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Artykuły w czasopismach na temat „Nanoelectronic”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 lipca 2025

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1

He, Qianxi. "Characteristics and Improvement Methods of Carbon Nanodevices." Highlights in Science, Engineering and Technology 106 (July 16, 2024): 94–100. http://dx.doi.org/10.54097/8s3ra054.

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Whether the trend of increasing integration density of integrated circuits indicated by Moore's Law can continue to develop, especially now that feature sizes have entered the nanometer range, shrinking sizes face greater challenges. Since entering the "post-Moore" era, the development of carbon-based nanoelectronics has attracted attention. This paper explores the application of carbon-based nanomaterials in carbon-based nanoelectronic devices and integrated circuits. It introduces the structure, properties, and preparation methods of single-walled carbon nanotubes and graphene, demonstrating

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2

Mishra, Manoj, and Shil Ja. "Germanium Nanowires (GeNW): Synthesis, Structural Properties, and Electrical Characterization for Advanced Nanoelectronic Devices." Migration Letters 20, S13 (2023): 236–45. http://dx.doi.org/10.59670/ml.v20is13.6289.

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The exponential progress of nanoelectronic devices necessitates the development of novel materials and production methodologies to fulfill the escalating demands for enhanced performance. This research aims to answer the current need for high-performance materials by proposing a revolutionary approach known as Germanium Nanowires for Advanced Nanoelectronic Devices (GeNW-ANED). GeNW-ANED achieves the integration of GeNW growth with advanced nanoelectronic applications. The system has several distinctive attributes, such as meticulous regulation of nanowire fabrication, adjustable electrical ch

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3

S, Anusankari, and Rajabrundha A. "MODELING, VERIFICATION AND TESTING TECHNIQUES IN NANOELECTRONICS INSTRUMENTATION FOR ENHANCED PRECISION AND RELIABILITY." ICTACT Journal on Microelectronics 10, no. 3 (2024): 1854–61. https://doi.org/10.21917/ijme.2024.0319.

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In the field of nanoelectronics, achieving high precision and reliability is critical for advancing technologies in diverse applications, such as sensors, biomedical devices, and quantum computing. Nanoelectronics instrumentation faces unique challenges due to the scaling of devices to nanometer dimensions, which results in increased susceptibility to noise, variability, and failure. Traditional verification and testing methods often fall short in ensuring the precision and reliability required at such scales. To address these challenges, advanced modeling, verification, and testing techniques

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4

HULL, ROBERT, RICHARD MARTEL, and J. M. XU. "NANOELECTRONICS: SOME CURRENT ASPECTS AND PROSPECTS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 353–64. http://dx.doi.org/10.1142/s0129156402001174.

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A brief summary is provided of selected current activities in the field of nanoelectronics, which is taken here to mean the fabrication and integration of active microelectronic components with feature dimensions of tens of nanometers or less. Particular emphasis is placed upon the classes of nanoelectronic devices that were discussed at the 2002 WOFE Conference.

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5

Snider, G., P. Kuekes, T. Hogg, and R. Stanley Williams. "Nanoelectronic architectures." Applied Physics A 80, no. 6 (2005): 1183–95. http://dx.doi.org/10.1007/s00339-004-3154-4.

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6

Csurgay, Árpád I., and Wolfgang Porod. "Nanoelectronic Circuits." International Journal of Circuit Theory and Applications 38, no. 9 (2010): 881–82. http://dx.doi.org/10.1002/cta.727.

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7

Melnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.

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The speed and specializations of large-scale integrated circuits always contradict their versatility, which expands their range and causes the rise in price of electronic devices. It is possible to eliminate the contradictions between universality and specialization by developing programmable nanoelectronic devices, the algorithms of which are changed at the request of computer hardware developers, i.e. by creating arithmetic circuits with programmable characteristics. The development of issues of theory and practice of the majority principle is now an urgent problem, since the nanoelectronic

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8

Sha, Junjiang, Chong Xu, and Ke Xu. "Progress of Research on the Application of Nanoelectronic Smelling in the Field of Food." Micromachines 13, no. 5 (2022): 789. http://dx.doi.org/10.3390/mi13050789.

