Zaloguj się

Gotowe bibliografie tematyczne / Optoelectronic devices

Spis treści

Artykuły w czasopismach
Rozprawy doktorskie
Książki
Części książek
Streszczenia konferencji
Raporty organizacyjne

Gotowa bibliografia na temat „Optoelectronic devices”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 29 lipca 2024

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Optoelectronic devices”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Artykuły w czasopismach na temat "Optoelectronic devices"

1

Miroshnichenko, Anna S., Vladimir Neplokh, Ivan S. Mukhin i Regina M. Islamova. "Silicone Materials for Flexible Optoelectronic Devices". Materials 15, nr 24 (7.12.2022): 8731. http://dx.doi.org/10.3390/ma15248731.

Pełny tekst źródła

Streszczenie:

Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs based on arrays of III–V nanowires (NWs). In this review, we analyze the currently existing types of silicone materials and their main properties, which are used in optoelectronic device development.

Style APA, Harvard, Vancouver, ISO itp.

2

Kausar, Ayesha, Ishaq Ahmad, Malik Maaza, M. H. Eisa i Patrizia Bocchetta. "Polymer/Fullerene Nanocomposite for Optoelectronics—Moving toward Green Technology". Journal of Composites Science 6, nr 12 (16.12.2022): 393. http://dx.doi.org/10.3390/jcs6120393.

Pełny tekst źródła

Streszczenie:

Optoelectronic devices have been developed using the polymer/fullerene nanocomposite, as focused in this review. The polymer/fullerene nanocomposite shows significant structural, electronics, optical, and useful physical properties in optoelectronics. Non-conducting and conducting polymeric nanocomposites have been applied in optoelectronics, such as light-emitting diodes, solar cells, and sensors. Inclusion of fullerene has further broadened the methodological application of the polymer/fullerene nanocomposite. The polymeric matrices and fullerene may have covalent or physical interactions for charge or electron transportation and superior optical features. Green systems have also been explored in optoelectronic devices; however, due to limited efforts, further design innovations are desirable in green optoelectronics. Nevertheless, the advantages and challenges of the green polymer/fullerene nanocomposite in optoelectronic devices yet need to be explored.

Style APA, Harvard, Vancouver, ISO itp.

3

Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan i Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction". Molecules 28, nr 3 (30.01.2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

Pełny tekst źródła

Streszczenie:

Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

Style APA, Harvard, Vancouver, ISO itp.

4

Alles, M. A., S. M. Kovalev i S. V. Sokolov. "Optoelectronic Defuzzification Devices". Физические основы приборостроения 1, nr 3 (15.09.2012): 83–91. http://dx.doi.org/10.25210/jfop-1203-083091.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

5

Bhattacharya, Pallab, i Lily Y. Pang. "Semiconductor Optoelectronic Devices". Physics Today 47, nr 12 (grudzień 1994): 64. http://dx.doi.org/10.1063/1.2808754.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

6

Osten, W. "Advanced Optoelectronic Devices". Optics & Laser Technology 31, nr 8 (listopad 1999): 613–14. http://dx.doi.org/10.1016/s0030-3992(00)00008-6.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

7

Jerrard, H. G. "Picosecond optoelectronic devices". Optics & Laser Technology 18, nr 2 (kwiecień 1986): 105. http://dx.doi.org/10.1016/0030-3992(86)90049-6.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

8

Chapman, David. "Optoelectronic semiconductor devices". Microelectronics Journal 25, nr 8 (listopad 1994): 769. http://dx.doi.org/10.1016/0026-2692(94)90143-0.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Djuris˘Ić, A. B., i W. K. Chan. "Organic Optoelectronic Devices". HKIE Transactions 11, nr 2 (styczeń 2004): 44–52. http://dx.doi.org/10.1080/1023697x.2004.10667955.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Vazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin i Kostantin Subkhankulov. "OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES". Electrical and data processing facilities and systems 18, nr 3-4 (2022): 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.

