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1

Roshchupkina, Olga. "Ion beam induced structural modifications in nano-crystalline permalloy thin films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-114158.

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In the last years, there is a rise of interest in investigation and fabrication of nanometer sized magnetic structures due to their various applications (e.g. for data storage or micro sensors). Over the last several decades ion beam implantation became an important tool for the modification of materials and in particular for the manipulation of magnetic properties. Nanopatterning and implantation can be done simultaneously using focused-ion beam (FIB) techniques. FIB implantation and standard ion implantation differ in their beam current densities by 7 orders of magnitude. This difference can
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Akyildiz, Hasan. "Hydrogen Storage In Magnesium Based Thin Film." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612652/index.pdf.

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ABSTRACT HYDROGEN STORAGE IN MAGNESIUM BASED THIN FILMS Akyildiz, Hasan Ph.D., Department of Metallurgical and Materials Engineering Supervisor : Prof. Dr. Tayfur &Ouml<br>zt&uuml<br>rk Co-Supervisor : Prof. Dr. Macit &Ouml<br>zenbas October 2010, 146 pages A study was carried out for the production of Mg-based thin films which can absorb and desorb hydrogen near ambient conditions, with fast kinetics. For this purpose, two deposition units were constructed<br>one high vacuum (HV) and the other ultra high vacuum (UHV) deposition system. The HV system was based on a pyrex bell jar
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Lee, Jim 1963. "Microstructure and properties of zinc oxide nano-crystalline thin films and composites." Thesis, University of Auckland, 2006. http://hdl.handle.net/2292/2136.

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Zinc oxide (ZnO) is a II–VI compound semiconductor with a wide direct band-gap of 3.3 eV and a hexagonal structure. ZnO is often used in the paint, paper, rubber, food and drug industries. It is also a promising material in nanotechnology applications, for example in nano-electronics and nano-robotic technology. With its wide band-gap, high exciton binding energy and high breakdown strength, ZnO can be utilized for electronic and photonic devices, as well as for high-frequency applications. To produce such optoelectronic devices, control of electronic properties, such as the nature of conducti
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Abdolvand, Reza. "Thin-film piezoelectric-on-substrate resonators and narrowband filters." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/28113.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Committee Chair: Farrokh Ayazi; Committee Member: James D. Meindl; Committee Member: John D. Cressler; Committee Member: Nazanin Bassiri-Gharb; Committee Member: Oliver Brand.
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Roshchupkina, Olga [Verfasser], Jürgen [Akademischer Betreuer] Fassbender, and V. [Akademischer Betreuer] Holy. "Ion beam induced structural modifications in nano-crystalline permalloy thin films / Olga Roshchupkina. Gutachter: Jürgen Fassbender ; V. Holy. Betreuer: Jürgen Fassbender." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://d-nb.info/1068152656/34.

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Rosenits, Philipp [Verfasser]. "Electrical characterisation of crystalline silicon thin-film material / Philipp Rosenits." München : Verlag Dr. Hut, 2011. http://d-nb.info/1013526406/34.

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Kieliba, Thomas. "Zone-melting recrystallization for crystalline silicon thin-film solar cells." Berlin dissertation.de, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?id=2898611&prov=M&dok_var=1&dok_ext=htm.

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8

Ernst, Marco [Verfasser]. "Macroporous silicon for crystalline thin-film solar cells / Marco Ernst." Hannover : Technische Informationsbibliothek und Universitätsbibliothek Hannover (TIB), 2013. http://d-nb.info/1047351552/34.

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Bhowmick, Mithun. "Investigation of Optoelectronic Properties in Thin-Film and Crystalline Cadmium Sulfide." Bowling Green State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1182809377.

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10

Wang, Licai. "Crystalline silicon thin film growth by ECR plasma CVD for solar cells." Thesis, London South Bank University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.297927.

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Subramanian, Krishnan. "Development of next generation high voltage poly crystalline silicon thin film transistors." Thesis, De Montfort University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.414914.

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Schmich, Evelyn Karin. "High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells." München Verl. Dr. Hut, 2008. http://d-nb.info/992162874/04.

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13

Min, Byoung Koun. "Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/2737.

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This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling microscopy (STM). The most important constituent of this model catalyst system is the SiO2 thin film, as it must be thin and homogeneous enough to apply electron or ion based surface science techniques as well as STM. Ultra-thin SiO2 films were successfully synthesized on a Mo(112) single crystal. The electronic and geometric structure of the SiO2 thin fil
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Kouprine, Androus. "Thin film coating of nano-particles in a capacitively coupled RF discharge." Thèse, Université de Sherbrooke, 2003. http://savoirs.usherbrooke.ca/handle/11143/1753.