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In the past 20 years, the development of an artificial olfactory system has made great progress and improvements. In recent years, as a new type of sensor, nanoelectronic smelling has been widely used in the food and drug industry because of its advantages of accurate sensitivity and good selectivity. This paper reviews the latest applications and progress of nanoelectronic smelling in animal-, plant-, and microbial-based foods. This includes an analysis of the status of nanoelectronic smelling in animal-based foods, an analysis of its harmful composition in plant-based foods, and an analysis

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9

Wang, Yanfeng, Haoping Ji, and Junwei Sun. "Design and Control for Four-Variable Chaotic Nanoelectronic Circuits Based on DNA Reaction Networks." Journal of Nanoelectronics and Optoelectronics 16, no. 8 (2021): 1248–62. http://dx.doi.org/10.1166/jno.2021.3062.

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Control of chaotic nanoelectronic circuit is a typical nonlinear problem. In this paper, we present a four-variable chaotic oscillatory nanoelectronic circuit by the cascade of multiplication, adjustment and elimination DNA chemical reaction modules. Furthermore, a proportional integral (PI) controller of four-variable nonlinear chaotic nanoelectronic circuit is realized based on catalysis and annihilation DNA chemical reaction modules. These DNA modules are realized by a series of DNA strand displacement (DSD) reactions and simulated by Visual DSD. Oscillatory time domain waveforms of four-va

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10

Sangwan, Vinod K., and Mark C. Hersam. "Neuromorphic nanoelectronic materials." Nature Nanotechnology 15, no. 7 (2020): 517–28. http://dx.doi.org/10.1038/s41565-020-0647-z.

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11

Liu, Ying, Zheng Jia, Yi Huang, Yu Gao, Lan Yang, and Dianbao Zhang. "Wearable Nanoelectronic Devices for Skin Wound Healing." Journal of Nanoelectronics and Optoelectronics 20, no. 1 (2025): 1–15. https://doi.org/10.1166/jno.2025.3709.

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Over the past few decades, the convergence of nanoelectronics and wearable technologies has driven paradigm-shifting advancements in cutaneous wound management. Skin-inspired engineering strategies utilizing functional nanomaterials with exceptional electromechanical properties have redefined the paradigm of therapeutic interventions in wearable biomedical systems. The flexible biosensors and nanomaterial-based electronics now enable multiplexed monitoring of dynamic wound biomarkers, including interstitial pH, temperature gradients, and moisture levels with real-time temporal precision. These

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12

Nithilam, D. N., and B. Paulchamy. "Design and Implementation of Nanoelectronics-Based Advanced Associative Memory Architecture for Autonomous Vehicles." Journal of Nanoelectronics and Optoelectronics 20, no. 1 (2025): 106–18. https://doi.org/10.1166/jno.2025.3707.

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The increasing demand for high-speed and energy-efficient memory solutions in autonomous vehicles has led to the development of advanced memory architectures. This paper presents the design and implementation of a Nanoelectronics-Based Advanced Associative Memory Architecture (NAAMA) as an alternative to Ternary Content Addressable Memory (TCAM) for real-time decision-making in autonomous vehicles. The proposed memory system enhances pattern matching efficiency while reducing power consumption and latency.The architecture leverages nanoelectronic devices, including memristors and FinFET-based

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13

Chen, Jierui, Xunguo Zhu, Kai Lu, Xihao Che, and Fu Su. "Multi-Layer Spatial Feature Fusion YOLOv8s: Enhanced Multi-Layer Spatial Feature Fusion for Underwater Optoelectronic Imaging Systems in Marine Nanoelectronics." Journal of Nanoelectronics and Optoelectronics 20, no. 2 (2025): 216–25. https://doi.org/10.1166/jno.2025.3720.

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Underwater optoelectronic imaging systems play a pivotal role in advancing marine nanoelectronics, enabling applications such as nanomaterial-based sensor deployment, underwater robotics, and environmental monitoring. However, challenges such as low contrast in optoelectronic data, multi-scale target variability, and weak detection of nanoscale or small biological entities hinder the performance of embedded vision systems. This paper proposes an improved Multi-Layer Spatial Feature Fusion YOLOv8s model (MLSFF-YOLOv8s) to address these limitations for marine nanoelectronic and optoelectronic ap

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14

Itoh, Kohei. "Isotopes for nanoelectronic devices." Nature Nanotechnology 4, no. 8 (2009): 480–81. http://dx.doi.org/10.1038/nnano.2009.214.