Pełny tekst źródła

Streszczenie:

Relevance Currently, optoelectronic devices based on diffraction gratings from standing elastic waves are widely used. This is due to the fact that such devices are small in size, allow realtime measurements and have high accuracy, speed and reliability. A review of foreign patents and scientific and technical literature shows that in Japan, the USA, Germany and other countries, intensive work has been carried out in recent years to create optoelectronic devices as part of information-measuring systems based on the use of diffraction gratings from standing elastic waves. Such work is also carried out in Russia. Today, optoelectronic devices are widely used in various fields of industry, medicine, ecology, etc. Aim of research It is necessary to investigate the prospects of research on the development of optoelectronic devices based on diffraction gratings from standing elastic waves. It is necessary to consider the physics of processes in the field of acousto-optic interactions. It is important to give the main characteristics and possible applications of optoelectronic devices based on diffraction gratings from standing elastic waves. Research objects Light and sound waves interacting with each other when they pass through the same medium, diffraction grating, optoelectronic device. Research methods Mathematical methods of calculation and analysis. Results The need for research in the field of optoelectronic devices based on diffraction gratings from standing elastic waves is formulated. It is shown that when passing through the same medium, light and sound waves interact with each other. Light is scattered on a sound wave, as on a diffraction grating. Recommendations for the design of optoelectronic devices based on diffraction gratings from standing elastic waves are proposed. Possible areas of application of optoelectronic devices based on diffraction gratings from standing elastic waves are considered. Keywords: acousto-optics, waves, modulator, diffraction grating, optoelectronic device

Style APA, Harvard, Vancouver, ISO itp.

Więcej źródeł

Rozprawy doktorskie na temat "Optoelectronic devices"

1

Thompson, Paul. "II-VI optoelectronic devices". Thesis, Heriot-Watt University, 1996. http://hdl.handle.net/10399/726.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

2

Vaughan, John. "Optoelectronic devices for spectrochemical sensing". Thesis, University of Manchester, 2005. https://www.research.manchester.ac.uk/portal/en/theses/optoelectronic-devices-for-spectrochemical-sensing(a6ea9f13-f235-4920-b63e-51e64a402327).html.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

3

Higgins, Steven Paul. "Computer simulation of optoelectronic devices". Thesis, University of Essex, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.413634.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

4

Shapira, Ofer Ph D. Massachusetts Institute of Technology. "Optical and optoelectronic fiber devices". Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/40511.

Pełny tekst źródła

Streszczenie:

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.
Includes bibliographical references (p. 111-119).
The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, demonstrated first in our work, are the surface-emitting fiber laser, the hollow-core fiber amplifier, the thermally self-monitored high-power transmission fiber device, and the photo-detecting fiber-web based imaging system. This work presents the design, analysis, and characterization of those devices. It opens with a study of the transmission properties of the multimode hollow-core, photonic bandgap fiber constructed of a periodic multilayer cladding. A defect is then introduced into one of the cladding layers and the interaction between core and defect modes is investigated. The second chapter addresses the experimental problem encountered in many multimode waveguide applications: how to extract, and to some extent to control, the modal content of the field at the output of a waveguide. We developed a non-interferometric approach to achieve mode decomposition based on a modified phase retrieval algorithm that can yield the complete vectorial eigenmode content of any general waveguiding structure and demonstrated its validity experimentally. In the third chapter an active material is introduced into the hollow-core to form a surface-emitting fiber laser. A unique azimuthally anisotropic optical wave front results from the interplay between the cylindrical resonator, the anisotropic gain medium, and the linearly polarized axial pump. We show that the direction and polarization of the wave front are directly controlled by the pump polarization.
(cont.) In the last two chapters, a new type of fiber is presented, constructed of semiconducting, insulating, and conducting materials, which enables the integration of semiconductor devices into the fiber structure. In the first we demonstrate a fiber comprised of an optical transmission element designed for the transport of high power radiation and multiple thermal-detecting elements encompassing the hollow core for distributed temperature monitoring and real-time failure detection. In the second, we demonstrate optical imaging using large-area, three-dimensional optical-detector arrays, built from one-dimensional photodetecting optoelectronic fibers. Lensless imaging of an object is achieved using a phase retrieval algorithm.
by Ofer Shapira.
Ph.D.

Style APA, Harvard, Vancouver, ISO itp.

5

Martins, Emiliano. "Light management in optoelectronic devices". Thesis, University of St Andrews, 2014. http://hdl.handle.net/10023/6133.

