Gotowe bibliografie tematyczne / Pe(ald)

Spis treści

  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Streszczenia konferencji
  4. Raporty organizacyjne

Gotowa bibliografia na temat „Pe(ald)”

Autor: Grafiati
Data publikacji: 12 października 2024
Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "Pe(ald)"

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Onaya, Takashi, and Koji Kita. "(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors." ECS Transactions 113, no. 2 (2024): 51–59. http://dx.doi.org/10.1149/11302.0051ecst.

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We fabricated 400°C-annealed TiN/HfxZr1−xO2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H2O and O2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. T
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Haeberle, Jörg, Karsten Henkel, Hassan Gargouri, et al. "Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films." Beilstein Journal of Nanotechnology 4 (November 8, 2013): 732–42. http://dx.doi.org/10.3762/bjnano.4.83.

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We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD p
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Van Daele, Michiel, Christophe Detavernier, and Jolien Dendooven. "Surface species during ALD of platinum observed with in situ reflection IR spectroscopy." Physical Chemistry Chemical Physics 20, no. 39 (2018): 25343–56. http://dx.doi.org/10.1039/c8cp03585g.

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Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe<sub>3</sub> as the precursor and O<sub>2</sub> gas or O<sub>2</sub> plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.
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Mione, M. A., V. Vandalon, W. M. M. Kessels, and F. Roozeboom. "Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 062407. http://dx.doi.org/10.1116/6.0002158.

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Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al2O3 using trimethylaluminum [TMA, Al(CH3)3] and Ar–O2 plasma within the temperature range of 80–200 °
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Do Nascimento, Cleonilde Maria, Alex José de Melo Silva, Jéssica Paula Lucena, et al. "Epidemiological profile of the main prevalent liver diseases in Brazil Northeast and possible impacts associated with the COVID-19 pandemic." Cuadernos de Educación y Desarrollo 15, no. 12 (2023): 16916–41. http://dx.doi.org/10.55905/cuadv15n12-096.

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Liver diseases especially hepatitis, alcoholic liver disease (ALD), and cancer are among the main causes of morbidity-mortality worldwide. Here, we analyzed data on hospital admissions, prevalence and mortality rates due to ALD, liver cancer, viral hepatitis and schistosomiasis in northeastern Brazil between 2000-2020, and investigate possible impacts caused by the COVID-19 pandemic in these data. In this period, Pernambuco (PE) and Bahia (BA) stood out for the growth in admissions for ALD: 707.2% and 177.3%, respectively; Paraiba (PB), Ceará (CE), and Alagoas (AL) showed the highest prevalenc
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Roy, Amit K., Jolien Dendooven, Davy Deduytsche, et al. "Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene." Chemical Communications 51, no. 17 (2015): 3556–58. http://dx.doi.org/10.1039/c4cc09474c.

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Gebhard, M., F. Mitschker, M. Wiesing, et al. "An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor." Journal of Materials Chemistry C 4, no. 5 (2016): 1057–65. http://dx.doi.org/10.1039/c5tc03385c.

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Karbalaei Akbari, Mohammad, Nasrin Siraj Lopa, and Serge Zhuiykov. "Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions." Coatings 13, no. 6 (2023): 1041. http://dx.doi.org/10.3390/coatings13061041.

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Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O3 is an ultra-wide bandgap metal oxide semiconductor for application in electronic devices. The polymorphous Ga2O3 with its unique electronic characteristics and doping capabilities is a functional option for heterointerface engineering at metal-semiconductor 2D heterojunctions for
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Dobbelaere, Thomas, Felix Mattelaer, Amit Kumar Roy, Philippe Vereecken, and Christophe Detavernier. "Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries." Journal of Materials Chemistry A 5, no. 1 (2017): 330–38. http://dx.doi.org/10.1039/c6ta04179e.

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Park, Yongju, Woonyoung Lee, Yongkook Choi, Hyunkyu Lee, and Jinseong Park. "Characteristics of Tin Oxide Thin Films Deposited by PE-ALD." Korean Journal of Materials Research 14, no. 12 (2004): 840–45. http://dx.doi.org/10.3740/mrsk.2004.14.12.840.

