solution method is presented to fabricate free standing porous membranes. 3. Our process maintains a very good planarity of the interface as demonstrated by the fabrication of very thin and large area free standing membranes. No HF concentration gradient effect is noticed. 4. We fo

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8

Edwards, Matthew Bruce ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Screen and stencil print technologies for industrial N-type silicon solar cells." Publisher:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2008. http://handle.unsw.edu.au/1959.4/41372.

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To ensure that photovoltaics contributes significantly to future world energy production, the cost per watt of producing solar cells needs to be drastically reduced. The use of n-type silicon wafers in conjunction with industrial print technology has the potential to lower the cost per watt of solar cells. The use of n-type silicon is expected to allow the use of cheaper Cz substrates, without a corresponding loss in device efficiency. Printed metallisation is well utilised by the PV industry due to its low cost, yet there are few examples of its application to n-type solar cells. This thesis

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9

Lam, Chi-hung, and 林志雄. "Defect study of N-type 6H silicon carbide using positron lifetime spectroscopy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29753260.

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Lam, Chi-hung. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36299996.

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11

Ho, King-fung, and 何競豐. "Some positron annihilation studies on highly doped and supersaturated N-type silicon." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B30287108.

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12

Ning, Steven. "Simulation and process development for ion-implanted N-type silicon solar cells." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47684.

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As the efficiency potential for the industrial P-type Al-BSF silicon solar cell reaches its limit, new solar cell technologies are required to continue the pursuit of higher efficiency solar power at lower cost. It has been demonstrated in literature that among possible alternative solar cell structures, cells featuring a local BSF (LBSF) have demonstrated some of the highest efficiencies seen to date. Implementation of this technology in industry, however, has been limited due to the cost involved in implementing the photolithography procedures required. Recent advances in solar cell doping t

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13

Ryu, Kyung Sun. "Development of low-cost and high-efficiency commercial size n-type silicon solar cells." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53842.

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The objective of the research in this thesis was to develop high-efficiency n-type silicon solar cells at low-cost to reach grid parity. This was accomplished by reducing the electrical and optical losses in solar cells through understanding of fundamental physics and loss mechanisms, development of process technologies, cell design, and modeling. All these technology enhancements provided a 3.44% absolute increase in efficiency over the 17.4% efficient n-type PERT solar cell. Finally, 20.84% efficient n-type PERT (passivated emitter and rear totally diffused) solar cells were achieved on comm

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14

Lam, Chi-hung, and 林志雄. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B36299996.

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15

Frey, Alexander [Verfasser]. "Industrial n-Type Silicon Solar Cells with Co-Diffused Boron Emitters / Alexander Frey." Konstanz : Bibliothek der Universität Konstanz, 2018. http://d-nb.info/1161342966/34.

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16

Favre, Wilfried. "Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations." Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00635222.

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Les cellules à hétérojonctions de silicium fabriquées par croissance de couches minces de silicium amorphe hydrogéné (a-Si :H) à basse température sur des substrats de silicium cristallin (c-Si) peuvent atteindre des rendements de conversion photovoltaïque élevés (η=23 % démontré). Les efforts de recherche ayant principalement été orientés vers le cristallin de type p jusqu'à présent en France, ce travail s'attache à l'étude du type n pour d'une part déterminer les performances auxquelles s'attendre avec cette nouvelle filière et d'autre part les améliorer. Pour cela, nous avons mis en œuvre d

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17

Kramer, Illan. "Fabrication and characterization of a hybrid heterojunction composed of N-type silicon and PEDOT:PSS." Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=99774.

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A hybrid organic/inorganic heterojunction has been fabricated using an n-type silicon wafer (< 111 >, 3 < ρ < 6 Ω · cm) and a p-type polymer, PEDOT:PSS (ρ = 1 Ω · cm). Standard fabrication techniques such as vacuum deposition and spin coating are required for fabrication and have been employed. I-V characteristics have been measured under both dark and illuminated conditions for different thicknesses of PEDOT:PSS as defined by the spin rate at which the polymer has been spin coated. The data has been analyzed and figures of merit such as series resistance, short circuit current, open circuit v

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18

Heinz, Friedemann D., Matthias Breitwieser, Paul Gundel, et al. "Microscopic origin of the aluminium assisted spiking effects in n-type silicon solar cells." Elsevier, 2014. https://publish.fid-move.qucosa.de/id/qucosa%3A72455.