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Presently, nanocomposite materials have numerous applications, especially in the fields of materials for electronics, aerospace industry, biotechnologies and medicine. Utilization of plasma technologies can offer new production methods of such materials, in particular, the use of non-thermal plasmas for the treatment of hydrocarbons, which makes it possible to obtain a wide variety of thin films with a range of different characteristics. The goal of the presented thesis is an application of the non-thermal plasma for the fabrication of nano-structured materials on the basis of ceramic nanopowd
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15

Kieliba, Thomas [Verfasser]. "Zone-melting recrystallization for crystalline silicon thin-film solar cells / vorgelegt von Thomas Kieliba." Berlin : dissertation.de, 2006. http://d-nb.info/994900880/34.

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Pavlović, Regina Erika [Verfasser]. "Process Development for Crystalline Silicon Thin-Film Modules with Integrated Interconnection / Regina Erika Pavlović." Konstanz : Bibliothek der Universität Konstanz, 2016. http://d-nb.info/1114894052/34.

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Chen, Yi. "Organic thin film transistors with mono-crystalline rubrene films by horizontal hot wall deposition." Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=66699.

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As promising candidates for future low-cost and flexible display applications, organic thin film transistors (OTFTs) have attracted considerable research interests for the past two decades. Recent advances in organic semiconductor theory and organic film growth/deposition techniques have resulted in OTFTs based on single crystalline organic films with performance approaching or even exceeding the present day's dominant amorphous silicon TFT technology. In this work, efforts have been made to explore suitable methods for the fabrication of thin film transistors based on high m
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Izzard, Martin John. "The poly-crystalline silicon thin-film transistor as a circuit device in display applications." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358657.

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Kuzovkov, Vladimir, Eugene Kotomin, and Guntars Zvejnieks. "Modelling of diffusion-controlled pattern formation in thin metallic film growth on crystalline substrates." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-195410.

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Kirkpatrick, Timothy. "Geometric photovoltaics applied to amorphous silicon thin film solar cells." Thesis, Boston College, 2012. http://hdl.handle.net/2345/2892.

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Thesis advisor: Michael J. Naughton<br>Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are
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21

Sun, Tianyi. "Nano-optics of Perforated Metallic Films." Thesis, Boston College, 2014. http://hdl.handle.net/2345/bc-ir:103561.

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Thesis advisor: Krzysztof Kempa<br>Thesis advisor: Zhifeng Ren<br>In the past few decades, accompanied by the fascinating development of micro- and nano-fabrication techniques, the successful integration of subwavelength optics and multilayer structures has led to a number of remarkable discoveries. In this work, I present both experimental and theoretical investigations of the optics of thin metallic films with micro-/nano-scale perforations in the UV-VIS-IR ranges. Different fabrication techniques are employed, including nanosphere lithography, grain boundary lithography, crack templates, an
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22

Chen, Yan. "SINGLE CRYSTAL ENGINEERING OF AMORPHOUS-CRYSTALLINE BLOCK COPOLYMERS CRYSTALLIZATION, MORPHOLOGY AND APPLICATIONS." University of Akron / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=akron1133226076.

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Kuzovkov, Vladimir, Eugene Kotomin, and Guntars Zvejnieks. "Modelling of diffusion-controlled pattern formation in thin metallic film growth on crystalline substrates: Modelling of diffusion-controlled pattern formation in thinmetallic film growth on crystalline substrates." Diffusion fundamentals 2 (2005) 28, S. 1-2, 2005. https://ul.qucosa.de/id/qucosa%3A14358.

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FUMAGALLI, ENRICO MARIA. "Growth and physical properties of crystalline rubrene." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40093.

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Organic compounds showing semiconducting properties are now moving from being a pure research interest to their industrial application in the fabrication of a wide range of electronic devices. Among small molecule organic semiconductors, one of the most promising is rubrene (5,6,11,12-tetraphenyltetracene), which in the single crystal form reaches the highest charge carrier mobility values among organic semiconductors and also an extremely high photoconductivity and large exciton diffusion length. While rubrene single crystals with a size up to few centimeters can be prepared quite easily by
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25

Lai, Kuei-Fu, and 賴奎甫. "Formation of Nano Recording Marks on Crystalline Ge2Sb2Te5 Phase-change Nano Thin Film." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/27542533412051456223.