Pełny tekst źródła

Streszczenie:

This thesis presents studies on light management in optoelectronic devices. The broad aim of the thesis is to improve the efficiency of optoelectronic devices by optimised light usage. The studies emphasise the design and fabrication of nanostructures for optimised photon control. A key hypothesis guiding the research is that better designs can be achieved by ab initio identification of their desired Fourier properties. The specific devices studied are organic Distributed Feedback (DFB) lasers, organic solar cells and silicon solar cells. The impact of a substructured grating design capable of affording unprecedented control over the balance between feedback and output coupling in DFB organic lasers was investigated both experimentally and theoretically. It was found experimentally that such gratings can halve the threshold of organic DFB lasers. The reduction in the laser threshold is associated with reduced output coupling and higher feedback provided by the substructured gratings. The possibility of improving the efficiency of organic solar cells by trapping light into the absorbing medium was investigated. It was found that the low refractive index of the organic gain medium compromises the light trapping performance. It was found that strong absorption enhancement, however, can be achieved using plasmonic nanostructures. Finally, a novel design concept for light trapping in silicon solar cells is proposed. This design takes advantage of grating structures with long periods that are capable of providing broad-band light trapping, which is an important requirement for silicon solar cells. The design is based on a supercell that enables better light injection through manipulation of the grating's Fourier properties. The design idea leads to the formation of quasi-random nanostructures that afford great versatility for photon control. Strong light trapping was achieved and characterised both theoretically and experimentally.

Style APA, Harvard, Vancouver, ISO itp.

6

Li, Guangru. "Nanostructured materials for optoelectronic devices". Thesis, University of Cambridge, 2016. https://www.repository.cam.ac.uk/handle/1810/263671.

Pełny tekst źródła

Streszczenie:

This thesis is about new ways to experimentally realise materials with desired nano-structures for solution-processable optoelectronic devices such as solar cells and light-emitting diodes (LEDs), and examine structure-performance relationships in these devices. Short exciton diffusion length limits the efficiency of most exciton-based solar cells. By introducing nano-structured architectures to solar cells, excitons can be separated more effectively, leading to an enhancement of the cell’s power conversion efficiency. We use diblock copolymer lithography combined with solvent-vapour-assisted imprinting to fabricate nano-structures with 20-80 nm feature sizes. We demonstrate nanostructured solar cell incorporating the high-performance polymer PBDTTT-CT. Furthermore, we demonstrated the patterning of singlet fission materials, including a TIPS-pentacene solar cell based on ZnO nanopillars. Recently perovskites have emerged as a promising semiconductor for optoelectronic applications. We demonstrate a perovskite light-emitting diode that employs perovskite nanoparticles embedded in a dielectric polymer matrix as the emissive layer. The emissive layer is spin-coated from perovskite precursor/polymer blend solution. The resultant polymer-perovskite composites effectively block shunt pathways within the LED, thus leading to an external quantum efficiency of 1.2%, one order of magnitude higher than previous reports. We demonstrate formations of stably emissive perovskite nanoparticles in an alumina nanoparticle matrix. These nanoparticles have much higher photoluminescence quantum efficiency (25%) than bulk perovskite and the emission is found to be stable over several months. Finally, we demonstrate a new vapour-phase crosslinking method to construct full-colour perovskite nanocrystal LEDs. With detailed structural and compositional analysis we are able to pinpoint the aluminium-based crosslinker that resides between the nanocrystals, which enables remarkably high EQE of 5.7% in CsPbI3 LEDs.

Style APA, Harvard, Vancouver, ISO itp.

7

Dibos, Alan. "Nanofabrication of Hybrid Optoelectronic Devices". Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17463975.

Pełny tekst źródła

Streszczenie:

The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.
Engineering and Applied Sciences - Applied Physics

Style APA, Harvard, Vancouver, ISO itp.

8

Tan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Kim, Yong Hyun. "Alternative Electrodes for Organic Optoelectronic Devices". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-113279.