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Contact formation with silver (Ag) thick film pastes on boron emitters of n-type crystalline silicon (Si) solar cells is a nontrivial technological task. Low contact resistances are up to present only achieved with the addition of aluminium (Al) to the paste. During contact formation, Al assisted spiking from the paste into the silicon emitter and bulk occurs, thus leading to a low contact resistance but also to a deterioration of other cell parameters. Both effects are coupled and can be adjusted by choosing proper Al contents of the paste and temperatures for contact formation. In this work

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19

Chiguluri, Praneeth. "Quasi-steady-state Photoluminescence Lifetime Imaging of p- and n-type Multicrystalline Silicon Wafers." Ohio University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1300311806.

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Walker, Zane Harry. "Kinetics of the reaction of intrinsic and N-type silicon with atomic and molecular bromine and chlorine." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/32378.

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The etching of silicon by atomic and molecular chlorine and bromine was studied as a function of etchant pressure and reaction temperature. Various types of silicon were employed in the etching experiments including intrinsic and n-type polycrystalline silicon as well as the (100) face of intrinsic single crystal silicon. The pressures of Cl₂ and Br₂ varied from 0.1 to 30 Torr and the partial pressure of Cl and Br atoms was between 0.08 and 0.2 Torr. Temperatures of between 365 and 600°C were required for CI₂ and Br₂ etching, while lower temperatures of 25 to 470°C were sufficient for the more

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21

Lohmüller, Elmar [Verfasser]. "Transfer of the Metal Wrap Through Solar Cell Concept to n-Type Silicon / Elmar Lohmüller." Aachen : Shaker, 2016. http://d-nb.info/1081885750/34.

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22

Morishige, Ashley E. (Ashley Elizabeth). "Metal impurities in n-type crystalline silicon for photovoltaics : simulation, synchrotron-based characterization, and mitigation." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104131.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2016.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 193-211).<br>Crystalline silicon is the dominant technology in the rapidly-growing photovoltaics (PV) industry, but significant cost reduction is still required before widespread grid parity is achieved. One-quarter of the cost of a PV module is

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23

Oliver, Cyril. "Dopage au Bore du Silicium Multicristallin de type N : application à la fabrication de cellules photovoltaïques par un procédé industriel." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20199/document.

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Cette thèse présente le développement d'un équipement permettant le dopage Bore des cellules photovoltaïques à base de silicium de type n. Un four de diffusion, appartenant à la société Semco Engineering a été développé pour tirer profit du procédé LYDOP (Leaktight Yield Doping en anglais), breveté par la société. Ce dernier a permis la mise au point d'un procédé de diffusion du Bore, régulé sous basse pression, intégrant une source dopante gazeuse à base de BCl3 afin d'effectuer le dopage de plusieurs plaques de silicium simultanément. Les principaux paramètres influençant le procédé de dopag

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24

Schutz-Kuchly, Thomas. "Investigation du silicium de qualité solaire de type n pour la fabrication de cellules photovoltaïques." Phd thesis, Aix-Marseille Université, 2011. http://tel.archives-ouvertes.fr/tel-00809386.

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Ce travail étudie le potentiel du silicium de type n purifié par voie métallurgique pour la fabrication de cellules photovoltaïques à bas coût. Les teneurs élevées en dopants conduisent à de faibles valeurs de résistivité, ainsi qu'à une diminution de la durée de vie des porteurs de charge. La fabrication de cellules photovoltaïques a permis d'obtenir des rendements de conversion variant de 13.7% à 15.0% sur 148.6cm². Avec un procédé de fabrication amélioré, des rendements de 16.0% pourraient être obtenus. La résistivité des plaquettes a été identifiée comme facteur limitant les performances d

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Guo, Chuan. "Biosensitive Functionalised Silicon Surfaces: towards Biosensitive Field-Effect-Transistors." Thesis, The University of Sydney, 2013. http://hdl.handle.net/2123/9476.

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Electrical impedance spectroscopy (EIS) is a method that characterizes the electrical properties of a system of interest and provides a non destructive method for studying its structure and function. In this study, EIS was used to determine the electrical properties and physical structure of the formation of Self-assembled monolayers (SAMs) of biological materials on silicon surfaces. The electrical properties and physical structures of the interaction of human antibodies with carboxylic acid groups attached to highly and low doped n-type silicon (111) are presented. The specific binding test

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26

Bock, Robert [Verfasser]. "Screen-printed aluminium-doped p+ emitters for the application to n-type silicon solar cells / Robert Bock." Hannover : Technische Informationsbibliothek und Universitätsbibliothek Hannover (TIB), 2011. http://d-nb.info/1017379106/34.

