Gotowa bibliografia na temat „Optoelectronic devices”

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Optoelectronic devices”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Artykuły w czasopismach na temat "Optoelectronic devices"

1

Miroshnichenko, Anna S., Vladimir Neplokh, Ivan S. Mukhin, and Regina M. Islamova. "Silicone Materials for Flexible Optoelectronic Devices." Materials 15, no. 24 (2022): 8731. http://dx.doi.org/10.3390/ma15248731.

Pełny tekst źródła
Streszczenie:
Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs base
Style APA, Harvard, Vancouver, ISO itp.
2

Kausar, Ayesha, Ishaq Ahmad, Malik Maaza, M. H. Eisa, and Patrizia Bocchetta. "Polymer/Fullerene Nanocomposite for Optoelectronics—Moving toward Green Technology." Journal of Composites Science 6, no. 12 (2022): 393. http://dx.doi.org/10.3390/jcs6120393.

Pełny tekst źródła
Streszczenie:
Optoelectronic devices have been developed using the polymer/fullerene nanocomposite, as focused in this review. The polymer/fullerene nanocomposite shows significant structural, electronics, optical, and useful physical properties in optoelectronics. Non-conducting and conducting polymeric nanocomposites have been applied in optoelectronics, such as light-emitting diodes, solar cells, and sensors. Inclusion of fullerene has further broadened the methodological application of the polymer/fullerene nanocomposite. The polymeric matrices and fullerene may have covalent or physical interactions fo
Style APA, Harvard, Vancouver, ISO itp.
3

Matei, Andrei Teodor, Anita Ioana Visan, and Irina Negut. "Laser-Fabricated Micro/Nanostructures: Mechanisms, Fabrication Techniques, and Applications." Micromachines 16, no. 5 (2025): 573. https://doi.org/10.3390/mi16050573.

Pełny tekst źródła
Streszczenie:
The rapid evolution of optoelectronic devices necessitates innovative fabrication techniques to improve their performance and functionality. This review explores the advancements in laser processing as a versatile method for creating micro- and nanostructured surfaces, tailored to enhance the efficiency of optoelectronic applications. We begin by elucidating the fundamental mechanisms underlying laser interactions with materials, which facilitate the precise engineering of surface topographies. Following this, we systematically review various micro/nanostructures fabricated by laser techniques
Style APA, Harvard, Vancouver, ISO itp.
4

Sang, Xianhe, Yongfu Wang, Qinglin Wang, et al. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (2023): 1334. http://dx.doi.org/10.3390/molecules28031334.

Pełny tekst źródła
Streszczenie:
Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectroni
Style APA, Harvard, Vancouver, ISO itp.
5

Vazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin, and Kostantin Subkhankulov. "OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES." Electrical and data processing facilities and systems 18, no. 3-4 (2022): 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.

Pełny tekst źródła
Streszczenie:
Relevance Currently, optoelectronic devices based on diffraction gratings from standing elastic waves are widely used. This is due to the fact that such devices are small in size, allow realtime measurements and have high accuracy, speed and reliability. A review of foreign patents and scientific and technical literature shows that in Japan, the USA, Germany and other countries, intensive work has been carried out in recent years to create optoelectronic devices as part of information-measuring systems based on the use of diffraction gratings from standing elastic waves. Such work is also carr
Style APA, Harvard, Vancouver, ISO itp.
6

Alles, M. A., S. M. Kovalev, and S. V. Sokolov. "Optoelectronic Defuzzification Devices." Физические основы приборостроения 1, no. 3 (2012): 83–91. http://dx.doi.org/10.25210/jfop-1203-083091.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Bhattacharya, Pallab, and Lily Y. Pang. "Semiconductor Optoelectronic Devices." Physics Today 47, no. 12 (1994): 64. http://dx.doi.org/10.1063/1.2808754.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Osten, W. "Advanced Optoelectronic Devices." Optics & Laser Technology 31, no. 8 (1999): 613–14. http://dx.doi.org/10.1016/s0030-3992(00)00008-6.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Jerrard, H. G. "Picosecond optoelectronic devices." Optics & Laser Technology 18, no. 2 (1986): 105. http://dx.doi.org/10.1016/0030-3992(86)90049-6.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Chapman, David. "Optoelectronic semiconductor devices." Microelectronics Journal 25, no. 8 (1994): 769. http://dx.doi.org/10.1016/0026-2692(94)90143-0.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Rozprawy doktorskie na temat "Optoelectronic devices"

1

Thompson, Paul. "II-VI optoelectronic devices." Thesis, Heriot-Watt University, 1996. http://hdl.handle.net/10399/726.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Vaughan, John. "Optoelectronic devices for spectrochemical sensing." Thesis, University of Manchester, 2005. https://www.research.manchester.ac.uk/portal/en/theses/optoelectronic-devices-for-spectrochemical-sensing(a6ea9f13-f235-4920-b63e-51e64a402327).html.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Higgins, Steven Paul. "Computer simulation of optoelectronic devices." Thesis, University of Essex, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.413634.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Shapira, Ofer Ph D. Massachusetts Institute of Technology. "Optical and optoelectronic fiber devices." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/40511.