Pełny tekst źródła

Streszczenie:

This work demonstrates an approach to develop low-cost, semi-transparent, long-term stable, and efficient organic photovoltaic (OPV) cells and organic light-emitting diodes (OLEDs) using various alternative electrodes such as conductive polymers, doped ZnO, and carbon nanotubes. Such electrodes are regarded as good candidates to replace the conventional indium tin oxide (ITO) electrode, which is expensive, brittle, and limiting the manufacturing of low-cost, flexible organic devices. First, we report long-term stable, efficient ITO-free OPV cells and transparent OLEDs based on poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes by using a solvent post-treatment or a structure optimization. In addition, a high performance internal light out-coupling system for white OLEDs based on PEDOT:PSS-coated metal oxide nanostructures is developed. Next, we demonstrate highly efficient ITO-free OPV cells and OLEDs with optimized ZnO electrodes doped with alternative non-metallic elements. The organic devices based on the optimized ZnO electrodes show significantly improved efficiencies compared to devices with standard ITO. Finally, we report semi-transparent OPV cells with free-standing carbon nanotube sheets as transparent top electrodes. The resulting OPV cells exhibit very low leakage currents with good long-term stability. In addition, the combination of various kinds of bottom and top electrodes for semi-transparent and ITO-free OPV cells is investigated. These results demonstrate that alternative electrodes-based OPV cells and OLEDs have a promising future for practical applications in efficient, low-cost, flexible and semi-transparent device manufacturing
Die vorliegende Arbeit demonstriert einen Ansatz zur Verwirklichung von kostengünstigen, semi-transparenten, langzeitstabilen und effizienten Organischen Photovoltaik Zellen (OPV) und Organischen Leuchtdioden (OLEDs) durch die Nutzung innovativer Elektrodensysteme. Dazu werden leitfähige Polymere, dotiertes ZnO und Kohlenstoff-Nanoröhrchen eingesetzt. Diese alternativen Elektrodensysteme sind vielversprechende Kandidaten, um das konventionell genutzte Indium-Zinn-Oxid (ITO), welches aufgrund seines hohen Preises und spröden Materialverhaltens einen stark begrenz Faktor bei der Herstellung von kostengünstigen, flexiblen, organischen Bauelementen darstellt, zu ersetzten. Zunächst werden langzeitstabile, effiziente, ITO-freie Solarzellen und transparente OLEDs auf der Basis von Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS) Elektroden beschrieben, welche mit Hilfe einer Lösungsmittel-Nachprozessierung und einer Optimierung der Bauelementstruktur hergestellt wurden. Zusätzlich wurde ein leistungsfähiges, internes Lichtauskopplungs-System für weiße OLEDs, basierend auf PEDOT:PSS-beschichteten Metalloxid-Nanostrukturen, entwickelt. Weiterhin werden hoch effiziente, ITO-freie OPV Zellen und OLEDs vorgestellt, bei denen mit verschiedenen nicht-metallischen Elementen dotierte ZnO Elektroden zur Anwendung kamen. Die optimierten ZnO Elektroden bieten im Vergleich zu unserem Laborstandard ITO eine signifikant verbesserte Effizienz. Abschließend werden semi-transparente OPV Zellen mit freistehenden Kohlenstoff-Nanoröhrchen als transparente Top-Elektrode vorgestellt. Die daraus resultierenden Zellen zeigen sehr niedrige Leckströme und eine zufriedenstellende Stabilität. In diesem Zusammenhang wurde auch verschiedene Kombinationen von Elektrodenmaterialen als Top- und Bottom-Elektrode für semi-transparente, ITO-freie OPV Zellen untersucht. Zusammengefasst bestätigen die Resultate, dass OPV und OLEDs basierend auf alternativen Elektroden vielversprechende Eigenschaften für die praktische Anwendung in der Herstellung von effizienten, kostengünstigen, flexiblen und semi-transparenten Bauelement besitzen

Style APA, Harvard, Vancouver, ISO itp.

10

Yiu, Wai-kin, i 姚偉健. "Plasmonic enhancement of organic optoelectronic devices". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/211120.