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Kakanakova-Georgieva, Anelia, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen, and Erik Janzén. "The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN." Linköpings universitet, Halvledarmaterial, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91731.

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Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−x

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co

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30

Wehmeier, Nadine [Verfasser]. "Fabrication and analysis of co-diffused n-type silicon solar cells applying plasma-deposited diffusion sources / Nadine Wehmeier." Hannover : Technische Informationsbibliothek (TIB), 2017. http://d-nb.info/1136294945/34.

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Bonito, Oliva Valeria. "Diffusion de silicium et dopage de type n dans le AlN." Electronic Thesis or Diss., Université Côte d'Azur, 2024. https://intranet-theses.unice.fr/2024COAZ5009.

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Dans cette thèse, nous menons une étude approfondie de la diffusion du silicium (Si) dans le nitrure d'aluminium (AlN) massif et dans de l'AlN épitaxé sur substrat saphir.Nous introduisons le Si dans l'AlN à partir d'une couche de de Si1-xNx amorphe déposée par pulvérisation réactive. Notre étude concerne des recuits thermiques effectués à des températures comprises entre 1500 et 1700°C, avec des durées variant de 1 à 4 heures. En utilisant des techniques analytiques avancées telles que la spectrométrie de masse à ions secondaires (SIMS), la spectroscopie de rayons X à dispersion d'énergie (ED

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Letty, Elénore. "Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI094/document.

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Les cellules photovoltaïques à base de silicium cristallin représentent plus de 90% du marché photovoltaïque mondial. Des architectures de cellules à haut rendement de conversion sont actuellement développées. Pour atteindre leurs performances maximales, ces architectures nécessitent néanmoins une amélioration des propriétés électriques des substrats de silicium cristallin. Les objectifs de cette thèse sont d’identifier les défauts limitant les propriétés électriques de ces substrats, de comprendre les mécanismes menant à leur formation et de proposer des moyens permettant leur neutralisation.

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Machado, Taila Cristiane Policarpi Alves. "Implementa??o de emissores p+com diferentes dopantes para c?lulas solares n+np+ finas." Pontif?cia Universidade Cat?lica do Rio Grande do Sul, 2018. http://tede2.pucrs.br/tede2/handle/tede/8010.

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Submitted by PPG Engenharia e Tecnologia de Materiais (engenharia.pg.materiais@pucrs.br) on 2018-04-24T14:42:28Z No. of bitstreams: 1 Dissertacao Taila Final.pdf: 2384346 bytes, checksum: 8e3d52f21033cdc04d8f1c3449453ceb (MD5)<br>Approved for entry into archive by Sheila Dias (sheila.dias@pucrs.br) on 2018-05-08T19:50:29Z (GMT) No. of bitstreams: 1 Dissertacao Taila Final.pdf: 2384346 bytes, checksum: 8e3d52f21033cdc04d8f1c3449453ceb (MD5)<br>Made available in DSpace on 2018-05-08T20:07:12Z (GMT). No. of bitstreams: 1 Dissertacao Taila Final.pdf: 2384346 bytes, checksum: 8e3d52f21033cdc04

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Stockmeier, Ludwig [Verfasser], and Lothar [Gutachter] Frey. "Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method / Ludwig Stockmeier ; Gutachter: Lothar Frey." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2018. http://d-nb.info/1153608928/34.

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Mojrová, Barbora. "Solární články z monokrystalického křemíku typu n s vysokou účinností." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-408053.

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Tato dizertační práce je zaměřena vývoj a ověřování nových postupů přispívajících ke zvýšení účinnosti bifaciálních solárních článků založených na monokrystalickém křemíku n-typové vodivosti. Tato práce přináší nové poznatky o vylepšených výrobních procesech a postupech použitých během výroby článků v ISC Konstanz. V rámci práce byly vyrobeny solární články typu n-PERT (Passivated Emitter Rear Totally diffused) s vysokou účinností, a to pomocí standartních procesů a zařízení používaných běžně při průmyslové výrobě. Zapojení těchto průmyslových postupů a metod umožnilo ověřit možnosti výroby n-

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Śledziewski, Tomasz [Verfasser], Heiko B. [Akademischer Betreuer] Weber, and Martin [Gutachter] Hundhausen. "Electrical characterization of n-type 4H silicon carbide with improved material and interface properties using advanced doping techniques / Tomasz Śledziewski ; Gutachter: Martin Hundhausen ; Betreuer: Heiko B. Weber." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2018. http://d-nb.info/1170959156/34.