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碩士<br>國立臺灣大學<br>物理研究所<br>96<br>In this thesis, we study the formation of recording marks on crystalline Ge2Sb2Te5 phase-change nano thin film. We use an atomic force microscopy (AFM) and optical pump-probe system to investigate the topographic change and optical-thermal dependence of marks formation. From the experimental results, the process of recording mark formation is well studied in both incident power and pulse duration aspects. Through the complete experiments, the arbitrary pattern of recording marks can be written on phase-change material precisely by changing layered structure and t
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Lin, Tsung-ying, and 林宗穎. "Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/57707674210668756004.

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碩士<br>大同大學<br>光電工程研究所<br>97<br>Nano-crystalline silicon has been deposited on glass and plastic substrates by direct vacuum arc system at room to cryogenic temperature(77 K). Solid silicon wafer source were amount on both anode and cathode to be the electrodes which were highly doped single crystal silicon wafer(0.005 Ω/cm). It is suitable for deposited thin films on flexible substrate due to low deposition temperature. Silicon films were characterized by Raman spectroscopy、x-ray diffraction (XRD)、tunneling electron microscope (TEM) and scanning electron microscope (SEM). The result reveal
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Hsu, Chia-Hsun, and 許嘉巡. "Quantum confinement effect in embedded nano-crystalline silicon for high efficiency thin film solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/83709071938683138233.

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碩士<br>元智大學<br>先進能源研究所<br>99<br>In this study, the silicon nano-crystals were embedded into amorphous silicon thin films, leading to an increase in optical band gap due to the quantum confinement effect. A nc-Si:H film with the band gap of 1.95 eV was obtained by VHF (27.12 MHz) PECVD system and was used as a window layer for p-i-n a-Si:H thin film solar cells. The hetero-junction, p-layer nc-Si:H/i-layer a-Si:H, solar cell demonstrated an open-circuit voltage (Voc) of 0.88 V and a conversion efficiency of greater than 9%. This kind of cell structure has great potential for the development of t
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Ouyang, Yao-tsung, and 歐陽曜聰. "The Physic Properties and Applications of Metastable SiGe Nano Crystalline Thin Films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/73534165532767557411.

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博士<br>國立中央大學<br>化學工程與材料工程學系<br>103<br>Amorphous Si1-xGex films were prepared by co-sputtering on an oxidized Si wafer, followed by rapid thermal annealing, which formed nanocrystal films; since the Ge nanocrystals were not formed at thermodynamic equilibrium, an amorphous Si1-xGex matrix was finally obtained. Synchrotron radiation X-ray diffraction and Raman spectroscopy were utilized to identify the microstructure of the Si1-xGex films. High-resolution transmission electron microscopy was used to characterize the increase in size of the grains in the Ge nanocrystals with the Ge content. The
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Chen, Chih-Wei, and 陳志瑋. "The Structure and Properties of Nano-crystalline Zr(N,O) Thin Films on AISI 304 Stainless Steel: Effect of Film Thickness." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/03791308217916838209.

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碩士<br>國立清華大學<br>工程與系統科學系<br>95<br>The aim of this work was to investigate effects of film thickness on the single layered zirconium oxynitride (Zr(N,O)) films. These films were deposited on AISI 304 stainless steel substrates, at a constant temperature 450℃, by using hollow cathode discharge ion-plating system (HCD-IP) in an argon-oxygen-nitrogen atmosphere. The grain sizes of less than 15 nm show nanocrystalline structure of the films. Regarding to color variations, the intrinsic colorations of Zr(N,O) films were observed, the films are deposited at 0, 2, and 5 sccm O2 flow rate, and the extr
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Lee, Ruey Chyr, and 李瑞池. "Preparation of Nano-crystalline thin film and Powder of Barium Titanate and Zirconium Doped Barium Titanate Powder by Sol-gel." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/64769180942699808714.

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碩士<br>國立成功大學<br>材料科學(工程)學系<br>84<br>The sol-gel derived pure barium titanate and zirconium doped barium titanatepowder was prepared by using barium 2-methoxyethoxide precursors, titanium2-methoxyethoxide, and zirconium 2-methoxyethoxide, was examined. The stableclearbrown precursor solution was formed by mixing the 2-methoxyethoxide with2-methoxyethanol in an appropriate ratio. The barium titanate powder was at 130℃derived from a fully hydrolyzedprecursor solution. The zirconium ion co
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Cheng, Liang-chen, and 鄭良諶. "Research of nitrogen oxide sensing by sol-gel method to synthesis nano-crystalline tin oxide doping with tungsten thin film." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/03678651434743125186.