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15

Goldhaber-Gordon, D., M. S. Montemerlo, J. C. Love, G. J. Opiteck, and J. C. Ellenbogen. "Overview of nanoelectronic devices." Proceedings of the IEEE 85, no. 4 (1997): 521–40. http://dx.doi.org/10.1109/5.573739.

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16

Luscombe, J. H., and W. R. Frensley. "Models for nanoelectronic devices." Nanotechnology 1, no. 2 (1990): 131–40. http://dx.doi.org/10.1088/0957-4484/1/2/002.

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17

Beausoleil, R. G., P. J. Kuekes, G. S. Snider, Shih-Yuan Wang, and R. S. Williams. "Nanoelectronic and Nanophotonic Interconnect." Proceedings of the IEEE 96, no. 2 (2008): 230–47. http://dx.doi.org/10.1109/jproc.2007.911057.

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18

de Alencar Braga, Bianca Maria Matos, and Janaina Gonçalves Guimarães. "Nanoelectronic content-addressable memory." Microelectronics Journal 45, no. 8 (2014): 1118–24. http://dx.doi.org/10.1016/j.mejo.2014.05.022.

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19

Russer, Peter, and Johannes A. Russer. "Nanoelectronic RF Josephson Devices." IEEE Transactions on Microwave Theory and Techniques 59, no. 10 (2011): 2685–701. http://dx.doi.org/10.1109/tmtt.2011.2164549.

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20

Park, Chul Soon, Hyeonseok Yoon, and Oh Seok Kwon. "Graphene-based nanoelectronic biosensors." Journal of Industrial and Engineering Chemistry 38 (June 2016): 13–22. http://dx.doi.org/10.1016/j.jiec.2016.04.021.

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21

Star, A., T. R. Han, V. Joshi, J. C. P. Gabriel, and G. Grüner. "Nanoelectronic Carbon Dioxide Sensors." Advanced Materials 16, no. 22 (2004): 2049–52. http://dx.doi.org/10.1002/adma.200400322.

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22

Schrecongost, Dustin, Hai-Tian Zhang, Roman Engel-Herbert, and Cheng Cen. "Oxygen vacancy dynamics in monoclinic metallic VO₂ domain structures." Applied Physics Letters 120, no. 8 (2022): 081602. http://dx.doi.org/10.1063/5.0083771.

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It was demonstrated recently that the nano-optical and nanoelectronic properties of VO2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifet

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23

Homberger, Melanie, and Ulrich Simon. "On the application potential of gold nanoparticles in nanoelectronics and biomedicine." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 368, no. 1915 (2010): 1405–53. http://dx.doi.org/10.1098/rsta.2009.0275.

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Ligand-stabilized gold nanoparticles (AuNPs) are of high interest to research dedicated to future technologies such as nanoelectronics or biomedical applications. This research interest arises from the unique size-dependent properties such as surface plasmon resonance or Coulomb charging effects. It is shown here how the unique properties of individual AuNPs and AuNP assemblies can be used to create new functional materials for applications in a technical or biological environment. While the term technical environment focuses on the potential use of AuNPs as subunits in nanoelectronic devices,

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24

G, Suresh, Manikandan G, Bhuvaneswari G, and Vishnu Priyan S. "ADVANCEMENTS IN NANOELECTRONICS LEVERAGING TRANSFORMER ALGORITHMS FOR ENHANCED BIOMEDICAL DATA SCIENCE APPLICATIONS." ICTACT Journal on Microelectronics 10, no. 2 (2024): 1807–11. https://doi.org/10.21917/ijme.2024.0312.

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Nanoelectronics has revolutionized the field of biomedical data science by providing advanced tools for data acquisition and processing. Recent advancements in transformer algorithms have opened new avenues for enhancing the analysis of biomedical data, which is often complex and high-dimensional. Traditional methods struggle with the high volume and intricacy of biomedical data, leading to suboptimal performance in disease diagnosis, prognosis, and personalized treatment strategies. There is a need for more robust algorithms that can effectively handle and interpret this data. This study intr

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25

Garg, M., and K. Kern. "Attosecond coherent manipulation of electrons in tunneling microscopy." Science 367, no. 6476 (2019): 411–15. http://dx.doi.org/10.1126/science.aaz1098.