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Maslougkas, Sotirios. "Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-301848.

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Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. Except from its superiority to silicon, silicon carbide comes with a drawback of about two orders of magnitude more interface traps in the SiC/SiO2 interface compared with silicon. A result of this drawback is a flat-band voltage shift when applying a stres

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Printz, Martin [Verfasser], and T. [Akademischer Betreuer] Müller. "Entwicklung von strahlenharten N-in-P Silizium-Teilchendetektoren und Studien von Triggermodulen für den CMS Detektor am LHC = Development of radiation-hard n-in-p type silicon detectors and studies on modules with transverse momentum discrimination for the CMS detector at the LHC / Martin Printz. Betreuer: T. Müller." Karlsruhe : KIT-Bibliothek, 2016. http://d-nb.info/1088553583/34.

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Gabouze, Noureddine. "Etude photoelectrochimique de gaas(n) et si(n) en milieu non aqueux ch::(3)oh et ch::(3)cn : etude et realisation de cellules photoelectrochimiques minces." Paris 6, 1988. http://www.theses.fr/1988PA066242.

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L'etude electrochimique et photoelectrochimique des jonctions semiconducteur-electrolyte non aqueux (ch::(3)oh et ch::(3)cn) de gaas et si permet de mettre en evidence les proprietes de surface de ces materiaux. Realisations des cellules minces (pec), gaas(ch::(3)oh)sno::(2) montrent des rendements de conversion de l'ordre de 12 a 13%

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Grasa, Molina María Isabel. "EPR-induced charge transport in highly doped crystalline n-type silicone carbide." [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=961541768.

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Maldonado, Daniel. "Volumétrie d'adsorption de N-Hexane sur silices de type MCM-41 : Une étude thermodynamique de la condensation dans les mésopores." Montpellier 2, 2004. http://www.theses.fr/2004MON20150.

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Fekkar-Nemmiche, Nadia. "Caractérisations physicochimiques de silices mésoporeuses fonctionnalisées du type SBA-15 : étude thermodynamique et dynamique du confinement de l’eau, du 1-pentanol et du n-heptane dans ces silices." Montpellier 2, 2009. http://www.theses.fr/2009MON20077.

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Ce travail est consacré à l'étude des propriétés physico-chimiques de silices mésoporeuses fonctionnalisées du type SBA-15. Il a consisté à caractériser i) la structure mésoporeuse par DRX et par isothermes d'adsorption d'azote, ii) les états de surface de la silice par RMN lorsqu'on passe d'une fonction propyle à une chaîne -CH2-CH2-CH2-PO(OX)2 où X=Et, H, Li, Na et K, iii) les propriétés de confinement de trois adsorbats (eau, 1-pentanol et n-heptane) par analyses thermiques et iv) les propriétés de conduction ionique par spectroscopie d'impédance complexe. L'examen de la microstructure par

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Mauvy, Fabrice. "Étude des mécanismes de sélectivité dans les membranes ionosensibles de type NASICON." Grenoble INPG, 1997. http://www.theses.fr/1997INPG0186.

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Ce travail est consacre a l'etude du comportement des membranes nasicon au contact de solutions aqueuses. La stabilite dans l'eau des composes na#3zr#2si#2po#1#2 est examinee sur des poudres de differentes granulometries afin de caracteriser le regime de relargage des ions na#+. L'etude en fonction de la taille des grains montre que la cinetique est de type diffusionnel. Des experiences d'echange ionique sont realisees sur les composes nazr#2(po#4)#3, li#1#,#1al#0#,#1ti#1#,#9(po#4)#3 et na#3zr#2si#2po#1#2 au contact de solutions hcl, licl, nacl et kcl. Pour les cations na#+, li#+ et k#+, la ca

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Zheng, Peiting. "Material properties of n-type silicon and n-type UMG solar cells." Phd thesis, 2016. http://hdl.handle.net/1885/114515.