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碩士<br>義守大學<br>生物技術與化學工程研究所碩士班<br>94<br>NO is easy to combine with hemoglobin of blood and become nitro-hemoglobin. When exposed in high NO concentration environment for a long period of time, our central nerve will be inhibited, so the objective of this work is to invent nanocrystalline tin-tungsten oxide thin film to detect the NO concentration in atmosphere. Also, an increasing of NO concentration exhaled from human can be an indication of important symptom of pneumonia or asthma. Expensive, long detecting time and heavy sensors are no longer used in recent years. Instead of thick film a
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Shao-Hsien, Chiu. "Synthesis and Characterization of Nano-crystalline TiNxOy Thin Films by Unbalanced Magnetron Sputtering System (UBMS)." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709255751.

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Chiu, Shao-Hsien, and 邱紹賢. "Synthesis and Characterization of Nano-crystalline TiNxOy Thin Films by Unbalanced Magnetron Sputtering System (UBMS)." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/09283768800004527463.

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碩士<br>國立清華大學<br>工程與系統科學系<br>94<br>The functional colored hard coating has been developed to offer more advantages for decorations in recent years. A favored class of material is TiNxOy thin film which has substantial attentions by a variety of colorations and available mechanical properties. In this study, TiNxOy thin films were deposited by unbalanced magnetron sputtering with addition of oxygen and nitrogen at 350℃. The results show that the film coloration changes from warmer golden to vivid green and the hardness value is ranged from 20.8 to 11.6 GPa as the oxygen content was increased fro
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Lan, Kuan-Che, and 藍貫哲. "Study of Nano-crystalline Zr(N,O) Thin Films on Si Substrate by Ion-Plating." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/02005629931011688904.

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碩士<br>國立清華大學<br>工程與系統科學系<br>95<br>Zirconium nitride (ZrN) thin films have good corrosion and wear resistance in the aggressive environment for decorative coating. The narrow range of golden yellow color could limit the application of ZrN films in decorative coatings. By introducing the oxygen flow during coating, we can obtain zirconium oxynitride thin films which have good mechanical properties, chemical inertness, and have various colors from golden yellow to dark blue. Zr(N,O) films were deposited on P-type Si(100) wafer using hollow cathode discharged ion-plating (HCD-IP) by changing O2
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Gupta, Archana. "Electric field modified growth of spray pyrolysed nano-crystalline transparent conducting tin oxide thin films." Thesis, 2004. http://localhost:8080/iit/handle/2074/4231.

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Lin, Tin-Yi, and 林庭誼. "The electrochemical performance forward lithium of nano crystalline Sn thin films deposited by anode shielded sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/65064708054080914167.

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碩士<br>逢甲大學<br>材料科學所<br>93<br>Sn thin film anodes have been prepared using rf magnetron sputtering. With appropriate anode shielding during deposition, the film crystallity and surface morphology can be well controlled. The set-up of the anode shielding changed the plasma ion density, resulting in different ion flux available on the substrate as bias was provided. Grazing angle X-ray diffractometer and field emission scanning electron microscope were used to characterize the films crystallity and surface morphology. The electrochemical properties of the thin film anodes deposited under various
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Hsu, Shu-Wei, and 許書維. "Characteristics of the Nano-crystalline Si Quantum Dot Embedded ZnO Thin Films for Solar Cell Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/15045537983700589933.

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碩士<br>國立交通大學<br>光電工程學系<br>99<br>Researches of Si quantum dot (QD) thin film solar cell is fabricated by using nanocrystal silicon (nc-Si) QD embedded in the Si-based dielectric material. However the experimental results are still substantially lower than the theoretical value due to the unfavorable material characteristics of these Si-based matrices, that is, they are not electrically conductive. In this thesis, we propose to use Zinc oxide (ZnO) as the substitutable matrix material due to its many potential applications and unique features over other conventional wide band gap semiconductors
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Teng, Wen-Wen, and 鄧雯文. "Characteristics of Structure and Properties of Nano-crystalline ZrN thin films: Effects of Texture and Zr Interlayer." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/48538006431602299436.