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Nanoelectronic devices operating in the quantum regime require coherent manipulation and control over electrons at atomic length and time scales. We demonstrate coherent control over electrons in a tunnel junction of a scanning tunneling microscope by means of precise tuning of the carrier-envelope phase of two-cycle long (<6-femtosecond) optical pulses. We explore photon and field-driven tunneling, two different regimes of interaction of optical pulses with the tunnel junction, and demonstrate a transition from one regime to the other. Our results show that it is possible to induce, track,

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26

Loganathan, P., and P. Kumar. "Nanoelectronic Multi-Layered Hybrid Systems for Ultra-High Efficiency in Communication and Processing Devices." Journal of Nanoelectronics and Optoelectronics 20, no. 4 (2025): 389–96. https://doi.org/10.1166/jno.2025.3744.

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The rapid advancement of communication and processing devices necessitates the development of ultraefficient, high-performance systems. This paper presents a novel approach by integrating Nanoelectronic Multi-Layered Hybrid Systems (NMLHS), which combine multiple cutting-edge nanoelectronic materials and devices to achieve unprecedented levels of efficiency in both power consumption and data processing. By leveraging graphene nanoribbons, quantum dots, and memristor-based storage within a multi-layered architecture, the proposed system enables significant reductions in energy consumption while

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27

Strukov, Dmitri B., and Konstantin K. Likharev. "Defect-Tolerant Architectures for Nanoelectronic Crossbar Memories." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 151–67. http://dx.doi.org/10.1166/jnn.2007.18012.

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We have calculated the maximum useful bit density that may be achieved by the synergy of bad bit exclusion and advanced (BCH) error correcting codes in prospective crossbar nanoelectronic memories, as a function of defective memory cell fraction. While our calculations are based on a particular ("CMOL") memory topology, with naturally segmented nanowires and an area-distributed nano/CMOS interface, for realistic parameters our results are also applicable to "global" crossbar memories with peripheral interfaces. The results indicate that the crossbar memories with a nano/CMOS pitch ratio close

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28

Millar, Campbell, Scott Roy, Andrew R. Brown, and Asen Asenov. "Simulating the bio–nanoelectronic interface." Journal of Physics: Condensed Matter 19, no. 21 (2007): 215205. http://dx.doi.org/10.1088/0953-8984/19/21/215205.

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Gromov, D. V., V. V. Elesin, G. V. Petrov, I. I. Bobrinetskii, and V. K. Nevolin. "Radiation effects in nanoelectronic elements." Semiconductors 44, no. 13 (2010): 1699–702. http://dx.doi.org/10.1134/s1063782610130166.

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Chen, An. "(Invited) Dielectrics in Nanoelectronic Computing." ECS Meeting Abstracts MA2020-01, no. 15 (2020): 1040. http://dx.doi.org/10.1149/ma2020-01151040mtgabs.

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Roychowdhury, V. P., D. B. Janes, and S. Bandyopadhyay. "Nanoelectronic architecture for Boolean logic." Proceedings of the IEEE 85, no. 4 (1997): 574–88. http://dx.doi.org/10.1109/5.573742.

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Ognev, A. V., E. V. Sukovatitsina, K. S. Diga, et al. "Granulated media for nanoelectronic applications." Journal of Physics: Conference Series 345 (February 9, 2012): 012010. http://dx.doi.org/10.1088/1742-6596/345/1/012010.

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Sacchetti, Andrea. "Electrical current in nanoelectronic devices." Physics Letters A 374, no. 39 (2010): 4057–60. http://dx.doi.org/10.1016/j.physleta.2010.08.001.

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Tkachenko, O. A., V. A. Tkachenko, Z. D. Kvon, A. V. Latyshev, and A. L. Aseev. "Introscopy of quantum nanoelectronic devices." Nanotechnologies in Russia 5, no. 9-10 (2010): 676–95. http://dx.doi.org/10.1134/s1995078010090132.

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35

Martorell, Ferran, and Antonio Rubio. "Cell architecture for nanoelectronic design." Microelectronics Journal 39, no. 8 (2008): 1041–50. http://dx.doi.org/10.1016/j.mejo.2007.10.008.