Pełny tekst źródła
Streszczenie:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.<br>Includes bibliographical references (p. 111-119).<br>The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, demonstrated first in our work, are the surface-emitting fiber laser, the hollow-core fiber amplifier, the thermally self-monitored high-power transmission fiber device, and the photo-detecting fiber-web ba
Style APA, Harvard, Vancouver, ISO itp.
5

Martins, Emiliano. "Light management in optoelectronic devices." Thesis, University of St Andrews, 2014. http://hdl.handle.net/10023/6133.

Pełny tekst źródła
Streszczenie:
This thesis presents studies on light management in optoelectronic devices. The broad aim of the thesis is to improve the efficiency of optoelectronic devices by optimised light usage. The studies emphasise the design and fabrication of nanostructures for optimised photon control. A key hypothesis guiding the research is that better designs can be achieved by ab initio identification of their desired Fourier properties. The specific devices studied are organic Distributed Feedback (DFB) lasers, organic solar cells and silicon solar cells. The impact of a substructured grating design capable of
Style APA, Harvard, Vancouver, ISO itp.
6

Li, Guangru. "Nanostructured materials for optoelectronic devices." Thesis, University of Cambridge, 2016. https://www.repository.cam.ac.uk/handle/1810/263671.

Pełny tekst źródła
Streszczenie:
This thesis is about new ways to experimentally realise materials with desired nano-structures for solution-processable optoelectronic devices such as solar cells and light-emitting diodes (LEDs), and examine structure-performance relationships in these devices. Short exciton diffusion length limits the efficiency of most exciton-based solar cells. By introducing nano-structured architectures to solar cells, excitons can be separated more effectively, leading to an enhancement of the cell’s power conversion efficiency. We use diblock copolymer lithography combined with solvent-vapour-assisted
Style APA, Harvard, Vancouver, ISO itp.
7

Dibos, Alan. "Nanofabrication of Hybrid Optoelectronic Devices." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17463975.

Pełny tekst źródła
Streszczenie:
The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can
Style APA, Harvard, Vancouver, ISO itp.
8

Tan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Kim, Yong Hyun. "Alternative Electrodes for Organic Optoelectronic Devices." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-113279.

Pełny tekst źródła
Streszczenie:
This work demonstrates an approach to develop low-cost, semi-transparent, long-term stable, and efficient organic photovoltaic (OPV) cells and organic light-emitting diodes (OLEDs) using various alternative electrodes such as conductive polymers, doped ZnO, and carbon nanotubes. Such electrodes are regarded as good candidates to replace the conventional indium tin oxide (ITO) electrode, which is expensive, brittle, and limiting the manufacturing of low-cost, flexible organic devices. First, we report long-term stable, efficient ITO-free OPV cells and transparent OLEDs based on poly(3,4-ethylen
Style APA, Harvard, Vancouver, ISO itp.
10

Yiu, Wai-kin, and 姚偉健. "Plasmonic enhancement of organic optoelectronic devices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/211120.

Pełny tekst źródła
Streszczenie:
Plasmonics can be applied in a wide range of optoelectronic devices and it is induced by the interaction between incident light and conduction electrons. Resonance is induced by matching the photon energy and the frequency of electrons, which can cause the surface charge distribution and strengthens the electromagnetic field. Generally, plasmonics can be classified into surface plasmon resonance (SPR) and localized surface plasmon resonance (LSPR). SPR is the propagating wave, which occurs at interface between the dielectric and metal. LSPR is the non-propagating wave, which is the interaction
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Książki na temat "Optoelectronic devices"

1

Dragoman, Daniela. Advanced optoelectronic devices. Springer, 1999.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Mooney, William J. Optoelectronic devices and principles. Prentice Hall, 1991.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Piprek, Joachim, ed. Optoelectronic Devices. Springer-Verlag, 2005. http://dx.doi.org/10.1007/b138826.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Bhattacharya, Pallab. Semiconductor optoelectronic devices. 2nd ed. Prentice Hall, 1997.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Dragoman, Daniela, and Mircea Dragoman. Advanced Optoelectronic Devices. Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03904-5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Bhattacharya, P. K. Semiconductor optoelectronic devices. Prentice Hall, 1993.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Dragoman, Daniela. Advanced Optoelectronic Devices. Springer Berlin Heidelberg, 1999.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Bhattacharya, Pallab. Semiconductor optoelectronic devices. Prentice Hall, 1994.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Bhattacharya, Pallab Kumar. Semiconductor optoelectronic devices. Prentice-Hall International, 1994.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Pradhan, Basudev, ed. Perovskite Optoelectronic Devices. Springer International Publishing, 2024. http://dx.doi.org/10.1007/978-3-031-57663-8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Części książek na temat "Optoelectronic devices"