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碩士<br>國立清華大學<br>工程與系統科學系<br>96<br>The purpose of this study is to investigate the effects of texture and the Zr interlayer on the structure and properties of nanocrystalline ZrN thin film. Nanocrystalline ZrN thin films were successfully deposited both on (100) p-type Si and AISI 304 stainless steel at a constant temperature 400℃ with introducing three different N2 flow rate, 1,3, and 4.2 sccm, to control the ZrN film textures as (111), random, and (200) by unbalanced magnetron sputtering system(UBMS). In addition, to understand the effects of Zr interlayer, Zr thin films with thickness of 130
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Samanta, Arup. "Nano-Crystalline Silicon and Quantum Dots in SiOx Matrix: Synthesis by RF Plasma CVD and Characterization for Device Applications." Thesis, 2019. http://hdl.handle.net/10821/8327.

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The aim of this thesis is to deal with one of the important technological issues related to silicon based technology and synthesis of silicon based nanostructures by a new approach feasible for device applications. Use of noble gases like, Ar, He, Xe, etc., are generally utilized to increase the deposition rate of silicon thin films in RF plasma CVD. However, high Ar dilution leads to columnar growth and produces mostly defective network, while Xe dilution maintains an amorphous nature of the network even at a very high RF power to the plasma. Using He as the diluent to the plasma, the recent
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Chuang, Wen-Ling, and 莊文齡. "Characteristics of the Nano-crystalline Si Quantum Dots Embedded in the Al-doped ZnO Thin Films and the p-type ZnO Thin Films for Solar Cell Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/17510476037466180417.

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碩士<br>國立交通大學<br>光電工程學系<br>99<br>In order to achieve high efficiency and low cost solar cells, all silicon-based tandem solar cells including the nano-crystalline silicon (nc-Si) quantum dots (QDs) are proposed. The nc-Si QD thin films stacking with different bandgaps can reduce the high energy photon loss, so the efficiency can be improved. In general, most groups will embed nc-Si QDs in the Si-based materials, such as SiO2, Si3N4, and SiC. Because of poor conductivity of these materials, the efficiency is still substantially lower than the theoretical value. In this study, we propose to embed
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Pippenger, Phillip McKinney. "Photoluminescence of crystalline thin film buckminsterfullerene." Thesis, 1995. http://hdl.handle.net/1911/13983.

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A method is described for the growth of high purity crystalline thin film C$\sb{60}$. Films grown by this method are analyzed by means of x-ray diffraction, low energy electron diffraction, and photoluminescence. An excimeric model of the processes leading to the observed photoluminescence spectrum is proposed. This model is supported by the locations of spectral features in the photoluminescence spectrum as well as by agreement with the cooling dependence, temperature dependence, and the lack of film thickness dependence of the photoluminescence spectrum. The model is used to explain the obse
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"Meta-Stability of Crystalline Thin-Film Photovoltaic Devices." Master's thesis, 2010. http://hdl.handle.net/2286/R.I.8721.

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abstract: Given the growing market in solar energy, specifically by the thin-film technologies, it is imperative that adequate and accurate standards be developed for these newer photovoltaic devices. Cadmium Telluride, CdTe, one of the major players in the thin-film PV industry is currently rated and certified using standards that have been developed under the context of older technologies. The behavior of CdTe has been shown to be unique enough to suggesting that standards be revised. In this research, methods built on previous industry and independent studies are used to identify these uniq
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Tu, Cheng-Hui, and 凃政暉. "Micro-crystalline silicon thin film transistors and memory devices." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/65667588506075349791.

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碩士<br>國立交通大學<br>光電工程學系<br>100<br>In this thesis, high crystallinity and low resistivity of intrinsic and n-type microcrystalline silicon (μc-Si:H) thin films were deposited at 265oC by inductively coupled plasma chemical vapor deposition system (ICPCVD). The high crystallinity of μc-Si:H and thin incubation layer of amorphous silicon (a-Si) were examined by the analysis of X-Ray diffraction (XRD) and transmission electron microscope (TEM), respectively. In addition, after systematically optimizing the parameters of dielectric, such as Ar flow, RF power, chamber pressure and the ratio of Si
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Chen, Shih-chieh, and 陳世杰. "High mobility micro-crystalline silicon thin film panel transistor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/73590633604680253248.