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Lin, Yung-Chen, Yu Chen, and Yu Huang. "Nanoelectronic Devices from Nanowire Heterostructures." ECS Transactions 33, no. 9 (2019): 3–11. http://dx.doi.org/10.1149/1.3493678.

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Randall, John, Gary Frazier, Alan Seabaugh, and Tom Broekaert. "Potential nanoelectronic integrated circuit technologies." Microelectronic Engineering 32, no. 1-4 (1996): 15–30. http://dx.doi.org/10.1016/0167-9317(96)00002-0.

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Gerousis, C., S. M. Goodnick, and W. Porod. "Toward nanoelectronic cellular neural networks." International Journal of Circuit Theory and Applications 28, no. 6 (2000): 523–35. http://dx.doi.org/10.1002/1097-007x(200011/12)28:6<523::aid-cta125>3.0.co;2-r.

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Türel, Özgür, Jung Hoon Lee, Xiaolong Ma, and Konstantin K. Likharev. "Neuromorphic architectures for nanoelectronic circuits." International Journal of Circuit Theory and Applications 32, no. 5 (2004): 277–302. http://dx.doi.org/10.1002/cta.282.

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Lee, Jung Hoon, and Konstantin K. Likharev. "Defect-tolerant nanoelectronic pattern classifiers." International Journal of Circuit Theory and Applications 35, no. 3 (2007): 239–64. http://dx.doi.org/10.1002/cta.410.

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Sharma, Pankaj, Peggy Schoenherr, and Jan Seidel. "Functional Ferroic Domain Walls for Nanoelectronics." Materials 12, no. 18 (2019): 2927. http://dx.doi.org/10.3390/ma12182927.

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A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.

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42

Zhang, Fang, Xianqi Dai, Liangliang Shang, and Wei Li. "Tunable Band Alignment in the Arsenene/WS2 Heterostructure by Applying Electric Field and Strain." Crystals 12, no. 10 (2022): 1390. http://dx.doi.org/10.3390/cryst12101390.

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Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS2 vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS2 heterostructure possesses a type-II band align

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Eom, Kitae, Muqing Yu, Jinsol Seo, et al. "Electronically reconfigurable complex oxide heterostructure freestanding membranes." Science Advances 7, no. 33 (2021): eabh1284. http://dx.doi.org/10.1126/sciadv.abh1284.

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In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. C

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Dmitriev, Victor, Fernando Gomes, and Clerisson Nascimento. "Nanoelectronic Devices Based on Carbon Nanotubes." Journal of Aerospace Technology and Management 7, no. 1 (2015): 53–62. http://dx.doi.org/10.5028/jatm.v7i1.358.

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Zhbanov, A. I., N. I. Sinitsyn, and G. V. Torgashov. "Nanoelectronic Devices Based on Carbon Nanotubes." Radiophysics and Quantum Electronics 47, no. 5/6 (2004): 435–52. http://dx.doi.org/10.1023/b:raqe.0000046318.53459.6e.

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Lee, Sang-Kwon, and Ahmad Umar. "A Special Section on Nanoelectronic Devices." Journal of Nanoelectronics and Optoelectronics 12, no. 10 (2017): 1105–7. http://dx.doi.org/10.1166/jno.2017.2249.

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Worschech, L., D. Hartmann, S. Reitzenstein, and A. Forchel. "Nonlinear properties of ballistic nanoelectronic devices." Journal of Physics: Condensed Matter 17, no. 29 (2005): R775—R802. http://dx.doi.org/10.1088/0953-8984/17/29/r01.

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Forshaw, M., R. Stadler, D. Crawley, and K. Nikoli. "A short review of nanoelectronic architectures." Nanotechnology 15, no. 4 (2004): S220—S223. http://dx.doi.org/10.1088/0957-4484/15/4/019.

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Strukov, Dmitri B., and Konstantin K. Likharev. "Prospects for terabit-scale nanoelectronic memories." Nanotechnology 16, no. 1 (2004): 137–48. http://dx.doi.org/10.1088/0957-4484/16/1/028.

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Likharev, Konstantin K. "CrossNets: Neuromorphic Hybrid CMOS/Nanoelectronic Networks." Science of Advanced Materials 3, no. 3 (2011): 322–31. http://dx.doi.org/10.1166/sam.2011.1177.

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