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Rozprawy doktorskie na temat "Pe(ald)"

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Innis, Neil Richard. "Synthesis and characterization of BxC films deposited via CVD and PE-ALD." Electronic Thesis or Diss., Lyon 1, 2024. http://www.theses.fr/2024LYO10241.

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Les couches minces de carbures de bores (BxC) trouvent diverses applications en tant qu'absorbeurs et détecteurs de neutrons, céramiques réfractaires, armures et protection balistique. Ces applications sont possibles grâce à leur forte absorption des neutrons, à leur grande stabilité chimique et thermique, ainsi qu’à leur grande dureté. En outre, ils présentent un intérêt potentiel pour les industries des semi-conducteurs et de l'optoélectronique en raison de leur conductivité de type p et de leur large bande interdite accordable. En effet, l'absorption nucléaire, les propriétés mécaniques, él
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Jaffal, Moustapha. "Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.

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Au cours des dernières décennies, l’industrie des semi-conducteurs a connu une augmentation spectaculaire de la performance des circuits intégrés. La photolithographie, un procédé indispensable à la fabrication des circuits intégrés, requiert désormais une séquence d'étapes de plus en plus complexes, comprenant de nombreux traitements successifs tels que le Self-Aligned Double Patterning (SADP) et le Self-Aligned Quadruple Patterning (SAQP). Au-delà de leur complexité et de l’augmentation des coûts associés, les étapes de patterning engendrent des erreurs d’alignement (Edge Placement Error (EP
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ZHANG, XIAO-YING, and 張小英. "Characteristic Analysis of HfO2 Thin Films Deposited by PE-ALD and its Application in Solar Cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x9kgj2.

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博士<br>大葉大學<br>電機工程學系<br>105<br>HfO2 thin films were grown by plasma enhanced atomic layer deposited (PE-ALD) and their deposition condition is optimized. Changing different pretreatment silicon substrates and annealing temperatures improved the passivation properties of HfO2 thin films on silicon. HfO2 thin films used in high-efficiency n-type Si solar cells were also investigated. The main works are summarized as follows: 1. The condition of HfO2 thin films deposited by PE-ALD was optimized. When the silicon substrate was pretreated by O2 plasma, the HfO2 thin films have the best passivation
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Streszczenia konferencji na temat "Pe(ald)"

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Dallaev, Rashid. "Characterization Of Aln Nanolayers Deposited On A Surface Of Hopg By Pe-Ald." In STUDENT EEICT 2021. Fakulta elektrotechniky a komunikacnich technologii VUT v Brne, 2021. http://dx.doi.org/10.13164/eeict.2021.193.

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Yan, Jingdong, Bosen Ma, Stephen Liou, Ce Qin, and Amit Jain. "Tunable Step Coverage of In-Situ Pe-Ald in ETCH Chamber for Sidewall Protection During 3D Nand High Aspect-Ratio Etch." In 2021 China Semiconductor Technology International Conference (CSTIC). IEEE, 2021. http://dx.doi.org/10.1109/cstic52283.2021.9461512.

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Zakirov, Evgeny R., Valeriy G. Kesler, and Georgiy Yu Sidorov. "Studying C–V Characteristics of MIS Structures with PE-ALD Al2O3 on HgCdTe Oxidized in Remote RF-Plasma." In 2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE). IEEE, 2023. http://dx.doi.org/10.1109/apeie59731.2023.10347577.

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Wu, Tian-Li, Denis Marcon, Brice De Jaeger, et al. "Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs." In 2015 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2015. http://dx.doi.org/10.1109/irps.2015.7112769.

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Raporty organizacyjne na temat "Pe(ald)"

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Alhasan, Ahmad, Brian Moon, Doug Steele, Hyung Lee, and Abu Sufian. Chip Seal Quality Assurance Using Percent Embedment. Illinois Center for Transportation, 2023. http://dx.doi.org/10.36501/0197-9191/23-029.

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This study investigates the use of macrotexture as an indicator of the percent embedment (PE) of aggregate in a chip seal and ultimately, as a quality assurance tool for chip seals. The study included an extensive field- and controlled-testing program from 24 chip seal sections constructed in Illinois. Surface texture measurements were acquired using a high-speed texture profiler and a stationary laser texture device. The analysis showed that stationary texture measurements were more consistent and reliable for estimating PE and characterizing chip seals in the field. Moreover, the ground trut
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