Pełny tekst źródła

Streszczenie:

Plasmonics can be applied in a wide range of optoelectronic devices and it is induced by the interaction between incident light and conduction electrons. Resonance is induced by matching the photon energy and the frequency of electrons, which can cause the surface charge distribution and strengthens the electromagnetic field. Generally, plasmonics can be classified into surface plasmon resonance (SPR) and localized surface plasmon resonance (LSPR). SPR is the propagating wave, which occurs at interface between the dielectric and metal. LSPR is the non-propagating wave, which is the interaction between the metal nanoparticles (NPs) and incident light when the NP size is smaller than the light wavelength. In this thesis, plasmonic enhancement is studied to improve the performance of organic solar cells (OSCs) and light emission of organic semiconductors. OSCs are low cost, light weight, flexibility, and solution process ability at room temperature. Short exciton diffusion length limits the thickness of active layer, which causes low photon absorption and consequently low current generation. In this part, gold nanoparticles (Au NPs) are blended into OSCs to enhance photovoltaic performance. Au NPs can induce the localized surface plasmon resonance (LSPR) which enhances the light absorption due to electromagnetic field generation. Also, light can be trapped by scattering to increase the optical path and thus enhance the charge carrier generation. Film structure and 1D nanostructure of organic semiconductor are studied by their photoluminescence (PL) intensity. Generally, the PL intensity can be enhanced by SPR. Excitation energy can induce the surface plasmon (SP) instead of photon, which can amplify the spontaneous emission and stimulated emission. Compared to thin films, 1D organic structures achieve higher PL enhancement because they can trap the light more efficiently by Fabry-Pérot cavity. Different morphologies of organic semiconductor are synthesized and it is found that hexagonal plates can obtain better PL enhancement because of the Fabry-Pérot cavity mode.
published_or_final_version
Physics
Master
Master of Philosophy

Style APA, Harvard, Vancouver, ISO itp.

Więcej źródeł

Książki na temat "Optoelectronic devices"

1

Dragoman, Daniela. Advanced optoelectronic devices. Berlin: Springer, 1999.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

2

Mooney, William J. Optoelectronic devices and principles. Englewood Cliffs, N.J: Prentice Hall, 1991.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

3

Piprek, Joachim, red. Optoelectronic Devices. New York: Springer-Verlag, 2005. http://dx.doi.org/10.1007/b138826.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

4

Bhattacharya, Pallab. Semiconductor optoelectronic devices. Wyd. 2. Upper Saddle River, NJ: Prentice Hall, 1997.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

5

Dragoman, Daniela, i Mircea Dragoman. Advanced Optoelectronic Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03904-5.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

6

Bhattacharya, P. K. Semiconductor optoelectronic devices. Englewood Cliffs, N.J: Prentice Hall, 1993.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

7

Dragoman, Daniela. Advanced Optoelectronic Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

8

Bhattacharya, Pallab. Semiconductor optoelectronic devices. Englewood Cliffs, N.J: Prentice Hall, 1994.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Bhattacharya, Pallab Kumar. Semiconductor optoelectronic devices. London: Prentice-Hall International, 1994.

Znajdź pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Pradhan, Basudev, red. Perovskite Optoelectronic Devices. Cham: Springer International Publishing, 2024. http://dx.doi.org/10.1007/978-3-031-57663-8.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

Więcej źródeł

Części książek na temat "Optoelectronic devices"

1

Panish, Morton B., i Henryk Temkin. "Optoelectronic Devices". W Gas Source Molecular Beam Epitaxy, 322–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_10.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

2

Lunardi, Leda, Sudha Mokkapati i Chennupati Jagadish. "Optoelectronic Devices". W Guide to State-of-the-Art Electron Devices, 265–74. Chichester, UK: John Wiley & Sons, Ltd, 2013. http://dx.doi.org/10.1002/9781118517543.ch20.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

3

Evstigneev, Mykhaylo. "Optoelectronic Devices". W Introduction to Semiconductor Physics and Devices, 275–304. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_12.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

4

Gupta, K. M., i Nishu Gupta. "Optoelectronic Devices". W Advanced Semiconducting Materials and Devices, 311–50. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_9.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

5

Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson i Vigyan Vigs Chandra. "Optoelectronic Devices". W Electronic Devices and Circuit Fundamentals, Solution Manual, 76–86. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003403272-13.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

6

Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson i Vigyan (Vigs) Chandra. "Optoelectronic Devices". W Electronic Devices and Circuit Fundamentals, 511–80. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003393139-13.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

7

Nelson, A. W. "Key Optoelectronic Devices". W Electronic Materials, 67–89. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_7.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