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This thesis focuses on understanding the electrical properties of n-type mono-crystalline silicon. Such material has been widely used for high efficiency solar cells and has the potential to be used for low-cost high-efficiency devices and ultra-high efficiency devices. However, the fundamental properties of n-type silicon, such as the mobility of electrons and holes as well as the influence of growth and feedstock related defects on the minority carrier lifetime remains unclear. This thesis clarifies these issues and brings new understanding regarding t

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Wen, Chung-Chi, and 溫宗錡. "Plasmon-Enhanced Auger Recombination in n-Type Silicon." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/04299615013818629263.

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碩士<br>國立交通大學<br>電子研究所<br>105<br>The effects of many-body plasmons on the Auger recombination in doped semiconductors were less studied over the past five decades. Recent first-principles calculations on n-type silicon, without participation of plasmons, yielded Auger lifetimes that are higher than experimental values. In this thesis, we make use of an existing microscopic Auger recombination formalism with which to reproduce first-principles results. Plasmons-enhanced potential fluctuations are not faster than the Auger event; therefore, the effect of plasmons can have only the indirect effect

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Tsai, Meng-Han, and 蔡孟翰. "Surface Passivation on N-type Silicon Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/41704707508113103834.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>100<br>Wafer based solar cell accounts for the production of a large part in photovoltaic industry due to its stability and high efficiency. Although the technology of wafer based solar cell has been well-developed for conventional structure, there are still numerous new challenges existing for the high efficiency solar cell. In this thesis, the fabrication process of n-type crystalline silicon solar cell is demonstrated by using ion implantation to form the boron (p+) emitter and phosphorous (n+) back surface field. By means of appropriate annealing, the implanted

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Phang, Sieu. "Gettering approaches for n-type multicrystalline silicon solar cells." Phd thesis, 2014. http://hdl.handle.net/1885/155810.

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The inherent resistance of n-type silicon towards metal contamination can potentially offset the higher metal content of multicrystalline silicon, allowing n-type multicrystalline silicon solar cells to reach high lifetime. Nevertheless, n-type multicrystalline silicon is still affected by metal contaminations and can be further improved by gettering. In terms of the high temperature steps involved, n-type cells require either an additional boron diffusion step or a longer aluminium annealing step to form the p+ emitter region. If not managed carefully, the additional high temperature steps ca

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Huang, Yu-Hung, and 黃昱閎. "N-type silicon based homojunction and heterojunction solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/83478367825654828285.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>99<br>Wafer based solar cell accounts for the production of a large part in photovoltaic industry due to its stability and high efficiency. Although the technology of wafer based solar cell has been well-developed for conventional structure, there are still numerous new challenges existing for high efficiency solar cell. In this thesis, the fabrication process of n-type silicon based homojunction solar cell is demonstrated by using ion implantation to form the boron (p+) emitter and phosphorous (n+) back surface field. By using appropriate annealing condition, The

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Lee, Chien-Ming, and 李健民. "The Study of Commercial N-type Crystalline Silicon Solar Cell." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/80877835031574667552.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>94<br>Abstract In this thesis, we use commercial in-line PECVD to deposit SiNx:H antireflection coating layer in low temperature (<300℃) and finish the commercial n-type solar cells by screen printing to achieve high efficiency、low cost and high throughput. The main discussion is the results of different process. Analyzing SiNx layer after different etching time. We use AFM to measure the roughness of surface, FTIR spectrum to analyze the bonding of elements and spectrometer to analyze optical characteristics. 　　Finally we use solar simulator to obtain ef

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SYU, JIA-IMN, and 許嘉珉. "Fabrication and characteristics of carbon nanotubes/n-type silicon heterojunction." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/56611710321222750864.

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碩士<br>南臺科技大學<br>光電工程系<br>105<br>Since the discovery of carbon nanotubes(CNTs), CNTs have attracted intensive interest on nanotechnology due their unique properties, such as high Young modulus, high conductivity, and high field emission efficiency at low turn-on voltage. Many potential applications use their unique properties, ex. silicon hetero-junction solar cells. Methods for the synthesis of CNTs include arc-discharge, laser vaporization, thermal chemical vapor deposition (CVD), plasma enhance chemical vapor deposition (PECVD) and electron cyclotron resonance CVD (ECR-CVD). In consideration

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