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碩士<br>國立交通大學<br>顯示科技研究所<br>99<br>The demands of flat panel displays have been increased in our modern which is full of information. The growing popularity of smartphones, cameras and notebooks proper the industry of flexible electronic devices rapidly. Flexible electronics possess several advantages, such as lightweight, flexibility, reliability and designed facility. Currently, a-Si:H TFTs have been widely used in AMLCD and are compatible with flexible substrate because of it’s low temperature process. However, low device mobility, higher driving voltage and electrical instability are the mai
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Hu, You-yuan, and 胡又元. "Crystallization of Multiple-Crystalline Block Copolymers in Thin Film." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/31997767527724380001.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>101<br>In this study, crystal growths of multiple-crystalline poly(ethylene oxide)-block-poly(ε-caprolactone)-block-poly(L-lactide) (PEO-PCL-PLLA) triblock copolymers in thin films are investigated by melt and solvent-induced crystallizations. Differential scanning calorimetry (DSC) and in-situ wide angle X-ray diffraction (WAXD) results indicate that the PEO, PCL, and PLLA blocks are able to sequentially crystallize in bulk state. The crystalline morphologies of the PEO-PCL-PLLA in thin films were explored using transmission electron microscopy (TEM) associated
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Jhang, Jia-Rong, and 張家榮. "Fabrication of Multiple Nano-Channel Thin Film Transistors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/61122038768743484029.

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碩士<br>國立暨南國際大學<br>電機工程學系<br>98<br>In this thesis, the multiple nano-channel thin film transistors were fabricated by combing the UV nano imprint technology and the traditional thin film transistor process. The HSQ nano mold, with the minimum line/spacing width of 200nm/100nm and the maximum height of 350nm, was fabricated by E-Beam lithography. The Poly-Si multiple nano-channels were fabricated by UV nanoimprint and reactive ion etching. Then the thin film transistors were fabricated by following the conventional TFT process. The electrical characterizations of multiple nano-channel TFTs were
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Yeh, Jen-Hao, and 葉仁豪. "Nano-texture Metal Thin Film for Sensors Applications." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/31039226050678273141.

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碩士<br>國立清華大學<br>動力機械工程學系<br>100<br>This study, we present nanoporous anodic aluminum template transformation technique to fabricate novel sensor. Using this technique to design, analysis and fabricate novel pizeoresistance sensors. They are temperature sensor, strain sensor and bending curvature sensor. Now the day, the technology of Micro- Electro- Mechanical System (MEMS) is primary using the semiconductor manufacture technology to manufacture micro system on silicon substrate. These days, with scale is going down to nano scale structure, the facilities of traditional manufacture in nano str
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Chen, Chien-Fu, and 陳建甫. "Carbon Embedded Nano-Crystalline Diamond Film and Its Field Emission Properties." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/17724384685705005960.

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碩士<br>國立清華大學<br>材料科學工程學系<br>100<br>Diamond film has attracted immense attention as a field emission material due to its negative electron affinity and robust mechanical and chemical properties. It has been widely investigated. Based on literatures, the critical factors of diamond film field emission are grain size, the structure of grain boundary, conductivity, graphite structure distribution, structural defect density, surface roughness, surface functional groups, etc. In this work, nano-graphite fiber embedded nano-crystalline diamond films were synthesized, and it’s excellent electron
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Wang, Bo-Wun, and 王博文. "Process Development of Poly-Crystalline Silicon Thin Film Solar Cells." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/29858636153529379038.

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碩士<br>國立雲林科技大學<br>光學電子工程研究所<br>95<br>The processing of the poly-crystalline silicon thin film solar cells with metal-induced crystallization(MIC)method has been investigated in this work. MIC process has the advantages of low-temperature, low-cost, simple, and capable for large-scale production. In this work, the aluminum and a-Si thin films of various thickness ratios were annealed below 600℃ to form the poly-Si film as the seed layer for the subsequent silicon film depositions. Besides, glass substrates were used to reduce the device cost. The FE-SEM, XRD, AES, SIMS and Raman spectrometry we
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Tang, Cheng-Chi, and 湯正吉. "The k・p Model of Topological-Crystalline-Insulator Thin Film." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/9gnr49.

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碩士<br>國立交通大學<br>電子物理系所<br>105<br>In the 21th century, scientists found a material called graphene, whose dispersion gap is zero at k = 0. Therefore, this non-metal material can conduct. In recent years, there is a revolutionary material called Topological Insulator. At first, this kind of material was found from quantum spin hall effect. i.e., it is found in 2D topological insulator and electrons can move in the edge. As we expand this concept to 3D, the electrons can only move in the surface, and we call it surface states. The zero gap points of topological insulator are protected by time-rev
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