8

Lozes-Dupuy, F., H. Martinot i S. Bonnefont. "Optoelectronic semiconductor devices". W Perspectives for Parallel Optical Interconnects, 149–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-49264-8_7.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Banerjee, Amal. "Semiconductor Optoelectronic Devices". W Synthesis Lectures on Engineering, Science, and Technology, 245–74. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-45750-0_14.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Dragoman, Daniela, i Mircea Dragoman. "Basic Concepts of Optoelectronic Devices". W Advanced Optoelectronic Devices, 1–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03904-5_1.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

Streszczenia konferencji na temat "Optoelectronic devices"

1

Ruden, P. P. "Materials-theory-based device modeling for III-nitride devices". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktorzy Gail J. Brown i Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344555.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

2

Jabbour, Ghassan E., Bernard Kippelen, Neal R. Armstrong i Nasser Peyghambarian. "Organic electroluminescent devices: aluminum alkali-halide composite cathode for enhanced device performance". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktor Bernard Kippelen. SPIE, 1999. http://dx.doi.org/10.1117/12.348413.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

3

"Optoelectronic devices". W 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994526.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

4

"Optoelectronic devices". W 2013 71st Annual Device Research Conference (DRC). IEEE, 2013. http://dx.doi.org/10.1109/drc.2013.6633854.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

5

Jain, Nikhil, Himanshu Singhvi, Siddharth Jain i Rishabh upadhyay. "Optoelectronic devices". W ICWET '10: International Conference and Workshop on Emerging Trends in Technology. New York, NY, USA: ACM, 2010. http://dx.doi.org/10.1145/1741906.1742213.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

6

McInerney, John G. "Bistable Optoelectronic Devices". W O-E/Fibers '87, redaktorzy Theodore E. Batchman, Richard F. Carson, Robert L. Galawa i Henry J. Wojtunik. SPIE, 1987. http://dx.doi.org/10.1117/12.967536.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

7

Kobayashi, Tetsuro, i Bong Young Lee. "Ultrafast Optoelectronic Devices". W 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.s-e-2.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

8

Tzolov, Velko P., Dazeng Feng, Stoyan Tanev i Z. Jan Jakubczyk. "Modeling tools for integrated and fiber optical devices". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktorzy Giancarlo C. Righini i S. Iraj Najafi. SPIE, 1999. http://dx.doi.org/10.1117/12.343726.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Laporta, Paolo, Stefano Longhi, Gino Sorbello, Stefano Taccheo i Cesare Svelto. "Erbium-ytterbium miniaturized laser devices for optical communications". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktorzy Shibin Jiang i Seppo Honkanen. SPIE, 1999. http://dx.doi.org/10.1117/12.344495.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Hood, Patrick J., John C. Mastrangelo i Shaw H. Chen. "New materials technology for latching electro-optic devices". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktorzy Julian P. G. Bristow i Suning Tang. SPIE, 1999. http://dx.doi.org/10.1117/12.344610.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

Raporty organizacyjne na temat "Optoelectronic devices"

1

Kolodzey, James. SiGeC Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, styczeń 2000. http://dx.doi.org/10.21236/ada377834.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

2

Kolodzey, James. SiGeC Alloys for Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, sierpień 1995. http://dx.doi.org/10.21236/ada295007.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

3

George, Nicholas. Optoelectronic Materials Devices Systems Research. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1998. http://dx.doi.org/10.21236/ada358443.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

4

LaBounty, Christopher, Ali Shakouri, Patrick Abraham i John E. Bowers. Integrated Cooling for Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, styczeń 2000. http://dx.doi.org/10.21236/ada459476.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

5

Miller, David A. Ultrafast Quantum Well Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, lipiec 2000. http://dx.doi.org/10.21236/ada384413.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

6

Peyghambarian, Nasser. (AASERT 95) Quantum Dot Devices and Optoelectronic Device Characterization. Fort Belvoir, VA: Defense Technical Information Center, maj 1998. http://dx.doi.org/10.21236/ada379743.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

7

Ding, Yujie J. Optoelectronic Devices Based on Novel Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 2006. http://dx.doi.org/10.21236/ada451063.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

8

Holub, M., D. Saha, D. Basu, P. Bhattacharya, L. Siddiqui i S. Datta. Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 2009. http://dx.doi.org/10.21236/ada498345.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Chaung, S. L. Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1996. http://dx.doi.org/10.21236/ada319314.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Li, Baohua. Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 2015. http://dx.doi.org/10.21236/ad1012928.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!