1

Panish, Morton B., and Henryk Temkin. "Optoelectronic Devices." In Gas Source Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78127-8_10.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Lunardi, Leda, Sudha Mokkapati, and Chennupati Jagadish. "Optoelectronic Devices." In Guide to State-of-the-Art Electron Devices. John Wiley & Sons, Ltd, 2013. http://dx.doi.org/10.1002/9781118517543.ch20.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Evstigneev, Mykhaylo. "Optoelectronic Devices." In Introduction to Semiconductor Physics and Devices. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_12.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson, and Vigyan Vigs Chandra. "Optoelectronic Devices." In Electronic Devices and Circuit Fundamentals, Solution Manual. River Publishers, 2023. http://dx.doi.org/10.1201/9781003403272-13.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson, and Vigyan (Vigs) Chandra. "Optoelectronic Devices." In Electronic Devices and Circuit Fundamentals. River Publishers, 2023. http://dx.doi.org/10.1201/9781003393139-13.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Gupta, K. M., and Nishu Gupta. "Optoelectronic Devices." In Advanced Semiconducting Materials and Devices. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_9.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Nelson, A. W. "Key Optoelectronic Devices." In Electronic Materials. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_7.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Banerjee, Amal. "Semiconductor Optoelectronic Devices." In Synthesis Lectures on Engineering, Science, and Technology. Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-45750-0_14.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Lozes-Dupuy, F., H. Martinot, and S. Bonnefont. "Optoelectronic semiconductor devices." In Perspectives for Parallel Optical Interconnects. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-49264-8_7.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Dragoman, Daniela, and Mircea Dragoman. "Basic Concepts of Optoelectronic Devices." In Advanced Optoelectronic Devices. Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03904-5_1.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Streszczenia konferencji na temat "Optoelectronic devices"

1

Ruden, P. P. "Materials-theory-based device modeling for III-nitride devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344555.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Jabbour, Ghassan E., Bernard Kippelen, Neal R. Armstrong, and Nasser Peyghambarian. "Organic electroluminescent devices: aluminum alkali-halide composite cathode for enhanced device performance." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Bernard Kippelen. SPIE, 1999. http://dx.doi.org/10.1117/12.348413.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

"Optoelectronic devices." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994526.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

"Optoelectronic devices." In 2013 71st Annual Device Research Conference (DRC). IEEE, 2013. http://dx.doi.org/10.1109/drc.2013.6633854.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Jain, Nikhil, Himanshu Singhvi, Siddharth Jain, and Rishabh upadhyay. "Optoelectronic devices." In ICWET '10: International Conference and Workshop on Emerging Trends in Technology. ACM, 2010. http://dx.doi.org/10.1145/1741906.1742213.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

McInerney, John G. "Bistable Optoelectronic Devices." In O-E/Fibers '87, edited by Theodore E. Batchman, Richard F. Carson, Robert L. Galawa, and Henry J. Wojtunik. SPIE, 1987. http://dx.doi.org/10.1117/12.967536.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Kobayashi, Tetsuro, and Bong Young Lee. "Ultrafast Optoelectronic Devices." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.s-e-2.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Tzolov, Velko P., Dazeng Feng, Stoyan Tanev, and Z. Jan Jakubczyk. "Modeling tools for integrated and fiber optical devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Giancarlo C. Righini and S. Iraj Najafi. SPIE, 1999. http://dx.doi.org/10.1117/12.343726.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Laporta, Paolo, Stefano Longhi, Gino Sorbello, Stefano Taccheo, and Cesare Svelto. "Erbium-ytterbium miniaturized laser devices for optical communications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Shibin Jiang and Seppo Honkanen. SPIE, 1999. http://dx.doi.org/10.1117/12.344495.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Hood, Patrick J., John C. Mastrangelo, and Shaw H. Chen. "New materials technology for latching electro-optic devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Julian P. G. Bristow and Suning Tang. SPIE, 1999. http://dx.doi.org/10.1117/12.344610.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Raporty organizacyjne na temat "Optoelectronic devices"

1

Kolodzey, James. SiGeC Optoelectronic Devices. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada377834.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Kolodzey, James. SiGeC Alloys for Optoelectronic Devices. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada295007.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

George, Nicholas. Optoelectronic Materials Devices Systems Research. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada358443.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

LaBounty, Christopher, Ali Shakouri, Patrick Abraham, and John E. Bowers. Integrated Cooling for Optoelectronic Devices. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada459476.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Miller, David A. Ultrafast Quantum Well Optoelectronic Devices. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada384413.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Peyghambarian, Nasser. (AASERT 95) Quantum Dot Devices and Optoelectronic Device Characterization. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada379743.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Ding, Yujie J. Optoelectronic Devices Based on Novel Semiconductor Structures. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada451063.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Holub, M., D. Saha, D. Basu, P. Bhattacharya, L. Siddiqui, and S. Datta. Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits. Defense Technical Information Center, 2009. http://dx.doi.org/10.21236/ada498345.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Chaung, S. L. Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices. Defense Technical Information Center, 1996. http://dx.doi.org/10.21236/ada319314.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Li, Baohua. Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ad1012928.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!